JP2005203763A5 - - Google Patents

Download PDF

Info

Publication number
JP2005203763A5
JP2005203763A5 JP2004363416A JP2004363416A JP2005203763A5 JP 2005203763 A5 JP2005203763 A5 JP 2005203763A5 JP 2004363416 A JP2004363416 A JP 2004363416A JP 2004363416 A JP2004363416 A JP 2004363416A JP 2005203763 A5 JP2005203763 A5 JP 2005203763A5
Authority
JP
Japan
Prior art keywords
wiring
thin film
film transistor
memory
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004363416A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005203763A (ja
JP4963160B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004363416A priority Critical patent/JP4963160B2/ja
Priority claimed from JP2004363416A external-priority patent/JP4963160B2/ja
Publication of JP2005203763A publication Critical patent/JP2005203763A/ja
Publication of JP2005203763A5 publication Critical patent/JP2005203763A5/ja
Application granted granted Critical
Publication of JP4963160B2 publication Critical patent/JP4963160B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2004363416A 2003-12-19 2004-12-15 半導体装置 Expired - Fee Related JP4963160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004363416A JP4963160B2 (ja) 2003-12-19 2004-12-15 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003423841 2003-12-19
JP2003423841 2003-12-19
JP2004363416A JP4963160B2 (ja) 2003-12-19 2004-12-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2005203763A JP2005203763A (ja) 2005-07-28
JP2005203763A5 true JP2005203763A5 (ko) 2007-12-06
JP4963160B2 JP4963160B2 (ja) 2012-06-27

Family

ID=34829375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004363416A Expired - Fee Related JP4963160B2 (ja) 2003-12-19 2004-12-15 半導体装置

Country Status (1)

Country Link
JP (1) JP4963160B2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4946438B2 (ja) * 2004-07-06 2012-06-06 コニカミノルタホールディングス株式会社 半導体装置、その製造方法及び電子装置
WO2006033451A1 (en) * 2004-09-24 2006-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4906076B2 (ja) * 2005-07-29 2012-03-28 株式会社半導体エネルギー研究所 半導体装置
JP5127176B2 (ja) * 2005-07-29 2013-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5063084B2 (ja) * 2005-11-09 2012-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20070126556A1 (en) * 2005-12-07 2007-06-07 Kovio, Inc. Printed radio frequency identification (RFID) tag using tags-talk-first (TTF) protocol
US20070138462A1 (en) * 2005-12-21 2007-06-21 Palo Alto Research Center Incorporated Electronic device with unique encoding
EP1993781A4 (en) 2006-02-03 2016-11-09 Semiconductor Energy Lab Co Ltd METHOD FOR MANUFACTURING MEMORY ELEMENT, LASER IRRADIATION APPARATUS, AND LASER IRRADIATION METHOD
JP5178022B2 (ja) * 2006-02-03 2013-04-10 株式会社半導体エネルギー研究所 記憶素子の作製方法
US8580700B2 (en) 2006-02-17 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7532378B2 (en) 2006-02-21 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device
US7541213B2 (en) 2006-07-21 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6496742B2 (ja) * 2014-02-11 2019-04-03 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 薄膜電子回路をカスタマイズするための方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244497A (ja) * 1987-03-31 1988-10-11 Texas Instr Japan Ltd 半導体装置
JP2679146B2 (ja) * 1988-09-05 1997-11-19 日本電気株式会社 半導体記憶装置およびその製造方法
JPH0481299U (ko) * 1990-11-27 1992-07-15
JPH06112436A (ja) * 1992-09-28 1994-04-22 Fujitsu Ltd 半導体装置及びその製造方法
JPH0773689A (ja) * 1993-09-03 1995-03-17 Nec Kyushu Ltd 半導体記憶回路
JPH1022481A (ja) * 1996-07-08 1998-01-23 Toshiba Corp 読み出し専用半導体記憶装置
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体

Similar Documents

Publication Publication Date Title
JP2005203763A5 (ko)
JP2008277798A5 (ko)
WO2007112361A3 (en) Structure and method of forming electrodeposited contacts
US7656045B2 (en) Cap layer for an aluminum copper bond pad
US20070035023A1 (en) Semiconductor device having improved mechanical and thermal reliability
TW560078B (en) A semiconductor device
TW490773B (en) Semiconductor device and its manufacture method
CN103123916B (zh) 半导体器件、电子器件以及半导体器件制造方法
US6614113B2 (en) Semiconductor device and method for producing the same
US20140327134A1 (en) Metal bump structure for use in driver ic and method for forming the same
JP2006310799A5 (ko)
US10236265B2 (en) Semiconductor chip and method for forming a chip pad
JP6068425B2 (ja) 電極構造
JP2004221570A5 (ko)
CN103137591A (zh) 电子器件及制造电子器件的方法
US20150366050A1 (en) Semiconductor package
JP4822155B2 (ja) サブマウント及びその製造方法
US20030052420A1 (en) Semiconductor device
JP2005136394A5 (ko)
TW200823580A (en) Wiring laminated film and wiring circuit
JP3262657B2 (ja) ボンディング方法及びボンディング構造
JP2008288562A5 (ko)
US8434941B2 (en) Temperature measuring sensor and method of producing same
JP2006324634A5 (ko)
US10388627B1 (en) Micro-bonding structure and method of forming the same