JP2005200281A - セラミック抵抗体及びその製造方法並びに静電チャック - Google Patents
セラミック抵抗体及びその製造方法並びに静電チャック Download PDFInfo
- Publication number
- JP2005200281A JP2005200281A JP2004009441A JP2004009441A JP2005200281A JP 2005200281 A JP2005200281 A JP 2005200281A JP 2004009441 A JP2004009441 A JP 2004009441A JP 2004009441 A JP2004009441 A JP 2004009441A JP 2005200281 A JP2005200281 A JP 2005200281A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- ceramic resistor
- electrostatic chuck
- dielectric layer
- ceo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 68
- 239000002245 particle Substances 0.000 claims abstract description 52
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000001179 sorption measurement Methods 0.000 claims description 45
- 238000010304 firing Methods 0.000 claims description 34
- 239000000843 powder Substances 0.000 claims description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 150000001639 boron compounds Chemical class 0.000 claims description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 35
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000012071 phase Substances 0.000 description 30
- 238000005452 bending Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000006378 damage Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000013001 point bending Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005382 thermal cycling Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- -1 B—O Chemical class 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Landscapes
- Ceramic Products (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】窒化アルミニウムを主成分とし、副成分として酸化セリウムを含有した焼結体であって、上記窒化アルミニウムの粒子の三重点に平均粒径が0.05μm〜5μmのCeO2又はCe2O3を備えたセラミック抵抗体を誘電体層とする静電チャックとする。
【選択図】図1
Description
2 :誘電体層
2a:吸着面
3 :基体
4 :静電吸着用電極
5 :給電端子
W :ウェハ
Claims (6)
- 窒化アルミニウムを主成分とし、副成分として酸化セリウムを含む窒化アルミニウム質焼結体からなり、上記窒化アルミニウムの粒子の三重点に平均粒径が0.05μm〜5μmのCeO2又はCe2O3を有し、前記窒化アルミニウム質焼結体のワイブル係数が7以上であることを特徴とするセラミック抵抗体。
- 上記窒化アルミニウムの粒子の三重点に非晶質相を有することを特徴とする請求項1記載のセラミック抵抗体。
- 上記窒化アルミニウムの粒子の三重点にホウ素化合物相を有することを特徴とする請求項1または2に記載のセラミック抵抗体。
- 上記窒化アルミニウムの粒子間にCeAlO3相を有することを特徴とする請求項1〜3の何れかに記載のセラミック抵抗体。
- 主成分である窒化アルミニウム粉末に対し、副成分としてのCeO2粉末と有機バインダーとを添加混合したセラミック原料を成形して成形体を作製し、前記成形体を脱脂した後、0.2〜4.8MPaの窒素ガス圧力下で焼成することを特徴とする請求項1〜4の何れかに記載のセラミック抵抗体の製造方法。
- 誘電体層の上面を被吸着物を載せる吸着面とするとともに、上記誘電体層の下面に静電吸着用電極を備えた静電チャックにおいて、上記誘電体層を、請求項1〜4の何れかのセラミック抵抗体により形成したことを特徴とする静電チャック。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004009441A JP4789416B2 (ja) | 2004-01-16 | 2004-01-16 | セラミック抵抗体及びその製造方法並びに静電チャック |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004009441A JP4789416B2 (ja) | 2004-01-16 | 2004-01-16 | セラミック抵抗体及びその製造方法並びに静電チャック |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005200281A true JP2005200281A (ja) | 2005-07-28 |
JP4789416B2 JP4789416B2 (ja) | 2011-10-12 |
Family
ID=34822482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004009441A Expired - Fee Related JP4789416B2 (ja) | 2004-01-16 | 2004-01-16 | セラミック抵抗体及びその製造方法並びに静電チャック |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4789416B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170013655A (ko) * | 2015-07-28 | 2017-02-07 | (주)샘씨엔에스 | 정전 척용 세라믹 조성물, 이를 이용한 정전 척 |
US10079167B2 (en) | 2014-11-20 | 2018-09-18 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chucking device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002284578A (ja) * | 2001-03-27 | 2002-10-03 | Ngk Insulators Ltd | 焼結体、抵抗体、半導体製造装置用部材、板状部材および積層体 |
-
2004
- 2004-01-16 JP JP2004009441A patent/JP4789416B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002284578A (ja) * | 2001-03-27 | 2002-10-03 | Ngk Insulators Ltd | 焼結体、抵抗体、半導体製造装置用部材、板状部材および積層体 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10079167B2 (en) | 2014-11-20 | 2018-09-18 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chucking device |
KR20170013655A (ko) * | 2015-07-28 | 2017-02-07 | (주)샘씨엔에스 | 정전 척용 세라믹 조성물, 이를 이용한 정전 척 |
KR102393287B1 (ko) * | 2015-07-28 | 2022-05-02 | (주)샘씨엔에스 | 정전 척용 세라믹 조성물, 이를 이용한 정전 척 |
Also Published As
Publication number | Publication date |
---|---|
JP4789416B2 (ja) | 2011-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4648030B2 (ja) | イットリア焼結体、セラミックス部材、及び、イットリア焼結体の製造方法 | |
US7416793B2 (en) | Electrostatic chuck and manufacturing method for the same, and alumina sintered member and manufacturing method for the same | |
TW442888B (en) | Electrostatic holding apparatus and method of producing the same | |
WO2001066488A1 (fr) | Substrat ceramique pour fabrication/inspection de semi-conducteur | |
JP5926870B1 (ja) | セラミック構造体、基板保持装置用部材及びセラミック構造体の製法 | |
WO2001062686A1 (fr) | Piece frittee en nitrure d'aluminium, substrat en ceramique, corps chauffant en ceramique et mandrin electrostatique | |
JP2004260039A (ja) | 半導体あるいは液晶製造装置用保持体およびそれを搭載した半導体あるいは液晶製造装置 | |
KR102497967B1 (ko) | 복합 소결체, 반도체 제조 장치 부재 및 복합 소결체의 제조 방법 | |
JP2005317749A (ja) | 半導体製造装置用保持体及びそれを搭載した半導体製造装置 | |
JP3663306B2 (ja) | 窒化アルミニウム質焼結体およびそれを用いた静電チャック | |
JP5644161B2 (ja) | 半導体保持用の静電チャックおよびその製造方法 | |
KR20230042679A (ko) | 복합 소결체 및 복합 소결체의 제조 방법 | |
JP4789416B2 (ja) | セラミック抵抗体及びその製造方法並びに静電チャック | |
JP2002110772A (ja) | 電極内蔵セラミックス及びその製造方法 | |
JP2004288887A (ja) | 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置 | |
JP2001319967A (ja) | セラミック基板の製造方法 | |
JP3623102B2 (ja) | 静電チャック | |
JPH11317441A (ja) | 静電チャック及びその評価方法 | |
JP3965467B2 (ja) | セラミック抵抗体及びその製造方法並びに静電チャック | |
JPH11100271A (ja) | セラミック抵抗体およびそれを用いた静電チャック | |
JP3667077B2 (ja) | 静電チャック | |
JP2004111289A (ja) | セラミックスヒータ及びその製造方法 | |
JP2007186382A (ja) | 窒化アルミニウム焼結体 | |
JP3588253B2 (ja) | 静電チャック | |
JP2008227190A (ja) | 静電チャック、静電チャックの製造方法および基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070116 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091118 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100302 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100610 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110202 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110621 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110719 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140729 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4789416 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |