JP2005191555A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005191555A5 JP2005191555A5 JP2004348260A JP2004348260A JP2005191555A5 JP 2005191555 A5 JP2005191555 A5 JP 2005191555A5 JP 2004348260 A JP2004348260 A JP 2004348260A JP 2004348260 A JP2004348260 A JP 2004348260A JP 2005191555 A5 JP2005191555 A5 JP 2005191555A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- conductive
- opening
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004348260A JP4877868B2 (ja) | 2003-12-02 | 2004-12-01 | 表示装置の作製方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003403850 | 2003-12-02 | ||
JP2003403849 | 2003-12-02 | ||
JP2003403849 | 2003-12-02 | ||
JP2003403850 | 2003-12-02 | ||
JP2004348260A JP4877868B2 (ja) | 2003-12-02 | 2004-12-01 | 表示装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005191555A JP2005191555A (ja) | 2005-07-14 |
JP2005191555A5 true JP2005191555A5 (zh) | 2007-12-27 |
JP4877868B2 JP4877868B2 (ja) | 2012-02-15 |
Family
ID=34799309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004348260A Expired - Fee Related JP4877868B2 (ja) | 2003-12-02 | 2004-12-01 | 表示装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4877868B2 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007035348A (ja) * | 2005-07-25 | 2007-02-08 | Sharp Corp | エレクトロルミネッセンス表示装置及びその製造方法 |
JP2008033284A (ja) * | 2006-07-04 | 2008-02-14 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
TWI427682B (zh) | 2006-07-04 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
JP2008020772A (ja) * | 2006-07-14 | 2008-01-31 | Epson Imaging Devices Corp | 液晶表示パネル |
JP2008065012A (ja) * | 2006-09-07 | 2008-03-21 | Future Vision:Kk | 液晶表示パネル |
JP2011011156A (ja) * | 2009-07-02 | 2011-01-20 | Konica Minolta Holdings Inc | パターン描画方法、配線パターン描画方法及び薄膜トランジスタ基板の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0820643B2 (ja) * | 1989-08-29 | 1996-03-04 | シャープ株式会社 | アクティブマトリクス表示装置 |
JPH10209463A (ja) * | 1997-01-27 | 1998-08-07 | Matsushita Electric Ind Co Ltd | 表示装置の配線形成方法、表示装置の製造方法、および表示装置 |
JP2003318401A (ja) * | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | デバイスの製造方法、デバイス、表示装置、および電子機器 |
JP3965562B2 (ja) * | 2002-04-22 | 2007-08-29 | セイコーエプソン株式会社 | デバイスの製造方法、デバイス、電気光学装置及び電子機器 |
-
2004
- 2004-12-01 JP JP2004348260A patent/JP4877868B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7867814B2 (en) | Resistance memory element and method of manufacturing the same | |
US8445885B2 (en) | Nonvolatile memory element having a thin platinum containing electrode | |
JP2008205444A5 (zh) | ||
JP5743064B2 (ja) | 薄膜トランジスタおよびその製造方法、並びに表示装置 | |
CN105765720B (zh) | 半导体装置 | |
US9502647B2 (en) | Resistive random-access memory (RRAM) with a low-K porous layer | |
JP2010123595A (ja) | 薄膜トランジスタおよび表示装置 | |
US9231222B2 (en) | Thin film transistor and method of manufacturing the same | |
JP2008147640A5 (zh) | ||
JP2010515240A5 (zh) | ||
US8390124B2 (en) | Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings | |
JP2008211199A5 (zh) | ||
JP2008522443A5 (zh) | ||
JP5585909B2 (ja) | コンタクトプラグ、配線、半導体装置およびコンタクトプラグ形成方法 | |
WO2014166160A1 (zh) | 薄膜晶体管及其制造方法、阵列基板和显示装置 | |
JP2006310799A5 (zh) | ||
US20140361304A1 (en) | Thin film transistor array panel | |
US9281475B2 (en) | Resistive random-access memory (RRAM) with multi-layer device structure | |
JP2007250804A5 (zh) | ||
US11770985B2 (en) | Resistive random access memory and method of fabricating the same | |
US20100224849A1 (en) | Oxide diode, method of manufacturing the same, and electronic device and resistive memory device including the same | |
JP2012191008A (ja) | 表示装置および電子機器 | |
US7875885B2 (en) | Display element and method of manufacturing the same | |
JP2007158129A5 (zh) | ||
JP2005191555A5 (zh) |