JP2005166854A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2005166854A
JP2005166854A JP2003402360A JP2003402360A JP2005166854A JP 2005166854 A JP2005166854 A JP 2005166854A JP 2003402360 A JP2003402360 A JP 2003402360A JP 2003402360 A JP2003402360 A JP 2003402360A JP 2005166854 A JP2005166854 A JP 2005166854A
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Japan
Prior art keywords
wire
semiconductor element
semiconductor device
electrode
surface electrode
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JP2003402360A
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JP4111130B2 (en
Inventor
Yasushi Toyoda
靖 豊田
Katsuaki Saito
克明 斎藤
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2003402360A priority Critical patent/JP4111130B2/en
Publication of JP2005166854A publication Critical patent/JP2005166854A/en
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Publication of JP4111130B2 publication Critical patent/JP4111130B2/en
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device high in resistance to surge current breakdown by avoiding the concentration of a current at a point where a wire joins electrodes formed on the semiconductor element surface. <P>SOLUTION: In this semiconductor device, one metal wire is connected to semiconductor element surface electrodes at two or more locations, and the metal wire is linearly arranged between junctions along planes of the surface electrodes. In another example, one metal wire is connected to semiconductor element electrodes at one location. A junction length is 5-100 times a metal wire diameter, and the junction is linearly arranged along the planes of surface electrodes. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、サージ電流破壊耐量の高いダイオードを有する半導体装置に関する。   The present invention relates to a semiconductor device having a diode with high surge current breakdown resistance.

ＩＧＢＴ、ダイオード、ＧＴＯ、トランジスタ等のパワー半導体モジュールが従来技術として知られている。これらのパワー半導体素子はその耐圧や電流容量に応じて、各種インバータ装置などに適用されている。中でもＩＧＢＴは大電流の高周波動作が可能であり、電圧制御素子であるために制御が容易であるなどの利点を有している。また安全性や実装上の簡便性から、多くの場合はモジュールのベース部分と電流通流部分とが絶縁基板によって電気的に絶縁された、内部絶縁型の構造となっている。   Power semiconductor modules such as IGBTs, diodes, GTOs, and transistors are known as conventional techniques. These power semiconductor elements are applied to various inverter devices and the like according to their withstand voltage and current capacity. Among them, the IGBT is capable of high-frequency operation with a large current and has advantages such as easy control because it is a voltage control element. In many cases, the base portion of the module is electrically insulated from the current passing portion by an insulating substrate for safety and ease of mounting.

ＩＧＢＴモジュールでは、逆電圧印加防止と還流目的でダイオードが設けてある場合が多い。このダイオードに要求される特性の中に、サージ電流破壊耐量がある。これは何らかの理由により突発的に大電流がダイオードを流れても破壊しない電流を示すもので、想定される波形である正弦波電流に対して規定されることが多い。このサージ電流破壊耐量が高いほど、実使用において誤動作による半導体装置の破壊確率が下がり、使いやすいものになる。   In an IGBT module, a diode is often provided for the purpose of preventing reverse voltage application and refluxing. Among the characteristics required for this diode is surge current breakdown capability. This indicates a current that does not break even if a large current suddenly flows through the diode for some reason, and is often specified for a sine wave current that is an assumed waveform. The higher the surge current breakdown tolerance, the lower the probability of breakdown of the semiconductor device due to malfunction in actual use, making it easier to use.

このサージ電流によってダイオードが破壊する場合、ダイオード素子におけるワイヤ近傍の半導体素子表面に形成した電極（以下、表面電極と略す。）が溶解している。このことからワイヤ付近の表面電極部に大電流が集中し、温度上昇により電極が溶解したと考えられる。つまり表面電極部に局所的に電流を集中させない構造を持たせることがサージ電流破壊耐量向上に有効である。そのための手法として、ワイヤの抵抗値を等しくする方法が特許文献１に開示されている。この特許文献１では図３（ａ）に示すワイヤ３の抵抗値を全て等しくしてある。なお、図３（ａ）において、符号１は電力半導体素子、２は表面電極、３はワイヤ、４、５は外部電極、６は絶縁基板、８はワイヤと電極との接合部である。また、図３（ｂ）は、図３（ａ）のＣ−Ｃ′での断面図であり、符号７は半田を示す。   When the diode is destroyed by this surge current, an electrode (hereinafter abbreviated as a surface electrode) formed on the surface of the semiconductor element near the wire in the diode element is dissolved. From this, it is considered that a large current was concentrated on the surface electrode near the wire, and the electrode was dissolved by the temperature rise. In other words, it is effective for improving the surge current breakdown resistance to have a structure that does not concentrate current locally on the surface electrode portion. As a technique for this purpose, Patent Document 1 discloses a method for equalizing the resistance values of wires. In Patent Document 1, all the resistance values of the wires 3 shown in FIG. In FIG. 3A, reference numeral 1 is a power semiconductor element, 2 is a surface electrode, 3 is a wire, 4 is an external electrode, 6 is an insulating substrate, and 8 is a joint between the wire and the electrode. FIG. 3B is a cross-sectional view taken along the line CC ′ of FIG. 3A, and reference numeral 7 denotes solder.

また、特許文献２では、外部電極のエリアや空間的スペースを小さくするために、１本のワイヤを表面電極上の２箇所以上で接合する手法を開示している。   Patent Document 2 discloses a technique in which a single wire is joined at two or more locations on the surface electrode in order to reduce the area and spatial space of the external electrode.

特開平４−９４１４１号公報JP-A-4-94141 特開平１０−３２２１８号公報Japanese Patent Laid-Open No. 10-32218

前記特許文献１に記載されているようにワイヤの抵抗値を等しくしただけでは、ワイヤ接合部の表面電極が溶解することの本質的な対策にはならず、ワイヤの本数を増やすなどしてワイヤ接合部の数をできるだけ多くして、表面電極の電流密度を下げる必要がある。しかしながら、表面電極や外部電極のワイヤ接合可能エリアが狭かったり、あるいは空間的スペースが狭い場合には、ワイヤの本数を多くできない問題がある。   Just as the resistance value of the wire is equalized as described in Patent Document 1, it does not become an essential measure against melting of the surface electrode of the wire joint portion, and the wire is increased by increasing the number of wires. It is necessary to reduce the current density of the surface electrode by increasing the number of junctions as much as possible. However, there is a problem that the number of wires cannot be increased when the area where the surface electrode or the external electrode can be bonded to the wire is narrow or the spatial space is narrow.

また、前記特許文献２に記載されているように、単に接合箇所を増やしただけでは、外部電極に最も近い接点に電流が集中するので、サージ電流破壊耐量を向上できない。   Further, as described in Patent Document 2, simply increasing the number of junctions causes the current to concentrate at the contact closest to the external electrode, so the surge current breakdown resistance cannot be improved.

本発明の目的は、表面電極上のワイヤ接合部における電流集中が小さく、サージ電流破壊耐量が高い半導体装置を提供することである。   An object of the present invention is to provide a semiconductor device having a small current concentration at a wire junction on a surface electrode and a high surge current breakdown resistance.

本発明の半導体装置は、１本のワイヤと半導体素子の表面電極とが２箇所以上で接合し、かつ前記金属ワイヤが前記各接合部の間をループを持たせずに表面電極面に沿って直線配置して、ワイヤの抵抗を小さくした。   In the semiconductor device according to the present invention, one wire and the surface electrode of the semiconductor element are bonded at two or more locations, and the metal wire does not have a loop between the bonding portions along the surface electrode surface. The resistance of the wire was reduced by arranging in a straight line.

また、本発明の半導体装置は、１本のワイヤと半導体素子の表面電極とが１箇所で接合し、該接合部の長さが金属ワイヤの直径の５倍から１００倍であって、かつワイヤの接合部が表面電極面に沿って直線配置してワイヤ接合部での電流集中を回避した。   In the semiconductor device of the present invention, one wire and the surface electrode of the semiconductor element are joined at one place, and the length of the joint is 5 to 100 times the diameter of the metal wire, and the wire These junctions were arranged linearly along the surface electrode surface to avoid current concentration at the wire junction.

本発明の半導体装置は、表面電極上のワイヤ接合部における電流集中が小さく、サージ電流破壊耐量を高くできる。   In the semiconductor device of the present invention, the current concentration at the wire junction on the surface electrode is small, and the surge current breakdown resistance can be increased.

以下本発明の実施例の詳細を図面を参照しながら説明する。   Details of embodiments of the present invention will be described below with reference to the drawings.

図１（ａ）は、本実施例の半導体装置の平面図を示す。また、図１（ｂ）は図１（ａ）のＡ−Ａ′での断面図である。図１（ａ）、図１（ｂ）で、符号１は電力半導体素子、２は表面電極、３はワイヤ、４、５は外部電極、６は絶縁基板、７は半田、８はワイヤ３と表面電極２との接合部、９はワイヤと外部電極５との接合部である。表面電極２は電力半導体素子１の表面に形成されていて、外部電極４は電力半導体素子１の裏面と半田７を介して電気的に接合している。以下、電力半導体素子１としてシリコン基板に形成したダイオードを例に説明する。   FIG. 1A is a plan view of the semiconductor device of this example. FIG. 1B is a cross-sectional view taken along the line AA ′ of FIG. 1A and 1B, reference numeral 1 denotes a power semiconductor element, 2 denotes a surface electrode, 3 denotes a wire, 4 denotes an external electrode, 6 denotes an insulating substrate, 7 denotes solder, and 8 denotes a wire 3. A joint portion 9 with the surface electrode 2 is a joint portion between the wire and the external electrode 5. The front electrode 2 is formed on the surface of the power semiconductor element 1, and the external electrode 4 is electrically joined to the back surface of the power semiconductor element 1 via the solder 7. Hereinafter, a diode formed on a silicon substrate as the power semiconductor element 1 will be described as an example.

ワイヤ３は外部電極５から半導体素子１へ電流を流す役目をしており、半導体素子１の表面電極２によって導通している。本実施例では、ワイヤ３はアルミニウムワイヤあるいは、アルミニウムを主成分とするアルミニウム合金ワイヤであり、その直径は１５０μｍから１mm程度である。また、表面電極２はシリコン半導体基板に直接あるいは絶縁膜を介して配置したアルミニウム膜あるいはアルミニウムを主成分とするアルミニウム合金（例えばＡｌ−Ｓｉ合金）の膜であって、１辺が３mmから１５mm程度の４辺形である。表面電極２は、アルミニウムあるいはアルミニウム合金と、例えば、ＴｉＷなどとを積層した多層膜であっても良い。ワイヤ３と表面電極２や外部電極５とは、例えば超音波接合によって電気的に接合されている。なお、ワイヤ３は径が太過ぎると表面電極２への接合の際に過大な圧力を加え表面電極にダメージを与えるので、好ましくない。   The wire 3 serves to flow current from the external electrode 5 to the semiconductor element 1, and is electrically connected by the surface electrode 2 of the semiconductor element 1. In this embodiment, the wire 3 is an aluminum wire or an aluminum alloy wire containing aluminum as a main component, and its diameter is about 150 μm to 1 mm. The surface electrode 2 is an aluminum film disposed directly or through an insulating film on a silicon semiconductor substrate or an aluminum alloy film (for example, Al-Si alloy) containing aluminum as a main component, and one side is about 3 mm to 15 mm. The quadrilateral. The surface electrode 2 may be a multilayer film in which aluminum or an aluminum alloy and, for example, TiW are laminated. The wire 3 and the surface electrode 2 or the external electrode 5 are electrically joined by, for example, ultrasonic joining. If the diameter of the wire 3 is too large, an excessive pressure is applied when the wire 3 is joined to the surface electrode 2, which damages the surface electrode.

本実施例では、１本のワイヤ３が電力半導体素子１の表面電極２の上の複数箇所（図１（ａ）では２箇所）の接合部８で接合されているが、ワイヤ３は、その接合部８の間でループを形成せずに、表面電極２の電極面に沿って接合部８の間を最短の長さで１本の直線で結ぶように配置してある。このように本実施例の半導体装置ではワイヤ３が最短の長さで表面電極２の上の各接合部８を結んでいるので、複数の接合部８間のワイヤ３の電気抵抗が最も小さくなり、表面電極２側の接合部８への電流集中が回避できる。なお、１本のワイヤ３を表面電極に接続する接合部８の数は、２箇所から５箇所が好ましい。   In the present embodiment, one wire 3 is joined at a plurality of joints 8 (two places in FIG. 1A) on the surface electrode 2 of the power semiconductor element 1. A loop is not formed between the joint portions 8, and the joint portions 8 are arranged so as to be connected by a single straight line with the shortest length along the electrode surface of the surface electrode 2. As described above, in the semiconductor device of the present embodiment, the wire 3 connects each joint 8 on the surface electrode 2 with the shortest length, so that the electrical resistance of the wire 3 between the plurality of joints 8 becomes the smallest. Further, current concentration at the junction 8 on the surface electrode 2 side can be avoided. Note that the number of joints 8 that connect one wire 3 to the surface electrode is preferably 2 to 5.

本実施例では、図１（ａ）、図１（ｂ）に示すように、平行に配置した複数本数のワイヤ３全ての表面電極２側の端部をそれぞれ複数箇所の接合部８で接合しているが、このワイヤ３は１本であっても良い。また、複数あるワイヤ３のうちの、少なくとも１本のワイヤ３が図１（ａ）、図１（ｂ）に示すような接合部８を備えていても良い。このように本実施例では、ワイヤ３の本数を大きく増やしたり、ワイヤの径を極端に大きくすることなく、表面電極２側の接合部８への電流集中を回避したので、サージ電流破壊耐量が高い半導体装置を実現できた。   In this embodiment, as shown in FIGS. 1 (a) and 1 (b), the end portions on the surface electrode 2 side of all the plurality of wires 3 arranged in parallel are joined together by a plurality of joining portions 8, respectively. However, the number of the wires 3 may be one. In addition, at least one of the plurality of wires 3 may include a joint 8 as shown in FIGS. 1 (a) and 1 (b). In this way, in this embodiment, current concentration at the junction 8 on the surface electrode 2 side is avoided without greatly increasing the number of wires 3 or extremely increasing the diameter of the wires, so that the surge current breakdown resistance is improved. We were able to realize a high semiconductor device.

図２（ａ）に本実施例の半導体装置の平面図を示す。また、図２（ｂ）は、図２（ａ）のＢ−Ｂ′での断面図である。本実施例の半導体装置は、１本のワイヤ３が電力半導体素子１の表面電極２の１箇所の接合部８で接合されている。ワイヤ３の接合部８は、表面電極２の電極面に沿ってワイヤ３の直径の５倍から１００倍、好ましくは１０倍から５０倍の長さ、より好ましくは２０倍から４０倍の長さに渡って、接合している点が実施例１の半導体装置と異なる。接合部８の長さがワイヤ３の直径の５倍未満では表面電極２とワイヤ３との接合部８に過大な電流が集中し好ましくない。また、接合部８の長さがワイヤ３の直径の１００倍以上では、ワイヤ３を表面電極２にムラなく接合できない。   FIG. 2A is a plan view of the semiconductor device of this example. FIG. 2B is a cross-sectional view taken along the line BB ′ of FIG. In the semiconductor device of this embodiment, one wire 3 is joined at one joint 8 of the surface electrode 2 of the power semiconductor element 1. The joint 8 of the wire 3 is 5 to 100 times, preferably 10 to 50 times, more preferably 20 to 40 times the diameter of the wire 3 along the electrode surface of the surface electrode 2. However, the semiconductor device of Example 1 is different in that it is joined. If the length of the junction 8 is less than 5 times the diameter of the wire 3, an excessive current is concentrated on the junction 8 between the surface electrode 2 and the wire 3, which is not preferable. In addition, when the length of the bonding portion 8 is 100 times or more the diameter of the wire 3, the wire 3 cannot be bonded to the surface electrode 2 without unevenness.

本実施例の半導体装置では、図２（ａ）、図２（ｂ）に示すように、ワイヤ３は表面電極２の横方向に渡って接合されていて、接合部８の接合面積が大きいので、表面電極２の局部的な電流密度上昇を回避でき、サージ電流破壊耐量が向上する。   In the semiconductor device of the present embodiment, as shown in FIGS. 2A and 2B, the wire 3 is bonded in the lateral direction of the surface electrode 2, and the bonding area of the bonding portion 8 is large. The local current density rise of the surface electrode 2 can be avoided, and the surge current breakdown resistance is improved.

本実施例の半導体装置は、複数本のワイヤ３のうち、１本のワイヤ３の表面電極２側の端部を複数箇所の接合部８で接合したものと、１本のワイヤ３が電力半導体素子１の表面電極２の１箇所の接合部８で接合していて、この接合部８が、表面電極２の電極面に沿ってワイヤ３の直径の５倍から１００倍、好ましくは１０倍から５０倍の長さに渡って接合しているものとを備えていることだけが前記実施例１、実施例２と異なる。本実施例でも表面電極２側の接合部８への電流集中を回避したので、サージ電流破壊耐量が高い半導体装置が実現できた。   In the semiconductor device of the present embodiment, among the plurality of wires 3, one end of the wire 3 on the surface electrode 2 side is joined by a plurality of joining portions 8, and one wire 3 is a power semiconductor. Joining is performed at one joint 8 on the surface electrode 2 of the element 1, and this joint 8 is 5 to 100 times, preferably 10 times the diameter of the wire 3 along the electrode surface of the surface electrode 2. It differs from the said Example 1 and Example 2 only in having provided what was joined over 50 times the length. Also in this example, current concentration at the junction 8 on the surface electrode 2 side was avoided, so that a semiconductor device with high surge current breakdown resistance could be realized.

実施例１の半導体装置の説明図である。FIG. 6 is an explanatory diagram of the semiconductor device of Example 1; 実施例２の半導体装置の説明図である。FIG. 6 is an explanatory diagram of a semiconductor device of Example 2. 従来技術の半導体装置の説明図である。It is explanatory drawing of the semiconductor device of a prior art.

符号の説明Explanation of symbols

１…電力半導体素子、２…表面電極、３…ワイヤ、４，５…外部電極、６…絶縁基板、７…半田、８，９…接合部。
DESCRIPTION OF SYMBOLS 1 ... Power semiconductor element, 2 ... Surface electrode, 3 ... Wire, 4, 5 ... External electrode, 6 ... Insulating substrate, 7 ... Solder, 8, 9 ... Joint part.

Claims (4)

表面に電極を有する半導体素子と、前記半導体素子の外部に設けられた外部電極と、前記半導体素子と前記外部電極とを搭載する絶縁基板と、前記半導体素子と外部電極とを接合する金属ワイヤを有する半導体装置において、
１本の前記金属ワイヤと半導体素子の前記表面電極とが２箇所以上で接合し、かつ前記金属ワイヤが前記各接合部の間を表面電極面に沿って直線配置されていることを特徴とする半導体装置。 A semiconductor element having an electrode on the surface; an external electrode provided outside the semiconductor element; an insulating substrate on which the semiconductor element and the external electrode are mounted; and a metal wire that joins the semiconductor element and the external electrode. In a semiconductor device having
One metal wire and the surface electrode of the semiconductor element are joined at two or more places, and the metal wire is linearly arranged along the surface electrode surface between the joints. Semiconductor device. 表面に電極を有する半導体素子と、前記半導体素子の外部に設けられた外部電極と、前記半導体素子と前記外部電極とを搭載する絶縁基板と、前記半導体素子と外部電極とを接合する金属ワイヤを有する半導体装置において、
１本の前記金属ワイヤと半導体素子の前記表面電極とが１箇所で接合し、該接合部の長さが金属ワイヤの直径の５倍から１００倍であって、かつ前記金属ワイヤの接合部が表面電極面に沿って直線配置されていることを特徴とする半導体装置。 A semiconductor element having an electrode on the surface; an external electrode provided outside the semiconductor element; an insulating substrate on which the semiconductor element and the external electrode are mounted; and a metal wire that joins the semiconductor element and the external electrode. In a semiconductor device having
One metal wire and the surface electrode of the semiconductor element are joined at one place, the length of the joint is 5 to 100 times the diameter of the metal wire, and the joint of the metal wire is A semiconductor device, wherein the semiconductor device is linearly arranged along a surface electrode surface. 請求項１あるいは請求項２の何れかに記載の半導体装置において、前記金属ワイヤの材質がアルミニウムもしくはアルミニウムを主成分とする合金であることを特徴とする半導体装置。   3. The semiconductor device according to claim 1, wherein the metal wire is made of aluminum or an alloy containing aluminum as a main component. 請求項１から請求項３の何れかに記載の半導体装置において、前記半導体素子がダイオードであり、前記表面電極がアルミニウムもしくはアルミニウム合金であることを特徴とする半導体装置。
4. The semiconductor device according to claim 1, wherein the semiconductor element is a diode, and the surface electrode is aluminum or an aluminum alloy.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220822A (en) * 2006-02-15 2007-08-30 Matsushita Electric Ind Co Ltd Connection structure and its fabrication process
JP2021141237A (en) * 2020-03-06 2021-09-16 三菱電機株式会社 Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220822A (en) * 2006-02-15 2007-08-30 Matsushita Electric Ind Co Ltd Connection structure and its fabrication process
JP2021141237A (en) * 2020-03-06 2021-09-16 三菱電機株式会社 Semiconductor device
JP7334655B2 (en) 2020-03-06 2023-08-29 三菱電機株式会社 semiconductor equipment

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