JP2005159328A5 - - Google Patents

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Publication number
JP2005159328A5
JP2005159328A5 JP2004311240A JP2004311240A JP2005159328A5 JP 2005159328 A5 JP2005159328 A5 JP 2005159328A5 JP 2004311240 A JP2004311240 A JP 2004311240A JP 2004311240 A JP2004311240 A JP 2004311240A JP 2005159328 A5 JP2005159328 A5 JP 2005159328A5
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JP
Japan
Prior art keywords
electrode
liquid
semiconductor film
plasma treatment
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004311240A
Other languages
English (en)
Japanese (ja)
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JP2005159328A (ja
JP4393968B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2004311240A priority Critical patent/JP4393968B2/ja
Priority claimed from JP2004311240A external-priority patent/JP4393968B2/ja
Publication of JP2005159328A publication Critical patent/JP2005159328A/ja
Publication of JP2005159328A5 publication Critical patent/JP2005159328A5/ja
Application granted granted Critical
Publication of JP4393968B2 publication Critical patent/JP4393968B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004311240A 2003-10-28 2004-10-26 配線の作製方法及び半導体装置の作製方法 Expired - Fee Related JP4393968B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004311240A JP4393968B2 (ja) 2003-10-28 2004-10-26 配線の作製方法及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003368030 2003-10-28
JP2004311240A JP4393968B2 (ja) 2003-10-28 2004-10-26 配線の作製方法及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005159328A JP2005159328A (ja) 2005-06-16
JP2005159328A5 true JP2005159328A5 (cg-RX-API-DMAC7.html) 2006-05-11
JP4393968B2 JP4393968B2 (ja) 2010-01-06

Family

ID=34741095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004311240A Expired - Fee Related JP4393968B2 (ja) 2003-10-28 2004-10-26 配線の作製方法及び半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4393968B2 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4618087B2 (ja) * 2004-10-15 2011-01-26 セイコーエプソン株式会社 仕切部材の形成方法、カラーフィルター用仕切部材の形成方法
JP2007043113A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置、半導体装置の作製方法
JP4761199B2 (ja) * 2005-09-29 2011-08-31 セイコーエプソン株式会社 半導体素子用電極の製造方法、トランジスタの製造方法、およびｐｉｎダイオードの製造方法
KR20070053060A (ko) 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
TWI338189B (en) * 2006-01-13 2011-03-01 Hon Hai Prec Ind Co Ltd Substrate structure and method of manufacturing thin film pattern layer using the same
JP4542527B2 (ja) * 2006-06-30 2010-09-15 株式会社フューチャービジョン 白色の色度差を低減した表示装置とその製造方法
JP2008130866A (ja) * 2006-11-22 2008-06-05 Seiko Epson Corp 表面改質方法およびパターン形成方法
WO2009096525A1 (ja) * 2008-02-01 2009-08-06 Nec Corporation 薄膜トランジスタ
JP5560629B2 (ja) * 2009-09-04 2014-07-30 コニカミノルタ株式会社 薄膜トランジスタの製造方法
CN111886701A (zh) 2018-03-28 2020-11-03 堺显示器制品株式会社 有机el显示装置及其制造方法
CN119031747A (zh) * 2018-04-20 2024-11-26 堺显示器制品株式会社 El器件及其制造方法

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