JP2005159129A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-sized semiconductor device whose outer shape has the same size with an outer shape of a semiconductor element. <P>SOLUTION: The semiconductor device is provided with the plate-shaped semiconductor element 1 wherein an electrode 1a is formed on the outer peripheral part of one main surface; a first insulating layer 3a which is laminated on the central part of the one main surface of the semiconductor element 1, and in which a connection pad 4 is formed on the outer peripheral part; a second insulating layer 3b which is laminated on a central part of the first insulating layer, and in which an external connection pad 5 is formed on the surface; a bonding wire 7 which connects electrically the electrode 1a and the connection pad 4; and resin 8 for sealing which covers the one main surface exposing the surface on which the external connection pad 5 of the second insulating layer 3b was formed. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

  The present invention relates to a semiconductor device on which a semiconductor element such as an IC or LSI is mounted.

  Conventionally, a semiconductor device in which a semiconductor element such as an IC or LSI is hermetically sealed includes an insulating base having a mounting portion on which an electronic component is mounted on an upper surface, and wiring derived from the mounting portion to the lower surface of the insulating base. A semiconductor element is mounted on a mounting portion of a wiring board having a conductor, and the semiconductor element is hermetically sealed with a lid or a sealing resin. In addition to the semiconductor elements, passive elements such as capacitive elements may be mounted and mounted on the wiring board in some cases.

  The semiconductor element generally has a configuration in which an electronic circuit is formed on one main surface of a plate-shaped semiconductor substrate such as a silicon substrate, and a plurality of electrodes are formed side by side on the outer peripheral portion of the one main surface. If the electronic circuits and electrodes formed in the semiconductor element are exposed to the outside air, dust in the outside air adheres or oxidative corrosion progresses, so that it does not function normally as a semiconductor element such as an IC or LSI. Therefore, it is necessary to seal so as not to come into contact with outside air.

  Further, a general wiring board as a conventional one is formed by laminating a plurality of insulating layers made of ceramics such as an aluminum oxide sintered body, and has an insulating base having a mounting portion on which electronic components are mounted on the upper surface, The wiring conductor is formed on the surface of the insulating layer. When electrical connection is made between the wiring conductors of the upper and lower insulating layers, a through-hole is formed by providing a through-hole penetrating the insulating layer in the thickness direction and filling the through-hole with a conductor.

  The mounting portion is usually formed at the center of the upper surface of the insulating base, and a part of the wiring conductor is exposed at or around the mounting portion. The exposed portion of the wiring conductor functions as a connection pad for connecting an electrode formed on the outer peripheral portion of one main surface of the semiconductor element, and the electrode and the connection pad are electrically connected through a bonding wire or the like. The

  In addition, a connection pad for external connection is formed at the lead-out end portion on the lower surface side of the insulating base in the wiring conductor.

  Then, a semiconductor element such as an IC or LSI is mounted on the mounting portion in the center of the upper surface of the insulating base, and the electrode of the semiconductor element is connected to the exposed portion of the wiring conductor via a bonding wire so that the semiconductor element is sealed or sealed A semiconductor device is formed by covering and sealing with resin or the like.

Then, the semiconductor device is mounted on the external circuit board by connecting the connection pads to the circuit conductor of the external circuit board via solder or conductive resin, and the semiconductor element is electrically connected to the external electric circuit.
JP 2002-118204 A

  However, the conventional semiconductor device has a mounting portion on which the semiconductor element is mounted at the center of the upper surface of the insulating base, and the semiconductor is mounted on the mounting portion of the wiring board in which the wiring conductor is formed from the mounting portion to the lower surface of the insulating base. Since the element is mounted, it is necessary to secure an area for mounting the semiconductor element on the insulating base and sealing with a lid or a sealing resin. However, there has been a limit to the recent miniaturization of semiconductor devices, particularly the miniaturization of semiconductor devices in plan view.

  The present invention has been completed in view of the above problems in the prior art, and an object of the present invention is to provide a small semiconductor device in which the outer shape of the semiconductor device is the same as the outer shape of the semiconductor element.

  In the semiconductor device of the present invention, a plate-like semiconductor element having an electrode formed on the outer peripheral portion of one main surface, and a connection pad formed on the outer peripheral portion laminated at the central portion of the one main surface of the semiconductor element. The first insulating layer, the second insulating layer laminated on the center of the first insulating layer and having an external connection pad formed on the surface, and the electrode and the connection pad electrically A bonding wire to be connected; and a sealing resin that exposes the surface of the second insulating layer on which the external connection pads are formed and covers the one main surface. .

  According to the semiconductor device of the present invention, a plate-like semiconductor element having an electrode formed on the outer peripheral portion of one main surface, and a connection pad formed on the outer peripheral portion laminated on the central portion of the one main surface of the semiconductor element. A first insulating layer, a second insulating layer laminated on the center of the first insulating layer and having an external connection pad formed on the surface thereof, and bonding for electrically connecting the electrode and the connection pad Since it comprises a wire and a sealing resin that exposes the surface of the second insulating layer on which the external connection pads are formed and covers one main surface, the first insulating layer is more than the outer shape of the semiconductor element. The outer shape of the second insulating layer is smaller than the outer shape of the first insulating layer. Therefore, the electrode of the semiconductor element is electrically connected to the connection pad formed on the first insulating layer having a smaller outer shape than the semiconductor element through the bonding wire, and has an outer shape smaller than that of the first insulating layer. Since the external connection pad formed in the second insulating layer can be connected to the outside, the external shape of the semiconductor device can be reduced to the same size as the external shape of the semiconductor element.

  In addition, according to the semiconductor device of the present invention, the electronic circuit and the electrode on the one main surface of the semiconductor element can be reliably sealed by the first insulating layer and the sealing resin. The reliability of stopping can be ensured satisfactorily.

  The semiconductor device of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor device of the present invention. In FIG. 1, 1 is a semiconductor element, 3a is a first insulating layer, 3b is a second insulating layer, 4 is a connection pad, 5 is an external connection pad, 7 is a bonding wire, and 8 is a sealing resin. The semiconductor device 9 of the present invention is basically constituted by the semiconductor element 1, the first insulating layer 3a, the second insulating layer 3b, the connection pad 4, the external connection pad 5, the bonding wire 7 and the sealing resin 8. Composed.

  The semiconductor element 1 has a shape in which an electrode 1a is formed on the outer peripheral portion of one main surface (lower surface in the example of FIG. 1) of a plate-like substrate made of a semiconductor such as silicon, Usually, an electronic circuit such as an integrated circuit is formed.

  The first insulating layer 3a has connection pads 4 formed on the outer peripheral portion, and functions as a base for forming the connection pads 4 and the like. A second insulating layer 3b is laminated at the center of the first insulating layer 3a, and an external connection pad 5 is formed on the surface of the second insulating layer 3b.

  The insulating layer composed of the first and second insulating layers 3a and 3b is a part of a sealing material that seals an electronic circuit or the like formed in the central portion of one main surface of the semiconductor element 1. It is a quadrangular shape that functions and has a smaller outer shape than the semiconductor element 1 in plan view.

  In this case, when the first insulating layer 3a covers and seals one main surface of the semiconductor element 1, it is preferable that the outer shape is larger as long as it does not cover the electrode 1a. In order to secure the joining area and secure the joining strength, it is preferable to form a square plate that is smaller than the outer shape of the semiconductor element 1 by 0.6 mm or more on each side.

  The second insulating layer 3b is formed so that the connection pad 4 is exposed with a length of 0.8 mm or more in order to increase workability and connection reliability when the bonding wire 7 is connected to the connection pad 4. It is preferable to form. Since the connection pad 4 is formed on the outer peripheral portion of the first insulating layer 3a for easy connection of the bonding wire 7, the second insulating layer 3b is formed on the first insulating layer on each side. It becomes a square plate shape smaller by about 0.8 mm than 3a.

  The external connection pad 5 functions as a connection conductor for electrically connecting the semiconductor device 9 to an external electric circuit. The external connection pad 5 is electrically connected through a wiring conductor 6 formed inside the second insulating layer 3b. By electrically connecting the external connection pad 5 to an external electric circuit (not shown) via solder or the like, the electrode 1a of the semiconductor element is bonded to the bonding wire 7, the connection pad 4, the wiring conductor 6, and the external connection pad. 5 is electrically connected to an external electric circuit.

  The wiring conductor 6 is formed in the form of a through conductor that penetrates the second insulating layer 3b in the thickness direction in the example of FIG. 1, but may be formed on the side surface of the second insulating layer 3b or the like. .

  The first and second insulating layers 3a and 3b are made of an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon nitride sintered body, a silicon carbide sintered body, and a glass ceramic sintered body. It is formed of an electrically insulating material such as a ceramic sintered body such as a bonded body, a resin such as an epoxy resin or a polyimide resin, or a composite material formed by bonding ceramic powder with a resin.

  The first and second insulating layers 3a and 3b are formed of the same material in order to ensure good productivity and reliability of bonding between them. For example, when the first and second insulating layers 3a and 3b are made of an aluminum oxide sintered body, they are manufactured as follows. First, an appropriate organic resin binder and solvent are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide to produce a slurry-like ceramic slurry. A plurality of square plate-like ceramic green sheets (ceramic green sheets, hereinafter also referred to as green sheets) are obtained by adopting a sheet forming technique such as the above. Thereafter, the green sheets are laminated in the predetermined order in a predetermined order to form a laminate. By firing this laminated body at a high temperature of about 1600 ° C. in a reducing atmosphere, an insulating layer made of the rectangular parallelepiped first and second insulating layers 3a and 3b is manufactured.

  The first insulating layer 3a and the semiconductor element 1 are joined through an electrically insulating joining material such as a resin adhesive or glass.

  The connection pad 4, the external connection pad 5, and the wiring conductor 6 are made of a metal material such as tungsten, molybdenum, copper, or silver. Such a metal material can be formed on the insulating layer in the form of a metallized conductor, metal foil, plating layer, etc. For example, when made of a tungsten metallized conductor, an organic solvent, a resin binder, etc. are added to the tungsten powder. The metal paste obtained by kneading is formed by printing a predetermined pattern on the surface of the green sheet to be the insulating layers 3a and 3b. In this case, in order to make the wiring conductor 6 a through conductor that penetrates the insulating layer 3b in the thickness direction as shown in FIG. 1, a through hole is punched and formed in the green sheet that becomes the insulating layer 3b in advance. The through-hole is formed by printing and filling a metal paste.

  In addition, the semiconductor device of the present invention includes the sealing resin 8 that covers the one main surface of the semiconductor element 1 by exposing the surface of the second insulating layer 3b where the external connection pads 5 are formed. The sealing resin 8 covers a part of one main surface of the semiconductor element 1 that is not covered with the insulating layer, covers one main surface of the semiconductor element 1, the electrode 1 a, the bonding wire 7, etc. It has a function of hermetically sealing.

  In this case, the sealing resin 8 exposes the external connection pads 5, and therefore does not hinder the connection of the external connection pads 5 to an external electric circuit via solder or the like, and the semiconductor device 9 The external connection can be made easy and reliable.

  Such a sealing resin 8 is made of a resin such as an epoxy resin or a silicone resin. For example, an uncured epoxy resin is formed on the one main surface of the semiconductor element 1 with the external connection pads 5 formed thereon. The main surface of the insulating layer 3b is applied so as to be exposed, and then heated and cured.

  Thus, when the semiconductor element 1 is sealed with the sealing resin 8, if the side surface of the sealing resin 8 protrudes outside the side surface of the semiconductor element 1, the semiconductor device 9 cannot be reduced in size. The sealing resin 8 is formed such that its side surface is located on the same plane as the side surface of the semiconductor element 1 or is located slightly inside so as not to expose the electrode 1a. When a large number of electrodes 1a are arranged, the sealing resin 8 has its side surface located on the same plane as the side surface of the semiconductor element 1 at the portion where the electrode 1a is formed. You may form so that it may enter inside in the site | part between the electrode 1a and the electrode 1a.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, a plated layer of nickel, copper, gold or the like is deposited on the exposed surface of the external connection pad 5 to strengthen the connection to the external electric circuit and effectively prevent oxidative corrosion. Good.

It is sectional drawing which shows an example of embodiment of the semiconductor device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Semiconductor element 1a ... Electrode 3a ... 1st insulating layer 3b ... 2nd insulating layer 4 ... Connection pad 5 ... External connection pad 6 ... Wiring conductor 7 ..Bonding wire 8 ... Resin for sealing 9 ... Wiring substrate

Claims (1)

On the other hand, a plate-like semiconductor element having an electrode formed on the outer peripheral portion of the main surface, and a first insulating layer laminated on the central portion of the one main surface of the semiconductor element and having a connection pad formed on the outer peripheral portion A second insulating layer laminated on the center of the first insulating layer and having an external connection pad formed on the surface; a bonding wire for electrically connecting the electrode and the connection pad; A semiconductor device comprising: a sealing resin that exposes a surface of the second insulating layer on which the external connection pads are formed and covers the one main surface.

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