JP2005141926A - Cold cathode field electron emission display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cold cathode field electron emission display device having such a structure that deterioration is hard to occur in a fluorescent material region even by use of long time. <P>SOLUTION: In the cold cathode electric field electron emission display device composed by joining a cathode panel CP and an anode panel at their peripheral parts, the cathode panel CP is constituted of a support, and an electron emission region arranged on the support in two-dimensional matrix state, the anode panel is constituted of a substrate, a phosphor area formed on the substrate, and an anode, and a magnetic field forming means 31 to 34 for periodically changing a position where an electron emitted from the electron emission region collides with the fluorescent material region arranged opposite to the electron emission region are arranged at the outer side circumferential part of the cold cathode field electron emission display device. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a cold cathode field emission display.

  In the field of display devices used in television receivers and information terminal equipment, the flat panel type (flat panel) that can meet the demands of thinner, lighter, larger screens and higher definition than the conventional mainstream cathode ray tube (CRT). Type) display devices are being considered. Examples of such a flat display device include a liquid crystal display (LCD), an electroluminescence display (ELD), a plasma display (PDP), and a cold cathode field emission display (FED: field emission display). Can do. Among these, liquid crystal display devices are widely used as display devices for information terminal equipment, but there are still problems in increasing brightness and size in order to apply them to stationary television receivers. . On the other hand, a cold cathode field emission display is a cold cathode field emission device (hereinafter, field emission) capable of emitting electrons from a solid into a vacuum based on the quantum tunnel effect without depending on thermal excitation. In some cases, it is called an element), and is attracting attention from the viewpoint of high luminance and low power consumption.

  A schematic partial end view of a conventional cold cathode field emission display using a field emission device is shown in FIG. 2, and a schematic partial view of a conventional cathode panel CP constituting the cold cathode field emission display is shown. A perspective view is shown in FIG. 3A, and a schematic partial sectional view of the electron emission region is shown in FIG. The field emission device shown in the figure is a type of field emission device called a Spindt type field emission device having a conical electron emission portion 15. The field emission device includes a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, a gate 14 A of 1st opening parts provided in the electrode 13, 2nd opening part 14B provided in the insulating layer 12, and connected to 14 A of 1st opening parts, The part of the cathode electrode 11 located in the bottom part of the 2nd opening part 14B It is comprised from the cone-shaped electron emission part 15 formed on the top. In general, the cathode electrode 11 and the gate electrode 13 are formed in stripes in a direction in which the projected images of these two electrodes are orthogonal to each other, and a region corresponding to a portion where the projected images of these two electrodes overlap ( In general, a plurality of field emission elements are provided in an area corresponding to one pixel, which is hereinafter referred to as an electron emission area EA. Further, such electron emission areas EA are usually arranged in a two-dimensional matrix within the effective area of the cathode panel CP (area that functions as an actual display screen).

  On the other hand, the anode panel AP is formed on the substrate 20 and the phosphor region 22 having a predetermined pattern (in the case of color display, the red light-emitting phosphor region 22R, the green light-emitting phosphor region 22G, the blue light-emitting phosphor). A body region 22B) and an anode electrode 24 that also functions as a reflective film formed thereon.

  One pixel (one subpixel) faces a group of field emission elements provided in a region (electron emission region EA) where the cathode electrode 11 and the gate electrode 13 on the cathode panel side overlap each other, and the electron emission region EA. And a phosphor region 22 on the anode panel side. In an effective area that is an area that functions as an actual display portion, such pixels are arranged in the order of several hundred thousand to several million, for example. A partition wall 21 is formed on the substrate 20 between the phosphor region 22 and the phosphor region 22. A light absorption layer (black matrix) 23 is formed on the substrate 20 between the phosphor region 22 and the phosphor region 22. Further, the spacer 25 is held by a spacer holding portion 26.

  The anode panel AP and the cathode panel CP are arranged so that the electron emission area EA and the phosphor area 22 are opposed to each other, and are bonded using an adhesive layer (not shown) made of a sintered frit glass body at the peripheral edge. Thus, a cold cathode field emission display can be manufactured. A through hole (not shown) for evacuation is provided in the ineffective area surrounding the effective area and formed with peripheral circuits for selecting pixels. The through hole is sealed after evacuation. A chip tube (not shown) is connected. That is, the space surrounded by the anode panel AP, the cathode panel CP, and the adhesive layer made of the frit glass fired body is in a high vacuum. Since pressure is applied to the anode panel AP and the cathode panel CP by the atmosphere, so-called spacers 25 are provided between the anode panel AP and the cathode panel CP so that the cold cathode field emission display device is not damaged by the pressure. Has been placed.

JP-A-8-179723 JP 2002-251163 A

  The cold cathode field emission display device has a unique problem that cannot be seen in the cathode ray tube. That is, in the cathode ray tube, an electron beam is scanned by a deflection coil or the like to form an image. Therefore, the electron beam does not always collide with the same position in the phosphor region constituting one pixel.

  On the other hand, in the cold cathode field emission display, a line sequential drive system is adopted. That is, for example, while applying a voltage to a certain gate electrode, a voltage is simultaneously applied to a number of cathode electrodes, and electrons from a plurality of electron emission regions, which are overlapping regions of the gate electrode and a number of cathode electrodes, are applied. Is controlled (that is, the light emission state of each pixel is controlled). Then, voltage is sequentially applied to the gate electrode. In the cold cathode field emission display, unlike the cathode ray tube, in the light emitter region where electrons emitted from a certain electron emission region collide, the light emitters emitted from this electron emission region collide. The position of the region portion (more specifically, the phosphor powder) is generally constant. Therefore, the deterioration of the phosphor powder with which the electrons always collide is remarkable compared to the other phosphor powders, and when the entire phosphor area is viewed, the deterioration of the phosphor area progresses faster than the cathode ray tube. Have.

  Such deterioration of the phosphor region leads to fluctuations in light emission color and light emission efficiency, contamination of components inside the cold cathode field emission display device, and consequently deterioration in reliability and lifetime characteristics of the cold cathode field emission display device. . Therefore, in order to improve the reliability and life characteristics of the cold cathode field emission display, there is a strong demand for less deterioration of each phosphor region as a whole.

  Incidentally, measures for preventing the deterioration and burn-in of the plasma display device and the image display device are disclosed in JP-A-8-179723 and JP-A-2002-251163. No mention is made of problems inherent in the cold cathode field emission display and means for solving them.

  Accordingly, an object of the present invention is to provide a cold cathode field emission display having a structure in which the phosphor region hardly deteriorates even when used for a long time.

The cold cathode field emission display device according to the first aspect of the present invention for achieving the above object is a cold cathode field emission display device in which a cathode panel and an anode panel are joined at their peripheral portions. There,
The cathode panel is composed of a support, and an electron emission region arranged in a two-dimensional matrix on the support,
The anode panel is composed of a substrate, a phosphor region formed on the substrate, and an anode electrode.
Magnetic field forming means for periodically changing the position at which the electrons emitted from the electron emission region collide with the phosphor region disposed opposite to the electron emission region is provided on the outer periphery of the cold cathode field emission display. It is arrange | positioned at the part, It is characterized by the above-mentioned.

  In the cold cathode field emission display according to the first aspect of the present invention, the magnetic field forming means is preferably composed of an electromagnet. More specifically, a first electromagnet is disposed at the outer upper end of the cold cathode field emission display, and a second electromagnet is disposed at the outer lower end of the cold cathode field emission display. A third electromagnet is disposed at the outer right end of the field electron emission display device, and a fourth electromagnet is disposed at the outer left end of the cold cathode field emission display device. Then, by operating the first electromagnet and the second electromagnet as a pair, a magnetic field in the vertical direction of the cold cathode field emission display is formed. As a result, the electrons emitted from the electron emission region are changed to cold cathode field electrons. The emission display device can be shaken (deflected or shaken) in the left-right direction. Further, by operating the third electromagnet and the fourth electromagnet as a pair, a magnetic field in the left-right direction of the cold cathode field emission display device is formed. As a result, electrons emitted from the electron emission region are converted into cold cathode field electrons. The emission display device can be shaken (deflected or shaken) in the vertical direction. In this way, the locus of movement of the central portion of the electron beam emitted from the electron emission region on the phosphor region can be, for example, a circle, an ellipse, a polygon including a rectangle, or a Lissajous curve without an end. Alternatively, only two of the first electromagnet and the second electromagnet may be arranged, or only two of the third electromagnet and the fourth electromagnet may be arranged. With such a configuration, the locus of movement of the central portion of the electron beam emitted from the electron emission region on the phosphor region is a linear reciprocating motion.

The cold cathode field emission display according to the second aspect of the present invention for achieving the above object is a cold cathode field emission display comprising a cathode panel and an anode panel joined at the peripheral edge thereof. There,
The cathode panel is composed of a support, and an electron emission region arranged in a two-dimensional matrix on the support,
The anode panel is composed of a substrate, a phosphor region formed on the substrate, and an anode electrode.
Electric field forming means for periodically changing the position at which the electrons emitted from the electron emission region collide with the phosphor region disposed opposite to the electron emission region are arranged at the periphery of each electron emission region. It is characterized by being.

In the cold cathode field emission display according to the first aspect of the present invention including the above preferred embodiment, or in the cold cathode field emission display according to the second aspect, each electron emission region includes:
(A) a striped cathode electrode formed on a support and extending in a first direction;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a striped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in the gate electrode and the insulating layer, and
(E) an electron emission portion located at the bottom of the opening,
A cold cathode field electron emission device (hereinafter, the cold cathode field electron emission device may be abbreviated as a field emission device). Here, each electron emission region may be composed of one or a plurality of electron emission portions. For convenience, such a form of the cold cathode field emission display according to the first aspect of the present invention may be referred to as a cold cathode field emission display according to the first aspect of the present invention.

  In this case, in the cold cathode field emission display according to the second aspect of the present invention, the electric field forming means is formed on the insulating layer located between the gate electrode and the gate electrode. It is possible to adopt a configuration comprising deflection electrodes formed in parallel with the direction of 2. For convenience, such a form of the cold cathode field emission display according to the second aspect of the present invention may be referred to as a cold cathode field emission display according to the second aspect of the present invention. By applying an appropriate voltage to the deflection electrode, a kind of electron lens is formed, and the electrons emitted from the electron emission region can be shaken (deflected or shaken) in the first direction. That is, with such a configuration, the locus of movement of the central portion of the electron beam emitted from the electron emission region on the phosphor region is a linear reciprocating motion.

  Here, in the cold cathode field emission display according to the aspect 2A of the present invention, the deflection electrode is composed of a pair of deflection electrodes arranged so as to sandwich one gate electrode, By varying the voltage applied to the deflection electrode, it is possible to control the deflection state of the electrons emitted from the electron emission region in the first direction.

  Alternatively, in the cold cathode field emission display according to the 2A aspect of the present invention, the deflection electrode is the (2m-1) th (where m is an integer. The same applies in the following description. ) Gate electrode and the 2m-th gate electrode and not between the 2m-th gate electrode and the (2m + 1) -th gate electrode, or conversely, (2m− 1) It may be formed between the 2m-th gate electrode and the (2m + 1) -th gate electrode without being formed between the 2nd gate electrode and the 2m-th gate electrode. . For example, the deflection electrode is formed between the (2m−1) th gate electrode and the 2mth gate electrode, and between the 2mth gate electrode and the (2m + 1) th gate electrode. When the structure is not formed, by applying an appropriate voltage to the deflection electrode, an electron emission region constituted by the (2m-1) th gate electrode and an electron emission region constituted by the second mth gate electrode The electrons emitted from each of these are swung (deflected) in a direction approaching or away from the deflection electrode.

Alternatively, in the cold cathode field emission display of the present invention, each electron emission region is
(A) a striped cathode electrode formed on a support and extending in a first direction;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a striped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an interlayer insulating layer formed on the insulating layer and the gate electrode;
(E) a focusing electrode formed on the interlayer insulating layer;
(F) a focusing electrode, an interlayer insulating layer, an opening provided in the gate electrode and the insulating layer, and
(G) an electron emission portion located at the bottom of the opening,
It can be set as the form comprised from the field emission element which consists of. For convenience, such a form of the cold cathode field emission display according to the first aspect of the present invention may be referred to as a cold cathode field emission display according to the first aspect of the present invention.

  In this case, in the cold cathode field emission display according to the second aspect of the present invention, the electric field forming means is formed on the interlayer insulating layer located between the focusing electrode and the focusing electrode. It can be made into the form which consists of the formed deflection | deviation electrode. Such a form may be referred to as a cold cathode field emission display according to the second aspect of the present invention for convenience. Alternatively, the electric field forming means may be formed of a deflection electrode formed above the focusing electrode. Such a form may be referred to as a cold cathode field emission display according to the 2C aspect of the present invention for convenience. In the cold cathode field emission display according to the 2C aspect of the present invention, the focusing electrode can be formed as a single sheet covering the effective area of the cold cathode field emission display, and the deflection electrode is It is formed on the focusing electrode via the second interlayer insulating layer. A kind of electron lens is formed by applying an appropriate voltage to these deflection electrodes.

  In the cold cathode field emission display according to the second aspect of the present invention, when the focusing electrode is formed in a single stripe shape parallel to the single cathode electrode extending in the first direction, Alternatively, when one stripe electrode is formed in parallel with one gate electrode extending in the second direction, the pair of deflection electrodes are arranged so as to sandwich the one convergence electrode. The deflection state of the electrons emitted from the electron emission region in the first direction or the second direction can be controlled by changing the voltage applied to the pair of deflection electrodes. . With such a configuration, the locus of movement of the central portion of the electron beam emitted from the electron emission region on the phosphor region is a linear reciprocating motion.

  Alternatively, in the cold cathode field emission display according to the 2B aspect of the present invention, one focusing electrode is provided in parallel to a plurality of (for example, two) adjacent gate electrodes extending in the second direction. In this case, the deflection electrode can be formed on the portion of the interlayer insulating layer between the stripe-shaped converging electrode extending in the second direction and the converging electrode. Alternatively, when the focusing electrode is formed in a single stripe shape parallel to a plurality of (for example, two) adjacent cathode electrodes extending in the first direction, the deflection electrode extends in the first direction. It can be configured to be formed on the portion of the interlayer insulating layer between the stripe-shaped converging electrode and the converging electrode. In these cases, by applying an appropriate voltage to the deflection electrode, electrons emitted from each of the electron emission regions are swung (deflected) in a direction approaching or away from the deflection electrode. That is, with such a configuration, the locus of movement of the central portion of the electron beam emitted from the electron emission region on the phosphor region is a linear reciprocating motion.

  Further, in the cold cathode field emission display according to the 2C aspect of the present invention, if the deflection electrode is arranged in parallel with the gate electrode, the electrons emitted from the electron emission region are swung in the first direction ( Can be deflected). Here, the deflection electrode is composed of a pair of deflection electrodes arranged so as to sandwich at least one gate electrode, and the voltage applied to the pair of deflection electrodes is made different so that it is emitted from the electron emission region. The deflection state of the electrons in the first direction can be controlled. Alternatively, in the cold cathode field emission display according to the 2C aspect of the present invention, the deflection electrode is formed between the (2m-1) th gate electrode and the second mth gate electrode. The configuration is not formed between the 2m-th gate electrode and the (2m + 1) -th gate electrode, or conversely, the (2m-1) -th gate electrode and the 2m-th gate electrode It is also possible to adopt a configuration in which the second m-th gate electrode and the (2m + 1) -th gate electrode are not formed above. For example, the deflection electrode is formed between the (2m−1) th gate electrode and the 2mth gate electrode, and between the 2mth gate electrode and the (2m + 1) th gate electrode. When an appropriate voltage is applied to the deflection electrode, an electron emission region constituted by the (2m-1) th gate electrode and a second mth gate electrode are formed. Electrons emitted from the respective electron emission regions are swung (deflected) in a direction approaching or away from the deflection electrode. That is, with such a configuration, the locus of movement of the central portion of the electron beam emitted from the electron emission region on the phosphor region is a linear reciprocating motion.

  Alternatively, in the cold cathode field emission display according to the 2C aspect of the present invention, if the deflection electrode is disposed in parallel with the cathode electrode, the electrons emitted from the electron emission region are swung in the second direction. (Deflect). Here, the deflecting electrode is composed of a pair of deflecting electrodes arranged so as to sandwich at least one cathode electrode, and the voltage applied to the pair of deflecting electrodes is made different so that the electrons are emitted from the electron emission region. The deflection state of the electrons in the second direction can be controlled. Alternatively, the deflection electrode is formed above the (2n-1) th (where n is an integer, the same applies to the following description) cathode electrode and the 2nth cathode electrode. A configuration not formed between the 2n-th cathode electrode and the (2n + 1) -th cathode electrode, or conversely, between the (2n-1) -th cathode electrode and the 2n-th cathode electrode. Instead of forming the upper part, it may be formed above the second nth cathode electrode and the (2n + 1) th cathode electrode. For example, the deflection electrode is formed between the (2n-1) th cathode electrode and the 2nth cathode electrode, and between the 2nth cathode electrode and the (2n + 1) th cathode electrode. Is formed by the electron emission region constituted by the (2n-1) th cathode electrode and the second nth cathode electrode by applying an appropriate voltage to the deflection electrode. Electrons emitted from the respective electron emission regions are swung (deflected) in a direction approaching or away from the deflection electrode. That is, with such a configuration, the locus of movement of the central portion of the electron beam emitted from the electron emission region on the phosphor region is a linear reciprocating motion.

  Alternatively, in the cold cathode field emission display according to the 2C aspect of the present invention, if the deflection electrode is disposed in parallel with the gate electrode and also in parallel with the cathode electrode, the electron emission region is removed. The emitted electrons can be shaken (deflected) in the first direction and the second direction. Here, the deflection electrode includes a pair of first deflection electrodes arranged so as to sandwich one cathode electrode, and a pair of second deflection electrodes arranged so as to sandwich one gate electrode. The voltage applied to the two pairs of deflection electrodes (a pair of first deflection electrodes and a pair of second deflection electrodes) different from each other is made different from each other. The deflection state in the first and second directions can be controlled. Alternatively, the first deflection electrode is formed between the (2n−1) th cathode electrode and the 2nth cathode electrode, and the second nth cathode electrode and the (2n + 1) th cathode are formed. The second n-th cathode is not formed above the electrode, or conversely, the second n-th cathode is not formed above the (2n-1) -th cathode electrode and the second n-th cathode electrode. The second deflection electrode is formed between the (2m-1) th gate electrode and the 2mth gate electrode, and is formed between the electrode and the (2n + 1) th cathode electrode. And not formed between the 2m-th gate electrode and the (2m + 1) -th gate electrode, or conversely, the (2m-1) -th gate electrode and the 2m-th gate electrode. Formed above the gate electrode of In it may be configured to be formed above between the and the 2m-th gate electrode first (2m + 1) -th gate electrode. By adopting such a configuration, the trajectory in which the central part of the electron beam emitted from the electron emission region moves on the phosphor region is, for example, a circle, an ellipse, a polygon including a rectangle, an endless Lissajous curve, and the like. can do. In these cases, a second interlayer insulating layer is formed between the first deflection electrode and the second deflection electrode.

  The cold cathode field emission display according to the first aspect or the second aspect of the present invention including the above various preferred embodiments (hereinafter collectively referred to as the cold cathode field emission display of the present invention). In some cases, the position at which the electrons emitted from the electron emission region collide with the phosphor region disposed opposite to the electron emission region is periodically changed. One hour can be illustrated. Further, as a change pattern of the strength of the magnetic field and the strength of the electric field, a linear change, a sinusoidal change, and a step-like change can be exemplified. Note that the amount of change in the position at which the electrons emitted from the electron emission region collide with the phosphor region disposed opposite to the electron emission region is a fluorescence amount along each axis of the phosphor region on the phosphor region. The amount of change in the range of 1/4 to 1/2 of the length of the body region can be exemplified.

In the cold cathode field emission display of the present invention, the cathode electrode is connected to the cathode electrode control circuit, the gate electrode is connected to the gate electrode control circuit, the anode electrode is connected to the anode electrode control circuit, and the focusing electrode is the focusing electrode Connected to the control circuit, the magnetic field forming means is connected to the magnetic field forming means control circuit, and the electric field forming means is connected to the electric field forming means control circuit. These control circuits can be constituted by known circuits. The output voltage V _A of the anode electrode control circuit is normally constant and can be set to, for example, 5 kilovolts to 10 kilovolts. A constant voltage of about 0 volt or a maximum of about -20 volts is applied to the focusing electrode from the focusing electrode control circuit. On the other hand, regarding the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode, for example,
(1) A method in which the voltage V _C applied to the cathode electrode is constant and the voltage V _G applied to the gate electrode is changed.
(2) A method of changing the voltage V _C applied to the cathode electrode and making the voltage V _G applied to the gate electrode constant,
(3) There is a method of changing the voltage V _C applied to the cathode electrode and changing the voltage V _G applied to the gate electrode.

  In the cold cathode field emission display device of the present invention, the electron emission regions are arranged on orthogonal grid-like points. Specifically, the first direction and the second direction are orthogonal to each other. (More specifically, the projection image of the cathode electrode and the projection image of the gate electrode are orthogonal to each other) is preferable from the viewpoint of simplifying the structure of the cold cathode field emission display. In addition, an electron emission region is configured by one or a plurality of electron emission portions provided or positioned in a region where the projection image of the cathode electrode and the projection image of the gate electrode overlap.

In the cold cathode field emission display device of the present invention, the substrate constituting the cathode panel and the substrate constituting the anode panel only have to be formed of an insulating member at least on the surface. Various glass substrates such as alkali glass substrate and quartz glass substrate, various glass substrates with an insulating film formed on the surface, quartz substrate, quartz substrate with an insulating film formed on the surface, semiconductor substrate with an insulating film formed on the surface From the viewpoint of reducing the manufacturing cost, it is preferable to use a glass substrate or a glass substrate having an insulating film formed on the surface. More specifically, the glass constituting the glass substrate includes high strain point glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), Examples thereof include stellite (2MgO · SiO ₂ ) and lead glass (Na ₂ O · PbO · SiO ₂ ).

As materials constituting the cathode electrode, the gate electrode, the deflection electrode, and the focusing electrode in the cathode panel constituting the cold cathode field emission display device of the present invention, tungsten (W), niobium (Nb), tantalum (Ta), titanium ( Ti), molybdenum (Mo), chromium (Cr), aluminum (Al), copper (Cu), gold (Au), silver (Ag), nickel (Ni), cobalt (Co), zirconium (Zr), iron ( Fe), platinum (Pt), and at least one metal selected from the group consisting of zinc (Zn); alloys or compounds containing these metal elements (eg, nitrides such as TiN, WSi ₂ , MoSi ₂ , TiSi) _2, TaSi silicide such as _2); carbon thin film such as a diamond; semiconductor such as silicon (Si) ITO (indium tin oxide), oxide Inn Um, it can be exemplified a conductive metal oxide such as zinc oxide.

  Examples of methods for forming a cathode electrode, a gate electrode, a deflection electrode, and a focusing electrode include vapor deposition methods such as an electron beam vapor deposition method and a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method, and an etching method; screen printing Plating method (electroplating method or electroless plating method); lift-off method; laser ablation method; sol-gel method. According to the screen printing method or the plating method, for example, a stripe-shaped cathode electrode or gate electrode, a stripe-shaped deflection electrode, or a convergence electrode can be directly formed. In the cold cathode field emission display according to the second aspect of the present invention, the gate electrode and the deflection electrode can be formed simultaneously by the same process. In the cold cathode field emission display according to the second aspect of the present invention, the focusing electrode and the deflection electrode can be formed simultaneously by the same process.

Insulating layer and the interlayer insulating layer, as the constituent material of the second interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ system such glass paste material SiN material; Insulating resin such as polyimide can be used alone or in appropriate combination. For forming the insulating layer, the interlayer insulating layer, and the second interlayer insulating layer, a known process such as a CVD method, a coating method, a sputtering method, or a screen printing method can be used.

In the cold cathode field emission display of the present invention, the field emission device may be any form of field emission device, for example,
(1) A Spindt-type field emission device in which a conical electron emission portion is provided on the cathode electrode located at the bottom of the opening (2) On the cathode electrode where the substantially planar electron emission portion is located at the bottom of the opening (3) A crown-shaped field emission device in which a crown-shaped electron emission portion is provided on a cathode electrode positioned at the bottom of the opening, and electrons are emitted from the crown-shaped portion of the electron emission portion. Element (4) Planar field emission element that emits electrons from the surface of a flat cathode electrode (5) Crater-type field emission element (6) that emits electrons from a large number of protrusions on the surface of the cathode electrode on which irregularities are formed An edge type field emission device that emits electrons from the edge portion of the cathode electrode can be exemplified.

As field emission devices, in addition to the various types described above, devices commonly referred to as surface conduction electron emission devices are also known, and can be applied to the cold cathode field emission display device of the present invention. In the surface conduction electron-emitting device, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide (PdO) on a glass substrate. ), And a thin film having a small area is formed in a matrix, and each thin film is composed of two thin film pieces. One thin film piece is connected to a row direction wiring, and the other thin film piece is connected to a column direction wiring. Yes. A gap of several nm is provided between one thin film piece and the other thin film piece. In the thin film selected by the row direction wiring and the column direction wiring, electrons are emitted from the thin film through the gap.

  In the Spindt-type field emission device, as a material constituting the electron emission portion, tungsten, tungsten alloy, molybdenum, molybdenum alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, chromium alloy, and And at least one material selected from the group consisting of silicon (polysilicon and amorphous silicon) containing impurities. The electron emission portion of the Spindt-type field emission device can be formed by, for example, a vacuum deposition method, a sputtering method, or a CVD method.

In the flat field emission device, it is preferable that the material constituting the electron emission portion is composed of a material having a work function Φ smaller than that of the material constituting the cathode electrode. What is necessary is just to determine based on the work function of the material which comprises a cathode electrode, the electric potential difference between a gate electrode and a cathode electrode, the magnitude | size of the emission electron current density requested | required, etc. As typical materials constituting the cathode electrode in the field emission device, tungsten (Φ = 4.55 eV), niobium (Φ = 4.02 to 4.87 eV), molybdenum (Φ = 4.53 to 4.95 eV), Examples include aluminum (Φ = 4.28 eV), copper (Φ = 4.6 eV), tantalum (Φ = 4.3 eV), chromium (Φ = 4.5 eV), and silicon (Φ = 4.9 eV). . The electron emission portion preferably has a work function Φ smaller than these materials, and the value is preferably approximately 3 eV or less. Such materials include carbon (Φ <1 eV), cesium (Φ = 2.14 eV), LaB ₆ (Φ = 2.66 to 2.76 eV), BaO (Φ = 1.6 to 2.7 eV), SrO (Φ = 1.25 to 1.6 eV), Y ₂ O ₃ (Φ = 2.0 eV), CaO (Φ = 1.6 to 1.86 eV), BaS (Φ = 2.05 eV), TiN (Φ = 2. 92 eV) and ZrN (Φ = 2.92 eV). More preferably, the electron emission portion is made of a material having a work function Φ of 2 eV or less. In addition, the material which comprises an electron emission part does not necessarily need to be provided with electroconductivity.

Alternatively, in the flat type field emission device, as a material constituting the electron emission portion, a material in which the secondary electron gain δ of the material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode is used. You may select suitably. That is, silver (Ag), aluminum (Al), gold (Au), cobalt (Co), copper (Cu), molybdenum (Mo), niobium (Nb), nickel (Ni), platinum (Pt), tantalum (Ta) ), Tungsten (W), zirconium (Zr) and other metals; silicon (Si), germanium (Ge) and other semiconductors; carbon and diamond, etc .; and aluminum oxide (Al ₂ O ₃ ), barium oxide (BaO) ), Beryllium oxide (BeO), calcium oxide (CaO), magnesium oxide (MgO), tin oxide (SnO ₂ ), barium fluoride (BaF ₂ ), calcium fluoride (CaF ₂ ), etc. You can choose. In addition, the material which comprises an electron emission part does not necessarily need to be provided with electroconductivity.

In the flat type field emission device, carbon, more specifically, diamond, graphite, carbon nanotube structure, ZnO whisker, MgO whisker, SnO ₂ whisker, MnO whisker, as a particularly preferable electron emission part constituent material, Mention may be made of Y ₂ O ₃ whiskers, NiO whiskers, ITO whiskers, In ₂ O ₃ whiskers, and Al ₂ O ₃ whiskers. When the electron emission portion is composed of these, the emission electron current density required for the cold cathode field emission display device can be obtained with an electric field intensity of 5 × 10 ⁷ V / m or less. Also, since diamond is an electrical resistor, the emitted electron current obtained from each electron-emitting portion can be made uniform, and therefore, variation in luminance when incorporated in a cold cathode field emission display can be suppressed. It becomes. Furthermore, since these materials have extremely high resistance to the sputtering effect by ions of residual gas in the cold cathode field emission display, the lifetime of the field emission device can be extended.

  Specific examples of the carbon nanotube structure include carbon nanotubes and / or graphite nanofibers. More specifically, the electron emission part may be composed of carbon nanotubes, the electron emission part may be composed of graphite nanofibers, or the electron emission is performed from a mixture of carbon nanotubes and graphite nanofibers. You may comprise a part. Macroscopically, carbon nanotubes and graphite nanofibers may be in the form of powder or thin film. In some cases, the carbon nanotube structure has a conical shape. It may be. Carbon nanotubes and graphite nanofibers are produced by various CVD methods such as the well-known arc discharge method and laser ablation method, such as PVD method, plasma CVD method, laser CVD method, thermal CVD method, vapor phase synthesis method, and vapor phase growth method. Can be manufactured and formed.

  A flat field emission device in which a carbon / nanotube structure and the above-mentioned various whiskers (hereinafter collectively referred to as a carbon / nanotube structure) are dispersed in a binder material is a desired region of the cathode electrode. For example, a method of firing or curing a binder material after coating (specifically, an organic binder material such as an epoxy resin or an acrylic resin, or an inorganic binder material such as water glass, a carbon nanotube structure Etc. can also be produced by, for example, applying to a desired region of the cathode electrode and then removing the solvent and baking / curing the binder material. Such a method is referred to as a first method for forming a carbon nanotube structure or the like. An example of the application method is a screen printing method.

Alternatively, the flat field emission device can be manufactured by a method in which a metal compound solution in which a carbon / nanotube structure or the like is dispersed is applied on the cathode electrode, and then the metal compound is baked. A carbon / nanotube structure or the like is fixed to the surface of the cathode electrode by a matrix containing metal atoms constituting the metal. Such a method is referred to as a second method for forming a carbon nanotube structure or the like. The matrix is preferably made of a conductive metal oxide, and more specifically, made of tin oxide, indium oxide, indium oxide-tin, zinc oxide, antimony oxide, or antimony oxide-tin. preferable. After firing, a state in which a part of each carbon / nanotube structure or the like is embedded in the matrix can be obtained, or a state in which each carbon / nanotube structure or the like is entirely embedded in the matrix can be obtained. The volume resistivity of the matrix is preferably 1 × 10 ⁻⁹ Ω · m to 5 × 10 ⁻⁶ Ω · m.

  As a metal compound which comprises a metal compound solution, an organic metal compound, an organic acid metal compound, or a metal salt (for example, chloride, nitrate, acetate) can be mentioned, for example. As an organic acid metal compound solution, an organic tin compound, an organic indium compound, an organic zinc compound, and an organic antimony compound are dissolved in an acid (for example, hydrochloric acid, nitric acid, or sulfuric acid), and this is dissolved in an organic solvent (for example, toluene, butyl acetate, And those diluted with isopropyl alcohol). Moreover, as an organometallic compound solution, what melt | dissolved the organic tin compound, the organic indium compound, the organic zinc compound, and the organic antimony compound in the organic solvent (For example, toluene, butyl acetate, isopropyl alcohol) can be illustrated. When the solution is 100 parts by weight, it is preferable to have a composition containing 0.001 to 20 parts by weight of the carbon / nanotube structure and 0.1 to 10 parts by weight of the metal compound. The solution may contain a dispersant or a surfactant. Further, from the viewpoint of increasing the thickness of the matrix, an additive such as carbon black may be added to the metal compound solution. Moreover, depending on the case, water can also be used as a solvent instead of an organic solvent.

  Examples of a method for applying a metal compound solution in which a carbon nanotube structure or the like is dispersed on a cathode electrode include a spray method, a spin coating method, a dipping method, a diquarter method, and a screen printing method. It is preferable to adopt the method from the viewpoint of easy application.

  After applying a metal compound solution in which carbon / nanotube structures are dispersed on the cathode electrode, the metal compound solution is dried to form a metal compound layer, and then unnecessary portions of the metal compound layer on the cathode electrode are removed. Thereafter, the metal compound may be fired, or after firing the metal compound, unnecessary portions on the cathode electrode may be removed, or the metal compound solution may be applied only on a desired region of the cathode electrode. Also good.

  The firing temperature of the metal compound is, for example, a temperature at which the metal salt is oxidized to form a conductive metal oxide, or an organic metal compound or an organic acid metal compound is decomposed to form an organic metal compound or an organic acid. Any temperature that can form a matrix (for example, a conductive metal oxide) containing metal atoms constituting the metal compound may be used. For example, the temperature is preferably 300 ° C. or higher. The upper limit of the firing temperature may be a temperature at which thermal damage or the like does not occur in the constituent elements of the field emission device or the cathode panel.

  In the first formation method or the second formation method of the carbon nanotube structure or the like, after the formation of the electron emission portion, a kind of activation treatment (cleaning treatment) of the surface of the electron emission portion is performed. This is preferable from the viewpoint of further improving the efficiency of electron emission from the electron emission portion. Examples of such treatment include plasma treatment in a gas atmosphere such as hydrogen gas, ammonia gas, helium gas, argon gas, neon gas, methane gas, ethylene gas, acetylene gas, and nitrogen gas.

  In the first formation method or the second formation method of the carbon nanotube structure or the like, the electron emission portion may be formed on the surface of the cathode electrode portion located at the bottom of the opening portion. It may be formed so as to extend from the portion of the cathode electrode located at the bottom of the portion to the surface of the portion of the cathode electrode other than the bottom of the opening. Further, the electron emission portion may be formed on the entire surface of the portion of the cathode electrode located at the bottom of the opening or may be formed partially.

  Although it depends on the structure of the field emission device, even if one electron emission portion exists in one opening provided in the gate electrode and the insulating layer (or the focusing electrode, the interlayer insulating layer, the gate electrode and the insulating layer). Alternatively, a plurality of electron emission portions may exist in one opening provided in the gate electrode and the insulating layer (or the convergence electrode, the interlayer insulating layer, the gate electrode, and the insulating layer), or a plurality of the electron emission portions may exist in the gate electrode. The opening may be provided, one opening communicating with the opening may be provided in the insulating layer, and one or a plurality of electron emitting portions may be present in the one opening provided in the insulating layer.

  In the cold cathode field emission display according to the first, second, or second C aspects of the present invention, the focusing electrode is provided with an opening for allowing electrons emitted from the electron emission region or the electron emission portion to pass therethrough. However, the opening may be provided for each electron emission portion or may be provided for each electron emission region.

  The planar shape of the opening (when the opening is cut in a virtual plane parallel to the support surface) is a circle, ellipse, rectangle, polygon, rounded rectangle, rounded polygon, etc. It can be of any shape. The opening can be formed by, for example, isotropic etching, a combination of anisotropic etching and isotropic etching, or, depending on the method of forming the gate electrode or convergence electrode, the gate electrode or convergence may be formed. An opening can also be formed directly in the electrode. The openings in the insulating layer and the interlayer insulating layer can also be formed by, for example, isotropic etching or a combination of anisotropic etching and isotropic etching.

A resistor layer may be provided between the cathode electrode and the electron emission portion. Alternatively, when the surface of the cathode electrode corresponds to an electron emission portion, the cathode electrode may have a three-layer configuration of a conductive material layer, a resistor layer, and an electron emission layer corresponding to the electron emission portion. By providing the resistor layer, it is possible to stabilize the operation of the field emission device and make the electron emission characteristics uniform. The material constituting the resistor layer is a carbon-based material such as silicon carbide (SiC) or SiCN; a SiN-based material; a semiconductor material such as amorphous silicon; or a high-melting-point metal oxide such as ruthenium oxide (RuO ₂ ), tantalum oxide, or tantalum nitride. Things can be exemplified. Examples of the method for forming the resistor layer include a sputtering method, a CVD method, and a screen printing method. The resistance value may be approximately 1 × 10 ⁵ to 1 × 10 ⁷ Ω, preferably several MΩ.

  In the anode panel, the portion where the electrons emitted from the electron emitting portion first collide is an anode electrode or a phosphor region, depending on the structure of the anode panel. The phosphor region may be composed of monochromatic phosphor particles or may be composed of three primary color phosphor particles.

  The planar shape (pattern) of the phosphor region may be a dot shape or a stripe shape corresponding to the pixel. When the phosphor region is formed between the barrier ribs, the phosphor region is formed on the portion of the substrate constituting the anode panel surrounded by the barrier ribs.

  The barrier ribs prevent electrons that have recoiled from the phosphor region or secondary electrons emitted from the phosphor region from entering other phosphor regions and causing so-called optical crosstalk (color turbidity). It has a function. Alternatively, when electrons recoiled from the phosphor region or secondary electrons emitted from the phosphor region enter the other phosphor region through the partition walls, these electrons are transferred to the other phosphor region. It has a function to prevent collision.

  Examples of the planar shape of the partition walls include a lattice shape (cross-beam shape), that is, a shape corresponding to one pixel, for example, a shape surrounding the four sides of a phosphor region having a substantially rectangular shape (dot shape). Examples thereof include a strip shape or a stripe shape extending in parallel with two opposite sides of the rectangular or stripe phosphor region. In the case where the partition walls have a lattice shape, a shape that continuously surrounds four sides of one phosphor region may be used, or a shape that discontinuously surrounds them. When the partition wall has a strip shape or a stripe shape, it may have a continuous shape or a discontinuous shape. After the partition wall is formed, the partition wall may be polished to flatten the top surface of the partition wall.

  In the cold cathode field emission display device of the present invention, since the space between the anode panel and the cathode panel is in a vacuum state, a spacer is disposed between the anode panel and the cathode panel. Otherwise, the cold cathode field emission display may be damaged by atmospheric pressure. The spacer can be made of ceramics, for example. When the spacer is made of ceramics, the ceramics include mullite, alumina, barium titanate, lead zirconate titanate, zirconia, cordiolite, borosilicate barium, iron silicate, glass ceramic materials, titanium oxide and chromium oxide. Examples thereof include iron oxide, vanadium oxide, and nickel oxide added. In this case, a spacer can be manufactured by forming a so-called green sheet, firing the green sheet, and cutting the fired green sheet. Further, a conductive material layer made of metal or alloy may be formed on the surface of the spacer, or a resistor layer may be formed, or a thin layer made of a material having a low secondary electron emission coefficient may be formed. . For example, the spacer may be fixed by being sandwiched between the partition walls, or alternatively, for example, a spacer holding portion may be formed on the anode panel and fixed by being sandwiched between the spacer holding portion and the spacer holding portion. Good.

  A light absorption layer that absorbs light from the phosphor region is preferably formed between the partition wall and the substrate from the viewpoint of improving the contrast of the display image. Here, the light absorption layer functions as a so-called black matrix. As a material constituting the light absorption layer, it is preferable to select a material that absorbs 99% or more of light from the phosphor region. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. For example, the light absorption layer is a combination of a vacuum vapor deposition method, a sputtering method and an etching method, a vacuum vapor deposition method, a sputtering method, a combination of a spin coating method and a lift-off method, a screen printing method, a lithography technique, etc. It can be formed by a method appropriately selected depending on the method. In the case where the spacer holding part and the partition wall are formed on the anode electrode, the light absorption layer may be formed between the substrate and the anode electrode, or may be formed between the anode electrode and the spacer holding part. Good.

  For the phosphor region, a luminescent crystal particle composition prepared from luminescent crystal particles (for example, phosphor particles having a particle size of about 5 to 10 nm) is used. For example, a red photosensitive luminescent crystal particle composition is used. (Red phosphor slurry) is applied to the entire surface, exposed and developed to form a red light emitting phosphor region, and then a green photosensitive luminescent crystal particle composition (green phosphor slurry) is applied to the entire surface. Then, it is exposed to light and developed to form a green light emitting phosphor region. Further, a blue photosensitive luminescent crystal particle composition (blue phosphor slurry) is coated on the entire surface, exposed to light and developed to emit blue light. It can be formed by a method of forming a phosphor region.

The phosphor material constituting the luminescent crystal particles can be appropriately selected from conventionally known phosphor materials. In the case of color display, a phosphor material whose color purity is close to the three primary colors specified by NTSC, white balance is achieved when the three primary colors are mixed, the afterglow time is short, and the afterglow time of the three primary colors is almost equal. It is preferable to combine them. As phosphor materials constituting the red light emitting phosphor region, (Y ₂ O ₃ : Eu), (Y ₂ O ₂ S: Eu), (Y ₃ Al ₅ O ₁₂ : Eu), (YBO ₃ : Eu), (YVO ₄ : Eu), (Y ₂ SiO ₅ : Eu), (Y _0.96 P _0.60 V _0.40 O ₄ : Eu _0.04 ), [(Y, Gd) BO ₃ : Eu], (GdBO ₃ : Eu), ( Examples are ScBO ₃ : Eu), (3.5MgO.0.5MgF ₂ .GeO ₂ : Mn), (Zn ₃ (PO ₄ ) ₂ : Mn), (LuBO ₃ : Eu), and (SnO ₂ : Eu). be able to. As phosphor materials constituting the green light emitting phosphor region, (ZnSiO ₂ : Mn), (BaAl ₁₂ O ₁₉ : Mn), (BaMg ₂ Al ₁₆ O ₂₇ : Mn), (MgGa ₂ O ₄ : Mn), ( YBO ₃ : Tb), (LuBO ₃ : Tb), (Sr ₄ Si ₃ O ₈ Cl ₄ : Eu), (ZnS: Cu, Al), (ZnS: Cu, Au, Al), (ZnBaO ₄ : Mn) , (GbBO ₃ : Tb), (Sr ₆ SiO ₃ Cl ₃ : Eu), (BaMgAl ₁₄ O ₂₃ : Mn), (ScBO ₃ : Tb), (Zn ₂ SiO ₄ : Mn), (ZnO: Zn), Examples thereof include (Gd ₂ O ₂ S: Tb) and (ZnGa ₂ O ₄ : Mn). As phosphor materials constituting the blue light emitting phosphor region, (Y ₂ SiO ₅ : Ce), (CaWO ₄ : Pb), CaWO ₄ , YP _0.85 V _0.15 O ₄ , (BaMgAl ₁₄ O ₂₃ : Eu), (Sr Examples thereof include ₂ P ₂ O ₇ : Eu), (Sr ₂ P ₂ O ₇ : Sn), (ZnS: Ag, Al), (ZnS: Ag), ZnMgO, and ZnGaO ₄ .

The constituent material of the anode electrode may be appropriately selected according to the configuration of the cold cathode field emission display. That is, the cold cathode field emission display is a transmission type (the anode panel corresponds to the display surface), and the anode electrode and the phosphor region are laminated in this order on the substrate constituting the anode panel. For this, the anode electrode itself needs to be transparent as well as the substrate, and a transparent conductive material such as ITO (indium tin oxide) is used. On the other hand, when the cold cathode field emission display device is of a reflective type (the cathode panel corresponds to the display surface), and even if it is a transmissive type, the phosphor region and the anode electrode are laminated in this order on the substrate. In this case, aluminum (Al) or chromium (Cr) can be used in addition to ITO. When the anode electrode is made of aluminum (Al) or chromium (Cr), the thickness of the anode electrode is specifically 3 × 10 ⁻⁸ m (30 nm) to 1.5 × 10 ⁻⁷ m (150 nm). Preferably, 5 × 10 ⁻⁸ m (50 nm) to 1 × 10 ⁻⁷ m (100 nm) can be exemplified. The anode electrode can be formed by vapor deposition or sputtering. In the latter case, the anode electrode functions as a reflection film that reflects light emitted from the phosphor region, and as a reflection film that reflects the electrons recoiled or emitted secondary electrons from the phosphor region. Functions and functions such as prevention of charging of the phosphor region.

  In the cold cathode field emission display device of the present invention, the anode electrode can be configured to have a single sheet-like shape covering the effective area, or from an aggregate of two or more anode electrode units. It can also be configured. The size of each anode electrode unit may be the same regardless of the position of the anode electrode unit, or may vary depending on the position of the anode electrode unit.

  As an example of the configuration of the anode electrode and the phosphor region, (1) a configuration in which the anode electrode is formed on the substrate and the phosphor region is formed on the anode electrode, and (2) a phosphor region is formed on the substrate. The structure which forms an anode electrode on a fluorescent substance area can be mentioned. In the configuration (1), a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor region. In the configuration (2), a metal back film may be formed on the anode electrode.

When the cathode panel and the anode panel are bonded at the peripheral edge, the bonding may be performed using an adhesive layer, or a frame made of an insulating rigid material such as glass or ceramics and an adhesive layer are used in combination. May be. When using a frame and an adhesive layer together, the opposing distance between the cathode panel and the anode panel is set longer than when only the adhesive layer is used by appropriately selecting the height of the frame. Is possible. As a constituent material of the adhesive layer, frit glass is generally used, but a so-called low melting point metal material having a melting point of about 120 to 400 ° C. may be used. Such low melting point metal materials include In (indium: melting point 157 ° C.); indium-gold based low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220-370 ° C.), Sn ₉₅ Cu ₅ (melting point 227-370 °). C) tin (Sn) type high temperature solder such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.), etc. Lead (Pb) high temperature solder; zinc (Zn) high temperature solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C.), Sn ₂ Pb ₉₈ (melting point 316 to 322) Tin-lead standard solder such as ° C); brazing material such as Au ₈₈ Ga ₁₂ (melting point 381 ° C) (the above subscripts all represent atomic%).

  When joining the three of the substrate, the support and the frame, the three-party simultaneous joining may be performed, or in the first stage, either the substrate or the support and the frame are joined first, In the second stage, the other of the substrate or the support and the frame may be joined. If the three-party simultaneous bonding or the bonding in the second stage is performed in a high vacuum atmosphere, the space surrounded by the substrate, the support, the frame, and the adhesive layer becomes a vacuum simultaneously with the bonding. Alternatively, after the three members are joined, the space surrounded by the substrate, the support, the frame, and the adhesive layer can be evacuated to create a vacuum. When exhausting after joining, the pressure of the atmosphere at the time of joining may be normal pressure / depressurized, and the gas constituting the atmosphere may be air, or nitrogen gas or group 0 of the periodic table An inert gas containing a gas belonging to (for example, Ar gas) may be used.

  When exhausting after joining, the exhausting can be performed through a tip tube connected in advance to the substrate and / or the support. The tip tube is typically composed of a glass tube, and a frit is formed around a through hole provided in an ineffective area (that is, an area other than the effective area functioning as a display portion) of the substrate and / or the support. It joins using glass or the above-mentioned low melting metal material, and after the space reaches a predetermined degree of vacuum, it is sealed off by heat fusion. In addition, if the entire cold cathode field emission display is once heated and then cooled before sealing, the residual gas can be released into the space, and the residual gas can be removed out of the space by exhaust. This is preferable.

  In the cold cathode field emission display device of the present invention, the position where the electrons emitted from the electron emission region collide with the phosphor region disposed opposite to the electron emission region is periodically changed. That is, it is possible to avoid collision of electrons at the same position in the phosphor region constituting one pixel. As a result, the entire phosphor region and further the phosphor powder constituting the phosphor region are unlikely to deteriorate. That is, in the cold cathode field emission display device of the present invention, deterioration and seizure of the cold cathode field emission display device can be reliably prevented. Therefore, it is possible to provide a cold cathode field emission display having high reliability and a long lifetime, which is less likely to cause variations in emission color and luminous efficiency and contamination of the components inside the cold cathode field emission display. . Further, when misalignment occurs during the assembly of the cathode panel and the anode panel, a kind of offset is added to the trajectory of the electron beam emitted from the electron emission region by the magnetic field forming means or the electric field forming means. Therefore, a cold cathode field emission display can be manufactured with a high yield.

  Hereinafter, a cold cathode field emission display device of the present invention (hereinafter sometimes simply referred to as a display device) will be described with reference to the drawings.

  Example 1 relates to the display device according to the first aspect of the present invention, and more specifically, relates to the display device according to the first aspect of the present invention.

  FIG. 1 shows a schematic view of the display device of Example 1 viewed from the cathode panel side, FIG. 2 shows a schematic partial end view of the display device, and FIG. 3 shows a schematic perspective view of a part of the cathode panel. FIG. 3B shows a schematic partial sectional view of the electron emission region shown in FIG. Furthermore, arrangement | sequences, such as a fluorescent substance area | region, are illustrated to FIGS. 4-7 as typical partial top view. Note that the arrangement of the phosphor regions and the like in the schematic partial end view of the anode panel AP has the configuration shown in FIG. 6 or FIG.

  The display device of Example 1 is formed by joining a cathode panel CP and an anode panel AP at their peripheral portions, and a space between the cathode panel CP and the anode panel AP is in a vacuum state. The cathode panel CP includes a support 10 and an electron emission region EA arranged in a two-dimensional matrix on the support. On the other hand, the anode panel AP includes the substrate 20 and the phosphor region 22 formed on the substrate 20 (in the case of color display, a red light-emitting phosphor region 22R, a green light-emitting phosphor region 22G, and a blue light-emitting phosphor region 22B). ) And an anode electrode 24 covering the phosphor region 22.

Here, each electron emission area EA is
(A) a striped cathode electrode 11 formed on the support 10 and extending in a first direction (a direction parallel to the paper surface of FIGS. 2 and 3B);
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a stripe-shaped gate electrode 13 formed on the insulating layer 12 and extending in a second direction different from the first direction (a direction perpendicular to the plane of FIG. 2 and FIG. 3B);
(D) the opening 14 provided in the gate electrode and the insulating layer (the opening 14A provided in the gate electrode 13 and the opening 14B provided in the insulating layer 12), and
(E) an electron emission portion 15 located at the bottom of the opening 14;
It is comprised from the field emission element which consists of.

  More specifically, the field emission device is a Spindt-type field emission device in which a conical electron emission portion 15 is provided on a portion of the cathode electrode 11 located at the bottom of the opening 14. The electron emission region EA is composed of a plurality of Spindt type field emission devices.

  More specifically, the anode panel AP is formed on the substrate 20 and the substrate 20 between the barrier ribs 21 formed on the substrate 20 and the barrier ribs 21, and a phosphor region 22 (red color) made of a large number of phosphor particles. A light emitting phosphor region 22R, a green light emitting phosphor region 22G, a blue light emitting phosphor region 22B), and an anode electrode 24 formed on the phosphor region 22. The anode electrode 24 is in the form of a thin sheet that covers the effective area, and is connected to the anode electrode control circuit 42. The anode electrode 24 is made of aluminum having a thickness of about 70 nm and is provided so as to cover the partition wall 21. A light absorption layer (black matrix) 23 is formed between the phosphor region 22 and the phosphor region 22 and between the partition wall 21 and the substrate 20. An example of the arrangement state of the partition wall 21, the spacer 25, and the phosphor region 22 is schematically shown in FIGS. In the example shown in FIGS. 4 and 5, lattice-shaped (cross-beam-shaped) partition walls 21 are formed, and phosphor regions 22 (a red light-emitting phosphor region 22R, a green light-emitting phosphor region 22G, and a blue light-emitting phosphor region). The shape of 22B) is a dot shape. On the other hand, in the example shown in FIGS. 6 and 7, the planar shape of the partition wall 21 has a strip shape (stripe shape) extending in parallel with two opposing sides of the substantially rectangular phosphor region 22. The phosphor region 22 may be formed in a stripe shape extending in the vertical direction in FIG. 4 or FIG.

  The projection image of the cathode electrode 11 and the projection image of the gate electrode 13 are orthogonal to each other. That is, the first direction and the second direction are orthogonal. In addition, an electron emission region EA is configured by a plurality of electron emission portions 15 provided in a region where the projection image of the cathode electrode 11 and the projection image of the gate electrode 13 overlap. As shown in a schematic partial perspective view of the cathode panel CP in FIG. 3A, an electron emission area EA corresponding to an area for one pixel is two-dimensionally within the effective area of the cathode panel CP. They are arranged in a matrix. One pixel is composed of an electron emission area EA on the cathode panel side and a phosphor area 22 on the anode panel side facing the electron emission area EA. In the effective area, such pixels are arranged on the order of hundreds of thousands to millions, for example.

  In the first embodiment, as shown in FIG. 1, in order to periodically change the position at which the electrons emitted from the electron emission area EA collide with the phosphor area 22 arranged to face the electron emission area EA. The magnetic field forming means is disposed on the outer periphery of the display device. Here, the magnetic field forming means comprises an electromagnet. More specifically, a first electromagnet 31 is disposed on the cathode panel side of the display device and on the outer upper end, and a second electromagnet 32 is disposed on the cathode panel side of the display device and on the outer lower end. The third electromagnet is disposed on the cathode panel side of the display device on the outer right end portion, and the fourth electromagnet 34 is disposed on the cathode panel side of the display device on the outer left end portion. These electromagnets are composed of an iron core disposed on the cathode panel CP in parallel with the peripheral edge of the display device, and a coil wound around the iron core in parallel with the peripheral edge of the display device. Then, by operating the first electromagnet 31 and the second electromagnet 32 in pairs, a magnetic field in the vertical direction of the display device is formed, and electrons emitted from the electron emission region EA are shaken in the horizontal direction of the display device ( Can be deflected or shaken). Further, by operating the third electromagnet 33 and the fourth electromagnet 34 in pairs, a horizontal magnetic field of the display device is formed, and electrons emitted from the electron emission region EA are shaken in the vertical direction of the display device ( Can be deflected or shaken). These electromagnets 31 to 34 are connected to a magnetic field forming means control circuit (not shown).

  The operation of the electromagnets 31 to 34 is controlled by the current from the magnetic field forming means control circuit, and the phosphor region 22 in which the electrons emitted from the electron emission region EA are arranged to face the electron emission region EA. The position where it collides with is periodically changed. Here, one cycle in the operation of the electromagnets 31 and 32 is, for example, 0.1 second to 1 hour, and one cycle in the operation of the electromagnets 33 and 34 is, for example, 0.1 second to 1 hour. In addition, the change pattern of the magnetic field strength was set to a change pattern in which the change in position is not known in a normal visual state. Furthermore, the amount of change in the position at which the electrons emitted from the electron emission area EA collide with the phosphor area 22 arranged to face the electron emission area EA is changed in the first direction on the phosphor area 22. Along the second direction, the amount of change in the range of ¼ to ½ of the length of the phosphor region 22, and a change in the range of ¼ to ½ of the length of the phosphor region 22 along the second direction The value of the current from the magnetic field forming means control circuit was controlled so as to be a quantity. In addition, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a polygon including a circle, an ellipse, a rectangle, or a Lissajous curve having no end.

In the display device of Example 1, as shown in FIG. 2, the cathode electrode 11 is connected to the cathode electrode control circuit 40, the gate electrode 13 is connected to the gate electrode control circuit 41, and the anode electrode 24 is connected to the anode electrode control circuit 42. It is connected to the. These control circuits can be constituted by known circuits. The output voltage V _A of the anode electrode control circuit is normally constant and can be set to, for example, 5 kilovolts to 10 kilovolts. On the other hand, regarding the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode,
(1) A method of changing the voltage V _G applied to the gate electrode while keeping the voltage V _C applied to the cathode electrode constant (2) A voltage V _G applied to the gate electrode by changing the voltage V _C applied to the cathode electrode (3) Any method of changing the voltage V _C applied to the cathode electrode and changing the voltage V _G applied to the gate electrode may be adopted.

  Hereinafter, a method for manufacturing a Spindt-type field emission device is shown in FIGS. 8A and 8B and FIGS. 9A and 9B, which are schematic partial end views of the support 10 and the like constituting the cathode panel. A description will be given with reference to B).

  This Spindt-type field emission device can be basically obtained by a method of forming the conical electron emission portion 15 by vertical vapor deposition of a metal material. That is, the vapor deposition particles are perpendicularly incident on the opening 14A provided in the gate electrode 13, but the insulating effect is obtained by utilizing the shielding effect by the overhanging deposit formed near the opening end of the opening 14A. The amount of vapor-deposited particles reaching the bottom of the opening 14B provided in the layer 12 is gradually reduced, and the electron-emitting portion 15 that is a conical deposit is formed in a self-aligning manner. Here, a method for forming the separation layer 16 in advance on the gate electrode 13 and the insulating layer 12 in order to facilitate removal of unnecessary overhanging deposits will be described. 8 and 9, only one electron emission portion is shown.

[Step-A0]
First, a cathode electrode conductive material layer made of, for example, polysilicon is formed on the support 10 made of, for example, a glass substrate by a plasma CVD method, and then the cathode electrode conductive material layer is formed based on a lithography technique and a dry etching technique. Are patterned to form a striped cathode electrode 11. Thereafter, an insulating layer 12 made of SiO _{2 is} formed on the entire surface by a CVD method.

[Step-A1]
Next, a gate electrode conductive material layer (for example, a TiN layer) is formed on the insulating layer 12 by a sputtering method, and then the gate electrode conductive material layer is patterned by a lithography technique and a dry etching technique. Thus, a stripe-shaped gate electrode 13 can be obtained. The striped cathode electrode 11 extends in the left-right direction in the drawing, and the striped gate electrode 13 extends in the direction perpendicular to the drawing.

  The gate electrode 13 is formed by a well-known thin film such as a PVD method such as a vacuum deposition method, a CVD method, a plating method such as an electroplating method or an electroless plating method, a screen printing method, a laser ablation method, a sol-gel method, a lift-off method. You may form by the combination of formation and an etching technique as needed. According to the screen printing method or the plating method, for example, a striped gate electrode can be directly formed.

[Step-A2]
Thereafter, a resist layer is formed again, an opening 14A is formed in the gate electrode 13 by etching, an opening 14B is formed in the insulating layer, and the cathode electrode 11 is exposed at the bottom of the opening 14B. Remove the layer. Thus, the structure shown in FIG. 8A can be obtained.

[Step-A3]
Next, nickel (Ni) is obliquely deposited on the insulating layer 12 including the gate electrode 13 while rotating the support 10, thereby forming a release layer 16 (see FIG. 8B). At this time, by selecting a sufficiently large incident angle of the vapor deposition particles with respect to the normal of the support 10 (for example, an incident angle of 65 to 85 degrees), the gate is hardly deposited on the bottom of the opening 14B. A peeling layer 16 can be formed on the electrode 13 and the insulating layer 12. The release layer 16 protrudes in a bowl shape from the opening end of the opening 14A, whereby the opening 14A is substantially reduced in diameter.

[Step-A4]
Next, for example, molybdenum (Mo) is vertically deposited as an electrically conductive material on the entire surface (incident angle: 3 to 10 degrees). At this time, as shown in FIG. 9A, as the conductive material layer 17 having an overhang shape grows on the release layer 16, the substantial diameter of the opening 14A is gradually reduced. The vapor deposition particles that contribute to the deposition at the bottom of the portion 14B are gradually limited to those that pass near the center of the opening 14A. As a result, a conical deposit is formed at the bottom of the opening 14 </ b> B, and this conical deposit becomes the electron emission portion 15.

[Step-A5]
Thereafter, as shown in FIG. 9B, the peeling layer 16 is peeled off from the surfaces of the gate electrode 13 and the insulating layer 12 by a lift-off method, and the conductive material layer 17 above the gate electrode 13 and the insulating layer 12 is selected. To remove. Thus, a cathode panel in which a plurality of Spindt type field emission devices are formed can be obtained. Thereafter, it is preferable to recede the side wall surface of the opening 14B provided in the insulating layer 12 by isotropic etching from the viewpoint of exposing the opening end of the gate electrode 13. The isotropic etching can be performed by dry etching using radicals as a main etching species, such as chemical dry etching, or wet etching using an etchant. As the etchant, for example, a 1: 100 (volume ratio) mixed solution of 49% hydrofluoric acid aqueous solution and pure water can be used. Thus, the field emission device shown in FIGS. 2 and 3B can be completed.

[Step-A6]
Next, the display device is assembled. Specifically, an anode panel AP in which a phosphor region is formed is prepared. For example, the spacer 25 is attached to the spacer holding portion 26 provided in the effective area of the anode panel AP, and the anode panel AP and the cathode panel CP are arranged so that the phosphor area 22 and the electron emission area EA face each other. The peripheral portion of the anode panel AP and the cathode panel CP (more specifically, the substrate 20 and the support 10) through a frame (not shown) made of ceramics or glass and having a height of about 2 mm. Join at. At the time of joining, frit glass is applied to the joining part between the frame and the anode panel AP and the joining part between the frame and the cathode panel CP, and the anode panel AP, the cathode panel CP, and the frame are pasted together. After the frit glass is dried by baking, main baking is performed at about 450 ° C. for 10 to 30 minutes. Thereafter, the space surrounded by the anode panel AP, the cathode panel CP, the frame, and the frit glass (not shown) is exhausted through a through hole (not shown) and a tip tube (not shown), and the pressure of the space When the ^pressure reaches about 10 ⁻⁴ Pa, the tip tube is sealed by heating and melting. In this way, the space surrounded by the anode panel AP, the cathode panel CP, and the frame can be evacuated. Alternatively, for example, the frame, the anode panel AP, and the cathode panel CP may be bonded together in a high vacuum atmosphere. Alternatively, depending on the structure of the display device, the anode panel AP and the cathode panel CP may be bonded together by using only an adhesive layer without a frame. Then, wiring connection with a necessary external circuit is performed, and the electromagnets 31 to 34 are arranged to complete the display device.

  In the first embodiment, the positions at which the electrons emitted from the electron emission area EA collide with the phosphor area 22 arranged to face the electron emission area EA are periodically changed by the electromagnets 31 to 34 serving as magnetic field forming means. Therefore, the phosphor region 22 and further the phosphor powder constituting the phosphor region are hardly deteriorated.

  Depending on circumstances, only two of the first electromagnet 31 and the second electromagnet 32 may be disposed, or only two of the third electromagnet 33 and the fourth electromagnet 34 may be disposed. . With such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion.

  Example 2 is a modification of Example 1 and relates to a display device according to the first aspect of the present invention. FIG. 10 shows a schematic partial cross-sectional view of the electron emission area EA that constitutes the display device of the second embodiment.

In Example 2, each electron emission area EA is
(A) a striped cathode electrode 11 formed on the support 10 and extending in the first direction;
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a stripe-shaped gate electrode 13 formed on the insulating layer 12 and extending in a second direction different from the first direction;
(D) an interlayer insulating layer 50 formed on the insulating layer 12 and the gate electrode 13;
(E) a focusing electrode 51 formed on the interlayer insulating layer 50;
(F) Opening 14 provided in focusing electrode 51, interlayer insulating layer 50, gate electrode 13 and insulating layer 12 (opening 14C provided in focusing electrode 51 and interlayer insulating layer 50, provided in gate electrode 13 An opening 14A, an opening 14B provided in the insulating layer 12, and
(G) an electron emission portion 15 located at the bottom of the opening 14;
It is comprised from the field emission element which consists of.

  In the second embodiment, the electron emission portion 15 has a conical shape. That is, a Spindt type field emission device is provided. The opening 14C provided in the convergence electrode 51 and the interlayer insulating layer 50 is provided so as to surround the electron emission region EA. The projection image of the cathode electrode 11 and the projection image of the gate electrode 13 are orthogonal to each other. That is, the first direction and the second direction are orthogonal. In addition, an electron emission region EA is configured by a plurality of electron emission portions 15 provided in a region where the projection image of the cathode electrode 11 and the projection image of the gate electrode 13 overlap. Here, in Example 2, the converging electrode 51 has a single sheet shape covering the effective area of the display device.

  On the other hand, the anode panel AP includes a substrate 20 and a phosphor region 22 and an anode electrode 24 formed on the substrate 20 and corresponding to each electron emission region EA. Here, the specific configuration of the anode panel AP can be the same as that of the anode panel AP described in the first embodiment, and thus detailed description thereof is omitted.

  In the Spindt-type field emission device of Example 2, for example, following [Step-A1] of Example 1, an interlayer insulating layer 50 is formed on the entire surface, and a conductive material layer is formed on the interlayer insulating layer 50. By patterning the conductive material layer, the converging electrode 51 is formed on the interlayer insulating layer 50, and then the opening 14C is formed in the converging electrode 51 and the interlayer insulating layer 50. Thereafter, [Step-A2 of Example 1] ] To [Step-A5] can be obtained, and then [Step-A6] of Example 1 can be executed to obtain the display device of Example 2.

  Example 3 relates to the display device according to the second aspect of the present invention, and more specifically, relates to the display device according to the second A aspect of the present invention.

  A schematic partial end view of the display device of Example 3 is shown in FIG. 11, a schematic partial sectional view of the electron emission region is shown in FIG. 12, and an arrangement state of the cathode electrode, the gate electrode, and the deflection electrode is shown. A schematic diagram is shown in FIG. In addition, illustration of the opening part was abbreviate | omitted in FIG.

  In the display device of Example 3, the cathode panel CP and the anode panel AP are joined at their peripheral portions, and the space sandwiched between the cathode panel CP and the anode panel AP is in a vacuum state. A plurality of spacers 25 are arranged between the cathode panel CP and the anode panel AP. The cathode panel CP includes a support 10 and an electron emission region EA arranged on the support 10 in a two-dimensional matrix. On the other hand, the anode panel AP includes a substrate 20, and a phosphor region 22 and an anode electrode 24 formed on the substrate 20. The specific configuration of the anode panel AP can be the same as that of the anode panel AP described in the first embodiment, and thus detailed description thereof is omitted.

Each electron emission area EA is similar to the first embodiment,
(A) a striped cathode electrode 11 formed on the support 10 and extending in a first direction (a direction parallel to the plane of FIG. 11 and FIG. 12);
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a stripe-shaped gate electrode 13 formed on the insulating layer 12 and extending in a second direction different from the first direction (a direction perpendicular to the plane of FIG. 11 and FIG. 12);
(D) the opening 14 provided in the gate electrode and the insulating layer (the opening 14A provided in the gate electrode 13 and the opening 14B provided in the insulating layer 12), and
(E) an electron emission portion 15 located at the bottom of the opening 14;
It is comprised from the field emission element which consists of.

  More specifically, in this field emission device, as in the first embodiment, the Spindt-type field emission in which the conical electron emission portion 15 is provided on the portion of the cathode electrode 11 located at the bottom of the opening portion 14. It is an element. The electron emission region EA is composed of a plurality of Spindt type field emission devices.

  As in the first embodiment, the projection image of the cathode electrode 11 and the projection image of the gate electrode 13 are orthogonal to each other. That is, the first direction and the second direction are orthogonal. In addition, an electron emission region EA is configured by a plurality of electron emission portions 15 provided in a region where the projection image of the cathode electrode 11 and the projection image of the gate electrode 13 overlap. Similarly to the schematic partial perspective view of the cathode panel CP shown in FIG. 3A, the electron emission area EA corresponding to the area for one pixel is within the effective area of the cathode panel CP. They are arranged in a dimensional matrix. One pixel is composed of an electron emission area EA on the cathode panel side and a phosphor area 22 on the anode panel side facing the electron emission area EA. In the effective area, such pixels are arranged on the order of hundreds of thousands to millions, for example.

  In Example 3, as shown in FIGS. 11, 12, and 13, the position where the electrons emitted from the electron emission region EA collide with the phosphor region 22 arranged to face the electron emission region EA. Electric field forming means for periodically changing is disposed in the periphery of each electron emission area EA. More specifically, this electric field forming means includes a deflection electrode 60. The deflection electrode 60 is formed on the portion of the insulating layer 12 positioned between the gate electrodes 13 and extends in parallel with the second direction, and is connected to an electric field forming means control circuit (not shown). Has been. For example, when the stripe-shaped gate electrode 13 is formed in [Step-A1] of the first embodiment, the deflection electrode 60 may be formed by the same process at the same time.

  Here, in Example 3, the deflection electrode 60 is formed between the (2m−1) th gate electrode 13A and the second mth gate electrode 13B, and the second mth gate electrode 13B The structure is not formed between the (2m + 1) th gate electrode 13A. In contrast to this, the second m-th gate electrode 13B and the (2m + 1) -th gate electrode 13B are not formed between the (2m-1) -th gate electrode 13A and the second m-th gate electrode 13B. The gate electrode 13A may be formed between the gate electrode 13A. Then, by applying an appropriate voltage to the deflection electrode 60, an electron emission area EA constituted by the (2m-1) th gate electrode 13A and an electron emission area EA constituted by the second m-th gate electrode 13B. Electrons emitted from each of these are swung (deflected or shaken) in a direction approaching or moving away from the deflection electrode 60.

In the display device of Example 3, as shown in FIG. 11, the cathode electrode 11 is connected to the cathode electrode control circuit 40, the gate electrode 13 is connected to the gate electrode control circuit 41, and the anode electrode 24 is connected to the anode electrode control circuit 42. The deflection electrode 60 is connected to a deflection electrode control circuit (not shown). Here, the spacer 25 is disposed between the gate electrode 13 and the gate electrode 13. These control circuits can be constituted by known circuits. The output voltage V _A of the anode electrode control circuit is normally constant and can be set to, for example, 5 kilovolts to 10 kilovolts. On the other hand, regarding the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode, any of the methods (1), (2), and (3) described in the first embodiment may be adopted. Good.

  In the third embodiment, the position at which the electrons emitted from the electron emission area EA collide with the phosphor area 22 arranged opposite to the electron emission area EA is periodically changed. For example, 0.1 second to 1 hour. In addition, the change pattern of the electric field strength is a change pattern in which the change in position is not known in a normal visual state. Further, the amount of change in the position at which the electrons emitted from the electron emission area EA collide with the phosphor area EA arranged to face the electron emission area EA is the length of the phosphor area 22 on the phosphor area 22. The value of the voltage applied to the deflection electrode 60 from the electric field forming means control circuit was controlled so that the amount of change was in the range of ¼ to ½. With such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion.

  In the third embodiment, the positions at which the electrons emitted from the electron emission area EA collide with the phosphor area 22 arranged to face the electron emission area EA are periodically changed by the deflection electrode 60 which is an electric field forming means. That is, by applying an appropriate voltage to the deflection electrode 60, a kind of electron lens is formed, and electrons emitted from the electron emission area EA are periodically shaken in the first direction (deflection). Therefore, the phosphor region 22 and further the phosphor powder constituting the phosphor region are unlikely to deteriorate.

  As shown in FIG. 14, a schematic diagram showing the arrangement state of the cathode electrode, the gate electrode, and the deflection electrode is constituted by a pair of deflection electrodes 61A and 61B arranged so as to sandwich one gate electrode 13 therebetween. The voltage applied to the pair of deflection electrodes 61A and 61B can be varied to control the deflection state of the electrons emitted from the electron emission region EA in the first direction. In addition, illustration of the opening part was abbreviate | omitted in FIG.

  Example 4 is a modification of Example 3 and relates to a display device according to the second aspect of the present invention. FIG. 15 shows a schematic partial cross-sectional view of the electron emission area EA constituting the display device of Example 4. As shown in FIG.

In Example 4, each electron emission area EA is similar to Example 2,
(A) a striped cathode electrode 11 formed on the support 10 and extending in a first direction (a direction parallel to the paper surface of FIG. 15);
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a stripe-shaped gate electrode 13 formed on the insulating layer 12 and extending in a second direction different from the first direction;
(D) an interlayer insulating layer 50 formed on the insulating layer 12 and the gate electrode 13;
(E) a focusing electrode 52 formed on the interlayer insulating layer 50;
(F) Opening 14 provided in focusing electrode 52, interlayer insulating layer 50, gate electrode 13 and insulating layer 12 (opening 14C provided in focusing electrode 52 and interlayer insulating layer 50, provided in gate electrode 13) An opening 14A, an opening 14B provided in the insulating layer 12, and
(G) an electron emission portion 15 located at the bottom of the opening 14;
It is comprised from the field emission element which consists of.

  In the fourth embodiment, the electron emission portion 15 is conical. That is, a Spindt type field emission device is provided. The opening 14C provided in the focusing electrode 52 and the interlayer insulating layer 50 is provided so as to surround the electron emission region EA. The projection image of the cathode electrode 11 and the projection image of the gate electrode 13 are orthogonal to each other. That is, the first direction and the second direction are orthogonal. In addition, an electron emission region EA is configured by a plurality of electron emission portions 15 provided in a region where the projection image of the cathode electrode 11 and the projection image of the gate electrode 13 overlap.

  On the other hand, the anode panel AP includes a substrate 20 and a phosphor region 22 and an anode electrode 24 formed on the substrate 20 and corresponding to each electron emission region EA. Here, the specific configuration of the anode panel AP can be the same as that of the anode panel AP described in the first embodiment, and thus detailed description thereof is omitted.

  In the fourth embodiment, the focusing electrode 52 has a single stripe shape parallel to the two adjacent gate electrodes 13A and 13B extending in the second direction. The electric field forming means is formed on a portion of the interlayer insulating layer 50 located between the stripe-shaped converging electrode 52 extending in the second direction and parallel to the stripe-shaped converging electrode 52. It consists of an extending deflection electrode 62. By applying an appropriate voltage to the deflection electrode 62 from an electric field forming means control circuit (not shown), electrons emitted from each of the electron emission regions EA are swung in a direction toward or away from the deflection electrode 62 ( Deflected or shaken). That is, with such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion. For example, following the [Step-A1] in the first embodiment, the deflection electrode 62 is formed by forming the interlayer insulating layer 50 on the entire surface, forming a conductive material layer on the interlayer insulating layer 50, and then patterning the conductive material layer. Thus, when the focusing electrode 52 is formed on the interlayer insulating layer 50, it may be formed by the same process at the same time. Then, after that, the opening 14C is formed in the focusing electrode 52 and the interlayer insulating layer 50, and further, [Step-A2] to [Step-A5] of Example 1 may be performed. The display device of Example 4 can be obtained by executing [Step-A6].

  When the focusing electrode is formed in one stripe shape parallel to two adjacent cathode electrodes extending in the first direction, the deflection electrode is formed of a stripe focusing electrode extending in the first direction. It is formed on the part of the interlayer insulating layer between the focusing electrodes and can be configured to extend in parallel with the stripe-shaped focusing electrodes. Alternatively, when the focusing electrode is formed in a single stripe shape parallel to one cathode electrode extending in the first direction, or alternatively to one gate electrode extending in the second direction. When formed in the form of a single stripe in parallel, the deflection electrode is composed of a pair of deflection electrodes arranged so as to sandwich such one converging electrode, and the voltage applied to the pair of deflection electrodes is By making them different, it is possible to control the deflection state of the electrons emitted from the electron emission region in the first direction or the second direction. With such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion. The converging electrode 53 is formed in a single stripe shape parallel to the one gate electrode 13 extending in the second direction, and the deflection electrode is sandwiched between the converging electrodes 53. FIG. 16 shows a schematic partial cross-sectional view of an electron emission region of an example constituted by a pair of deflection electrodes 63A and 63B arranged on the substrate.

  Example 5 is also a modification of Example 3 and relates to a display device according to the 2C aspect of the present invention. FIG. 17 shows a schematic partial cross-sectional view of the electron emission area EA constituting the display device of Example 5.

  In the fifth embodiment, each electron emission area EA has the same configuration as that of the second or fourth embodiment, and the anode panel AP can be the same as the anode panel AP described in the first embodiment. Detailed description thereof will be omitted. The focusing electrode 54 has a single sheet shape that covers the effective area of the display device, as in the second embodiment.

  The electric field forming means in the fifth embodiment is composed of the deflection electrode 64. The deflecting electrode 64 is formed above the converging electrode 54 via the second interlayer insulating layer 50A, is disposed in parallel with the gate electrode 13, and has a stripe shape. More specifically, the deflection electrode 64 is formed between the (2m−1) th gate electrode 13A and the second mth gate electrode 13B, and the second mth gate electrode 13B and the (2m + 1) th (2m + 1) th gate electrode 13B. ) The gate electrode 13A is not formed above the first gate electrode 13A. With such a configuration, when an appropriate voltage is applied to the deflection electrode 64, the electron emission region EA configured by the (2m-1) th gate electrode 13A and the second mth gate electrode 13B are configured. The electrons emitted from each of the emitted electron emission regions EA are shaken (deflected or shaken) in a direction approaching or moving away from the deflection electrode 64. That is, with such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion. The deflection electrode 64 and the second interlayer insulating layer 50A are provided with an opening 14D communicating with the opening 14C. On the other hand, the deflection electrode 64 is not formed above the (2m-1) th gate electrode 13A and the second mth gate electrode 13B, but the second mth gate electrode. A configuration may be employed in which the gate electrode 13B is formed above 13B and the (2m + 1) th gate electrode 13A.

  As a first modification of the fifth embodiment, a pair of deflection electrodes 65A, in which a deflection electrode is disposed in parallel with the gate electrode 13 and the deflection electrode is disposed so as to sandwich one gate electrode 13 therebetween. An example composed of 65B can be given (see FIG. 18). In this case, it is possible to control the deflection state of the electrons emitted from the electron emission region EA in the first direction by changing the voltages applied to the pair of deflection electrodes 65A and 65B. That is, with such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion.

  As a second modification of the fifth embodiment, the deflection electrode is arranged in parallel with the cathode electrode, and the deflection electrode is composed of a pair of deflection electrodes arranged so as to sandwich at least one cathode electrode. Can be mentioned. In this case, it is possible to control the deflection state of the electrons emitted from the electron emission region in the second direction by changing the voltages applied to the pair of deflection electrodes. That is, with such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion.

  As a third modification of the fifth embodiment, the deflection electrode is disposed in parallel with the cathode electrode, and the deflection electrode is disposed between the (2n-1) th cathode electrode and the second nth cathode electrode. A structure formed above and not formed between the 2nth cathode electrode and the (2n + 1) th cathode electrode, or conversely, the (2n-1) th cathode electrode and the 2nth cathode electrode There can be mentioned an example in which it is not formed above the cathode electrode but formed above the 2nth cathode electrode and the (2n + 1) th cathode electrode. For example, the deflection electrode is formed between the (2n-1) th cathode electrode and the 2nth cathode electrode, and between the 2nth cathode electrode and the (2n + 1) th cathode electrode. Is formed by the electron emission region constituted by the (2n-1) th cathode electrode and the second nth cathode electrode by applying an appropriate voltage to the deflection electrode. Electrons emitted from the respective electron emission regions are swung (deflected or shaken) in a direction approaching or away from the deflection electrode. That is, with such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 is a linear reciprocating motion.

  As a fourth modified example of the fifth embodiment, an example in which the deflection electrode is disposed in parallel with the gate electrode and also in parallel with the cathode electrode can be given, whereby the electron emission region EA emits light. The emitted electrons can be shaken (deflected) in the first direction and the second direction. With such a configuration, the trajectory in which the central portion of the electron beam emitted from the electron emission area EA moves on the phosphor area 22 can be represented by, for example, a polygon including a circle, an ellipse, or a rectangle, or an endless Lissajous. It can be a curve.

  Here, the deflection electrode includes a pair of first deflection electrodes arranged so as to sandwich one cathode electrode, and a pair of second deflection electrodes arranged so as to sandwich one gate electrode. The voltage applied to the two pairs of deflection electrodes (a pair of first deflection electrodes and a pair of second deflection electrodes) different from each other is made different from each other. The deflection state in the first and second directions can be controlled. Alternatively, the first deflection electrode is formed between the (2n−1) th cathode electrode and the 2nth cathode electrode, and the second nth cathode electrode and the (2n + 1) th cathode are formed. The second n-th cathode is not formed above the electrode, or conversely, the second n-th cathode is not formed above the (2n-1) -th cathode electrode and the second n-th cathode electrode. The second deflection electrode is formed between the (2m-1) th gate electrode and the 2mth gate electrode, and is formed between the electrode and the (2n + 1) th cathode electrode. And not formed between the 2m-th gate electrode and the (2m + 1) -th gate electrode, or conversely, the (2m-1) -th gate electrode and the 2m-th gate electrode. Formed above the gate electrode of In it may be configured to be formed above between the and the 2m-th gate electrode first (2m + 1) -th gate electrode. In these configurations, for example, the first deflection electrode is formed on the second interlayer insulating layer, and the second deflection electrode is formed on the first deflection electrode and the second interlayer insulating layer. It is formed on the formed third interlayer insulating layer. Alternatively, the second deflection electrode is formed on the second interlayer insulating layer, and the first deflection electrode is a third interlayer insulating layer formed on the second deflection electrode and the second interlayer insulating layer. Formed on top.

  As mentioned above, although this invention was demonstrated based on the Example, this invention is not limited to these. The configurations and structures of the anode panel, the cathode panel, the display device, and the field emission device described in the embodiments are exemplifications, and can be appropriately changed. Can be changed. Furthermore, the various materials used are also examples, and can be changed as appropriate. The display device has been described by taking color display as an example, but it may also be a single color display. Although the Spindt-type field emission device is exemplified as the field emission device, the field emission device is not limited to this, and various field emission devices described above can be used.

  In the display devices according to the third to fifth embodiments, the voltage applied to the deflection electrode is constant regardless of the position of the deflection electrode in the display device. It may be changed depending on the position of the electrode. In this way, when a misalignment occurs between a certain part of the cathode panel and the part of the anode panel facing this part, the electron emission region is caused by the deflection electrode in the electron emission region belonging to the part. It is possible to add a kind of offset to the trajectory of the electron beam emitted from the cathode, and it is possible to manufacture a cold cathode field emission display with a high yield. In the case of adopting such a configuration, it is necessary to be able to control the voltage applied to each deflection electrode (or each of a set of a plurality of deflection electrodes). In addition, when an overall misalignment occurs during the assembly of the cathode panel and the anode panel, the entire electron emission region is emitted from the electron emission region by the magnetic field formation unit or the electric field formation unit. A kind of offset can be added to the trajectory of the electron beam, and a cold cathode field emission display can be manufactured with a high yield.

  In the field emission device, a mode in which one electron emission portion corresponds to one opening has been described. However, depending on the structure of the field emission device, a mode in which a plurality of electron emission portions correspond to one opening. Alternatively, one electron emission portion may correspond to a plurality of openings. Alternatively, a plurality of openings may be provided in the gate electrode, a plurality of openings connected to the plurality of openings in the insulating layer, and one or a plurality of electron emission portions may be provided.

  The gate electrode may be a gate electrode of a type in which the effective area is covered with a sheet of conductive material (having an opening). In this case, a positive voltage is applied to the gate electrode. Then, a switching element made of, for example, a TFT is provided between the cathode electrode and the cathode electrode control circuit constituting each pixel, and the application state to the electron emission portion constituting each pixel is controlled by the operation of the switching element. Then, the light emission state of the pixel is controlled.

  Alternatively, the cathode electrode can be a cathode electrode of a type in which the effective area is covered with a sheet of conductive material. In this case, a voltage is applied to the cathode electrode. Then, a switching element made of, for example, a TFT is provided between the electron emission portion constituting each pixel and the gate electrode control circuit, and the application state to the gate electrode constituting each pixel is controlled by the operation of the switching element. Then, the light emission state of the pixel is controlled.

  As described in the embodiments, the anode electrode may be an anode electrode of a type in which an effective area is covered with a sheet-like conductive material, or one or a plurality of electron emission portions or one or a plurality of pixels. The anode electrode may be of a type in which anode electrode units corresponding to the above are assembled. When the anode electrode has the former configuration, the anode electrode may be connected to the anode electrode control circuit. When the anode electrode has the latter configuration, for example, each anode electrode unit may be connected to the anode electrode control circuit.

FIG. 1 is a schematic view of the cold cathode field emission display device of Example 1 as viewed from the cathode panel side. FIG. 2 is a schematic partial end view of Example 1 and a conventional cold cathode field emission display. 3A is a schematic perspective view of a part of the cathode panel constituting the cold cathode field emission display according to the first embodiment and FIG. 3B is a schematic view of the electron emission region. FIG. FIG. 4 is a layout diagram schematically showing the layout of the barrier ribs, spacers, and phosphor regions in the anode panel constituting the cold cathode field emission display. FIG. 5 is a layout diagram schematically showing the layout of the barrier ribs, spacers, and phosphor regions in the anode panel constituting the cold cathode field emission display. FIG. 6 is a layout diagram schematically showing the layout of barrier ribs, spacers and phosphor regions in an anode panel constituting a cold cathode field emission display. FIG. 7 is a layout diagram schematically showing the layout of the barrier ribs, spacers, and phosphor regions in the anode panel constituting the cold cathode field emission display. FIGS. 8A and 8B are schematic partial end views of a support and the like for explaining the manufacturing method of the Spindt-type cold cathode field emission device in Example 1. FIG. FIGS. 9A and 9B are schematic partial views of a support and the like for explaining the manufacturing method of the Spindt-type cold cathode field emission device in Example 1 following FIG. 8B. It is an end view. FIG. 10 is a schematic partial cross-sectional view of an electron emission region in a cathode panel constituting the cold cathode field emission display according to the second embodiment. FIG. 11 is a schematic partial end view of the cold cathode field emission display according to the third embodiment. FIG. 12 is a schematic partial cross-sectional view of an electron emission region constituting the cold cathode field emission display according to the third embodiment. FIG. 13 is a schematic diagram showing an arrangement state of the cathode electrode, the gate electrode, and the deflection electrode in the cathode panel constituting the cold cathode field emission display device of Example 3. FIG. 14 is a schematic diagram illustrating an arrangement state of the cathode electrode, the gate electrode, and the deflection electrode in the cathode panel constituting a modification of the cold cathode field emission display according to the third embodiment. FIG. 15 is a schematic partial cross-sectional view of an electron emission region in a cathode panel constituting the cold cathode field emission display of Example 4. FIG. 16 is a schematic partial sectional view of an electron emission region in a cathode panel constituting a modification of the cold cathode field emission display according to the fourth embodiment. FIG. 17 is a schematic partial cross-sectional view of an electron emission region in a cathode panel constituting the cold cathode field emission display according to the fifth embodiment. FIG. 18 is a schematic partial cross-sectional view of an electron emission region in a cathode panel constituting a first modification of the cold cathode field emission display according to the fifth embodiment.

Explanation of symbols

CP ... cathode panel, AP ... anode panel, EA ... electron emission region, 10 ... support, 11 ... cathode electrode, 12 ... insulating layer, 13 ... gate electrode, 14, 14A, 14B, 14C, 14D ... opening, 15 ... electron emission part, 16 ... release layer, 17 ... conductive material layer, 20 ... substrate, 21 ... partition, 22, 22R, 22G, 22B ... phosphor region, 23 ... light absorption layer (black matrix), 24 ... anode electrode, 25 ... spacer, 26 ... spacer holding part, 31, 32 , 33, 34 ... electromagnet, 40 ... cathode electrode control circuit, 41 ... gate electrode control circuit, 42 ... anode electrode control circuit, 50 ... interlayer insulation layer, 50A ... second Interlayer insulation layers 51, 52, 53, 54 · The focus electrode, 60,61A, 61B, 62,63A, 63B, 64,65A, 65B ··· deflection electrode

Claims (8)

A cold cathode field emission display device in which a cathode panel and an anode panel are joined at the periphery thereof,
The cathode panel is composed of a support, and an electron emission region arranged in a two-dimensional matrix on the support,
The anode panel is composed of a substrate, a phosphor region formed on the substrate, and an anode electrode.
Magnetic field forming means for periodically changing the position at which the electrons emitted from the electron emission region collide with the phosphor region disposed opposite to the electron emission region is provided on the outer periphery of the cold cathode field emission display. A cold cathode field emission display device, characterized in that it is disposed in a portion. Each electron emission region is
(A) a striped cathode electrode formed on a support and extending in a first direction;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a striped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in the gate electrode and the insulating layer, and
(E) an electron emission portion located at the bottom of the opening,
2. The cold cathode field emission display device according to claim 1, comprising a cold cathode field electron emission device comprising: Each electron emission region is
(A) a striped cathode electrode formed on a support and extending in a first direction;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a striped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an interlayer insulating layer formed on the insulating layer and the gate electrode;
(E) a focusing electrode formed on the interlayer insulating layer;
(F) a focusing electrode, an interlayer insulating layer, an opening provided in the gate electrode and the insulating layer, and
(G) an electron emission portion located at the bottom of the opening,
2. The cold cathode field emission display device according to claim 1, comprising a cold cathode field electron emission device comprising: 2. The cold cathode field emission display according to claim 1, wherein the magnetic field forming means comprises an electromagnet. A cold cathode field emission display device in which a cathode panel and an anode panel are joined at the periphery thereof,
The cathode panel is composed of a support, and an electron emission region arranged in a two-dimensional matrix on the support,
The anode panel is composed of a substrate, a phosphor region formed on the substrate, and an anode electrode.
Electric field forming means for periodically changing the position at which the electrons emitted from the electron emission region collide with the phosphor region disposed opposite to the electron emission region are arranged at the periphery of each electron emission region. A cold cathode field emission display device. Each electron emission region is
(A) a striped cathode electrode formed on a support and extending in a first direction;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a striped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in the gate electrode and the insulating layer, and
(E) an electron emission portion located at the bottom of the opening,
A cold cathode field emission device comprising:
6. The cold cathode according to claim 5, wherein the electric field forming means comprises a deflection electrode formed in parallel with the second direction on the portion of the insulating layer located between the gate electrodes. Field electron emission display. Each electron emission region is
(A) a striped cathode electrode formed on a support and extending in a first direction;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a striped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an interlayer insulating layer formed on the insulating layer and the gate electrode;
(E) a focusing electrode formed on the interlayer insulating layer;
(F) a focusing electrode, an interlayer insulating layer, an opening provided in the gate electrode and the insulating layer, and
(G) an electron emission portion located at the bottom of the opening,
A cold cathode field emission device comprising:
6. The cold cathode field emission display according to claim 5, wherein the electric field forming means comprises a deflection electrode formed on a portion of the interlayer insulating layer located between the focusing electrodes. Each electron emission region is
(A) a striped cathode electrode formed on a support and extending in a first direction;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a striped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an interlayer insulating layer formed on the insulating layer and the gate electrode;
(E) a focusing electrode formed on the interlayer insulating layer;
(F) a focusing electrode, an interlayer insulating layer, an opening provided in the gate electrode and the insulating layer, and
(G) an electron emission portion located at the bottom of the opening,
A cold cathode field emission device comprising:
6. The cold cathode field emission display according to claim 5, wherein the electric field forming means comprises a deflection electrode formed above the focusing electrode.

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