JP2005129562A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inhibit a short circuit between patterns even when the miniaturization of the patterns of a titanium silicide film progresses. <P>SOLUTION: An element isolation oxide film 19 and a gate electrode 14 are formed to a silicon substrate 10. A side wall material 16 is formed on the side wall of the gate electrode 14, and an impurity layer 18 is formed on the substrate 10. Titanium films 11 are formed so as to coat the oxide film 19, the gate electrode 14, the side wall material 16 and the layer 18. The titanium silicide film 13 having a C49 phase is formed by a heat treatment. Oxide layers 20 are formed to sections superposed to each of the oxide film 19 and the side wall material 16 in the surfaces of the titanium films 11. The film 13 is phase-changed from the C49 phase to a C54 phase by the heat treatment at a high temperature together with the film 13 having the C49 phase and the films 11. The films 11 are reacted with the oxide layers 20, and changed into titanium oxide films 22. The films 22 and the layers 20 are removed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device, and more particularly to a method for manufacturing a semiconductor device and a semiconductor device capable of suppressing a short circuit between patterns even when the pattern of a titanium silicide film is miniaturized.

  FIG. 16 is a cross-sectional view showing an example of a semiconductor device using a titanium silicide film. This semiconductor device is disclosed in Japanese Patent Application Laid-Open No. 2000-082811, and is manufactured using, for example, a salicide (Self-Aligned-Silicide) technique as follows.

  That is, a plurality of element isolation oxide films 19 are formed on the silicon substrate 10, and the gate oxide film 12 is formed between the element isolation oxide films 19. After the gate electrode 14 made of polycrystalline silicon is formed on the gate oxide film 12, a low concentration impurity layer 17 is formed by ion implantation using the gate electrode 14 as a mask. Thereafter, a sidewall material 16 is formed on the sidewall of the gate electrode 14, and an impurity layer 18 serving as a source and a drain is formed using the gate electrode 14 and the sidewall material 16 as a mask.

  Then, a titanium film (not shown) is formed on the entire surface of the substrate by sputtering. When heat treatment is performed, each of the gate electrode 14 and the impurity layer 18 reacts with the titanium film, and a titanium silicide film 13 is formed on the surface of each of the gate electrode 14 and the impurity layer 18. At this time, the titanium silicide film 13 has a high resistance crystal structure (C49 phase). Thereafter, the non-silicided titanium film is removed by etching. In order to cause the titanium silicide film 13 to transition to a low-resistance crystal structure (C54 phase), the titanium silicide film 13 is heat-treated at a higher temperature than when the titanium silicide film 13 is formed. Thereafter, an interlayer insulating film 8 is formed on the titanium silicide film 13, the element isolation oxide film 19, and the sidewall material 16. Then, a contact hole 8a is formed in a portion of the interlayer insulating film 8 overlapping the titanium silicide film 13, and aluminum alloy wirings 9a and 9b are formed so as to pass through the upper surface of the contact hole 8a. At this time, a part of the aluminum alloy is buried in the contact hole, and the aluminum alloy wires 9a and 9b and the titanium silicide film 13 are made conductive.

JP 2000-082811 A (paragraphs 32 to 37, FIGS. 1 to 6)

However, when the titanium silicide film is phase-shifted from the C49 phase to the C54 phase, the titanium silicide film is heat-treated at a high temperature, so that silicon in the titanium silicide film remains on the sidewall material and the surface of the element isolation oxide film. In some cases, the titanium film diffused horizontally. For this reason, the titanium silicide film sometimes protrudes from the surface of each of the gate electrode and the impurity layer to a portion where the base is not silicon, such as the surface of the element isolation oxide film or the surface of the sidewall material. In this case, if the pattern of the titanium silicide film is further miniaturized, there is a possibility that a short circuit occurs between the patterns.
The present invention has been made in consideration of the above-described circumstances, and a purpose thereof is a method of manufacturing a semiconductor device and a semiconductor capable of suppressing a short-circuit between patterns even if the pattern of the titanium silicide film is miniaturized. To provide an apparatus.

In order to solve the above problems, a method of manufacturing a semiconductor device according to the present invention includes
Forming an element isolation oxide film and a gate electrode made of polycrystalline silicon on a silicon substrate;
Forming a sidewall material on the sidewall of the gate electrode;
Forming an impurity layer on the silicon substrate;
Forming a titanium film so as to cover the element isolation oxide film, the gate electrode, the sidewall material, and the impurity layer;
By heat-treating the impurity layer, the gate electrode, and the titanium film, a portion where the impurity layer and the titanium film are in contact with each other and a portion where the gate electrode and the titanium film are in contact with each other are C49. Forming a phase titanium silicide film;
A step of forming an oxide layer on a portion of the surface of the titanium film overlapping with the element isolation oxide film and the sidewall material;
The titanium silicide film is changed from the C49 phase to the C54 phase by heat-treating the titanium silicide film of the C49 phase, the titanium film, and the oxide layer at a higher temperature than the step of forming the C49 phase titanium silicide film. Transforming the titanium film into a titanium oxide film by reacting with the oxide layer; and
Removing the titanium oxide film and the oxide layer.

  According to the semiconductor manufacturing method described above, the titanium silicide film undergoes phase transition from the high-resistance crystal structure (C49 phase) to the low-resistance crystal structure (C54 phase), and the surface of the element isolation oxide film and the side wall material The titanium film remaining on the surface is changed to a titanium oxide film. For this reason, in the heat treatment for phase transition, silicon contained in the titanium silicide film is difficult to diffuse into the remaining titanium film. Therefore, the titanium silicide film hardly protrudes from the surfaces of the gate electrode and the impurity layer, and even if the titanium silicide film is miniaturized, a short circuit between the titanium silicide films can be suppressed.

Another method for manufacturing a semiconductor device according to the present invention is as follows:
Forming an insulating layer on a portion of the surface of the silicon layer;
Forming a titanium film on the surface of the silicon layer and the surface of the insulating layer;
Forming a C49 phase titanium silicide film in a portion where the silicon layer and the titanium film are in contact with each other by heat-treating the silicon layer and the titanium film;
Forming an oxide layer on a portion of the surface of the titanium film overlapping the insulating layer;
By heating the silicon layer, the titanium film, the C49-phase titanium silicide film, and the oxide layer at a higher temperature than the step of forming the C49-phase titanium silicide film, the titanium silicide film is converted into C49. A phase transition from a phase to a C54 phase, and the titanium film reacts with the oxide layer to change to a titanium oxide film;
Removing the titanium oxide film and the oxide layer.

Another method for manufacturing a semiconductor device according to the present invention is as follows:
Forming an insulating layer on a portion of the surface of the silicon layer;
Forming a titanium film on the surface of the silicon layer and the surface of the insulating layer;
Forming a C49 phase titanium silicide film in a portion where the silicon layer and the titanium film are in contact with each other by heat-treating the silicon layer and the titanium film;
Forming an oxide layer on a portion of the surface of the titanium film overlapping the insulating layer;
By heating the silicon layer, the titanium film, the C49-phase titanium silicide film, and the oxide layer at a higher temperature than the step of forming the C49-phase titanium silicide film, the titanium silicide film is converted into C49. A phase transition from a phase to a C54 phase, and at least a part of the titanium film reacts with the oxide layer to change to a titanium oxide layer;
Removing the titanium oxide layer and the oxide layer;
Removing the titanium film remaining without being oxidized.

According to another method of manufacturing a semiconductor device described above, the titanium silicide film undergoes a phase transition from a high resistance crystal structure (C49 phase) to a low resistance crystal structure (C54 phase) and remains on the surface of the insulating layer. The titanium film is changed to a titanium oxide film 22. For this reason, in the heat treatment for phase transition, silicon contained in the titanium silicide film is difficult to diffuse into the remaining titanium film. Therefore, the titanium silicide film hardly protrudes from the surface of the silicon layer to the surface of the insulating layer, and even if the titanium silicide film is miniaturized, a short circuit between the titanium silicide films can be suppressed.
There may be one silicon layer or a plurality of silicon layers. In this case, a titanium silicide film is formed on the surface of each of the plurality of silicon layers.

In the method of manufacturing a semiconductor device according to the present invention, when the oxide layer is a silicon oxide layer, the oxide layer and the titanium oxide film are removed in the step of removing the titanium oxide film and the oxide layer. It can also be removed by etching using a hydrogen fluoride-containing material.
Further, in the step of removing the titanium oxide film and the oxide layer, after the adhesive tape is adhered to the surface of the oxide layer, the oxide layer and the metal oxide layer are removed by peeling the adhesive tape. It is also possible to remove it by peeling off. In this case, it is also possible to perform RCA cleaning after removing the oxide layer and the titanium oxide film.

A semiconductor device according to the present invention includes:
An element isolation oxide film;
A gate electrode made of polycrystalline silicon;
A sidewall material made of silicon oxide and formed on the sidewall of the gate electrode;
An impurity layer;
A titanium silicide film formed on the surface of each of the gate electrode and the impurity layer,
The titanium silicide film is formed by heating a titanium film formed so as to cover the element isolation oxide film, the gate electrode, the side wall material, and the impurity layer together with the gate electrode and the impurity layer, It is formed as a C49 phase titanium silicide film, and is then subjected to a heat treatment at a higher temperature than this heat treatment, thereby causing a phase transition to the C54 phase.
The titanium film remaining on the element isolation oxide film and the sidewall material is removed after being changed to titanium oxide.

Other semiconductor devices according to the present invention are:
A silicon layer;
An insulating layer formed on a part of the surface of the silicon layer;
A titanium silicide film formed on another portion of the surface of the silicon layer,
The titanium silicide film is formed as a C49 phase titanium silicide film by heat-treating the titanium film formed so as to cover the silicon layer and the insulating layer together with the insulating layer. It has undergone a phase transition to C54 phase due to heat treatment at
The titanium film remaining on the insulating layer is removed after changing to titanium oxide.

Another semiconductor device according to the present invention includes a silicon layer,
An insulating layer formed on a part of the surface of the silicon layer;
A titanium silicide film formed on another portion of the surface of the silicon layer,
The titanium silicide film is formed as a C49 phase titanium silicide film by heat-treating the titanium film formed so as to cover the silicon layer and the insulating layer together with the insulating layer. It has undergone a phase transition to C54 phase due to heat treatment at
At least a portion of the titanium film remaining on the insulating layer is removed after changing to titanium oxide,
The titanium film remaining without changing to titanium oxide is also removed.

In the semiconductor device according to the present invention, when the oxide layer is a silicon oxide layer, the oxide layer and the titanium oxide layer may be removed by etching using a hydrogen fluoride-containing material. .
Further, the oxide layer and the titanium oxide layer may be peeled and removed by peeling the pressure-sensitive adhesive tape after the pressure-sensitive adhesive tape is adhered to the surface of the oxide layer.

BEST MODE FOR CARRYING OUT THE INVENTION

  Embodiments of the present invention will be described below with reference to the drawings. 1 to 6 are cross-sectional views showing a method of manufacturing the semiconductor device having the structure shown in FIG. 16 according to the first embodiment of the present invention.

  First, as shown in FIG. 1, an element isolation oxide film 19 is formed on the silicon substrate 10. Then, a gate oxide film 12 is formed on the surface of the silicon substrate 10 between the element isolation oxide films 19. As the element isolation oxide film, a structure such as LOCOS, semi-recessed LOCOS, and shallow trench can be used. Then, a gate electrode 14 made of polycrystalline silicon is formed on the gate oxide film 12, and a low concentration impurity layer 17 is formed by ion implantation using the gate electrode 14 as a mask. Thereafter, a sidewall material 16 is formed on the sidewall of the gate electrode 14. Thereafter, an impurity layer (source / drain) 18 is formed on the silicon substrate 10 using the gate electrode 14 and the side wall material 16 as a mask. These forming methods use known methods.

  Next, as shown in FIG. 2, the titanium film 11 is formed by sputtering titanium on the entire surface of the silicon substrate including the gate electrode 14, the sidewall material 16, the impurity layer 18, and the element isolation oxide film 19. At this time, the thickness of the titanium film 11 is, for example, about 30 nm. The thickness of the titanium film 11 can be calculated by dividing the desired thickness of the titanium silicide film by a certain constant. In the present embodiment, this constant is about 2.5.

  Next, the titanium film 11, the gate electrode 14, and the impurity layer 18 are heat-treated at 500 ° C to 700 ° C. For example, when the heating temperature is 700 ° C., the heating time is 30 seconds. By this heat treatment, titanium in the gate electrode 14 and the impurity layer 18 reacts with titanium in the titanium film 11, and as shown in FIG. 3, titanium having a thickness of about 75 nm is formed on the surfaces of the gate electrode 14 and the impurity layer 18, respectively. A silicide film 13 is formed. At this time, portions of the titanium film 11 formed on the element isolation oxide film 19 and the side wall material 16 remain without being silicided. The titanium silicide film 13 formed here has a high-resistance crystal structure (C49 phase).

Next, as shown in FIG. 4, a silicon oxide layer 20 is formed on the surfaces of the remaining titanium film 11 and titanium silicide film 13. The silicon oxide layer 20 is formed by, for example, a CVD method.
Then, as shown in FIG. 5, the silicon oxide layer 20 is patterned to remove the silicon oxide layer 20 formed on the surface other than the surface of the titanium film 11. The patterning of the silicon oxide layer 20 is performed as follows, for example. First, a photoresist film (not shown) is applied on the silicon oxide layer 20, and this photoresist film is exposed and developed to form a resist pattern on the silicon oxide layer 20. Next, the silicon oxide layer 20 is etched using this resist pattern as a mask.

  Next, the titanium film 11, the titanium silicide film 13, and the silicon oxide layer 20 are heat-treated at a higher temperature, for example, 800 ° C. than the step of forming the titanium silicide film 13. The heating time at this time is, for example, 30 seconds. By this heat treatment, the titanium silicide film 13 undergoes a phase transition from a high-resistance crystal structure (C49 phase) to a low-resistance crystal structure (C54 phase).

  In this heat treatment, as shown in FIG. 6, since the titanium film 11 remaining on each of the element isolation oxide film 19 and the sidewall material 16 is in contact with the silicon oxide layer 20, the titanium silicide film 13 is changed to silicon. Before diffusing, it reacts with oxygen contained in the silicon oxide layer 20 to become a microcrystallized titanium oxide (TiOx) film 22. For this reason, the titanium silicide film 13 does not easily protrude from the surfaces of the gate electrode 14 and the impurity layer 18 in the heat treatment for phase transition, and is not easily short-circuited even if miniaturization proceeds.

  Next, as shown in FIG. 7, the silicon oxide layer 20 and the titanium oxide film 22 are removed by etching. For the etching, for example, a solution containing hydrogen fluoride is used. At this time, if the silicon oxide layer 20 is thick, it becomes difficult to control the etching. That is, if the etching time is short, the silicon oxide layer 20 or the titanium oxide film 22 remains, and if the etching time is long, the element isolation oxide film 19 is etched. For this reason, the silicon oxide layer 20 is preferably formed thin in the process shown in FIG.

Further, even when a part of the titanium film 11 remains without being oxidized, since the solution containing hydrogen fluoride is used for etching, the remaining titanium film 11 is also removed. That is, in this embodiment, the step of removing the silicon oxide layer 20 and the titanium oxide film 22 and the step of removing the remaining titanium film 11 are performed simultaneously.
Note that RCA cleaning may be performed after the etching.

  Next, an interlayer insulating film 8 such as a silicon oxide film is deposited on the entire surface including the capacitive element and the MOS transistor by a CVD method. Next, a photoresist film (not shown) is applied on the interlayer insulating film 8, and this photoresist film is exposed and developed to form a resist pattern on the interlayer insulating film 8. Next, by etching the interlayer insulating film 8 using this resist pattern as a mask, contact holes 8a (see FIG. 16) located on the gate electrode 14 and the impurity layer 18 are formed in the interlayer insulating film 8.

  Next, an Al alloy film is deposited in the contact holes 8a and on the interlayer insulating film 8 by sputtering. Next, a photoresist film (not shown) is applied on the Al alloy film, and the photoresist film is exposed and developed to form a resist pattern on the Al alloy film. Next, by etching the Al alloy film using the resist pattern as a mask, the Al alloy wiring 9 a connected to the impurity layer 18 and the Al alloy wiring 9 b connected to the gate electrode 14 are formed on the interlayer insulating film 8. It is formed. As the Al alloy wiring, a wiring in which Ti / TiN / Al—Cu / TiN is laminated from the substrate side may be used.

  The semiconductor device thus manufactured has a structure as shown in FIG. That is, an element isolation oxide film 19 is formed on the surface of the silicon substrate 10. In the element region between the element isolation oxide films 19, an impurity layer 18 that is a source diffusion layer, a gate electrode 14, and a drain are formed. An impurity layer 18 which is a diffusion layer is formed in this order. The gate electrode 14 is formed on the gate oxide film 12, and a side wall material 16 is formed on the side surface. A titanium silicide film 13 is formed on the surfaces of the impurity layer 18 and the gate electrode 14 so as not to protrude outward. An interlayer insulating film 8 is formed on the element isolation oxide film 19, the sidewall material 16 and the titanium silicide film 13. A contact hole 8 a located on the titanium silicide film 13 is formed in the interlayer insulating film 8. The titanium silicide film 13 is connected to Al alloy wirings 9a and 9b formed on the surface of the semiconductor device by contact holes 8a.

  According to the above embodiment, after the titanium film 11 is reacted with the gate electrode 14 and the impurity layer 18 to form the titanium silicide film 13 having a high-resistance crystal structure (C49 phase), it does not change to titanium silicide. A silicon oxide layer 20 is formed on the remaining titanium film 11. Then, the titanium silicide film 13, the remaining titanium film 11, and the silicon oxide layer 20 are heat-treated to change the titanium silicide film 13 from a high-resistance crystal structure (C49 phase) to a low-resistance crystal structure (C54 phase). The phase is changed and the titanium film 11 is changed to the titanium oxide film 22. Therefore, in the heat treatment for phase transition of the titanium silicide film 13, silicon contained in the titanium silicide film 13 is contained in the titanium film 11 remaining on the surface of the element isolation oxide film 19 and the surface of the sidewall material 16. Difficult to diffuse. Therefore, the titanium silicide film 13 does not easily protrude from the surfaces of the gate electrode 14 and the impurity layer 18, and even if the titanium silicide film 13 is miniaturized, a short circuit between the titanium silicide films 13 can be suppressed.

  Note that ions may be implanted into the gate electrode 14 and the impurity layer 18 after the gate electrode 14, the sidewall material 16, the impurity layer 18, and the element isolation oxide film 19 are formed and before the titanium film 11 is formed. By performing this treatment, the titanium silicide film 13 is easily formed on the surfaces of the gate electrode 14 and the impurity layer 18. Ion implantation is performed, for example, as follows. First, a silicon oxide layer is formed by a CVD method so as to cover the gate electrode 14, the sidewall material 16, the impurity layer 18 and the element isolation oxide film 19. Next, a photoresist film (not shown) is applied, and this photoresist film is exposed and developed to form a resist pattern on the silicon oxide layer. Next, using this resist pattern as a mask, the silicon oxide layer is removed by etching from the surfaces of the gate electrode 14 and the impurity layer 18. After removing the resist pattern, argon ions are implanted into the gate electrode 14 and the impurity layer 18. Thereafter, the silicon oxide layer is removed by etching.

Next, a second embodiment according to the present invention will be described with reference to FIG.
In the second embodiment, first, the structure shown in FIG. 6 is formed by performing the processing described with reference to FIGS. 1 to 6 in the first embodiment. Next, as shown in FIG. 8, after the adhesive tape 100 is adhered on the silicon oxide layer 20, the adhesive tape 100 is peeled off.
The bonding force between the titanium oxide film 22 and the element isolation oxide film 19 is weaker than the bonding force between the titanium oxide film 22 and the silicon oxide layer 20. Therefore, when the adhesive tape 100 is peeled off, the titanium oxide film 22 and the element isolation oxide film 19 are separated from each other, and the silicon oxide layer 20 and the titanium oxide film 22 are peeled off from the main body of the semiconductor device together with the adhesive tape 100. It is. Then, the surface of the semiconductor device is RCA cleaned.
Even in this case, the silicon oxide layer 20 and the titanium oxide film 22 can be removed.

Next, a third embodiment according to the present invention will be described with reference to FIGS. This embodiment shows a method of forming a titanium silicide film in the gap between insulating layers on the surface of a silicon layer.
First, as shown in FIG. 9, a silicon oxide layer 31 as an example of an insulating layer is formed on the surface of the silicon layer 30 as follows. That is, the silicon oxide layer 31 is formed on the surface of the silicon layer 30 by, for example, the CVD method. Next, a photoresist film (not shown) is applied, and this photoresist film is exposed and developed to form a resist pattern on the silicon oxide layer. Next, using this resist pattern as a mask, a part of the silicon oxide layer is removed by etching, and the silicon layer 30 is exposed.
The silicon layer 30 may be a silicon substrate, or a single crystal silicon film, a polycrystalline silicon film, or an amorphous silicon film formed on the substrate. Further, the silicon oxide layer 31 may be formed by a method other than the CVD method, for example, a thermal oxidation method.

Next, as shown in FIG. 10, a titanium film 32 is formed on the surface of each of the silicon layer 30 and the silicon oxide layer 31 by sputtering.
Next, the silicon layer 30 and the titanium film 32 are heat-treated at 500 ° C. to 700 ° C. For example, when the heating temperature is 700 ° C., the heating time is 30 seconds. By this heat treatment, the silicon layer 30 and the titanium film 32 react, and as shown in FIG. 11, a C49-phase titanium silicide film 34 is formed at a portion where the silicon layer 30 and the titanium film 32 are in contact with each other.

  Next, as shown in FIG. 12, a silicon oxide layer 36 is formed on the surfaces of the remaining titanium film 32 and titanium silicide film 34. The silicon oxide layer 36 is formed by, for example, a CVD method. Then, as shown in FIG. 13, the silicon oxide layer 36 is patterned, and the silicon oxide layer 36 is removed from the titanium silicide film 34. The patterning of the silicon oxide layer 36 is performed similarly to the patterning of the silicon oxide layer 20 in the first embodiment.

  Next, heat treatment is performed at a higher temperature, for example, 800 ° C. than the step of forming the titanium film 32, the titanium silicide film 34, and the silicon oxide layer 36. The heating time at this time is, for example, 30 seconds. By this heat treatment, as shown in FIG. 14, as in the first embodiment, the titanium silicide film 13 undergoes a phase transition from a high-resistance crystal structure (C49 phase) to a low-resistance crystal structure (C54 phase). The titanium film 32 changes to a microcrystallized titanium oxide film 38.

Next, the titanium oxide film 38 and the silicon oxide layer 36 are removed by etching with a solution containing hydrogen fluoride using a method similar to that of the first embodiment. Here, even when a part of the titanium film 32 remains without being oxidized, since the solution containing hydrogen fluoride is used for etching, the remaining titanium film 32 is also removed. That is, in this embodiment, the step of removing the silicon oxide layer 36 and the titanium oxide film 38 and the step of removing the remaining titanium film 32 are performed simultaneously.
Further, RCA cleaning may be performed after the etching, or the titanium oxide film 38 and the silicon oxide layer 36 may be removed by using a method similar to that of the second embodiment.

  In this manner, as shown in FIG. 15, a titanium silicide film 34 is formed between the silicon oxide layers 31 on the surface of the silicon layer 30. Also in this embodiment, the titanium silicide film 34 hardly protrudes from the surface of the silicon layer 30 to the surface of the silicon oxide layer 31 due to the same operation as that of the first embodiment. A short circuit between the titanium silicide films 34 can be suppressed.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the third embodiment, one or more silicon layers other than the silicon layer 30 may be formed, and the titanium film 32 may be formed on the surfaces of the silicon layer, the silicon layer 30, and the silicon oxide layer 31, respectively. In this case, a titanium silicide film is formed on the surface of each of the silicon layer 30 and other silicon layers by the first heat treatment. After the silicon oxide layer 36 is formed, the silicon oxide layer 36 is removed by etching from the respective titanium silicide films formed on the surfaces of the silicon layers. Thereafter, by performing the same process as in the third embodiment, the titanium film 32 remaining on the surface of the silicon oxide layer 36 is removed.

Sectional drawing which shows the manufacturing method of the semiconductor device by 1st Embodiment Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the manufacturing method of the semiconductor device by 2nd Embodiment Sectional drawing which shows the manufacturing method of the semiconductor device by 3rd Embodiment Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional drawing which shows the next process of FIG. Sectional view showing structure of semiconductor device

Explanation of symbols

9a, 9b ... Al alloy wiring, 10 ... silicon substrate, 11, 32 ... titanium film, 12 ... gate oxide film, 13, 34 ... titanium silicide film, 14 ... gate electrode, 16 ... sidewall material, 17 ... low concentration impurity layer , 18 ... Impurity layer, 19 ... Element isolation oxide film, 20, 31, 36 ... Silicon oxide layer, 22, 38 ... Titanium oxide layer, 30 ... Silicon layer, 100 ... Adhesive tape

Claims (11)

Forming a device isolation oxide film and a gate electrode made of polycrystalline silicon on a silicon substrate;
Forming a sidewall material on the sidewall of the gate electrode;
Forming an impurity layer on the silicon substrate;
Forming a titanium film so as to cover the element isolation oxide film, the gate electrode, the sidewall material, and the impurity layer;
By heat-treating the impurity layer, the gate electrode, and the titanium film, a portion where the impurity layer and the titanium film are in contact with each other and a portion where the gate electrode and the titanium film are in contact with each other are C49. Forming a phase titanium silicide film;
A step of forming an oxide layer on a portion of the surface of the titanium film overlapping with the element isolation oxide film and the sidewall material;
The titanium silicide film is changed from the C49 phase to the C54 phase by heat-treating the titanium silicide film of the C49 phase, the titanium film, and the oxide layer at a higher temperature than the step of forming the titanium silicide film of the C49 phase. Transforming the titanium film into a titanium oxide film by reacting with the oxide layer; and
A method of manufacturing a semiconductor device, comprising: removing the titanium oxide film and the oxide layer. Forming an insulating layer on a portion of the surface of the silicon layer;
Forming a titanium film on the surface of the silicon layer and the surface of the insulating layer;
Forming a C49 phase titanium silicide film in a portion where the silicon layer and the titanium film are in contact with each other by heat-treating the silicon layer and the titanium film;
Forming an oxide layer on a portion of the surface of the titanium film overlapping the insulating layer;
By heating the silicon layer, the titanium film, the C49-phase titanium silicide film, and the oxide layer at a higher temperature than the step of forming the C49-phase titanium silicide film, the titanium silicide film is converted into C49. A phase transition from a phase to a C54 phase, and the titanium film reacts with the oxide layer to change to a titanium oxide film;
A method for manufacturing a semiconductor device, comprising: removing the titanium oxide film and the oxide layer. Forming an insulating layer on a portion of the surface of the silicon layer;
Forming a titanium film on the surface of the silicon layer and the surface of the insulating layer;
Forming a C49 phase titanium silicide film in a portion where the silicon layer and the titanium film are in contact with each other by heat-treating the silicon layer and the titanium film;
Forming an oxide layer on a portion of the surface of the titanium film overlapping the insulating layer;
By heating the silicon layer, the titanium film, the C49-phase titanium silicide film, and the oxide layer at a higher temperature than the step of forming the C49-phase titanium silicide film, the titanium silicide film is converted into C49. A phase transition from a phase to a C54 phase, and at least a part of the titanium film reacts with the oxide layer to change to a titanium oxide layer;
Removing the titanium oxide layer and the oxide layer, and removing the titanium film remaining without being oxidized. The oxide layer is a silicon oxide layer;
4. The semiconductor according to claim 1, wherein in the step of removing the titanium oxide film and the oxide layer, the oxide layer and the titanium oxide film are removed by etching using a hydrogen fluoride-containing material. Device manufacturing method. In the step of removing the titanium oxide film and the oxide layer, the pressure-sensitive adhesive tape is adhered to the surface of the oxide layer, and then the pressure-sensitive adhesive tape is peeled off to thereby remove the oxide layer and the titanium oxide film. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is removed by adhering to an adhesive tape. The method for manufacturing a semiconductor device according to claim 5, wherein RCA cleaning is performed after removing the oxide layer and the titanium oxide film. An element isolation oxide film;
A gate electrode made of polycrystalline silicon;
A sidewall material made of silicon oxide and formed on the sidewall of the gate electrode;
An impurity layer;
A titanium silicide film formed on the surface of each of the gate electrode and the impurity layer,
The titanium silicide film is formed by heating a titanium film formed so as to cover the element isolation oxide film, the gate electrode, the sidewall material, and the impurity layer together with the gate electrode and the impurity layer, It is formed as a C49 phase titanium silicide film, and is then subjected to a heat treatment at a higher temperature than this heat treatment, thereby causing a phase transition to the C54 phase.
The titanium film remaining on the element isolation oxide film and the sidewall material is removed after being changed into titanium oxide. A silicon layer;
An insulating layer formed on a part of the surface of the silicon layer;
A titanium silicide film formed on another portion of the surface of the silicon layer,
The titanium silicide film is formed as a C49 phase titanium silicide film by heat-treating the titanium film formed so as to cover the silicon layer and the insulating layer together with the insulating layer. It has undergone a phase transition to C54 phase due to heat treatment at
A semiconductor device in which the titanium film remaining on the insulating layer is removed after being changed into titanium oxide. A silicon layer;
An insulating layer formed on a part of the surface of the silicon layer;
A titanium silicide film formed on another portion of the surface of the silicon layer,
The titanium silicide film is formed as a C49 phase titanium silicide film by heat-treating the titanium film formed so as to cover the silicon layer and the insulating layer together with the insulating layer. It has undergone a phase transition to C54 phase due to heat treatment at
At least a portion of the titanium film remaining on the insulating layer is removed after changing to titanium oxide,
A semiconductor device in which the titanium film remaining without changing to titanium oxide is also removed. The semiconductor device according to claim 7, wherein the oxide layer is a silicon oxide layer, and the oxide layer and the titanium oxide layer are removed by etching using a hydrogen fluoride-containing material. The oxide layer and the titanium oxide layer are removed together with the pressure-sensitive adhesive tape by peeling the pressure-sensitive adhesive tape after the pressure-sensitive adhesive tape is adhered to the surface of the oxide layer. A semiconductor device according to claim 1.

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