JP2005116628A - Solid-state imaging device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device and a manufacturing method thereof which can prevent flow and dislocation of resin, ensures excellent imaging characteristic, simplification of manufacturing processes, and electrical and mechanical connections, and realizes improvement in the bonding quality of a solid-state image sensor. <P>SOLUTION: The solid-state imaging device comprises an insulating substrate 3 provided with a through-hole 1 and a wiring circuit 2, the solid-state image sensor 5 loaded to the through-hole 1, and a light transmitting member 8 which is arranged to close the through-hole keeping the predetermined interval from the solid-stage image sensor 5. The solid-state image sensor 5 is electrically connected to the wiring circuit of the insulating substrate 3, and the surrounding thereof is deposited via a resin layer 4. A region facing to the through-hole among the resin layer is forming a wall type light hardening layer 4S, while the remaining region is forming a thermosetting layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and in particular, a resin stain in an imaging area in a small-sized solid-state imaging device formed using a semiconductor imaging device such as a surveillance camera, a medical camera, and an in-vehicle camera. This is related to prevention.

  In recent years, this type of imaging apparatus outputs an image input via an optical system such as a lens as an electrical signal. With the downsizing and high performance of this imaging device, the camera has also been downsized and used in various fields, expanding the market as a video input device.

  In a conventional image pickup apparatus using a semiconductor image pickup device, components such as an LSI on which a lens, a semiconductor image pickup device, a driving circuit thereof, a signal processing circuit, and the like are mounted are respectively formed in a housing or a structure and combined. One mounting structure based on such a combination is formed by mounting each element component on a flat printed board.

Therefore, in order to further reduce the size of the device, a device in which an image pickup device such as a CCD or CMOS is mounted by a bare chip method has been proposed. The mounting substrate is provided with an opening in the mounting substrate so as to face the imaging area, or the imaging area portion becomes a transparent body so that the mounting substrate can be taken out to the external lens without impairing the performance of the imaging area of the imaging device. Formed.
As an example of this, a solid-state imaging device has been proposed in which a solid-state imaging device is mounted on a wiring board having openings that communicate with opposing first and second main surfaces and having a plurality of leads (patent). Reference 1). In this example, as shown in FIG. 8, an insulating adhesive 104 is formed so as to continuously surround the opening of the wiring substrate 103 having the through opening 101 and the wiring pattern 102 formed thereon, and face down The solid-state image pickup device chip 105 is joined. And the translucent board | substrate 108 is joined through the adhesive agent 107 so that the through-opening part 101 of this wiring board may be faced.

In this case, the bumps 106 of the solid-state imaging device chip 105 are electrically connected to the wiring pattern, and the alignment of both is extremely important.
2. Description of the Related Art Conventionally, a mounting method using a thermal pressure welding method using an anisotropic conductive resin (ACF or ACP) or an insulating resin (NCF or NCP) is used.
However, in the resin curing method by thermal curing, there is a problem that the resin flows out to the imaging area before curing, which becomes an obstacle to imaging.

  In order to prevent this problem, a method has been proposed in which a dummy wiring pattern is formed in a region that originally does not require wiring, and the dummy wiring pattern is used as a dam to prevent the resin from flowing out. However, since such a dummy wiring pattern is a conductor pattern, heat dissipation is also high. Therefore, the heat release performance is improved in the heat welding, and a larger amount of heat is required in the heat welding. Therefore, it is necessary to set the required heating temperature / time higher than the case where there is no dam like this, or set the time longer. This greatly affects the heat resistance of CCD and CMOS and the mounting productivity.

Further, the present applicant has proposed a method in which after the chip and the wiring pattern are bonded, an insulating resin to which UV curing is added is poured into the bonded portion while being irradiated with ultraviolet rays (UV) ( Patent Document 2).
In this method, the chip and the wiring pattern are first joined, and then an insulating resin is poured. Therefore, it is essential that the resin to be used has a low viscosity and the spread due to wetting is large. It is necessary to supply the resin above.
Further, since electrical connection and resin bonding are performed in two stages, productivity is not sufficient.
Further, in order to maintain the joint of the joint portion to which electrical connection is made, it must be heated under conditions with less thermal distortion, and it is necessary to perform the thermal curing slowly at a low temperature.
In addition, since it is necessary to perform bonding with an insulating resin in a state where electrical connection is maintained, there are many restrictions such as a possibility that the bonding may be removed with a flexible substrate.

Japanese Patent No. 3307319 JP-A-11-220115

As described above, in the conventional mounting method, the leakage of the adhesive resin at the time of mounting may cause contamination of the bare chip such as a CCD.
If a dam is formed with a wiring pattern in order to prevent the resin from flowing out, there is a problem in that heat flow out at the time of thermocompression bonding, the heat efficiency is poor, and sufficient bonding cannot be performed.
Further, when the resin is poured after the electrical connection, the productivity is not sufficient, and there is a problem that the electrical connection is likely to drop when the insulating resin is cured.
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a solid-state imaging device excellent in imaging characteristics by preventing outflow of resin and preventing displacement.
Another object is to simplify the manufacturing process.
It is another object of the present invention to ensure the electrical connection and mechanical connection of the solid-state image sensor and to improve the adhesion quality of the solid-state image sensor.

  Therefore, the present invention includes a substrate having a through-opening portion and having a wiring circuit portion, and a solid-state imaging device attached to the through-opening portion, and the solid-state imaging with respect to the wiring circuit portion of the substrate. The elements are electrically connected, and the periphery of the electrically connected portion is fixed via a resin layer, and the region of the resin layer that faces the through opening is photocured into a wall shape and remains. The area is heat cured.

  With this configuration, the area facing the through opening of the resin layer is photocured in the shape of a wall, and this photocured resin layer acts as a dam to prevent the resin from flowing out, so there is no resin seepage In addition, a highly reliable mounting structure can be obtained. In addition, since a dense and uniform UV cured layer is formed in the through-opening portion, the moisture intrusion route is cut off, resulting in a long life and high reliability. In addition, it is possible to avoid a shape with stress concentration due to the outflow of the resin, and higher connection reliability can be obtained.

In the present invention, the solid-state imaging device includes a translucent member disposed so as to close the through-opening portion at a predetermined interval from the solid-state imaging device, and the substrate is an insulating substrate. And the wiring circuit portion has a wiring pattern in which a part of the solid-state imaging device on the insulating substrate is exposed, and the solid-state imaging device is connected to the wiring pattern of the circuit portion. Directly connected face down.
Further, the wiring circuit portion may have a multilayer wiring structure having a wiring pattern in which a part of the wiring circuit portion is exposed to a portion where the solid-state imaging device is mounted on the insulating substrate.
With this configuration, it is possible to reduce the size of the solid-state imaging device having a desired wiring pattern.

In the present invention, in the solid-state imaging device, the substrate is a light-shielding substrate.
With this configuration, it is possible to selectively irradiate only the periphery of the through opening by irradiating light from the back surface, and the above-mentioned wall-shaped photocured region can be easily formed with good workability. It becomes.

In the present invention, in the solid-state imaging device, the resin layer is made of a resin having UV curable properties and thermosetting properties.
With this configuration, it is possible to form a UV cured layer that becomes a dam very easily by UV irradiation, and after that, it can be thermally cured well by heating.

  In the present invention, in the solid-state imaging device, the resin layer is made of a thermosetting acrylic resin to which UV curing is added.

  In the present invention, in the solid-state imaging device, the resin layer is made of a thermosetting epoxy resin to which UV curing is added.

  Furthermore, an epoxy resin that can withstand Pb-free solder reflow conditions and has excellent heat resistance is used as the base resin, and the electrodes are connected by a hot-pressure welding method under heating conditions of 200 ± 50 ° C and time of 1 to 30 seconds. It is desirable to use a thermosetting type curing system that can seal the periphery of the electrode, for example, a polyaddition type acid anhydride type or a catalyst type anionic polymerization type (amine, imidazole, etc.) cured resin. Then, a catalyst-type cationic polymerization-type cured resin is added as a UV-curable resin to the base resin.

In the present invention, in the solid-state imaging device, the substrate is a semiconductor substrate on which a signal processing circuit is integrated.
With this configuration, it is not necessary to mount a chip component, and it is possible to reduce the size and thickness. In addition, it is easy to form in a so-called CSP process of dividing into individual components by dicing after mounting.

According to another aspect of the present invention, there is provided a step of forming a resin layer on a substrate having a through-opening portion at a center portion and having a wiring circuit portion so as to face the through-opening portion, A solid-state imaging device mounting step for mounting, and irradiating ultraviolet rays (UV) from the insulating substrate side through the through-opening portion, and curing a region formed to face the through-opening portion of the resin layer Forming the UV cured layer and heating the resin layer while applying pressure so that the solid-state imaging device and the wiring circuit unit are electrically connected to each other to heat the solid-state imaging device to the wiring circuit unit. Crimping.
With this configuration, by performing UV curing through the through opening, a UV cured layer that faces the through opening can be formed without forming a new mask. Then, by performing thermocompression bonding, this UV cured layer becomes a dam, and the resin can be prevented from flowing out, so that it is possible to easily realize highly reliable bonding with good workability. In addition, since electrical bonding and mechanical bonding can be realized in the same process, the reliability is high.

The present invention also includes a translucent member mounting step of mounting the translucent member so as to close the through opening of the substrate after the thermocompression bonding step in the method of manufacturing the solid-state imaging device.
With this configuration, since the translucent member is bonded after the solid-state image sensor is mounted, the gas generated when the solid-state image sensor is pressed can be efficiently released.

Further, according to the present invention, in the method for manufacturing the solid-state imaging device, prior to the solid-state imaging element mounting step, the translucent member is mounted so as to close the through-opening portion of the substrate having the wiring layer. Process.
With this configuration, in addition to the above effects, the number of thermal processes after mounting the solid-state imaging device is reduced, and deterioration of device characteristics can be prevented.

In the method for manufacturing the solid-state imaging device according to the present invention, the substrate is a light-shielding substrate.
With this configuration, when a dam is formed by performing a photocuring process through the through opening, a good wall-shaped UV cured layer can be formed in a self-aligning manner.

Moreover, this invention is a manufacturing method of the said solid-state imaging device, The said board | substrate is a translucent board | substrate.
With this configuration, when a dam is formed by performing a photocuring process, the design becomes extremely easy.

The present invention also includes a step of mounting a light-shielding member on the substrate prior to the step of forming the UV cured layer in the method of manufacturing the solid-state imaging device.
With this configuration, a dam can be easily formed with good workability even when a translucent substrate is used.

Further, in the method of manufacturing the solid-state imaging device according to the present invention, in the step of forming the UV cured layer, the wiring circuit unit is configured to perform UV irradiation using a light-shielding member opening at a joint of the wiring circuit unit as a mask Is a step of UV-curing at least partly in a self-aligning manner using a mask as a mask.
According to this method, since the edge of the UV cured layer is formed in a self-aligned manner because the wiring circuit portion is used as a mask, it is possible to realize the exudation of the resin with high accuracy while the mask accuracy is unnecessary. Can do.
Here, the through opening portion includes not only a shape opening but also a translucent window.

  According to the present invention, since the UV cured layer formed by UV irradiation from the through-opening is used as a dam, electrical connection and mechanical connection are simultaneously realized by thermocompression bonding, so that workability is improved. In addition, it is possible to form a solid-state imaging device with high reliability.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is an explanatory diagram of a main part of the solid-state imaging device according to the first embodiment.
When this solid-state imaging device is disposed, the solid-state imaging device chip 5 is fixed to a region facing the through-opening portion 1 of the insulating substrate using the thermosetting resin layer 4 to which UV curing is added. Then, the UV curing layer 4S is formed by first irradiating light from this through-opening portion and UV-curing into a wall shape. By using this as a dam, the thermosetting resin is cured, so that the thermosetting layer 4H is formed. This prevents the resin from flowing out to the through opening that is formed and serves as an imaging area.

  That is, this solid-state imaging device has a light-shielding insulating substrate 3 having a through-opening portion 1 and having a wiring circuit portion, a solid-state imaging device chip 5 mounted in the through-opening portion 1, and a solid-state imaging device. And a glass substrate 8 as a translucent member disposed so as to close the through opening 1 at a predetermined interval from the chip 5, and solid-state imaging with respect to the wiring circuit portion of the insulating substrate 3. The element chip 5 is electrically connected and the periphery thereof is fixed through a resin layer 4 made of a UV curable thermosetting resin, and faces the through opening 1 in the resin layer. The region constitutes the wall-shaped UV curable layer 4S, and the region remaining inside the region constitutes the thermosetting layer 4H.

Here, the insulating substrate 3 has a square through opening 1 having a side of 3 mm at the center, and a wiring pattern 2 made of a copper pattern having a thickness of about 20 μm formed by a screen printing method on the front and back surfaces. It is composed of a light-shielding substrate having a thickness of 100 μm made of a polyphthalamide resin formed.
Further, an IR filter and a lens barrel 10 made of a translucent glass substrate 8 are formed on the other surface side of the insulating substrate. On the other hand, around the lens barrel 10, an I / O connector 11, a chip component 12 such as a capacitor and a resistor, a control MCM 13 and the like are fixed.

This insulating resin is obtained by adding a catalyst type cationic polymerization type cured resin to a cured resin such as a polyaddition type acid anhydride type or a catalyst type anionic polymerization type (amine, imidazole). Here, as a catalyst, an amount of a catalyst capable of curing at 1000 to 3000 mJ / cm ² is added by applying an illuminance of 100 to 1000 mW / cm ² at a main wavelength of a high pressure mercury lamp, a metal halide lamp, a gallium lamp or the like. It is desirable to do. Further, it is desirable that the UV-cured region has a film thickness and hardness that does not cause stress breakdown by heat flow when the resin layer is heated. Furthermore, the film thickness and hardness need not affect the bonding with the electrode. Specifically, the thickness of 50 ± 25 μm cured by UV irradiation and the hardness are designed with the upper limit being the hardness that does not break the passivation film of the IC to be mounted.

  In addition, when the film is torn when the resin layer is thermocompression-bonded with an upper limit hardness that does not destroy the IC passivation, if the resin that has been broken out is UV-cured by UV irradiation even during thermocompression bonding, more It can be reliably joined. In this case, the thermocompression bonding temperature needs to be performed at a temperature at which the UV curable catalyst is not gasified. As a result, when mounting by thermosetting from the UV-cured state, the same connection reliability as conventional thermosetting resin mounting can be obtained, and the UV-cured film prevents the insulating resin from flowing out. The imaging characteristics of the solid-state imaging device can be maintained well.

In addition, in the case of only the conventional insulating resin, it often has a wavy fillet shape that is the same as the supply shape of the insulating resin, but a uniform and dense UV cured layer film is formed in the opening. It is possible to cut off the moisture infiltration route and improve the moisture resistance. In addition, a shape with stress concentration can be avoided, and higher connection reliability can be obtained.
Here, the translucent glass substrate 3 constituting the optical filter is composed of a quartz crystal refracting plate, and is fixed to the insulating substrate 1 at the peripheral edge via an adhesive.

Next, a method for manufacturing the solid-state imaging device will be described.
First, as shown in FIG. 2A, a light-shielding insulating substrate 3 made of a polyphthalamide resin is prepared, a square through opening 1 having a side of 3 mm is formed at the center, and a screen printing method is used. Thus, the wiring pattern 2 made of a copper pattern with a film thickness of about 20 μm is formed. The surface of the copper pattern is preferably Ni or Au plating suitable for the thermocompression bonding method.
Subsequently, as shown in FIG. 2B, the above-described insulating resin is applied so as to cover a part of the wiring pattern of the insulating substrate, and the resin layer 4 is formed.
After that, a thin film capacitor is formed by laminating the thin films, a thin film resistor is formed between the wiring patterns, a thin film resistor is formed, and chip components are connected as necessary.

  Further, as shown in FIG. 2C, the wiring pattern 2 on the surface of the insulating substrate 3 is arranged so that the bumps 6 of the solid-state imaging device chip 5 are in contact with each other at a temperature that does not exceed the thermosetting temperature of the resin. Heating and slightly pressing and temporarily fixing, UV irradiation is performed from the insulating substrate 3 side through the through opening 1. Here, the UV irradiation conditions may be determined according to the resin layer and the solid-state imaging device chip to be used so that the UV cured layer 4S has a wall thickness of about 50 μm.

Thereafter, as shown in FIG. 2 (d), pressure is applied while heating with the tool T so that the bumps 6 of the solid-state imaging device chip 5 come into contact with the wiring pattern 2 on the surface of the insulating substrate 3.
Then, a thermocompression treatment at 200 ° C. for about 10 seconds is performed to ensure the connection between the wiring pattern and the bump, and to ensure the bonding between the semiconductor chip and the insulating substrate. At this time, UV irradiation may be performed simultaneously with heating and pressurization. The thermocompression treatment may be performed at 150 ° C. for 30 seconds and about 250 ° C. for 1 second.

  And the tool T for thermocompression bonding is removed, and the connection is made as shown in FIG.

On the other hand, a multilayered dielectric thin film having a desired refractive index is vapor-deposited on the surface of the quartz plate to form an optical filter as a translucent member made of a glass substrate 8 made of a dielectric interference filter.
Then, an optical filter (8) is attached to the surface of the insulating substrate 3 facing the solid-state imaging element chip mounting surface so as to close the through opening 1.

  Subsequently, a connector 11, a capacitor, a chip component 12 such as a resistor, a control MCM 13 and the like are connected to the insulating substrate 3, and finally the lens barrel 10 is formed as an insulating substrate 3 or an optical filter by an adhesive resin (not shown). The solid-state imaging device shown in FIG. 1 is formed by connecting to the glass substrate 8.

  In the solid-state imaging device formed in this way, the resin can be reliably prevented from flowing out by the wall-shaped UV cured layer 4S formed with a predetermined thickness so as to face the through opening 1. A highly reliable connection is possible.

At the same time as mounting (temporarily fixing) the solid-state imaging device on the wiring pattern, UV irradiation is performed to form a UV curable layer 4S serving as a dam. After temporarily fixing, the electrical connection between the bump and the wiring pattern is achieved by thermocompression bonding. Since the connection and the mechanical joining are performed simultaneously, the productivity is high.
In addition, due to the presence of the dam, it is possible to pressurize after sufficiently heating and improving the fluidity of the resin, enabling a reliable connection and improving the reliability of the connection to the wiring circuit portion of the solid-state imaging device. it can.

Further, when the solid-state imaging device is positioned on the wiring pattern, if it is temporarily fixed using a resin having a high viscosity, a positional shift does not occur during the thermocompression bonding process.
Needless to say, it may be fixed together without temporary fixing.

  In forming the through opening in the insulating substrate, laser processing or the like may be used. Further, the formation of the wiring circuit portion is not limited to the screen printing method, and sputtering or plating may be used.

(Embodiment 2)
A manufacturing process of the solid-state imaging device according to the second embodiment will be described.
In the first embodiment, the glass substrate 8 as the translucent member is formed after mounting the solid-state imaging device chip. In the present embodiment, the glass substrate is mounted first.

Next, a method for manufacturing the solid-state imaging device will be described.
First, as in the first embodiment, a light-shielding insulating substrate 3 is prepared, a through opening 1 is formed, a wiring pattern 2 is formed, and then the through opening 1 of the insulating substrate 3 is formed. The optical filter 3 is stuck on the surface facing the solid-state image sensor chip mounting surface so as to close (FIG. 3A).
Subsequently, as shown in FIG. 3B, the above-described insulating resin is applied so as to cover a part of the wiring pattern of the insulating substrate, and the resin layer 4 is formed.

  Further, as shown in FIG. 3C, as in the first embodiment, the bumps 6 of the solid-state imaging device chip 5 are arranged so as to contact the wiring pattern 2 on the surface of the insulating substrate 3 and slightly pressurized. Then, UV irradiation is performed from the insulating substrate 3 side through the through opening 1 to form a wall-shaped UV cured layer 4S.

  Thereafter, in the same manner as in the first embodiment, as shown in FIG. 3D, the tool T is heated so that the solid-state imaging device chip 5 comes into contact with the wiring pattern 2 on the surface of the insulating substrate 3. While applying pressure.

  Then, the tool T for thermocompression bonding is removed, and connection is made as shown in FIG. 3E, so that the solid-state imaging device shown in FIG. 1 is formed.

Also by this method, as in the first embodiment, since the resin flow can be reliably prevented by the UV cured layer 4S, a reliable and highly reliable connection is possible.
Further, according to this method, in addition to the above effects, the solid-state imaging device chip can be prevented from being contaminated by gas generated when the glass substrate (translucent member) 8 is fixed.

  Further, here, it is desirable to form a through hole leading to the through opening 1 in a part of the optical filter or an optical filter bonding portion so that the internal gas generated when the solid-state imaging device is mounted can be extracted. Other parts are formed in the same manner as in the first embodiment.

(Embodiment 3)
In the above embodiment, the case where a light-shielding insulating substrate is used has been described. In this example, a case where a light-transmitting insulating substrate is used will be described.
In this case, in the UV irradiation process corresponding to FIGS. 2C and 2D and FIGS. 3C and 3D, as shown in FIG. 4, a metal having an opening O in a region corresponding to the through opening is provided. The only difference is that the UV irradiation is performed with the light-shielding mask M attached.
Also by this method, the insulating substrate can be freely selected, and the workability is improved because it is only necessary to attach the light shielding mask.
In this case, the translucent substrate 13 may be a translucent substrate having no through opening.

(Embodiment 4)
In the above embodiment, the hybrid substrate on which the chip components constituting the peripheral circuit are formed is used. However, in this example, a semiconductor substrate such as a silicon substrate on which circuit components are integrated or a silicon substrate is used as a substrate. 23 may be used. A multilayer wiring board may be used as shown in FIG.
As a result, it is possible to reduce the size and mount the chip as a so-called chip size package that performs dicing after mounting.

  Also in manufacturing, a semiconductor substrate 23 formed by forming a desired element region is formed, a solid-state image pickup device substrate and a translucent substrate serving as an optical filter are bonded onto the semiconductor substrate 23, and finally according to a dicing line. It is also possible to obtain a solid-state imaging device by dicing.

(Embodiment 5)
Moreover, in the said embodiment, after forming the through-opening part, the resin layer was formed by application | coating of 1 process, However, in this Embodiment, after apply | coating and forming the photosensitive resin in the area | region corresponding to a through-opening part The through opening is opened, and UV irradiation is performed through the through opening to form a dam composed of the UV curable resist layer 14S, and then the thermosetting resin layer 14H is formed.

  In this state, the solid-state imaging element chip 5 is mounted, and thermocompression bonding is performed in the same manner as the process shown in FIG. That is, as shown in FIG. 6A, a light-sensitive insulating substrate 3 having a thickness of about 100 μm on which a wiring pattern 2 made of a plating layer having a thickness of about 20 μm is formed has a photosensitivity having a thickness of about 50 μm. A photoresist 14R is applied, and the through opening 1 is formed by punching or chemical etching. Here, as the photosensitive resin film, polyimide, epoxy, urethane modified epoxy or the like is used.

And as shown in FIG.6 (b), light irradiation is performed from the back surface side of a light-shielding board | substrate through this through-opening part 1, and the UV hardening layer 14S is formed.
Further, as shown in FIG. 6 (c), a thermosetting resin layer 14N is applied to the inside of the UV cured layer 14S as a dam. As the thermosetting resin layer, epoxy, urethane-modified epoxy or the like is used.

  In this way, the bumps 6 of the solid-state imaging device chip 5 are in contact with the wiring pattern 2 facing the through opening 1 of the insulating substrate 3 in which the UV curable layer 14S is used as a dam and the thermosetting resin layer 14N is formed inside. In the same manner as in the first and second embodiments, thermocompression bonding is performed.

In the solid-state imaging device thus formed, the resin can be reliably prevented from flowing out by the wall-shaped UV cured layer 14 </ b> S formed with a predetermined thickness so as to face the through opening 1. A highly reliable connection is possible.
In this embodiment, the UV curable resin layer and the thermosetting resin layer are separately formed. However, even if the UV curable layer contains some thermosetting substance, better fixing is possible. Become.

(Embodiment 6)
In the fifth embodiment, the UV cured layer is formed by using a light-shielding insulating substrate and irradiating light through a through opening formed in the insulating substrate. Now, an example using a translucent substrate such as a film carrier will be described.
In this method, similar to the first to fourth embodiments, a photosensitive resin tape using a UV curable thermosetting resin is used, and the wiring pattern and the light shielding mask M1 should be joined together as a mask. A pattern of a resin layer having a UV curable layer 19S formed in the region and a resin layer having a thermosetting resin layer formed therein is formed in the bonding region.

First, the wiring pattern 12 which consists of a copper pattern is formed by patterning copper foil using photolithography using the film substrate which stuck copper foil as a starting material. Then, a photosensitive resin tape 19 is attached to the translucent substrate 13.
Then, as shown in FIG. 7A, UV irradiation is performed with a metal light-shielding mask M1 having an opening O in a region corresponding to the bumps of the solid-state imaging device chip.
As a result, as shown in FIG. 7B, the photosensitive resin tape 19 in the region corresponding to the opening O is cured, and a dam composed of the UV cured layer 19S is formed. At this time, the photosensitive resin tape 19 on the wiring pattern 12 is shielded by the wiring pattern 12 and remains as it is as the resin layer 19N.

  In this state, the through-opening 1 is formed by punching, and the resin layer 19N is fluidized well and hardened by thermosetting by mounting the solid-state imaging device chip and thermocompression bonding as in the above embodiment. A joined state is formed.

Also by this method, the insulating substrate can be freely selected, and the workability is improved because it is only necessary to attach the light shielding mask. Further, since the wiring pattern 12 can be used as a light shielding mask and the resin layer on the wiring pattern 12 can be prevented from being UV-cured, a UV-cured layer is formed in a self-aligning manner and a highly reliable connection is realized. It becomes possible.
According to this method, since the wiring pattern is used as a part of the mask, a high degree of mask accuracy is unnecessary, and a highly accurate fine pattern structure can be easily formed.

  Although the through opening is formed by punching, this through opening may be unnecessary. In this case, a hole may be formed in the resin tape corresponding to the region corresponding to the through opening.

  In the embodiments, an optical filter is used as the translucent member. However, the optical filter is not limited to the optical filter, and a translucent sealing member, a lens, and the like can be appropriately modified.

  Although the solid-state imaging device chip has been described in the above embodiment, it is needless to say that the present invention is not limited to this and can be applied to a semiconductor chip that requires hollow mounting, such as a normal IC chip. .

  In the solid-state imaging device of the present invention, the UV cured layer formed by UV irradiation from the through-opening is used as a dam, and electrical connection and mechanical connection are realized simultaneously by thermocompression bonding. Because it is good and reliable, the camera is not limited to the optical communication field, but can be applied to various optical devices such as reading elements such as CD and DVD, reading elements of copiers, medical equipment and door phones. Is possible.

It is sectional drawing which shows the solid-state imaging device in the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the solid-state imaging device of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the solid-state imaging device of the 2nd Embodiment of this invention. It is sectional drawing which shows the solid-state imaging device in the 3rd Embodiment of this invention. It is sectional drawing which shows the solid-state imaging device in the 4th Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the solid-state image device of this Embodiment 5. It is sectional drawing which shows the manufacturing process of the solid-state imaging device of this Embodiment 6. It is principal part explanatory drawing which shows the solid-state imaging device of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Through opening part 2 Wiring pattern 3 Insulating board | substrate 4 Resin layer 4S UV hardening layer 4H Thermosetting layer 5 Solid-state image sensor 6 Bump 8 Optical filter (translucent member)
10 Lens tube

Claims (13)

A substrate having a through opening and a wiring circuit portion;
Comprising a solid-state imaging device attached to the through opening,
The solid-state imaging device is electrically connected to the wiring circuit portion of the substrate;
The periphery of this electrically connected part is fixed via a resin layer,
Of the resin layer, the region facing the through opening is photocured in a wall shape,
A solid-state imaging device in which the remaining region is thermally cured. The solid-state imaging device according to claim 1,
Comprising a translucent member disposed so as to close the through opening at a predetermined interval from the solid-state imaging device;
The substrate is an insulating substrate;
The wiring circuit portion has a wiring pattern in which a part of the wiring circuit portion is exposed to a portion where the solid-state imaging device is mounted on the insulating substrate.
The solid-state imaging device, wherein the solid-state imaging device is directly connected face-down to the wiring pattern of the circuit unit. The solid-state imaging device according to claim 1 or 2,
The solid-state imaging device, wherein the substrate is a light-shielding substrate. The solid-state imaging device according to any one of claims 1 to 3,
The resin layer is a solid-state imaging device composed of a resin having ultraviolet (UV) curability and thermosetting. The solid-state imaging device according to claim 4,
The resin layer is a solid-state imaging device composed of a thermosetting acrylic resin to which ultraviolet curing is added. The solid-state imaging device according to claim 4,
The resin layer is a solid-state imaging device composed of a thermosetting epoxy resin to which UV curing is added. The solid-state imaging device according to claim 1,
The solid-state imaging device, wherein the substrate is a semiconductor substrate on which a signal processing circuit is integrated. Forming a resin layer on a substrate having a through-opening in a central part and having a wiring circuit part so as to face the through-opening;
A solid-state image sensor mounting step of mounting the solid-state image sensor via the resin layer;
Irradiating ultraviolet rays from the substrate side through the through opening, curing a region of the resin layer formed to face the through opening, and forming a UV cured layer;
Manufacturing the solid-state imaging device including a step of heating the resin layer while applying pressure so that the solid-state imaging element and the wiring circuit unit are electrically connected, and thermocompression-bonding the solid-state imaging element to the wiring circuit unit Method. It is a manufacturing method of the solid-state imaging device according to claim 8,
After the thermocompression bonding step,
And a translucent member mounting step of mounting a translucent member so as to close the through opening of the substrate. It is a manufacturing method of the solid-state imaging device according to claim 8,
Prior to the solid-state image sensor mounting step,
A method for manufacturing a solid-state imaging device, comprising: a translucent member mounting step of mounting a translucent member so as to close a through opening of the substrate having a wiring layer. It is a manufacturing method of the solid-state image sensing device according to any one of claims 8 to 10,
The method for manufacturing a solid-state imaging device, wherein the substrate is a light-shielding substrate. It is a manufacturing method of the solid-state image sensing device according to any one of claims 8 to 10,
The substrate is a translucent substrate,
Prior to the step of forming the UV cured layer, a method of manufacturing a solid-state imaging device including a step of mounting a light-shielding member having an opening at a position corresponding to the through opening on the substrate. It is a manufacturing method of the solid-state imaging device according to claim 12,
The step of forming the UV cured layer includes a step of performing UV irradiation using a light-shielding member opening at a joint portion of the wiring circuit portion as a mask, and UV curing at least a part of the wiring circuit portion as a mask in a self-aligning manner A method for manufacturing a solid-state imaging device.

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