JPH11220115A - Manufacture of solid-state image-pickup device - Google Patents
Manufacture of solid-state image-pickup deviceInfo
- Publication number
- JPH11220115A JPH11220115A JP10019329A JP1932998A JPH11220115A JP H11220115 A JPH11220115 A JP H11220115A JP 10019329 A JP10019329 A JP 10019329A JP 1932998 A JP1932998 A JP 1932998A JP H11220115 A JPH11220115 A JP H11220115A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state imaging
- imaging device
- light
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体撮像装置の製
造方法に係り、特に、絶縁基体上にフェースダウン方式
で装着した固体撮像素子と絶縁基体との隙間部をシール
する封止樹脂の形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solid-state imaging device, and more particularly, to a method of forming a sealing resin for sealing a gap between a solid-state imaging element mounted on an insulating substrate in a face-down manner and the insulating substrate. It is about the method.
【０００２】[0002]
【従来の技術】図３は、従来の製造方法を示したもので
ある。図３において、１は開口部１ａおよび接続導体２
を有する回路基板で、例えばガラスエポキシ基材等から
なる多層配線基板である。３は突起電極４を有する固体
撮像素子で、その受光面３ａを開口部１ａに位置合わせ
して、フェースダウン方式で回路基板１に装着する。そ
の後、固体撮像素子３の信頼性を高めるために、固体撮
像素子３の周縁部と回路基板１との隙間部に加熱硬化型
の封止樹脂５を樹脂注入ノズル６により注入し、加熱硬
化する。2. Description of the Related Art FIG. 3 shows a conventional manufacturing method. 3, reference numeral 1 denotes an opening 1a and a connection conductor 2;
Is a multilayer wiring board made of, for example, a glass epoxy base material. Reference numeral 3 denotes a solid-state imaging device having a protruding electrode 4, whose light-receiving surface 3a is aligned with the opening 1a, and mounted on the circuit board 1 in a face-down manner. Thereafter, in order to improve the reliability of the solid-state imaging device 3, a thermosetting sealing resin 5 is injected into a gap between the peripheral portion of the solid-state imaging device 3 and the circuit board 1 by a resin injection nozzle 6, and is heat-cured. .
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記の
ような従来の製造方法では、封止樹脂５の注入および加
熱硬化時に、図３のＡ部を拡大して示した図４のよう
に、封止樹脂５が固体撮像素子３の受光面３ａの方へ流
動する。なお、２ａは固体撮像素子３の突起電極４が接
続される回路基板１の接続電極である。ここで、回路基
板１の開口縁部と固体撮像素子３の受光面３ａとの距離
は、数十ないし数百ミクロンと極めて短いため、封止樹
脂５が受光面３ａ上まで流れ出て、受光面３ａに形成さ
れているマイクロレンズを覆い、品質の劣化を招くとい
う問題があった。However, in the conventional manufacturing method as described above, when the sealing resin 5 is injected and cured by heating, as shown in FIG. The sealing resin 5 flows toward the light receiving surface 3a of the solid-state imaging device 3. Reference numeral 2a denotes a connection electrode of the circuit board 1 to which the projection electrode 4 of the solid-state imaging device 3 is connected. Here, since the distance between the opening edge of the circuit board 1 and the light receiving surface 3a of the solid-state imaging device 3 is extremely short, several tens to several hundreds of microns, the sealing resin 5 flows out onto the light receiving surface 3a and the light receiving surface 3a. There is a problem that the microlens formed on the substrate 3a is covered and the quality is deteriorated.
【０００４】そこで、図５に示したように、回路基板１
の開口縁部に突起(堤防)７を設け、封止樹脂５が固体撮
像素子３と回路基板１の隙間部から受光面３ａの方へ流
れ出るのを防止することが考えられるが、回路基板上に
微細な突起物を形成することは極めて困難であると同時
に、封止樹脂５の流動性(粘度)のばらつき等により、封
止樹脂５の受光面３ａへの流出を確実に抑えることは実
質上無理である。[0004] Therefore, as shown in FIG.
It is conceivable to provide a projection (dyke) 7 at the opening edge of the substrate to prevent the sealing resin 5 from flowing out from the gap between the solid-state imaging device 3 and the circuit board 1 toward the light receiving surface 3a. It is extremely difficult to form fine projections on the surface, and at the same time, it is substantially impossible to reliably suppress the outflow of the sealing resin 5 to the light receiving surface 3a due to variations in the fluidity (viscosity) of the sealing resin 5. It is impossible.
【０００５】本発明は、このような従来技術の問題点を
解決するもので、固体撮像素子と回路基板との隙間部に
注入した封止樹脂が固体撮像素子の受光面側へ流動する
のをなくし、高品質を維持するようにした固体撮像装置
の製造方法を提供することを目的とする。The present invention solves such a problem of the prior art, and prevents the sealing resin injected into the gap between the solid-state image sensor and the circuit board from flowing toward the light receiving surface of the solid-state image sensor. It is an object of the present invention to provide a method for manufacturing a solid-state imaging device that eliminates the problem and maintains high quality.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の固体撮像装置の製造方法は、開口部およ
び接続導体を有する絶縁基体の一方の面に、突起電極を
有する固体撮像素子を、その受光面を前記開口部に位置
合わせしてフェースダウン方式で装着する工程と、前記
絶縁基体の他方の面から開口部を通して前記固体撮像素
子の受光面に紫外線を照射しながら、前記固体撮像素子
の周縁部と前記絶縁基体との隙間部に紫外線硬化型また
は紫外線・熱両用硬化型の封止樹脂を注入し、その封止
樹脂が前記固体撮像素子受光面側に流動しようとする少
なくともその先端部を紫外線により硬化する工程と、塗
布した前記封止樹脂の全体を、紫外線または熱により本
硬化する工程とからなることを特徴とするものである。In order to achieve the above object, a method of manufacturing a solid-state imaging device according to the present invention is directed to a solid-state imaging device having a projection electrode on one surface of an insulating base having an opening and a connecting conductor. A step of mounting the device in a face-down manner with its light receiving surface aligned with the opening, and irradiating the light receiving surface of the solid-state imaging device with ultraviolet light through the opening from the other surface of the insulating base, An ultraviolet-curing or ultraviolet- and heat-curable sealing resin is injected into the gap between the peripheral portion of the solid-state imaging device and the insulating base, and the sealing resin tends to flow toward the light-receiving surface of the solid-state imaging device. It is characterized by comprising a step of curing at least the tip portion with ultraviolet rays and a step of fully curing the applied sealing resin as a whole with ultraviolet rays or heat.
【０００７】上記の製造方法によれば、固体撮像素子の
周縁部と絶縁基体との隙間部に注入した紫外線硬化型ま
たは紫外線・熱両用硬化型の封止樹脂が流動しようとす
るのを、固体撮像素子の受光面に至る手前で確実にその
先端部を紫外線により硬化するので、その硬化した先端
部が堤となってそれ以上の流出はなく、したがって、固
体撮像素子の受光面が封止樹脂で汚染されるのを確実に
防止できる。According to the above-described manufacturing method, the solidification of the ultraviolet-curing type or the ultraviolet- and heat-curing type sealing resin injected into the gap between the peripheral portion of the solid-state imaging device and the insulating substrate is prevented from flowing. The leading end of the solid-state image sensor is cured by ultraviolet light before reaching the light-receiving surface of the image sensor. Contamination can be reliably prevented.
【０００８】ここで、絶縁基体として、ガラスエポキシ
基板やセラミック基板からなる配線基板、あるいは、樹
脂成形パッケージを使用することができる。また、開口
部を通して紫外線を照射する際、所要のエリアのみ照射
するように遮光マスクを用いると、固体撮像素子の外形
や受光部のサイズが変わった場合でも、紫外線の照射エ
リアを容易に調整することができる。Here, a wiring board made of a glass epoxy board or a ceramic board, or a resin molded package can be used as the insulating base. In addition, when irradiating ultraviolet rays through the opening, a light-shielding mask is used to irradiate only a required area, so that even when the outer shape of the solid-state imaging device or the size of the light receiving unit changes, the irradiating area of the ultraviolet rays can be easily adjusted. be able to.
【０００９】また、絶縁基体の構造により、外部から不
要な光が入射してフレアー等の性能劣化が生ずる場合
は、封止樹脂の上、あるいは固体撮像素子の裏面全体を
含めて遮光性樹脂で覆うことにより、不要光の入射を防
止することができる。In the case where unnecessary light is incident from the outside due to the structure of the insulating base and performance deterioration such as flare occurs, light-shielding resin is used on the sealing resin or on the entire back surface of the solid-state imaging device. Covering can prevent incidence of unnecessary light.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照しながら詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１１】(実施の形態１)図１は、本発明の実施の形
態１における固体撮像装置の製造方法を示したものであ
る。なお、従来例と同一構成要素には同一符号を付して
ある。すなわち、図１(ａ)において、１は回路基板で、
例えば、ガラスエポキシ基板、あるいはセラミック基板
からなり、開口部１ａが形成されている。２は回路基板
１の表面や内部に設けられた接続導体、２ａはそのうち
の接続電極である。３は固体撮像素子で、突起電極４を
有し、受光面３ａを回路基板１の開口部１ａに位置合わ
せして、回路基板１にフェースダウン方式で装着する。
装着は、突起電極４を回路基板１の接続電極２ａに接合
して行い、その接合方法としては、超音波接合、導電接
着剤による接着、はんだ接合、あるいは、Ａｕバンプと
はんだ接合の併用などが適用される。固体撮像素子３の
回路基板１への装着までは従来と同じである。(Embodiment 1) FIG. 1 shows a method of manufacturing a solid-state imaging device according to Embodiment 1 of the present invention. The same components as those in the conventional example are denoted by the same reference numerals. That is, in FIG. 1A, 1 is a circuit board,
For example, the opening 1a is formed of a glass epoxy substrate or a ceramic substrate. Reference numeral 2 denotes a connection conductor provided on the surface or inside of the circuit board 1, and reference numeral 2a denotes a connection electrode. Reference numeral 3 denotes a solid-state imaging device having a protruding electrode 4, and a light receiving surface 3 a is aligned with the opening 1 a of the circuit board 1 and mounted on the circuit board 1 in a face-down manner.
The mounting is performed by bonding the protruding electrode 4 to the connection electrode 2a of the circuit board 1. The bonding method includes ultrasonic bonding, bonding using a conductive adhesive, solder bonding, or a combination of Au bump and solder bonding. Applied. The operation up to the mounting of the solid-state imaging device 3 on the circuit board 1 is the same as the conventional one.
【００１２】次に、図１(ｂ)に示したように、固体撮像
素子３の周縁部と回路基板１との隙間部に封止樹脂を注
入するに際、本実施の形態では、開口部１ａを通して固
体撮像素子３の受光面３ａに、紫外線発生装置１１によ
り紫外線１２を照射しながら、樹脂注入ノズル６により
紫外線・熱両用硬化型封止樹脂１５を注入する。なお、
紫外線１２を照射するときは、所要のエリアのみ照射す
るように遮光マスク１３を使用する。Next, as shown in FIG. 1B, when the sealing resin is injected into the gap between the peripheral portion of the solid-state imaging device 3 and the circuit board 1, the opening in the present embodiment is used. While irradiating the light receiving surface 3a of the solid-state imaging device 3 with the ultraviolet light 12 by the ultraviolet light generator 11 through the 1a, the resin injection nozzle 6 injects the ultraviolet / thermosetting sealing resin 15. In addition,
When irradiating ultraviolet rays 12, a light-shielding mask 13 is used so as to irradiate only a required area.
【００１３】紫外線・熱両用硬化型封止樹脂１５は、紫
外線の照射および加熱の何れでも硬化する特性を有し、
かつ、狭い隙間でも容易に浸入するように、ある程度の
流動性を持たせている。したがって、樹脂注入ノズル６
により固体撮像素子３の周縁部付近に注入した紫外線・
熱両用硬化型封止樹脂１５は、固体撮像素子３と回路基
板１との隙間部に入り込み、固体撮像素子３の受光面３
ａ方向へ流動する。そこで、その先端部に紫外線１２が
当たると、瞬時に硬化して流動性がなくなり、それ以
上、受光面３ａ側への移動はない。The ultraviolet / heat curable sealing resin 15 has a property of being cured by irradiation of ultraviolet rays and heating.
In addition, it has a certain degree of fluidity so that it can easily enter even a narrow gap. Therefore, the resin injection nozzle 6
UV light injected near the periphery of the solid-state imaging device 3
The thermosetting sealing resin 15 enters the gap between the solid-state imaging device 3 and the circuit board 1 and the light-receiving surface 3 of the solid-state imaging device 3
It flows in the a direction. Then, when the ultraviolet rays 12 are applied to the tip portion, it is instantaneously cured and loses fluidity, and there is no further movement to the light receiving surface 3a side.
【００１４】所定の量の紫外線・熱両用硬化型封止樹脂
１５を注入した後、図１(ｃ)に示したように、例えば電
気炉等の加熱手段１６で加熱することにより、紫外線・
熱両用硬化型封止樹脂１５の全体を本硬化する。After injecting a predetermined amount of the ultraviolet / thermosetting sealing resin 15, as shown in FIG.
The entire thermosetting sealing resin 15 is fully cured.
【００１５】なお、加熱硬化の代りに、固体撮像素子３
側から紫外線を照射して光硬化させてもよい。さらに、
本硬化を紫外線で行う場合は、紫外線のみで硬化する封
止樹脂を用いればよいことは言うまでもない。It should be noted that the solid-state imaging device 3
Ultraviolet light may be applied from the side to perform photocuring. further,
When the main curing is performed with ultraviolet rays, it goes without saying that a sealing resin that can be cured only with ultraviolet rays may be used.
【００１６】さらに、不要光が固体撮像素子３の受光面
３ａに入る回路基板構成の場合は、図１(ｄ)に示したよ
うに、紫外線・熱両用硬化型封止樹脂１５の上から、あ
るいは、紫外線・熱両用硬化型封止樹脂１５と固体撮像
素子３の裏面全体を遮光性樹脂１７で覆うようにする。
この遮光性樹脂１７は、紫外線硬化型、熱硬化型、紫外
線・熱両用硬化型の樹脂の何れでもよい。また、塗布方
法としては、ディスペンスや噴霧(スプレー)、その他ど
のような方法でもよい。Further, in the case of a circuit board configuration in which unnecessary light enters the light receiving surface 3a of the solid-state imaging device 3, as shown in FIG. Alternatively, the entire back surface of the ultraviolet / heat curable sealing resin 15 and the solid-state imaging device 3 is covered with the light-shielding resin 17.
The light-shielding resin 17 may be any of an ultraviolet curable resin, a thermosetting resin, and an ultraviolet / heat curable resin. The application method may be dispensing, spraying, or any other method.
【００１７】上記本実施の形態１の製造方法によれば、
固体撮像素子３の周縁部と回路基板１との隙間部に注入
した紫外線・熱両用硬化型封止樹脂１５が固体撮像素子
３の受光面３ａに至る手前で紫外線１２により硬化する
ので、その硬化した先端部が堤となってそれ以上の流出
はなく、したがって、固体撮像素子の受光面３ａが封止
樹脂で汚染されるのを確実に防止できる。According to the manufacturing method of the first embodiment,
The ultraviolet / thermosetting sealing resin 15 injected into the gap between the peripheral edge of the solid-state imaging device 3 and the circuit board 1 is cured by the ultraviolet light 12 before reaching the light receiving surface 3a of the solid-state imaging device 3, so that the curing is performed. The formed tip portion serves as a bank and does not flow out any more. Therefore, it is possible to reliably prevent the light receiving surface 3a of the solid-state imaging device from being contaminated with the sealing resin.
【００１８】また、紫外線１２を照射する際、所要のエ
リアのみ照射するように遮光マスク１３を用いるので、
照射エリアを任意に設定することができ、紫外線・熱両
用硬化型封止樹脂１５の流動を適切な位置で止めること
ができる。また、固体撮像素子の外形や受光部のサイズ
が変わった場合でも、容易かつ迅速に対応することが可
能になる。When irradiating the ultraviolet rays 12, the light shielding mask 13 is used so as to irradiate only a required area.
The irradiation area can be set arbitrarily, and the flow of the ultraviolet / heat curable sealing resin 15 can be stopped at an appropriate position. Further, even when the outer shape of the solid-state imaging device or the size of the light receiving unit changes, it is possible to easily and quickly cope with the change.
【００１９】(実施の形態２)図２は、本発明の実施の形
態２における固体撮像装置の製造方法を示したもので、
実施の形態１と同一構成要素には同一符号を付してあ
る。ここでは、絶縁基体として樹脂成形パッケージ２１
を使用した点が異なる。(Embodiment 2) FIG. 2 shows a method of manufacturing a solid-state imaging device according to Embodiment 2 of the present invention.
The same components as those in the first embodiment are denoted by the same reference numerals. Here, the resin molded package 21 is used as an insulating base.
Is different.
【００２０】まず、図２(ａ)に示したように、実施の形
態１と同様に、開口部２１ａと接続導体２２を有する樹
脂成形パッケージ２１の所定の位置に、突起電極４を有
する固体撮像素子３を、その受光面３ａを開口部２１ａ
に位置合わせしてフェースダウン方式で装着する。First, as shown in FIG. 2A, similarly to the first embodiment, a solid-state imaging device having a protruding electrode 4 at a predetermined position of a resin molded package 21 having an opening 21a and a connection conductor 22 is provided. The element 3 is connected to the light receiving surface 3a by the opening 21a.
Attach to face down method
【００２１】次に、図２(ｂ)に示したように、樹脂成形
パッケージ２１の開口部２１ａを通して固体撮像素子３
の受光面３ａに、紫外線発生装置１１により紫外線１２
を照射しながら、固体撮像素子３の周縁部と樹脂成形パ
ッケージ２１との隙間部に紫外線・熱両用硬化型封止樹
脂１５を注入し、その紫外線・熱両用硬化型封止樹脂１
５が固体撮像素子３の受光面３ａ側に流動しようとする
少なくともその先端部を紫外線１２により硬化する。Next, as shown in FIG. 2B, the solid-state imaging device 3 is passed through the opening 21a of the resin molded package 21.
On the light receiving surface 3a of the
Is injected into the gap between the resin molding package 21 and the peripheral portion of the solid-state imaging device 3, and the ultraviolet / thermosetting sealing resin 15 is injected.
At least the front end of the solid-state imaging device 3 which is about to flow toward the light-receiving surface 3a of the solid-state imaging device 3 is hardened by ultraviolet rays 12.
【００２２】次いで、図２(ｃ)に示したように、塗布し
た紫外線・熱両用硬化型封止樹脂１５の全体を、紫外線
または熱により本硬化する。Next, as shown in FIG. 2 (c), the whole of the applied ultraviolet / thermosetting sealing resin 15 is fully cured by ultraviolet rays or heat.
【００２３】さらに、図２(ｄ)に示したように、必要な
らば、紫外線・熱両用硬化型封止樹脂１５の上から、遮
光性樹脂１７を塗布、硬化する。Further, as shown in FIG. 2 (d), if necessary, a light-shielding resin 17 is applied and cured from above the ultraviolet- and heat-curable sealing resin 15.
【００２４】このように、本実施の形態２の製造方法に
おいても、固体撮像素子の受光面３ａが封止樹脂で汚染
されるのを確実に防止できる。そして、成形パッケージ
２１に固体撮像素子３を装着し、封止樹脂を形成したも
のは、超小型の固体撮像ユニットとして、各種画像入力
装置等に手軽に利用することができる。As described above, also in the manufacturing method according to the second embodiment, it is possible to reliably prevent the light receiving surface 3a of the solid-state imaging device from being contaminated with the sealing resin. The solid-state imaging device 3 mounted on the molded package 21 and formed with a sealing resin can be easily used as an ultra-small solid-state imaging unit in various image input devices and the like.
【００２５】[0025]
【発明の効果】以上説明したように、本発明によれば、
開口部を有する絶縁基体に、突起電極を有する固体撮像
素子をフェースダウン方式で装着し、その固体撮像素子
の周縁部と絶縁基体との隙間部をシールするための封止
樹脂を注入する際、絶縁基体の開口部を通して固体撮像
素子の受光面に紫外線を照射しながら、紫外線硬化型ま
たは紫外線・熱両用硬化型の封止樹脂を注入することに
より、その封止樹脂の流動する先端部が紫外線を照射さ
れて固体撮像素子の受光面に至る手前で確実に紫外線硬
化するので、その硬化した先端部が堤となってそれ以上
の流出はなく、したがって、固体撮像素子の受光面が封
止樹脂で汚染されるのを確実に防止することができる。As described above, according to the present invention,
When mounting a solid-state imaging device having a protruding electrode in a face-down manner on an insulating base having an opening, and injecting a sealing resin for sealing a gap between a peripheral portion of the solid-state imaging device and the insulating base, By irradiating ultraviolet rays to the light-receiving surface of the solid-state imaging device through the opening of the insulating base and injecting an ultraviolet-curing type or an ultraviolet / thermosetting type sealing resin, the leading end of the sealing resin flows with ultraviolet rays. Irradiation of the solid-state image sensor ensures that it hardens with ultraviolet light before reaching the light-receiving surface of the solid-state image sensor. Contamination can be reliably prevented.
【図１】本発明の実施の形態１における固体撮像装置の
製造方法を示す工程断面図FIG. 1 is a process sectional view illustrating a method for manufacturing a solid-state imaging device according to Embodiment 1 of the present invention;
【図２】本発明の実施の形態２における固体撮像装置の
製造方法を示す工程断面図FIG. 2 is a process sectional view illustrating the method for manufacturing the solid-state imaging device according to Embodiment 2 of the present invention.
【図３】従来例における固体撮像装置の製造方法を示す
図FIG. 3 is a diagram showing a method of manufacturing a solid-state imaging device in a conventional example.
【図４】図３のＡ部の拡大図FIG. 4 is an enlarged view of a portion A in FIG. 3;
【図５】図４の改良型を示す図5 shows an improved version of FIG.
１ 回路基板 １ａ，２１ａ 開口部 ２，２２ 接続導体 ２ａ 接続電極 ３ 固体撮像素子 ３ａ 受光面 ４ 突起電極 ６ 樹脂注入ノズル １１ 紫外線発生装置 １２ 紫外線 １３ 遮光マスク １５ 紫外線・熱両用硬化型封止樹脂 １６ 加熱手段 １７ 遮光性樹脂 ２１ 樹脂成形パッケージ DESCRIPTION OF SYMBOLS 1 Circuit board 1a, 21a Opening part 2, 22 Connection conductor 2a Connection electrode 3 Solid-state image sensor 3a Light-receiving surface 4 Projection electrode 6 Resin injection nozzle 11 Ultraviolet generator 12 Ultraviolet 13 Light-shielding mask 15 Ultraviolet and heat curable sealing resin 16 Heating means 17 Light-shielding resin 21 Resin molded package
───────────────────────────────────────────────────── フロントページの続き (72)発明者 笹木 定志 神奈川県横浜市港北区綱島東四丁目３番１ 号 松下通信工業株式会社内 (72)発明者 大谷 博之 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 西田 一人 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 東 和司 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Satoshi Sasaki 4-3-1 Tsunashima Higashi, Kohoku-ku, Yokohama-shi, Kanagawa Prefecture Inside Matsushita Communication Industrial Co., Ltd. Matsushita Electric Industrial Co., Ltd. (72) Inventor Kazuto Nishida 1006 Kazuma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd.
Claims (5)
の一方の面に、突起電極を有する固体撮像素子を、その
受光面を前記開口部に位置合わせしてフェースダウン方
式で装着する工程と、 前記絶縁基体の他方の面から開口部を通して前記固体撮
像素子の受光面に紫外線を照射しながら、前記固体撮像
素子の周縁部と前記絶縁基体との隙間部に紫外線硬化型
または紫外線・熱両用硬化型の封止樹脂を注入し、その
封止樹脂が前記固体撮像素子受光面側に流動しようとす
る少なくともその先端部を紫外線により硬化する工程
と、 塗布した前記封止樹脂の全体を、紫外線または熱により
本硬化する工程とからなることを特徴とする固体撮像装
置の製造方法。A step of mounting a solid-state imaging device having a protruding electrode on one surface of an insulating base having an opening and a connecting conductor in a face-down manner with its light-receiving surface aligned with the opening; While irradiating ultraviolet rays to the light receiving surface of the solid-state imaging device through the opening from the other surface of the insulating base, an ultraviolet curing type or ultraviolet / thermo curing is applied to a gap between the periphery of the solid-state imaging device and the insulating base. A step of injecting a mold sealing resin, curing the sealing resin with ultraviolet rays at least at the end thereof where the sealing resin is about to flow to the light receiving surface side of the solid-state imaging device; And a step of fully curing by heat.
徴とする請求項１記載の固体撮像装置の製造方法。2. The method according to claim 1, wherein the insulating base is made of a wiring board.
ることを特徴とする請求項１記載の固体撮像装置の製造
方法。3. The method according to claim 1, wherein the insulating base is formed of a resin molded package.
要のエリアのみ照射するように遮光マスクを用いること
を特徴とする請求項１記載の固体撮像装置の製造方法。4. The method of manufacturing a solid-state imaging device according to claim 1, wherein when irradiating the ultraviolet rays through the opening, a light-shielding mask is used so as to irradiate only a required area.
塗布、硬化する工程を有することを特徴とする請求項１
記載の固体撮像装置の製造方法。5. The method according to claim 1, further comprising a step of applying and curing a light-shielding resin from above the sealing resin.
A manufacturing method of the solid-state imaging device according to the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01932998A JP3648721B2 (en) | 1998-01-30 | 1998-01-30 | Method for manufacturing solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01932998A JP3648721B2 (en) | 1998-01-30 | 1998-01-30 | Method for manufacturing solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11220115A true JPH11220115A (en) | 1999-08-10 |
| JP3648721B2 JP3648721B2 (en) | 2005-05-18 |
Family
ID=11996383
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01932998A Expired - Fee Related JP3648721B2 (en) | 1998-01-30 | 1998-01-30 | Method for manufacturing solid-state imaging device |
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| Country | Link |
|---|---|
| JP (1) | JP3648721B2 (en) |
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