JP2005303213A - Solid-state imaging device - Google Patents

Solid-state imaging device Download PDF

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Publication number
JP2005303213A
JP2005303213A JP2004120953A JP2004120953A JP2005303213A JP 2005303213 A JP2005303213 A JP 2005303213A JP 2004120953 A JP2004120953 A JP 2004120953A JP 2004120953 A JP2004120953 A JP 2004120953A JP 2005303213 A JP2005303213 A JP 2005303213A
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Prior art keywords
solid
imaging device
state imaging
sealing resin
state
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JP2005303213A5 (en
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Kojiro Nakamura
浩二郎 中村
Takahiko Yagi
能彦 八木
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2004120953A priority Critical patent/JP2005303213A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant

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  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device that can achieve excellent imaging quality without contaminating the imaging surface and improve a production yield, thus increasing productivity. <P>SOLUTION: On the inner surface of a circuit substrate 14, a dent 16 that is larger in area than the imaging area 12 is formed, due to which a space h1 between the solid-state imaging device 11 and the circuit substrate 14 becomes large, thus resulting in elimination of a capillary phenomenon, which keeps sealing resin 19 from entering the imaging surface 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、撮像素子として半導体からなる固体撮像素子を用い、被写体に対応する映像信号を生成する固体撮像装置に関するものである。   The present invention relates to a solid-state imaging device that uses a solid-state imaging device made of a semiconductor as an imaging device and generates a video signal corresponding to a subject.

従来から、被写体に対応する映像信号を生成する撮像装置として、撮像素子に半導体からなる固体撮像素子を用いた固体撮像装置があり、この固体撮像装置は、通常、固体撮像素子をパッケージ内に収容して、その後、保護用のガラス板でカバーして製造されている。   Conventionally, as an imaging device that generates a video signal corresponding to a subject, there is a solid-state imaging device using a solid-state imaging device made of a semiconductor as an imaging device, and this solid-state imaging device usually houses a solid-state imaging device in a package. Then, it is manufactured by covering with a protective glass plate.

以上のような従来の固体撮像装置について、以下に説明する。
図６は従来の固体撮像装置の固体撮像素子がパッケージに収容されたワイヤボンディング方式による構成を示す縦断面図である。この固体撮像装置１００は、図６に示すように、セラミックスのパッケージ１０８の底に、撮像面１０２を上にして固体撮像素子１０１を、接着剤１０５でダイボンディングし、配線回路（図示を省略）との間を例えば金ワイヤ１０６でワイヤボンディングして電気的に接続した後、気体を封じ込め保護用のガラス板１０４を封止樹脂１０９で取り付けて作製されている。この封止樹脂１０９は接着剤を兼ねるものであり、パッケージ１０８にはプラスチックスによるものも存在する。 The conventional solid-state imaging device as described above will be described below.
FIG. 6 is a longitudinal sectional view showing a configuration by a wire bonding method in which a solid-state imaging device of a conventional solid-state imaging device is accommodated in a package. As shown in FIG. 6, the solid-state imaging device 100 is die-bonded to the bottom of a ceramic package 108 with the imaging surface 102 facing upward with an adhesive 105 and a wiring circuit (not shown). For example, the glass plate 104 is electrically bonded by wire bonding with a gold wire 106, and then a glass plate 104 for protecting the gas is attached with a sealing resin 109. The sealing resin 109 also serves as an adhesive, and the package 108 is made of plastic.

しかし、固体撮像装置は、近年、デジタルカメラや携帯電話用小型カメラ、その他に多用されるに伴って、薄型化、小型化、また低コスト化が要請されるようになり、ワイヤボンディング方式ではなく、回路基板に対して固体撮像素子をフェイスダウンした状態で接続するフリップチップ方式によって製造されるようになっている。   However, as solid-state imaging devices have been frequently used in recent years for digital cameras, small cameras for mobile phones, and the like, thinning, miniaturization, and cost reduction have been demanded. The flip-chip method is used in which a solid-state imaging device is connected face-down to a circuit board.

図７はフリップチップ方式によって固体撮像素子が回路基板にフェイスダウンした状態で接続された固体撮像装置を示す縦断面図である。図７に示す固体撮像装置２００において、２０１は開口部２０２および接続導体２０３を有する回路基板で、例えばガラスエポキシ基材等からなる多層配線基板である。２０４は突起電極２０７を有する固体撮像素子で、その撮像面２０５を開口部２０２に位置合わせして、フェイスダウン方式で回路基板２０１に装着する。   FIG. 7 is a longitudinal sectional view showing a solid-state imaging device in which the solid-state imaging device is connected to the circuit board in a flip-chip manner in a face-down state. In the solid-state imaging device 200 shown in FIG. 7, reference numeral 201 denotes a circuit board having an opening 202 and a connection conductor 203, which is a multilayer wiring board made of, for example, a glass epoxy base material. Reference numeral 204 denotes a solid-state imaging device having a projecting electrode 207. The imaging surface 205 is aligned with the opening 202 and attached to the circuit board 201 by a face-down method.

その後、固体撮像素子２０４の信頼性を高めるために、固体撮像素子２０４の周縁部と回路基板２０１との間隙に封止樹脂２０８を注入し加熱硬化する。しかし、突起電極２０７および接続導体２０３によって定まる固体撮像素子２０４と回路基板２０１との間隙ｈ０は０．０３〜０．１ｍｍと小さいので、硬化処理の過程で未硬化の低粘度の封止樹脂２０８が、毛細管現象によって内部へ浸入し固体撮像素子２０４の撮像面２０５に至って、この撮像面２０５を汚染し易い。   Thereafter, in order to increase the reliability of the solid-state imaging device 204, the sealing resin 208 is injected into the gap between the peripheral edge of the solid-state imaging device 204 and the circuit board 201, and is cured by heating. However, since the gap h0 between the solid-state imaging device 204 and the circuit board 201 determined by the protruding electrode 207 and the connection conductor 203 is as small as 0.03 to 0.1 mm, the uncured low-viscosity sealing resin 208 is uncured during the curing process. However, it penetrates into the inside by capillary action and reaches the imaging surface 205 of the solid-state imaging device 204, and this imaging surface 205 is easily contaminated.

そのために、封止樹脂２０８の塗布プロセスは、塗布量の厳密な管理を必要としている。
これに対して、絶縁基体上にフェイスダウン方式で装着した固体撮像素子と絶縁基体との間隙部をシールする封止樹脂の形成方法（例えば、特許文献１を参照）が提案されている。 Therefore, the application process of the sealing resin 208 requires strict management of the application amount.
On the other hand, a method of forming a sealing resin that seals the gap between the solid-state imaging device mounted on the insulating substrate in a face-down manner and the insulating substrate (see, for example, Patent Document 1) has been proposed.

図８はその製造方法を示したフロー図である。まず、図８（ａ）に示すように、回路基板３０１に接続導体３０３および突起電極３０７を介して固体撮像素子３０４を装着し、次に、図８（ｂ）に示すように、回路基板３０１の固体撮像素子３０４の装着面とは反対側から、遮光マスク３１２を介して開口部３０２を通して、固体撮像素子３０４の撮像面３０５に対して、紫外線発生装置３１１で生成した紫外線３０９を照射しながら、固体撮像素子３０４の周縁部と回路基板３０１との間隙に紫外線・熱両用硬化型封止樹脂３１０を樹脂注入ノズル３１３により注入する。これにより、注入した紫外線・熱両用硬化型封止樹脂３１０が固体撮像素子３０４の撮像面３０５側に流動しようとする少なくともその先端部を、紫外線３０９により硬化させ、それ以上の流出を停止するようにしている。   FIG. 8 is a flowchart showing the manufacturing method. First, as shown in FIG. 8A, the solid-state imaging device 304 is mounted on the circuit board 301 via the connection conductor 303 and the protruding electrode 307. Next, as shown in FIG. 8B, the circuit board 301 is mounted. While irradiating the imaging surface 305 of the solid-state imaging device 304 from the side opposite to the mounting surface of the solid-state imaging device 304 through the opening 302 through the light shielding mask 312, the ultraviolet rays 309 generated by the ultraviolet generator 311 are irradiated. The ultraviolet / heat curable sealing resin 310 is injected into the gap between the peripheral edge of the solid-state imaging device 304 and the circuit board 301 by the resin injection nozzle 313. As a result, at least the tip of the injected ultraviolet / heat curable sealing resin 310 that is about to flow toward the imaging surface 305 side of the solid-state imaging device 304 is cured by the ultraviolet rays 309, and further outflow is stopped. I have to.

さらに、所定の量の紫外線・熱両用硬化型封止樹脂３１０を注入した後、図８（ｃ）に示すように、例えば電気炉等の加熱手段３１４で加熱することにより、紫外線・熱両用硬化型封止樹脂３１０の全体を本硬化する。また、不要光が紫外線・熱両用硬化型封止樹脂３１０を通して固体撮像素子３０４の撮像面３０５に入る恐れのある回路基板構成の場合は、図８（ｄ）に示すように、紫外線・熱両用硬化型封止樹脂３１０の上から、あるいは、紫外線・熱両用硬化型封止樹脂３１０と固体撮像素子３０４の裏面全体を遮光性樹脂３１５で覆うようにする。   Further, after injecting a predetermined amount of ultraviolet / heat curable sealing resin 310, as shown in FIG. 8 (c), for example, by heating with a heating means 314 such as an electric furnace, the ultraviolet / heat curable resin is cured. The entire mold sealing resin 310 is fully cured. In the case of a circuit board configuration in which unnecessary light may enter the imaging surface 305 of the solid-state imaging device 304 through the ultraviolet / heat curable sealing resin 310, as shown in FIG. The light-blocking resin 315 covers the entire back surface of the curable sealing resin 310 or the ultraviolet and heat-curable curable sealing resin 310 and the solid-state imaging element 304.

また、回路基板の開口部周囲に、固体撮像素子の撮像面を囲むように枠状構造体を設けて封止樹脂の流れを止めるようにした固体撮像装置（例えば、特許文献２を参照）も提案されている。   In addition, a solid-state imaging device (see, for example, Patent Document 2) in which a frame-like structure is provided around the opening of the circuit board so as to surround the imaging surface of the solid-state imaging device to stop the flow of the sealing resin. Proposed.

図９はそのような固体撮像装置４００を示した図である。接続導体４０３を設けた回路基板４０１に、固体撮像素子４０４が突起電極４０７を介してフェイスダウンに接続されており、更に、枠状構造体４０６が撮像面４０５を囲むように、固体撮像素子４０４表面と回路基板４０１表面との双方もしくは片方に固着されている。そして、その外側に封止樹脂４０８が充填されたものである。   FIG. 9 is a diagram showing such a solid-state imaging device 400. The solid-state image sensor 404 is connected face-down to the circuit board 401 provided with the connection conductor 403 via the protruding electrodes 407, and the frame-like structure 406 surrounds the imaging surface 405. It is fixed to both or one of the surface and the circuit board 401 surface. The outer side is filled with a sealing resin 408.

このような固体撮像装置４００は、封止樹脂４０８が比較的低い粘度であっても、枠状構造体４０６が封止樹脂４０８の流れを止めるので、撮像面４０５へ浸入することはないとされている。
特開平１１−２２０１１５号公報（第１図） 特開２００１−２５０８８９号公報（第１図） In such a solid-state imaging device 400, even if the sealing resin 408 has a relatively low viscosity, the frame-like structure 406 stops the flow of the sealing resin 408, so that it does not enter the imaging surface 405. ing.
Japanese Patent Laid-Open No. 11-220115 (FIG. 1) JP 2001-250889 A (FIG. 1)

しかしながら上記のような従来の固体撮像装置では、それぞれ以下のような問題点がある。
図７の固体撮像装置２００は、量産化に際して封止樹脂の塗布量の厳密な管理に困難がある。 However, the conventional solid-state imaging device as described above has the following problems.
The solid-state imaging device 200 of FIG. 7 has difficulty in strictly managing the coating amount of the sealing resin in mass production.

また、図８に示した紫外線・熱両用硬化型封止樹脂３１０を紫外線３０９によって硬化し、紫外線・熱両用硬化型封止樹脂３１０が固体撮像素子３０４の撮像面３０５に浸入することを防止する製造方法は、有効な方法であるが、固体撮像素子３０４の端面と撮像面３０５の端面との距離が近接した固体撮像素子３０４の場合、樹脂注入ノズル３１３によって注入された紫外線・熱両用硬化型封止樹脂３１０の浸入速度が速くなり、紫外線・熱両用硬化型封止樹脂３１０が撮像面３０５に至る前に、その紫外線・熱両用硬化型封止樹脂３１０を紫外線３０９で硬化反応させて流動を止めることができない。   Further, the ultraviolet / heat curable sealing resin 310 shown in FIG. 8 is cured by the ultraviolet 309 to prevent the ultraviolet / heat curable sealing resin 310 from entering the imaging surface 305 of the solid-state imaging device 304. The manufacturing method is an effective method, but in the case of the solid-state imaging device 304 in which the distance between the end surface of the solid-state imaging device 304 and the end surface of the imaging surface 305 is close, the ultraviolet / heat curable type injected by the resin injection nozzle 313. The penetration speed of the sealing resin 310 is increased, and before the ultraviolet / heat curable sealing resin 310 reaches the imaging surface 305, the ultraviolet / heat curable sealing resin 310 is cured by the ultraviolet light 309 to flow. I can't stop.

また、図９に示した固体撮像素子４０４の撮像面４０５の周囲、もしくは回路基板４０１の開口部４０２周縁に枠状構造体４０６を設けた固体撮像装置４００は、封止樹脂４０８が撮像面４０５にまで浸入することを防ぐには有効な方法ではあるが、固体撮像素子４０４または回路基板４０１に対して高精度のフォトリソグラフィ技術によるメッキ膜またはフォトレジスト膜の形成を必要とする。   Further, in the solid-state imaging device 400 in which the frame-like structure 406 is provided around the imaging surface 405 of the solid-state imaging element 404 or the periphery of the opening 402 of the circuit board 401 illustrated in FIG. 9, the sealing resin 408 has the imaging surface 405. However, it is necessary to form a plating film or a photoresist film on the solid-state imaging device 404 or the circuit board 401 by a high-precision photolithography technique.

以上のため、固体撮像素子の撮像面が汚染され、撮像品質が低下してしまうとともに、製品の歩留りが悪化して生産性が低下するという問題点を有していた。
本発明は、上記従来の問題点を解決するもので、撮像面を汚染することがなく、良好な撮像品質を得ることができるとともに、製品の歩留りを向上して生産性を高めることができる固体撮像装置を提供する。 For the above reasons, the imaging surface of the solid-state imaging device is contaminated, and the imaging quality is deteriorated. Further, the yield of the product is deteriorated and the productivity is lowered.
The present invention solves the above-mentioned conventional problems, and does not contaminate the imaging surface, can obtain good imaging quality, and can improve the yield of products and increase productivity. An imaging device is provided.

上記の課題を解決するために、本発明の請求項１に記載の固体撮像装置は、撮像面を有する固体撮像素子と、開口部および接続導体を有する絶縁基体とを、前記撮像面が前記絶縁基体に対してフェイスダウンするように接続した固体撮像装置において、前記絶縁基体は、前記開口部の周縁に前記撮像面より広い面積の窪みを有する構成としたことを特徴とする。   In order to solve the above-described problem, a solid-state imaging device according to claim 1 of the present invention includes: a solid-state imaging device having an imaging surface; and an insulating base having an opening and a connection conductor; In the solid-state imaging device connected so as to face down with respect to the base, the insulating base is configured to have a depression having a larger area than the imaging surface at the periphery of the opening.

また、本発明の請求項２に記載の固体撮像装置は、請求項１記載の固体撮像装置であって、前記絶縁基体が、配線基板からなることを特徴とする。
また、本発明の請求項３に記載の固体撮像装置は、請求項１記載の固体撮像装置であって、前記絶縁基体が、樹脂成形パッケージからなることを特徴とする。 A solid-state imaging device according to claim 2 of the present invention is the solid-state imaging device according to claim 1, wherein the insulating base is formed of a wiring board.
A solid-state imaging device according to claim 3 of the present invention is the solid-state imaging device according to claim 1, wherein the insulating base is formed of a resin molded package.

以上により、固体撮像素子の表面と窪みの底面との間隙が大きくなり、絶縁基体と固体撮像素子との間隙を低粘度の封止樹脂で封止する際に、塗布される封止樹脂が毛細管現象によって内部へ浸入しても、絶縁基体に形成された窪みによって毛細管現象が断ち切られて、封止樹脂の撮像面への浸入を停止することができる。   As described above, the gap between the surface of the solid-state imaging device and the bottom surface of the recess is increased, and the sealing resin to be applied is sealed when the gap between the insulating substrate and the solid-state imaging device is sealed with a low-viscosity sealing resin. Even if it penetrates into the inside due to the phenomenon, the capillary phenomenon is cut off by the depression formed in the insulating substrate, and the penetration of the sealing resin into the imaging surface can be stopped.

以上のように本発明によれば、固体撮像素子の表面と窪みの底面との間隙が大きくなり、絶縁基体と固体撮像素子との間隙を低粘度の封止樹脂で封止する際に、塗布される封止樹脂が毛細管現象によって内部へ浸入しても、絶縁基体に形成された窪みによって毛細管現象が断ち切られて、封止樹脂の撮像面への浸入を停止することができる。   As described above, according to the present invention, the gap between the surface of the solid-state imaging device and the bottom surface of the recess is increased, and the gap between the insulating substrate and the solid-state imaging device is applied when sealing with the low-viscosity sealing resin. Even if the sealing resin to be infiltrated into the inside due to the capillary phenomenon, the capillary phenomenon is cut off by the depression formed in the insulating substrate, and the infiltration of the sealing resin into the imaging surface can be stopped.

そのため、撮像面を汚染することがなく、良好な撮像品質を得ることができるとともに、製品の歩留りを向上して生産性を高めることができる。   Therefore, the imaging surface is not contaminated and good imaging quality can be obtained, and the yield of products can be improved to increase productivity.

以下、本発明の実施の形態を示す固体撮像装置について、図面を参照しながら具体的に説明する。
（実施の形態１）
本発明の実施の形態１の固体撮像装置を説明する。 Hereinafter, a solid-state imaging device according to an embodiment of the present invention will be specifically described with reference to the drawings.
(Embodiment 1)
A solid-state imaging device according to Embodiment 1 of the present invention will be described.

図１は本実施の形態１の固体撮像装置の構成を示す縦断面図である。また、図２は図１に示す固体撮像装置の縦断面図において○印で示した部分の拡大断面図である。
固体撮像装置１は、固体撮像素子１１が開口部２０を有する回路基板１４に対して撮像面１２をフェイスダウンにして接続されたものである。すなわち、固体撮像素子１１に形成された例えば金による突起電極１３と回路基板１４に形成されている接続電極１５とを位置合わせし、フェイスダウン方式で装着されたものである。この装着は、突起電極１３を回路基板１４の接続電極１５に接合して行い、その接合方法としては、超音波接合、導電接着剤による接着、はんだ接合、あるいは、Ａｕバンプとはんだ接合の併用などが適用される。 FIG. 1 is a longitudinal sectional view showing the configuration of the solid-state imaging device according to the first embodiment. 2 is an enlarged cross-sectional view of a portion indicated by a circle in the vertical cross-sectional view of the solid-state imaging device shown in FIG.
In the solid-state imaging device 1, the solid-state imaging device 11 is connected to a circuit board 14 having an opening 20 with the imaging surface 12 facing down. That is, the protruding electrode 13 made of, for example, gold formed on the solid-state imaging device 11 and the connection electrode 15 formed on the circuit board 14 are aligned and mounted in a face-down manner. This mounting is performed by bonding the protruding electrode 13 to the connection electrode 15 of the circuit board 14, and the bonding method includes ultrasonic bonding, bonding with a conductive adhesive, solder bonding, or a combination of Au bump and solder bonding. Applies.

そして、固体撮像素子１１の撮像面１２に対向する回路基板１４の面には撮像面１２よりも面積が広く、かつ開口部２０よりも広い面積で窪み１６が形成されている。窪み１６の上側の空間１７は突起電極１３と接続電極１５とによって定まる固体撮像素子１１と回路基板１４との間の本来的な空間である。   A recess 16 is formed on the surface of the circuit board 14 facing the imaging surface 12 of the solid-state imaging device 11 so as to have a larger area than the imaging surface 12 and a larger area than the opening 20. A space 17 above the depression 16 is an original space between the solid-state imaging device 11 and the circuit board 14, which is defined by the protruding electrode 13 and the connection electrode 15.

上記の固体撮像素子１１と回路基板１４とが接続電極１５を介して接続された状態において、その周縁部に硬化前の紫外線・熱両用硬化型の封止樹脂１９がディスペンサによって塗布される。塗布後に封止樹脂１９は紫外線もしくは熱により硬化される。   In a state where the solid-state imaging device 11 and the circuit board 14 are connected via the connection electrode 15, an ultraviolet / heat curable sealing resin 19 before curing is applied to the peripheral portion by a dispenser. After application, the sealing resin 19 is cured by ultraviolet rays or heat.

その過程において、未硬化の低粘度の封止樹脂１９は、固体撮像素子１１と回路基板１４との狭い空間１７、ないしは固体撮像素子１１と接続電極１５との間の空間を毛細管現象によって浸入し内部へ入り込むが、図２に示すように、回路基板１４に設けられている窪み１６と本来の空間１７とによって、固体撮像素子１１の表面と窪み１６の底面との間には矢印ｈ１で示す大きさの間隙が形成されているので上記の毛細管現象が断ち切られ、封止樹脂１９は窪み１６へ僅か入った箇所で垂直方向へ垂れて浸入を停止される。そして、硬化が進行することにより、封止樹脂１９は図２に示した状態で完全に硬化される。   In the process, the uncured low-viscosity sealing resin 19 infiltrates the narrow space 17 between the solid-state imaging device 11 and the circuit board 14 or the space between the solid-state imaging device 11 and the connection electrode 15 by capillary action. Although entering the inside, as shown in FIG. 2, an arrow h <b> 1 indicates between the surface of the solid-state imaging device 11 and the bottom surface of the recess 16 due to the recess 16 provided in the circuit board 14 and the original space 17. Since the gap of the size is formed, the above-mentioned capillary phenomenon is cut off, and the sealing resin 19 hangs down in the vertical direction at a position slightly entering the recess 16 and stops entering. Then, as the curing proceeds, the sealing resin 19 is completely cured in the state shown in FIG.

また、特許文献１の製造方法と併用した場合、図３に示すように、紫外線照射装置２２から照射される紫外線２１の照射角度αが、窪み１６がない場合の照射角度βに比較して小さくすることができ、これにより、封止樹脂１９を撮像面１２から離れた浸入位置で硬化することができ、固体撮像素子１１の端面と撮像面１２の端面との距離が近接した構成においても、さらに優れた撮像品質が得られる。   Further, when used in combination with the manufacturing method of Patent Document 1, as shown in FIG. 3, the irradiation angle α of the ultraviolet rays 21 irradiated from the ultraviolet irradiation device 22 is smaller than the irradiation angle β when there is no depression 16. Thus, the sealing resin 19 can be cured at an intrusion position away from the imaging surface 12, and even in a configuration in which the distance between the end surface of the solid-state imaging device 11 and the end surface of the imaging surface 12 is close, Further excellent imaging quality can be obtained.

このようにして、浸入した封止樹脂１９が固体撮像素子１１の撮像面１２を汚染することを完全に防止することができ、優れた撮像品質が得られる。また、封止樹脂１９が撮像面１２を汚染した不良品の発生が防止されるので、製品の歩留りが向上し、製造ラインの生産性を高めることができる。
（実施の形態２）
本発明の実施の形態２の固体撮像装置を説明する。 In this way, it is possible to completely prevent the infiltrated sealing resin 19 from contaminating the imaging surface 12 of the solid-state imaging device 11, and an excellent imaging quality can be obtained. Moreover, since the generation of defective products in which the sealing resin 19 contaminates the imaging surface 12 is prevented, the yield of products can be improved and the productivity of the production line can be increased.
(Embodiment 2)
A solid-state imaging device according to Embodiment 2 of the present invention will be described.

図４は本実施の形態２の固体撮像装置の構成を示す縦断面図である。また、図５は図４に示す固体撮像装置の縦断面図において○印で示した部分の拡大断面図である。なお、図４および図５において、図１および図２と同じ構成要素については同じ符号を用い、ここでの説明は省略する。   FIG. 4 is a longitudinal sectional view showing the configuration of the solid-state imaging device according to the second embodiment. FIG. 5 is an enlarged cross-sectional view of a portion indicated by a circle in the vertical cross-sectional view of the solid-state imaging device shown in FIG. 4 and 5, the same reference numerals are used for the same components as those in FIGS. 1 and 2, and descriptions thereof are omitted here.

実施の形態１の固体撮像装置においては、絶縁基体を接続電極を有する回路基板で構成したが、本実施の形態２の固体撮像装置では、絶縁基体として樹脂成形パッケージ２３を使用した点が異なる。従ってここでは、固体撮像装置２４は、固体撮像素子１１が開口部２０を有する樹脂成形パッケージ２３に対して撮像面１２をフェイスダウンにして接続されたものとなっている。   In the solid-state imaging device of the first embodiment, the insulating base is configured by a circuit board having connection electrodes, but the solid-state imaging device of the second embodiment is different in that a resin molded package 23 is used as the insulating base. Therefore, here, the solid-state imaging device 24 is connected to the resin molding package 23 in which the solid-state imaging device 11 has the opening 20 with the imaging surface 12 facing down.

すなわち、固体撮像素子１１に形成された例えば金による突起電極１３と樹脂成形パッケージ２３に形成されている接続電極１５とを位置合わせし、フェイスダウン方式で装着されたものである。この装着は、突起電極１３を樹脂成形パッケージ２３の接続電極１５に接合して行い、その接合方法としては、超音波接合、導電接着剤による接着、はんだ接合、あるいは、Ａｕバンプとはんだ接合の併用などが適用される。   That is, the protruding electrode 13 made of, for example, gold formed on the solid-state image pickup device 11 and the connection electrode 15 formed on the resin molded package 23 are aligned and mounted in a face-down manner. This mounting is performed by bonding the protruding electrode 13 to the connection electrode 15 of the resin molding package 23. As a bonding method, ultrasonic bonding, bonding with a conductive adhesive, solder bonding, or a combination of Au bump and solder bonding is used. Etc. apply.

そして、固体撮像素子１１の撮像面１２に対向する樹脂成形パッケージ２３の面には撮像面１２よりも面積が広く、かつ開口部２０よりも広い面積で窪み１６が形成されている。窪み１６の上側の空間１７は、突起電極１３と接続電極１５とによって定まる固体撮像素子１１と樹脂成形パッケージ２３との間の本来的な空間である。   A recess 16 is formed on the surface of the resin molded package 23 facing the imaging surface 12 of the solid-state imaging device 11 so as to have a larger area than the imaging surface 12 and a larger area than the opening 20. A space 17 above the recess 16 is an original space between the solid-state imaging device 11 and the resin molded package 23, which is defined by the protruding electrode 13 and the connection electrode 15.

上記の固体撮像素子１１と樹脂成形パッケージ２３とが接続電極１５を介して接続された状態において、その周縁部に硬化前の紫外線・熱両用硬化型の封止樹脂１９がディスペンサによって塗布される。塗布後に封止樹脂１９は紫外線もしくは熱により硬化される。   In a state where the solid-state imaging device 11 and the resin molded package 23 are connected via the connection electrode 15, an ultraviolet / heat curable sealing resin 19 before curing is applied to the peripheral portion by a dispenser. After application, the sealing resin 19 is cured by ultraviolet rays or heat.

その過程において、未硬化の低粘度の封止樹脂１９は、固体撮像素子１１と樹脂成形パッケージ２３との狭い空間１７、ないしは固体撮像素子１１と接続電極１５との間の空間を毛細管現象によって浸入し内部へ入り込むが、図５に示すように、樹脂成形パッケージ２３に設けられている窪み１６と本来の空間１７とによって、固体撮像素子１１の表面と窪み１６の底面との間には矢印ｈ２で示す大きさの間隙が形成されているので上記の毛細管現象が断ち切られ、封止樹脂１９は窪み１６へ僅か入った箇所で垂直方向へ垂れて浸入を停止される。そして、硬化が進行することにより、封止樹脂１９は図５に示した状態で完全に硬化される。   In the process, the uncured low-viscosity sealing resin 19 penetrates the narrow space 17 between the solid-state image sensor 11 and the resin molded package 23 or the space between the solid-state image sensor 11 and the connection electrode 15 by capillary action. However, as shown in FIG. 5, an arrow h <b> 2 is formed between the surface of the solid-state imaging device 11 and the bottom surface of the recess 16 by the recess 16 provided in the resin molding package 23 and the original space 17. Since the gap of the size shown in FIG. 6 is formed, the capillary phenomenon is cut off, and the sealing resin 19 hangs down in the vertical direction at a position where it slightly enters the recess 16 and stops entering. As the curing proceeds, the sealing resin 19 is completely cured in the state shown in FIG.

また、特許文献１の製造方法と併用した場合には、前述の実施の形態１の固体撮像装置の場合と同様に、固体撮像素子１１の端面と撮像面１２の端面との距離が近接した構成においても、さらに優れた撮像品質が得られる。   Further, when used in combination with the manufacturing method of Patent Document 1, the distance between the end surface of the solid-state imaging element 11 and the end surface of the imaging surface 12 is close, as in the case of the solid-state imaging device of the first embodiment described above. In this case, even better imaging quality can be obtained.

このようにして、浸入した封止樹脂１９が固体撮像素子１１の撮像面１２を汚染することを完全に防止することができ、優れた撮像品質が得られる。また、封止樹脂１９が撮像面１２を汚染した不良品の発生が防止されるので、製品の歩留りが向上し、製造ラインの生産性を高めることができる。   In this way, it is possible to completely prevent the infiltrated sealing resin 19 from contaminating the imaging surface 12 of the solid-state imaging device 11, and an excellent imaging quality can be obtained. Moreover, since the generation of defective products in which the sealing resin 19 contaminates the imaging surface 12 is prevented, the yield of products can be improved and the productivity of the production line can be increased.

以上、本発明の固体撮像装置を実施の形態によって具体的に説明したが、勿論、本発明はこれに限られることなく、本発明の技術的思想に基づいて、種々の変形が可能である。
例えば、実施の形態１の固体撮像装置１においては、固体撮像素子１１をフェイスダウン方式で装着した後に、封止樹脂１９を注入したが、例えば、回路基板１４に封止樹脂１９を塗布した後に、固体撮像素子１１を加熱・加圧による圧着接合で接合させる場合においても、封止樹脂１９は窪みにより流速が低下しつつ硬化反応が進行するために、撮像面を汚染せず、同様の効果が得られる。 The solid-state imaging device of the present invention has been specifically described above by way of the embodiments. However, of course, the present invention is not limited to this, and various modifications can be made based on the technical idea of the present invention.
For example, in the solid-state imaging device 1 according to the first embodiment, the sealing resin 19 is injected after the solid-state imaging element 11 is mounted by the face-down method. For example, after the sealing resin 19 is applied to the circuit board 14. Even when the solid-state imaging element 11 is joined by pressure-bonding by heating and pressurization, the sealing resin 19 proceeds with a curing reaction while the flow velocity is lowered due to the depression, so that the imaging surface is not contaminated and the same effect is obtained. Is obtained.

また、各実施の形態においては、固体撮像装置や、その構成要素である固体撮像素子が方形である場合を説明したが、それ以外の多角形や円形または楕円形であってもよく、固体撮像装置や固体撮像素子の形状は限定されない。   In each embodiment, the case where the solid-state imaging device or the solid-state imaging element that is a component thereof is a square has been described. However, other polygons, circles, or ellipses may be used. The shape of the device or the solid-state image sensor is not limited.

また、各実施の形態においては、封止樹脂として紫外線・熱両用硬化型を使用したが、紫外線硬化型樹脂や熱硬化性樹脂を使用してもよいことは言うまでもない。
また、各実施の形態の絶縁基体として、ガラスエポキシ基板やセラミック基板からなる配線基板、あるいは樹脂成形パッケージを使用することができる。 In each embodiment, the ultraviolet / heat curable type is used as the sealing resin, but it goes without saying that an ultraviolet curable resin or a thermosetting resin may be used.
In addition, as the insulating base of each embodiment, a wiring substrate made of a glass epoxy substrate or a ceramic substrate, or a resin molded package can be used.

本発明の固体撮像装置は、撮像面を汚染することがなく、良好な撮像品質を得ることができるとともに、製品の歩留りを向上して生産性を高めることができるものであり、カメラ付き携帯電話などの携帯端末等に内蔵される固体撮像装置に適用することができる。   The solid-state imaging device of the present invention can obtain good imaging quality without contaminating the imaging surface, and can improve the yield of the product and increase the productivity. The present invention can be applied to a solid-state imaging device built in a portable terminal or the like.

本発明の実施の形態１の固体撮像装置の構成を示す縦断面図1 is a longitudinal sectional view showing a configuration of a solid-state imaging device according to Embodiment 1 of the present invention. 同実施の形態１の固体撮像装置における部分拡大断面図Partial expanded sectional view in the solid-state imaging device of Embodiment 1 同実施の形態１の固体撮像装置に特許文献１の製造方法を併用した場合の固体撮像装置の縦断面図Vertical sectional view of the solid-state imaging device when the manufacturing method of Patent Document 1 is used in combination with the solid-state imaging device of the first embodiment 本発明の実施の形態２の固体撮像装置の構成を示す縦断面図FIG. 3 is a longitudinal sectional view showing the configuration of a solid-state imaging device according to Embodiment 2 of the present invention. 同実施の形態２の固体撮像装置における部分拡大断面図Partial expanded sectional view in the solid-state imaging device of Embodiment 2 従来の固体撮像装置の固体撮像素子がパッケージに収容されたワイヤボンディング方式による構成を示す縦断面図Longitudinal sectional view showing a configuration by a wire bonding method in which a solid-state imaging device of a conventional solid-state imaging device is accommodated in a package 従来の固体撮像装置のフリップチップ方式による構成を示す縦断面図Longitudinal sectional view showing a configuration of a conventional solid-state imaging device by a flip chip method 同従来例の固体撮像装置の製造方法を示す縦断面図A longitudinal sectional view showing a method for manufacturing the conventional solid-state imaging device 従来の固体撮像装置のフリップチップ方式による他の構成を示す縦断面図Longitudinal sectional view showing another configuration of a conventional solid-state imaging device by a flip chip method

符号の説明Explanation of symbols

１ 固体撮像装置
１１ 固体撮像素子
１２ 撮像面
１３ 突起電極
１４ 回路基板
１５ 接続電極
１６ 窪み
１７ 空間
１９ 封止樹脂
２０ 開口部
２１ 紫外線
２２ 紫外線照射装置
２３ 樹脂成形パッケージ
２４ 固体撮像装置 DESCRIPTION OF SYMBOLS 1 Solid-state imaging device 11 Solid-state imaging device 12 Imaging surface 13 Projection electrode 14 Circuit board 15 Connection electrode 16 Depression 17 Space 19 Sealing resin 20 Opening part 21 Ultraviolet 22 Ultraviolet irradiation device 23 Resin molding package 24 Solid-state imaging device

Claims (3)

撮像面を有する固体撮像素子と、開口部および接続導体を有する絶縁基体とを、前記撮像面が前記絶縁基体に対してフェイスダウンするように接続した固体撮像装置において、前記絶縁基体は、前記開口部の周縁に前記撮像面より広い面積の窪みを有することを特徴とする固体撮像装置。   In the solid-state imaging device in which a solid-state imaging device having an imaging surface and an insulating base having an opening and a connection conductor are connected so that the imaging surface faces down with respect to the insulating base, the insulating base has the opening A solid-state image pickup device having a depression having an area larger than that of the image pickup surface at the periphery of the portion. 前記絶縁基体が、配線基板からなることを特徴とする請求項１記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the insulating base is made of a wiring board. 前記絶縁基体が、樹脂成形パッケージからなることを特徴とする請求項１記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein the insulating base is made of a resin molded package.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Publication number Priority date Publication date Assignee Title
WO2007099677A1 (en) * 2006-03-03 2007-09-07 Sony Chemical & Information Device Corporation Functional-element-mounted module, process for producing the same, resin sealing plate for use therein, and substrate structure for resin sealing
JP2008226895A (en) * 2007-03-08 2008-09-25 New Japan Radio Co Ltd Optical semiconductor device and its manufacturing method
JP2011086789A (en) * 2009-10-16 2011-04-28 Japan Radio Co Ltd Mounting structure and mounting method for electronic component
WO2015060345A1 (en) * 2013-10-23 2015-04-30 京セラ株式会社 Imaging element mounted substrate and imaging device
JP5988412B2 (en) * 2013-10-23 2016-09-07 京セラ株式会社 Imaging device mounting substrate and imaging apparatus
JP2017092320A (en) * 2015-11-12 2017-05-25 旭化成エレクトロニクス株式会社 Optical sensor device

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