JP2005099410A - フレキシブルマトリクス基板およびフレキシブル表示装置 - Google Patents
フレキシブルマトリクス基板およびフレキシブル表示装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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Abstract
フレキシブルなマトリックス基板や表示装置の曲げに対する耐性を向上させる。
【解決手段】
基板101と、基板101上にマトリクス状に形成された信号線104及び走査線105と、信号線104及び走査線105に囲まれる画素電極と、信号線104及び走査線105に囲まれる接着層201と、接着層201上に固着され、信号線104及び走査線105及び画素電極103と引き出し配線1021、1022、1023を介して接続されるTFT102とを備え、接着層201端部において、引き出し配線1021、1022、1023は互いに平行であることを特徴とするフレキシブルマトリクス基板。
【選択図】 図1
Description
選択的に転写を行うためには転写先基板に接着層と呼ばれる層を形成する方法が有力である。これは、島状に形成した接着層上にのみTFTを転写する方法である。
層が存在せず比較的曲がりやすい部分がある。接着層端部は、これらの曲がりにくい部分と曲がりやすい部分との境界となる。また、接着層は比較的厚く、接着層端部では段差が生じるところでもある。
フタレート(PET)、ポリカーボネート(PC)、ポリエーテルスルホン(PES)、ポリエーテルケトン(PEEK)、ポリエチレンナフタレート(PEN)、ポリイミド(PI)等が使用できる。
る日東電工株式会社製のリバアルファ(登録商標)、温度で接着強度が大きく変化するタイプのニッタ株式会社のインテリマー(登録商標)などを用いることが可能である。
一方、基板101上に信号線及び走査線を形成する。信号線104や走査線105は、Al、Mo、MoW、MoTa等の金属膜をスパッタリング法などにより300nm程度形成後、パターニングを行い形成する。これらの配線には、単層の金属膜を用いることもできるし、積層膜を用いることもできる。また、これらの配線の間及び配線上には、SiNx、SiOx、SiOxNyなどの絶縁膜が形成されている。そして、フォトリソグラフィや印刷等によって、接着層201を形成する。ここで、接着層201は、TFT102を設けたい位置に形成し、TFT102を接着するのに十分な大きさの島形状をしており、30〜100μm程度である。典型的には、矩形であるが、画素電極等との形状と合わせ、その他の多角形でもよい。また、接着層201の大きさは、TFT102の転写精度等による誤差を見込み、転写精度を考えた十分なマージンを取ることが必要である。この他、配線をつなぐため、接着層201端部はある程度のテーパがついているほうが望ましい。テーパ角は、例えば60度程度にすれば段切れも押さえられ、またテーパ部の面積が大きくなり過ぎなくてすむ。
このようにして、素子形成基板401上のTFT102を基板101上に選択的に転写することができる。
わむ方向に曲げられたとき(図1でいえば、上下方向に曲げられたとき)には、歪が集中しやすい接着層201端部において、引き出し配線は直線的なままであり、引き出し配線の断線などが起こらない。即ち、図1のような配線を行った場合、信号線104方向の曲がりに対して耐性が向上する。
の幅を変えることも可能である。
プレイを構成することができる。
102 TFT
103 画素電極
104 信号線
105 走査線
106 電源線
201 接着層
301 画素駆動回路
302 発光層
1021 ソース引き出し配線
1022 ドレイン引き出し配線
1023 ゲート引き出し配線
1024 電源引き出し配線
Claims (7)
- 基板と、
前記基板上にマトリクス状に形成された信号線及び走査線と、
前記信号線及び前記走査線に囲まれる画素電極と、
前記信号線及び前記走査線に囲まれる接着層と、
前記接着層上に固着され、前記信号線及び前記走査線及び前記画素電極と引き出し配線を介して接続されるTFTとを備え、
前記接着層端部において、前記引き出し配線は互いに平行であることを特徴とするフレキシブルマトリクス基板。 - 前記接着層端部のうち、前記引き出し配線下の辺のみテーパ状であることを特徴とする請求項1記載のフレキシブルマトリクス基板。
- さらに、前記基板上に設けられた周辺回路接着層と、
前記周辺回路接着層上に設けられ、前記信号線及び前記走査線と周辺回路接続配線を介して接続された周辺回路を備え、
前記周辺回路接続配線は、前記周辺回路接着層端部において、前記引き出し配線と平行であることを特徴とする請求項1記載のフレキシブルマトリクス基板。 - 請求項1記載のフレキシブルマトリクス基板を備えることを特徴とするフレキシブル表示装置。
- さらに、対向電極を有する対向基板と、
前記フレキシブルマトリクス基板と前記対向基板とに挟持される液晶と
を備えることを特徴とする請求項4記載のフレキシブル表示装置。 - さらに、前記基板上に制限部材を備えることを特徴とする請求項1記載のフレキシブルマトリクス基板。
- 前記接着層は、樹脂からなることを特徴とする請求項1記載のフレキシブルマトリクス基板。
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Cited By (14)
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US8203261B2 (en) | 2007-08-21 | 2012-06-19 | Hitachi Displays, Ltd. | Display device |
US8258695B2 (en) | 2006-06-19 | 2012-09-04 | Sumitomo Chemical Company, Limited | Capsular micro light-emitting device and method for manufacturing the same |
US8409451B2 (en) | 2006-07-04 | 2013-04-02 | Nec Corporation | Apparatus for etching substrate and method of fabricating thin-glass substrate |
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US10355249B2 (en) | 2017-04-11 | 2019-07-16 | Japan Display Inc. | Organic electro-luminescence display device and manufacturing method of an organic electro-luminescence display device |
US10468363B2 (en) | 2015-08-10 | 2019-11-05 | X-Celeprint Limited | Chiplets with connection posts |
US10748793B1 (en) | 2019-02-13 | 2020-08-18 | X Display Company Technology Limited | Printing component arrays with different orientations |
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US8258695B2 (en) | 2006-06-19 | 2012-09-04 | Sumitomo Chemical Company, Limited | Capsular micro light-emitting device and method for manufacturing the same |
US8409451B2 (en) | 2006-07-04 | 2013-04-02 | Nec Corporation | Apparatus for etching substrate and method of fabricating thin-glass substrate |
US8203261B2 (en) | 2007-08-21 | 2012-06-19 | Hitachi Displays, Ltd. | Display device |
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US10189243B2 (en) | 2011-09-20 | 2019-01-29 | X-Celeprint Limited | Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion |
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US10103069B2 (en) | 2016-04-01 | 2018-10-16 | X-Celeprint Limited | Pressure-activated electrical interconnection by micro-transfer printing |
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US10222698B2 (en) | 2016-07-28 | 2019-03-05 | X-Celeprint Limited | Chiplets with wicking posts |
US11064609B2 (en) | 2016-08-04 | 2021-07-13 | X Display Company Technology Limited | Printable 3D electronic structure |
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US10748793B1 (en) | 2019-02-13 | 2020-08-18 | X Display Company Technology Limited | Printing component arrays with different orientations |
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