JP2005079302A - Thin film forming device, thin film forming method and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of effecting dummy dispense with a simple configuration while suppressing the degradation of throughput. <P>SOLUTION: Resists 5a-5n or rinse solutions Rp, Rq are discharged, respectively, out of other resist nozzles 5a-5n or rinse nozzles 5p, 5q, in stand-by on a block 8 for nozzle during one piece among the resist nozzles 5a-5n or the rinse nozzles 5p, 5q is employed for resist film treatment or rinse treatment. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a thin film forming apparatus, a thin film forming method, and a semiconductor device manufacturing method, and is particularly suitable when applied to a dummy dispensing method such as a resist.

Some conventional resist coating apparatuses include a plurality of nozzles for discharging a resist in order to properly use the resist depending on products or processes. In order to prevent the resist remaining in the other nozzles from being cured during use of one nozzle, dummy dispensing is performed for each nozzle at regular intervals.
Patent Document 1 also provides a resist corresponding to a resist supply system in which a plurality of cleaning mechanisms for individually cleaning a plurality of resist discharge nozzles are provided, and the resist type is changed without interrupting other resist coating processes. A method for cleaning the discharge nozzle is disclosed.
JP 2000-195774 A

However, in the method in which dummy dispensing is performed for each nozzle at regular intervals, it is necessary to stop the work process while the dummy dispensing is being performed. Therefore, if the number of nozzles increases, it causes a decrease in throughput. was there.
Further, in the method disclosed in Patent Document 1, in order to perform the cleaning process of the resist discharge nozzles without interrupting other resist coating processes, it is necessary to provide a cleaning mechanism for each nozzle, and the configuration of the apparatus is There was a problem of increasing complexity.

  Accordingly, an object of the present invention is to provide a thin film forming apparatus, a thin film forming method, and a semiconductor device manufacturing method capable of performing dummy dispensing with a simple configuration while suppressing a decrease in throughput.

  In order to solve the above-described problem, according to the thin film forming apparatus according to one aspect of the present invention, a plurality of nozzles that discharge droplets, a transport unit that transports the nozzles from a standby position onto a processing target, and a selection Discharge control means for discharging droplets from the nozzles onto the processing target, film forming processing means for performing film forming processing on the processing target by spreading the droplets on the processing target, and the processing target And a dummy dispense processing means for discharging droplets from the other nozzles on standby during the film forming process.

  This allows droplets to be ejected from nozzles that are not used for film formation while one of the nozzles is used for film formation, thereby changing the dummy dispensing sequence. This makes it possible to perform dummy dispensing during the film forming process. For this reason, it is possible to perform dummy dispensing without stopping the film forming process, it is possible to suppress a decrease in throughput, and it is not necessary to separately provide a cleaning mechanism for each nozzle. Can be prevented from becoming complicated.

  In addition, according to the thin film forming apparatus of one aspect of the present invention, the plurality of nozzles that discharge the resist, the transport unit that transports the nozzles from the standby position onto the wafer, and the resist from the selected nozzles onto the wafer. A discharge control means for discharging the resist, a film formation processing means for performing a resist film formation process on the wafer by rotating the wafer on which the resist is discharged, and a waiting state during the resist film formation process. And a dummy dispense processing means for discharging a resist from another nozzle.

  This makes it possible to discharge the resist from other waiting nozzles while one of the plurality of nozzles is used for the resist film formation process, and to change the dummy dispensing sequence. Thus, it becomes possible to perform dummy dispensing during the film forming process. For this reason, it becomes possible to prevent resist hardening in the nozzles in standby without stopping the film formation process, and even when a large number of nozzles are provided, the dummy dispensing process is performed within the tact of the film formation process. Can be completed. As a result, resist film formation can be performed while suppressing a decrease in throughput, and it is not necessary to provide a separate cleaning mechanism for each nozzle, thereby suppressing the complexity of the apparatus configuration. .

  In addition, according to the thin film forming apparatus of one embodiment of the present invention, the plurality of resist nozzles that discharge the resist, the rinse nozzle that discharges the rinsing liquid, and the resist nozzle and the rinse nozzle are transferred from the standby position onto the wafer. A transfer unit; a discharge control unit that discharges a resist onto the wafer from a selected resist nozzle; and a film formation unit that performs film formation processing of the resist by rotating the wafer on which the resist is discharged; Rinse treatment means for performing back rinse or edge rinse by discharging a rinse liquid from the rinse nozzle onto the wafer on which the resist is formed, and the standby during the resist film deposition process or the rinse process And a dummy dispense processing means for discharging resist or rinsing liquid from other nozzles. And butterflies.

  As a result, while one of the plurality of nozzles is used for the resist film forming process or the rinsing process, it becomes possible to discharge the resist or the rinsing liquid from the other nozzles in the standby state. By changing the sequence, dummy dispensing can be performed during the resist film forming process or the rinsing process. For this reason, it becomes possible to prevent clogging in the waiting nozzle without stopping the film forming process or the rinsing process, and even when a large number of nozzles are provided, the tact of the film forming process and the rinsing process is improved. The dummy dispensing process can be completed within. As a result, resist film formation processing and rinsing processing can be performed while suppressing a decrease in throughput, and it is not necessary to provide a separate cleaning mechanism for each nozzle, thereby suppressing the complexity of the apparatus configuration. Can do.

Further, according to the thin film forming method according to an aspect of the present invention, while performing dummy dispensing of some of the plurality of nozzles, the other nozzles are used to eject droplets onto the processing target, A film forming process to be processed is performed.
Thus, by changing the dummy dispensing sequence, it becomes possible to perform dummy dispensing during the film forming process, and it is possible to prevent nozzle clogging with a simple configuration while suppressing a decrease in throughput. .

In addition, according to the thin film forming method of one embodiment of the present invention, a resist is discharged onto the wafer from the selected nozzle, and the resist is discharged onto the wafer by rotating the wafer on which the resist has been discharged. The method includes a step of performing a film forming process and a step of discharging the resist from another nozzle that is on standby during the resist film forming process.
Thus, by changing the dummy dispensing sequence, it is possible to perform dummy dispensing of resist during the film forming process. For this reason, even when a large number of nozzles are provided, the dummy dispensing process can be completed within the tact of the film formation process, and resist hardening in the nozzles can be prevented with a simple configuration while suppressing a decrease in throughput. It becomes possible to do.

  In addition, according to the thin film forming method of one embodiment of the present invention, a resist is discharged onto the wafer from the selected nozzle, and the resist is discharged onto the wafer by rotating the wafer on which the resist has been discharged. A step of performing a film forming process, a step of performing a back rinse by discharging a rinsing liquid onto the back surface of the wafer on which the resist is formed, and a rinsing liquid being discharged on the edge of the wafer on which the resist is formed. And a step of performing edge rinse, and a step of discharging the resist or rinse liquid from another nozzle waiting during the back rinse or during the edge rinse during the resist film formation process. And

  Thus, by changing the dummy dispensing sequence, it becomes possible to perform dummy dispensing of resist or rinsing liquid during the film forming process. For this reason, even when a large number of nozzles are provided, the dummy dispensing process can be completed within the tact of the film forming process and the rinsing process, and the nozzle is clogged with a simple configuration while suppressing a decrease in throughput. Can be prevented.

  In addition, according to the method for manufacturing a semiconductor device of one embodiment of the present invention, a step of discharging a resist onto a semiconductor wafer from a selected nozzle and performing a resist film formation process on the semiconductor wafer; A step of discharging a resist from other nozzles waiting during the film formation process, and a step of forming a resist pattern on the semiconductor wafer by exposing and developing the resist formed on the semiconductor wafer; And a step of performing ion implantation or etching of the semiconductor wafer using the resist pattern as a mask.

As a result, it is possible to provide a large number of nozzles for discharging the resist while preventing the resist from being cured in the nozzle, and accurately perform the ion implantation process or the etching process while suppressing a decrease in throughput. It becomes possible.
According to the method for manufacturing a semiconductor device of one embodiment of the present invention, a step of discharging a resist onto a semiconductor wafer from a selected nozzle and performing a resist film formation process on the semiconductor wafer; A step of performing back rinsing by discharging a rinsing liquid onto the back surface of the deposited semiconductor wafer, and a step of performing edge rinsing by discharging a rinsing liquid onto the edge of the semiconductor wafer on which the resist has been formed. And a step of discharging a resist or a rinsing liquid from another nozzle waiting during the back rinsing or the edge rinsing during the resist film forming process, and exposure of the resist formed on the semiconductor wafer. Developing a resist pattern on the semiconductor wafer by developing, and using the resist pattern as a mask, the semiconductor Characterized in that it comprises a step of performing ion implantation process or etching process of the wafer.

  As a result, it is possible to provide a large number of nozzles that discharge resist or rinsing liquid while preventing nozzle clogging, and it is possible to perform ion implantation processing or etching processing accurately while suppressing a decrease in throughput. It becomes.

Hereinafter, a thin film forming apparatus and method according to an embodiment of the present invention will be described with reference to the drawings.
1A is a perspective view showing a schematic configuration of the thin film forming apparatus according to the first embodiment of the present invention, and FIG. 1B is a schematic configuration of a cup portion of the thin film forming apparatus of FIG. 2A is a perspective view showing the operation of the thin film forming apparatus of FIG. 1, and FIG. 2B is a cross sectional view showing a schematic configuration of a cup portion of the thin film forming apparatus of FIG. It is.

1 and 2, a motor 3 that rotates the wafer W is provided in the cup 1, and a suction pad 2 that sucks and holds the wafer W is connected to the motor 3.
The nozzle blocks 4a to 4n are provided with resist nozzles 5a to 5n for discharging the resists Ra to Rn, respectively. The nozzle blocks 4a to 4n are connected to resist lines 7a to 7n for supplying resists Ra to Rn to the resist nozzles 5a to 5n, respectively, and are connected to arms 6a to 6n for moving the nozzle blocks 4a to 4n. ing. Note that different types of resists Ra to Rn are prepared, and the resists Ra to Rn can be properly used depending on products or processes.

  The nozzle blocks 4p and 4q are provided with rinse nozzles 5p and 5q, respectively, for discharging rinse liquids Rp and Rq, respectively. The nozzle blocks 4p and 4q are connected to rinse lines 7p and 7q for supplying rinse liquids Rp and Rq to rinse nozzles 5p and 5q, respectively, and are connected to arms 6p and 6q for moving the nozzle blocks 4p and 4q. Has been.

  A nozzle standby block 8 is provided below the nozzle blocks 4a to 4n, 4p, and 4q. The nozzle standby block 8 is provided with resist receivers 9a to 9n for receiving the resists Ra to Rn discharged from the resist nozzles 5a to 5n, respectively, and discharged from the rinse nozzles 5p and 5q, respectively, during dummy dispensing. Rinse receptacles 9p and 9q for receiving the rinse liquids Rp and Rq, respectively, are arranged.

Here, when the resist nozzles 5a to 5n and the rinse nozzles 5p and 5q are in the standby state, the nozzle blocks 4a to 4n, 4p, and 4q are held on the nozzle standby block 8.
For example, when the resist Rb is formed on the wafer W, the wafer W is placed on the suction pad 2 and the wafer W is fixed on the suction pad 2. Then, as shown in FIG. 2, the nozzle block 4b is selected from the nozzle blocks 4a to 4n, and the nozzle block 4b is moved onto the wafer W via the arm 6b.

When the nozzle block 4b is moved onto the wafer W, the resist Rb is discharged onto the wafer W via the resist nozzle 5b. Then, the wafer W is rotated via the motor 3 to spread the resist Rb discharged onto the wafer W, thereby forming the resist Rb on the wafer W.
Here, when the resist Rb is formed on the wafer W, the resist Ra, Rn or the rinsing liquid Rp is transferred from the other resist nozzles 5a, 5n or the rinsing nozzles 5p, 5q on the nozzle standby block 8. , Rq can be discharged to perform dummy dispense processing.

FIG. 3 is a sequence diagram showing a dummy dispensing operation of the thin film forming apparatus of FIG.
In FIG. 3, other resist nozzles 5a to 5n waiting on the nozzle waiting block 8 during the film forming process of the resists Ra to Rn on the wafer W or the rinsing process using the rinsing liquids Rp and Rq. Alternatively, the resists Ra to Rn or the rinse liquids Rp and Rq are discharged from the rinse nozzles 5p and 5q, respectively.

Thereby, even when a large number of nozzles are provided, the dummy dispensing processes DP1 to DPm of the resist nozzles 5a to 5n or the rinse nozzles 5p and 5q can be performed within the WF tact, and the WF tact is prevented from being disturbed. , A decrease in throughput can be suppressed.
Here, when the dummy dispensing processes DP1 to DPm are performed in the WF tact, the dummy dispensing processes DP1 to DPm for a plurality of nozzles may be performed simultaneously, or the dummy dispensing processes DP1 for a plurality of nozzles are performed while being shifted in time. ˜DPm may be performed.

Further, for the resist nozzles 5a to 5n used at the head of the lot, a dummy dispensing process may be performed before the wafer W film forming process. However, even in this case, it is preferable to complete the dummy dispensing process within the WF tact.
FIG. 4 is a diagram showing processing performed in the WF tact of the thin film forming apparatus of FIG.
In FIG. 4A, for example, the nozzle block 4b is moved onto the wafer W, and the resist Rb is discharged onto the wafer W through the resist nozzle 5b. When the discharge of the resist Rb onto the wafer W is completed, the nozzle block 4b is returned to the nozzle standby block 8 via the arm 6b.

  Then, when the resist Rb is discharged onto the wafer W, as shown in FIG. 4B, the wafer W is rotated via the motor 3 to widen the resist Rb discharged onto the wafer W. A resist Rb is deposited on W. Here, when the resist Rb is formed on the wafer W, the resist Rb on the wafer W goes around the back surface of the wafer W, and the resist Rb adheres to the side surface of the wafer W.

  Next, as shown in FIG. 4C, the nozzle block 4p is moved onto the wafer W via the arm 6p. Then, the rinse liquid Rp is discharged onto the back surface of the wafer W through the rinse nozzle 5p, whereby the wafer W is back rinsed, and the resist Rb that has come around the back surface of the wafer W is removed. When the back rinse of the wafer W is completed, the nozzle block 4p is returned to the nozzle standby block 8 via the arm 6p.

  Next, as shown in FIG. 4D, the nozzle block 4q is moved onto the wafer W via the arm 6q. Then, the rinse liquid Rq is discharged to the end portion of the wafer W through the rinse nozzle 5q, thereby performing edge rinse of the wafer W and removing the resist Rb at the end portion of the wafer W. When the edge rinse of the wafer W is completed, the nozzle block 4q is returned to the nozzle standby block 8 via the arm 6q.

Here, while one of the resist nozzles 5a to 5n or the rinsing nozzles 5p and 5q is used for the resist film forming process or the rinsing process, another resist nozzle 5a waiting on the nozzle waiting block 8 is used. To 5n or rinse nozzles 5p and 5q can discharge resists 5a to 5n or rinse liquids Rp and Rq, respectively.
As a result, dummy dispensing can be performed during the resist film forming process or the rinsing process, and it is not necessary to stop the film forming process or the rinsing process in order to perform the dummy dispensing, thereby suppressing a decrease in throughput. It becomes possible.

In addition, by changing the dummy dispensing sequence, it becomes possible to perform dummy dispensing during the resist film forming process or the rinsing process, and it is not necessary to provide a separate cleaning mechanism for each nozzle, thereby complicating the apparatus configuration. Can be suppressed.
Further, after applying the resist Rb to the wafer W, the resist Rb adhering to the back surface and the end of the wafer W can be removed by performing the back rinse and the edge rinse of the wafer W. For this reason, it is possible to prevent the resist Rb from adhering to the transfer system of the wafer W, to prevent generation of particles, and to stably perform the film forming process of the wafer W.

  In the above-described embodiment, the method for manufacturing a semiconductor device has been described as an example. However, the present invention is not necessarily limited to the method for manufacturing a semiconductor device, and for example, a liquid crystal display device, a plasma display device, or an organic EL device. The present invention may be applied to a manufacturing method of a display device such as a ceramic element such as a surface acoustic wave (SAW) element, an optical element such as an optical modulator or an optical switch, or various sensors such as a magnetic sensor or a biosensor.

  In the above-described embodiment, the method of discharging the resists Ra to Rn and the rinsing liquids Rp and Rq onto the wafer W has been described. However, the resist Ra to the SOG (Spin On Glass) material, the polishing slurry, the resin, and the like. You may apply to the method of discharging droplets other than Rn and rinse liquid Rp, Rq.

The figure which shows schematic structure of the thin film forming apparatus which concerns on 1st Embodiment. The figure which shows operation | movement of the thin film forming apparatus of FIG. The sequence diagram which shows the dummy dispensing operation | movement of the thin film forming apparatus of FIG. The figure which shows the process performed in the WF tact of the thin film forming apparatus of FIG.

Explanation of symbols

  W wafer, 1 cup, 2 suction pads, 3 motor, 4a-4n, 4p, 4q nozzle block, 5a-5n, 5p, 5q nozzle, 6a-6n, 6p, 6q arm, 7a-7n resist line, 7p, 7q Rinse line, 8-nozzle standby block, 9a-9n resist receptacle, 9p, 9q rinse receptacle, Ra-Rn resist, Rp, Rq rinse solution

Claims (8)

A plurality of nozzles for discharging droplets;
Transport means for transporting the nozzle from a standby position onto a processing target;
Ejection control means for ejecting droplets from the selected nozzle onto the processing target;
A film formation processing means for performing the film formation processing of the processing target by spreading the droplets on the processing target;
A thin film forming apparatus comprising: a dummy dispense processing unit that discharges droplets from other nozzles that are on standby during the film forming process to be processed. A plurality of nozzles for discharging resist;
Transport means for transporting the nozzle from the standby position onto the wafer;
Discharge control means for discharging a resist from the selected nozzle onto the wafer;
A film formation processing means for performing a film formation process of the resist on the wafer by rotating the wafer on which the resist is discharged;
A thin film forming apparatus comprising: a dummy dispense processing unit that discharges the resist from another nozzle that is on standby during the resist film forming process. A plurality of resist nozzles for discharging resist;
A rinse nozzle that discharges rinse liquid;
Transport means for transporting the resist nozzle and the rinse nozzle from the standby position onto the wafer;
A discharge control means for discharging a resist from the selected resist nozzle onto the wafer;
A film formation processing means for performing a film formation process of the resist by rotating the wafer on which the resist is discharged;
Rinse processing means for performing back rinse or edge rinse by discharging a rinse liquid from the rinse nozzle onto the wafer on which the resist is formed;
A thin film forming apparatus comprising: a dummy dispense processing unit that discharges a resist or a rinsing liquid from another nozzle waiting during the resist film forming process or the rinse process.   A method of forming a thin film, characterized in that, while performing dummy dispensing of some of the plurality of nozzles, droplets are ejected onto the processing target using other nozzles, and the film forming processing of the processing target is performed. . A step of discharging a resist onto the wafer from the selected nozzle;
A process of forming a resist film on the wafer by rotating the wafer on which the resist has been discharged;
And a step of discharging the resist from other nozzles waiting during the resist film formation process. A step of discharging a resist onto the wafer from the selected nozzle;
A process of forming a resist film on the wafer by rotating the wafer on which the resist has been discharged;
Back rinsing by discharging a rinsing liquid onto the back surface of the wafer on which the resist is formed; and
A step of performing edge rinsing by discharging a rinsing liquid to the edge of the wafer on which the resist is formed;
And a step of discharging the resist or the rinsing liquid from another nozzle waiting during the back rinsing or the edge rinsing during the resist film forming process. A step of discharging a resist from a selected nozzle onto a semiconductor wafer and performing a resist film forming process on the semiconductor wafer;
Discharging the resist from other nozzles waiting during the resist film formation process;
Forming a resist pattern on the semiconductor wafer by exposing and developing the resist formed on the semiconductor wafer; and
And a step of performing ion implantation or etching of the semiconductor wafer using the resist pattern as a mask. A step of discharging a resist from a selected nozzle onto a semiconductor wafer and performing a resist film forming process on the semiconductor wafer;
Back rinsing by discharging a rinsing liquid onto the back surface of the semiconductor wafer on which the resist is formed; and
A step of performing edge rinsing by discharging a rinsing liquid to an end portion of the semiconductor wafer on which the resist is formed;
Discharging the resist or the rinsing liquid from the other nozzles waiting during the back rinse or the edge rinse during the resist film formation process;
Forming a resist pattern on the semiconductor wafer by exposing and developing the resist formed on the semiconductor wafer; and
And a step of performing ion implantation or etching of the semiconductor wafer using the resist pattern as a mask.

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