JP2005079130A5 - - Google Patents

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Publication number
JP2005079130A5
JP2005079130A5 JP2003304255A JP2003304255A JP2005079130A5 JP 2005079130 A5 JP2005079130 A5 JP 2005079130A5 JP 2003304255 A JP2003304255 A JP 2003304255A JP 2003304255 A JP2003304255 A JP 2003304255A JP 2005079130 A5 JP2005079130 A5 JP 2005079130A5
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JP
Japan
Prior art keywords
wiring layer
film wiring
atomic
thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003304255A
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Japanese (ja)
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JP2005079130A (en
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Publication date
Application filed filed Critical
Priority to JP2003304255A priority Critical patent/JP2005079130A/en
Priority claimed from JP2003304255A external-priority patent/JP2005079130A/en
Publication of JP2005079130A publication Critical patent/JP2005079130A/en
Publication of JP2005079130A5 publication Critical patent/JP2005079130A5/ja
Withdrawn legal-status Critical Current

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Claims (4)

基板上に形成される薄膜配線層であって、Ａｌを主成分とする主導体層と該主導体層を覆う被覆層からなり、該被覆層は、（Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｍｏ、Ｗ）から選択される１種または２種以上の添加元素を３〜１５原子％含有し、残部が実質的にＮｉからなる合金層であることを特徴とする薄膜配線層。 A thin-film wiring layer formed on a substrate, comprising a main conductor layer mainly composed of Al and a coating layer covering the main conductor layer, the coating layer comprising (Ti, Zr, Hf, V, Nb, A thin film wiring layer comprising 3 to 15 atomic% of one or more additive elements selected from Ta, Mo, W), and the balance being an alloy layer substantially made of Ni. 添加元素は、（Ｖ、Ｎｂ、Ｔａ）から選択される１種又は２種以上であることを特徴とする請求項１に記載の薄膜配線層。 The thin film wiring layer according to claim 1, wherein the additive element is one or more selected from (V, Nb, Ta). 添加元素として、少なくともＮｂを１〜７原子％含有し、かつＭｏおよび／またはＷをＮｂとの合計で３〜１０原子％含有すること特徴とする請求項１に記載の薄膜配線層。 The thin film wiring layer according to claim 1, wherein the additive element contains at least Nb in an amount of 1 to 7 atomic% and Mo and / or W in a total amount of 3 to 10 atomic% with Nb. ガラス基板上に形成する配線層であることを特徴とする請求項１乃至３のいずれかに記載の薄膜配線層。 Thin-film wiring layer according to any one of claims 1 to 3, characterized in that a wiring layer formed on a glass substrate.
JP2003304255A 2003-08-28 2003-08-28 Thin film wiring layer Withdrawn JP2005079130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003304255A JP2005079130A (en) 2003-08-28 2003-08-28 Thin film wiring layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003304255A JP2005079130A (en) 2003-08-28 2003-08-28 Thin film wiring layer

Publications (2)

Publication Number Publication Date
JP2005079130A JP2005079130A (en) 2005-03-24
JP2005079130A5 true JP2005079130A5 (en) 2006-08-24

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ID=34407993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003304255A Withdrawn JP2005079130A (en) 2003-08-28 2003-08-28 Thin film wiring layer

Country Status (1)

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JP (1) JP2005079130A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4655281B2 (en) * 2005-03-29 2011-03-23 日立金属株式会社 Thin film wiring layer
TWI332720B (en) 2005-07-29 2010-11-01 Kyocera Corp Organic electrolum9iniscence element and its fabrication method
JP6016083B2 (en) 2011-08-19 2016-10-26 日立金属株式会社 Laminated wiring film for electronic parts and sputtering target material for coating layer formation
JP6361957B2 (en) * 2013-03-22 2018-07-25 日立金属株式会社 Laminated wiring film for electronic parts and sputtering target material for coating layer formation
JP5591411B1 (en) * 2013-07-03 2014-09-17 パイオニア株式会社 Organic EL device
JP6369750B2 (en) * 2013-09-10 2018-08-08 日立金属株式会社 LAMINATED WIRING FILM, MANUFACTURING METHOD THEREOF, AND NI ALLOY SPUTTERING TARGET MATERIAL
JP6681019B2 (en) * 2015-02-25 2020-04-15 日立金属株式会社 Sputtering target material for forming laminated wiring film and coating layer for electronic parts

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