JP5591411B1 - Organic EL device - Google Patents

Organic EL device Download PDF

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Publication number
JP5591411B1
JP5591411B1 JP2013556702A JP2013556702A JP5591411B1 JP 5591411 B1 JP5591411 B1 JP 5591411B1 JP 2013556702 A JP2013556702 A JP 2013556702A JP 2013556702 A JP2013556702 A JP 2013556702A JP 5591411 B1 JP5591411 B1 JP 5591411B1
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Prior art keywords
wiring
organic
conductive
covering portion
covering
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JPWO2015001627A1 (en
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秀隆 大峡
俊之 笠原
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Tohoku Pioneer Corp
Pioneer Corp
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Tohoku Pioneer Corp
Pioneer Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Mathematical Physics (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

配線（３）は、導電部（３Ａ）の上に第１被覆部（３Ｂ）を積層した構成を有している。第１被覆部（３Ｂ）は、例えば導電性の膜である。接続部材（５）は、例えばボンディングワイヤであり、後述するように、芯部（５Ａ）及び第２被覆部（５Ｂ）を備えている。第２被覆部（５Ｂ）は、芯部（５Ａ）を覆っている。接続部材（５）は、配線（３）に、第１被覆部（３Ｂ）側から接続している。そして、配線（３）と接続部材（５）との接続部の少なくとも一部は、導電部（３Ａ）と芯部（５Ａ）とが第１被覆部（３Ｂ）及び第２被覆部（５Ｂ）を介さずに接続している接合部となっている。   The wiring (3) has a configuration in which the first covering portion (3B) is laminated on the conductive portion (3A). The first covering portion (3B) is, for example, a conductive film. The connection member (5) is, for example, a bonding wire, and includes a core part (5A) and a second covering part (5B) as will be described later. The 2nd coating | coated part (5B) has covered the core part (5A). The connecting member (5) is connected to the wiring (3) from the first covering portion (3B) side. In addition, at least a part of the connection portion between the wiring (3) and the connection member (5) has a conductive portion (3A) and a core portion (5A) as a first covering portion (3B) and a second covering portion (5B). It becomes the junction part connected without going through.

Description

本発明は、光学装置及び有機ＥＬ装置に関する。   The present invention relates to an optical device and an organic EL device.

一つの基板上の配線と他の基板上の配線又は電極を電気的に接続する技術としては、異方性導電フィルム（Anisotropic Conductive Film、ACF）を用いた接続が一般的に知られている（下記特許文献１参照）。異方性導電フィルムは、熱硬化性樹脂に導電性を持つ微粒子を混ぜ合わせたものを膜状に成型したものである。   As a technique for electrically connecting a wiring on one substrate and a wiring or an electrode on another substrate, a connection using an anisotropic conductive film (ACF) is generally known ( See Patent Document 1 below). An anisotropic conductive film is a film formed by mixing a thermosetting resin with conductive fine particles.

一方、半導体素子を基板上に実装する技術として、ワイヤボンディングを用いた技術が知られている。この技術は、ボンディングワイヤの両端を、接続対象の端子又は配線に接続するものである（下記特許文献１、２参照）。また、有機ＥＬ装置などに用いられるガラス基板にワイヤボンディングを利用するものもある（下記特許文献３参照）。   On the other hand, as a technique for mounting a semiconductor element on a substrate, a technique using wire bonding is known. In this technique, both ends of a bonding wire are connected to terminals or wirings to be connected (see Patent Documents 1 and 2 below). Some glass substrates used in organic EL devices and the like utilize wire bonding (see Patent Document 3 below).

特開２００９−２８２２８５号公報JP 2009-282285 A 特開２００１−２４０２７号公報JP 2001-24027 A 特開２０１３−６９９１２号公報JP2013-69912A

配線の導体部の上には、被覆部が形成されていることがある。この被覆部は、導体部そのものが酸化した酸化膜の場合もあるし、導体部とは別の材料で形成された膜の場合もある。このように、配線の導体部が被覆部で覆われていた場合、ボンディングワイヤとして、金ワイヤなどの比較的柔らかい材料からなるものを用いると、配線の導体部とボンディングワイヤを直接接続することが困難になる。配線の導体部とボンディングワイヤが直接接続しない場合、これらの間の接続抵抗は高くなる。   A covering portion may be formed on the conductor portion of the wiring. The covering portion may be an oxide film obtained by oxidizing the conductor portion itself, or may be a film formed of a material different from the conductor portion. Thus, when the conductor portion of the wiring is covered with the covering portion, if the bonding wire is made of a relatively soft material such as a gold wire, the wiring conductor portion and the bonding wire can be directly connected. It becomes difficult. When the conductor portion of the wiring and the bonding wire are not directly connected, the connection resistance between them becomes high.

また、特許文献３のように、有機ＥＬ装置にワイヤボンディングを利用する場合、有機ＥＬ装置を構成する有機ＥＬ素子（上部電極、有機層、下部電極）を電流で駆動する必要がある。このため、配線に対し、必要な電流が流れるように配線とボンディングワイヤの接続部の接続抵抗を低くする必要がある。接続抵抗を下げることにより、駆動電圧を下げ、有機ＥＬ装置の輝度を上げる工夫が必要となる。   Further, as in Patent Document 3, when wire bonding is used in an organic EL device, it is necessary to drive organic EL elements (upper electrode, organic layer, lower electrode) constituting the organic EL device with current. For this reason, it is necessary to lower the connection resistance of the connection portion between the wiring and the bonding wire so that a necessary current flows through the wiring. By reducing the connection resistance, it is necessary to devise a technique for reducing the drive voltage and increasing the luminance of the organic EL device.

本発明が解決しようとする課題としては、配線の導体部の上に被覆膜が形成されている場合において、配線と接続部材との間の接続抵抗を低くすることが一例として挙げられる。   An example of a problem to be solved by the present invention is to lower the connection resistance between the wiring and the connection member when a coating film is formed on the conductor portion of the wiring.

請求項１に記載の発明は、光学素子と、
導電部の上に第１被覆部を積層し、前記光学素子に電気的に接続している配線と、
芯部、及び前記芯部を覆う第２被覆部を備え、前記配線に前記第１被覆部側から接続する接続部材と、
を備え、
前記配線と前記接続部材との接続部の少なくとも一部は、前記導電部と前記芯部とが前記第１被覆部及び前記第２被覆部を介さずに接続している接合部となっている光学装置である。The invention according to claim 1 is an optical element;
A first covering portion is laminated on the conductive portion, and the wiring is electrically connected to the optical element;
A connecting member connected to the wiring from the first covering portion side, comprising a core portion and a second covering portion covering the core portion;
With
At least a part of the connection portion between the wiring and the connection member is a joint portion where the conductive portion and the core portion are connected without the first covering portion and the second covering portion. It is an optical device.

請求項６に記載の発明は、下部電極と、上部電極と、前記下部電極と前記上部電極の間に位置する有機層と、を備えた有機ＥＬ素子と、
導電部の上に第１被覆部を積層し、前記上部電極又は前記下部電極と電気的に接続している配線と、
銅を主成分とする芯部、及び前記芯部を覆う第２被覆部を備え、前記配線に前記第１被覆部側から接続する接続部材と、
前記配線と前記接続部材との接続部の少なくとも一部は、前記導電部を構成する金属と前記銅の金属間化合物が形成されている有機ＥＬ装置である。The invention according to claim 6 is an organic EL device comprising a lower electrode, an upper electrode, and an organic layer positioned between the lower electrode and the upper electrode,
A first covering portion is laminated on the conductive portion, and a wiring electrically connected to the upper electrode or the lower electrode;
A core part mainly composed of copper, and a second covering part covering the core part, and a connection member connected to the wiring from the first covering part side;
At least a part of the connection portion between the wiring and the connection member is an organic EL device in which a metal constituting the conductive portion and the copper intermetallic compound are formed.

上述した目的、およびその他の目的、特徴および利点は、以下に述べる好適な実施の形態、およびそれに付随する以下の図面によってさらに明らかになる。   The above-described object and other objects, features, and advantages will become more apparent from the preferred embodiments described below and the accompanying drawings.

実施形態に係る光学装置の構成を示す断面図である。It is sectional drawing which shows the structure of the optical apparatus which concerns on embodiment. 配線と接続部材の接続構造、及び配線と接続部材の接続構造の詳細例を示す図である。It is a figure which shows the detailed example of the connection structure of wiring and a connection member, and the connection structure of wiring and a connection member. 実施例１に係る有機ＥＬ装置の構成を示す断面図である。1 is a cross-sectional view illustrating a configuration of an organic EL device according to Example 1. FIG. 図３のうち有機ＥＬ装置の端部の拡大図である。It is an enlarged view of the edge part of an organic electroluminescent apparatus among FIG. 図４のうち引出配線とボンディングワイヤの接続部を説明するための図である。It is a figure for demonstrating the connection part of leader wiring and a bonding wire among FIG. 有機ＥＬ装置を基板の光射出面側から見た平面図である。It is the top view which looked at the organic electroluminescent apparatus from the light-projection surface side of the board | substrate. 比較例に係る有機ＥＬ装置の構成を示す断面図である。It is sectional drawing which shows the structure of the organic electroluminescent apparatus concerning a comparative example. 引出配線とフレキシブル基板の接続部を説明するための図である。It is a figure for demonstrating the connection part of leader wiring and a flexible substrate. 実施例２に係る液晶装置の構成を示す断面図である。7 is a cross-sectional view illustrating a configuration of a liquid crystal device according to Example 2. FIG.

以下、図面を参照しながら実施形態を説明する。尚、すべての図面において、同様な構成要素には同様の符号を付し、適宜説明を省略する。   Hereinafter, embodiments will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

図１は、実施形態に係る光学装置の構成を示す断面図である。この光学装置は、例えば有機ＥＬ（Organic Electroluminescence）装置である。以下、光学装置が有機ＥＬ装置１００として、説明を行う。   FIG. 1 is a cross-sectional view illustrating a configuration of an optical device according to an embodiment. This optical device is, for example, an organic EL (Organic Electroluminescence) device. Hereinafter, the optical device will be described as the organic EL device 100.

本実施形態に係る有機ＥＬ装置１００は、有機ＥＬ素子１０、配線３、及び接続部材５を備えている。配線３は、後述するように、導電部３Ａの上に第１被覆部３Ｂを積層した構成を有している。第１被覆部３Ｂは、例えば導電性の膜である。接続部材５は、例えばボンディングワイヤであり、後述するように、芯部５Ａ及び第２被覆部５Ｂを備えている。第２被覆部５Ｂは、芯部５Ａを覆っている。接続部材５は、配線３に、第１被覆部３Ｂ側から接続している。そして、配線３と接続部材５との接続部の少なくとも一部は、導電部３Ａと芯部５Ａとが第１被覆部３Ｂ及び第２被覆部５Ｂを介さずに接続している接合部となっている。以下、詳細に説明する。   An organic EL device 100 according to this embodiment includes an organic EL element 10, a wiring 3, and a connection member 5. As will be described later, the wiring 3 has a configuration in which the first covering portion 3B is laminated on the conductive portion 3A. The first covering portion 3B is a conductive film, for example. The connecting member 5 is, for example, a bonding wire, and includes a core portion 5A and a second covering portion 5B as will be described later. The second covering portion 5B covers the core portion 5A. The connecting member 5 is connected to the wiring 3 from the first covering portion 3B side. At least a part of the connection portion between the wiring 3 and the connection member 5 is a joint portion where the conductive portion 3A and the core portion 5A are connected without the first covering portion 3B and the second covering portion 5B. ing. Details will be described below.

有機ＥＬ装置１００は、例えば照明装置又はディスプレイ装置である。本図に示す例において、有機ＥＬ素子１０は、基板１の第１面に形成されている。基板１は、可撓性を有していても良い。有機ＥＬ素子１０が発光素子である場合、基板１の第１面とは逆側の面（第２面）が光射出面となっている。この場合、基板１は、有機ＥＬ素子１０が発光する光に対して透光性を有する材料により形成されている。このような材料としては、例えばガラスや樹脂材料がある。ただし、基板１の第１面側が光射出面であっても良い。この場合、基板１は、有機ＥＬ素子１０が発光する光に対して透光性を有していなくてもよい。   The organic EL device 100 is, for example, a lighting device or a display device. In the example shown in this figure, the organic EL element 10 is formed on the first surface of the substrate 1. The substrate 1 may have flexibility. When the organic EL element 10 is a light emitting element, a surface (second surface) opposite to the first surface of the substrate 1 is a light emitting surface. In this case, the substrate 1 is formed of a material that is transparent to the light emitted from the organic EL element 10. Examples of such materials include glass and resin materials. However, the first surface side of the substrate 1 may be a light emitting surface. In this case, the substrate 1 may not have translucency with respect to the light emitted from the organic EL element 10.

有機ＥＬ素子１０は、下部電極１１、有機層１２、及び上部電極１３を有している。有機層１２は、下部電極１１と上部電極１３の間に位置しており、有機機能層、例えば発光層を有している。本図に示す例において、下部電極１１は基板１の上に形成されている。ただし、基板１と下部電極１１の間に他の層（例えば絶縁層）が設けられていても良い。下部電極１１及び上部電極１３は、いずれも互いに異なる配線３に接続している。いずれの配線３も、基板１の第１面に形成されている。本図に示す例において、下部電極１１に接続する配線３は、下部電極１１の少なくとも一部を構成する導電層と一体になっている。ただし、この配線３も、下部電極１１とは異なる導電層で形成されていても良い。   The organic EL element 10 includes a lower electrode 11, an organic layer 12, and an upper electrode 13. The organic layer 12 is located between the lower electrode 11 and the upper electrode 13, and has an organic functional layer, for example, a light emitting layer. In the example shown in this figure, the lower electrode 11 is formed on the substrate 1. However, another layer (for example, an insulating layer) may be provided between the substrate 1 and the lower electrode 11. The lower electrode 11 and the upper electrode 13 are both connected to different wirings 3. All the wirings 3 are formed on the first surface of the substrate 1. In the example shown in this figure, the wiring 3 connected to the lower electrode 11 is integrated with a conductive layer constituting at least a part of the lower electrode 11. However, the wiring 3 may also be formed of a conductive layer different from the lower electrode 11.

接続部材５の一端は配線３に接続されており、接続部材５の他端は、配線４に接続されている。配線４は、基板２の上に形成されている。基板２は、例えばＦＰＣ（Flexible Printed Circuits）又はＰＣＢ（Printed Circuit Board）などの配線基板又は回路基板である。   One end of the connection member 5 is connected to the wiring 3, and the other end of the connection member 5 is connected to the wiring 4. The wiring 4 is formed on the substrate 2. The substrate 2 is a wiring substrate or a circuit substrate such as an FPC (Flexible Printed Circuits) or a PCB (Printed Circuit Board).

なお、本図に示す例では、接続部材５の他端は基板２に接続しているが、基板１の上に形成された他の導電部に接続していても良い。   In the example shown in the figure, the other end of the connection member 5 is connected to the substrate 2, but may be connected to another conductive portion formed on the substrate 1.

図２は、配線３と接続部材５の接続構造、及び配線４と接続部材５の接続構造の詳細例を示す図である。   FIG. 2 is a diagram illustrating a detailed example of a connection structure between the wiring 3 and the connection member 5 and a connection structure between the wiring 4 and the connection member 5.

配線３は、導電部３Ａと第１被覆部３Ｂを備えている。導電部３Ａ及び第１被覆部３Ｂは、いずれも導電性の材料によって形成されている。ただし、第１被覆部３Ｂは導電部３Ａの保護膜として機能するようにその材料が選択されているため、第１被覆部３Ｂのシート抵抗は、導電部３Ａのシート抵抗よりも高くなっている。   The wiring 3 includes a conductive portion 3A and a first covering portion 3B. The conductive part 3A and the first covering part 3B are both made of a conductive material. However, since the material of the first covering portion 3B is selected so as to function as a protective film for the conductive portion 3A, the sheet resistance of the first covering portion 3B is higher than the sheet resistance of the conductive portion 3A. .

導電部３Ａは、金属（第１金属）、例えば、アルミニウム（Ａｌ）、ニッケル（Ｎｉ）、銅（Ｃｕ）、クロム（Ｃｒ）、ロジウム（Ｒｈ）、鉄（Ｆｅ）、又は白金（Ｐｔ）などの単体又はこれらの金属を主成分として含む合金、これら金属と公知の無機物を含む合金によって構成されている。これらの金属又は合金の硬度（ビッカース硬さ）は、金の硬度に対して大きい。例えば、アルミニウム（Ａｌ）のビッカース硬さは３０〜１００ＨＶ程度である。   The conductive portion 3A is a metal (first metal), for example, aluminum (Al), nickel (Ni), copper (Cu), chromium (Cr), rhodium (Rh), iron (Fe), platinum (Pt), etc. Or an alloy containing these metals as a main component, or an alloy containing these metals and a known inorganic substance. The hardness (Vickers hardness) of these metals or alloys is larger than the hardness of gold. For example, the Vickers hardness of aluminum (Al) is about 30 to 100 HV.

第１被覆部３Ｂは、例えば、酸化金属などの酸化物で構成される酸化膜、金属の酸化を抑止できるパラジウム（Pd）などの酸化防止膜、フォトリソグラフィで用いるエッチャントにより金属が腐食することを抑止する腐食防止膜等である。第１被覆部３Ｂは、導電部３Ａの少なくとも一部を覆っていればよい。   For example, the first covering portion 3B is formed by preventing the metal from being corroded by an oxide film made of an oxide such as a metal oxide, an anti-oxidation film such as palladium (Pd) capable of suppressing metal oxidation, and an etchant used in photolithography. It is a corrosion prevention film to suppress. The 1st coating | coated part 3B should just cover at least one part of 3 A of electroconductive parts.

具体的には、第１被覆部３Ｂは、金属（第３金属）を有している。この金属は、塊の状態において、導電部３Ａに含まれる金属よりも堅い。第１被覆部３Ｂは、モリブデン（Ｍｏ）、ニッケル（Ｎｉ）、ニオブ（Ｎｂ）、又はパラジウム（Ｐｄ）などの単体又は合金によって構成することができる。ここで、これら複数の金属のうちの一つを用いて第１被覆部３Ｂを形成すると、第１被覆部３Ｂの硬度は少なくとも金の硬度に対して大きくなる。また、第１被覆部３Ｂは、酸化金属、例えば酸化アルミニウムによって構成することができる。酸化アルミニウムのビッカース硬さは１６００ＨＶ程度であり、金の硬度に対して大きい。   Specifically, the 1st coating | coated part 3B has a metal (3rd metal). This metal is harder than the metal contained in the conductive portion 3A in a lump state. The 1st coating | coated part 3B can be comprised with single-piece | units or alloys, such as molybdenum (Mo), nickel (Ni), niobium (Nb), or palladium (Pd). Here, if the 1st coating | coated part 3B is formed using one of these several metals, the hardness of the 1st coating | coated part 3B will become large at least with respect to the hardness of gold | metal | money. Moreover, the 1st coating | coated part 3B can be comprised with a metal oxide, for example, aluminum oxide. The Vickers hardness of aluminum oxide is about 1600 HV, which is large with respect to the hardness of gold.

第１被覆部３Ｂが酸化金属によって形成されている場合、第１被覆部３Ｂは、導電部３Ａを構成する金属（例えばＡｌ）の酸化物（例えば酸化Ａｌ）であっても良い。この場合、第１被覆部３Ｂは、導電部３Ａの表面を酸化することにより形成される。この酸化プロセスは、例えば、有機ＥＬ装置１００の製造プロセスにおけるウェット処理工程、蒸着工程、又はエッチング工程の少なくとも一つと兼ねることができる。   When the first covering portion 3B is formed of metal oxide, the first covering portion 3B may be an oxide (for example, Al oxide) of a metal (for example, Al) constituting the conductive portion 3A. In this case, the first covering portion 3B is formed by oxidizing the surface of the conductive portion 3A. This oxidation process can also serve as at least one of a wet treatment process, a vapor deposition process, or an etching process in the manufacturing process of the organic EL device 100, for example.

配線３のうち接続部材５に接続する部分は、電極又は接続端子になっていてもよい。同様に、配線４のうち接続部材５に接続する部分は、電極又は接続端子になっていてもよい。   A portion of the wiring 3 that is connected to the connection member 5 may be an electrode or a connection terminal. Similarly, a portion of the wiring 4 that is connected to the connection member 5 may be an electrode or a connection terminal.

配線４は導電部４Ａを備えている。本図に示す例では、導電部４Ａの上に被覆部は形成されていない。ただし、導電部４Ａの上に、第１被覆部３Ｂと同様の被覆部が形成されていても良い。   The wiring 4 includes a conductive portion 4A. In the example shown in this figure, the covering portion is not formed on the conductive portion 4A. However, a covering portion similar to the first covering portion 3B may be formed on the conductive portion 4A.

接続部材５は、金（ビッカース硬さ２２ＨＶ）より硬い材料で構成されているのが好ましい。接続部材５は、例えば、ボンディングワイヤのような線状又は帯状の配線である。接続部材５の幅は、配線３又は配線４の幅に対して小さいが、同程度であっても良い。接続部材５の芯部５Ａを構成する材料は、銀（ビッカース硬さ２４ＨＶ）、銅（ビッカース硬さ７０ＨＶ程度）、白金（ビッカース硬さ４１ＨＶ）、クロム（ビッカース硬さ７５０ＨＶ以上）などの金属である。このような硬い導電性材料を接続部材５に用いることで、接続部材５を構成する材料の硬度を金の硬度より大きくすることができる。この際、接続部材５を構成する材料は単一材料成分である必要はなく、複数の材料成分を有する合金であってもよい。   The connecting member 5 is preferably made of a material harder than gold (Vickers hardness 22HV). The connection member 5 is, for example, a linear or strip-like wiring such as a bonding wire. The width of the connecting member 5 is smaller than the width of the wiring 3 or the wiring 4, but may be the same. The material constituting the core portion 5A of the connection member 5 is a metal such as silver (Vickers hardness 24HV), copper (Vickers hardness 70HV), platinum (Vickers hardness 41HV), chromium (Vickers hardness 750HV or more). is there. By using such a hard conductive material for the connection member 5, the hardness of the material constituting the connection member 5 can be made larger than the hardness of gold. At this time, the material constituting the connection member 5 does not have to be a single material component, and may be an alloy having a plurality of material components.

接続部材５は、芯部５Ａと芯部５Ａの周囲を覆う第２被覆部５Ｂを有している。芯部５Ａ及び第２被覆部５Ｂは、いずれも導電性の材料により形成されている。接続部材５を芯部５Ａと第２被覆部５Ｂの２重構造にすることで、接続部材５の一部（端部など）又は全体の硬さを高めることができる。第２被覆部５Ｂの硬度を芯部５Ａの硬度に対して略同じ又は大きくすることで、実質的に接続部材５の硬さを大きくすることができる。一例としては、芯部５Ａの材料を純度９９．９質量％の銅（Ｃｕ）とし、第２被覆部５Ｂの材料を純度９９．９質量％のパラジウム（Ｐｄ）又は白金（Ｐｔ）として、第２被覆部５Ｂをスパッタリングや蒸着やメッキなどで薄膜形成することで、第２被覆部５Ｂの硬度を芯部５Ａの硬度に対して大きくすることができる。   The connecting member 5 has a core portion 5A and a second covering portion 5B that covers the periphery of the core portion 5A. Each of the core portion 5A and the second covering portion 5B is formed of a conductive material. By making the connecting member 5 have a double structure of the core portion 5A and the second covering portion 5B, it is possible to increase a part of the connecting member 5 (such as an end portion) or the entire hardness. By making the hardness of the second covering portion 5B substantially the same or larger than the hardness of the core portion 5A, the hardness of the connecting member 5 can be substantially increased. As an example, the material of the core 5A is made of copper (Cu) with a purity of 99.9% by mass, and the material of the second covering part 5B is made of palladium (Pd) or platinum (Pt) with a purity of 99.9% by mass. The hardness of the second covering portion 5B can be increased with respect to the hardness of the core portion 5A by forming a thin film on the two covering portions 5B by sputtering, vapor deposition, plating, or the like.

図示の例では、接続部材５は芯部５Ａと第２被覆部５Ｂとで構成されているが、芯部５Ａと芯部５Ａを覆う筒状部であっても構わない。ここでいう筒状部とは、接続部材５の端部が筒状部で覆われていないものを指し、筒状部の端部は開口されている。そして、芯部５Ａの端部は筒状部から露出している。   In the illustrated example, the connecting member 5 includes the core portion 5A and the second covering portion 5B. However, the connecting member 5 may be a cylindrical portion that covers the core portion 5A and the core portion 5A. The cylindrical part here refers to the end of the connecting member 5 that is not covered with the cylindrical part, and the end of the cylindrical part is open. And the edge part of 5 A of core parts is exposed from the cylindrical part.

そして、接続部材５は、第１被覆部３Ｂを通過して導電部３Ａに接続している。詳細には、第１被覆部３Ｂは、配線３が接続部材５と接続している部分の少なくとも一部に開口を有している。同様に、第２被覆部５Ｂは、配線３と接続部材５が接続している部分の少なくとも一部に開口を有している。そして、これらの開口を介して、導電部３Ａと芯部５Ａは直接接続し、接合部を形成している。そしてこの接合部の少なくとも一部には、金属間化合物５Ｃが形成されている。金属間化合物５Ｃは、導電部３Ａに含まれる金属（第１金属）と芯部５Ａに含まれる金属（第２金属）の金属間化合物（又は合金）である。例えば芯部５ＡがＣｕを主成分としており、導電部３ＡがＡｌを主成分としている場合、金属間化合物５ＣはＣｕとＡｌの合金、例えばＡｌ２Ｃｕである。なお、第１被覆部３Ｂが金属などの導電材料によって形成されている場合、導電部３Ａと芯部５Ａの電気的接続は、第１被覆部３Ｂを介しても行われる。The connecting member 5 passes through the first covering portion 3B and is connected to the conductive portion 3A. Specifically, the first covering portion 3 </ b> B has an opening in at least a part of the portion where the wiring 3 is connected to the connecting member 5. Similarly, the 2nd coating | coated part 5B has an opening in at least one part of the part which the wiring 3 and the connection member 5 connect. The conductive portion 3A and the core portion 5A are directly connected through these openings to form a joint portion. And the intermetallic compound 5C is formed in at least one part of this junction part. The intermetallic compound 5C is an intermetallic compound (or alloy) of a metal (first metal) included in the conductive portion 3A and a metal (second metal) included in the core portion 5A. For example, when the core portion 5A has Cu as a main component and the conductive portion 3A has Al as a main component, the intermetallic compound 5C is an alloy of Cu and Al, for example, Al 2 Cu. In addition, when the 1st coating | coated part 3B is formed with electrically conductive materials, such as a metal, the electrical connection of 3 A of conductive parts and the core part 5A is also performed via the 1st coating | coated part 3B.

接続部材５が第１被覆部３Ｂを通過して導電部３Ａと接続する構造を得るためには、第１被覆部３Ｂの厚さや硬さが特定の範囲内にあるのが好ましい。第１被覆部３Ｂの厚さは、第２被覆部５Ｂの厚さに対して略同じ又は小さくしても構わない。第１被覆部３Ｂの厚さを比較的小さくすることで、第１被覆部３Ｂを通過して接続部材５を導電部３Ａに接続し易くできる。一方、配線３をフォトリソグラフィで形成する場合には、第１被覆部３Ｂは導電部３Ａの酸化や腐食等を抑止すべく所望の厚さを有する必要がある。そのため、例えば、第１被覆部３Ｂの厚さは、０．０１〜１μｍ程度に設定することができ、第２被覆部５Ｂの厚さは０．０２〜８μｍ程度に設定することができる。   In order to obtain a structure in which the connecting member 5 passes through the first covering portion 3B and is connected to the conductive portion 3A, it is preferable that the thickness and hardness of the first covering portion 3B are within a specific range. The thickness of the first covering portion 3B may be substantially the same as or smaller than the thickness of the second covering portion 5B. By making the thickness of the first covering portion 3B relatively small, it is possible to easily connect the connecting member 5 to the conductive portion 3A through the first covering portion 3B. On the other hand, when the wiring 3 is formed by photolithography, the first covering portion 3B needs to have a desired thickness in order to suppress oxidation or corrosion of the conductive portion 3A. Therefore, for example, the thickness of the first covering portion 3B can be set to about 0.01 to 1 μm, and the thickness of the second covering portion 5B can be set to about 0.02 to 8 μm.

第１被覆部３Ｂの硬さは、芯部５Ａの硬さ又は第２被覆部５Ｂの硬さに対して、小さいことが好ましい。接続部材５の一部又は全体の硬度は、金の硬度より大きく、第１被覆部３Ｂの硬度より大きい。芯部５Ａ又は第２被覆部５Ｂの硬さに対して第１被覆部３Ｂの硬さを小さくすることで、超音波が伝搬された接続部材５が第１被覆部３Ｂを突き破ること（貫通）、研削すること、第１被覆部３Ｂを破くこと、及び、破かれた第１被覆部３Ｂの一部を接続部材５から外側に向けて移動させることが容易になり、その結果、接続部材５が第１被覆部３Ｂを通過して導電部３Ａに到達するのが容易になる。   The hardness of the first covering portion 3B is preferably smaller than the hardness of the core portion 5A or the hardness of the second covering portion 5B. The hardness of a part or the whole of the connecting member 5 is larger than that of gold and larger than that of the first covering portion 3B. By reducing the hardness of the first covering portion 3B relative to the hardness of the core portion 5A or the second covering portion 5B, the connection member 5 to which the ultrasonic wave has propagated breaks through the first covering portion 3B (penetration). , Grinding, breaking the first covering portion 3B, and moving a part of the broken first covering portion 3B outward from the connecting member 5, and as a result, the connecting member 5 Can easily reach the conductive portion 3A through the first covering portion 3B.

また、配線３がフォトリソグラフィ工程などの製造工程を経て加熱されている場合には、この加熱によって配線３の表面（例えば第１被覆部３Ｂ）が硬質化してしまう場合がある。このような場合、接続部材５として、金などの比較的柔らかい材料を用いると、配線３と接続部材５の電気的な接続を確実に行うことができない場合がある。これに対して、接続部材５に第２被覆部５Ｂをもたせると、接続部材５を、第１被覆部３Ｂを通過させて導電部３Ａに到達させることが可能になる。   When the wiring 3 is heated through a manufacturing process such as a photolithography process, the surface of the wiring 3 (for example, the first covering portion 3B) may be hardened by this heating. In such a case, if a relatively soft material such as gold is used as the connection member 5, the electrical connection between the wiring 3 and the connection member 5 may not be reliably performed. In contrast, when the connecting member 5 has the second covering portion 5B, the connecting member 5 can reach the conductive portion 3A through the first covering portion 3B.

なお、配線３と接続部材５の接続部において、接続部材５に対面する第１被覆部３Ｂの内周部３ｔを、接続部材５から基板１に向かう方向に傾斜させることができる。この第１被覆部３Ｂの内周部３ｔは、第１被覆部３Ｂに対して接続部材５による突き破り（貫通）、切削、第１被覆部３Ｂを破くこと、又は破かれた第１被覆部３Ｂの一部を接続部材５から外側に向けて移動させることで形成することができるが、接続部材５との接続に先立って予め第１被覆部３Ｂに開口部を形成しておくこともできる。   In the connection portion between the wiring 3 and the connection member 5, the inner peripheral portion 3 t of the first covering portion 3 </ b> B facing the connection member 5 can be inclined in the direction from the connection member 5 toward the substrate 1. The inner peripheral portion 3t of the first covering portion 3B is pierced (penetrated) by the connecting member 5 with respect to the first covering portion 3B, cut, torn the first covering portion 3B, or torn first covering portion 3B. However, it is also possible to form an opening in the first covering portion 3B in advance prior to connection with the connection member 5.

以上、本実施形態によれば、接続部材５と配線３の接続部の少なくとも一部において、接続部材５の芯部５Ａと配線３の導電部３Ａは、第２被覆部５Ｂ及び第１被覆部３Ｂのいずれも介さずに接続している。従って、接続部材５と配線３の間の接続抵抗を低くすることができる。   As described above, according to the present embodiment, in at least a part of the connection portion between the connection member 5 and the wiring 3, the core portion 5 </ b> A of the connection member 5 and the conductive portion 3 </ b> A of the wiring 3 are the second covering portion 5 </ b> B and the first covering portion. It connects without interposing all of 3B. Therefore, the connection resistance between the connection member 5 and the wiring 3 can be reduced.

また、芯部５Ａと導電部３Ａの接続部には、金属間化合物５Ｃが形成されている。このため、芯部５Ａと導電部３Ａの接合の機械的強度が向上するとともに、これらの間の接続抵抗が小さくなる。   Further, an intermetallic compound 5C is formed at the connecting portion between the core portion 5A and the conductive portion 3A. For this reason, the mechanical strength of the joining of the core portion 5A and the conductive portion 3A is improved, and the connection resistance between them is reduced.

（実施例１）
図３は、実施例１に係る有機ＥＬ装置１００の構成を示す断面図である。有機ＥＬ素子１０は、封止空間Ｓ内に配置されている。封止空間Ｓは、基板１と封止部材１６とを接着層１７で貼り合わせることで形成されている。基板１の第１面のうち封止空間Ｓの外側に位置する領域には、引出配線１８が引き出されている。引出配線１８の一端は、有機ＥＬ素子１０に接続されており、引出配線１８の他端は封止部材１６の外側に位置している。Example 1
FIG. 3 is a cross-sectional view illustrating a configuration of the organic EL device 100 according to the first embodiment. The organic EL element 10 is disposed in the sealed space S. The sealing space S is formed by bonding the substrate 1 and the sealing member 16 with the adhesive layer 17. In an area located outside the sealing space S on the first surface of the substrate 1, a lead wiring 18 is drawn out. One end of the lead wiring 18 is connected to the organic EL element 10, and the other end of the lead wiring 18 is located outside the sealing member 16.

以下、有機ＥＬ装置１００を発光装置として説明を行う。ここで発光装置は、例えば、照明装置又は表示装置である。ここで表示装置は文字を表示したり、画像を表示したり、色を表示する。表示装置の駆動方式は、ＡＭＯＬＥＤ駆動方式でもよく、ＰＭＯＬＥＤ駆動方式でもかまわない。照明装置は、人、物を照らすこと、或いは室内の明るさを調整する。照明装置は、調光可能であっても良い。   Hereinafter, the organic EL device 100 will be described as a light emitting device. Here, the light emitting device is, for example, a lighting device or a display device. Here, the display device displays characters, displays images, and displays colors. The driving method of the display device may be an AMOLED driving method or a PMOLED driving method. The lighting device illuminates a person or an object, or adjusts the brightness of the room. The lighting device may be dimmable.

封止部材１６のうち封止空間Ｓとは逆側の面（背面）には、回路基板２０Ａが配置されている。回路基板２０Ａには、有機ＥＬ素子１０を駆動する駆動用ＩＣ２１（制御部）が実装されている。駆動用ＩＣ２１は、ボンディングワイヤ２４を介して回路基板２０Ａの配線２２に接続している。回路基板２０Ａは、例えばＰＣＢである。そして、配線２２は、ボンディングワイヤ２３を介して引出配線１８に接続している。ここで、引出配線１８が実施形態における配線３に対応しており、配線２２が実施形態における配線４に対応している。そして、ボンディングワイヤ２３が実施形態における接続部材５に対応している。図示しないが、ボンディングワイヤ２３、２４は、モールド樹脂で封止されている。   The circuit board 20 </ b> A is disposed on the surface (back surface) of the sealing member 16 opposite to the sealing space S. A driving IC 21 (control unit) for driving the organic EL element 10 is mounted on the circuit board 20A. The driving IC 21 is connected to the wiring 22 of the circuit board 20 </ b> A via the bonding wire 24. The circuit board 20A is, for example, a PCB. The wiring 22 is connected to the lead-out wiring 18 via the bonding wire 23. Here, the lead-out wiring 18 corresponds to the wiring 3 in the embodiment, and the wiring 22 corresponds to the wiring 4 in the embodiment. And the bonding wire 23 respond | corresponds to the connection member 5 in embodiment. Although not shown, the bonding wires 23 and 24 are sealed with a mold resin.

図４は、図３のうち有機ＥＬ装置１００の端部の拡大図である。本実施例において、有機ＥＬ装置１００は、基板１と、基板１の第１面上に直接又は他の層を介して形成された下部電極１１と、下部電極１１上に積層された有機層１２と、有機層１２上に形成された上部電極１３を備えている。そして、下部電極１１、有機層１２、及び上部電極１３によって有機ＥＬ素子１０の少なくとも一部が構成されている。有機ＥＬ素子１０は、下部電極１１上の絶縁膜１４で区画されることで、ドットマトリクス状又はストライプ状になっている。図示の例では、下部電極１１は図中左右方向にストライプ状に形成されている。そして、絶縁膜１４上には、下部電極１１と交差する方向（図３においては紙面に垂直な方向）に、ストライプ状の隔壁１５が形成されている。隔壁１５によって、有機ＥＬ素子１０の有機層１２は、隔壁１５と同じ方向にストライプ状に区画されている。そして上部電極１３は、有機層１２の上に、下部電極１１と交差する方向（すなわち有機層１２と同じ方向）にストライプ状に形成されている。上部電極１３は、例えばＡｌによって形成されている。なお、下部電極１１及び上部電極１３は、互いに異なる引出配線１８に接続している。なお、引出配線１８は、導電部３Ａの下に、下部電極１１と同様の材料からなる導電層（例えば透明導電層）が形成されていても良い。また、下部電極１１及び上部電極１３の一方は、所謂ベタ電極であっても良い。   FIG. 4 is an enlarged view of an end portion of the organic EL device 100 in FIG. In the present embodiment, the organic EL device 100 includes a substrate 1, a lower electrode 11 formed on the first surface of the substrate 1 directly or via another layer, and an organic layer 12 stacked on the lower electrode 11. And an upper electrode 13 formed on the organic layer 12. The lower electrode 11, the organic layer 12, and the upper electrode 13 constitute at least a part of the organic EL element 10. The organic EL element 10 is partitioned by an insulating film 14 on the lower electrode 11 to form a dot matrix or a stripe. In the illustrated example, the lower electrode 11 is formed in a stripe shape in the left-right direction in the drawing. On the insulating film 14, stripe-shaped partition walls 15 are formed in a direction intersecting with the lower electrode 11 (a direction perpendicular to the paper surface in FIG. 3). By the partition wall 15, the organic layer 12 of the organic EL element 10 is partitioned in a stripe shape in the same direction as the partition wall 15. The upper electrode 13 is formed in stripes on the organic layer 12 in a direction intersecting with the lower electrode 11 (that is, in the same direction as the organic layer 12). The upper electrode 13 is made of, for example, Al. The lower electrode 11 and the upper electrode 13 are connected to different lead wires 18. In the lead-out wiring 18, a conductive layer (for example, a transparent conductive layer) made of the same material as that of the lower electrode 11 may be formed under the conductive portion 3A. One of the lower electrode 11 and the upper electrode 13 may be a so-called solid electrode.

図５は、図４のうち引出配線１８とボンディングワイヤ２３の接続部を説明するための図である。ボンディングワイヤ２３の芯部５Ａは、引出配線１８の第１被覆部３Ｂを突き破っており、引出配線１８の導電部３Ａに接続している。そして芯部５Ａと導電部３Ａが直接接続している部分には、金属間化合物５Ｃが形成されている。なお、芯部５Ａと導電部３Ａの接続部の一部には、第１被覆部３Ｂが残る場合もある。この場合、芯部５Ａの一部は、第１被覆部３Ｂを介して導電部３Ａと電気的に接続する。なお、本図に示す例では、芯部５Ａと導電部３Ａの接続部の中央部に第１被覆部３Bが位置しており、この第１被覆部３Ｂの周囲に金属間化合物５Ｃが位置している。   FIG. 5 is a view for explaining a connection portion between the lead wiring 18 and the bonding wire 23 in FIG. 4. The core portion 5 </ b> A of the bonding wire 23 penetrates the first covering portion 3 </ b> B of the lead wire 18 and is connected to the conductive portion 3 </ b> A of the lead wire 18. An intermetallic compound 5C is formed at a portion where the core portion 5A and the conductive portion 3A are directly connected. In addition, the 1st coating | coated part 3B may remain in a part of connection part of 5 A of core parts, and the electroconductive part 3A. In this case, a part of the core part 5A is electrically connected to the conductive part 3A via the first covering part 3B. In the example shown in this figure, the first covering portion 3B is located at the center of the connecting portion between the core portion 5A and the conductive portion 3A, and the intermetallic compound 5C is located around the first covering portion 3B. ing.

ここで、ボンディングワイヤ２３の芯部５Ａが銅であり、引出配線１８の導電部３ＡがＡｌである場合、金属間化合物５Ｃは、ＡｌとＣｕの金属間化合物（例えばＡｌ２Ｃｕ）である。このため、物理的にもボンディングワイヤ２３と引出配線１８の接続は強固になり、またボンディングワイヤ２３と引出配線１８の接続抵抗も低く（例えば第１被覆部３ＢがＭｏの場合は０．５Ω）なる。Here, when the core part 5A of the bonding wire 23 is copper and the conductive part 3A of the lead-out wiring 18 is Al, the intermetallic compound 5C is an intermetallic compound of Al and Cu (for example, Al 2 Cu). For this reason, the connection between the bonding wire 23 and the lead wiring 18 is physically strong, and the connection resistance between the bonding wire 23 and the lead wiring 18 is low (for example, 0.5Ω when the first covering portion 3B is Mo). Become.

次に、有機ＥＬ装置１００の製造方法について説明する。まず、有機ＥＬ素子１０及び引出配線１８が形成された基板１を準備する。有機ＥＬ素子１０及び引出配線１８は、例えば以下のようにして形成されている。なお、以下に示す方法において、引出配線１８は、下部電極１１となる透明導電膜と、Ａｌなどの金属の積層膜となっている。   Next, a method for manufacturing the organic EL device 100 will be described. First, the substrate 1 on which the organic EL element 10 and the lead wiring 18 are formed is prepared. The organic EL element 10 and the lead wiring 18 are formed as follows, for example. In the method described below, the lead-out wiring 18 is a laminated film of a transparent conductive film that becomes the lower electrode 11 and a metal such as Al.

まず、基板１の上に、下部電極１１となる透明導電膜（例えばＩＴＯ，ＩＺＯ，ＩＧＺＯなどの材料で形成される膜）を成膜する。その後、この透明導電膜をフォトリソグラフィによって選択的に除去し、下部電極１１を形成する。このとき、引出配線１８の導電部３Ａとなる透明電極膜も形成される。また、下部電極１１に接続する引出配線１８の導電部３Ａは、下部電極１１と一体に形成され、上部電極１３に接続する引出配線１８の導電部３Ａは、下部電極１１とは分離して形成される。いずれの引出配線１８の導電部３Ａも、発光領域１０２の外側に形成される。   First, a transparent conductive film (for example, a film formed of a material such as ITO, IZO, or IGZO) to be the lower electrode 11 is formed on the substrate 1. Thereafter, the transparent conductive film is selectively removed by photolithography to form the lower electrode 11. At this time, a transparent electrode film to be the conductive portion 3A of the lead wiring 18 is also formed. The conductive portion 3A of the lead wire 18 connected to the lower electrode 11 is formed integrally with the lower electrode 11, and the conductive portion 3A of the lead wire 18 connected to the upper electrode 13 is formed separately from the lower electrode 11. Is done. The conductive portion 3 </ b> A of any lead wiring 18 is formed outside the light emitting region 102.

ただし、導電部３Ａが透明電極と金属層との積層構造となる場合がある。この場合、上部電極１３に接続する引出配線１８の導電部３Ａは、透明電極層を有していなくても良い。また、下部電極１１に接続する引出配線１８の導電部３Ａは、金属層を有していなくても良い。   However, the conductive part 3A may have a laminated structure of a transparent electrode and a metal layer. In this case, the conductive portion 3A of the lead wiring 18 connected to the upper electrode 13 does not have to have a transparent electrode layer. Further, the conductive portion 3A of the lead wiring 18 connected to the lower electrode 11 may not have a metal layer.

その後、基板１の上に、引出配線１８の導電部３Ａの一部又は全体を覆う第１の保護部を成膜する。   Thereafter, a first protection part is formed on the substrate 1 so as to cover a part or the whole of the conductive part 3A of the lead wiring 18.

次いで、第１の保護部の上に、導電部３Ａとなる第１の金属膜（例えばアルミニウム膜）、及び第１被覆部３Ｂとなる第２の金属膜をこの順に成膜し、第１の保護部とフォトリソグラフィによってこれら金属膜をパターニングする。これにより、引出配線１８の上層が形成される。なお第１被覆部３Ｂは、複数の金属層を積層した構造を有していても良い。   Next, a first metal film (for example, an aluminum film) to be the conductive portion 3A and a second metal film to be the first covering portion 3B are formed in this order on the first protective portion, and the first These metal films are patterned by a protective part and photolithography. Thereby, the upper layer of the lead wiring 18 is formed. The first covering portion 3B may have a structure in which a plurality of metal layers are stacked.

次いで、隔壁１５となる絶縁層を形成し、この絶縁層をエッチング（例えばドライエッチング又はウェットエッチング）など利用し、選択的に除去する。これにより、隔壁１５が形成される。隔壁１５が感光性の絶縁膜で形成される場合、露光及び現像時の条件を調節することにより、隔壁１５の断面形状を逆台形にすることができる。   Next, an insulating layer to be the partition wall 15 is formed, and this insulating layer is selectively removed by using etching (for example, dry etching or wet etching). Thereby, the partition 15 is formed. When the partition wall 15 is formed of a photosensitive insulating film, the cross-sectional shape of the partition wall 15 can be changed to an inverted trapezoid by adjusting the conditions during exposure and development.

次いで、有機層１２を、蒸着法又は塗布法を用いて形成する。有機層１２は、例えば、正孔輸送層、発光層、及び電子輸送層を積層したものである。なお、以下の説明において、一部の有機層とは、例えば、正孔輸送層、発光層、電子輸送層、後述する正孔注入層、又は電子注入層を指す。これらの層のうち少なくとも正孔注入層は、例えばスプレー塗布、ディスペンサー塗布、インクジェット、又は印刷などの塗布法を用いて形成される。塗布法で用いられる塗布材料としては、高分子材料、高分子材料中に低分子材料を含んだものなどが適している。塗布材料としては、例えば、ポリアルキルチオフェン誘導体、ポリアニリン誘導体、トリフェニルアミン、無機化合物のゾルゲル膜、ルイス酸を含む有機化合物膜、導電性高分子などを利用することができる。なお、有機層１４０のうち残りの層（例えば電子輸送層）は、蒸着法により形成される。ただしこれらの層も、上記した塗布法のいずれかを用いて形成されても良い。   Next, the organic layer 12 is formed using a vapor deposition method or a coating method. The organic layer 12 is formed by stacking, for example, a hole transport layer, a light emitting layer, and an electron transport layer. In the following description, a part of the organic layer refers to, for example, a hole transport layer, a light emitting layer, an electron transport layer, a hole injection layer described later, or an electron injection layer. Among these layers, at least the hole injection layer is formed using a coating method such as spray coating, dispenser coating, inkjet, or printing. As a coating material used in the coating method, a polymer material, a polymer material containing a low-molecular material, or the like is suitable. As the coating material, for example, a polyalkylthiophene derivative, a polyaniline derivative, triphenylamine, a sol-gel film of an inorganic compound, an organic compound film containing a Lewis acid, a conductive polymer, or the like can be used. The remaining layers (for example, electron transport layers) of the organic layer 140 are formed by a vapor deposition method. However, these layers may also be formed using any of the above-described coating methods.

次いで、上部電極１３を、例えば蒸着法、スパッタリング法、又は塗布法を用いて形成する。   Next, the upper electrode 13 is formed using, for example, a vapor deposition method, a sputtering method, or a coating method.

上記した方法によって形成される場合、下部電極１１に接続する引出配線１８は、例えば、導電部３ＡであるＩＴＯ（約１．５５μｍ）の上に、第１被覆部３ＢとしてのＮｉとＭｏの合金（約０．５μｍ）を形成した構造を有している。   When formed by the above-described method, the lead-out wiring 18 connected to the lower electrode 11 is made of, for example, an alloy of Ni and Mo as the first covering portion 3B on the conductive portion 3A ITO (about 1.55 μm). (About 0.5 μm).

また、上部電極１３に接続する引出配線１８は、例えば、導電部３ＡとしてのＡｌ膜（約２．３μｍ）の上に、第１被覆部３ＢとしてのＭｏとＮｂの合金膜及びＮｉとＭｏの合金膜の積層膜を形成した構造を有している。また、この引出配線１８は、導電部３Ａとして、透明導電膜：ＩＴＯ（約１．５５μｍ）膜、ＭｏとＮｂの合金膜（約０．５μｍ）、及びＡｌとＮｂの合金（約３．０μｍ）膜の積層膜を形成し、この上に、第１被覆部３ＢとしてＮｉとＮｂの合金膜を積層したものとすることもできる。   The lead wiring 18 connected to the upper electrode 13 is formed of, for example, an alloy film of Mo and Nb as the first covering portion 3B and Ni and Mo on the Al film (about 2.3 μm) as the conductive portion 3A. It has a structure in which a laminated film of alloy films is formed. In addition, the lead-out wiring 18 has, as the conductive portion 3A, a transparent conductive film: ITO (about 1.55 μm) film, an alloy film of Mo and Nb (about 0.5 μm), and an alloy of Al and Nb (about 3.0 μm). ) A laminated film of films may be formed, and an alloy film of Ni and Nb may be laminated thereon as the first covering portion 3B.

次いで、基板１の上に、駆動用ＩＣ２１が搭載された回路基板２０Ａを固定し、その後、ボンディングワイヤ２３を用いて引出配線１８と配線２２とを接続する。   Next, the circuit board 20 </ b> A on which the driving IC 21 is mounted is fixed on the substrate 1, and then the lead-out wiring 18 and the wiring 22 are connected using the bonding wires 23.

図６は、有機ＥＬ装置１００を基板１の光射出面側から見た平面図である。本実施例において、回路基板２０Ａと引出配線１８とを接続する接続部材は、ボンディングワイヤ２３である。従って、有機ＥＬ装置１００のうち引出配線１８を配線２２に接続するために必要な領域（額縁領域１０４）を狭くして、発光領域１０２を広くすることができる。その結果、有機ＥＬ装置１００を収容する筐体を小さくできるので、電子機器の小型化・薄型化が可能になる。   FIG. 6 is a plan view of the organic EL device 100 as viewed from the light emitting surface side of the substrate 1. In the present embodiment, the connecting member that connects the circuit board 20 </ b> A and the lead wiring 18 is the bonding wire 23. Therefore, a region (frame region 104) necessary for connecting the lead wiring 18 to the wiring 22 in the organic EL device 100 can be narrowed, and the light emitting region 102 can be widened. As a result, the housing for housing the organic EL device 100 can be made small, and the electronic device can be made smaller and thinner.

図７は、比較例に係る有機ＥＬ装置１００の構成を示す断面図であり、実施例における図４に対応している。この比較例において、駆動用ＩＣ２１はフレキシブル基板２０の上に搭載されている。そしてフレキシブル基板２０の一端は、導電性接着剤（ＡＣＦ）１９を介して引出配線１８に接続されている。このような構造では、フレキシブル基板２０を１８０°曲げているため、引出配線１８とフレキシブル基板２０を接続するための領域を広くする必要がある。このため、図４に示した例と比較して、額縁領域１０４を広くして発光領域１０２を狭くする必要が出てくる。例えば図４に示した例では、額縁領域１０４の幅は３．５〜４ｍｍであるのに対し、図７に示す例では、額縁領域１０４の幅は８．５〜１０ｍｍと、２倍以上になってしまう。   FIG. 7 is a cross-sectional view illustrating a configuration of the organic EL device 100 according to the comparative example, and corresponds to FIG. 4 in the example. In this comparative example, the driving IC 21 is mounted on the flexible substrate 20. One end of the flexible substrate 20 is connected to the lead wiring 18 via a conductive adhesive (ACF) 19. In such a structure, since the flexible substrate 20 is bent by 180 °, it is necessary to widen an area for connecting the lead wiring 18 and the flexible substrate 20. For this reason, it is necessary to make the frame region 104 wider and the light emitting region 102 narrower than in the example shown in FIG. For example, in the example shown in FIG. 4, the width of the frame region 104 is 3.5 to 4 mm, whereas in the example shown in FIG. 7, the width of the frame region 104 is 8.5 to 10 mm, which is more than doubled. turn into.

また、フレキシブル基板２０を１８０°曲げる必要があるため、フレキシブル基板２０を曲げるために必要な幅（図中左右方向）及び厚さ（図中上下方向）をある程度確保する必要がある。このため、有機ＥＬ装置１００を収容するために必要なスペースが大きなってしまう。なお、有機ＥＬ装置１００の厚さは、基板１の厚さ方向における、駆動用ＩＣ２１の幅、フレキシブル基板２０の曲げ幅、基板１の厚さの合計値である。   Moreover, since it is necessary to bend the flexible substrate 20 by 180 °, it is necessary to secure a certain width (left and right direction in the drawing) and thickness (up and down direction in the drawing) necessary for bending the flexible substrate 20. For this reason, a space required for accommodating the organic EL device 100 is increased. The thickness of the organic EL device 100 is the total value of the width of the driving IC 21, the bending width of the flexible substrate 20, and the thickness of the substrate 1 in the thickness direction of the substrate 1.

図８は、引出配線１８とフレキシブル基板２０の接続部を説明するための図である。本図に示すように導電性接着剤１９は引出配線１８の第１被覆部３Ｂを突き破っていない。このため、導電性接着剤１９の導電性粒子は、第１被覆部３Ｂを介して導電部３Ａに接続する。そして、導電性接着剤１９の導電性粒子が樹脂粒子にＮｉメッキを施したものであり、第１被覆部３ＢがＭｏであり、導電部３ＡがＡｌの場合、導電部３Ａと導電性接着剤１９の接続抵抗は、１．５オームとなり、上記した実施例に対して大きくなる。   FIG. 8 is a view for explaining a connecting portion between the lead-out wiring 18 and the flexible substrate 20. As shown in the figure, the conductive adhesive 19 does not penetrate the first covering portion 3B of the lead wiring 18. For this reason, the conductive particles of the conductive adhesive 19 are connected to the conductive portion 3A via the first covering portion 3B. When the conductive particles of the conductive adhesive 19 are obtained by applying Ni plating to resin particles, the first covering portion 3B is Mo, and the conductive portion 3A is Al, the conductive portion 3A and the conductive adhesive The connection resistance of 19 is 1.5 ohms, which is larger than the above-described embodiment.

また、本実施例では、封止部材１６の一面に駆動用ＩＣ２１を配置できるので、有機ＥＬ装置１００の平面形状は、駆動ＩＣ２１の形状や存在による制約を受けない。このため、有機ＥＬ装置１００の平面形状の自由度が向上する。また、図７，８に示した例では、フレキシブル基板２０に接続するためのコネクターの形状によって、有機ＥＬ装置１００の平面形状に制約が生じるが、本実施例ではこのような制約が生じない。従って、有機ＥＬ装置１００の平面形状を、円形、ハート形、星形などといった形状にすることができる。   In the present embodiment, the driving IC 21 can be disposed on one surface of the sealing member 16, so that the planar shape of the organic EL device 100 is not restricted by the shape or presence of the driving IC 21. For this reason, the freedom degree of the planar shape of the organic EL device 100 is improved. In the example shown in FIGS. 7 and 8, the shape of the connector for connecting to the flexible substrate 20 is limited in the planar shape of the organic EL device 100. However, in this embodiment, such a limitation does not occur. Therefore, the planar shape of the organic EL device 100 can be a circular shape, a heart shape, a star shape, or the like.

なお、配線２２とボンディングワイヤ２３の接続部についても、引出配線１８とボンディングワイヤ２３の接続部と同様の構造となっていても良い。   Note that the connecting portion between the wiring 22 and the bonding wire 23 may have the same structure as the connecting portion between the lead-out wiring 18 and the bonding wire 23.

（実施例２）
図９は、実施例２に係る液晶装置２００の構成を示す断面図である。液晶装置２００は、基板１、基板３２、封止材３３を備えており、基板１と基板３２との間に液晶層３０を挟持して、その周囲を封止材３３で封止している。すなわち液晶層３０は、基板１、基板３２、及び封止材３３で封止された空間内に位置している。(Example 2)
FIG. 9 is a cross-sectional view illustrating the configuration of the liquid crystal device 200 according to the second embodiment. The liquid crystal device 200 includes a substrate 1, a substrate 32, and a sealing material 33. The liquid crystal layer 30 is sandwiched between the substrate 1 and the substrate 32 and the periphery thereof is sealed with the sealing material 33. . That is, the liquid crystal layer 30 is located in a space sealed with the substrate 1, the substrate 32, and the sealing material 33.

基板１は、ガラスや樹脂などの透光性を有する材料によって形成されている。基板１のうち液晶層３０側の面には、透明電極（図示せず）が形成されている。また、液晶装置２００は、例えば基板３２と液晶層３０の間に、カラーフィルタや液晶配向膜などを備えている。   The substrate 1 is made of a light-transmitting material such as glass or resin. A transparent electrode (not shown) is formed on the surface of the substrate 1 on the liquid crystal layer 30 side. The liquid crystal device 200 includes a color filter, a liquid crystal alignment film, and the like between the substrate 32 and the liquid crystal layer 30, for example.

基板３２は、基板１と同様に、ガラスや樹脂などの透光性を有する材料によって形成されている。また、基板３２のうち液晶層３０側の面には、透明電極（図示せず）が形成されている。基板３２には、さらに、表示画素を形成する画素電極と、画像信号に応じて画素毎に液晶を駆動する駆動素子（例えばＴＦＴ素子）が形成されている。   Similar to the substrate 1, the substrate 32 is formed of a light-transmitting material such as glass or resin. A transparent electrode (not shown) is formed on the surface of the substrate 32 on the liquid crystal layer 30 side. The substrate 32 further includes pixel electrodes that form display pixels and drive elements (for example, TFT elements) that drive liquid crystals for each pixel in accordance with image signals.

基板１における液晶層３０の外側には引出配線３５が引き出されている。引出配線３５の一端は、光学素子である液晶素子（図示せず、液晶層３０と透明電極、画素電極で形成されている）に接続されており、引出配線３５の他端は基板３２の外側に位置している。   On the outside of the liquid crystal layer 30 on the substrate 1, lead wires 35 are drawn. One end of the lead wiring 35 is connected to a liquid crystal element (not shown, formed of a liquid crystal layer 30, a transparent electrode, and a pixel electrode), and the other end of the lead wiring 35 is outside the substrate 32. Is located.

基板３２のうち液晶層３０とは逆の側（背面）には、回路基板３０Ａが配置されている。回路基板３０Ａには、液晶素子を駆動する駆動用ＩＣ３６（制御部）が実装されている。駆動用ＩＣ３６は、ボンディングワイヤ４２を介して回路基板３０Ａの配線３７に接続している。そして、配線３７は、ボンディングワイヤ４０を介して引出配線３５と接続している。図示しないが、ボンディングワイヤ４０，４２はモールド樹脂で封止されている。   A circuit board 30 </ b> A is arranged on the side (back side) of the substrate 32 opposite to the liquid crystal layer 30. A driving IC 36 (control unit) for driving the liquid crystal element is mounted on the circuit board 30A. The driving IC 36 is connected to the wiring 37 of the circuit board 30 </ b> A via the bonding wire 42. The wiring 37 is connected to the lead wiring 35 through the bonding wire 40. Although not shown, the bonding wires 40 and 42 are sealed with mold resin.

なお、本実施例において、引出配線３５が実施例１における引出配線１８に対応しており、配線３７が実施例１における配線２２に対応している。そして、ボンディングワイヤ４０が実施形態におけるボンディングワイヤ２３に対応している。   In this embodiment, the lead-out wiring 35 corresponds to the lead-out wiring 18 in the first embodiment, and the wiring 37 corresponds to the wiring 22 in the first embodiment. The bonding wire 40 corresponds to the bonding wire 23 in the embodiment.

図９に示した例によると、ボンディングワイヤ４０による接続構造を採用しているため、実施例１と同様に、接続領域の狭隈化が可能になり、表示領域（アクディブエリア）の外側の額縁領域を小さくすることができる。   In the example shown in FIG. 9, since the connection structure using the bonding wires 40 is adopted, the connection area can be narrowed as in the first embodiment, and the frame outside the display area (active area) can be obtained. The area can be reduced.

一般的な液晶装置では、図７，８に示した有機ＥＬ装置と同様に、引出配線３５を透明電極（例えばＩＴＯ等）で形成し、この引出配線３５と配線３７を、フレキシブル基板を用いて接続している。また、フレキシブル基板と引出配線３５は、ＡＣＦを介して接続している。この場合、図７，８に示した例と同様に、表示領域の外側の額縁領域を狭くすることは難しい。   In a general liquid crystal device, similarly to the organic EL device shown in FIGS. 7 and 8, the lead wire 35 is formed of a transparent electrode (for example, ITO), and the lead wire 35 and the wire 37 are formed using a flexible substrate. Connected. Further, the flexible substrate and the lead-out wiring 35 are connected via an ACF. In this case, as in the example shown in FIGS. 7 and 8, it is difficult to narrow the frame area outside the display area.

これに対して本実施例によれば、フレキシブル基板の代わりに、ボンディングワイヤ４０を用いているため、液晶装置２００を収容する筐体の収納スペースを小さくでき、その結果、電子機器の小型化・薄型化が可能になる。また、ボンディングワイヤ４０と引出配線３５の接続部の少なくとも一部において、ボンディングワイヤの芯部と引出配線３５の導電部は、第２被覆部及び第１被覆部のいずれも介さずに接続している。従って、これらの間の電気的な接続を確実に行うことができる。   On the other hand, according to the present embodiment, since the bonding wire 40 is used instead of the flexible substrate, the storage space of the housing for storing the liquid crystal device 200 can be reduced. Thinning is possible. Further, in at least a part of the connection portion between the bonding wire 40 and the lead-out wiring 35, the core portion of the bonding wire and the conductive portion of the lead-out wiring 35 are connected without passing through either the second covering portion or the first covering portion. Yes. Therefore, the electrical connection between them can be reliably performed.

また、基板３２の一面に駆動用ＩＣ３６を配置できるので、液晶装置２００の平面形状は、駆動ＩＣ３６の形状による制約を受けない。このため、液晶装置２００の平面形状の自由度が向上する。また、液晶装置２００の平面形状には、フレキシブル基板に接続するためのコネクターの形状に起因した制約も生じない。従って、液晶装置２００の平面形状を、円形、ハート形、星形などといった形状にすることができる。   Further, since the driving IC 36 can be disposed on one surface of the substrate 32, the planar shape of the liquid crystal device 200 is not restricted by the shape of the driving IC 36. For this reason, the freedom degree of the planar shape of the liquid crystal device 200 is improved. Further, the planar shape of the liquid crystal device 200 is not restricted due to the shape of the connector for connecting to the flexible substrate. Therefore, the planar shape of the liquid crystal device 200 can be a circular shape, a heart shape, a star shape, or the like.

また、実施形態又は実施例に係る導体の接続構造は、前述したような発光装置や表示装置への適用に限定されるものではなく、半導体装置又はタッチパネルを有するスイッチなどを含む各種の電子機器に適用可能である。また、ここでの電子機器とは、それ自体を単体で設置又は携帯できるものに限らず、例えば、自動車の車室内や家屋内に装備される電子的な機器を含むものとする。   Further, the conductor connection structure according to the embodiment or the example is not limited to the application to the light emitting device and the display device as described above, but to various electronic apparatuses including a semiconductor device or a switch having a touch panel. Applicable. In addition, the electronic device here is not limited to an electronic device that can be installed or carried by itself, but includes, for example, an electronic device that is installed in the interior of a car or in a house.

以上、実施形態及び実施例について、図面を参照して詳述してきたが、具体的な構成はこれらの実施の形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計の変更等があっても本発明に含まれる。上述の各図で示した実施の形態は、その目的及び構成等に特に矛盾や問題がない限り、互いの記載内容を組み合わせることが可能である。また、各図の記載内容はそれぞれ独立した実施形態になり得るものであり、本発明の実施形態は各図を組み合わせた一つの実施形態に限定されるものではない。   As described above, the embodiments and examples have been described in detail with reference to the drawings. However, the specific configuration is not limited to these embodiments, and the design can be changed without departing from the gist of the present invention. Is included in the present invention. The embodiments described in the above drawings can be combined with each other as long as there is no particular contradiction or problem in the purpose, configuration, or the like. Moreover, the description content of each figure can become independent embodiment, respectively, and embodiment of this invention is not limited to one embodiment which combined each figure.

Claims (2)

下部電極と、上部電極と、前記下部電極と前記上部電極の間に位置する有機層と、を備えた有機ＥＬ素子と、
導電部の上にＭｏ、Ｎｉ、Ｎｂ、又はＰｄの単体または合金により形成されている第１被覆部を積層し、前記上部電極又は前記下部電極と電気的に接続している配線と、
銅を主成分とする芯部、及び前記芯部を覆うＰｄ又はＰｔにより形成されている第２被覆部と、を備え、前記配線に前記第１被覆部側から接続する接続部材と、
を備え、
前記配線と前記接続部材との接続部の少なくとも一部には、前記導電部を構成する金属と前記銅の金属間化合物が形成されている有機ＥＬ装置。 An organic EL device comprising a lower electrode, an upper electrode, and an organic layer positioned between the lower electrode and the upper electrode;
A first covering portion formed of Mo, Ni, Nb, or Pd alone or an alloy is laminated on the conductive portion, and a wiring electrically connected to the upper electrode or the lower electrode;
A core part mainly composed of copper, and a second covering part formed of Pd or Pt covering the core part, and a connection member connected to the wiring from the first covering part side;
With
The wiring and at least a portion of the connecting portion between the connecting member, the organic EL device intermetallic compounds of the copper and the metal constituting the conductive portion is formed. 請求項１に記載の有機ＥＬ装置において、
前記接続部のうち前記金属間化合物が形成されていない部分の少なくとも一部は、前記芯部と前記第１被覆部との接触部分を有する有機ＥＬ装置。 In the organic EL device according to claim 1,
In the organic EL device, at least a part of the connection portion where the intermetallic compound is not formed has a contact portion between the core portion and the first covering portion.
JP2013556702A 2013-07-03 2013-07-03 Organic EL device Expired - Fee Related JP5591411B1 (en)

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