JP2005079130A - 薄膜配線層 - Google Patents
薄膜配線層 Download PDFInfo
- Publication number
- JP2005079130A JP2005079130A JP2003304255A JP2003304255A JP2005079130A JP 2005079130 A JP2005079130 A JP 2005079130A JP 2003304255 A JP2003304255 A JP 2003304255A JP 2003304255 A JP2003304255 A JP 2003304255A JP 2005079130 A JP2005079130 A JP 2005079130A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- thin film
- layer
- film
- film wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims description 31
- 239000010410 layer Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000654 additive Substances 0.000 claims description 19
- 230000000996 additive effect Effects 0.000 claims description 19
- 229910052758 niobium Inorganic materials 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011247 coating layer Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 44
- 229910000990 Ni alloy Inorganic materials 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 239000013077 target material Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002438 flame photometric detection Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910001182 Mo alloy Inorganic materials 0.000 description 5
- 241000519995 Stachys sylvatica Species 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000002845 discoloration Methods 0.000 description 4
- 230000005389 magnetism Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- 241000221535 Pucciniales Species 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003304255A JP2005079130A (ja) | 2003-08-28 | 2003-08-28 | 薄膜配線層 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003304255A JP2005079130A (ja) | 2003-08-28 | 2003-08-28 | 薄膜配線層 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005079130A true JP2005079130A (ja) | 2005-03-24 |
| JP2005079130A5 JP2005079130A5 (enrdf_load_stackoverflow) | 2006-08-24 |
Family
ID=34407993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003304255A Withdrawn JP2005079130A (ja) | 2003-08-28 | 2003-08-28 | 薄膜配線層 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005079130A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310814A (ja) * | 2005-03-29 | 2006-11-09 | Hitachi Metals Ltd | 薄膜配線層 |
| KR100754339B1 (ko) | 2005-07-29 | 2007-08-31 | 쿄세라 코포레이션 | 유기 ｅｌ 소자 및 그 제조방법 |
| KR101358529B1 (ko) | 2011-08-19 | 2014-02-05 | 히타치 긴조쿠 가부시키가이샤 | 전자부품용 적층 배선막 및 피복층 형성용 스퍼터링 타겟재 |
| JP5591411B1 (ja) * | 2013-07-03 | 2014-09-17 | パイオニア株式会社 | 有機ｅｌ装置 |
| CN104064549A (zh) * | 2013-03-22 | 2014-09-24 | 日立金属株式会社 | 电子部件用层叠布线膜和覆盖层形成用溅射靶材 |
| CN104425416A (zh) * | 2013-09-10 | 2015-03-18 | 日立金属株式会社 | 层叠布线膜和其制造方法以及Ni合金溅射靶材 |
| JP2016157925A (ja) * | 2015-02-25 | 2016-09-01 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
-
2003
- 2003-08-28 JP JP2003304255A patent/JP2005079130A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310814A (ja) * | 2005-03-29 | 2006-11-09 | Hitachi Metals Ltd | 薄膜配線層 |
| KR100754339B1 (ko) | 2005-07-29 | 2007-08-31 | 쿄세라 코포레이션 | 유기 ｅｌ 소자 및 그 제조방법 |
| KR101358529B1 (ko) | 2011-08-19 | 2014-02-05 | 히타치 긴조쿠 가부시키가이샤 | 전자부품용 적층 배선막 및 피복층 형성용 스퍼터링 타겟재 |
| CN104064549A (zh) * | 2013-03-22 | 2014-09-24 | 日立金属株式会社 | 电子部件用层叠布线膜和覆盖层形成用溅射靶材 |
| KR101553472B1 (ko) | 2013-03-22 | 2015-09-15 | 히타치 긴조쿠 가부시키가이샤 | 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재 |
| CN104064549B (zh) * | 2013-03-22 | 2016-08-31 | 日立金属株式会社 | 电子部件用层叠布线膜和覆盖层形成用溅射靶材 |
| JP5591411B1 (ja) * | 2013-07-03 | 2014-09-17 | パイオニア株式会社 | 有機ｅｌ装置 |
| CN104425416A (zh) * | 2013-09-10 | 2015-03-18 | 日立金属株式会社 | 层叠布线膜和其制造方法以及Ni合金溅射靶材 |
| JP2016157925A (ja) * | 2015-02-25 | 2016-09-01 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060711 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060711 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20081024 |