JP2005050827A - Process for manufacturing illumination light source and illumination light source - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To facilitate the replacement of a lens section in a constitution that the lens section is arranged in front of a semiconductor light emitting device. <P>SOLUTION: A illumination light source includes a substrate 102 having a plurality of hollows, a plurality of semiconductor light emitting devices 200 disposed in the hollows of substrate 102 respectively and resins 309b and 309c for forming a plurality of individual fluorescent lenses arranged near opening's surfaces of the hollows in front of semiconductor light emitting devices 200 respectively. The individual fluorescent lens is constituted of a resin 309c forming a convex lens, and a resin 309b forming a transparent fluorescent layer arranged near opening's surfaces of the hollows, wherein the fluorescent layer is formed by supporting dispersed fluorescent material and laminating the fluorescent material on a surface in the rear of the convex lens. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing an illumination light source using a semiconductor light emitting element and an illumination light source.

Conventionally, various light sources composed of semiconductor light emitting elements have been proposed. For example, in Japanese Patent Application Laid-Open No. 5-152609, a light emitting element placed on a stem is represented by a general formula Ga _X Al _1-X N (however, 0 ≦ X ≦ 1), and a fluorescent dye or fluorescent pigment that emits fluorescence when excited by light emission of the gallium nitride compound semiconductor is added to the resin mold. There is disclosed a light emitting diode that can improve the visibility and improve the luminance of an LED having a light emitting element made of a gallium nitride compound semiconductor material whose emission peak is around 430 nm and around 370 nm.

  Japanese Patent Application Laid-Open No. 7-99345 discloses a light emitting device in which the light emitting chip is mounted on the bottom of the cup that reflects the light emitted from the light emitting chip to the light emission observation surface side. The first resin is sealed with a resin made of a second resin surrounding the first resin, and the first resin has a fluorescent substance that converts the emission wavelength of the light-emitting chip to another wavelength, or the emission wavelength of the light-emitting chip. It contains a filter material that absorbs part of the light, improves the concentration of the converted light emission to increase the brightness of the LED, and when fluorescent pigments are used, even if LEDs with different wavelengths are placed close together, color mixing will not occur. No light emitting diode is disclosed.

Further, Japanese Patent No. 2927279 discloses an LED chip in which a light emitting layer disposed in a cup of a mount lead is a gallium nitride compound semiconductor, and an inner connected electrically using an LED chip and a conductive wire. A coating member in which a transparent resin containing a lead and a phosphor that emits light emitted by light emitted from the LED chip is filled in the cup, a coating member, an LED chip, a conductive wire, and a mount lead and an inner lead and a molding member covering the tip, LED chips, light emitting spectrum emits monochromatic peak wavelength of 530nm from 400 nm, the phosphor _{(RE 1-x Sm x)} 3 (Al y Ga 1-y) ₅ O _12: a Ce (However, 0 ≦ x ≦ 1,0 ≦ y ≦ 1, RE is, Y, is selected from Gd Is at least one), and light from the light and phosphor from the LED chip white have been described capable of emitting light emitting diode by passing through the mold member.

  In the above document, there is a description that a light emitting diode in which the light emission color of an LED chip is color-converted with a phosphor can emit other light emission colors such as a white color using one type of LED chip. Specifically, as a light emitting diode whose wavelength is converted from the light emitted from the LED chip, a white light is emitted by a mixture of light emitted from a blue light emitting diode and light emitted from a phosphor that absorbs the light emitted and emits yellow light. It is stated that it is possible. In other words, white light emission is obtained by a color mixture of yellow light emission from the phosphor and blue light emission from the light emitting diode that is not absorbed by the phosphor.

  Here, the specific structure of the light emitting diode described in Japanese Patent No. 2927279 will be described. As shown in FIG. 15, the light emitting diode having a bullet-shaped resin portion is mounted on a mount lead 1 as a lead frame. The LED chip 2 is mounted in the cup, and both electrodes of the LED chip 2 are connected to the mount lead 1 and the inner lead 4 by the electric wire 3 by wire bonding, respectively, in the cup (stem) of the mount lead 1 The coating portion 5 is provided on the LED chip 2 and the LED chip 2 side is covered with a bullet-shaped mold member 6.

  Further, as shown in FIG. 16, in the chip-type light emitting diode, an LED chip 13 is mounted on a housing 12 having an electrode 11, and each electrode of the LED chip 13 is connected to the housing 12 by an electric wire 14 by wire bonding. The mold member 15 is provided in the housing 12 so as to be connected to each electrode 11.

  In addition, as shown in FIG. 17, the planar light source uses a light guide plate 21 or the like for converting a linear light source into a planar light source, and the LED chip 23 is mounted on a U-shaped metal substrate 22. It has a structure in which a coating portion 24 containing photoluminescence is provided.

Furthermore, as shown in FIG. 18, the LED display is composed of a casing 31, a light emitting diode 32, a filler 33, and the like. The unit currently used for illumination is similarly configured by mounting a plurality of LEDs on a printed wiring board.
JP-A-5-152609 JP-A-7-99345 Japanese Patent No. 2927279

  However, in the light emitting diode shown in FIGS. 15 and 16, since the LED chip is mounted on the mount lead or the housing, when the light emitting diode is mounted on the substrate, it must be mounted twice, which increases the cost. Challenges arise.

  In addition, in order to arrange | position a fluorescent substance (substance) in a cup, it is necessary to make fluorescent substance contain in resin. However, since the resin containing the phosphor deteriorates when exposed to high-energy blue light and a high temperature in the vicinity of the device at the same time, the lifetime as a light source is shortened.

  Further, when a coating portion containing a photoluminescent phosphor that converts the light emission of the LED chip is provided in the cup of the mount lead, it becomes difficult to control the amount of the phosphor, and color variation tends to occur. For example, when the desired emission color is white and the amount of phosphor varies, the yellow light emitted from the phosphor varies, and the resulting emission color changes to a high-temperature pale color tone, Conversely, it changes to a yellowish hue at low temperature. Such color variation is easily determined as color unevenness, particularly when a plurality of light sources are provided in a planar shape.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an illumination light source manufacturing method and an illumination light source that facilitate replacement of the lens portion in a configuration in which a lens portion is provided in front of a semiconductor light emitting element. To do.

  An invention according to claim 1 for solving the above-described problem is an illumination light source including a substrate, a semiconductor light emitting element mounted on the substrate, and a lens body, and having a phosphor layer in front of the semiconductor light emitting element. In the manufacturing method, a fluorescent lens body in which the lens body and the phosphor layer are integrated is prepared, and the fluorescent lens body is disposed in front of the semiconductor light emitting element. In this method, since the lens body and the phosphor layer are integrated, the lens body can be easily exchanged together with the phosphor layer.

  An illumination light source according to a second aspect of the present invention includes a substrate, a plurality of semiconductor light emitting elements mounted on the substrate, and a plurality of individual fluorescent lens bodies individually disposed in front of the plurality of semiconductor light emitting elements. It is characterized by providing. In this configuration, the individual fluorescent lens body can be easily replaced.

  According to a third aspect of the present invention, in the illumination light source according to the second aspect, the individual fluorescent lens body includes a lens body, and a translucent phosphor layer that holds the phosphor in a dispersed manner and is laminated behind the lens body. It is comprised by these. In this configuration, since the phosphor layer is laminated on the lens body, the lens body can be easily exchanged together with the phosphor layer.

  According to a fourth aspect of the present invention, in the illumination light source according to the third aspect, the lens body is made of glass, and the phosphor layer is laminated on the glass lens body by firing. In this configuration, the lens body can be easily exchanged together with the phosphor layer.

  According to a fifth aspect of the present invention, in the illumination light source according to the fourth aspect of the present invention, the rear side of the individual fluorescent lens body is a resin-unsealed hollow. In this structure, since it becomes resin-free, it can aim at an improvement in a weather resistance thru | or lifetime.

  According to the present invention, the cost can be reduced, and the lens portion can be easily replaced in the configuration in which the lens portion is provided in front of the semiconductor light emitting element.

  FIG. 1 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the first embodiment of the present invention. The first embodiment will be described below with reference to this figure. However, FIG. 1 shows a part of the sectional structure of the illumination light source.

  The illumination light source of FIG. 1 is formed by arranging a plurality of light sources in, for example, a linear shape or a matrix shape, and includes a substrate 100, a plurality of semiconductor light emitting elements 200 mounted on the substrate 100, and a region of each semiconductor light emitting element 200. It is comprised with the resin 300 provided.

  The substrate 100 is a printed wiring board on which a desired circuit is provided, and a plurality of inverted frustoconical recesses Cav having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 3 mm (only one is shown in FIG. 1) are formed on the upper surface side. The insulating layer 100b is laminated on the upper surface of the metal base 100a, and the wiring pattern conductor 100c is laminated on a necessary portion of the upper surface of the insulating layer 100b. However, the wiring pattern conductor 100c in FIG. 1 is provided with a bonding pad. Note that the plurality of depressions Cav may be formed in advance on the metal base 100a before the substrate 100 is manufactured, or may be formed later by press molding or the like. In addition, the metal base 100a is formed of aluminum, copper, or the like with good thermal conductivity.

  The semiconductor light emitting element 200 is a blue LED element made of a gallium nitride compound semiconductor, and P and N electrodes respectively connected to the corresponding wiring pattern conductor 100c by the lead wire W by wire bonding (in the figure, the same surface). It is formed in a chip shape on the upper surface.

  The resin 300 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Is filled.

  Next, a manufacturing procedure of the illumination light source having the above configuration will be described. First, the substrate 100 is prepared, and the semiconductor light emitting element 200 is bonded and fixed (mounted) with, for example, a transparent resin at the center of the bottom surface in each recess Cav. At this time, it goes without saying that other elements are mounted if necessary. Subsequently, each electrode of the semiconductor light emitting element 200 is connected to the corresponding wiring pattern conductor 100c by the lead wire W by wire bonding. Thereafter, a translucent resin is filled in each recess Cav of the substrate 100 as the resin 300 while mixing the phosphors. At this time, as shown in FIG. 1, the resin 300 is formed in a convex lens shape that rises upward from the substrate 100.

  In the illumination light source configured as described above, when the semiconductor light emitting element 200 emits light, the yellow light obtained by absorbing the blue light by the phosphor and the blue light not absorbed by the phosphor. White light emission is obtained by the color mixture.

  As described above, according to the first embodiment, since the number of times of mounting is one, the cost can be reduced. In particular, as the number of semiconductor light emitting elements 200 provided on the substrate 100 increases, the cost reduction effect becomes even greater.

  Moreover, compared with the conventional system which provides a fluorescent substance in the cup which mounted the LED chip, a fluorescent substance containing area | region can be enlarged very much. In this case, since the concentration of the phosphor contained in the phosphor-containing region can be lowered, the time during which light stays in the phosphor-containing region due to multiple scattering between the phosphors is shortened, and the phosphor by photochemical reaction and this It becomes possible to suppress deterioration of resin to contain suitably.

  In the first embodiment, the semiconductor light emitting element is a lead wire formed by wire bonding and has a structure formed in a chip shape having P and N electrodes respectively connected to corresponding wiring pattern conductors on the same surface. However, the structure is not limited to this, and is formed in a chip shape having P and N electrodes connected to corresponding wiring pattern conductors on both surfaces facing in opposite directions by mounting bonding by die bonding and lead wires by wire bonding, respectively. But you can. Or the structure formed in the chip | tip shape which has the P and N electrode respectively connected by the mounting bonding by die bonding to the corresponding wiring pattern conductor on both sides may be sufficient. It goes without saying that any of these structures can be mounted on a substrate, and the above effects can be achieved.

  FIG. 2 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the second embodiment of the present invention, and the second embodiment will be described below with reference to this figure. However, FIG. 2 shows a part of a sectional structure of the illumination light source.

  The illumination light source of FIG. 2 includes a plurality of semiconductor light emitting elements 200 and a resin 300 as in the first embodiment, and also includes a substrate 101 as a difference from the first embodiment.

  The substrate 101 includes a printed wiring board 100 similar to that of the first embodiment, and a mortar-shaped hole that is attached to the upper surface of the printed wiring board 100 with, for example, an adhesive and communicates with each recess Cav of the printed wiring board 100. The reflecting frame 100d is formed with a plurality of H1 holes. The reflection frame 100d is made of resin or metal, and the peripheral wall of each hole H1 has a mirror finish. Moreover, since each hole H1 of the reflective frame 100d communicates with the depression Cav, the minimum inner diameter is 3 mm, so the maximum inner diameter is larger (for example, 5 to 10 mm).

  As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained, and the reflective frame 100d having a plurality of mirror-finished holes H1 is integrally provided on the printed wiring board 100 to provide the substrate 101. Thus, the optical characteristics can be improved.

  FIG. 3 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the third embodiment of the present invention. The third embodiment will be described below with reference to this figure. However, FIG. 3 shows a part of the sectional structure of the illumination light source.

  The illumination light source of FIG. 3 includes a plurality of semiconductor light emitting elements 200 and a resin 300 as in the second embodiment, and also includes a substrate 102 as a difference from the second embodiment.

  This substrate 102 is constituted by a printed wiring board in which a reflecting frame 102d in which a plurality of holes H2 of a mortar type (minimum inner diameter of about 2 mm, maximum inner diameter of about 3 mm) forming a depression is formed is integrally attached to the upper surface. ing. The printed wiring board itself has a metal base 102a formed in a plate shape from aluminum, copper, or the like having good thermal conductivity, and an insulating layer 102b is laminated on the upper surface of the metal base 102a. A wiring pattern conductor 102c is laminated at a necessary position on the upper surface, and a desired circuit is provided. The peripheral wall of each hole H2 has a mirror finish. The semiconductor light emitting device 200 is mounted at the center of the bottom surface in the inverted frustoconical recess formed by the printed wiring board and each hole H2 in the substrate 102, and each electrode is a lead wire W by wire bonding, It is connected to the corresponding wiring pattern conductor 102c.

  As described above, according to the third embodiment, the same effects as those of the second embodiment can be obtained, and the formation of a plurality of depressions on the printed wiring board of the substrate 102 can be omitted. Easy to manufacture.

  In the third embodiment, the substrate 102 is configured to have a metal-based printed wiring board, but is not limited thereto, and may be configured to include, for example, a glass epoxy printed wiring board. Needless to say, the insulating layer 102b is unnecessary in this configuration.

  FIG. 4 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the fourth embodiment of the present invention. The fourth embodiment will be described below with reference to this figure. However, FIG. 4 shows a part of the sectional structure of the illumination light source.

  The illumination light source of FIG. 4 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 as in the third embodiment, and also includes a resin 301 as a difference from the third embodiment.

  The resin 301 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. In the phosphor, the concentration in the vicinity of the semiconductor light emitting device 200 mounted in the same recess is lower than that in other regions. Here, how to make the concentration non-uniform in this way will be explained. If the viscosity of the translucent resin is reduced and left in the upside down direction during molding, the phosphor settles in the translucent resin. Therefore, the density becomes non-uniform. Alternatively, if resins having different phosphor concentrations are prepared and molding is performed twice, or if pouring is performed twice, the concentration becomes non-uniform. However, in the latter case, a resin having a high viscosity is used.

  Next, an example of the manufacturing procedure of the illumination light source will be described. First, the substrate 102 is prepared, and the semiconductor light emitting element 200 is mounted at the center of the bottom surface in each recess. Subsequently, each electrode of the semiconductor light emitting element 200 is connected to the corresponding wiring pattern conductor 102c by the lead wire W by wire bonding. Thereafter, as the resin 301, first, a resin having a low phosphor concentration is filled in each depression of the substrate 102, and then a resin having a high phosphor concentration is filled. At this time, as shown in FIG. 4, the resin 301 is filled so as to rise up in a convex lens shape toward the upper side of the substrate 102.

  As described above, according to the fourth embodiment, it is possible to obtain the same effect as that of the third embodiment, and the phosphor in the resin 301 is in the vicinity of the semiconductor light emitting element 200 mounted in the same recess. Since the concentration is lower than that of other regions, it is possible to suppress deterioration due to simultaneous exposure of the resin 301 to high-energy blue light and high temperatures in the vicinity of the element. As a result, the lifetime as a light source can be reduced. It can be extended.

  FIG. 5 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the fifth embodiment of the present invention. The fifth embodiment will be described below with reference to this figure. However, FIG. 5 shows a part of the sectional structure of the illumination light source.

  The illumination light source of FIG. 5 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 as in the fourth embodiment, and also includes a resin 302 as a difference from the fourth embodiment.

  This resin 302 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Has a structure having a translucent resin 302a filled in a concave lens shape and a translucent resin 302b laminated on the resin 302a to disperse and hold the phosphor. This resin 302b is provided by coating or spraying, for example.

  As described above, according to the fifth embodiment, the same effect as that of the third embodiment can be obtained, and since the resin 302 is made of the resin 302a and the resin 302b, the resin 302b in the resin 302 has high energy blue light. Therefore, it is possible to prolong the life as a light source more suitably than in the fourth embodiment.

  In addition, it is possible to positively finely adjust the color tone. That is, the color tone of light emission is determined by the amount of phosphor. The higher the amount, the more yellow light component and the lower the color temperature, while the smaller the amount, the more blue light component and the color. Since the temperature becomes higher, if the structure of the fifth embodiment is adopted, the resin 302b as the phosphor layer can be laminated on the uppermost layer later, so that the color tone can be determined at the end of the process. . As a result, it becomes easier to adjust inventory.

  Furthermore, since the resin 302b as the phosphor layer can be laminated over a wide area, it is possible to improve optical characteristics such as uniformity.

  FIG. 6 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the sixth embodiment of the present invention. The sixth embodiment will be described below with reference to this figure. However, FIG. 6 shows a part of a sectional structure of the illumination light source.

  The illumination light source of FIG. 6 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 as in the fifth embodiment, and also includes a resin 303 as a difference from the fifth embodiment.

  This resin 303 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Has a structure having a translucent resin 303a filled in a convex lens shape in each depression of the substrate 102, and a translucent resin 303b laminated on the resin 303a to disperse and hold the phosphor. . However, unlike the fifth embodiment, the resin 303b is laminated on the uppermost layer of the substrate 102. A plurality of semiconductor light emitting elements 200 are mounted on the substrate 102. When these semiconductor light emitting elements 200 are viewed from a distance, for example, light may be emitted as a planar light source. Therefore, the resin 303b is stacked on one surface of the uppermost layer. be able to.

  As described above, according to the sixth embodiment, the same effect as that of the fifth embodiment can be obtained, and the resin 303b is laminated on one surface of the uppermost layer, so that the process is simplified as compared with the fifth embodiment. be able to.

  FIG. 7 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the seventh embodiment of the present invention. The seventh embodiment will be described below with reference to FIG. However, FIG. 7 shows a part of the sectional structure of the illumination light source.

  The illumination light source of FIG. 7 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 as in the sixth embodiment, and also includes a resin 304 as a difference from the sixth embodiment.

  This resin 304 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Has a structure having a translucent resin 304a filled in the entire depressions of the substrate 102 and a translucent resin 304b which is laminated on the resin 304a in a convex lens shape and holds the phosphors in a dispersed manner. ing. However, the resin 304 b is laminated on the entire top layer of the substrate 102.

  As described above, according to the seventh embodiment, it is possible to achieve the same effect as that of the sixth embodiment.

  FIG. 8 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the eighth embodiment of the present invention. The eighth embodiment will be described below with reference to this figure. However, FIG. 8 shows a part of a sectional structure of the illumination light source.

  The illumination light source of FIG. 8 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 as in the seventh embodiment, and also includes a resin 305 as a difference from the seventh embodiment.

  The resin 305 is made of a light-transmitting resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Includes a translucent resin 305a that fills the entire depressions of the substrate 102, a translucent resin 305b that is laminated on the resin 305a in a convex lens shape and that holds the phosphor in a dispersed manner, and the resin 305b And a translucent resin 305c laminated on the substrate. However, the resins 305b and 305c are sequentially laminated on the uppermost layer of the substrate 102.

  As described above, according to the eighth embodiment, the same effect as that of the seventh embodiment can be obtained, and since the resin 305b as the phosphor layer is protected by the lamination of the resin 305c, the phosphor layer is directly connected to the outside. It is possible to prevent the phosphor layer from being deteriorated due to reaction with moisture or the like.

  FIG. 9 is a schematic view showing a cross-sectional structure of an illumination light source according to the ninth embodiment of the present invention. The ninth embodiment will be described below with reference to this drawing. However, FIG. 9 shows a part of a sectional structure of the illumination light source.

  The illumination light source of FIG. 9 includes a substrate 102, a plurality of semiconductor light emitting elements 200, and the like as in the fifth embodiment, and also includes a resin 306 as a difference from the fifth embodiment.

  The resin 306 is made of a light-transmitting resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Includes a translucent resin 306a filled in each depression of the substrate 102 in the form of a convex lens, a translucent resin 306b that is laminated on the resin 306a with a uniform thickness and holds the phosphor in a dispersed manner, and the resin It has a structure having a light-transmitting resin 306c laminated on 306b. However, the resins 306b and 306c are individually provided in each recess of the substrate 102.

  As described above, according to the ninth embodiment, the same effect as that of the fifth embodiment can be obtained, and the resin 306b as the phosphor layer is protected by the lamination of the resin 306c. It is possible to prevent the phosphor layer from being deteriorated due to reaction with moisture or the like. Further, the irradiation angle can be controlled by adjusting the partial thickness of the resin 306c. Furthermore, since the thickness of the resin 306b is made uniform, the optical characteristics are improved.

  If a flexible silicone resin or the like is used for the resin 306a, damage to the element and the lead wire W due to thermal expansion or vibration of the resin can be prevented.

  FIG. 10 is a schematic view showing a cross-sectional structure of an illumination light source according to the tenth embodiment of the present invention. The tenth embodiment will be described below with reference to this figure. However, FIG. 10 shows a part of the sectional structure of the illumination light source.

  The illumination light source of FIG. 10 includes a substrate 100, a plurality of semiconductor light emitting elements 200, and the like as in the first embodiment, and also includes a resin 307 as a difference from the first embodiment.

  This resin 307 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Specifically, Includes a translucent resin 307a that fills each recess Cav of the substrate 100 in the form of a convex lens, a translucent resin 307b that is laminated on the resin 307a with a uniform thickness and holds the phosphor in a dispersed manner, The light-transmitting resin 307c laminated on the resin 307b has a structure. However, the resins 307 b and 307 c are individually provided in each recess Cav of the substrate 100. In addition, a flexible silicone resin is used for the resin 307a, and an epoxy resin having weather resistance is used for the resin 307c.

  As described above, according to the tenth embodiment, the same effects as those of the first embodiment can be obtained, and since the resin 307 is made of the resin 307a, the resin 307b, and the resin 307c, the resin 307b in the resin 307 has high energy. Therefore, the lifetime of the light source can be preferably extended.

  Further, since the resin 307b as the phosphor layer is protected by the lamination of the resin 307c, the phosphor layer is not directly exposed to the outside, and it is possible to prevent the phosphor layer from being deteriorated due to a reaction with moisture or the like. it can. Moreover, since the thickness of the resin 307b is made uniform, the optical characteristics are improved.

  Further, since a silicone resin is used for the resin 307a, stress applied to the element or the like can be reduced, and since an epoxy resin is used for the resin 307c, deterioration of the phosphor layer can be prevented.

  FIG. 11 is a schematic diagram showing a cross-sectional structure of an illumination light source according to an eleventh embodiment of the present invention. The eleventh embodiment will be described below with reference to this figure. However, FIG. 11 shows a part of the sectional structure of the illumination light source.

  The illumination light source of FIG. 11 includes a substrate 100, a plurality of semiconductor light emitting elements 200, and the like as in the tenth embodiment, and also includes a resin 308 as a difference from the tenth embodiment.

  This resin 308 is made of a light-transmitting resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Includes a translucent resin 308a that fills the entire cavity Cav of the substrate 100, and a translucent resin 308b that is laminated on the resin 308a in a plate shape with a uniform thickness and that disperses and holds the phosphor. The resin 308b has a translucent resin 308c laminated in a convex lens shape. However, the resins 308 b and 308 c are individually provided in each recess Cav of the substrate 100. The resin 308a may be an epoxy resin, but a flexible silicone resin is used, and the resin 308c is a weather resistant epoxy resin. Furthermore, the resin 308b is formed in a plate shape in advance.

  Next, a manufacturing procedure of the illumination light source having the above configuration will be described. First, the substrate 100 is prepared, and the semiconductor light emitting element 200 is mounted at the center of the bottom surface in each recess Cav. Subsequently, each electrode of the semiconductor light emitting element 200 is connected to the corresponding wiring pattern conductor 100c by the lead wire W by wire bonding. Thereafter, as the resin 308, the resin 308a is first filled in each recess of the substrate 100, the resin 308b is placed, and then the resin 308c is laminated in a convex lens shape.

  As described above, according to the eleventh embodiment, the same effect as that of the tenth embodiment can be obtained, and the thickness of the resin 308b can be controlled by making the concentration of the phosphor contained in the resin 308b constant. It is very easy to quantitatively control the phosphor. As a result, the amount of the phosphor can be made uniform as a whole, and the amount of the phosphor can be adjusted to a predetermined constant value, so that variation in color can be prevented.

  FIG. 12 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the twelfth embodiment of the present invention. The twelfth embodiment will be described below with reference to this figure. However, FIG. 12 shows a part of a sectional structure of the illumination light source.

  The illumination light source of FIG. 12 includes a substrate 100, a plurality of semiconductor light emitting elements 200, and the like as in the first embodiment, and also includes a resin 310 as a difference from the first embodiment.

  The resin 310 is made of a light-transmitting resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Has a structure having a translucent resin 310a filled in the entire cavity Cav of the substrate 100, and a translucent resin 310b that is laminated on the resin 310a in a convex lens shape to disperse and hold the phosphor. It has become. However, a silicone resin is used for the resin 310a, and an epoxy resin is used for the resin 310b.

  In this configuration, the amount of the phosphor-containing resin is greatly increased as compared with the conventional cup filled with the element. In the conventional cup, the diameter of the resin is 1 mm at most, but in the twelfth embodiment, the diameter of the resin 310b is 3 mm or more, so the capacity is about 10 times, so the phosphor concentration is reduced to 1/10. It can be suppressed to the extent. And if the content density | concentration of fluorescent substance is low, the residence time of high energy light will become short, and the degree of local coloring deterioration of resin will become low. In addition, the resin containing the phosphor is likely to deteriorate in proportion to the intensity of light from the semiconductor light emitting device 200, but is less likely to deteriorate exponentially as the temperature increases from the semiconductor light emitting device 200. The region where the light is scattered and stays in the phosphor is also 10 times the volume, and further, the resin 310a is interposed between them, and the low concentration of the above is added, so that the resin containing the phosphor is hardly deteriorated. Become.

  As described above, according to the twelfth embodiment, the same effect as that of the first embodiment can be obtained, and as described above, the resin 310b can be simultaneously exposed to the high energy blue light and the high temperature in the vicinity of the element. Therefore, it is possible to suitably extend the life as a light source.

  Since each light source is directly formed on the substrate 100, a wider area can be allocated to the optical system, and light distribution control can be performed even if each mounting area is enlarged as described above.

  Furthermore, since a silicone resin is used for the resin 310a, stress applied to the element can be reduced, and since an epoxy resin is used for the resin 310b, deterioration of the phosphor layer can be prevented.

  FIG. 13 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a thirteenth embodiment of the present invention, and FIG. 14 is an explanatory diagram of the manufacturing procedure of the illumination light source shown in FIG. The form will be described. However, FIG. 13 shows a part of the sectional structure of the illumination light source.

  The illumination light source of the thirteenth embodiment is applicable to each of the embodiments of FIGS. 7 to 12. In the example of FIG. 13, the substrate 102 and the plurality of semiconductor light emitting elements 200 are the same as those of the eighth embodiment, for example. The resin 309 is provided as a feature of the thirteenth embodiment.

  This resin 309 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light. Is a translucent resin 309a which is filled almost entirely in each recess of the substrate 102, and a translucent resin 309b which is laminated on the resin 309a in a plate shape with a uniform thickness and holds the phosphors in a dispersed manner. And a translucent resin 309c laminated in a convex lens shape on the resin 309b. However, the resins 309b and 309c are integrally formed in advance as shown in FIG. 14B, and are individually provided in each recess of the substrate 102.

  Next, a manufacturing procedure of the illumination light source having the above configuration will be described. First, the substrate 102 is prepared, and the semiconductor light emitting element 200 is mounted at the center of the bottom surface in each recess. Subsequently, each electrode of the semiconductor light emitting element 200 is connected to the corresponding wiring pattern conductor 102c by the lead wire W by wire bonding. Thereafter, the resin 309 is filled with the resin 309a as the resin 309 (see FIG. 14A), and then the integrally formed resins 309b and 309c are laminated on the resin 309a.

  As described above, according to the thirteenth embodiment, since the number of times of mounting is only one, the cost can be reduced and the separately provided resins 309b and 309c can be easily replaced.

  As described above, as described in the above embodiments, the number of steps can be reduced and the structure can be homogenized by the resin containing the phosphor and the lens-like resin. Further, by using a resin having flexibility in the peripheral portion of the semiconductor light emitting element 200, deterioration of the element and coloring of the resin can be reduced, and the life of the light source can be extended. In addition, the phosphor containing resin can be made very large compared to the case where the cup in which the element is mounted is filled with the phosphor, and the heat dissipation is improved by the metal base and the reflection frame, so that the phosphor and the resin are deteriorated. It is difficult, and the luminous flux decay life of the light source is prolonged.

  In the thirteenth embodiment, the resins 309b and 309c are integrally formed in advance. However, the present invention is not limited to this, and a glass member having the same shape as the resin 309c is used, and the glass member and the resin 309b are integrated in advance. You may make it form. In this case, the phosphor does not need to be contained in the resin and can be fired. That is, the phosphor layer for dispersing and holding the phosphor may be laminated on the convex lens body of the glass member instead of the resin 309c by firing.

  In the thirteenth embodiment, the resin 309 is composed of the resins 309a, 309b, and 309c. However, since the resins 309b and 309c are integrally formed, the lower resin 309a may be omitted. Absent. In this case as well, the same effects as those of the thirteenth embodiment can be obtained, and since the resin is free, the weather resistance or the life can be improved.

It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 1st Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 2nd Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 3rd Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 4th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 5th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 6th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 7th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 8th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 9th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 10th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 11th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 12th Embodiment of this invention. It is a schematic diagram which shows the cross-section of the illumination light source which concerns on 13th Embodiment of this invention. It is explanatory drawing of the manufacture procedure of the illumination light source shown in FIG. It is a schematic diagram which shows the cross-section of the conventional light emitting diode. It is a schematic diagram which shows the cross-section of the conventional light emitting diode. It is a schematic diagram which shows the cross-sectional structure of the conventional planar light emission source. It is a schematic diagram which shows the conventional LED display.

Explanation of symbols

100 to 102 Substrate 200 Semiconductor light emitting element 300 to 310 Resin

Claims (5)

A manufacturing method of an illumination light source comprising a substrate, a semiconductor light emitting element mounted on the substrate, and a lens body, and having a phosphor layer in front of the semiconductor light emitting element,
Preparing a fluorescent lens body formed by integrating the lens body and the phosphor layer;
The method for manufacturing an illumination light source, wherein the fluorescent lens body is disposed in front of the semiconductor light emitting element. A substrate,
A plurality of semiconductor light emitting devices mounted on the substrate;
An illumination light source comprising: a plurality of individual fluorescent lens bodies individually disposed in front of the plurality of semiconductor light emitting elements. 3. The illumination light source according to claim 2, wherein the individual fluorescent lens body includes a lens body and a translucent phosphor layer that holds the phosphor in a dispersed manner and is laminated behind the lens body. . The lens body is made of glass,
The illumination light source according to claim 3, wherein the phosphor layer is laminated on the glass lens body by firing. The illumination light source according to claim 4, wherein the rear side of the individual fluorescent lens body is hollow without resin sealing.

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