JP2007088091A - Light-emitting device - Google Patents

Light-emitting device Download PDF

Info

Publication number
JP2007088091A
JP2007088091A JP2005272868A JP2005272868A JP2007088091A JP 2007088091 A JP2007088091 A JP 2007088091A JP 2005272868 A JP2005272868 A JP 2005272868A JP 2005272868 A JP2005272868 A JP 2005272868A JP 2007088091 A JP2007088091 A JP 2007088091A
Authority
JP
Japan
Prior art keywords
led chip
lens
light
reflector
conversion member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005272868A
Other languages
Japanese (ja)
Other versions
JP4820135B2 (en
Inventor
Sakuo Kamata
策雄 鎌田
Yasushi Nishioka
恭志 西岡
Yoji Urano
洋二 浦野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2005272868A priority Critical patent/JP4820135B2/en
Publication of JP2007088091A publication Critical patent/JP2007088091A/en
Application granted granted Critical
Publication of JP4820135B2 publication Critical patent/JP4820135B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of improving reliability and directivity. <P>SOLUTION: The light-emitting device includes a reflector 40 for surrounding an LED chip at the packaging surface side of the LED chip 10 in a packaging substrate 20; a sealing section 50 for sealing the LED chip 10 and bonding wires 14, 14 connected to the LED chip inside the reflector; a lens 60 arranged while being overlapped to the sealing section and the reflector 40; and a dome-like color conversion member 70 that is a molding in which a yellow phosphor excited by blue light radiated from the LED chip 10 is formed with a transparent material, covers the lens 60 at the packaging surface side of the packaging substrate 20, and is arranged so that an air layer 80 is formed at an area to a light emission surface 60b of the lens. The sealing section 50 is formed by filling a silicone resin into the reflector 40 and the lens 60 is composed of a convex lens comprising a molding of silicone resins. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップおよび当該LEDチップに接続されたボンディングワイヤを封止したエポキシ樹脂からなる封止部とを備え、封止部の一部を凸レンズ状の形状とすることで放射される光の指向性を高めた発光装置が提案されている(例えば、特許文献1)。なお、上記特許文献1には、青色光ないし紫外光を放射するLEDチップと当該LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体とを組み合わせることにより、白色を含めLEDチップの発光色とは異なる色合いの混色光を得る技術が開示されている。
特開2003−243724号公報
Conventionally, an LED chip, a mounting substrate on which the LED chip is mounted, and an epoxy resin sealing the LED chip and a bonding wire connected to the LED chip on the mounting surface side of the LED chip on the mounting substrate There has been proposed a light emitting device that has a directivity of light emitted by forming a part of the sealing portion into a convex lens shape (for example, Patent Document 1). In Patent Document 1, an LED chip that emits blue light or ultraviolet light and a phosphor that emits light of a color different from the emission color of the LED chip when excited by the light emitted from the LED chip. A technique for obtaining mixed color light having a hue different from the emission color of the LED chip including white is disclosed.
JP 2003-243724 A

しかしながら、上記特許文献1に記載の発光装置のように封止部の材料としてエポキシ樹脂を用いたものでは、封止部の耐候性が低く、しかも、LEDチップが青色光を放射する青色LEDチップの場合には封止部が青色光により劣化しやすいという不具合があった。   However, in the case where an epoxy resin is used as the material of the sealing portion as in the light emitting device described in Patent Document 1, the weather resistance of the sealing portion is low, and the blue LED chip emits blue light. In this case, there is a problem that the sealing portion is easily deteriorated by blue light.

本発明は上記事由に鑑みて為されたものであり、その目的は、信頼性および指向性を高めることができる発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a light-emitting device capable of improving reliability and directivity.

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲みLEDチップから放射された光を反射するリフレクタであって前記実装面から離れるにつれて開口面積が徐々に大きくなる形状に形成されたリフレクタと、リフレクタの内側でLEDチップおよび当該LEDチップに電気的に接続されたボンディングワイヤを封止した封止部と、封止部に重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板の前記実装面側でレンズを覆いレンズの光出射面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、封止部がリフレクタの内側にシリコーン樹脂を充填して形成され、レンズが凸レンズからなることを特徴とする。   The invention of claim 1 is an LED chip, a mounting substrate on which the LED chip is mounted, and a reflector that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate and reflects light emitted from the LED chip. A reflector having a shape in which an opening area gradually increases as the distance from the mounting surface increases; a sealing portion that seals an LED chip and a bonding wire electrically connected to the LED chip inside the reflector; A molded product that is molded with a transparent material and a lens that is placed over the stop and a phosphor that emits light of a color different from the emission color of the LED chip when excited by the light emitted from the LED chip. A dome-like color conversion member that covers the lens on the mounting surface side of the substrate and is disposed in a form in which an air layer is formed between the lens and the light exit surface. The provided, the sealing portion is formed by filling a silicone resin on the inside of the reflector, the lens is characterized in that it consists of a convex lens.

この発明によれば、封止部がシリコーン樹脂により形成されているので、封止部の信頼性を高めることができ、レンズが凸レンズからなるので、指向性を高めることができる。また、レンズの光出射面との間に空気層が形成される形で配設される色変換部材を備えていることにより、LEDチップから放射される光と色変換部材の蛍光体から放射される光との混色光を得ることができるだけでなくレンズを保護することができ、しかも、色変換部材に外力が作用したときに色変換部材に発生した応力がレンズおよび封止部を通してLEDチップやボンディングワイヤに伝達されるのを抑制でき、前記外力に起因したLEDチップの発光特性の変動やボンディングワイヤの断線を抑制できるから、信頼性をより高めることができる。   According to this invention, since the sealing part is formed of the silicone resin, the reliability of the sealing part can be increased, and the lens is made of a convex lens, so that the directivity can be increased. Further, by providing a color conversion member disposed in such a manner that an air layer is formed between the light emitting surface of the lens, the light emitted from the LED chip and the phosphor of the color conversion member are emitted. In addition to being able to obtain mixed color light with the light to be transmitted, the lens can be protected, and the stress generated in the color conversion member when an external force is applied to the color conversion member is applied to the LED chip or the Since transmission to the bonding wire can be suppressed and fluctuations in the light emission characteristics of the LED chip and disconnection of the bonding wire due to the external force can be suppressed, the reliability can be further improved.

請求項1の発明では、信頼性および指向性を高めることができるという効果がある。   In the invention of claim 1, there is an effect that reliability and directivity can be improved.

以下、本実施形態の発光装置について図1〜図5を参照しながら説明する。   Hereinafter, the light-emitting device of the present embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲みLEDチップ10から放射された光を反射する枠状のリフレクタ40と、リフレクタ40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50と、封止部50およびリフレクタ40に重ねて配置されるレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズ60の光出射面60b側にレンズ60を覆い光出射面60bとの間に空気層80が形成される形で配設されるドーム状の色変換部材70とを備えている。なお、本実施形態の発光装置1は、例えばスポットライトなどの照明器具の光源として用いるものであり、例えばグリーンシートからなる絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に実装することで、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。ここで、照明器具の場合には、所望の光出力が得られるように、器具本体100に複数個の発光装置1を実装して(なお、図5では、10個の発光装置1を有底円筒状の器具本体100の底壁の内底面において周方向に沿って等間隔で配置した例を示してある)、複数個の発光装置1を直列接続したり並列接続したりすればよい。   The light emitting device 1 of the present embodiment radiates from the LED chip 10, the LED chip 10, the mounting substrate 20 on which the LED chip 10 is mounted, the LED chip 10 on the mounting substrate 20 side of the mounting substrate 20. A frame-like reflector 40 that reflects light, and a transparent resin material filled inside the reflector 40 to seal the LED chip 10 and bonding wires 14 and 14 connected to the LED chip 10 and to provide elasticity. The sealing part 50 having the lens, the lens 60 disposed so as to overlap the sealing part 50 and the reflector 40, and the light emitted from the LED chip 10 to emit light of a color different from the emission color of the LED chip 10. A molded product obtained by molding a fluorescent material together with a transparent material, covering the lens 60 on the light emitting surface 60b side of the lens 60, and the light emitting surface 60 And a color conversion member 70 domed disposed in the form of an air layer 80 is formed between the. The light-emitting device 1 of the present embodiment is used as a light source of a lighting fixture such as a spotlight, for example, and has a metal (for example, Al, Cu or the like having a thermal conductivity through an insulating layer 90 made of a green sheet, for example. By mounting on the device body 100 made of a high metal), the thermal resistance from the LED chip 10 to the device body 100 can be reduced, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed. Therefore, the input power can be increased and the optical output can be increased. Here, in the case of a lighting fixture, a plurality of light emitting devices 1 are mounted on the fixture main body 100 so as to obtain a desired light output (in FIG. 5, ten light emitting devices 1 are bottomed). An example is shown in which the inner bottom surface of the bottom wall of the cylindrical instrument body 100 is arranged at equal intervals along the circumferential direction), and a plurality of light emitting devices 1 may be connected in series or in parallel.

実装基板20は、LEDチップ10が搭載される金属板21と、金属板21に積層されたガラスエポキシ基板からなる絶縁性基材22とで構成されており、当該絶縁性基材22における金属板21側とは反対側の表面にLEDチップ10の図示しない両電極それぞれと電気的に接続される一対のリードパターン23が設けられるとともに、絶縁性基材22においてLEDチップ10に対応する部位に窓孔24が設けられており、LEDチップ10で発生した熱が絶縁性基材22を介さずに金属板21に伝熱できるようになっている。ここにおいて、金属板21の材料としてはCuを採用しているが、熱伝導率の比較的高い金属材料であればよく、Cuに限らず、Alなどを採用してもよい。なお、金属板21と絶縁性基材22とは、絶縁性を有するシート状の接着フィルムからなる固着材25により固着されている。また、各リードパターン23は、Ni膜とAu膜との積層膜により構成されており、色変換部材70により覆われていない部位がアウターリード部23bとなっている。また、絶縁性基材22は、窓孔24の周囲に、LEDチップ10から放射された光を反射する反射膜27が形成されている。ここで、反射膜27は、Ni膜とAg膜との積層膜により構成されている。   The mounting substrate 20 includes a metal plate 21 on which the LED chip 10 is mounted, and an insulating base material 22 made of a glass epoxy substrate laminated on the metal plate 21, and the metal plate in the insulating base material 22. A pair of lead patterns 23 that are electrically connected to both electrodes (not shown) of the LED chip 10 are provided on the surface opposite to the 21 side, and a window is formed at a portion corresponding to the LED chip 10 in the insulating substrate 22. A hole 24 is provided so that heat generated in the LED chip 10 can be transferred to the metal plate 21 without passing through the insulating base material 22. Here, Cu is employed as the material of the metal plate 21, but any metal material having a relatively high thermal conductivity may be used, and not only Cu but Al or the like may be employed. In addition, the metal plate 21 and the insulating base material 22 are fixed by a fixing material 25 made of an insulating sheet-like adhesive film. Each lead pattern 23 is composed of a laminated film of a Ni film and an Au film, and a portion not covered with the color conversion member 70 is an outer lead portion 23b. Further, the insulating base material 22 is formed with a reflection film 27 that reflects light emitted from the LED chip 10 around the window hole 24. Here, the reflection film 27 is formed of a laminated film of a Ni film and an Ag film.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が導電性基板11よりも金属板21から離れた側となるように金属板21に実装されているが、LEDチップ10の発光部12が導電性基板11よりも金属板21に近い側となるように金属板21に実装するようにしてもよい。光取り出し効率を考えた場合には、発光部12を金属板21から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を金属板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light-emitting portion 12 is formed of a GaN-based compound semiconductor material on the main surface side of the conductive substrate 11 and has a laminated structure portion having, for example, a double hetero structure. ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is mounted on the metal plate 21 so as to be on the side farther from the metal plate 21 than the conductive substrate 11. The conductive plate 11 may be mounted on the metal plate 21 so as to be closer to the metal plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the metal plate 21, but in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the metal plate 21, the light extraction loss does not become too large.

また、LEDチップ10は、上述の金属板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と金属板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して実装されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を金属板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10は、上記カソード電極がサブマウント部材30におけるLEDチップ10側の表面に設けられ上記カソード電極と接続される導体パターン31(図2参照)および金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して一方のリードパターン23と電気的に接続され、上記アノード電極がボンディングワイヤ14を介して他方のリードパターン23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましい。   Further, the LED chip 10 is formed on the metal plate 21 in the shape of a rectangular plate having a size larger than the chip size of the LED chip 10, and the LED chip 10 is caused by the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21. It is mounted via a submount member 30 that relieves stress acting on the chip 10. The submount member 30 has not only a function of relieving the stress, but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 on the metal plate 21. . In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. Electrically connected to one lead pattern 23 via a bonding wire 14 provided on the surface and connected to the cathode electrode (see FIG. 2) and a metal wire (for example, a gold wire, an aluminum wire, etc.) The anode electrode is electrically connected to the other lead pattern 23 via the bonding wire 14. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. It is preferable.

サブマウント部材30の材料はAlNに限らず、線膨張率が導電性基板11の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to 6H—SiC that is the material of the conductive substrate 11 and the heat conductivity is relatively high. Si or the like may be employed.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いており、封止部50がゲル状であって弾性を有している。   A silicone resin is used as the transparent resin material of the sealing portion 50 described above, and the sealing portion 50 is gel-like and has elasticity.

リフレクタ40は、円形状に開口した枠状の形状であって、LEDチップ10の側面から放射された光がレンズ60側へ反射されるように内側面40aの形状が設計されている。すなわち、リフレクタ40は、LEDチップ10の厚み方向においてLEDチップ10から離れるに従って開口面積が大きくなる形状(つまり、上記実装面から離れるにつれて開口面積が徐々に大きくなる形状)に形成されている。ここにおいて、リフレクタ40の材料としては、LEDチップ10から放射される光(ここでは、青色光)に対する反射率が比較的大きな材料(例えば、Alなど)を採用し、リフレクタ40の内側面40aを鏡面とすればよく、リフレクタ40は例えばアルミニウムの基材を絞り加工して形成すればよい。また、リフレクタ40は、絶縁性を有するシート状の接着フィルムからなる固着材26により実装基板20に固着されている。なお、本実施形態では、リフレクタ40を実装基板20に固着した後でリフレクタ40の内側に上記透明樹脂材料を充填(ポッティング)して熱硬化させることで封止部50を形成してある。   The reflector 40 has a frame shape opened in a circular shape, and the shape of the inner side surface 40a is designed so that light emitted from the side surface of the LED chip 10 is reflected toward the lens 60 side. That is, the reflector 40 is formed in a shape in which the opening area increases as the distance from the LED chip 10 increases in the thickness direction of the LED chip 10 (that is, the shape in which the opening area gradually increases as the distance from the mounting surface increases). Here, as the material of the reflector 40, a material (for example, Al) having a relatively high reflectance with respect to light emitted from the LED chip 10 (here, blue light) is adopted, and the inner side surface 40a of the reflector 40 is used. What is necessary is just to make it a mirror surface, and the reflector 40 should just be formed, for example by drawing an aluminum base material. In addition, the reflector 40 is fixed to the mounting substrate 20 with a fixing material 26 made of an insulating sheet-like adhesive film. In the present embodiment, after the reflector 40 is fixed to the mounting substrate 20, the sealing portion 50 is formed by filling (potting) the transparent resin material inside the reflector 40 and thermosetting it.

レンズ60は、封止部50側の光入射面60aが平面状に形成されるとともに光出射面60bが凸曲面状に形成された凸レンズにより構成されている。ここにおいて、レンズ60は、シリコーン樹脂の成形品により構成してあり、封止部50と屈折率が同じ値となっているが、レンズ60は、シリコーン樹脂の成形品に限らず、例えば、アクリル樹脂の成形品により構成してもよい。   The lens 60 is configured by a convex lens in which the light incident surface 60a on the sealing portion 50 side is formed in a flat shape and the light emitting surface 60b is formed in a convex curved surface shape. Here, the lens 60 is formed of a molded product of silicone resin, and the refractive index is the same as that of the sealing portion 50. However, the lens 60 is not limited to the molded product of silicone resin. You may comprise by the molded article of resin.

ところで、レンズ60とリフレクタ40とは互いの光軸が一致し且つ各光軸がLEDチップ10を通るように配置されており、レンズ60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されている。ここで、レンズ60は、光出射面60bが球面の一部により形成されており、当該球面の中心がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。したがって、LEDチップ10から放射された光(LEDチップ10から放射されリフレクタ40に反射されることなくレンズ60の光入射面60aに入射された光およびLEDチップ10から放射されリフレクタ40の内側面40aで反射されてレンズ60の光入射面60aに入射した光)が光出射面60bと空気層80との境界で全反射されることなく色変換部材70まで到達しやすくなり、全光束を高めることができる。   Incidentally, the lens 60 and the reflector 40 are arranged so that their optical axes coincide with each other and each optical axis passes through the LED chip 10, and the lens 60 has a light emitting surface 60b incident from the light incident surface 60a. It is formed in a convex curved surface shape that does not totally reflect light at the boundary between the light emitting surface 60b and the air layer 80 described above. Here, the lens 60 is formed such that the light emitting surface 60 b is formed by a part of a spherical surface, and the center of the spherical surface is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. Yes. Therefore, the light emitted from the LED chip 10 (the light emitted from the LED chip 10 and incident on the light incident surface 60a of the lens 60 without being reflected by the reflector 40, and the inner surface 40a of the reflector 40 emitted from the LED chip 10). The light that has been reflected by the light and incident on the light incident surface 60a of the lens 60 is not easily totally reflected at the boundary between the light emitting surface 60b and the air layer 80, and can easily reach the color conversion member 70, thereby increasing the total luminous flux. Can do.

色変換部材70は、シリコーン樹脂のような透明材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、色変換部材70の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded article in which a transparent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10 are mixed. It is comprised by. Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light is obtained. Can do. Note that the transparent material used as the material of the color conversion member 70 is not limited to the silicone resin, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、内面70aがレンズ60の光出射面60bに沿った形状に形成されている。したがって、レンズ60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材70は、開口部の周縁をリフレクタ40に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   Here, the color conversion member 70 has an inner surface 70 a formed in a shape along the light emitting surface 60 b of the lens 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be bonded to the reflector 40 at the periphery of the opening using, for example, an adhesive (for example, silicone resin, epoxy resin).

ところで、上述のリフレクタ40は、実装基板20側とは反対の表面の周部に、色変換部材70を囲み色変換部材70を位置決めする環状の位置決めリブ41が連続一体に突設されている。しかして、本実施形態では、リフレクタ40に対して色変換部材70を高精度に位置決めすることができる。   By the way, in the reflector 40 described above, an annular positioning rib 41 that surrounds the color conversion member 70 and positions the color conversion member 70 is continuously and integrally provided on the periphery of the surface opposite to the mounting substrate 20 side. Therefore, in this embodiment, the color conversion member 70 can be positioned with high accuracy with respect to the reflector 40.

以上説明した本実施形態の発光装置1では、リフレクタ40の内側にシリコーン樹脂を充填して形成されてLEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止した封止部50を備えているので、封止部50の材料として従来のようにエポキシ樹脂を用いる場合に比べて封止部50の耐候性を高めることができるとともに、LEDチップ10から放射された光による劣化が起こりにくくなる。   In the light emitting device 1 of the present embodiment described above, the sealing portion formed by filling the inside of the reflector 40 with silicone resin and sealing the LED chip 10 and the bonding wires 14 and 14 connected to the LED chip 10. 50, the weather resistance of the sealing part 50 can be improved as compared with the conventional case where an epoxy resin is used as the material of the sealing part 50, and the deterioration due to the light emitted from the LED chip 10 Is less likely to occur.

また、本実施形態の発光装置1では、封止部50とは別に形成された凸レンズからなるレンズ60が封止部50に重ねて固着されているので、放射する光の指向性を高めることができ、特にスポットライトなどの照明器具のように指向性の要求の高い照明器具の光源として適している。   Further, in the light emitting device 1 of the present embodiment, since the lens 60 made of a convex lens formed separately from the sealing portion 50 is fixed to the sealing portion 50 in an overlapping manner, the directivity of the emitted light can be improved. In particular, it is suitable as a light source for a luminaire having a high directivity requirement such as a luminaire such as a spotlight.

また、本実施形態の発光装置1では、色変換部材70はレンズ60の光出射面60bとの間に空気層80が形成される形で配設すればよく、色変換部材70をレンズ60に密着させる必要がないので、色変換部材70の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できる。また、本実施形態の発光装置1では、組立時に色変換部材70の組付けが最終工程となるので、LEDチップ10の発光波長に応じて透明材料に対する蛍光体の配合を調整した色変換部材70を用いることで色ばらつきを低減することもできる。   Further, in the light emitting device 1 of the present embodiment, the color conversion member 70 may be disposed in a form in which the air layer 80 is formed between the light emitting surface 60 b of the lens 60, and the color conversion member 70 is attached to the lens 60. Since it is not necessary to make it closely_contact | adhere, the fall of the yield resulting from the dimensional accuracy and positioning accuracy of the color conversion member 70 can be suppressed. Further, in the light emitting device 1 of the present embodiment, since the assembly of the color conversion member 70 is the final process at the time of assembly, the color conversion member 70 in which the blending of the phosphor with respect to the transparent material is adjusted according to the emission wavelength of the LED chip 10. By using, color variations can be reduced.

また、本実施形態の発光装置1では、上述のように色変換部材70とレンズ60との間に空気層80が形成されているので、色変換部材70に外力が作用したときに色変換部材70が変形してレンズ60に当接する可能性が低くなって上記外力により色変換部材70に発生した応力がレンズ60および封止部50を通してLEDチップ10や各ボンディングワイヤ14,14に伝達されるのを抑制でき、上記外力によるLEDチップ10の発光特性の変動や各ボンディングワイヤ14,14の断線が起こりにくくなるから、信頼性が向上するという利点がある。また、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、外部雰囲気中の水分がLEDチップ10に到達しにくくなるという利点がある。   Further, in the light emitting device 1 of the present embodiment, since the air layer 80 is formed between the color conversion member 70 and the lens 60 as described above, the color conversion member when an external force acts on the color conversion member 70. The possibility that the lens 70 is deformed and abutted against the lens 60 is reduced, and the stress generated in the color conversion member 70 due to the external force is transmitted to the LED chip 10 and the bonding wires 14 and 14 through the lens 60 and the sealing portion 50. Therefore, there is an advantage that reliability is improved because fluctuations in the light emission characteristics of the LED chip 10 due to the external force and disconnection of the bonding wires 14 and 14 are less likely to occur. In addition, since the air layer 80 is formed between the color conversion member 70 and the lens 60, there is an advantage that moisture in the external atmosphere hardly reaches the LED chip 10.

また、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、LEDチップ10から放射され封止部50およびレンズ60を通して色変換部材70に入射し当該色変換部材70中の黄色蛍光体の粒子により散乱された光のうちレンズ60側へ散乱されてレンズ60を透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点がある。   In addition, since the air layer 80 is formed between the color conversion member 70 and the lens 60, the color conversion member 70 is emitted from the LED chip 10 and enters the color conversion member 70 through the sealing portion 50 and the lens 60. Among the light scattered by the yellow phosphor particles in 70, there is an advantage that the amount of light scattered to the lens 60 side and transmitted through the lens 60 can be reduced, and the light extraction efficiency to the outside as the entire apparatus can be improved. is there.

ここで、図6(a),(b)に示すように、色変換部材70の光軸とLEDチップ10の光軸とが一致しており、色変換部材70における光軸方向の中央の位置PでLEDチップ10からの青色光が全方位に散乱されたとし、色変換部材70と空気層80との界面での全反射角をφa、色変換部材70と当該色変換部材70の外側の媒質である空気との界面での全反射角をφb、位置Pで散乱された光に関して色変換部材70の内面70a側のエスケープコーンECaの広がり角を2θa、位置Pで散乱された光に関して色変換部材70の外面70b側のエスケープコーンECbの広がり角を2θbとすれば、図6(a)に示すように全反射角φa,φbが40°のときには2θa=60°、2θb=98°となり、図6(b)に示すように全反射角φa,φbが50°のときには2θa=76°、2θb=134°となる。   Here, as shown in FIGS. 6A and 6B, the optical axis of the color conversion member 70 and the optical axis of the LED chip 10 coincide with each other, and the central position of the color conversion member 70 in the optical axis direction. It is assumed that the blue light from the LED chip 10 is scattered in all directions by P, the total reflection angle at the interface between the color conversion member 70 and the air layer 80 is φa, and the color conversion member 70 and the outside of the color conversion member 70 are outside. The total reflection angle at the interface with air, which is the medium, is φb, and the light scattered at the position P is 2θa, the spread angle of the escape cone ECa on the inner surface 70a side of the color conversion member 70, and the color is scattered with respect to the light scattered at the position P. If the spread angle of the escape cone ECb on the outer surface 70b side of the conversion member 70 is 2θb, as shown in FIG. 6A, when the total reflection angles φa and φb are 40 °, 2θa = 60 ° and 2θb = 98 °. As shown in FIG. 6B, the total reflection angle When φa and φb are 50 °, 2θa = 76 ° and 2θb = 134 °.

ここにおいて、色変換部材70に用いている透明材料の屈折率をn、位置Pで散乱され内面70a側のエスケープコーンECaを通して放出される青色光の最大放出効率をηとすれば、η=(1/4n2)×100〔%〕で表されるので、上述のように透明材料としてシリコーン樹脂を用いている場合には、n=1.4として、η≒13%となる。したがって、色変換部材70とレンズ60との間に空気層80が形成されていない場合には、位置Pで散乱された青色光の50%がレンズ60に戻ってしまうのに対して、空気層80を形成したことにより、位置Pで散乱された青色光の13%しかレンズ60に戻らなくなるので、青色光による封止部50の劣化を抑制できる。なお、エスケープコーンECaを通して放出される青色光を少なくするには、色変換部材70の厚みを大きくすることが望ましい。 Here, if the refractive index of the transparent material used for the color conversion member 70 is n and the maximum emission efficiency of blue light scattered at the position P and emitted through the escape cone ECa on the inner surface 70a is η, η = ( ¼n 2 ) × 100 [%], so that when silicone resin is used as the transparent material as described above, η≈13% when n = 1.4. Therefore, when the air layer 80 is not formed between the color conversion member 70 and the lens 60, 50% of the blue light scattered at the position P returns to the lens 60, whereas the air layer Since 80 is formed, only 13% of the blue light scattered at the position P returns to the lens 60, so that deterioration of the sealing portion 50 due to the blue light can be suppressed. In order to reduce the blue light emitted through the escape cone ECa, it is desirable to increase the thickness of the color conversion member 70.

ところで、上述の実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in the above-described embodiment, a blue LED chip whose emission color is blue is adopted as the LED chip 10, and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate is used instead of the SiC substrate. In the case of using a SiC substrate or a GaN substrate, the crystal growth substrate has a higher thermal conductivity than the case of using a sapphire substrate as an insulator as the crystal growth substrate. Thermal resistance can be reduced. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.

実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上を示す要部概略平面図である。It is a principal part schematic plan view which shows the same as the above. 同上における絶縁性基材を示し、(a)は概略平面図、(b)は概略断面図である。The insulating base material same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view. 同上を用いた照明器具を示し、(a)は要部概略平面図、(b)は要部概略断面図である。The lighting fixture using the same is shown, (a) is a principal part schematic plan view, (b) is a principal part schematic sectional drawing. 同上の要部説明図である。It is principal part explanatory drawing same as the above.

符号の説明Explanation of symbols

10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 金属板
22 絶縁性基材
23 リードパターン
30 サブマウント部材
40 リフレクタ
50 封止部
60 レンズ
60a 光入射面
60b 光出射面
70 色変換部材
80 空気層
DESCRIPTION OF SYMBOLS 10 LED chip 14 Bonding wire 20 Mounting board 21 Metal plate 22 Insulating base material 23 Lead pattern 30 Submount member 40 Reflector 50 Sealing part 60 Lens 60a Light incident surface 60b Light output surface 70 Color conversion member 80 Air layer

Claims (1)

LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲みLEDチップから放射された光を反射するリフレクタであって前記実装面から離れるにつれて開口面積が徐々に大きくなる形状に形成されたリフレクタと、リフレクタの内側でLEDチップおよび当該LEDチップに電気的に接続されたボンディングワイヤを封止した封止部と、封止部に重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板の前記実装面側でレンズを覆いレンズの光出射面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、封止部がリフレクタの内側にシリコーン樹脂を充填して形成され、レンズが凸レンズからなることを特徴とする発光装置。   An LED chip, a mounting substrate on which the LED chip is mounted, and a reflector that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate and reflects light emitted from the LED chip, and opens as the distance from the mounting surface increases A reflector formed in a shape that gradually increases in area, a sealing portion in which the LED chip and the bonding wire electrically connected to the LED chip are sealed inside the reflector, and the sealing portion are arranged to overlap. A molded product formed by molding together with a transparent material a phosphor that emits light of a color different from the emission color of the LED chip by being excited by the light emitted from the LED chip and on the mounting surface side of the mounting substrate. A dome-shaped color conversion member that covers the lens and is disposed in a form in which an air layer is formed between the light emitting surface of the lens and a sealing portion Is formed by filling a silicone resin inside the Furekuta, the lens is a light-emitting device characterized by comprising a convex lens.
JP2005272868A 2005-09-20 2005-09-20 Light emitting device Active JP4820135B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005272868A JP4820135B2 (en) 2005-09-20 2005-09-20 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005272868A JP4820135B2 (en) 2005-09-20 2005-09-20 Light emitting device

Publications (2)

Publication Number Publication Date
JP2007088091A true JP2007088091A (en) 2007-04-05
JP4820135B2 JP4820135B2 (en) 2011-11-24

Family

ID=37974802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005272868A Active JP4820135B2 (en) 2005-09-20 2005-09-20 Light emitting device

Country Status (1)

Country Link
JP (1) JP4820135B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2197047A1 (en) * 2007-08-28 2010-06-16 Panasonic Electric Works Co., Ltd Light emitting device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000156526A (en) * 1998-11-20 2000-06-06 Asahi Rubber:Kk Lighting device
JP2000208818A (en) * 1999-01-13 2000-07-28 Asahi Rubber:Kk Light emitting device
JP2003318448A (en) * 2002-02-19 2003-11-07 Nichia Chem Ind Ltd Light emitting device and its forming method
JP2004343149A (en) * 2004-08-31 2004-12-02 Sharp Corp Light emitting element and method of fabricating the same
JP2005050827A (en) * 2004-10-22 2005-02-24 Matsushita Electric Works Ltd Process for manufacturing illumination light source and illumination light source
JP2005158949A (en) * 2003-11-25 2005-06-16 Matsushita Electric Works Ltd Light emitting device
JP2005183727A (en) * 2003-12-19 2005-07-07 Kyocera Corp Light emitting apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000156526A (en) * 1998-11-20 2000-06-06 Asahi Rubber:Kk Lighting device
JP2000208818A (en) * 1999-01-13 2000-07-28 Asahi Rubber:Kk Light emitting device
JP2003318448A (en) * 2002-02-19 2003-11-07 Nichia Chem Ind Ltd Light emitting device and its forming method
JP2005158949A (en) * 2003-11-25 2005-06-16 Matsushita Electric Works Ltd Light emitting device
JP2005183727A (en) * 2003-12-19 2005-07-07 Kyocera Corp Light emitting apparatus
JP2004343149A (en) * 2004-08-31 2004-12-02 Sharp Corp Light emitting element and method of fabricating the same
JP2005050827A (en) * 2004-10-22 2005-02-24 Matsushita Electric Works Ltd Process for manufacturing illumination light source and illumination light source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2197047A1 (en) * 2007-08-28 2010-06-16 Panasonic Electric Works Co., Ltd Light emitting device
EP2197047A4 (en) * 2007-08-28 2014-07-09 Panasonic Corp Light emitting device

Also Published As

Publication number Publication date
JP4820135B2 (en) 2011-11-24

Similar Documents

Publication Publication Date Title
KR100985452B1 (en) Light emitting device
US8278678B2 (en) Light emitting device
JP4442536B2 (en) LED lighting device
JP4820133B2 (en) Light emitting device
JP2007088093A (en) Light-emitting device
JP3941826B2 (en) LED luminaire manufacturing method
JP4293216B2 (en) Light emitting device
JP4925346B2 (en) Light emitting device
JP2007088082A (en) Light-emitting device
JP3918871B2 (en) Light emitting device
JP4742761B2 (en) Light emitting device
JP4765507B2 (en) Light emitting device
JP4820135B2 (en) Light emitting device
JP3952075B2 (en) Light emitting device
JP3963188B2 (en) Light emitting device
JP2007088100A (en) Luminaire
JP4556815B2 (en) Light emitting device
JP2007088095A (en) Light-emitting device
JP3963187B2 (en) Light emitting device
JP2007088075A (en) Light-emitting device
JP2007088094A (en) Light-emitting device
JP3948483B2 (en) Light emitting device
JP2007088073A (en) Light-emitting device
JP2007088097A (en) Light-emitting device
JP2007088098A (en) Light-emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080507

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091201

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091215

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100215

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100601

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100831

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100901

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20100907

A912 Removal of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20101022

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110902

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140909

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 4820135

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140909

Year of fee payment: 3