JP2005039007A - Module with built-in electronic component - Google Patents

Module with built-in electronic component Download PDF

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Publication number
JP2005039007A
JP2005039007A JP2003199254A JP2003199254A JP2005039007A JP 2005039007 A JP2005039007 A JP 2005039007A JP 2003199254 A JP2003199254 A JP 2003199254A JP 2003199254 A JP2003199254 A JP 2003199254A JP 2005039007 A JP2005039007 A JP 2005039007A
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Japan
Prior art keywords
electronic component
solder
wiring board
module
built
Prior art date
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JP2003199254A
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Japanese (ja)
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JP4341321B2 (en
Inventor
Eiji Kawamoto
英司 川本
Masaaki Hayama
雅昭 葉山
Masaaki Katsumata
雅昭 勝又
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2003199254A priority Critical patent/JP4341321B2/en
Priority to US10/500,539 priority patent/US6998532B2/en
Priority to PCT/JP2003/016427 priority patent/WO2004060034A1/en
Priority to CN2003801001779A priority patent/CN1692685B/en
Publication of JP2005039007A publication Critical patent/JP2005039007A/en
Application granted granted Critical
Publication of JP4341321B2 publication Critical patent/JP4341321B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that, at the time of reflow connection with a mother board, solder is remelt, causing short-circuiting between the electrodes in a conventional module with built-in electronic components which uses solder for mounting the electronic components and is molded with resin. <P>SOLUTION: The module 1 with built-in electronic components includes at least one electronic component 4 and a wiring board 2 having at least one interconnection layer. The electronic component 4 is connected to electrodes 3 of the wiring board 2 by solder 5, and all these are covered with insulating resin 7, and an electromagnetic shield layer 15 which consists of a metal plating film is formed on the surface of the insulating resin 7. In such module 1 with built-in electronic components, S<SB>C</SB>&ge;S<SB>S</SB>is satisfied, where S<SB>C</SB>is an interval between electrodes 6 of the electronic component 4 and S<SB>S</SB>is an interval between the electrodes 3 of the wiring board 2 for mounting the electronic component. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は電子部品内蔵モジュールに関し、特に、配線基板の上部に電子部品が配置され、これを絶縁樹脂で覆った電子部品内蔵モジュールに関するものである。
【０００２】
【従来の技術】
近年、基板上に複数の電子部品を搭載してなる小型の電子機器が急速に普及してきた。この種の電子機器は従来、電磁界ノイズからの保護の目的で金属ケースで部品を覆ったものや金属ケースに収納されたものが存在していた。また、これら金属ケースに代わる技術として最近では絶縁樹脂でモールドされた電子部品内蔵モジュールが提案されている。
【０００３】
図５に従来の絶縁樹脂でモールドされた電子部品内蔵モジュールを示す。
【０００４】
図５に示すように配線パターン１１１や電極１０３を配線基板１０２の表面に形成し、その表面をソルダーレジスト１１６で覆っている。さらに、配線基板１０２の内部はインナービア１１０、配線パターン１１２が設けられている。配線基板１０２の裏面には裏面電極１１３、はんだ１１４が設けられている。そして、電子部品１０４の電極１０６と配線基板１０２の電極１０３とをはんだ１０５で接続した後、電子部品１０４を包み込むように配線基板１０２の表面上を絶縁樹脂１０７で覆い、表層に金属めっき膜１１５による電磁界シールド層を設けた電子部品内蔵モジュール１００である。
【０００５】
なお、この出願に関する先行技術文献情報としては、例えば、特許文献１が知られている。
【０００６】
【特許文献１】
特開２００１−１６８４９３号公報
【０００７】
【発明が解決しようとする課題】
しかしながら、従来の絶縁樹脂１０７でモールドされた電子部品内蔵モジュール１００では、はんだ実装により電子部品１０４を内蔵する場合、通常の表面実装方式における電子部品と配線基板の電極構造の位置関係を、そのまま内蔵する電子部品のはんだ実装構造へ流用している。この通常の表面実装方式における電子部品と配線基板の電極構造の位置関係は、図６（ａ）の電子部品１０４の正面図に示すように電子部品１０４の電極１０６の間隔をＳＣ１、図６（ｂ）の配線基板１０２の断面図に示すように配線基板１０２の電極１０３の間隔をＳＳ１とすると、特に０６０３サイズ及び１００５サイズの電子部品１０４に対しては、各電子部品製造メーカー（例えば、（株）村田製作所、京セラ（株）等）は、リフローによるはんだ実装の場合、ＳＣ１＜ＳＳ１を推奨している。そして、実際に電子部品１０４を配線基板１０２にはんだ実装する場合には、電子部品１０４の電極１０６間でのショートを避けるため、できるだけ配線基板１０２の電極間隔を広く設計し、推奨通りＳＣ１＜ＳＳ１としている。この電極構造の位置関係を、電子部品内蔵モジュールにおける内蔵する電子部品１０４のはんだ実装に用いた場合、電子部品内蔵モジュールは、後にリフローによりマザー基板上へはんだを用いて実装されるのであるが、その際、電子部品内臓モジュール内のはんだ１０５は再溶融し、この時同時にはんだ１０５は体積膨張を伴う。電極の位置関係がＳＣ１＜ＳＳ１であると、電子部品１０４の下面側において、はんだ１０５が鋭角構造となるため、はんだ１０５の体積膨張による応力により、電子部品１０４の下面と配線基板１０２との間に存在する絶縁樹脂１０７に対して、電子部品１０４の下面と絶縁樹脂１０７を引き剥がすような力が働く。そのため、電子部品１０４と絶縁樹脂１０７の界面にはんだ１０５が流出しやすくなり、電極間ショートを引き起こすこととなる。
【０００８】
本発明は上記従来の問題を解決し、接続信頼性及び量産性に優れた電子部品内蔵モジュールを提供することを目的としている。
【０００９】
【課題を解決するための手段】
上記課題を解決するために本発明の請求項１に記載の発明は、少なくとも１つ以上の電子部品と、少なくとも一層以上の配線層を有する配線基板と、前記電子部品を前記配線基板の電極とはんだで接続しこれらを絶縁樹脂で覆い、前記絶縁樹脂の表面に金属めっき膜による電磁界シールド層を形成した電子部品内蔵モジュールにおいて、前記電子部品の電極間隔をＳＣ、前記電子部品実装用の前記配線基板の電極間隔をＳｓとするとき、ＳＣ≧ＳＳの関係を満足する電子部品内蔵モジュールとしたものであり、電子部品内蔵モジュール内のはんだが再溶融した際に、溶融による体積膨張で発生した応力が、電子部品と配線基板間に存在する絶縁樹脂を電子部品側に押しつけるように作用するため、電子部品と絶縁樹脂との間にはんだの流出が起こらないという作用を有する。
【００１０】
本発明の請求項２に記載の発明は、電子部品の電極と接続しているはんだの形状が前記電子部品の下面の電極の内側部分において９０°以上の角度を有する請求項１に記載の電子部品内蔵モジュールとしたものであり、電子部品内蔵モジュール内のはんだが再溶融した際に、溶融による体積膨張で発生した応力が、電子部品と配線基板間に存在する絶縁樹脂を電子部品側に押しつけるように作用するため、電子部品と絶縁樹脂との間にはんだの流出が起こらないという作用を有する。
【００１１】
本発明の請求項３に記載の発明は、配線基板の表裏面にソルダーレジストを設けるとともに、電子部品の直下の配線基板の電極以外の部分にソルダーレジスト未形成部を設けた請求項１または２に記載の電子部品内蔵モジュールとしたものであり、電子部品と配線基板の間に確実に絶縁樹脂を充填することができ、はんだの流出する空間を無くすことができるという作用を有する。
【００１２】
本発明の請求項４に記載の発明は、配線基板の表裏面にソルダーレジストを設けるとともに、前記配線基板の表面は電極の周囲にのみソルダーレジストを形成した請求項１または２に記載の電子部品内蔵モジュールとしたものであり、電子部品と配線基板の間に確実に絶縁樹脂を充填することができ、はんだの流出する空間を無くすことができるという作用を有する。
【００１３】
【発明の実施の形態】
以下、本発明の一実施の形態について説明する。
【００１４】
（実施の形態１）
図１は本発明の実施の形態１による電子部品内蔵モジュールの断面図を示す。図２は本発明の実施の形態１による電子部品の電極構造及び配線基板の電極構造を示す。
【００１５】
図１において、配線基板２は、表面の電極３や配線パターン１２やインナービア１０、裏面に裏面電極１３が形成された多層配線基板である。
【００１６】
電極３，１３や配線パターン１２は、電気導電性を有する物質から成り、例えば、Ｃｕ箔や導電性樹脂組成物から成る。本発明においてはＣｕ箔を用いている。インナービア１０は、例えば熱硬化性の導電性物質から成る。熱硬化性の導電性物質としては、例えば、金属粒子と熱硬化性樹脂とを混合した導電性樹脂組成物を用いることができる。金属粒子としては、Ａｕ，ＡｇまたはＣｕなどを用いることができる。Ａｕ，ＡｇまたはＣｕは導電性が高いために好ましく、Ｃｕは導電性が高くマイグレーションも少なく、また、低コストであるため特に好ましい。熱硬化性樹脂としては、例えば、エポキシ樹脂、フェノール樹脂またはシアネート樹脂を用いることができる。エポキシ樹脂は耐熱性が高いために特に好ましい。
【００１７】
この配線基板２上の所定の位置にはんだ５用いて両端に電極６を設けた電子部品４を実装している。電子部品４は、例えば、能動部品および受動部品から成る。能動部品としては、例えば、トランジスタ、ＩＣ、ＬＳＩなどの半導体素子が用いられる。受動部品としては、抵抗、コンデンサ、インダクタ、振動子及びフィルタ等の面実装型部品が用いられる。
【００１８】
はんだ５にはＰｂ−Ｓｎ系の共晶はんだやＰｂフリーはんだ（例えばＳｎ−Ａｇ−Ｃｕ系、Ａｕ−Ｓｎ系またはＳｎ−Ｚｎ系）を用いることができるが、何れの場合も融点が２３０℃以下であって非耐熱性部品であっても使用することが可能である。また、電子部品４を実装するためのはんだ５と電子部品内蔵モジュール１をマザー基板（図示せず）へ実装するためのはんだ１４は同一材料であっても構わないし、異なる材料を用いても構わない。しかしながら、近年の環境問題への配慮を考えるとＰｂフリーはんだを用いる方が望ましい。
【００１９】
絶縁樹脂７は電子部品４を完全に覆い、且つ電子部品４と配線基板２の間にも完全に入り込むように形成されている。絶縁樹脂７は、無機フィラーと熱硬化性樹脂とを含む混合物からなる。無機フィラーには、たとえば、Ａｌ２Ｏ３，ＭｇＯ，ＢＮ，ＡｌＮ，ＳｉＯ２およびＢａＴｉＯ３などを用いることができる。無機フィラーの配合比率は、５０重量％〜９５重量％の範囲内であることが重要である。この範囲内において絶縁樹脂７を電子部品４の高さ以上に肉厚（例えば１ｍｍ）に形成することができるのであるが、この範囲以下になると絶縁樹脂７の流動性が大きくなり、肉厚に形状を維持することができない。また、９５重量％以上の無機フィラーを含有して絶縁樹脂７を形成することは不可能である。また、無機フィラーの粒径は配線基板２と電子部品４の間隔より小さい粒径とすることが重要である。粒径を小さくすることで電子部品４と配線基板２の間に絶縁樹脂７を充填することが可能となる。また、絶縁樹脂７に含有する熱硬化性樹脂は、エポキシ樹脂、フェノール樹脂、またはシアネート樹脂が好ましい。エポキシ樹脂は、耐熱性が高いために特に好ましい。
【００２０】
また、絶縁樹脂７の表層にめっきによる金属膜を形成し、電磁界シールド層１５として作用させている。金属めっき膜による電磁界シールド層１５は、Ａｕ，Ａｇ，Ｃｕ，Ｎｉ，Ｃｒ，Ｚｎ，Ｔｉ，Ａｌ等の材料を少なくとも１種類以上用いて形成している。
【００２１】
図１及び図２に示すように、本発明の電子部品内蔵モジュール１においては、電子部品４の電極６の間隔をＳＣ、配線基板２の電極３の間隔をＳＳとする時、ＳＣ≧ＳＳとなる関係を満足させることが重要である。これは電子部品内蔵モジュール１内のはんだ５が再溶融した際に、はんだ５が溶融による体積膨張で発生した応力が、電子部品４と配線基板２との間に存在する絶縁樹脂７を電子部品４に押しつけるように作用するため、電子部品４と絶縁樹脂７との間にはんだの流出が起こらず、はんだ５の再溶融による電極間ショートが発生しない。
【００２２】
更に、電子部品４の電極６と接続しているはんだ５の形状が、電子部品４の下面の電極６の内側部分における角度αが９０°以上の角度（鈍角）とすることが重要である。
【００２３】
この関係を満足させることで、はんだ５の再溶融時の膨張に対して、電子部品４の下に存在するはんだ５が、電子部品４と配線基板２の間に存在する絶縁樹脂７を電子部品４側へ押しつけるように膨張するため、電子部品４と絶縁樹脂７の界面は確実に密着することとなり、はんだ５が流出すべき経路が遮断されることになる。従って、電子部品４と絶縁樹脂７の界面へのはんだ５の流出は起こらないのである。また、逆に、はんだ５と配線基板２の電極３との接続部において、はんだ５の角度βが９０°以下（鋭角）の形状となる部分が存在することになる。しかしながら、絶縁樹脂７と配線基板２とは、互いに樹脂同士であるため、絶縁樹脂７を硬化させる際に配線基板２と絶縁樹脂７を強固に接着させることができる。そのため、はんだ５の膨張による応力に対しても、十分接着し続けることが可能で、両者の界面へのはんだ５の流出は発生しない。
【００２４】
すなわち、電子部品４と絶縁樹脂７の界面の接着力が弱いためにはんだ５の流出はこの電子部品４と絶縁樹脂７の界面で起こるのである。
【００２５】
そのため、電子部品４の下側ではんだ５が鋭角にならない構造にすることが重要である。
【００２６】
ただし、いずれの場合においても、はんだ５の膨張を緩和するために絶縁樹脂７には曲げ弾性率が２０ＧＰａの低弾性率材料でなければならない。
【００２７】
以上に示すように、本発明の実施の形態１においては電子部品４の電極間隔ＳＣと配線基板２の電極間隔ＳＳとの関係をＳＣ≧ＳＳとし、更に、電子部品４の電極６と接続しているはんだ５の形状が、電子部品４の下面の電極６の内側部分において９０°以上の角度とすることで、電子部品内蔵モジュール内のはんだ５が再溶融しても、はんだ５の膨張がはんだ自らの流出経路（電子部品下側の絶縁樹脂との界面）を遮断してはんだ流出を回避することが可能となる。
【００２８】
（実施の形態２）
図３は、本発明の実施の形態２による電子部品内蔵モジュールの断面図を示し、実施の形態１と同一の構造については、同一番号を付与して説明を省略する。
【００２９】
図３に示すように、実施の形態１と同様に電子部品４の電極６の間隔ＳＣと配線基板２の電極３の間隔ＳＳとの関係をＳＣ≧ＳＳとし、更に、電子部品４の電極６と接続しているはんだ５の形状が電子部品４の下面の電極６の内側部分において角度αを９０°以上の角度としている。そして、配線基板２の上面にソルダーレジスト１７を形成するとともに、電子部品４の真下に位置する配線基板２上の電極３以外の部分にソルダーレジスト１７の未形成部分を設けている。こうすることで、電子部品４と配線基板２との間に確実に空間を形成することができる。従ってこの空間により、容易に電子部品４の真下へ絶縁樹脂７を充填することが可能となる。
【００３０】
更に、配線基板２側に形成されている角度βが鋭角な形状のはんだ５の構造に対して再溶融によりはんだ５が膨張してもこのソルダーレジスト１７がはんだ５の流出に対する防止壁の役割を果たすことができる。
【００３１】
以上のような構造を有するソルダーレジスト１７の存在により、絶縁樹脂７を確実に電子部品４と配線基板２間に充填することができるとともに、はんだ流出防止壁としての役割を果たすため、はんだ５の再溶融時の膨張に対しても、電子部品４と配線基板２との間のはんだ５の流出によるショート不良を防止することが可能である。
【００３２】
（実施の形態３）
図４は、本発明の実施の形態３による電子部品内蔵モジュールの断面図を示し、実施の形態１と同一の構造については、同一番号を付与して説明を省略する。
【００３３】
図４に示すように、実施の形態１と同様に電子部品４の電極６の間隔ＳＣと配線基板２の電極３の間隔ＳＳとの関係をＳＣ≧ＳＳとし、更に、電子部品４の電極６と接続しているはんだ５の形状が電子部品４の下面の電極６の内側部分において角度αが９０°以上の角度としている。
【００３４】
そして、電極３の周囲にのみソルダーレジスト２７を形成している。このソルダーレジスト２７は電子部品４を配線基板２上にはんだ５で実装する際に、はんだ５の流出によるショート不良を防止する効果を有するとともに、電極３の周囲にのみ存在しているため、電子部品４と配線基板２との空間を広くすることが可能となる。
【００３５】
こうすることで、電子部品４と配線基板２との間に確実に空間を形成することができる。従ってこの空間により、容易に電子部品４の真下へ絶縁樹脂７を充填することが可能となる。
【００３６】
更に、配線基板２側に形成されている角度βが鋭角形状のはんだ５の構造に対してはんだ５が再溶融し膨張してもこのソルダーレジスト２７がはんだ５の流出に対する防止壁の役割を果たすことができる。
【００３７】
以上のような構造を有するソルダーレジスト２７の存在により、絶縁樹脂７を確実に電子部品４と配線基板２間に充填することができるとともに、はんだ流出防止壁としての役割を果たすため、はんだ５の再溶融時の膨張に対しても、電子部品４と配線基板２との間のはんだ５の流出によるショート不良を防止することが可能である。
【００３８】
【発明の効果】
以上のように本発明によれば、電子部品の電極間隔ＳＣと配線基板の電極間隔ＳＳとの関係をＳＣ≧ＳＳとし、更に、電子部品の電極と接続しているはんだの形状を、電子部品の下面の電極の内側部分において角度αを９０°以上の角度とすることで、電子部品内蔵モジュール内のはんだが再溶融して体積膨張が起こっても、電子部品と絶縁樹脂の界面にはんだが流出することが無いため、はんだショート不良が起こらず良好な接続信頼性を確保することができるものである。
【図面の簡単な説明】
【図１】本発明の実施の形態１による電子部品内蔵モジュールの断面図
【図２】（ａ）本発明の電子部品の正面図
（ｂ）本発明の電子部品内蔵モジュールに使用している配線基板の断面図
【図３】本発明の実施の形態２による電子部品内蔵モジュールの断面図
【図４】本発明の実施の形態３による電子部品内蔵モジュールの断面図
【図５】従来の電子部品内蔵モジュールの断面図
【図６】（ａ）従来の電子部品の正面図
（ｂ）従来の電子部品内蔵モジュールに使用している配線基板の断面図
【符号の説明】
１ 電子部品内蔵モジュール
２ 配線基板
３ 電極
４ 電子部品
５ はんだ
６ 電極
７ 絶縁樹脂
１０ インナービア
１２ 配線パターン
１３ 裏面電極
１４ はんだ
１５ シールド層
１６ ソルダーレジスト[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic component built-in module, and more particularly to an electronic component built-in module in which an electronic component is disposed on an upper part of a wiring board and covered with an insulating resin.
[0002]
[Prior art]
In recent years, small electronic devices in which a plurality of electronic components are mounted on a substrate have rapidly spread. Conventionally, there are electronic devices of this type in which components are covered with a metal case or stored in a metal case for the purpose of protection from electromagnetic field noise. In addition, recently, an electronic component built-in module molded with an insulating resin has been proposed as a technique to replace these metal cases.
[0003]
FIG. 5 shows a conventional electronic component built-in module molded with an insulating resin.
[0004]
As shown in FIG. 5, a wiring pattern 111 and an electrode 103 are formed on the surface of the wiring substrate 102, and the surface is covered with a solder resist 116. Furthermore, an inner via 110 and a wiring pattern 112 are provided inside the wiring substrate 102. A back electrode 113 and solder 114 are provided on the back surface of the wiring substrate 102. Then, after connecting the electrode 106 of the electronic component 104 and the electrode 103 of the wiring board 102 with the solder 105, the surface of the wiring board 102 is covered with an insulating resin 107 so as to wrap the electronic component 104, and the metal plating film 115 is formed on the surface layer. This is an electronic component built-in module 100 provided with an electromagnetic field shielding layer.
[0005]
As prior art document information relating to this application, for example, Patent Document 1 is known.
[0006]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-168493
[Problems to be solved by the invention]
However, in the electronic component built-in module 100 molded with the conventional insulating resin 107, when the electronic component 104 is built in by solder mounting, the positional relationship between the electronic component and the electrode structure of the wiring board in the normal surface mounting method is incorporated as it is. It is diverted to solder mounting structures for electronic components. As shown in the front view of the electronic component 104 in FIG. 6A, the positional relationship between the electronic component and the electrode structure of the wiring board in this normal surface mounting method is such that the distance between the electrodes 106 of the electronic component 104 is S C1 . As shown in the cross-sectional view of the wiring board 102 in (b), when the interval between the electrodes 103 of the wiring board 102 is S S1 , especially for the electronic components 104 of 0603 size and 1005 size, , Murata Manufacturing Co., Ltd., Kyocera Corporation, etc.) recommends S C1 <S S1 in the case of solder mounting by reflow. When the actually solder mounting the electronic component 104 on the wiring board 102, in order to avoid a short circuit between the electrodes 106 of the electronic component 104, as far as possible to widely design the electrode spacing of the wiring board 102, as recommended S C1 < S S1 is set. When this positional relationship of the electrode structure is used for solder mounting of the electronic component 104 incorporated in the electronic component built-in module, the electronic component built-in module is later mounted on the mother board by reflow using solder. At this time, the solder 105 in the electronic component built-in module is remelted, and at the same time, the solder 105 is accompanied by volume expansion. If the positional relationship of the electrodes is S C1 <S S1 , the solder 105 has an acute angle structure on the lower surface side of the electronic component 104, and therefore, the lower surface of the electronic component 104 and the wiring substrate 102 are A force that peels off the lower surface of the electronic component 104 and the insulating resin 107 acts on the insulating resin 107 existing between them. Therefore, the solder 105 is likely to flow out to the interface between the electronic component 104 and the insulating resin 107, causing a short circuit between the electrodes.
[0008]
An object of the present invention is to solve the above-described conventional problems and provide an electronic component built-in module excellent in connection reliability and mass productivity.
[0009]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the invention according to claim 1 of the present invention is characterized in that at least one electronic component, a wiring substrate having at least one wiring layer, and the electronic component as an electrode of the wiring substrate. In an electronic component built-in module in which a soldering connection is made and these are covered with an insulating resin, and an electromagnetic field shielding layer made of a metal plating film is formed on the surface of the insulating resin, the electrode interval of the electronic component is set to S C , When the electrode interval of the wiring board is Ss, the module has a built-in electronic component that satisfies the relationship of S C ≧ S S. When the solder in the built-in electronic component module is remelted, the volume expansion due to melting Since the stress generated in this action acts to press the insulating resin existing between the electronic component and the wiring board against the electronic component, the flow of solder between the electronic component and the insulating resin It has an effect that does not occur.
[0010]
According to a second aspect of the present invention, the shape of the solder connected to the electrode of the electronic component has an angle of 90 ° or more in the inner portion of the electrode on the lower surface of the electronic component. This is a module with a built-in component. When the solder in the module with a built-in electronic component is remelted, the stress generated by the volume expansion caused by the fusion presses the insulating resin existing between the electronic component and the wiring board against the electronic component. Therefore, the solder does not flow out between the electronic component and the insulating resin.
[0011]
In the invention according to claim 3 of the present invention, a solder resist is provided on the front and back surfaces of the wiring board, and a solder resist non-formed portion is provided in a portion other than the electrode of the wiring board immediately below the electronic component. The electronic component built-in module described in 1) has an effect that the insulating resin can be reliably filled between the electronic component and the wiring board, and the space where the solder flows out can be eliminated.
[0012]
According to a fourth aspect of the present invention, there is provided the electronic component according to the first or second aspect, wherein a solder resist is provided on the front and back surfaces of the wiring board, and the surface of the wiring board is formed with a solder resist only around the electrodes. This is a built-in module, and has an effect that the insulating resin can be reliably filled between the electronic component and the wiring board, and the space where the solder flows out can be eliminated.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described.
[0014]
(Embodiment 1)
FIG. 1 is a sectional view of an electronic component built-in module according to Embodiment 1 of the present invention. FIG. 2 shows an electrode structure of an electronic component and an electrode structure of a wiring board according to Embodiment 1 of the present invention.
[0015]
In FIG. 1, a wiring board 2 is a multilayer wiring board in which a front electrode 3, a wiring pattern 12, an inner via 10, and a back electrode 13 are formed on the back surface.
[0016]
The electrodes 3 and 13 and the wiring pattern 12 are made of a material having electrical conductivity, for example, Cu foil or a conductive resin composition. In the present invention, Cu foil is used. The inner via 10 is made of, for example, a thermosetting conductive material. As the thermosetting conductive material, for example, a conductive resin composition in which metal particles and a thermosetting resin are mixed can be used. As the metal particles, Au, Ag, Cu, or the like can be used. Au, Ag, or Cu is preferable because of its high conductivity, and Cu is particularly preferable because of its high conductivity, low migration, and low cost. As the thermosetting resin, for example, an epoxy resin, a phenol resin, or a cyanate resin can be used. Epoxy resins are particularly preferred because of their high heat resistance.
[0017]
An electronic component 4 provided with electrodes 6 at both ends is mounted using solder 5 at a predetermined position on the wiring board 2. The electronic component 4 includes, for example, an active component and a passive component. For example, a semiconductor element such as a transistor, IC, or LSI is used as the active component. As the passive components, surface mount components such as resistors, capacitors, inductors, vibrators, and filters are used.
[0018]
Pb—Sn eutectic solder or Pb-free solder (for example, Sn—Ag—Cu, Au—Sn, or Sn—Zn) can be used as the solder 5, but in any case, the melting point is 230 ° C. Even the following non-heat resistant parts can be used. The solder 5 for mounting the electronic component 4 and the solder 14 for mounting the electronic component built-in module 1 on the mother board (not shown) may be the same material or different materials. Absent. However, in consideration of recent environmental problems, it is preferable to use Pb-free solder.
[0019]
The insulating resin 7 is formed so as to completely cover the electronic component 4 and completely enter between the electronic component 4 and the wiring board 2. The insulating resin 7 is made of a mixture containing an inorganic filler and a thermosetting resin. As the inorganic filler, for example, Al 2 O 3 , MgO, BN, AlN, SiO 2 and BaTiO 3 can be used. It is important that the blending ratio of the inorganic filler is in the range of 50% by weight to 95% by weight. Within this range, the insulating resin 7 can be formed with a thickness (for example, 1 mm) that is higher than the height of the electronic component 4. However, when the thickness is less than this range, the fluidity of the insulating resin 7 increases and the thickness increases. The shape cannot be maintained. Further, it is impossible to form the insulating resin 7 containing 95% by weight or more of an inorganic filler. It is important that the particle size of the inorganic filler is smaller than the distance between the wiring board 2 and the electronic component 4. By reducing the particle size, the insulating resin 7 can be filled between the electronic component 4 and the wiring board 2. Moreover, the thermosetting resin contained in the insulating resin 7 is preferably an epoxy resin, a phenol resin, or a cyanate resin. Epoxy resins are particularly preferred because of their high heat resistance.
[0020]
Further, a metal film by plating is formed on the surface layer of the insulating resin 7 to act as the electromagnetic field shield layer 15. The electromagnetic field shielding layer 15 made of a metal plating film is formed using at least one material such as Au, Ag, Cu, Ni, Cr, Zn, Ti, and Al.
[0021]
As shown in FIGS. 1 and 2, in the electronic component built-in module 1 of the present invention, when the interval between the electrodes 6 of the electronic component 4 is S C and the interval between the electrodes 3 of the wiring board 2 is S S , S C It is important to satisfy the relationship of ≧ S S. This is because when the solder 5 in the electronic component built-in module 1 is remelted, the stress generated by the volume expansion due to the melting of the solder 5 causes the insulating resin 7 present between the electronic component 4 and the wiring board 2 to 4, the solder does not flow out between the electronic component 4 and the insulating resin 7, and the short circuit between the electrodes due to remelting of the solder 5 does not occur.
[0022]
Further, it is important that the shape of the solder 5 connected to the electrode 6 of the electronic component 4 is an angle (obtuse angle) of 90 ° or more at the inner portion of the electrode 6 on the lower surface of the electronic component 4.
[0023]
By satisfying this relationship, the solder 5 existing under the electronic component 4 replaces the insulating resin 7 existing between the electronic component 4 and the wiring board 2 against the expansion when the solder 5 is remelted. Since it expands so as to press against the side 4, the interface between the electronic component 4 and the insulating resin 7 is surely adhered, and the path through which the solder 5 should flow out is blocked. Therefore, the solder 5 does not flow out to the interface between the electronic component 4 and the insulating resin 7. Conversely, there is a portion where the angle β of the solder 5 is 90 ° or less (acute angle) at the connection portion between the solder 5 and the electrode 3 of the wiring board 2. However, since the insulating resin 7 and the wiring substrate 2 are made of resin, the wiring substrate 2 and the insulating resin 7 can be firmly bonded when the insulating resin 7 is cured. Therefore, it is possible to continue to sufficiently adhere to the stress due to the expansion of the solder 5, and the outflow of the solder 5 to the interface between the two does not occur.
[0024]
That is, since the adhesive force at the interface between the electronic component 4 and the insulating resin 7 is weak, the solder 5 flows out at the interface between the electronic component 4 and the insulating resin 7.
[0025]
Therefore, it is important to have a structure in which the solder 5 does not form an acute angle below the electronic component 4.
[0026]
However, in any case, the insulating resin 7 must be a low elastic modulus material having a bending elastic modulus of 20 GPa in order to alleviate the expansion of the solder 5.
[0027]
As shown above, the relationship between the electrode spacing S S of the electrode spacing S C between the wiring board 2 of the electronic component 4 in the first embodiment of the present invention the S C ≧ S S, further, the electronic component 4 electrodes 6, the shape of the solder 5 connected to the inner part of the electrode 6 on the lower surface of the electronic component 4 is set to an angle of 90 ° or more, so that even if the solder 5 in the electronic component built-in module is remelted, the solder The expansion of 5 can block the solder's own outflow path (interface with the insulating resin below the electronic component) and avoid the solder outflow.
[0028]
(Embodiment 2)
FIG. 3 shows a cross-sectional view of the electronic component built-in module according to the second embodiment of the present invention, and the same structure as that of the first embodiment is given the same number and the description thereof is omitted.
[0029]
As shown in FIG. 3, as in the first embodiment, the relationship between the distance S C between the electrodes 6 of the electronic component 4 and the distance S S between the electrodes 3 on the wiring board 2 is S C ≧ S S. The shape of the solder 5 connected to the four electrodes 6 has an angle α of 90 ° or more in the inner portion of the electrode 6 on the lower surface of the electronic component 4. Then, a solder resist 17 is formed on the upper surface of the wiring board 2, and a portion where the solder resist 17 is not formed is provided in a portion other than the electrode 3 on the wiring board 2 located immediately below the electronic component 4. By so doing, a space can be reliably formed between the electronic component 4 and the wiring board 2. Therefore, this space makes it possible to easily fill the insulating resin 7 directly below the electronic component 4.
[0030]
Furthermore, even if the solder 5 expands due to remelting with respect to the structure of the solder 5 having an acute angle β formed on the wiring board 2 side, the solder resist 17 serves as a barrier for preventing the solder 5 from flowing out. Can fulfill.
[0031]
The presence of the solder resist 17 having the above-described structure allows the insulating resin 7 to be reliably filled between the electronic component 4 and the wiring board 2 and serves as a solder outflow prevention wall. Even with expansion during remelting, it is possible to prevent a short circuit failure due to the outflow of the solder 5 between the electronic component 4 and the wiring board 2.
[0032]
(Embodiment 3)
FIG. 4 shows a cross-sectional view of the electronic component built-in module according to the third embodiment of the present invention, and the same structure as that of the first embodiment is given the same number and its description is omitted.
[0033]
As shown in FIG. 4, the relation between the distance S C the spacing S S of the electrodes 3 of the wiring board 2 of the electrodes 6 of the same electronic component 4 in the first embodiment and S C ≧ S S, further, the electronic component The shape of the solder 5 connected to the four electrodes 6 is such that the angle α is 90 ° or more in the inner portion of the electrode 6 on the lower surface of the electronic component 4.
[0034]
A solder resist 27 is formed only around the electrode 3. The solder resist 27 has an effect of preventing a short circuit failure due to the outflow of the solder 5 when the electronic component 4 is mounted on the wiring board 2 with the solder 5, and is present only around the electrode 3. It becomes possible to widen the space between the component 4 and the wiring board 2.
[0035]
By so doing, a space can be reliably formed between the electronic component 4 and the wiring board 2. Therefore, this space makes it possible to easily fill the insulating resin 7 directly below the electronic component 4.
[0036]
Furthermore, even if the solder 5 is remelted and expanded with respect to the structure of the solder 5 having an acute angle β formed on the wiring board 2 side, the solder resist 27 serves as a barrier for preventing the solder 5 from flowing out. be able to.
[0037]
Due to the presence of the solder resist 27 having the above-described structure, the insulating resin 7 can be reliably filled between the electronic component 4 and the wiring board 2 and also serves as a solder outflow prevention wall. Even with expansion during remelting, it is possible to prevent a short circuit failure due to the outflow of the solder 5 between the electronic component 4 and the wiring board 2.
[0038]
【The invention's effect】
According to the present invention as described above, the relationship between the electrode spacing S C of the electronic component and the electrode spacing S S of the wiring board and S C ≧ S S, further, the solder connecting the electronic component electrode shape By setting the angle α to 90 ° or more at the inner part of the electrode on the lower surface of the electronic component, even if the solder in the electronic component built-in module is remelted and volume expansion occurs, the electronic component and the insulating resin Since solder does not flow out to the interface, it is possible to ensure good connection reliability without causing a solder short circuit defect.
[Brief description of the drawings]
1 is a cross-sectional view of an electronic component built-in module according to Embodiment 1 of the present invention; FIG. 2 (a) is a front view of the electronic component of the present invention; and (b) is a wiring used in the electronic component built-in module of the present invention. FIG. 3 is a cross-sectional view of an electronic component built-in module according to a second embodiment of the present invention. FIG. 4 is a cross-sectional view of an electronic component built-in module according to a third embodiment of the present invention. Cross-sectional view of built-in module [FIG. 6] (a) Front view of conventional electronic component (b) Cross-sectional view of wiring board used in conventional electronic component built-in module [Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Electronic component built-in module 2 Wiring board 3 Electrode 4 Electronic component 5 Solder 6 Electrode 7 Insulating resin 10 Inner via 12 Wiring pattern 13 Back surface electrode 14 Solder 15 Shield layer 16 Solder resist

Claims (4)

少なくとも１つ以上の電子部品と、少なくとも一層以上の配線層を有する配線基板と、前記電子部品を前記配線基板の電極とはんだで接続しこれらを絶縁樹脂で覆い、前記絶縁樹脂の表面に金属めっき膜による電磁界シールド層を形成した電子部品内蔵モジュールにおいて、前記電子部品の電極間隔をＳｃ、前記電子部品実装用の前記配線基板の電極間隔をＳＳとするとき、ＳＣ≧ＳＳの関係を満足する電子部品内蔵モジュール。At least one or more electronic components, a wiring board having at least one wiring layer, the electrodes of the wiring board are connected with solder, and these are covered with an insulating resin, and the surface of the insulating resin is metal-plated in the electronic component built-in module to form an electromagnetic field shielding layer by layer, the electrode interval of the electronic component Sc, when the said electrode spacing of the wiring substrate S S for electronic component mounting, the relationship of S C ≧ S S Satisfying electronic component built-in module. 電子部品の電極と接続しているはんだの形状が前記電子部品の下面の電極の内側部分において９０°以上の角度を有するようにした請求項１に記載の電子部品内蔵モジュール。2. The electronic component built-in module according to claim 1, wherein the shape of the solder connected to the electrode of the electronic component has an angle of 90 ° or more in an inner portion of the electrode on the lower surface of the electronic component. 配線基板の表裏面にソルダーレジストを設けるとともに、電子部品の直下の配線基板の電極以外の部分にソルダーレジスト未形成部を設けた請求項１または２に記載の電子部品内蔵モジュール。3. The electronic component built-in module according to claim 1, wherein a solder resist is provided on the front and back surfaces of the wiring board, and a solder resist non-formed portion is provided in a portion other than the electrode of the wiring board immediately below the electronic component. 配線基板の表裏面にソルダーレジストを設けるとともに、前記配線基板の表面は電極の周囲にのみソルダーレジストを形成した請求項１または２に記載の電子部品内蔵モジュール。The electronic component built-in module according to claim 1, wherein a solder resist is provided on the front and back surfaces of the wiring board, and a solder resist is formed only on the surface of the wiring board around the electrodes.
JP2003199254A 2002-12-24 2003-07-18 Electronic component built-in module Expired - Lifetime JP4341321B2 (en)

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JP2003199254A JP4341321B2 (en) 2003-07-18 2003-07-18 Electronic component built-in module
US10/500,539 US6998532B2 (en) 2002-12-24 2003-12-22 Electronic component-built-in module
PCT/JP2003/016427 WO2004060034A1 (en) 2002-12-24 2003-12-22 Electronic component-built-in module
CN2003801001779A CN1692685B (en) 2002-12-24 2003-12-22 Module comprising built-in electronic components

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US8053872B1 (en) 2007-06-25 2011-11-08 Rf Micro Devices, Inc. Integrated shield for a no-lead semiconductor device package
US8062930B1 (en) 2005-08-08 2011-11-22 Rf Micro Devices, Inc. Sub-module conformal electromagnetic interference shield
US8061012B2 (en) 2007-06-27 2011-11-22 Rf Micro Devices, Inc. Method of manufacturing a module
JP2013026234A (en) * 2011-07-14 2013-02-04 Mitsubishi Electric Corp Semiconductor device
JP2014110303A (en) * 2012-11-30 2014-06-12 Tdk Corp Mounting structure of chip component and module product using the same
US8835226B2 (en) 2011-02-25 2014-09-16 Rf Micro Devices, Inc. Connection using conductive vias
US8959762B2 (en) 2005-08-08 2015-02-24 Rf Micro Devices, Inc. Method of manufacturing an electronic module
US9137934B2 (en) 2010-08-18 2015-09-15 Rf Micro Devices, Inc. Compartmentalized shielding of selected components
US9627230B2 (en) 2011-02-28 2017-04-18 Qorvo Us, Inc. Methods of forming a microshield on standard QFN package
US9807890B2 (en) 2013-05-31 2017-10-31 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
US11058038B2 (en) 2018-06-28 2021-07-06 Qorvo Us, Inc. Electromagnetic shields for sub-modules
US11114363B2 (en) 2018-12-20 2021-09-07 Qorvo Us, Inc. Electronic package arrangements and related methods
US11127689B2 (en) 2018-06-01 2021-09-21 Qorvo Us, Inc. Segmented shielding using wirebonds
US11515282B2 (en) 2019-05-21 2022-11-29 Qorvo Us, Inc. Electromagnetic shields with bonding wires for sub-modules
US11817239B2 (en) * 2017-12-15 2023-11-14 Qualcomm Incorporated Embedded vertical inductor in laminate stacked substrates

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US8062930B1 (en) 2005-08-08 2011-11-22 Rf Micro Devices, Inc. Sub-module conformal electromagnetic interference shield
US9661739B2 (en) 2005-08-08 2017-05-23 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
US8959762B2 (en) 2005-08-08 2015-02-24 Rf Micro Devices, Inc. Method of manufacturing an electronic module
US8349659B1 (en) 2007-06-25 2013-01-08 Rf Micro Devices, Inc. Integrated shield for a no-lead semiconductor device package
US8053872B1 (en) 2007-06-25 2011-11-08 Rf Micro Devices, Inc. Integrated shield for a no-lead semiconductor device package
US8409658B2 (en) 2007-06-27 2013-04-02 Rf Micro Devices, Inc. Conformal shielding process using flush structures
US8186048B2 (en) 2007-06-27 2012-05-29 Rf Micro Devices, Inc. Conformal shielding process using process gases
US8296941B2 (en) 2007-06-27 2012-10-30 Rf Micro Devices, Inc. Conformal shielding employing segment buildup
US8359739B2 (en) 2007-06-27 2013-01-29 Rf Micro Devices, Inc. Process for manufacturing a module
US8061012B2 (en) 2007-06-27 2011-11-22 Rf Micro Devices, Inc. Method of manufacturing a module
US8434220B2 (en) 2007-06-27 2013-05-07 Rf Micro Devices, Inc. Heat sink formed with conformal shield
US8614899B2 (en) 2007-06-27 2013-12-24 Rf Micro Devices, Inc. Field barrier structures within a conformal shield
US8720051B2 (en) 2007-06-27 2014-05-13 Rf Micro Devices, Inc. Conformal shielding process using process gases
US8220145B2 (en) 2007-06-27 2012-07-17 Rf Micro Devices, Inc. Isolated conformal shielding
US8296938B2 (en) 2007-06-27 2012-10-30 Rf Micro Devices, Inc. Method for forming an electronic module having backside seal
US9137934B2 (en) 2010-08-18 2015-09-15 Rf Micro Devices, Inc. Compartmentalized shielding of selected components
US8835226B2 (en) 2011-02-25 2014-09-16 Rf Micro Devices, Inc. Connection using conductive vias
US9942994B2 (en) 2011-02-25 2018-04-10 Qorvo Us, Inc. Connection using conductive vias
US9420704B2 (en) 2011-02-25 2016-08-16 Qorvo Us, Inc. Connection using conductive vias
US9627230B2 (en) 2011-02-28 2017-04-18 Qorvo Us, Inc. Methods of forming a microshield on standard QFN package
JP2013026234A (en) * 2011-07-14 2013-02-04 Mitsubishi Electric Corp Semiconductor device
JP2014110303A (en) * 2012-11-30 2014-06-12 Tdk Corp Mounting structure of chip component and module product using the same
US9807890B2 (en) 2013-05-31 2017-10-31 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
US11817239B2 (en) * 2017-12-15 2023-11-14 Qualcomm Incorporated Embedded vertical inductor in laminate stacked substrates
US11127689B2 (en) 2018-06-01 2021-09-21 Qorvo Us, Inc. Segmented shielding using wirebonds
US11058038B2 (en) 2018-06-28 2021-07-06 Qorvo Us, Inc. Electromagnetic shields for sub-modules
US11219144B2 (en) 2018-06-28 2022-01-04 Qorvo Us, Inc. Electromagnetic shields for sub-modules
US11114363B2 (en) 2018-12-20 2021-09-07 Qorvo Us, Inc. Electronic package arrangements and related methods
US11515282B2 (en) 2019-05-21 2022-11-29 Qorvo Us, Inc. Electromagnetic shields with bonding wires for sub-modules

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