JP2013026234A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents a short-circuit between two electrodes of a surface-mounted component, thereby soldering the surface-mounted component to a metal pattern.SOLUTION: A semiconductor device according to the present invention includes: a substrate; a first metal pattern that is formed on the substrate; a second metal pattern that is formed on the substrate; a surface-mounted component in which a first electrode is formed at one end and a second electrode is formed at the other end; first solder that fixes the first electrode to the first metal pattern; second solder that fixes the second electrode to the second metal pattern; and molding resin that covers the surface-mounted component and has trenches formed so as to sandwich the surface-mounted component from the outside of the first electrode and the outside of the second electrode.

Description

  The present invention relates to a semiconductor device used for manufacturing an electronic device, for example.

  Patent Document 1 discloses a semiconductor device including a surface mount component (SMD) in which electrodes are formed on one end and the other end, respectively. The electrodes of the surface mount component are joined to the metal pattern on the substrate by solder.

JP 2000-332397 A

  After the electrodes of the surface mount component are soldered to the metal pattern, the surface mount component is covered with mold resin to complete the semiconductor device. The completed semiconductor device is mounted on another substrate by solder reflow. However, this resin reflow may cause the mold resin to peel from the surface-mounted component. Then, the solder may diffuse in the peeled portion, and the two electrodes of the surface mount component may be short-circuited.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device that prevents a short circuit between two electrodes of a surface-mounted component.

  A semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a second metal pattern formed on the substrate, a first electrode formed at one end, and the other end. A surface-mounted component on which a second electrode is formed; a first solder for fixing the first electrode to the first metal pattern; a second solder for fixing the second electrode to the second metal pattern; And a mold resin having a groove formed so as to cover the mounting component and sandwich the surface mounting component from the outside of the first electrode and the outside of the second electrode.

  Another semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a second metal pattern formed on the substrate, and a first electrode formed at one end. A surface-mounted component having a second electrode formed at an end thereof; a first solder that fixes the first electrode and the first metal pattern; a second solder that fixes the second electrode and the second metal pattern; A dummy component formed of a material harder than the surface mount component, fixed to the substrate so as to be adjacent to the surface mount component, the surface mount component, and a mold resin formed so as to cover the dummy component And.

  Another semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a second metal pattern formed on the substrate, and a first electrode formed at one end. A surface-mounted component having a second electrode formed at an end thereof; a first solder that fixes the first electrode and the first metal pattern; a second solder that fixes the second electrode and the second metal pattern; It is characterized by comprising: a mold resin formed so as to cover the surface mount component; and hollow particles formed of a material softer than the mold resin and mixed in the mold resin.

  Another semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a first solder resist applied to a part of the first metal pattern, and the substrate. A formed second metal pattern, a second solder resist applied to a part of the second metal pattern, a surface mount component in which a first electrode is formed at one end and a second electrode is formed at the other end, A first solder for fixing the first electrode and a portion of the first metal pattern not coated with the first solder resist; and a second solder resist for coating the second electrode and the second metal pattern. The second solder for fixing the non-existing portion, the first solder resist, and the mold resin formed so as to be in contact with the second solder resist and to cover the surface mount component.

  Another semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a second metal pattern formed on the substrate, an element forming portion, and the element forming portion. A surface-mount component having a first electrode and a second electrode formed so as to sandwich the first electrode, a first solder for fixing the first electrode and the first metal pattern, and the second electrode and the second metal pattern. A second solder for fixing, a polyimide formed so as to cover at least the element forming portion of the surface mount component, and a mold resin formed so as to cover the polyimide and the surface mount component. Features.

  Another semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a second metal pattern formed on the substrate, an element forming portion, and the element forming portion. A surface-mount component having a first electrode and a second electrode formed so as to sandwich the first electrode, a first solder for fixing the first electrode and the first metal pattern, and the second electrode and the second metal pattern. A second solder to be fixed, a surface of the surface mount component on which the first solder is formed, a surface of the surface mount component on which the second solder is formed, and an upper surface of the surface mount component. A first mold resin, a surface of the surface-mounted component that is not covered with the first mold resin, and a second mold resin formed to cover the first mold resin. The first mold resin is formed of a material that is softer than the second mold resin and has a thermal expansion coefficient closer to that of the surface-mounted component than the second mold resin.

  Another semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a second metal pattern formed on the substrate, an element forming portion, and the element forming portion. A surface-mount component having a first electrode and a second electrode formed so as to sandwich the first electrode, a first solder for fixing the first electrode and the first metal pattern, and the second electrode and the second metal pattern. A second solder to be fixed; a mold resin formed so as to cover the surface-mounted component; and at least an upper surface of the element formation portion, the element formation portion and the mold resin being more than other portions of the element formation portion. And a surface processed part formed so as to improve the adhesion.

  Another semiconductor device according to the present invention includes a substrate, a first metal pattern formed on the substrate, a second metal pattern formed on the substrate, an element forming portion, and the element forming portion. A surface-mount component having a first electrode and a second electrode formed so as to sandwich the first electrode, a first solder for fixing the first electrode and the first metal pattern, and the second electrode and the second metal pattern. A second solder to be fixed; a short prevention portion attached to the surface of the surface mount component so as to extend a creeping distance from the first solder to the second solder; and covering the surface mount component and the short prevention portion And a molded resin formed as described above.

  According to the present invention, a short circuit between two electrodes of a surface mount component can be prevented.

1 is a plan view of a semiconductor device according to a first embodiment of the present invention. It is sectional drawing in the 2-2 broken line of FIG. It is a top view which shows the inside of the semiconductor device which concerns on Embodiment 1 of this invention. It is sectional drawing which shows having mounted the semiconductor device of the comparative example on another board | substrate. It is sectional drawing of the semiconductor device which concerns on Embodiment 2 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 3 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 4 of this invention. It is a figure which shows that a clearance gap is formed between a soldering resist and mold resin. It is sectional drawing of the semiconductor device which concerns on Embodiment 5 of this invention. It is a perspective view which shows the modification of the semiconductor device which concerns on Embodiment 5 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 6 of this invention. FIG. 12 is a cross-sectional arrow view taken along a 12-12 broken line in FIG. 11. It is sectional drawing of the semiconductor device which concerns on Embodiment 7 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 8 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 9 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 10 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 11 of this invention. It is sectional drawing which shows the modification of the semiconductor device which concerns on Embodiment 11 of this invention. It is sectional drawing of the semiconductor device which concerns on Embodiment 12 of this invention.

Embodiment 1 FIG.
FIG. 1 is a plan view of a semiconductor device according to Embodiment 1 of the present invention. The semiconductor device 10 includes a mold resin 12. The mold resin 12 is formed, for example, by mixing a filler in epoxy, phenol, or cyanate. Grooves 14 a and 14 b are formed in the mold resin 12. 2 is a cross-sectional view taken along a broken line 2-2 in FIG. FIG. 2 shows not only the semiconductor device but also “another substrate” on which the semiconductor device is mounted. The semiconductor device 10 includes a substrate 16. A first metal pattern 18 a and a second metal pattern 18 b are formed on the substrate 16.

  The surface mount component 20 is fixed to the first metal pattern 18a and the second metal pattern 18b. A first electrode 20a is formed at one end of the surface mount component 20, and a second electrode 20b is formed at the other end. The first electrode 20a and the second electrode 20b are made of, for example, tin, nickel, silver, or copper. The surface mounted component 20 includes an element forming portion 20c formed so as to be sandwiched between the first electrode 20a and the second electrode 20b. The element forming portion 20c is covered with, for example, barium titanate, titanium oxide, potassium zirconate, or aluminum oxide. The surface mount component 20 is formed with, for example, a chip capacitor, a chip inductor, a chip resistor, a filter, or a thermistor.

  The first electrode 20a and the first metal pattern 18a are fixed with a first solder 22a. The second electrode 20b and the second metal pattern 18b are fixed with a second solder 22b. The mold resin 12 described above is formed so as to cover the surface-mounted component 20. Specifically, the mold resin 12 is in close contact with the substrate 16, the first metal pattern 18 a, the second metal pattern 18 b, the first solder 22 a, the second solder 22 b, and the surface mount component 20. The grooves 14a and 14b are formed so as to sandwich the surface-mounted component 20 from the outside of the first electrode 20a and the outside of the second electrode 20b. These grooves 14 a and 14 b are formed by providing protrusions on a mold used for molding the mold resin 12. The semiconductor device is mounted on another substrate 25 via solder 23.

  FIG. 3 is a plan view showing the inside of the semiconductor device 10 according to the first embodiment of the present invention. In FIG. 3, only the outline and the groove are shown for the mold resin. A plurality of surface mount components 20 are fixed on the substrate. Grooves 14a and 14b are formed so as to sandwich each of the plurality of surface mount components 20 from the outside of the first electrode 20a and the outside of the second electrode 20b. A semiconductor chip 30 is fixed at the center of the substrate 16.

  Here, in order to facilitate understanding of the semiconductor device 10 according to the first embodiment of the present invention, a comparative example will be described. FIG. 4 is a cross-sectional view showing that the semiconductor device of the comparative example is mounted on another substrate. The first electrode 20a of the surface mount component 20 is soldered to the metal pattern 18a, and the second electrode 20b is soldered to the metal pattern 18b. Thereafter, a mold resin 12 is formed. No groove is formed in the mold resin 12 of the semiconductor device of the comparative example. The completed semiconductor device is mounted on another substrate 56 by solder reflow using the solder 54. In this solder reflow, components other than the semiconductor device shown here are also mounted on “another substrate”.

  However, the mold resin 12 may be peeled off from the surface mount component 20 by this solder reflow. The following three patterns can be considered as factors of peeling. First, when the solder reflow is performed in a state where the mold resin absorbs moisture, moisture of the mold resin is rapidly vaporized and volume expansion occurs. The pressure between the surface mount component 20 and the mold resin 12 increases due to the volume expansion of the moisture of the mold resin, and the mold resin 12 is peeled from the surface mount component 20.

  Secondly, there is peeling due to differences in thermal expansion coefficients of the members such as the surface mount component 20, the mold resin 12, and the substrate 16. That is, stress is generated at the time of solder reflow due to the difference in thermal expansion coefficient of each member, and the mold resin 12 is peeled off from the surface mount component 20.

  Thirdly, there is peeling due to thermal expansion of the first solder 22a and the second solder 22b due to solder reflow. That is, the first solder 22 a and the second solder 22 b are thermally expanded to push up the mold resin 12, and the mold resin 12 is peeled off from the surface mount component 20. Due to at least one of these factors, the mold resin 12 may be peeled off from the surface mount component 20.

  When the mold resin 12 peels from the surface mount component 20, a gap is generated between them. Then, the first solder 22a and the second solder 22b fill this gap by capillary action. As a result, the first solder 22a and the second solder 22b may be coupled by the solder 50, causing the first electrode 20a and the second electrode 20b to be short-circuited. This phenomenon is called solder flash.

  In order to suppress solder flash in the semiconductor device of the comparative example, the moisture absorption amount of the mold resin is controlled, the members are selected so as to approximate the thermal expansion coefficient between the members as much as possible, and rapid heating is avoided. It was necessary to perform solder reflow.

  However, according to the semiconductor device 10 according to the first embodiment of the present invention, since the grooves 14a and 14b are formed in the mold resin 12, these portions are caused by at least one of the above three factors. It is possible to absorb the “force for peeling the mold resin 12 from the surface mount component 20” (hereinafter simply referred to as peeling force). Therefore, when the semiconductor device is reflow-mounted on another substrate 25, the mold resin 12 is not peeled off from the surface-mounted component 20, so that a short circuit between the first electrode 20a and the second electrode 20b can be prevented.

  In the semiconductor device 10 according to the first embodiment of the present invention, the grooves 14 a and 14 b are individually formed for each of the plurality of surface mount components 20. Therefore, for example, the amount of grooves can be reduced as compared with the case of forming grooves on the outer periphery of the mold resin. Therefore, solder flash can be prevented while maintaining the strength of the mold resin.

  By the way, if a groove is formed in the mold resin immediately above the surface mount component 20, the protection effect of the surface mount component by the mold resin is lowered. In this case, in order to ensure the protective effect of the surface mount component, the mold resin must be formed thick. However, in the semiconductor device 10 according to the first embodiment of the present invention, the grooves 14 a and 14 b are formed so as to avoid a position directly above the surface mount component 20. Therefore, solder flash can be prevented without increasing the thickness of the mold resin.

Embodiment 2. FIG.
FIG. 5 is a cross-sectional view of the semiconductor device according to the second embodiment of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to the second embodiment of the present invention includes dummy parts 60 and 62. The dummy components 60 and 62 are fixed to the substrate so as to be adjacent to the surface mount component 20. The dummy components 60 and 62 are made of a material harder than the surface mount component 20. Specifically, the electrodes 60a, 60b, 62a, and 62b are made of the same material as the first electrode 20a and the second electrode 20b. However, the element forming portions 60c and 62c are made of SiC. Thereby, the dummy components 60 and 62 are harder than the surface-mounted component 20. The mold resin 12 is formed so as to cover the surface mount component 20 and the dummy components 60 and 62.

  According to the semiconductor device according to the second embodiment of the present invention, the density of the mold resin 12 around the surface mount component 20 can be reduced by the dummy components 60 and 62. Therefore, the peeling force resulting from the volume expansion of the moisture of the mold resin 12 can be reduced. Further, since the dummy components 60 and 62 are formed of a harder member than the surface mount component 20, the peeling force due to the difference in thermal expansion coefficient of each member can be reduced. Therefore, it is possible to prevent the mold resin 12 from peeling from the surface mount component 20.

  If the dummy component is formed adjacent to the surface mount component 20, the above-described effect can be obtained. Therefore, the number of dummy parts and the arrangement location are not limited to those shown in FIG. Moreover, since the element formation part of a dummy component should just be formed with a material harder than the surface mounting component 20, it does not need to form with SiC. The dummy parts 60 and 62 may be fixed to the substrate via a metal pattern or directly to the substrate.

Embodiment 3 FIG.
FIG. 6 is a cross-sectional view of the semiconductor device according to the third embodiment of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to Embodiment 3 of the present invention is characterized in that hollow particles 70 are mixed in the mold resin 12. The hollow particles 70 are formed of a material that is softer than the mold resin 12. The hollow particles 70 are made of, for example, silicone rubber.

  According to the semiconductor device according to the third embodiment of the present invention, the peeling force can be absorbed by the hollow particles 70. Therefore, it is possible to prevent the mold resin 12 from being separated from the surface mount component 20. The hollow particles 70 may be formed of a material other than silicone rubber as long as the material is softer than the mold resin.

Embodiment 4 FIG.
FIG. 7 is a cross-sectional view of a semiconductor device according to Embodiment 4 of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to the fourth embodiment of the present invention includes a first solder resist 80a applied to a part of the first metal pattern 18a. Moreover, the 2nd soldering resist 80b apply | coated to a part of 2nd metal pattern 18b is provided. The first solder 22a fixes a portion of the first electrode 20a and the first metal pattern 18a where the first solder resist 80a is not applied. The second solder 22b fixes a portion of the second electrode 20b and the second metal pattern 18b where the second solder resist 80b is not applied. The first solder resist 80 a and the second solder resist 80 b are in contact with the mold resin 12.

  The portion where the first solder resist 80a is formed and the portion where the second solder resist 80b is formed do not get wet with the solder and have low adhesion to the mold resin 12. Therefore, when a peeling force is generated, a gap is formed between the first solder resist 80a and the mold resin 12 and between the second solder resist 80b and the mold resin 12. FIG. 8 is a diagram showing that a gap is formed between the solder resist and the mold resin. A gap 82 a is formed between the first solder resist 80 a and the mold resin 12. Further, a gap 82 b is formed between the second solder resist 80 b and the mold resin 12. Thus, the peeling force is absorbed by the gaps 82a and 82b, so that the mold resin 12 can be prevented from peeling from the surface mount component 20.

Embodiment 5 FIG.
FIG. 9 is a cross-sectional view of the semiconductor device according to the fifth embodiment of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to the fifth embodiment of the present invention includes a polyimide 90 formed so as to cover the surface mount component 20. The mold resin 12 is formed so as to cover the polyimide 90 and the surface mount component 20.

  According to the semiconductor device according to the fifth embodiment of the present invention, since polyimide 90 is in close contact with surface mount component 20, polyimide 90 is not peeled off from surface mount component 20. Therefore, solder flash can be prevented.

  By the way, in order to prevent solder flash, it is important to prevent the solder from diffusing into the element forming portion 20c sandwiched between the first electrode 20a and the second electrode 20b. Therefore, as long as polyimide 90 is formed so as to cover at least element forming portion 20c, the effect of the semiconductor device according to the fifth embodiment of the present invention can be obtained.

  FIG. 10 is a perspective view showing a modification of the semiconductor device according to the fifth embodiment of the present invention. The polyimide 92 is formed so as to cover the element forming portion 20c sandwiched between the first electrode 20a and the second electrode 20b. The polyimide 92 is not formed on the first electrode 20a and the second electrode 20b. Since the polyimide 92 is not formed on the first electrode 20a and the second electrode 20b, the polyimide 92 does not receive a peeling force therefrom. Therefore, the peeling force received by the polyimide 92 is smaller than the peeling force received by the polyimide 90 described above. That is, the polyimide 92 can be hardly peeled off from the element forming portion 20c.

Embodiment 6 FIG.
FIG. 11 is a sectional view of a semiconductor device according to the sixth embodiment of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to the sixth embodiment of the present invention includes a surface of the surface mount component 20 on which the first solder 22a is formed, a surface of the surface mount component 20 on which the second solder 22b is formed, and an upper surface of the surface mount component 20. The first mold resin 100 is formed so as to cover the surface. Furthermore, a surface of the surface mount component 20 that is not covered with the first mold resin 100 and a second mold resin 102 formed so as to cover the first mold resin 100 are provided. The first mold resin 100 is made of a material that is softer than the second mold resin 102 and has a thermal expansion coefficient closer to that of the surface mount component 20 than the second mold resin 102.

  FIG. 12 is a cross-sectional arrow view taken along the broken line 12-12 in FIG. The first mold resin 100 is formed so as to sandwich the surface-mounted component 20 from the outside of the first electrode 20a and the outside of the second electrode 20b. On the other hand, the second mold resin 102 is formed so as to cover the side surface of the surface mount component 20. That is, the surface-mounted component 20 is covered with the first mold resin 100 in the longitudinal direction and is covered with the second mold resin 102 in the short direction.

  According to the semiconductor device according to the sixth embodiment of the present invention, since the thermal expansion coefficients of the first mold resin 100 and the surface mount component 20 are close, the peeling force can be reduced. Further, since the soft first mold resin covers the surfaces on which the solders 22a and 22b are formed, the first mold resin 100 can absorb the peeling force.

  In addition, since the second mold resin 102 covers the side surface of the surface mount component 20 and the first mold resin 100, it is possible to prevent the displacement of the surface mount component 20 due to the deformation of the first mold resin 100 during solder reflow. .

Embodiment 7 FIG.
FIG. 13 is a cross-sectional view of a semiconductor device according to Embodiment 7 of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to Embodiment 7 of the present invention is characterized in that an oxide film 20d is formed on the upper surface of the element forming portion 20c. The oxide film 20d is formed by, for example, an oxidation process using an asher device. By this oxide film 20d, the mold resin 12 and the element forming portion 20c are bonded through oxygen ions.

  The mold resin 12 and the element forming portion 20c are strongly adhered by being bonded through oxygen ions. Therefore, even if peeling force arises, it can prevent that the mold resin 12 peels from the element formation part 20c.

Embodiment 8 FIG.
FIG. 14 is a cross-sectional view of a semiconductor device according to Embodiment 8 of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to Embodiment 8 of the present invention is characterized in that the surface roughness of the upper surface of the element forming portion 20c is larger than that of other portions of the element forming portion 20c. In other words, the upper surface of the element forming portion 20c is subjected to surface processing and is provided with irregularities 20e. The surface processing is performed by, for example, ion sputtering.

  By forming the upper surface of the element forming portion 20c roughly, the bonding area between the upper surface and the mold resin 12 can be increased, and both can be brought into close contact with each other. Therefore, even if peeling force arises, it can prevent that mold resin 12 peels from the element formation part 20c.

  The method for forming the upper surface of the element forming portion 20c roughly is not limited to ion sputtering. For example, the upper surface of the element forming portion 20c may be formed roughly by laser processing or chemical processing. As the chemical solution, a nitric acid-based or hydrofluoric acid-based chemical solution can be used.

Embodiment 9 FIG.
FIG. 15 is a sectional view of a semiconductor device according to the ninth embodiment of the present invention. The description of the same parts as those in Embodiment 1 is omitted. The semiconductor device according to Embodiment 9 of the present invention is characterized in that a silane coupling agent 20f is applied to the upper surface of the element forming portion 20c. The mold resin 12 and the element forming portion 20c are chemically bonded by the silane coupling agent 20f.

  By chemically bonding the mold resin 12 and the element forming portion 20c, the mold resin 12 and the element forming portion 20c can be brought into close contact with each other. Therefore, even if peeling force arises, it can prevent that mold resin 12 peels from the element formation part 20c.

  In the seventh to ninth embodiments of the present invention, it has been described that various processes are performed on the upper surface of the element forming portion 20c. These processes are performed in order to bring the upper surface of the element forming portion into close contact with the mold resin. Therefore, the present invention has the above-described configuration as long as a surface processed portion is formed on at least the upper surface of the element forming portion so as to improve the adhesion between the element forming portion and the mold resin more than other portions of the element forming portion. It is not limited.

  By the way, the stress generated by the difference in the thermal expansion coefficient of each member tends to concentrate on the upper surface of the element forming portion. In addition, since the moisture absorbed by the mold resin tends to accumulate above the element formation portion, the pressure due to the volume expansion of the moisture tends to concentrate on the upper surface of the element formation portion. Therefore, solder flash is likely to occur on the upper surface of the element forming portion. Therefore, as described in the seventh to ninth embodiments of the present invention, solder flash can be efficiently prevented by forming the surface processed portion on the upper surface of the element forming portion.

  For the above reasons, it is preferable to form the surface processed portion at least on the upper surface of the element forming portion. If solder flash is likely to occur also on the side surface of the element forming portion, the surface processed portion is also formed on the side surface of the element forming portion.

Embodiment 10 FIG.
FIG. 16 is a cross-sectional view of the semiconductor device according to the tenth embodiment of the present invention. The description of the same parts as those in Embodiment 1 is omitted. A collar 110a is attached to the first electrode 20a of the semiconductor device according to the tenth embodiment of the present invention. Further, a collar 110b is attached to the second electrode 20b. The collars 110 a and 110 b are attached so as to extend in a direction parallel to the substrate 16. The flanges 110a and 110b are formed to increase the creeping distance between the first solder 22a and the second solder 22b via the upper surface of the element forming portion 20c. The mold resin 12 is formed so as to cover the surface mount component 20 and the flanges 110a and 110b.

  According to the semiconductor device according to the tenth embodiment of the present invention, the creeping distance between the first solder 22a and the second solder 22b can be increased by the flanges 110a and 110b. Further, since the flanges 110a and 110b are formed so as to extend in a direction parallel to the substrate 16, it is possible to prevent the first solder 22a and the second solder 22b from creeping up. Therefore, solder flash can be prevented. In particular, solder flash can be prevented even when the mold resin 12 peels from the element forming portion 20c due to the peeling force.

Embodiment 11 FIG.
FIG. 17 is a cross-sectional view of the semiconductor device according to the eleventh embodiment of the present invention. The description of the same parts as those in Embodiment 1 is omitted. In the semiconductor device according to the eleventh embodiment of the present invention, the substrate 112 is attached to the upper surface of the surface mount component 20. The substrate 112 is attached so as to extend in a direction parallel to the substrate 16. The mold resin 12 is formed so as to cover the surface mount component 20 and the substrate 112.

  According to the semiconductor device of the eleventh embodiment of the present invention, the creepage distance between the first solder 22a and the second solder 22b can be increased by the substrate 112. Moreover, since the board | substrate 112 is formed so that it may extend in the parallel direction with the board | substrate 16, the creeping of the 1st solder 22a and the 2nd solder 22b can be prevented. Therefore, solder flash can be prevented. In particular, solder flash can be prevented even when the mold resin 12 peels from the element forming portion 20c due to the peeling force.

  FIG. 18 is a cross-sectional view showing a modification of the semiconductor device according to the eleventh embodiment of the present invention. A cap 114 is attached to the upper surface of the surface mount component 20 of the modified example. The cap 114 can provide the same effect as the substrate 112 described above.

Embodiment 12 FIG.
FIG. 19 is a cross-sectional view of a semiconductor device according to Embodiment 12 of the present invention. The description of the same parts as those in Embodiment 1 is omitted. A solder cover 116 formed so as to surround the first solder 22a is attached to the first electrode 20a of the semiconductor device according to the twelfth embodiment of the present invention. Similarly, a solder cover 118 formed so as to surround the second solder is attached to the second electrode 20b. The mold resin 12 is formed so as to cover the surface mount component 20 and the solder covers 116 and 118.

  According to the semiconductor device of the twelfth embodiment of the present invention, the creepage distance between the first solder 22a and the second solder 22b can be increased by the solder covers 116 and 118. Therefore, solder flash can be prevented. Moreover, since the solder covers 116 and 118 are formed so as to surround the first solder 22a and the second solder 22b, it is possible to prevent solder flash from occurring on the side surface of the element forming portion 20c.

  In Embodiments 10 to 12 of the present invention, it has been described that the creepage distance between the first solder 22a and the second solder 22b is increased. The present invention can be modified in various ways other than the configuration described above. That is, the present invention can be variously modified as long as it has a short-circuit preventing portion attached to the surface of the surface-mounted component so as to extend the creeping distance from the first solder to the second solder. Specific examples of the short prevention unit are the ridges 110a and 110b, the substrate 112, the cap 114, and the solder covers 116 and 118.

  Note that the semiconductor device according to all the embodiments of the present invention can prevent solder flash when it is reflow mounted on another substrate.

  DESCRIPTION OF SYMBOLS 10 Semiconductor device, 12 Mold resin, 14a, 14b Groove, 16 Substrate, 18a 1st metal pattern, 18b 2nd metal pattern, 20 Surface mount component, 20a 1st electrode, 20b 2nd electrode, 20c Element formation part, 20d Oxidation part Film, 20f silane coupling agent, 22a first solder, 22b second solder, 60,62 dummy part, 70 hollow particles, 80a first solder resist, 80b second solder resist, 82a, 82b gap, 90,92 polyimide, 100 First mold resin, 102 Second mold resin, 110a, 110b, 112 Substrate, 114 Cap, 116, 118 Solder cap

Claims (11)

A substrate,
A first metal pattern formed on the substrate;
A second metal pattern formed on the substrate;
A surface mount component having a first electrode formed at one end and a second electrode formed at the other end;
A first solder for fixing the first electrode and the first metal pattern;
A second solder for fixing the second electrode and the second metal pattern;
A mold resin which covers the surface mount component and has a groove formed so as to sandwich the surface mount component from the outside of the first electrode and the outside of the second electrode;
A semiconductor device comprising: A substrate,
A first metal pattern formed on the substrate;
A second metal pattern formed on the substrate;
A surface mount component having a first electrode formed at one end and a second electrode formed at the other end;
A first solder for fixing the first electrode and the first metal pattern;
A second solder for fixing the second electrode and the second metal pattern;
A dummy component fixed to the substrate so as to be adjacent to the surface mount component, and formed of a material harder than the surface mount component;
Mold resin formed so as to cover the surface mount component and the dummy component,
A semiconductor device comprising: A substrate,
A first metal pattern formed on the substrate;
A second metal pattern formed on the substrate;
A surface mount component having a first electrode formed at one end and a second electrode formed at the other end;
A first solder for fixing the first electrode and the first metal pattern;
A second solder for fixing the second electrode and the second metal pattern;
Mold resin formed so as to cover the surface mount component,
Hollow particles formed of a material softer than the mold resin and mixed in the mold resin,
A semiconductor device comprising: A substrate,
A first metal pattern formed on the substrate;
A first solder resist applied to a part of the first metal pattern;
A second metal pattern formed on the substrate;
A second solder resist applied to a part of the second metal pattern;
A surface mount component having a first electrode formed at one end and a second electrode formed at the other end;
A first solder for fixing the first electrode and a portion of the first metal pattern not coated with the first solder resist;
A second solder for fixing the second electrode and a portion of the second metal pattern not coated with the second solder resist;
Mold resin formed in contact with the first solder resist and the second solder resist so as to cover the surface mount component;
A semiconductor device comprising: A substrate,
A first metal pattern formed on the substrate;
A second metal pattern formed on the substrate;
An element forming portion, and a surface mount component having a first electrode and a second electrode formed so as to sandwich the element forming portion;
A first solder for fixing the first electrode and the first metal pattern;
A second solder for fixing the second electrode and the second metal pattern;
Polyimide formed so as to cover at least the element forming portion of the surface mount component;
Mold resin formed so as to cover the polyimide and the surface-mounted component,
A semiconductor device comprising: A substrate,
A first metal pattern formed on the substrate;
A second metal pattern formed on the substrate;
An element forming portion, and a surface mount component having a first electrode and a second electrode formed so as to sandwich the element forming portion;
A first solder for fixing the first electrode and the first metal pattern;
A second solder for fixing the second electrode and the second metal pattern;
A first mold resin formed so as to cover a surface of the surface mount component on which the first solder is formed, a surface of the surface mount component on which the second solder is formed, and an upper surface of the surface mount component;
A surface of the surface-mounted component not covered with the first mold resin, and a second mold resin formed to cover the first mold resin,
The semiconductor device, wherein the first mold resin is made of a material that is softer than the second mold resin and has a thermal expansion coefficient closer to that of the surface mount component than the second mold resin. A substrate,
A first metal pattern formed on the substrate;
A second metal pattern formed on the substrate;
An element forming portion, and a surface mount component having a first electrode and a second electrode formed so as to sandwich the element forming portion;
A first solder for fixing the first electrode and the first metal pattern;
A second solder for fixing the second electrode and the second metal pattern;
Mold resin formed so as to cover the surface mount component,
A surface-processed part formed on at least the upper surface of the element forming part so as to enhance the adhesion between the element forming part and the mold resin, compared to other parts of the element forming part;
A semiconductor device comprising:   The semiconductor device according to claim 7, wherein the surface processed portion is an oxide film formed by an oxidation process.   The semiconductor device according to claim 7, wherein the surface processed portion has a larger surface roughness than other portions of the element forming portion.   The semiconductor device according to claim 7, wherein the surface processed portion is formed by applying a silane coupling agent. A substrate,
A first metal pattern formed on the substrate;
A second metal pattern formed on the substrate;
An element forming portion, and a surface mount component having a first electrode and a second electrode formed so as to sandwich the element forming portion;
A first solder for fixing the first electrode and the first metal pattern;
A second solder for fixing the second electrode and the second metal pattern;
A short-circuit prevention portion attached to the surface of the surface-mounted component so as to extend a creepage distance from the first solder to the second solder;
Mold resin formed to cover the surface mount component and the short prevention part,
A semiconductor device comprising:

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