JP2005026468A5 - - Google Patents
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- Publication number
- JP2005026468A5 JP2005026468A5 JP2003190501A JP2003190501A JP2005026468A5 JP 2005026468 A5 JP2005026468 A5 JP 2005026468A5 JP 2003190501 A JP2003190501 A JP 2003190501A JP 2003190501 A JP2003190501 A JP 2003190501A JP 2005026468 A5 JP2005026468 A5 JP 2005026468A5
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003190501A JP4358563B2 (ja) | 2003-07-02 | 2003-07-02 | 半導体装置の低誘電率絶縁膜形成方法 |
| PCT/JP2004/009330 WO2005004223A1 (ja) | 2003-07-02 | 2004-07-01 | 半導体装置の低誘電率絶縁膜形成方法，その方法を用いた半導体装置および低誘電率絶縁膜形成装置 |
| US11/322,318 US20060154492A1 (en) | 2003-07-02 | 2006-01-03 | Forming method of low dielectric constant insulating film of semiconductor device, semiconductor device, and low dielectric constant insulating film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003190501A JP4358563B2 (ja) | 2003-07-02 | 2003-07-02 | 半導体装置の低誘電率絶縁膜形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005026468A JP2005026468A (ja) | 2005-01-27 |
| JP2005026468A5 true JP2005026468A5 (ja) | 2006-07-27 |
| JP4358563B2 JP4358563B2 (ja) | 2009-11-04 |
Family
ID=33562334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003190501A Expired - Fee Related JP4358563B2 (ja) | 2003-07-02 | 2003-07-02 | 半導体装置の低誘電率絶縁膜形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060154492A1 (ja) |
| JP (1) | JP4358563B2 (ja) |
| WO (1) | WO2005004223A1 (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332614A (ja) * | 2005-04-25 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、有機トランジスタ及びその作製方法 |
| US20060270066A1 (en) * | 2005-04-25 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
| US7410839B2 (en) | 2005-04-28 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| TWI408734B (zh) | 2005-04-28 | 2013-09-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| US7785947B2 (en) | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
| US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
| US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7838347B2 (en) | 2005-08-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
| KR100933374B1 (ko) * | 2006-01-13 | 2009-12-22 | 도쿄엘렉트론가부시키가이샤 | 다공질 막의 성막 방법 및 컴퓨터 판독가능한 기록 매체 |
| KR20080062744A (ko) * | 2006-12-29 | 2008-07-03 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
| US11508573B2 (en) | 2019-12-31 | 2022-11-22 | Micron Technology, Inc. | Plasma doping of gap fill materials |
| KR102508464B1 (ko) * | 2021-04-01 | 2023-03-09 | 주식회사 코비스테크놀로지 | 질량 측정 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6861356B2 (en) * | 1997-11-05 | 2005-03-01 | Tokyo Electron Limited | Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
| US6576300B1 (en) * | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
| US6759098B2 (en) * | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
| KR20060009395A (ko) * | 2001-01-25 | 2006-01-31 | 동경 엘렉트론 주식회사 | 기판의 처리 방법 |
| JP2002280369A (ja) * | 2001-03-19 | 2002-09-27 | Canon Sales Co Inc | シリコン基板の酸化膜形成装置及び酸化膜形成方法 |
| JP4124315B2 (ja) * | 2001-05-01 | 2008-07-23 | 東京応化工業株式会社 | 被膜の処理方法およびこの方法を用いた半導体素子の製造方法 |
| JP2003068850A (ja) * | 2001-08-29 | 2003-03-07 | Tokyo Electron Ltd | 半導体装置およびその製造方法 |
| US6838300B2 (en) * | 2003-02-04 | 2005-01-04 | Texas Instruments Incorporated | Chemical treatment of low-k dielectric films |
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2003
- 2003-07-02 JP JP2003190501A patent/JP4358563B2/ja not_active Expired - Fee Related
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2004
- 2004-07-01 WO PCT/JP2004/009330 patent/WO2005004223A1/ja active Application Filing
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2006
- 2006-01-03 US US11/322,318 patent/US20060154492A1/en not_active Abandoned