JP2005005578A5 - - Google Patents
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- JP2005005578A5 JP2005005578A5 JP2003169162A JP2003169162A JP2005005578A5 JP 2005005578 A5 JP2005005578 A5 JP 2005005578A5 JP 2003169162 A JP2003169162 A JP 2003169162A JP 2003169162 A JP2003169162 A JP 2003169162A JP 2005005578 A5 JP2005005578 A5 JP 2005005578A5
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- JP
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003169162A JP4532853B2 (en) | 2003-06-13 | 2003-06-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003169162A JP4532853B2 (en) | 2003-06-13 | 2003-06-13 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005005578A JP2005005578A (en) | 2005-01-06 |
| JP2005005578A5 true JP2005005578A5 (en) | 2006-06-08 |
| JP4532853B2 JP4532853B2 (en) | 2010-08-25 |
Family
ID=34094387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003169162A Expired - Fee Related JP4532853B2 (en) | 2003-06-13 | 2003-06-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4532853B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101007478B1 (en) | 2006-02-07 | 2011-01-12 | 미쓰비시덴키 가부시키가이샤 | Semiconductor device and method for manufacturing same |
| JP2007234942A (en) * | 2006-03-02 | 2007-09-13 | Nissan Motor Co Ltd | Method of manufacturing semiconductor device |
| JP4698767B2 (en) | 2008-08-21 | 2011-06-08 | パナソニック株式会社 | Semiconductor device |
| JP2010182762A (en) * | 2009-02-04 | 2010-08-19 | Oki Semiconductor Co Ltd | Semiconductor element and method for manufacturing same |
| JP2012114104A (en) * | 2009-02-24 | 2012-06-14 | Hitachi Ltd | Storage insulation gate type field effect transistor |
| JP5428435B2 (en) * | 2009-03-24 | 2014-02-26 | 株式会社デンソー | Semiconductor device provided with Schottky barrier diode and manufacturing method thereof |
| US8421151B2 (en) | 2009-10-22 | 2013-04-16 | Panasonic Corporation | Semiconductor device and process for production thereof |
| US8563986B2 (en) * | 2009-11-03 | 2013-10-22 | Cree, Inc. | Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices |
| JP2012064741A (en) * | 2010-09-16 | 2012-03-29 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
| JP6549972B2 (en) * | 2015-11-20 | 2019-07-24 | 株式会社日立製作所 | Semiconductor device and method of manufacturing the same |
| WO2019092870A1 (en) * | 2017-11-13 | 2019-05-16 | 新電元工業株式会社 | Wide gap semiconductor device |
| JP7414499B2 (en) | 2019-12-05 | 2024-01-16 | 株式会社豊田中央研究所 | nitride semiconductor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6164165A (en) * | 1984-09-05 | 1986-04-02 | Matsushita Electric Ind Co Ltd | Mos type field-effect transistor |
| JPH0382163A (en) * | 1989-08-25 | 1991-04-08 | Hitachi Ltd | Power mosfet and manufacture thereof |
| JPH03133180A (en) * | 1989-10-19 | 1991-06-06 | Matsushita Electron Corp | Semiconductor device |
| JPH04276663A (en) * | 1991-03-05 | 1992-10-01 | Nec Yamagata Ltd | Semiconductor device |
| JPH05299658A (en) * | 1992-04-20 | 1993-11-12 | Nec Kansai Ltd | Semiconductor device and manufacture thereof |
| JP3395520B2 (en) * | 1996-06-04 | 2003-04-14 | 富士電機株式会社 | Insulated gate bipolar transistor |
| JPH10242458A (en) * | 1997-02-25 | 1998-09-11 | Toshiba Corp | Semiconductor device |
| JP4806852B2 (en) * | 2001-03-12 | 2011-11-02 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
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2003
- 2003-06-13 JP JP2003169162A patent/JP4532853B2/en not_active Expired - Fee Related