JP2004523928A - 層系における参照磁化を確定するための方法 - Google Patents

層系における参照磁化を確定するための方法 Download PDF

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Publication number
JP2004523928A
JP2004523928A JP2002581537A JP2002581537A JP2004523928A JP 2004523928 A JP2004523928 A JP 2004523928A JP 2002581537 A JP2002581537 A JP 2002581537A JP 2002581537 A JP2002581537 A JP 2002581537A JP 2004523928 A JP2004523928 A JP 2004523928A
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Japan
Prior art keywords
layer
magnetization
layer system
magnetic field
reference magnetization
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JP2002581537A
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English (en)
Japanese (ja)
Inventor
デ ハース オリヴァー
シェファー ルドルフ
シュナイダー クラウス
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Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Original Assignee
Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
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Application filed by Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV filed Critical Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Publication of JP2004523928A publication Critical patent/JP2004523928A/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H01F41/304—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation using temporary decoupling, e.g. involving blocking, Néel or Curie temperature transitions by heat treatment in presence/absence of a magnetic field

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thermal Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
JP2002581537A 2001-04-12 2002-04-05 層系における参照磁化を確定するための方法 Pending JP2004523928A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10119381 2001-04-12
PCT/DE2002/001302 WO2002084680A1 (fr) 2001-04-12 2002-04-05 Procede pour definir des magnetisations de reference dans des systemes de couches

Publications (1)

Publication Number Publication Date
JP2004523928A true JP2004523928A (ja) 2004-08-05

Family

ID=7682096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002581537A Pending JP2004523928A (ja) 2001-04-12 2002-04-05 層系における参照磁化を確定するための方法

Country Status (4)

Country Link
EP (1) EP1377993A1 (fr)
JP (1) JP2004523928A (fr)
DE (1) DE10215506A1 (fr)
WO (1) WO2002084680A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277834A (ja) * 2007-05-02 2008-11-13 Magic Technologies Inc 磁場角センサおよび磁気トンネル接合素子並びに磁場角センサの製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032483A1 (de) * 2004-07-05 2006-01-26 Infineon Technologies Ag Verfahren zum Erzeugen einer lokalen Magnetisierung und Bauelement
DE102007040183A1 (de) * 2007-08-25 2009-03-05 Sensitec Naomi Gmbh Magnetfeldsensor zur Erfassung eines äußeren magnetischen Felds, insbesondere des Erdmagnetfelds, sowie mit solchen Magnetfeldsensoren gebildetes Magnetfeldsensorsystem
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
EP3300534B1 (fr) 2015-06-05 2020-11-11 Allegro MicroSystems, LLC Élément de magnétorésistance à vanne de spin à réponse améliorée aux champs magnétiques
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1074658A (ja) * 1996-06-28 1998-03-17 Victor Co Of Japan Ltd スピンバルブ磁気抵抗効果素子の製造方法
JP3456409B2 (ja) * 1998-03-23 2003-10-14 Ｔｄｋ株式会社 薄膜磁気ヘッドの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277834A (ja) * 2007-05-02 2008-11-13 Magic Technologies Inc 磁場角センサおよび磁気トンネル接合素子並びに磁場角センサの製造方法

Also Published As

Publication number Publication date
DE10215506A1 (de) 2002-10-24
WO2002084680A1 (fr) 2002-10-24
EP1377993A1 (fr) 2004-01-07

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