JP2004523892A5 - - Google Patents

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Publication number
JP2004523892A5
JP2004523892A5 JP2002556951A JP2002556951A JP2004523892A5 JP 2004523892 A5 JP2004523892 A5 JP 2004523892A5 JP 2002556951 A JP2002556951 A JP 2002556951A JP 2002556951 A JP2002556951 A JP 2002556951A JP 2004523892 A5 JP2004523892 A5 JP 2004523892A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002556951A
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JP2004523892A (ja
JP3959347B2 (ja
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Publication date
Priority claimed from US09/748,801 external-priority patent/US6888171B2/en
Application filed filed Critical
Publication of JP2004523892A publication Critical patent/JP2004523892A/ja
Publication of JP2004523892A5 publication Critical patent/JP2004523892A5/ja
Application granted granted Critical
Publication of JP3959347B2 publication Critical patent/JP3959347B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002556951A 2000-12-22 2001-12-21 発光ダイオード Expired - Fee Related JP3959347B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/748,801 US6888171B2 (en) 2000-12-22 2000-12-22 Light emitting diode
PCT/US2001/050590 WO2002056386A1 (en) 2000-12-22 2001-12-21 Improved light emitting diode

Publications (3)

Publication Number Publication Date
JP2004523892A JP2004523892A (ja) 2004-08-05
JP2004523892A5 true JP2004523892A5 (ja) 2007-03-08
JP3959347B2 JP3959347B2 (ja) 2007-08-15

Family

ID=25010984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002556951A Expired - Fee Related JP3959347B2 (ja) 2000-12-22 2001-12-21 発光ダイオード

Country Status (6)

Country Link
US (1) US6888171B2 (ja)
EP (1) EP1344255B1 (ja)
JP (1) JP3959347B2 (ja)
KR (1) KR100638786B1 (ja)
CN (1) CN100367508C (ja)
WO (1) WO2002056386A1 (ja)

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KR100665284B1 (ko) * 2005-11-07 2007-01-09 삼성전기주식회사 반도체 발광 소자
US8878245B2 (en) * 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8384115B2 (en) * 2008-08-01 2013-02-26 Cree, Inc. Bond pad design for enhancing light extraction from LED chips
US8741715B2 (en) * 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
US9136436B2 (en) 2010-02-09 2015-09-15 Epistar Corporation Optoelectronic device and the manufacturing method thereof
US9640728B2 (en) 2010-02-09 2017-05-02 Epistar Corporation Optoelectronic device and the manufacturing method thereof
US10205059B2 (en) 2010-02-09 2019-02-12 Epistar Corporation Optoelectronic device and the manufacturing method thereof
TWI513040B (zh) * 2010-02-09 2015-12-11 Epistar Corp 光電元件及其製造方法
US9006774B2 (en) * 2010-02-09 2015-04-14 Epistar Corporation Optoelectronic device and the manufacturing method thereof
JP5197654B2 (ja) 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法
KR101525913B1 (ko) * 2010-06-22 2015-06-10 순천대학교 산학협력단 수직구조 발광다이오드 및 이의 제조방법
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN102339913B (zh) * 2011-09-30 2013-06-19 映瑞光电科技(上海)有限公司 高压led器件及其制造方法
KR102107863B1 (ko) 2011-11-07 2020-05-08 루미리즈 홀딩 비.브이. 더 균일한 주입과 낮은 광손실을 갖는 개선된 p-컨택트
CN102593284B (zh) 2012-03-05 2014-06-18 映瑞光电科技(上海)有限公司 隔离深沟槽及其高压led芯片的制造方法
CN108447855B (zh) 2012-11-12 2020-11-24 晶元光电股份有限公司 半导体光电元件的制作方法
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块

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