JP2004521491A5 - - Google Patents
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- Publication number
- JP2004521491A5 JP2004521491A5 JP2002560248A JP2002560248A JP2004521491A5 JP 2004521491 A5 JP2004521491 A5 JP 2004521491A5 JP 2002560248 A JP2002560248 A JP 2002560248A JP 2002560248 A JP2002560248 A JP 2002560248A JP 2004521491 A5 JP2004521491 A5 JP 2004521491A5
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- providing
- grating
- mirror
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims 7
- 230000005693 optoelectronics Effects 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/751,422 US6782027B2 (en) | 2000-12-29 | 2000-12-29 | Resonant reflector for use with optoelectronic devices |
| PCT/US2001/049089 WO2002060024A2 (en) | 2000-12-29 | 2001-12-18 | Resonant reflector for use with optoelectronic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004521491A JP2004521491A (ja) | 2004-07-15 |
| JP2004521491A5 true JP2004521491A5 (enExample) | 2005-12-22 |
Family
ID=25021909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002560248A Pending JP2004521491A (ja) | 2000-12-29 | 2001-12-18 | 光電子デバイスと共に使用される共振反射器 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6782027B2 (enExample) |
| EP (1) | EP1362396B1 (enExample) |
| JP (1) | JP2004521491A (enExample) |
| KR (1) | KR20030068573A (enExample) |
| AT (1) | ATE320671T1 (enExample) |
| DE (1) | DE60118035T2 (enExample) |
| TW (1) | TW552750B (enExample) |
| WO (1) | WO2002060024A2 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727520B2 (en) | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
| TWI227799B (en) * | 2000-12-29 | 2005-02-11 | Honeywell Int Inc | Resonant reflector for increased wavelength and polarization control |
| US6813431B2 (en) * | 2002-02-26 | 2004-11-02 | Intel Corporation | Integrated photodevice and waveguide |
| JP4074498B2 (ja) * | 2002-09-25 | 2008-04-09 | セイコーエプソン株式会社 | 面発光型発光素子、光モジュールおよび光伝達装置 |
| US7299991B2 (en) * | 2003-04-08 | 2007-11-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Reflective members for use in encoder systems |
| TW200505120A (en) * | 2003-07-29 | 2005-02-01 | Copax Photonics Corp | Single transverse mode vertical cavity surface emitting laser device with array structure and method for fabricating the same |
| US7269196B2 (en) * | 2004-07-06 | 2007-09-11 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof |
| US7920612B2 (en) * | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
| US7596165B2 (en) * | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
| US7829912B2 (en) * | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
| US7385691B2 (en) * | 2005-01-27 | 2008-06-10 | Hewlett-Packard Development Company, L.P. | Integrated modular system and method for enhanced Raman spectroscopy |
| US7151599B2 (en) * | 2005-01-27 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Monolithic system and method for enhanced Raman spectroscopy |
| US7136160B2 (en) * | 2005-01-27 | 2006-11-14 | Hewlett-Packard Development Company, L.P. | Integrated system and method for transversal enhanced Raman Spectroscopy |
| JP4515949B2 (ja) * | 2005-03-31 | 2010-08-04 | 株式会社東芝 | 面型光半導体素子 |
| US7629661B2 (en) * | 2006-02-10 | 2009-12-08 | Noble Peak Vision Corp. | Semiconductor devices with photoresponsive components and metal silicide light blocking structures |
| JP2007234824A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | 垂直共振器型面発光レーザ |
| US7805826B1 (en) * | 2006-07-06 | 2010-10-05 | Hewlett-Packard Development Company, L.P. | Fabrication of slot waveguide |
| US7627017B2 (en) * | 2006-08-25 | 2009-12-01 | Stc. Unm | Laser amplifier and method of making the same |
| CN101535859B (zh) * | 2006-09-13 | 2012-05-02 | 埃迪斯科文大学 | 光学连接组件 |
| US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
| JP5300344B2 (ja) * | 2007-07-06 | 2013-09-25 | キヤノン株式会社 | 光検出素子及び撮像素子、光検出方法及び撮像方法 |
| JP4911774B2 (ja) * | 2007-07-25 | 2012-04-04 | パナソニック株式会社 | 光送受信装置及びそれを用いた光通信システム |
| JP2009158955A (ja) * | 2007-12-06 | 2009-07-16 | Rohm Co Ltd | 窒化物半導体レーザダイオード |
| US8617993B2 (en) * | 2010-02-01 | 2013-12-31 | Lam Research Corporation | Method of reducing pattern collapse in high aspect ratio nanostructures |
| US8646949B2 (en) * | 2010-03-03 | 2014-02-11 | LumenFlow Corp. | Constrained folded path resonant white light scintillator |
| WO2013105959A1 (en) * | 2012-01-12 | 2013-07-18 | Hewlett-Packard Development Company, L.P. | Integrated sub-wavelength grating system |
| CN103999304A (zh) * | 2012-01-18 | 2014-08-20 | 惠普发展公司,有限责任合伙企业 | 集成亚波长光栅元件 |
| KR20130085763A (ko) * | 2012-01-20 | 2013-07-30 | 삼성전자주식회사 | 광 집적 회로용 혼성 레이저 광원 |
| TW201504599A (zh) * | 2013-05-30 | 2015-02-01 | Univ California | 具有高對比光柵及可作爲雙重用途之高對比光柵垂直腔表面發射雷射檢測器之二維週期結構的極化無關光檢測器 |
| US10826274B2 (en) | 2018-02-12 | 2020-11-03 | Lumentum Operations Llc | Grating structure for surface-emitting laser |
| WO2020014561A1 (en) * | 2018-07-13 | 2020-01-16 | The Government of the United State of America, as represented by the Secretary of the Navy | Highly stable semiconductor lasers and sensors for iii-v and silicon photonic integrated circuits |
| US10818807B2 (en) * | 2019-01-21 | 2020-10-27 | Globalfoundries Inc. | Semiconductor detectors integrated with Bragg reflectors |
| US11437785B2 (en) * | 2019-09-23 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | VCSEL with self-aligned microlens to improve beam divergence |
| CN110676689A (zh) * | 2019-10-12 | 2020-01-10 | 长春理工大学 | 一种垂直腔面发射半导体激光器及其制备方法 |
| US11340403B2 (en) * | 2020-03-03 | 2022-05-24 | Globalfoundries U.S. Inc. | Photonic component with distributed Bragg reflectors |
| US12149049B2 (en) * | 2020-12-31 | 2024-11-19 | Win Semiconductors Corp. | Vertical-cavity surface-emitting laser and method for forming the same |
| US20240186766A1 (en) * | 2022-10-19 | 2024-06-06 | Ii-Vi Delaware, Inc. | Polarized/lensed back-side emitting (bse) vertical-cavity surface-emitting laser (vcsel) |
| CN120821012B (zh) * | 2025-09-17 | 2025-12-02 | 北京阿法龙科技有限公司 | 基于纳米压印的超表面光栅结构、其制造方法及系统 |
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| CA1108902A (en) | 1978-06-15 | 1981-09-15 | R. Ian Macdonald | Wavelength selective optical coupler |
| US4317085A (en) | 1979-09-12 | 1982-02-23 | Xerox Corporation | Channeled mesa laser |
| JPS60123084A (ja) | 1983-12-08 | 1985-07-01 | Matsushita Electric Ind Co Ltd | 半導体光発生装置 |
| US4660207A (en) | 1984-11-21 | 1987-04-21 | Northern Telecom Limited | Surface-emitting light emitting device |
| US4784722A (en) | 1985-01-22 | 1988-11-15 | Massachusetts Institute Of Technology | Method forming surface emitting diode laser |
| GB2203891A (en) | 1987-04-21 | 1988-10-26 | Plessey Co Plc | Semiconductor diode laser array |
| JPS63318195A (ja) | 1987-06-19 | 1988-12-27 | Agency Of Ind Science & Technol | 横方向埋め込み型面発光レ−ザ |
| US4885592A (en) | 1987-12-28 | 1989-12-05 | Kofol J Stephen | Electronically steerable antenna |
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| JPH0254981A (ja) | 1988-08-20 | 1990-02-23 | Fujitsu Ltd | 面発光レーザ及びレーザアレイ |
| US4901327A (en) | 1988-10-24 | 1990-02-13 | General Dynamics Corporation, Electronics Division | Transverse injection surface emitting laser |
| US4943970A (en) | 1988-10-24 | 1990-07-24 | General Dynamics Corporation, Electronics Division | Surface emitting laser |
| US4956844A (en) | 1989-03-17 | 1990-09-11 | Massachusetts Institute Of Technology | Two-dimensional surface-emitting laser array |
| US5031187A (en) | 1990-02-14 | 1991-07-09 | Bell Communications Research, Inc. | Planar array of vertical-cavity, surface-emitting lasers |
| US5204871A (en) | 1990-03-29 | 1993-04-20 | Larkins Eric C | Bistable optical laser based on a heterostructure pnpn thyristor |
| US5115442A (en) | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
| US5034958A (en) | 1990-04-19 | 1991-07-23 | Bell Communications Research, Inc. | Front-surface emitting diode laser |
| US5052016A (en) | 1990-05-18 | 1991-09-24 | University Of New Mexico | Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser |
| US5056098A (en) | 1990-07-05 | 1991-10-08 | At&T Bell Laboratories | Vertical cavity laser with mirror having controllable reflectivity |
| US5158908A (en) | 1990-08-31 | 1992-10-27 | At&T Bell Laboratories | Distributed bragg reflectors and devices incorporating same |
| US5237581A (en) | 1990-11-14 | 1993-08-17 | Nec Corporation | Semiconductor multilayer reflector and light emitting device with the same |
| US5216263A (en) | 1990-11-29 | 1993-06-01 | Xerox Corporation | High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays |
| US5062115A (en) | 1990-12-28 | 1991-10-29 | Xerox Corporation | High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays |
| US5140605A (en) | 1991-06-27 | 1992-08-18 | Xerox Corporation | Thermally stabilized diode laser structure |
| US5216680A (en) | 1991-07-11 | 1993-06-01 | Board Of Regents, The University Of Texas System | Optical guided-mode resonance filter |
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| US5404373A (en) | 1991-11-08 | 1995-04-04 | University Of New Mexico | Electro-optical device |
| US5325386A (en) | 1992-04-21 | 1994-06-28 | Bandgap Technology Corporation | Vertical-cavity surface emitting laser assay display system |
| JP3206097B2 (ja) | 1992-04-22 | 2001-09-04 | セイコーエプソン株式会社 | 面発光型半導体レーザ |
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| US5285466A (en) | 1992-05-20 | 1994-02-08 | Wisconsin Alumni Research Foundation | Feedback mechanism for vertical cavity surface emitting lasers |
| US5293392A (en) | 1992-07-31 | 1994-03-08 | Motorola, Inc. | Top emitting VCSEL with etch stop layer |
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| JPH0669585A (ja) | 1992-08-12 | 1994-03-11 | Fujitsu Ltd | 面発光半導体レーザ及びその製造方法 |
| US5363397A (en) | 1992-10-29 | 1994-11-08 | Internatioal Business Machines Corporation | Integrated short cavity laser with bragg mirrors |
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| DE4240706A1 (de) | 1992-12-03 | 1994-06-09 | Siemens Ag | Oberflächenemittierende Laserdiode |
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| US5513202A (en) | 1994-02-25 | 1996-04-30 | Matsushita Electric Industrial Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser |
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| US6064783A (en) * | 1994-05-25 | 2000-05-16 | Congdon; Philip A. | Integrated laser and coupled waveguide |
| US5557626A (en) | 1994-06-15 | 1996-09-17 | Motorola | Patterned mirror VCSEL with adjustable selective etch region |
| US5778018A (en) | 1994-10-13 | 1998-07-07 | Nec Corporation | VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices |
| US5530715A (en) | 1994-11-29 | 1996-06-25 | Motorola, Inc. | Vertical cavity surface emitting laser having continuous grading |
| US5568499A (en) | 1995-04-07 | 1996-10-22 | Sandia Corporation | Optical device with low electrical and thermal resistance bragg reflectors |
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| US5978401A (en) | 1995-10-25 | 1999-11-02 | Honeywell Inc. | Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver |
| US5727013A (en) | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
| FR2741483B1 (fr) | 1995-11-21 | 1998-01-02 | Thomson Csf | Dispositif optoelectronique a puits quantiques |
| US5903590A (en) | 1996-05-20 | 1999-05-11 | Sandia Corporation | Vertical-cavity surface-emitting laser device |
| US5940422A (en) | 1996-06-28 | 1999-08-17 | Honeywell Inc. | Laser with an improved mode control |
| US5774487A (en) | 1996-10-16 | 1998-06-30 | Honeywell Inc. | Filamented multi-wavelength vertical-cavity surface emitting laser |
| US5835521A (en) * | 1997-02-10 | 1998-11-10 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
| US6055262A (en) * | 1997-06-11 | 2000-04-25 | Honeywell Inc. | Resonant reflector for improved optoelectronic device performance and enhanced applicability |
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| US6330388B1 (en) * | 1999-01-27 | 2001-12-11 | Northstar Photonics, Inc. | Method and apparatus for waveguide optics and devices |
-
2000
- 2000-12-29 US US09/751,422 patent/US6782027B2/en not_active Expired - Lifetime
-
2001
- 2001-12-18 JP JP2002560248A patent/JP2004521491A/ja active Pending
- 2001-12-18 AT AT01994296T patent/ATE320671T1/de not_active IP Right Cessation
- 2001-12-18 WO PCT/US2001/049089 patent/WO2002060024A2/en not_active Ceased
- 2001-12-18 EP EP01994296A patent/EP1362396B1/en not_active Expired - Lifetime
- 2001-12-18 DE DE60118035T patent/DE60118035T2/de not_active Expired - Lifetime
- 2001-12-18 KR KR10-2003-7008907A patent/KR20030068573A/ko not_active Ceased
- 2001-12-28 TW TW090132816A patent/TW552750B/zh not_active IP Right Cessation
-
2004
- 2004-07-06 US US10/884,895 patent/US7288421B2/en not_active Expired - Fee Related
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