TW552750B - Resonant reflector for use with optoelectronic devices - Google Patents
Resonant reflector for use with optoelectronic devices Download PDFInfo
- Publication number
- TW552750B TW552750B TW090132816A TW90132816A TW552750B TW 552750 B TW552750 B TW 552750B TW 090132816 A TW090132816 A TW 090132816A TW 90132816 A TW90132816 A TW 90132816A TW 552750 B TW552750 B TW 552750B
- Authority
- TW
- Taiwan
- Prior art keywords
- grating
- waveguide
- patent application
- item
- scope
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 36
- 238000005253 cladding Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 21
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000011049 filling Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 12
- 101150071146 COX2 gene Proteins 0.000 claims 1
- 101100114534 Caenorhabditis elegans ctc-2 gene Proteins 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 101150000187 PTGS2 gene Proteins 0.000 claims 1
- 241001620634 Roger Species 0.000 claims 1
- 230000003139 buffering effect Effects 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000010304 firing Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 210000003813 thumb Anatomy 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 116
- 230000005855 radiation Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 239000007943 implant Substances 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FFKMIDVNOVCMSY-UHFFFAOYSA-N [Re]=O.[Sn] Chemical compound [Re]=O.[Sn] FFKMIDVNOVCMSY-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Aerials With Secondary Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/751,422 US6782027B2 (en) | 2000-12-29 | 2000-12-29 | Resonant reflector for use with optoelectronic devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW552750B true TW552750B (en) | 2003-09-11 |
Family
ID=25021909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090132816A TW552750B (en) | 2000-12-29 | 2001-12-28 | Resonant reflector for use with optoelectronic devices |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6782027B2 (enExample) |
| EP (1) | EP1362396B1 (enExample) |
| JP (1) | JP2004521491A (enExample) |
| KR (1) | KR20030068573A (enExample) |
| AT (1) | ATE320671T1 (enExample) |
| DE (1) | DE60118035T2 (enExample) |
| TW (1) | TW552750B (enExample) |
| WO (1) | WO2002060024A2 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727520B2 (en) | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
| TWI227799B (en) * | 2000-12-29 | 2005-02-11 | Honeywell Int Inc | Resonant reflector for increased wavelength and polarization control |
| US6813431B2 (en) * | 2002-02-26 | 2004-11-02 | Intel Corporation | Integrated photodevice and waveguide |
| JP4074498B2 (ja) * | 2002-09-25 | 2008-04-09 | セイコーエプソン株式会社 | 面発光型発光素子、光モジュールおよび光伝達装置 |
| US7299991B2 (en) * | 2003-04-08 | 2007-11-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Reflective members for use in encoder systems |
| TW200505120A (en) * | 2003-07-29 | 2005-02-01 | Copax Photonics Corp | Single transverse mode vertical cavity surface emitting laser device with array structure and method for fabricating the same |
| US7269196B2 (en) * | 2004-07-06 | 2007-09-11 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof |
| US7920612B2 (en) * | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
| US7596165B2 (en) * | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
| US7829912B2 (en) * | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
| US7385691B2 (en) * | 2005-01-27 | 2008-06-10 | Hewlett-Packard Development Company, L.P. | Integrated modular system and method for enhanced Raman spectroscopy |
| US7151599B2 (en) * | 2005-01-27 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Monolithic system and method for enhanced Raman spectroscopy |
| US7136160B2 (en) * | 2005-01-27 | 2006-11-14 | Hewlett-Packard Development Company, L.P. | Integrated system and method for transversal enhanced Raman Spectroscopy |
| JP4515949B2 (ja) * | 2005-03-31 | 2010-08-04 | 株式会社東芝 | 面型光半導体素子 |
| US7629661B2 (en) * | 2006-02-10 | 2009-12-08 | Noble Peak Vision Corp. | Semiconductor devices with photoresponsive components and metal silicide light blocking structures |
| JP2007234824A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | 垂直共振器型面発光レーザ |
| US7805826B1 (en) * | 2006-07-06 | 2010-10-05 | Hewlett-Packard Development Company, L.P. | Fabrication of slot waveguide |
| US7627017B2 (en) * | 2006-08-25 | 2009-12-01 | Stc. Unm | Laser amplifier and method of making the same |
| CN101535859B (zh) * | 2006-09-13 | 2012-05-02 | 埃迪斯科文大学 | 光学连接组件 |
| US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
| JP5300344B2 (ja) * | 2007-07-06 | 2013-09-25 | キヤノン株式会社 | 光検出素子及び撮像素子、光検出方法及び撮像方法 |
| JP4911774B2 (ja) * | 2007-07-25 | 2012-04-04 | パナソニック株式会社 | 光送受信装置及びそれを用いた光通信システム |
| JP2009158955A (ja) * | 2007-12-06 | 2009-07-16 | Rohm Co Ltd | 窒化物半導体レーザダイオード |
| US8617993B2 (en) * | 2010-02-01 | 2013-12-31 | Lam Research Corporation | Method of reducing pattern collapse in high aspect ratio nanostructures |
| US8646949B2 (en) * | 2010-03-03 | 2014-02-11 | LumenFlow Corp. | Constrained folded path resonant white light scintillator |
| WO2013105959A1 (en) * | 2012-01-12 | 2013-07-18 | Hewlett-Packard Development Company, L.P. | Integrated sub-wavelength grating system |
| CN103999304A (zh) * | 2012-01-18 | 2014-08-20 | 惠普发展公司，有限责任合伙企业 | 集成亚波长光栅元件 |
| KR20130085763A (ko) * | 2012-01-20 | 2013-07-30 | 삼성전자주식회사 | 광 집적 회로용 혼성 레이저 광원 |
| TW201504599A (zh) * | 2013-05-30 | 2015-02-01 | Univ California | 具有高對比光柵及可作爲雙重用途之高對比光柵垂直腔表面發射雷射檢測器之二維週期結構的極化無關光檢測器 |
| US10826274B2 (en) | 2018-02-12 | 2020-11-03 | Lumentum Operations Llc | Grating structure for surface-emitting laser |
| WO2020014561A1 (en) * | 2018-07-13 | 2020-01-16 | The Government of the United State of America, as represented by the Secretary of the Navy | Highly stable semiconductor lasers and sensors for iii-v and silicon photonic integrated circuits |
| US10818807B2 (en) * | 2019-01-21 | 2020-10-27 | Globalfoundries Inc. | Semiconductor detectors integrated with Bragg reflectors |
| US11437785B2 (en) * | 2019-09-23 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | VCSEL with self-aligned microlens to improve beam divergence |
| CN110676689A (zh) * | 2019-10-12 | 2020-01-10 | 长春理工大学 | 一种垂直腔面发射半导体激光器及其制备方法 |
| US11340403B2 (en) * | 2020-03-03 | 2022-05-24 | Globalfoundries U.S. Inc. | Photonic component with distributed Bragg reflectors |
| US12149049B2 (en) * | 2020-12-31 | 2024-11-19 | Win Semiconductors Corp. | Vertical-cavity surface-emitting laser and method for forming the same |
| US20240186766A1 (en) * | 2022-10-19 | 2024-06-06 | Ii-Vi Delaware, Inc. | Polarized/lensed back-side emitting (bse) vertical-cavity surface-emitting laser (vcsel) |
| CN120821012B (zh) * | 2025-09-17 | 2025-12-02 | 北京阿法龙科技有限公司 | 基于纳米压印的超表面光栅结构、其制造方法及系统 |
Family Cites Families (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1108902A (en) | 1978-06-15 | 1981-09-15 | R. Ian Macdonald | Wavelength selective optical coupler |
| US4317085A (en) | 1979-09-12 | 1982-02-23 | Xerox Corporation | Channeled mesa laser |
| JPS60123084A (ja) | 1983-12-08 | 1985-07-01 | Matsushita Electric Ind Co Ltd | 半導体光発生装置 |
| US4660207A (en) | 1984-11-21 | 1987-04-21 | Northern Telecom Limited | Surface-emitting light emitting device |
| US4784722A (en) | 1985-01-22 | 1988-11-15 | Massachusetts Institute Of Technology | Method forming surface emitting diode laser |
| GB2203891A (en) | 1987-04-21 | 1988-10-26 | Plessey Co Plc | Semiconductor diode laser array |
| JPS63318195A (ja) | 1987-06-19 | 1988-12-27 | Agency Of Ind Science & Technol | 横方向埋め込み型面発光レ−ザ |
| US4885592A (en) | 1987-12-28 | 1989-12-05 | Kofol J Stephen | Electronically steerable antenna |
| US4904045A (en) * | 1988-03-25 | 1990-02-27 | American Telephone And Telegraph Company | Grating coupler with monolithically integrated quantum well index modulator |
| JPH0254981A (ja) | 1988-08-20 | 1990-02-23 | Fujitsu Ltd | 面発光レーザ及びレーザアレイ |
| US4901327A (en) | 1988-10-24 | 1990-02-13 | General Dynamics Corporation, Electronics Division | Transverse injection surface emitting laser |
| US4943970A (en) | 1988-10-24 | 1990-07-24 | General Dynamics Corporation, Electronics Division | Surface emitting laser |
| US4956844A (en) | 1989-03-17 | 1990-09-11 | Massachusetts Institute Of Technology | Two-dimensional surface-emitting laser array |
| US5031187A (en) | 1990-02-14 | 1991-07-09 | Bell Communications Research, Inc. | Planar array of vertical-cavity, surface-emitting lasers |
| US5204871A (en) | 1990-03-29 | 1993-04-20 | Larkins Eric C | Bistable optical laser based on a heterostructure pnpn thyristor |
| US5115442A (en) | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
| US5034958A (en) | 1990-04-19 | 1991-07-23 | Bell Communications Research, Inc. | Front-surface emitting diode laser |
| US5052016A (en) | 1990-05-18 | 1991-09-24 | University Of New Mexico | Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser |
| US5056098A (en) | 1990-07-05 | 1991-10-08 | At&T Bell Laboratories | Vertical cavity laser with mirror having controllable reflectivity |
| US5158908A (en) | 1990-08-31 | 1992-10-27 | At&T Bell Laboratories | Distributed bragg reflectors and devices incorporating same |
| US5237581A (en) | 1990-11-14 | 1993-08-17 | Nec Corporation | Semiconductor multilayer reflector and light emitting device with the same |
| US5216263A (en) | 1990-11-29 | 1993-06-01 | Xerox Corporation | High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays |
| US5062115A (en) | 1990-12-28 | 1991-10-29 | Xerox Corporation | High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays |
| US5140605A (en) | 1991-06-27 | 1992-08-18 | Xerox Corporation | Thermally stabilized diode laser structure |
| US5216680A (en) | 1991-07-11 | 1993-06-01 | Board Of Regents, The University Of Texas System | Optical guided-mode resonance filter |
| US5258990A (en) | 1991-11-07 | 1993-11-02 | The United States Of America As Represented By The Secretary Of The United States Department Of Energy | Visible light surface emitting semiconductor laser |
| US5404373A (en) | 1991-11-08 | 1995-04-04 | University Of New Mexico | Electro-optical device |
| US5325386A (en) | 1992-04-21 | 1994-06-28 | Bandgap Technology Corporation | Vertical-cavity surface emitting laser assay display system |
| JP3206097B2 (ja) | 1992-04-22 | 2001-09-04 | セイコーエプソン株式会社 | 面発光型半導体レーザ |
| US5245622A (en) | 1992-05-07 | 1993-09-14 | Bandgap Technology Corporation | Vertical-cavity surface-emitting lasers with intra-cavity structures |
| US5285466A (en) | 1992-05-20 | 1994-02-08 | Wisconsin Alumni Research Foundation | Feedback mechanism for vertical cavity surface emitting lasers |
| US5293392A (en) | 1992-07-31 | 1994-03-08 | Motorola, Inc. | Top emitting VCSEL with etch stop layer |
| US5317587A (en) | 1992-08-06 | 1994-05-31 | Motorola, Inc. | VCSEL with separate control of current distribution and optical mode |
| JPH0669585A (ja) | 1992-08-12 | 1994-03-11 | Fujitsu Ltd | 面発光半導体レーザ及びその製造方法 |
| US5363397A (en) | 1992-10-29 | 1994-11-08 | Internatioal Business Machines Corporation | Integrated short cavity laser with bragg mirrors |
| US5428634A (en) | 1992-11-05 | 1995-06-27 | The United States Of America As Represented By The United States Department Of Energy | Visible light emitting vertical cavity surface emitting lasers |
| DE4240706A1 (de) | 1992-12-03 | 1994-06-09 | Siemens Ag | Oberflächenemittierende Laserdiode |
| US5331654A (en) | 1993-03-05 | 1994-07-19 | Photonics Research Incorporated | Polarized surface-emitting laser |
| US5416044A (en) | 1993-03-12 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for producing a surface-emitting laser |
| US5351256A (en) | 1993-04-28 | 1994-09-27 | The United States Of America As Represented By The United States Department Of Energy | Electrically injected visible vertical cavity surface emitting laser diodes |
| US5359618A (en) | 1993-06-01 | 1994-10-25 | Motorola, Inc. | High efficiency VCSEL and method of fabrication |
| US5359447A (en) | 1993-06-25 | 1994-10-25 | Hewlett-Packard Company | Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes |
| US5446754A (en) | 1993-11-05 | 1995-08-29 | Photonics Research Incorporated | Phased array semiconductor laser |
| US5475701A (en) | 1993-12-29 | 1995-12-12 | Honeywell Inc. | Integrated laser power monitor |
| KR0132018B1 (ko) | 1994-01-27 | 1998-04-14 | 김만제 | 세원형 그레이팅 표면 방출형 레이저 다이오드 |
| US5513202A (en) | 1994-02-25 | 1996-04-30 | Matsushita Electric Industrial Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser |
| US5606572A (en) | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
| US6064783A (en) * | 1994-05-25 | 2000-05-16 | Congdon; Philip A. | Integrated laser and coupled waveguide |
| US5557626A (en) | 1994-06-15 | 1996-09-17 | Motorola | Patterned mirror VCSEL with adjustable selective etch region |
| US5778018A (en) | 1994-10-13 | 1998-07-07 | Nec Corporation | VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices |
| US5530715A (en) | 1994-11-29 | 1996-06-25 | Motorola, Inc. | Vertical cavity surface emitting laser having continuous grading |
| US5568499A (en) | 1995-04-07 | 1996-10-22 | Sandia Corporation | Optical device with low electrical and thermal resistance bragg reflectors |
| US5598300A (en) | 1995-06-05 | 1997-01-28 | Board Of Regents, The University Of Texas System | Efficient bandpass reflection and transmission filters with low sidebands based on guided-mode resonance effects |
| US5978401A (en) | 1995-10-25 | 1999-11-02 | Honeywell Inc. | Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver |
| US5727013A (en) | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
| FR2741483B1 (fr) | 1995-11-21 | 1998-01-02 | Thomson Csf | Dispositif optoelectronique a puits quantiques |
| US5903590A (en) | 1996-05-20 | 1999-05-11 | Sandia Corporation | Vertical-cavity surface-emitting laser device |
| US5940422A (en) | 1996-06-28 | 1999-08-17 | Honeywell Inc. | Laser with an improved mode control |
| US5774487A (en) | 1996-10-16 | 1998-06-30 | Honeywell Inc. | Filamented multi-wavelength vertical-cavity surface emitting laser |
| US5835521A (en) * | 1997-02-10 | 1998-11-10 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
| US6055262A (en) * | 1997-06-11 | 2000-04-25 | Honeywell Inc. | Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| US6064683A (en) | 1997-12-12 | 2000-05-16 | Honeywell Inc. | Bandgap isolated light emitter |
| US6330388B1 (en) * | 1999-01-27 | 2001-12-11 | Northstar Photonics, Inc. | Method and apparatus for waveguide optics and devices |
-
2000
- 2000-12-29 US US09/751,422 patent/US6782027B2/en not_active Expired - Lifetime
-
2001
- 2001-12-18 JP JP2002560248A patent/JP2004521491A/ja active Pending
- 2001-12-18 AT AT01994296T patent/ATE320671T1/de not_active IP Right Cessation
- 2001-12-18 WO PCT/US2001/049089 patent/WO2002060024A2/en not_active Ceased
- 2001-12-18 EP EP01994296A patent/EP1362396B1/en not_active Expired - Lifetime
- 2001-12-18 DE DE60118035T patent/DE60118035T2/de not_active Expired - Lifetime
- 2001-12-18 KR KR10-2003-7008907A patent/KR20030068573A/ko not_active Ceased
- 2001-12-28 TW TW090132816A patent/TW552750B/zh not_active IP Right Cessation
-
2004
- 2004-07-06 US US10/884,895 patent/US7288421B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030068573A (ko) | 2003-08-21 |
| US20040248331A1 (en) | 2004-12-09 |
| JP2004521491A (ja) | 2004-07-15 |
| US20030103542A1 (en) | 2003-06-05 |
| ATE320671T1 (de) | 2006-04-15 |
| EP1362396A2 (en) | 2003-11-19 |
| HK1061609A1 (en) | 2004-09-24 |
| US7288421B2 (en) | 2007-10-30 |
| DE60118035D1 (de) | 2006-05-11 |
| US6782027B2 (en) | 2004-08-24 |
| WO2002060024A2 (en) | 2002-08-01 |
| WO2002060024A3 (en) | 2003-01-16 |
| EP1362396B1 (en) | 2006-03-15 |
| DE60118035T2 (de) | 2006-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW552750B (en) | Resonant reflector for use with optoelectronic devices | |
| US6836501B2 (en) | Resonant reflector for increased wavelength and polarization control | |
| US7496123B2 (en) | VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device | |
| US6148016A (en) | Integrated semiconductor lasers and photodetectors | |
| Sugihwo et al. | Micromachined widely tunable vertical cavity laser diodes | |
| US6055262A (en) | Resonant reflector for improved optoelectronic device performance and enhanced applicability | |
| EP1352455B1 (en) | Spatially modulated reflector for an optoelectronic device | |
| US20150099317A1 (en) | Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser | |
| US8455279B2 (en) | Surface gratings on VCSELS for polarization pinning | |
| US20150063387A1 (en) | High brightness pulsed vcsel sources | |
| US8031755B2 (en) | Surface emitting semiconductor laser and method for fabricating the same | |
| TW201201470A (en) | Multimode vertical-cavity surface-emitting laser arrays | |
| TWI227799B (en) | Resonant reflector for increased wavelength and polarization control | |
| WO2025118764A1 (zh) | 增透型垂直腔面发射激光器及芯片 | |
| US20040125840A1 (en) | Oxide-confined VCSEL device and the method for making the same | |
| CN112103767B (zh) | 一种垂直腔面发射激光器及其制备方法 | |
| US8270448B2 (en) | Surface emitting semiconductor laser | |
| JP4246942B2 (ja) | 波長変換用光学サブアセンブリ | |
| JP2007150193A (ja) | 半導体発光装置 | |
| CN111313234A (zh) | 一种垂直腔面发射激光器阵列及其制造方法与应用 | |
| CN111224319A (zh) | 有中空发光区的垂直腔面发射激光器及其制造方法和应用 | |
| JP2006237648A (ja) | 面発光型半導体レーザ | |
| JP2011228576A (ja) | 半導体レーザ素子 | |
| JP2011243650A (ja) | 半導体レーザ素子 | |
| JP2005347715A (ja) | 面発光レーザおよびこれを用いた光学ユニット、並びにこれらを用いた光学モジュール |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |