JP2004521489A - 変性長波長高速フォトダイオード - Google Patents

変性長波長高速フォトダイオード Download PDF

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Publication number
JP2004521489A
JP2004521489A JP2002558345A JP2002558345A JP2004521489A JP 2004521489 A JP2004521489 A JP 2004521489A JP 2002558345 A JP2002558345 A JP 2002558345A JP 2002558345 A JP2002558345 A JP 2002558345A JP 2004521489 A JP2004521489 A JP 2004521489A
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JP
Japan
Prior art keywords
layer
semiconductor device
substrate
lattice constant
forming
Prior art date
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JP2002558345A
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English (en)
Japanese (ja)
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JP2004521489A5 (enExample
Inventor
ジョンソン，ラルフ・エイチ
ビアード，ジェイムズ・アール
グエンター，ジェイムズ・ケイ
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Honeywell International Inc
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Honeywell International Inc
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Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2004521489A publication Critical patent/JP2004521489A/ja
Publication of JP2004521489A5 publication Critical patent/JP2004521489A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP2002558345A 2001-01-22 2002-01-22 変性長波長高速フォトダイオード Withdrawn JP2004521489A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/766,797 US6558973B2 (en) 2001-01-22 2001-01-22 Metamorphic long wavelength high-speed photodiode
PCT/US2002/001969 WO2002058162A2 (en) 2001-01-22 2002-01-22 Metamorphic long wavelength high-speed photodiode

Publications (2)

Publication Number Publication Date
JP2004521489A true JP2004521489A (ja) 2004-07-15
JP2004521489A5 JP2004521489A5 (enExample) 2005-12-22

Family

ID=25077568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002558345A Withdrawn JP2004521489A (ja) 2001-01-22 2002-01-22 変性長波長高速フォトダイオード

Country Status (6)

Country Link
US (2) US6558973B2 (enExample)
EP (1) EP1354363A2 (enExample)
JP (1) JP2004521489A (enExample)
AU (1) AU2002248380A1 (enExample)
CA (1) CA2435607A1 (enExample)
WO (1) WO2002058162A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630779A (zh) * 2018-05-04 2018-10-09 中国电子科技集团公司第十三研究所 碳化硅探测器及其制备方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780703B2 (en) * 2002-08-27 2004-08-24 Freescale Semiconductor, Inc. Method for forming a semiconductor device
US7326970B2 (en) * 2005-03-11 2008-02-05 The Boeing Company Metamorphic avalanche photodetector
WO2007039891A2 (en) * 2005-10-04 2007-04-12 Passave Ltd. Burst mode pin diode for passive optical networks (pon) applications
JP2011176552A (ja) * 2010-02-24 2011-09-08 Renesas Electronics Corp 光増幅回路及びフォトカプラ
EP2909601B1 (en) 2012-10-16 2019-09-11 Abbott Laboratories Method of increasing the debye length on a sensor surface within a sample solution and corresponding computer readable strorage medium
WO2022256847A1 (en) * 2021-06-04 2022-12-08 Alliance For Sustainable Energy, Llc CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GaAs BY HYDRIDE VAPOR PHASE EPITAXY
US12437954B2 (en) 2022-11-02 2025-10-07 L3Harris Technologies, Inc. Substrate stack epitaxies for photocathodes for extended wavelengths
US12308198B2 (en) 2022-11-22 2025-05-20 L3Harris Technologies, Inc. Lattice matched photocathodes for extended wavelengths

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US3936856A (en) * 1974-05-28 1976-02-03 International Business Machines Corporation Space-charge-limited integrated circuit structure
EP0133342B1 (en) * 1983-06-24 1989-11-29 Nec Corporation A superlattice type semiconductor structure having a high carrier density
US4607272A (en) * 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
US4558336A (en) * 1984-03-02 1985-12-10 The United States Of America As Represented By The Secretary Of The Army MBE Growth technique for matching superlattices grown on GaAs substrates
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US4926226A (en) * 1988-09-06 1990-05-15 General Motors Corporation Magnetic field sensors
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5148267A (en) * 1989-09-08 1992-09-15 Hewlett-Packard Company Double heterostructure step recovery diode with internal drift field
DE19515667A1 (de) * 1995-04-28 1996-10-31 Daimler Benz Ag Halbleiteranordnung
US5969385A (en) * 1995-08-17 1999-10-19 Northrop Grumman Corporation Ultra-low power-delay product NNN/PPP logic devices
US5770868A (en) * 1995-11-08 1998-06-23 Martin Marietta Corporation GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets
FR2753577B1 (fr) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
US5877519A (en) * 1997-03-26 1999-03-02 Picolight Incoporated Extended wavelength opto-electronic devices
US5952701A (en) * 1997-08-18 1999-09-14 National Semiconductor Corporation Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value
FR2768556A1 (fr) * 1997-09-17 1999-03-19 Pigogiga Sa Composant semiconducteur iii-v a heterojonction
US20010042503A1 (en) * 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
CN1347581A (zh) * 1999-03-26 2002-05-01 松下电器产业株式会社 带有应变补偿层的半导体结构及其制备方法
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630779A (zh) * 2018-05-04 2018-10-09 中国电子科技集团公司第十三研究所 碳化硅探测器及其制备方法

Also Published As

Publication number Publication date
AU2002248380A1 (en) 2002-07-30
US20020110946A1 (en) 2002-08-15
WO2002058162A2 (en) 2002-07-25
US20030215971A1 (en) 2003-11-20
US7009224B2 (en) 2006-03-07
WO2002058162A3 (en) 2003-08-14
US6558973B2 (en) 2003-05-06
EP1354363A2 (en) 2003-10-22
CA2435607A1 (en) 2002-07-25

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