CA2435607A1 - Metamorphic long wavelength high-speed photodiode - Google Patents
Metamorphic long wavelength high-speed photodiode Download PDFInfo
- Publication number
- CA2435607A1 CA2435607A1 CA002435607A CA2435607A CA2435607A1 CA 2435607 A1 CA2435607 A1 CA 2435607A1 CA 002435607 A CA002435607 A CA 002435607A CA 2435607 A CA2435607 A CA 2435607A CA 2435607 A1 CA2435607 A1 CA 2435607A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- semiconductor device
- substrate
- lattice constant
- grading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 89
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000007943 implant Substances 0.000 abstract description 7
- 239000002019 doping agent Substances 0.000 abstract description 2
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 16
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- -1 however Chemical compound 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Light Receiving Elements (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/766,797 | 2001-01-22 | ||
| US09/766,797 US6558973B2 (en) | 2001-01-22 | 2001-01-22 | Metamorphic long wavelength high-speed photodiode |
| PCT/US2002/001969 WO2002058162A2 (en) | 2001-01-22 | 2002-01-22 | Metamorphic long wavelength high-speed photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2435607A1 true CA2435607A1 (en) | 2002-07-25 |
Family
ID=25077568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002435607A Abandoned CA2435607A1 (en) | 2001-01-22 | 2002-01-22 | Metamorphic long wavelength high-speed photodiode |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6558973B2 (enExample) |
| EP (1) | EP1354363A2 (enExample) |
| JP (1) | JP2004521489A (enExample) |
| AU (1) | AU2002248380A1 (enExample) |
| CA (1) | CA2435607A1 (enExample) |
| WO (1) | WO2002058162A2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6780703B2 (en) * | 2002-08-27 | 2004-08-24 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device |
| US7326970B2 (en) * | 2005-03-11 | 2008-02-05 | The Boeing Company | Metamorphic avalanche photodetector |
| WO2007039891A2 (en) * | 2005-10-04 | 2007-04-12 | Passave Ltd. | Burst mode pin diode for passive optical networks (pon) applications |
| JP2011176552A (ja) * | 2010-02-24 | 2011-09-08 | Renesas Electronics Corp | 光増幅回路及びフォトカプラ |
| EP2909601B1 (en) | 2012-10-16 | 2019-09-11 | Abbott Laboratories | Method of increasing the debye length on a sensor surface within a sample solution and corresponding computer readable strorage medium |
| CN108630779B (zh) * | 2018-05-04 | 2019-12-17 | 中国电子科技集团公司第十三研究所 | 碳化硅探测器及其制备方法 |
| WO2022256847A1 (en) * | 2021-06-04 | 2022-12-08 | Alliance For Sustainable Energy, Llc | CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GaAs BY HYDRIDE VAPOR PHASE EPITAXY |
| US12437954B2 (en) | 2022-11-02 | 2025-10-07 | L3Harris Technologies, Inc. | Substrate stack epitaxies for photocathodes for extended wavelengths |
| US12308198B2 (en) | 2022-11-22 | 2025-05-20 | L3Harris Technologies, Inc. | Lattice matched photocathodes for extended wavelengths |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3936856A (en) * | 1974-05-28 | 1976-02-03 | International Business Machines Corporation | Space-charge-limited integrated circuit structure |
| EP0133342B1 (en) * | 1983-06-24 | 1989-11-29 | Nec Corporation | A superlattice type semiconductor structure having a high carrier density |
| US4607272A (en) * | 1983-10-06 | 1986-08-19 | The United States Of America As Represented By The United States Department Of Energy | Electro-optical SLS devices for operating at new wavelength ranges |
| US4558336A (en) * | 1984-03-02 | 1985-12-10 | The United States Of America As Represented By The Secretary Of The Army | MBE Growth technique for matching superlattices grown on GaAs substrates |
| US4807006A (en) * | 1987-06-19 | 1989-02-21 | International Business Machines Corporation | Heterojunction interdigitated schottky barrier photodetector |
| US4926226A (en) * | 1988-09-06 | 1990-05-15 | General Motors Corporation | Magnetic field sensors |
| US5204284A (en) * | 1989-01-19 | 1993-04-20 | Hewlett-Packard Company | Method of making a high band-gap opto-electronic device |
| US5148267A (en) * | 1989-09-08 | 1992-09-15 | Hewlett-Packard Company | Double heterostructure step recovery diode with internal drift field |
| DE19515667A1 (de) * | 1995-04-28 | 1996-10-31 | Daimler Benz Ag | Halbleiteranordnung |
| US5969385A (en) * | 1995-08-17 | 1999-10-19 | Northrop Grumman Corporation | Ultra-low power-delay product NNN/PPP logic devices |
| US5770868A (en) * | 1995-11-08 | 1998-06-23 | Martin Marietta Corporation | GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets |
| FR2753577B1 (fr) * | 1996-09-13 | 1999-01-08 | Alsthom Cge Alcatel | Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede |
| US5877519A (en) * | 1997-03-26 | 1999-03-02 | Picolight Incoporated | Extended wavelength opto-electronic devices |
| US5952701A (en) * | 1997-08-18 | 1999-09-14 | National Semiconductor Corporation | Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value |
| FR2768556A1 (fr) * | 1997-09-17 | 1999-03-19 | Pigogiga Sa | Composant semiconducteur iii-v a heterojonction |
| US20010042503A1 (en) * | 1999-02-10 | 2001-11-22 | Lo Yu-Hwa | Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates |
| CN1347581A (zh) * | 1999-03-26 | 2002-05-01 | 松下电器产业株式会社 | 带有应变补偿层的半导体结构及其制备方法 |
| US6320212B1 (en) * | 1999-09-02 | 2001-11-20 | Hrl Laboratories, Llc. | Superlattice fabrication for InAs/GaSb/AISb semiconductor structures |
-
2001
- 2001-01-22 US US09/766,797 patent/US6558973B2/en not_active Expired - Lifetime
-
2002
- 2002-01-22 AU AU2002248380A patent/AU2002248380A1/en not_active Abandoned
- 2002-01-22 EP EP02717369A patent/EP1354363A2/en not_active Withdrawn
- 2002-01-22 JP JP2002558345A patent/JP2004521489A/ja not_active Withdrawn
- 2002-01-22 WO PCT/US2002/001969 patent/WO2002058162A2/en not_active Ceased
- 2002-01-22 CA CA002435607A patent/CA2435607A1/en not_active Abandoned
-
2003
- 2003-04-14 US US10/413,186 patent/US7009224B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002248380A1 (en) | 2002-07-30 |
| US20020110946A1 (en) | 2002-08-15 |
| WO2002058162A2 (en) | 2002-07-25 |
| JP2004521489A (ja) | 2004-07-15 |
| US20030215971A1 (en) | 2003-11-20 |
| US7009224B2 (en) | 2006-03-07 |
| WO2002058162A3 (en) | 2003-08-14 |
| US6558973B2 (en) | 2003-05-06 |
| EP1354363A2 (en) | 2003-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |