CN108630779A - 碳化硅探测器及其制备方法 - Google Patents

碳化硅探测器及其制备方法 Download PDF

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CN108630779A
CN108630779A CN201810421559.XA CN201810421559A CN108630779A CN 108630779 A CN108630779 A CN 108630779A CN 201810421559 A CN201810421559 A CN 201810421559A CN 108630779 A CN108630779 A CN 108630779A
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silicon carbide
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doping concentration
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周幸叶
冯志红
吕元杰
谭鑫
王元刚
宋旭波
李佳
房玉龙
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CETC 13 Research Institute
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Abstract

本发明适用于半导体技术领域，提供了碳化硅探测器及其制备方法，碳化硅探测器包括：晶片，所述晶片从下至上依次为衬底、碳化硅P+层、N型碳化硅插入层、N+型碳化硅倍增层、N型碳化硅吸收层和碳化硅N+层；所述N型碳化硅插入层的掺杂浓度从下至上递增，所述N型碳化硅吸收层的掺杂浓度从下至上递减；所述晶片上刻蚀有台面，所述台面刻蚀至所述碳化硅P+层上表面；所述台面上表面设有N型电极，非台面区的上表面设有P型电极。本发明能够降低器件的暗电流，进而提高器件的信噪比，并保证了较高的量子效率。

Description

碳化硅探测器及其制备方法
技术领域
本发明属于半导体技术领域，尤其涉及一种碳化硅探测器及其制备方法。
背景技术
由于大气中臭氧和其它分子的吸收与散射作用，波长在100纳米至280纳米范围内的紫外辐射在地面上几乎不存在，因此，将该日盲区波段作为响应波段的紫外探测器，具有自然光辐射背景干扰小、虚假预警率低等优点，在紫外预警、紫外通信、紫外天文等领域有着重要的应用前景。
以氮化镓(GaN)和碳化硅(SiC)为代表的宽禁带半导体紫外探测器，对可见光不响应，具有天然的可见光盲特性。SiC材料相对GaN更加成熟，具有更低的缺陷密度，是目前制备紫外光电探测器的优选材料。
碳化硅紫外光电探测器具有很多结构，例如MSM结构、肖特基势垒结构、PN结构、PIN结构、吸收倍增分离(SAM)结构等。其中，SAM结构的碳化硅紫外光电探测器因其吸收层与倍增层分离而具有高增益、高响应度、低工作电压、低过载噪声等优点，但是，SAM结构由于高掺杂浓度PN结的隧穿效应，导致器件在击穿电压附近的暗电流急剧增大，从而使得碳化硅紫外光电探测器的信噪比降低。
发明内容
有鉴于此，本发明实施例提供了一种碳化硅探测器及其制备方法，以解决现有技术中吸收倍增分离结构的碳化硅紫外光电探测器在击穿电压附近的暗电流急剧大，导致器件的信噪比降低的问题。
本发明实施例的第一方面提供了一种碳化硅探测器方法，包括：晶片，所述晶片从下至上依次为衬底、碳化硅P+层、N型碳化硅插入层、N+型碳化硅倍增层、N型碳化硅吸收层和碳化硅N+层；所述N型碳化硅插入层的掺杂浓度从下至上递增，所述N型碳化硅吸收层的掺杂浓度从下至上递减；所述晶片上刻蚀有台面，所述台面刻蚀至所述碳化硅P+层上表面；所述台面的上表面设有N型电极，非台面区的上表面设有P型电极，所述非台面区为所述晶片的除台面区以外的区域。
可选的，所述N型碳化硅插入层的掺杂浓度从下至上线性递增；或
所述N型碳化硅插入层的掺杂浓度从下至上呈抛物线形式递增；或
所述N型碳化硅插入层的掺杂浓度从下至上阶段性递增。
可选的，所述N型碳化硅吸收层的掺杂浓度从下至上线性递减；或
所述N型碳化硅吸收层的掺杂浓度从下至上呈抛物线形式递减；或
所述N型碳化硅吸收层的掺杂浓度从下至上阶段性递减。
可选的，所述台面除N型电极区以外的区域上表面设有增透膜层。
可选的，所述台面的侧面和所述非台面区除P型电极区以外区域的上表面设有钝化层。
可选的，所述台面为倾斜预设倾斜角度的台面。
可选的，所述N型碳化硅插入层的掺杂浓度为1015cm-3至1019cm-3，所述N型碳化硅插入层的厚度为0.1微米至1微米。
可选的，所述N型碳化硅吸收层的掺杂浓度为1018cm-3至5×1019cm-3，所述N型碳化硅吸收层的厚度为0.5微米至2微米。
可选的，所述碳化硅P+层的掺杂浓度为1018cm-3至1020cm-3，所述碳化硅P+层的厚度为1微米至3微米；
所述N+型碳化硅倍增层的掺杂浓度为1018cm-3至5×1019cm-3，所述N+型碳化硅倍增层的厚度为0.1微米至0.3微米；
所述碳化硅N+层的掺杂浓度为1018cm-3至1020cm-3，所述碳化硅N+层的厚度为0.03微米至0.3微米。
本发明实施例的第二方面提供了一种碳化硅探测器的制备方法，包括：
在晶片上刻蚀台面，所述晶片从下至上依次为衬底、碳化硅P+层、N型碳化硅插入层、N+型碳化硅倍增层、N型碳化硅吸收层和碳化硅N+层；所述碳化硅插入层的掺杂浓度从下至上递增，所述碳化硅吸收层的掺杂浓度从下至上递减，所述台面刻蚀至所述碳化硅P+层上表面；
在所述台面的上表面制备N型电极；
在非台面区的上表面制备P型电极；所述非台面区为所述晶片的除台面区以外的区域。
本发明实施例与现有技术相比存在的有益效果是：本发明实施例通过在碳化硅P+层和N+型碳化硅倍增层之间插入掺杂浓度缓变的N型碳化硅插入层，使碳化硅P+层和N+型碳化硅倍增层之间发生隧穿效应的隧穿距离变宽，能够降低因隧穿效应导致的暗电流，并且，采用掺杂浓度缓变的N型碳化硅吸收层能够降低N+型碳化硅倍增层和N型碳化硅吸收层之间的隧穿效应，进一步降器件的暗电流，从而提高器件的信噪比，并保证了较高的量子效率。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的碳化硅探测器结构剖视图；
图2是本发明另一实施例提供的碳化硅探测器结构剖视图；
图3是本发明实施例提供的碳化硅探测器方法的实现流程示意图。
具体实施方式
以下描述中，为了说明而不是为了限定，提出了诸如特定系统结构、技术之类的具体细节，以便透彻理解本发明实施例。然而，本领域的技术人员应当清楚，在没有这些具体细节的其它实施例中也可以实现本发明。在其它情况中，省略对众所周知的系统、装置、电路以及方法的详细说明，以免不必要的细节妨碍本发明的描述。
为了说明本发明所述的技术方案，下面通过具体实施例来进行说明。
实施例一
请参考图1，碳化硅探测器包括：晶片，所述晶片从下至上依次为衬底101、碳化硅P+层102、N型碳化硅插入层103、N+型碳化硅倍增层104、N型碳化硅吸收层105和碳化硅N+层106；所述N型碳化硅插入层103的掺杂浓度从下至上递增，所述N型碳化硅吸收层105的掺杂浓度从下至上递减。所述晶片上刻蚀有台面，所述台面刻蚀至所述碳化硅P+层102上表面。所述台面的上表面设有N型电极107，非台面区的上表面设有P型电极108，所述非台面区为所述晶片的除台面区以外的区域。
在本发明实施例中，碳化硅探测器用于对紫外光的探测，碳化硅探测器的材料为4H-SiC。通过光刻和刻蚀工艺依次刻蚀晶片非台面区的碳化硅N+层106、N型碳化硅吸收层105、N+型碳化硅倍增层104和N型碳化硅插入层103，在晶片上制备台面，其中，台面区为台面所在的区域，非台面区为晶片的除台面区以外的区域。通过蒸发工艺在台面N型电极区上表面和非台面区的P型电极区上表面蒸镀金属，退火处理后形成N型电极107和P型电极108。P型电极108为环绕台面的环形电极。N型电极107和P型电极108的材料为为镍、钛、铝、金中的一种或多种的组合。
可选的，衬底101为碳化硅衬底，通过同质外延工艺在碳化硅衬底上依次生长碳化硅P+层102、N型碳化硅插入层103、N+型碳化硅倍增层104、N型碳化硅吸收层105和碳化硅N+层106，制备出晶片，能够降低衬底101与碳化硅P+层102之间的晶格失配，从而得到高质量的晶片。
在本发明实施例中，在碳化硅P+层102和N+型碳化硅倍增层104之间插入掺杂浓度缓变的N型碳化硅插入层103，使碳化硅P+层102和N+型碳化硅倍增层104之间发生隧穿效应的隧穿距离变宽，能够降低因隧穿效应导致的暗电流，并且，采用掺杂浓度缓变的N型碳化硅吸收层105，能够降低N+型碳化硅倍增层104和N型碳化硅吸收层105之间的隧穿效应，从而进一步降器件的暗电流。
可选的，所述N型碳化硅插入层103的掺杂浓度从下至上线性递增；或所述N型碳化硅插入层103的掺杂浓度从下至上呈抛物线形式递增；或所述N型碳化硅插入层103的掺杂浓度从下至上阶段性递增。
可选的，所述N型碳化硅吸收层105的掺杂浓度从下至上线性递减；或所述N型碳化硅吸收层105的掺杂浓度从下至上呈抛物线形式递减；或所述N型碳化硅吸收层105的掺杂浓度从下至上阶段性递减。可选的，请参考图2，所述台面除N型电极区以外的区域上表面设有增透膜层109。
在本发明实施例中，增透膜层109为氧化硅层、氧化铝层、氧化铬层、氧化钇层和氮化硅层中的一种或两种以上的组合。增透膜层109的厚度为20纳米至2微米。通过外延工艺在晶片的上表面外延增透膜层，通过光刻和刻蚀工艺去除非台面区和N型电极上表面的增透膜层，在台面除N型电极区以外的区域上表面制备出增透膜层109。增透膜层109能够有效抑制入射光在器件表面的反射，提高探测器的响应度。
可选的，请参考图2，所述台面的侧面和所述非台面区除P型电极区以外区域的上表面设有钝化层110。
在本发明实施例中，钝化层110为氧化硅层、氧化铝层、氧化铬层、氧化钇层和氮化硅层中的一种或两种以上的组合。钝化层110的厚度为50纳米至10微米。钝化层110能够有效抑制探测器的漏电流，提高探测器的信噪比。
可选的，所述台面为倾斜预设倾斜角度的台面。
在本发明实施例中，台面为具有预设倾斜角度的圆锥形台面。倾斜预设倾斜角度的台面能够有效抑制器件提前击穿。在制备具有预设倾斜角度的倾斜台面时，通过光刻胶回流工艺进行光刻，在晶片的台面区覆盖具有预设倾斜角度的光刻胶层，再通过刻蚀工艺进行刻蚀。
可选的，所述N型碳化硅插入层103的掺杂浓度为1015cm-3至1019cm-3，所述N型碳化硅插入层103的厚度为0.1微米至1微米；
可选的，所述N型碳化硅吸收层105的掺杂浓度为1018cm-3至5×1019cm-3，所述N型碳化硅吸收层105的厚度为0.5微米至2微米。
可选的，所述碳化硅P+层102的掺杂浓度为1018cm-3至1020cm-3，所述碳化硅P+层102的厚度为1微米至3微米；
所述N+型碳化硅倍增层104的掺杂浓度为1018cm-3至5×1019cm-3，所述N+型碳化硅倍增层104的厚度为0.1微米至0.3微米；
所述碳化硅N+层106的掺杂浓度为1018cm-3至1020cm-3，所述碳化硅N+层106的厚度为0.03微米至0.3微米。
实施例二
请参考图3，碳化硅探测器的制备方法，包括：
步骤S301，在晶片上刻蚀台面，所述晶片从下至上依次为衬底、碳化硅P+层、N型碳化硅插入层、N+型碳化硅倍增层、N型碳化硅吸收层和碳化硅N+层；所述碳化硅插入层的掺杂浓度从下至上递增，所述碳化硅吸收层的掺杂浓度从下至上递减，所述台面刻蚀至碳化硅P+层上表面；
步骤S302，在所述台面的上表面制备N型电极；
步骤S303，在非台面区的上表面制备P型电极；所述非台面区为所述晶片的除台面区以外的区域。
可选的，还包括：在所述台面的侧面和所述非台面区除P型电极区以外的区域上表面制备钝化层。
可选的，还包括：在所述台面除N型电极区以外的区域上表面制备增透膜层。
可选的，所述N型碳化硅插入层的掺杂浓度从下至上线性递增；或
所述N型碳化硅插入层的掺杂浓度从下至上呈抛物线形式递增；或
所述N型碳化硅插入层的掺杂浓度从下至上阶段性递增。
可选的，所述N型碳化硅吸收层的掺杂浓度从下至上线性递减；或
所述N型碳化硅吸收层的掺杂浓度从下至上呈抛物线形式递减；或
所述N型碳化硅吸收层的掺杂浓度从下至上阶段性递减。
可选的，所述台面为倾斜预设倾斜角度的台面。
可选的，所述N型碳化硅插入层的掺杂浓度为1015cm-3至1019cm-3，所述N型碳化硅插入层的厚度为0.1微米至1微米；
可选的，所述N型碳化硅吸收层的掺杂浓度为1018cm-3至5×1019cm-3，所述N型碳化硅吸收层的厚度为0.5微米至2微米。
可选的，所述碳化硅P+层的掺杂浓度为1018cm-3至1020cm-3，所述碳化硅P+层的厚度为1微米至3微米；
所述N+型碳化硅倍增层的掺杂浓度为1018cm-3至5×1019cm-3，所述N+型碳化硅倍增层的厚度为0.1微米至0.3微米；
所述碳化硅N+层的掺杂浓度为1018cm-3至1020cm-3，所述高碳化硅N+层的厚度为0.03微米至0.3微米。
通过上述碳化硅探测器的制备方法制备如本发明实施例一所述的碳化硅探测器，并具有本发明实施例一所具有的有益效果。
应理解，上述实施例中各步骤的序号的大小并不意味着执行顺序的先后，各过程的执行顺序应以其功能和内在逻辑确定，而不应对本发明实施例的实施过程构成任何限定。
以上所述实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围，均应包含在本发明的保护范围之内。

Claims (10)

1.一种碳化硅探测器，其特征在于，包括：晶片，所述晶片从下至上依次为衬底、碳化硅P+层、N型碳化硅插入层、N+型碳化硅倍增层、N型碳化硅吸收层和碳化硅N+层；所述N型碳化硅插入层的掺杂浓度从下至上递增，所述N型碳化硅吸收层的掺杂浓度从下至上递减；所述晶片上刻蚀有台面，所述台面刻蚀至所述碳化硅P+层上表面；所述台面的上表面设有N型电极，非台面区的上表面设有P型电极，所述非台面区为所述晶片的除台面区以外的区域。
2.如权利要求1所述的碳化硅探测器，其特征在于，所述N型碳化硅插入层的掺杂浓度从下至上线性递增；或
所述N型碳化硅插入层的掺杂浓度从下至上呈抛物线形式递增；或
所述N型碳化硅插入层的掺杂浓度从下至上阶段性递增。
3.如权利要求1所述的碳化硅探测器，其特征在于，所述N型碳化硅吸收层的掺杂浓度从下至上线性递减；或
所述N型碳化硅吸收层的掺杂浓度从下至上呈抛物线形式递减；或
所述N型碳化硅吸收层的掺杂浓度从下至上阶段性递减。
4.如权利要求1所述的碳化硅探测器，其特征在于，所述台面除N型电极区以外区域的上表面设有增透膜层。
5.如权利要求1所述的碳化硅探测器，其特征在于，所述台面的侧面和所述非台面区除P型电极区以外区域的上表面设有钝化层。
6.如权利要求1所述的碳化硅探测器，其特征在于，所述台面为倾斜预设倾斜角度的台面。
7.如权利要求1所述的碳化硅探测器，其特征在于，所述N型碳化硅插入层的掺杂浓度为1015cm-3至1019cm-3，所述N型碳化硅插入层的厚度为0.1微米至1微米。
8.如权利要求1所述的碳化硅探测器，其特征在于，所述N型碳化硅吸收层的掺杂浓度为1018cm-3至5×1019cm-3，所述N型碳化硅吸收层的厚度为0.5微米至2微米。
9.如权利要求1至8任一项所述的碳化硅探测器，其特征在于，所述碳化硅P+层的掺杂浓度为1018cm-3至1020cm-3，所述碳化硅P+层的厚度为1微米至3微米；
所述N+型碳化硅倍增层的掺杂浓度为1018cm-3至5×1019cm-3，所述N+型碳化硅倍增层的厚度为0.1微米至0.3微米；
所述碳化硅N+层的掺杂浓度为1018cm-3至1020cm-3，所述碳化硅N+层的厚度为0.03微米至0.3微米。
10.一种碳化硅探测器的制备方法，其特征在于，包括：
在晶片上刻蚀台面，所述晶片从下至上依次为衬底、碳化硅P+层、N型碳化硅插入层、N+型碳化硅倍增层、N型碳化硅吸收层和碳化硅N+层；所述碳化硅插入层的掺杂浓度从下至上递增，所述碳化硅吸收层的掺杂浓度从下至上递减，所述台面刻蚀至所述碳化硅P+层上表面；
在所述台面的上表面制备N型电极；
在非台面区的上表面制备P型电极；所述非台面区为所述晶片的除台面区以外的区域。
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CN110690314A (zh) * 2019-09-05 2020-01-14 中国电子科技集团公司第十三研究所 吸收层与倍增层为分离结构的紫外探测器及其制备方法
CN110690235A (zh) * 2019-09-05 2020-01-14 中国电子科技集团公司第十三研究所 一种探测器阵列芯片及其制备方法
CN112885710A (zh) * 2021-01-15 2021-06-01 广州爱思威科技股份有限公司 半导体的外延片的制备方法及其应用
CN113013278A (zh) * 2021-03-12 2021-06-22 太原理工大学 一种碳化硅基全谱响应光电探测器及其制备方法
CN113013278B (zh) * 2021-03-12 2023-02-03 太原理工大学 一种碳化硅基全谱响应光电探测器及其制备方法

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