JP2004509478A - 半導体レーザ - Google Patents

半導体レーザ Download PDF

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Publication number
JP2004509478A
JP2004509478A JP2002528889A JP2002528889A JP2004509478A JP 2004509478 A JP2004509478 A JP 2004509478A JP 2002528889 A JP2002528889 A JP 2002528889A JP 2002528889 A JP2002528889 A JP 2002528889A JP 2004509478 A JP2004509478 A JP 2004509478A
Authority
JP
Japan
Prior art keywords
layer
laser according
waveguide
thickness
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002528889A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004509478A5 (enExample
Inventor
エルベルト、ゲッツ
トレンクレ、ギュンター
ヴェンツェル、ハンス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2004509478A publication Critical patent/JP2004509478A/ja
Publication of JP2004509478A5 publication Critical patent/JP2004509478A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2002528889A 2000-09-20 2001-09-20 半導体レーザ Pending JP2004509478A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10046580A DE10046580A1 (de) 2000-09-20 2000-09-20 Halbleiter-Laser
PCT/DE2001/003649 WO2002025787A1 (de) 2000-09-20 2001-09-20 Halbleiter-laser

Publications (2)

Publication Number Publication Date
JP2004509478A true JP2004509478A (ja) 2004-03-25
JP2004509478A5 JP2004509478A5 (enExample) 2005-05-19

Family

ID=7656961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002528889A Pending JP2004509478A (ja) 2000-09-20 2001-09-20 半導体レーザ

Country Status (6)

Country Link
US (1) US6961358B2 (enExample)
EP (1) EP1323219B1 (enExample)
JP (1) JP2004509478A (enExample)
DE (3) DE10046580A1 (enExample)
TW (1) TWI289959B (enExample)
WO (1) WO2002025787A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2406968B (en) * 2003-10-11 2006-12-06 Intense Photonics Ltd Control of output beam divergence in a semiconductor waveguide device
TWI290402B (en) * 2003-10-24 2007-11-21 Ind Tech Res Inst Edge-emitting laser with circular beam
JP5095260B2 (ja) * 2006-05-15 2012-12-12 富士通株式会社 半導体発光装置の製造方法
US20080009844A1 (en) * 2006-06-26 2008-01-10 Ingeborg Rolle Device for Laser Surgery
EP2015412B1 (en) * 2007-07-06 2022-03-09 Lumentum Operations LLC Semiconductor laser with narrow beam divergence.
DE102007051315B4 (de) * 2007-09-24 2018-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
DE102007058950A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Wellenleiter
US7830938B2 (en) * 2008-12-15 2010-11-09 Jds Uniphase Corporation Laser diode
DE102011103952B4 (de) * 2011-06-10 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierender Halbleiterlaser
JP6123427B2 (ja) * 2013-03-29 2017-05-10 三菱電機株式会社 半導体レーザ装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07162085A (ja) * 1993-12-10 1995-06-23 Fujitsu Ltd 半導体発光装置
JPH09232692A (ja) * 1996-02-16 1997-09-05 Lucent Technol Inc 半導体レーザ装置
JPH11330551A (ja) * 1998-05-15 1999-11-30 Showa Denko Kk Ｉｉｉ族窒化物半導体結晶体の形成方法およびそれを含む半導体素子
JPH11354865A (ja) * 1998-06-10 1999-12-24 Fujitsu Ltd 光半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680859B2 (ja) * 1984-12-27 1994-10-12 ソニー株式会社 半導体レーザー
US4715672A (en) 1986-01-06 1987-12-29 American Telephone And Telegraph Company Optical waveguide utilizing an antiresonant layered structure
JPH05235470A (ja) * 1992-02-24 1993-09-10 Eastman Kodak Japan Kk レーザダイオード
JPH05275798A (ja) * 1992-03-25 1993-10-22 Eastman Kodak Japan Kk レーザダイオード
US5272711A (en) * 1992-05-12 1993-12-21 Trw Inc. High-power semiconductor laser diode
RO109906B1 (ro) 1994-09-09 1995-06-30 Prahova Iulian Basara Petrescu Dioda laser, de mare putere
US5528616A (en) * 1995-04-24 1996-06-18 International Business Machines Corporation Asymmetric dual waveguide laser
US5606570A (en) * 1995-05-08 1997-02-25 Wisconsin Alumni Research Foundation High power antiguided semiconductor laser with interelement loss
US6031243A (en) * 1996-10-16 2000-02-29 Geoff W. Taylor Grating coupled vertical cavity optoelectronic devices
US5818860A (en) 1996-11-27 1998-10-06 David Sarnoff Research Center, Inc. High power semiconductor laser diode
US6396865B1 (en) * 2000-10-27 2002-05-28 Wisconsin Alumni Research Foundation Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides
GB2371407B (en) * 2001-01-23 2003-07-09 Univ Glasgow Improvements in or relating to lasers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07162085A (ja) * 1993-12-10 1995-06-23 Fujitsu Ltd 半導体発光装置
JPH09232692A (ja) * 1996-02-16 1997-09-05 Lucent Technol Inc 半導体レーザ装置
JPH11330551A (ja) * 1998-05-15 1999-11-30 Showa Denko Kk Ｉｉｉ族窒化物半導体結晶体の形成方法およびそれを含む半導体素子
JPH11354865A (ja) * 1998-06-10 1999-12-24 Fujitsu Ltd 光半導体装置

Also Published As

Publication number Publication date
TWI289959B (en) 2007-11-11
EP1323219A1 (de) 2003-07-02
EP1323219B1 (de) 2004-11-24
US6961358B2 (en) 2005-11-01
DE10046580A1 (de) 2002-04-04
DE20108607U1 (de) 2001-08-30
DE50104634D1 (de) 2004-12-30
WO2002025787A1 (de) 2002-03-28
US20040047378A1 (en) 2004-03-11

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