DE10046580A1 - Halbleiter-Laser - Google Patents

Halbleiter-Laser

Info

Publication number
DE10046580A1
DE10046580A1 DE10046580A DE10046580A DE10046580A1 DE 10046580 A1 DE10046580 A1 DE 10046580A1 DE 10046580 A DE10046580 A DE 10046580A DE 10046580 A DE10046580 A DE 10046580A DE 10046580 A1 DE10046580 A1 DE 10046580A1
Authority
DE
Germany
Prior art keywords
semiconductor laser
waveguide
laser according
active layer
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE10046580A
Other languages
German (de)
English (en)
Inventor
Goetz Erbert
Guenther Traenkle
Hans Wenzel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE10046580A priority Critical patent/DE10046580A1/de
Priority to DE20108607U priority patent/DE20108607U1/de
Priority to TW090122978A priority patent/TWI289959B/zh
Priority to DE50104634T priority patent/DE50104634D1/de
Priority to JP2002528889A priority patent/JP2004509478A/ja
Priority to EP01980186A priority patent/EP1323219B1/de
Priority to PCT/DE2001/003649 priority patent/WO2002025787A1/de
Priority to US10/381,177 priority patent/US6961358B2/en
Publication of DE10046580A1 publication Critical patent/DE10046580A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE10046580A 2000-09-20 2000-09-20 Halbleiter-Laser Pending DE10046580A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE10046580A DE10046580A1 (de) 2000-09-20 2000-09-20 Halbleiter-Laser
DE20108607U DE20108607U1 (de) 2000-09-20 2001-05-22 Halbleiter-Laser
TW090122978A TWI289959B (en) 2000-09-20 2001-09-19 Semiconductor laser
DE50104634T DE50104634D1 (de) 2000-09-20 2001-09-20 Halbleiter-laser
JP2002528889A JP2004509478A (ja) 2000-09-20 2001-09-20 半導体レーザ
EP01980186A EP1323219B1 (de) 2000-09-20 2001-09-20 Halbleiter-laser
PCT/DE2001/003649 WO2002025787A1 (de) 2000-09-20 2001-09-20 Halbleiter-laser
US10/381,177 US6961358B2 (en) 2000-09-20 2001-09-20 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10046580A DE10046580A1 (de) 2000-09-20 2000-09-20 Halbleiter-Laser

Publications (1)

Publication Number Publication Date
DE10046580A1 true DE10046580A1 (de) 2002-04-04

Family

ID=7656961

Family Applications (3)

Application Number Title Priority Date Filing Date
DE10046580A Pending DE10046580A1 (de) 2000-09-20 2000-09-20 Halbleiter-Laser
DE20108607U Expired - Lifetime DE20108607U1 (de) 2000-09-20 2001-05-22 Halbleiter-Laser
DE50104634T Expired - Lifetime DE50104634D1 (de) 2000-09-20 2001-09-20 Halbleiter-laser

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE20108607U Expired - Lifetime DE20108607U1 (de) 2000-09-20 2001-05-22 Halbleiter-Laser
DE50104634T Expired - Lifetime DE50104634D1 (de) 2000-09-20 2001-09-20 Halbleiter-laser

Country Status (6)

Country Link
US (1) US6961358B2 (enExample)
EP (1) EP1323219B1 (enExample)
JP (1) JP2004509478A (enExample)
DE (3) DE10046580A1 (enExample)
TW (1) TWI289959B (enExample)
WO (1) WO2002025787A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051315A1 (de) * 2007-09-24 2009-04-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
US9203216B2 (en) 2013-03-29 2015-12-01 Mitsubishi Electric Corporation Semiconductor laser device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2406968B (en) * 2003-10-11 2006-12-06 Intense Photonics Ltd Control of output beam divergence in a semiconductor waveguide device
TWI290402B (en) * 2003-10-24 2007-11-21 Ind Tech Res Inst Edge-emitting laser with circular beam
JP5095260B2 (ja) * 2006-05-15 2012-12-12 富士通株式会社 半導体発光装置の製造方法
US20080009844A1 (en) * 2006-06-26 2008-01-10 Ingeborg Rolle Device for Laser Surgery
EP2015412B1 (en) * 2007-07-06 2022-03-09 Lumentum Operations LLC Semiconductor laser with narrow beam divergence.
DE102007058950A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Wellenleiter
US7830938B2 (en) * 2008-12-15 2010-11-09 Jds Uniphase Corporation Laser diode
DE102011103952B4 (de) * 2011-06-10 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierender Halbleiterlaser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289484A (en) * 1992-03-25 1994-02-22 Eastman Kodak Company Laser diode
US5815521A (en) * 1996-02-16 1998-09-29 Lucent Technologies Inc. Semiconductor laser with low beam divergence

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680859B2 (ja) * 1984-12-27 1994-10-12 ソニー株式会社 半導体レーザー
US4715672A (en) 1986-01-06 1987-12-29 American Telephone And Telegraph Company Optical waveguide utilizing an antiresonant layered structure
JPH05235470A (ja) * 1992-02-24 1993-09-10 Eastman Kodak Japan Kk レーザダイオード
US5272711A (en) * 1992-05-12 1993-12-21 Trw Inc. High-power semiconductor laser diode
JPH07162085A (ja) * 1993-12-10 1995-06-23 Fujitsu Ltd 半導体発光装置
RO109906B1 (ro) 1994-09-09 1995-06-30 Prahova Iulian Basara Petrescu Dioda laser, de mare putere
US5528616A (en) * 1995-04-24 1996-06-18 International Business Machines Corporation Asymmetric dual waveguide laser
US5606570A (en) * 1995-05-08 1997-02-25 Wisconsin Alumni Research Foundation High power antiguided semiconductor laser with interelement loss
US6031243A (en) * 1996-10-16 2000-02-29 Geoff W. Taylor Grating coupled vertical cavity optoelectronic devices
US5818860A (en) 1996-11-27 1998-10-06 David Sarnoff Research Center, Inc. High power semiconductor laser diode
JP3549728B2 (ja) * 1998-05-15 2004-08-04 昭和電工株式会社 Ｉｉｉ族窒化物半導体結晶体の形成方法およびそれを含む半導体素子
JPH11354865A (ja) * 1998-06-10 1999-12-24 Fujitsu Ltd 光半導体装置
US6396865B1 (en) * 2000-10-27 2002-05-28 Wisconsin Alumni Research Foundation Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides
GB2371407B (en) * 2001-01-23 2003-07-09 Univ Glasgow Improvements in or relating to lasers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289484A (en) * 1992-03-25 1994-02-22 Eastman Kodak Company Laser diode
US5815521A (en) * 1996-02-16 1998-09-29 Lucent Technologies Inc. Semiconductor laser with low beam divergence

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
CORVINI, P.J.: Spectral dependence of propagation loss in InP/InGaAsP antiresonant reflecting waveguides grown by chemical beam epitaxy. In: Appl.Phys. Lett., Vol. 50, No. 6, 1987, S. 307-309 *
JEON, H. *
KOCH, T.L. *
TSANG, W.t. *
u.a.: High-Power Low-Divergence Semiconductor Lasers for GaAs-Based 980-nm and InP-Based 1550-nm Applications. In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, No. 6, 1997, S. 1344-1350 *
u.a.: Three-Core ARROW-Type Diode Laser: Novel High-Power, Single-Mode Device, and Effective Master Oscillator for Flared Antiguided MOPA's. In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 1, No. 2, 1995, S. 129-137 *
ZMUDZINSKI, C. *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051315A1 (de) * 2007-09-24 2009-04-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
US8576889B2 (en) 2007-09-24 2013-11-05 Osram Opto Semiconductors Gmbh Method of producing a radiation-emitting component and radiation-emitting component
DE102007051315B4 (de) 2007-09-24 2018-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
US9203216B2 (en) 2013-03-29 2015-12-01 Mitsubishi Electric Corporation Semiconductor laser device
DE102014204938B4 (de) * 2013-03-29 2020-03-26 Mitsubishi Electric Corporation Halbleiterlaservorrichtung

Also Published As

Publication number Publication date
JP2004509478A (ja) 2004-03-25
TWI289959B (en) 2007-11-11
EP1323219A1 (de) 2003-07-02
EP1323219B1 (de) 2004-11-24
US6961358B2 (en) 2005-11-01
DE20108607U1 (de) 2001-08-30
DE50104634D1 (de) 2004-12-30
WO2002025787A1 (de) 2002-03-28
US20040047378A1 (en) 2004-03-11

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, 93049 REGENSBURG,