DE69123902T2 - Lichtemittierende Vorrichtung unter Ausnutzung der Quantenelektrodynamik im Hohlraum - Google Patents

Lichtemittierende Vorrichtung unter Ausnutzung der Quantenelektrodynamik im Hohlraum

Info

Publication number
DE69123902T2
DE69123902T2 DE69123902T DE69123902T DE69123902T2 DE 69123902 T2 DE69123902 T2 DE 69123902T2 DE 69123902 T DE69123902 T DE 69123902T DE 69123902 T DE69123902 T DE 69123902T DE 69123902 T2 DE69123902 T2 DE 69123902T2
Authority
DE
Germany
Prior art keywords
cavity
light
emitting device
quantum electrodynamics
electrodynamics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69123902T
Other languages
English (en)
Other versions
DE69123902D1 (de
Inventor
Masahiro Okuda
Akira Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69123902D1 publication Critical patent/DE69123902D1/de
Publication of DE69123902T2 publication Critical patent/DE69123902T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1078—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with means to control the spontaneous emission, e.g. reducing or reinjection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE69123902T 1990-08-14 1991-08-13 Lichtemittierende Vorrichtung unter Ausnutzung der Quantenelektrodynamik im Hohlraum Expired - Lifetime DE69123902T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21481290A JP2927908B2 (ja) 1990-08-14 1990-08-14 発光素子

Publications (2)

Publication Number Publication Date
DE69123902D1 DE69123902D1 (de) 1997-02-13
DE69123902T2 true DE69123902T2 (de) 1997-06-26

Family

ID=16661932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123902T Expired - Lifetime DE69123902T2 (de) 1990-08-14 1991-08-13 Lichtemittierende Vorrichtung unter Ausnutzung der Quantenelektrodynamik im Hohlraum

Country Status (3)

Country Link
EP (1) EP0473983B1 (de)
JP (1) JP2927908B2 (de)
DE (1) DE69123902T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5469018A (en) * 1993-07-20 1995-11-21 University Of Georgia Research Foundation, Inc. Resonant microcavity display
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
GB2312783B (en) * 1996-05-01 2000-12-13 Epitaxial Products Internat Lt Opto-electronic device with transparent high lateral conductivity current spreading layer
EP0875946A1 (de) 1997-04-30 1998-11-04 Interuniversitair Micro-Elektronica Centrum Vzw Lichtemittierende Diode mit Mikrohohlraum und Verfahren zu deren Herstellung
EP0877428A3 (de) * 1997-04-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Bauelement für die Emission von elektromagnetischer Strahlung bei einer vorherbestimmten Wellenlänge und dessen Herstellung
CA2242670A1 (en) * 1997-07-14 1999-01-14 Mitel Semiconductor Ab Field modulated vertical cavity surface-emitting laser with internal optical pumping
US6134043A (en) * 1998-08-11 2000-10-17 Massachusetts Institute Of Technology Composite photonic crystals
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6684008B2 (en) 2000-09-01 2004-01-27 The University Of British Columbia Planar photonic bandgap structures for controlling radiation loss
TW595059B (en) * 2002-05-03 2004-06-21 Osram Opto Semiconductors Gmbh Optically pumped semiconductor laser device
JP4162700B2 (ja) * 2007-10-25 2008-10-08 東芝電子エンジニアリング株式会社 半導体発光素子
US10013657B2 (en) * 2016-03-09 2018-07-03 Socpra Sciences Et Génie S.E.C. Periodical modulation of longitudinal coupling strength for quantum non-demolition qubit readout

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2531655B2 (ja) * 1987-01-16 1996-09-04 株式会社日立製作所 半導体装置
JPH0793473B2 (ja) * 1987-10-06 1995-10-09 古河電気工業株式会社 光半導体素子

Also Published As

Publication number Publication date
EP0473983B1 (de) 1997-01-02
EP0473983A2 (de) 1992-03-11
JPH0496389A (ja) 1992-03-27
DE69123902D1 (de) 1997-02-13
JP2927908B2 (ja) 1999-07-28
EP0473983A3 (en) 1992-04-08

Similar Documents

Publication Publication Date Title
FI894095A (fi) Vaermare foer anvaendning i mikrovaogsugnar.
DE69023255D1 (de) Zahnärztlicher Artikel mit lichthärtbarer Paste.
DE69109152T2 (de) Vorrichtung mit Schminkbürsten.
DE69015418T2 (de) Energieversorgung.
DE68913323D1 (de) Antischaum-Zusatzstoffe mit verzögerter Freisetzung.
DE68909164T2 (de) Stromversorgungsgerät.
DE69017080T2 (de) VHF-Gleichstrom-Gleichstrom-Leistungsversorgung.
DE68922417T2 (de) Elektro-optische Vorrichtung.
DE69129218D1 (de) Lichtemittierende Vorrichtung
DE69123902T2 (de) Lichtemittierende Vorrichtung unter Ausnutzung der Quantenelektrodynamik im Hohlraum
DE68910906T2 (de) Leuchtende Vorrichtung.
DE69018507T2 (de) Orthodontische Vorrichtung mit Haken.
DE68921437D1 (de) Elektrolumineszierende Vorrichtung.
DE69102013T2 (de) Handbetätigte Einstellvorrichtung mit entgegengesetzt geneigter Verzahnung.
NO891628D0 (no) Utleveringsanordning.
DE69113551D1 (de) Pindiode mit niedriger Anfangsüberspannung.
DE3883921D1 (de) Vorrichtung mit Membrane.
DE69116409D1 (de) Laservorrichtung mit Mitteln zur Erfassung der Laserleistung
DE68902704D1 (de) Duese mit freiem durchgang.
DE3888575T2 (de) Lichtemittierende Vorrichtung.
DE58903322D1 (de) Thermoplastische formmassen.
DE69022955D1 (de) Leistungszufuhr.
DE69012338D1 (de) Kraftaufnahmevorrichtung.
DE69127302D1 (de) Vorrichtung mit sperrriegel
DE68903214T2 (de) Duesenbeschichtungs vorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition