JP2004507081A - 集積トランジスタ素子 - Google Patents
集積トランジスタ素子 Download PDFInfo
- Publication number
- JP2004507081A JP2004507081A JP2002520272A JP2002520272A JP2004507081A JP 2004507081 A JP2004507081 A JP 2004507081A JP 2002520272 A JP2002520272 A JP 2002520272A JP 2002520272 A JP2002520272 A JP 2002520272A JP 2004507081 A JP2004507081 A JP 2004507081A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- oxide
- effect transistor
- field effect
- enhancement mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 182
- 150000001875 compounds Chemical class 0.000 claims abstract description 101
- 230000005669 field effect Effects 0.000 claims abstract description 85
- XCZLSTLZPIRTRY-UHFFFAOYSA-N oxogallium Chemical compound [Ga]=O XCZLSTLZPIRTRY-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000003870 refractory metal Substances 0.000 claims abstract description 29
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 21
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 17
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 5
- 239000012212 insulator Substances 0.000 claims description 36
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000007943 implant Substances 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 15
- 230000000295 complement effect Effects 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 10
- -1 gallium oxide compound Chemical class 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 150000002927 oxygen compounds Chemical class 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 14
- 150000004706 metal oxides Chemical class 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 70
- 238000005516 engineering process Methods 0.000 description 12
- 230000010354 integration Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 150000002910 rare earth metals Chemical class 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/636,484 US6936900B1 (en) | 2000-05-04 | 2000-08-10 | Integrated transistor devices |
PCT/US2001/025150 WO2002015233A2 (en) | 2000-08-10 | 2001-08-10 | Integrated transistor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004507081A true JP2004507081A (ja) | 2004-03-04 |
JP2004507081A5 JP2004507081A5 (ko) | 2005-03-03 |
Family
ID=24552107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002520272A Pending JP2004507081A (ja) | 2000-08-10 | 2001-08-10 | 集積トランジスタ素子 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1312122A4 (ko) |
JP (1) | JP2004507081A (ko) |
KR (1) | KR20030027017A (ko) |
AU (1) | AU2001288239A1 (ko) |
WO (1) | WO2002015233A2 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006507657A (ja) * | 2002-01-18 | 2006-03-02 | フリースケール セミコンダクター インコーポレイテッド | GaAsをベースとする半導体構造の上に酸化膜層を有する部品及びその形成方法 |
JP2019012827A (ja) * | 2017-06-30 | 2019-01-24 | 国立研究開発法人物質・材料研究機構 | 窒化ガリウム系の半導体装置及びその製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6936900B1 (en) | 2000-05-04 | 2005-08-30 | Osemi, Inc. | Integrated transistor devices |
AU2003217189A1 (en) * | 2002-01-22 | 2003-09-02 | Massachusetts Institute Of Technology | A method of fabrication for iii-v semiconductor surface passivation |
US7187045B2 (en) | 2002-07-16 | 2007-03-06 | Osemi, Inc. | Junction field effect metal oxide compound semiconductor integrated transistor devices |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
US7250627B2 (en) * | 2004-03-12 | 2007-07-31 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
CN116072707A (zh) * | 2023-02-08 | 2023-05-05 | 厦门大学 | 一种含稀土栅介质层的平面型SiC MOSFET及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962883A (en) * | 1994-03-23 | 1999-10-05 | Lucent Technologies Inc. | Article comprising an oxide layer on a GaAs-based semiconductor body |
US5665658A (en) * | 1996-03-21 | 1997-09-09 | Motorola | Method of forming a dielectric layer structure |
US5945718A (en) * | 1998-02-12 | 1999-08-31 | Motorola Inc. | Self-aligned metal-oxide-compound semiconductor device and method of fabrication |
-
2001
- 2001-08-10 AU AU2001288239A patent/AU2001288239A1/en not_active Abandoned
- 2001-08-10 KR KR10-2003-7001947A patent/KR20030027017A/ko not_active Application Discontinuation
- 2001-08-10 JP JP2002520272A patent/JP2004507081A/ja active Pending
- 2001-08-10 WO PCT/US2001/025150 patent/WO2002015233A2/en active Application Filing
- 2001-08-10 EP EP01967960A patent/EP1312122A4/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006507657A (ja) * | 2002-01-18 | 2006-03-02 | フリースケール セミコンダクター インコーポレイテッド | GaAsをベースとする半導体構造の上に酸化膜層を有する部品及びその形成方法 |
JP2019012827A (ja) * | 2017-06-30 | 2019-01-24 | 国立研究開発法人物質・材料研究機構 | 窒化ガリウム系の半導体装置及びその製造方法 |
JP7067702B2 (ja) | 2017-06-30 | 2022-05-16 | 国立研究開発法人物質・材料研究機構 | 窒化ガリウム系の半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
AU2001288239A1 (en) | 2002-02-25 |
WO2002015233A3 (en) | 2002-06-27 |
EP1312122A2 (en) | 2003-05-21 |
WO2002015233A2 (en) | 2002-02-21 |
EP1312122A4 (en) | 2006-08-02 |
KR20030027017A (ko) | 2003-04-03 |
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