AU2001288239A1 - Integrated transistor devices - Google Patents
Integrated transistor devicesInfo
- Publication number
- AU2001288239A1 AU2001288239A1 AU2001288239A AU8823901A AU2001288239A1 AU 2001288239 A1 AU2001288239 A1 AU 2001288239A1 AU 2001288239 A AU2001288239 A AU 2001288239A AU 8823901 A AU8823901 A AU 8823901A AU 2001288239 A1 AU2001288239 A1 AU 2001288239A1
- Authority
- AU
- Australia
- Prior art keywords
- transistor devices
- integrated transistor
- integrated
- devices
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09636484 | 2000-08-10 | ||
US09/636,484 US6936900B1 (en) | 2000-05-04 | 2000-08-10 | Integrated transistor devices |
PCT/US2001/025150 WO2002015233A2 (en) | 2000-08-10 | 2001-08-10 | Integrated transistor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001288239A1 true AU2001288239A1 (en) | 2002-02-25 |
Family
ID=24552107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001288239A Abandoned AU2001288239A1 (en) | 2000-08-10 | 2001-08-10 | Integrated transistor devices |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1312122A4 (ko) |
JP (1) | JP2004507081A (ko) |
KR (1) | KR20030027017A (ko) |
AU (1) | AU2001288239A1 (ko) |
WO (1) | WO2002015233A2 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6936900B1 (en) | 2000-05-04 | 2005-08-30 | Osemi, Inc. | Integrated transistor devices |
US6756320B2 (en) * | 2002-01-18 | 2004-06-29 | Freescale Semiconductor, Inc. | Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure |
WO2003063227A2 (en) * | 2002-01-22 | 2003-07-31 | Massachusetts Institute Of Technology | A method of fabrication for iii-v semiconductor surface passivation |
US7187045B2 (en) | 2002-07-16 | 2007-03-06 | Osemi, Inc. | Junction field effect metal oxide compound semiconductor integrated transistor devices |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
US7250627B2 (en) * | 2004-03-12 | 2007-07-31 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
JP7067702B2 (ja) * | 2017-06-30 | 2022-05-16 | 国立研究開発法人物質・材料研究機構 | 窒化ガリウム系の半導体装置及びその製造方法 |
CN116072707A (zh) * | 2023-02-08 | 2023-05-05 | 厦门大学 | 一种含稀土栅介质层的平面型SiC MOSFET及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962883A (en) * | 1994-03-23 | 1999-10-05 | Lucent Technologies Inc. | Article comprising an oxide layer on a GaAs-based semiconductor body |
US5665658A (en) * | 1996-03-21 | 1997-09-09 | Motorola | Method of forming a dielectric layer structure |
US5945718A (en) * | 1998-02-12 | 1999-08-31 | Motorola Inc. | Self-aligned metal-oxide-compound semiconductor device and method of fabrication |
-
2001
- 2001-08-10 KR KR10-2003-7001947A patent/KR20030027017A/ko not_active Application Discontinuation
- 2001-08-10 AU AU2001288239A patent/AU2001288239A1/en not_active Abandoned
- 2001-08-10 JP JP2002520272A patent/JP2004507081A/ja active Pending
- 2001-08-10 WO PCT/US2001/025150 patent/WO2002015233A2/en active Application Filing
- 2001-08-10 EP EP01967960A patent/EP1312122A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20030027017A (ko) | 2003-04-03 |
EP1312122A2 (en) | 2003-05-21 |
WO2002015233A2 (en) | 2002-02-21 |
JP2004507081A (ja) | 2004-03-04 |
EP1312122A4 (en) | 2006-08-02 |
WO2002015233A3 (en) | 2002-06-27 |
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