JP2004503680A - 炭素及び炭素系材料の製造 - Google Patents
炭素及び炭素系材料の製造 Download PDFInfo
- Publication number
- JP2004503680A JP2004503680A JP2002512441A JP2002512441A JP2004503680A JP 2004503680 A JP2004503680 A JP 2004503680A JP 2002512441 A JP2002512441 A JP 2002512441A JP 2002512441 A JP2002512441 A JP 2002512441A JP 2004503680 A JP2004503680 A JP 2004503680A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- arc
- electrode
- anode
- precursor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 98
- 239000003575 carbonaceous material Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 93
- 230000008021 deposition Effects 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000002243 precursor Substances 0.000 claims abstract description 49
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 28
- 239000010439 graphite Substances 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 20
- 239000007787 solid Substances 0.000 claims description 18
- 239000007833 carbon precursor Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 3
- 239000013590 bulk material Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 69
- 239000010409 thin film Substances 0.000 abstract description 43
- 239000000758 substrate Substances 0.000 abstract description 15
- 229910021385 hard carbon Inorganic materials 0.000 abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 9
- 230000007246 mechanism Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 101100537937 Caenorhabditis elegans arc-1 gene Proteins 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 239000010406 cathode material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- -1 carbon ions Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000010405 anode material Substances 0.000 description 3
- 150000001722 carbon compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012768 molten material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000002301 combined effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XWROSHJVVFETLV-UHFFFAOYSA-N [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XWROSHJVVFETLV-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPR260700 | 2000-07-17 | ||
| PCT/AU2001/000869 WO2002006554A1 (en) | 2000-07-17 | 2001-07-17 | Deposition of carbon and carbon-based materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004503680A true JP2004503680A (ja) | 2004-02-05 |
| JP2004503680A5 JP2004503680A5 (enExample) | 2007-12-13 |
Family
ID=3826641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002512441A Pending JP2004503680A (ja) | 2000-07-17 | 2001-07-17 | 炭素及び炭素系材料の製造 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20030234176A1 (enExample) |
| EP (1) | EP1303644A4 (enExample) |
| JP (1) | JP2004503680A (enExample) |
| WO (1) | WO2002006554A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010528179A (ja) * | 2007-05-25 | 2010-08-19 | エーリコン・トレイディング・アーゲー・トリューバッハ | 真空処理装置及び真空処理方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740586B1 (en) * | 2002-11-06 | 2004-05-25 | Advanced Technology Materials, Inc. | Vapor delivery system for solid precursors and method of using same |
| DE102004041235A1 (de) * | 2004-08-26 | 2006-03-02 | Ina-Schaeffler Kg | Verschleißfeste Beschichtung und Verfahren zur Herstellung derselben |
| US9997338B2 (en) * | 2005-03-24 | 2018-06-12 | Oerlikon Surface Solutions Ag, Pfäffikon | Method for operating a pulsed arc source |
| US20130000545A1 (en) * | 2011-06-28 | 2013-01-03 | Nitride Solutions Inc. | Device and method for producing bulk single crystals |
| KR20160054514A (ko) | 2013-09-04 | 2016-05-16 | 니트라이드 솔루션즈 인크. | 벌크 확산 결정 성장 방법 |
| US11478851B2 (en) | 2016-10-21 | 2022-10-25 | General Electric Company | Producing titanium alloy materials through reduction of titanium tetrachloride |
| AU2017345719B2 (en) | 2016-10-21 | 2021-10-21 | General Electric Company | Producing titanium alloy materials through reduction of titanium tetrachloride |
| DE102020124269A1 (de) | 2020-09-17 | 2022-03-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Vorrichtung und Verfahren zum Abscheiden harter Kohlenstoffschichten |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07206416A (ja) * | 1994-01-20 | 1995-08-08 | Tokai Carbon Co Ltd | 黒鉛質超微粉の製造方法 |
| JPH07216660A (ja) * | 1994-01-28 | 1995-08-15 | Agency Of Ind Science & Technol | カーボンナノチューブの連続製造方法及び装置 |
| JPH07223807A (ja) * | 1994-02-08 | 1995-08-22 | Tokai Carbon Co Ltd | フラーレンの連続製造法および装置 |
| JPH0848510A (ja) * | 1994-08-04 | 1996-02-20 | Satoru Mieno | アーク放電によるフラーレン自動合成装置 |
| WO1998040533A1 (fr) * | 1997-03-13 | 1998-09-17 | Komatsu Ltd. | Dispositif et procede de traitement de surface |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4565618A (en) * | 1983-05-17 | 1986-01-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Apparatus for producing diamondlike carbon flakes |
| JPS63210099A (ja) * | 1987-02-26 | 1988-08-31 | Nissin Electric Co Ltd | ダイヤモンド膜の作製方法 |
| DE3941202A1 (de) * | 1989-12-14 | 1990-06-07 | Fried. Krupp Gmbh, 4300 Essen | Verfahren zur erzeugung von schichten aus harten kohlenstoffmodifikationen und vorrichtung zur durchfuehrung des verfahrens |
| CA2065581C (en) * | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
| US5580429A (en) * | 1992-08-25 | 1996-12-03 | Northeastern University | Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation |
| US5401543A (en) * | 1993-11-09 | 1995-03-28 | Minnesota Mining And Manufacturing Company | Method for forming macroparticle-free DLC films by cathodic arc discharge |
| US5643343A (en) * | 1993-11-23 | 1997-07-01 | Selifanov; Oleg Vladimirovich | Abrasive material for precision surface treatment and a method for the manufacturing thereof |
| US5711773A (en) * | 1994-11-17 | 1998-01-27 | Plasmoteg Engineering Center | Abrasive material for precision surface treatment and a method for the manufacturing thereof |
| JP3147007B2 (ja) * | 1996-10-03 | 2001-03-19 | 村田機械株式会社 | 複合加工機およびその板材加工方法 |
-
2001
- 2001-07-17 WO PCT/AU2001/000869 patent/WO2002006554A1/en not_active Ceased
- 2001-07-17 EP EP01951233A patent/EP1303644A4/en not_active Withdrawn
- 2001-07-17 US US10/333,382 patent/US20030234176A1/en not_active Abandoned
- 2001-07-17 JP JP2002512441A patent/JP2004503680A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07206416A (ja) * | 1994-01-20 | 1995-08-08 | Tokai Carbon Co Ltd | 黒鉛質超微粉の製造方法 |
| JPH07216660A (ja) * | 1994-01-28 | 1995-08-15 | Agency Of Ind Science & Technol | カーボンナノチューブの連続製造方法及び装置 |
| JPH07223807A (ja) * | 1994-02-08 | 1995-08-22 | Tokai Carbon Co Ltd | フラーレンの連続製造法および装置 |
| JPH0848510A (ja) * | 1994-08-04 | 1996-02-20 | Satoru Mieno | アーク放電によるフラーレン自動合成装置 |
| WO1998040533A1 (fr) * | 1997-03-13 | 1998-09-17 | Komatsu Ltd. | Dispositif et procede de traitement de surface |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010528179A (ja) * | 2007-05-25 | 2010-08-19 | エーリコン・トレイディング・アーゲー・トリューバッハ | 真空処理装置及び真空処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1303644A1 (en) | 2003-04-23 |
| WO2002006554A1 (en) | 2002-01-24 |
| EP1303644A4 (en) | 2008-01-09 |
| US20030234176A1 (en) | 2003-12-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071011 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071011 |
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| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100427 |
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| A02 | Decision of refusal |
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