JP2004361937A - 液晶表示装置及びその作製方法 - Google Patents

液晶表示装置及びその作製方法 Download PDF

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Publication number
JP2004361937A
JP2004361937A JP2004141921A JP2004141921A JP2004361937A JP 2004361937 A JP2004361937 A JP 2004361937A JP 2004141921 A JP2004141921 A JP 2004141921A JP 2004141921 A JP2004141921 A JP 2004141921A JP 2004361937 A JP2004361937 A JP 2004361937A
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Japan
Prior art keywords
substrate
laser
liquid crystal
driver
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004141921A
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English (en)
Japanese (ja)
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JP2004361937A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Yasuyuki Arai
康行 荒井
Yasuko Watanabe
康子 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004141921A priority Critical patent/JP2004361937A/ja
Publication of JP2004361937A publication Critical patent/JP2004361937A/ja
Publication of JP2004361937A5 publication Critical patent/JP2004361937A5/ja
Withdrawn legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004141921A 2003-05-12 2004-05-12 液晶表示装置及びその作製方法 Withdrawn JP2004361937A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004141921A JP2004361937A (ja) 2003-05-12 2004-05-12 液晶表示装置及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003133631 2003-05-12
JP2004141921A JP2004361937A (ja) 2003-05-12 2004-05-12 液晶表示装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010276605A Division JP5211145B2 (ja) 2003-05-12 2010-12-13 液晶表示装置の作製方法

Publications (2)

Publication Number Publication Date
JP2004361937A true JP2004361937A (ja) 2004-12-24
JP2004361937A5 JP2004361937A5 (enExample) 2007-05-31

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ID=34067146

Family Applications (1)

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JP2004141921A Withdrawn JP2004361937A (ja) 2003-05-12 2004-05-12 液晶表示装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2004361937A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010098304A (ja) * 2008-09-19 2010-04-30 Semiconductor Energy Lab Co Ltd 表示装置
JP2013084969A (ja) * 2005-02-03 2013-05-09 Semiconductor Energy Lab Co Ltd 半導体装置、モジュール、及び電子機器
JP2015056498A (ja) * 2013-09-11 2015-03-23 国立大学法人大阪大学 有機薄膜トランジスタ及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001201759A (ja) * 2000-01-20 2001-07-27 Sanyo Electric Co Ltd 液晶表示装置
JP2001255560A (ja) * 2000-03-13 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001305584A (ja) * 2000-04-25 2001-10-31 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001330860A (ja) * 2000-02-28 2001-11-30 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2002359374A (ja) * 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd 有機半導体装置及びその作製方法
JP2003017411A (ja) * 2001-04-20 2003-01-17 Semiconductor Energy Lab Co Ltd レーザ照射装置、並びに半導体装置の作製方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001201759A (ja) * 2000-01-20 2001-07-27 Sanyo Electric Co Ltd 液晶表示装置
JP2001330860A (ja) * 2000-02-28 2001-11-30 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001255560A (ja) * 2000-03-13 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001305584A (ja) * 2000-04-25 2001-10-31 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2003017411A (ja) * 2001-04-20 2003-01-17 Semiconductor Energy Lab Co Ltd レーザ照射装置、並びに半導体装置の作製方法
JP2002359374A (ja) * 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd 有機半導体装置及びその作製方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084969A (ja) * 2005-02-03 2013-05-09 Semiconductor Energy Lab Co Ltd 半導体装置、モジュール、及び電子機器
JP2010098304A (ja) * 2008-09-19 2010-04-30 Semiconductor Energy Lab Co Ltd 表示装置
US9478597B2 (en) 2008-09-19 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11139359B2 (en) 2008-09-19 2021-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12250855B2 (en) 2008-09-19 2025-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015056498A (ja) * 2013-09-11 2015-03-23 国立大学法人大阪大学 有機薄膜トランジスタ及びその製造方法

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