JP2004342791A - Led lamp and led lighting device - Google Patents
Led lamp and led lighting device Download PDFInfo
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- JP2004342791A JP2004342791A JP2003136926A JP2003136926A JP2004342791A JP 2004342791 A JP2004342791 A JP 2004342791A JP 2003136926 A JP2003136926 A JP 2003136926A JP 2003136926 A JP2003136926 A JP 2003136926A JP 2004342791 A JP2004342791 A JP 2004342791A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Fastening Of Light Sources Or Lamp Holders (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、熱による発光効率の低下、および発光波長の変動を抑えた、信頼性の高いLED照明具に関するものである。
【0002】
【従来の技術】
従来から屋外照明灯、警告灯、ディスプレイ装置等の光源として、LEDディスクリートランプ(511)が搭載されている。しかし、複数のLEDランプを集合体として回路基板(513)に搭載した場合、個々から発生する熱により灯具全体が高温となり、発光効率の低下、信頼性の低下を招く。 その対策として筐体内部へ外気の取り込みの対策、またはLEDディスクリートランプユニットとヒートシンクの空間部をフィラー入り樹脂(512)で埋め、熱拡散を期待している(例えば、特許文献1参照)。
【0003】
しかし、熱の発生源であるLEDチップ搭載部と放熱樹脂(512)は断面0.25mm2のリードフレーム(511a)で繋がっているのみで、放熱効果は極めて悪い。それゆえ、1個当たりのLED素子に注入できる電流値は20mA程度であり、LEDランプの密度が大になればより低電流でしか使用できなくなる。
【0004】
また、LEDディスクリートランプ(511)は回路基板と2本のリードでつながっており、前後または左右のどちらかに傾く可能性があり、集合体として使用する場合は点灯状態で個々の光軸の調整が必要となる欠点がある(図5参照)。
【0005】
一方、銅箔層(617)、絶縁層(616)、金属ベース(615)の積層基板に絞り加工を施し、絞り加工部分にLEDチップを搭載し、金属ベースの貫通穴を通してLEDチップ搭載側のレンズを保持したLEDユニットの製造法が提案されている(例えば、特許文献2参照)。
【0006】
しかし、LED素子を搭載した積層金属基板を樹脂で一体成形するため、ユニットとしての光軸のズレは生じないものの、発光部の配置の変更には基板の絞り用金型、レンズ用金型等高額な金型費用が必要となる。また、熱源であるLED素子は金属基板と絶縁層を介した回路部に搭載されており、LED素子から金属基板への熱抵抗は大きい。かつ、LED素子から離れた部分の金属ベース部からしか熱の除去ができない問題点がある。(図6参照)。
【0007】
【特許文献1】特開平09−204595号公報(第5頁、図1)
【特許文献2】特開平06−334224号公報(第4頁、図1)
【0008】
【開発が解決しようとする課題】上記のようにLED素子で発生した熱の除去が十分でない場合、図9のグラフの従来品Aおよび従来品Bに示すように、低電流値でしか注入電流に比例した光出力が得られず、大電流値では消費電力の無駄が生じると伴に発光素子の寿命も短くなる。また、発光波長についても図10の従来品Aおよび従来品Bに示すように、LED素子の接合部温度上昇に伴い長波長側にシフトし色調が変化する。
【0009】
また、紫外線発光素子を励起光源とし蛍光材を間接的に発光させるLEDランプにおいては発光素子の波長変動により蛍光材の発光効率が大きく影響され、期待される光度および色度が得られない問題がある。
【0010】
【課題を解決するための手段】LED素子を熱伝導度の大きい材料に搭載し、LED素子の接合部で発生する熱を最短距離である裏面から放熱フィン等に伝導させLED素子の温度上昇を抑えることで、電流値変化による特性の変動を最小限に抑え、特に大電流での発光効率の低下および寿命の短縮を防止する。
【0011】
【発明の実施の形態】以下、本発明の実施態様を図に基づいて説明する。図4は本発明にかかるLEDランプに使用するフレームの一例を示す斜視図である。表面側に底辺がフラット404aで傾斜した反射面404bを備えた窪みと裏面側に本体403より小さい径の凸部を形成した熱伝導性材料と給電のためのワイヤーボンド可能なフレーム402を接着剤で一体化する。
【0012】
ちなみに、図4の窪み部分について詳細に説明すると、使用するLEDチップの幅をW1とすると、窪み底辺の直径Wは、W1×1.41+0.02mm≦W≦W1×1.41+1.0mmが望ましく、さらに望ましくは、W1×1.41+0.1mm≦W≦W1×1.41+0.5mmである。
【0013】
窪みの深さについては、使用するLEDチップの高さをTとすると、深さHはT≦H<T×5が望ましく、さらに望ましくは、T×2≦H≦T×3である。
【0014】
また、反射面の広がり角度θは、底面に対し30°以上が望ましい、さらに望ましくは45°≦θ≦75°であり、この範囲外ではレンズ面への取り出し効率が低下する。
【0015】
次に、本発明の図1について説明する。放熱プレート103の窪み部底辺のフラット部104aにLEDチップ106を接着樹脂で搭載固定し、LEDチップ106の電極パターンと給電フレームをワイヤーボンドする。上記LEDチップの搭載された放熱フレームを、LEDチップ搭載面がレンズ側になるようモールド用型にセットする。なお、望ましくはLEDチップを搭載した窪み部分に事前にシリコン系柔軟樹脂またはモールド材と同じ樹脂を充填しておくと気泡の混入防止に有効である。
【0016】
続いて、放熱プレ−トの凸部103aが露出するよう透明樹脂を充填する。なお、充填する樹脂は熱硬化、熱可塑のどちらの樹脂を使ってもよい。また、樹脂と凸部段差は、使用する放熱プレートと使用する樹脂の熱膨張係数を考慮し、LED点灯時に放熱プレートの凸部が常に水平、または突出するよう、樹脂充填量を調節しておく。
【0017】
また、図7は上記本発明のLEDランプを使った一例であり、詳細に説明する。穴を開けたエポキシ回路基板713の穴に本発明のLEDランプを配置し、基板の回路とLEDランプの給電フレーム712を半田等、導電性材料で接続固定する。次にLEDランプ裏面側の放熱プレートの突出部に熱伝導性樹脂を塗布し、塗布面をヒートシンク等放熱器のフラット面と接触させる。LEDランプを搭載した基板と放熱器は、熱伝導性樹脂の厚みが薄くなるようネジ、またはリベットにより固定する。
【0018】
【実施例1】厚さ2mm、直径5.8mmの銅(還元銅)円板を、表面側に底面104aの直径が0.8mm、反射面104bの角度が60°、深さ0.5mmの窪み、裏面側に直径5.0mm、段差0.6mmの凸部103aになるようプレス加工した放熱プレートの表面ドーナツ状フラット面に非導電性接着材ムロマックボンドH−333Cを薄く塗布し、プレスで打ち抜き下地に0.3μmのニッケルめっき、表面に3μmの銀メッキした給電フレーム102を1.0Kg/cm2の加重を掛けた状態で150℃の雰囲気で30分間硬化した。
【0019】
なお、本実施例では接着強度240Kg/cm2を使用したが、硬化後の接着強度が150Kg/cm2以上が望ましい。また、非導電性接着剤の塗布はスタンピング方式で行ったが、スクリーン印刷、ディスペンス方式でもよい。硬化時の加重は2.0〜0.5Kg/cm2が望ましく、加重を大きくすると電気絶縁されない場合が生じやすくなる。また、加重をかけない場合には接着材の厚みが不均一となり硬化後の接着強度にバラツキが生じ信頼性が落ちる原因となる。
【0020】
上記、放熱プレートの窪み底面104aにLEDチップ106(チップサイズ0.32mm角、チップ高さ0.22mm、材質GaN/サファイヤ)を非導電性接着剤ムロマックボンドH386で配置固定し、LEDチップ表面の電極と給電フレーム102をφ25μmの金線105で接続した。LEDチップの固定に使用する非導電性樹脂は、透明または白色樹脂がより望ましく、着色樹脂は光の吸収によりレンズ面への光の取り出し効率が低下する。また、樹脂の色によっては本来のLEDチップの発光色と異なる色度となる不具合が生じる。
【0021】
続いて、LEDチップ搭載の窪み104に透明エポキシ樹脂を予備充填し、チップ搭載面側が下側になるよう金型に装着(金型についてもレンズ面が下)。透明エポキシ樹脂を金型と放熱プレート隙間から放熱プレートの凸部103aとフラットになるよう注入し、120℃で硬化後、金型から取り外しφ7mm、高さ5.1mmのLEDランプ130を作成した。
【0022】
なお、紫外線発光LEDチップを光源として可視光を得る場合は、窪み部104に蛍光剤を混和したシリコン樹脂を注入、硬化後に金型に装着すればよい。また、インサート成形等、他の成形方法を用いれば透明ポリカーボネート樹脂、アクリル樹脂等も使用できる。
【0023】
【実施例2】上記実施例1と同寸法の放熱プレート303をアルミニウムの溶融成形で作成し、実施例1と同様の方法で給電フレームと一体化した。本放熱プレートの窪み部に、表面にワイヤーボンド可能なAuを蒸着したAlN(サイズ0.5mm角、厚み0.1mm)308を熱導電性樹脂で固定し、その上にLEDチップ306a(チップサイズ0.32mm角、チップ高さ0.25mm、材質AlGaAs/AlGaAs、表面n電極、裏面p電極)を導電性接着剤ムロマックボンドA−71Sで接着した。つづいて、表面n電極と給電フレーム302をφ25μmの金線305aで接続し、もう片方の給電フレーム302とAlN(308)をφ25μmの金線305bで接続した。本実施例では200W/m・KのAlNを使用したが、熱伝導度が150W/m・K以上の材料であれば特に問題は生じなかった。
【0024】
上記LEDチップを搭載した放熱プレートの窪み部に透明シリコン樹脂を充填、熱硬化後、放熱プレートの凸部フラット表面に樹脂が回り込まないよう設計された金型にセットし、透明ポリカーボネート樹脂を金型温度160℃、樹脂温度280℃の条件でインサート成形しLEDランプ130を作成した。
【0025】
【実施例3】φ7mmの穴を開けたエポキシ回路基板713の穴部に、実施例1で作成した本発明のLEDランプ730をはめ込み、基板上の回路とLEDランプの給電フレームをハンダにより接続した。次に、本LEDランプの搭載された基板裏面に現われる放熱プレートのフラット部103aに熱伝導性材料718(信越化学工業製オイルコンパウンドG751)を塗布し、ヒートシンクに搭載した。LEDランプの搭載された基板とヒートシンクはタッピングネジで固定の後、LEDランプ搭載面のレンズ部を除いて防湿樹脂712(東芝シリコンTSE399)を塗布し、LED照明具を作成した。本実施例では熱伝導率4.5W/m・Kのアルミナ混和シリコンオイルを使用したが、熱伝導性材料の膜厚が0.1mm以下で固定できれば2.0W/m・Kの熱伝導率でも十分特性は確保できた。
【0026】
【実施例4】内側に半径15mmの反射面および集光レンズ822を備えたヘッド部と放熱効率を向上させるため、外形20mm、厚み2mmの7枚のフィンを備えたヒートシンクをアルミニウム材で作成した。次に、実施例1で作成した本発明のLEDランプの給電プレート102の+極にケーブルを接続し、放熱プレートの凸部103aに熱伝導性材料818(AOS製54012、熱伝導率2.58W/m・K)を塗布、LEDランプのレンズ側がヘッド部側になるようLEDランプをセットした。一方LEDランプの他方の給電フレーム(−極)はヒートシンクと接触させ、ヘッド部をヒートシンクにねじ込みLED照明具を作成した。
【0027】また、導電性金属筐体に本実施例のLED照明具を多数個配置した照明具の場合、制御回路の−極を筐体に接続することで煩雑な配線が不要となる。
【0028】
【比較例1】実施例3の方法で、本発明のLEDランプ224個を、7個直列32並列の電気回路で、従来品と同じ同心円状に配置したLED照明具を作成した。本比較例を点灯させLEDランプ1個に流れる電流値を基準に、ディスクリートランプを搭載した従来品A、金属積層基板を用いた従来品Bと比較した。図9、図10に示すように、従来品Aは30mA付近まで比例的に出力は増加するものの、50mAを超えると出力は低下した。また、従来品Bについても90mAを超えると出力低下がみられた。発光波長についても、略LEDチップの温度と推測される波長変動をした。
【0029】一方、本比較例で作成したLED照明具は160mAまで略比例的に光度が得られ、発光波長変動についても従来品の1/3〜1/2の変動であった。
【0030】
【発明の効果】以上説明した通り、本発明のLEDランプおよびLED照明具は熱による特性変動を非常に低く抑えることが可能となる。従って、光度・色度・変換効率等の特性の安定化、超寿命化の優れた効果を奏でる。
【図面の簡単な説明】
【図1】本発明にかかるLEDランプの斜視図である。
【図2】本発明にかかるLEDランプの断面図である。
【図3】本発明にかかるLEDランプの一例を示す断面図である。
【図4】本発明のLEDランプの放熱機構の説明図である。
【図5】従来のLEDランプを搭載したユニットの断面図である。
【図6】従来の金属ベース基板を使ったLEDユニットの断面図である。
【図7】本発明のLEDランプを搭載したLED照明具の断面図である。
【図8】本発明のLEDランプを搭載したLED照明具の断面図である。
【図9】比較例品の光出力を示すグラフ図である。
【図10】比較例品の波長変動を示すグラフ図である。
【符号の説明】
101 透明樹脂
102 給電用フレーム
103 放熱プレート
104 凹部
106 LEDチップ
511 LEDディスクリートランプ
512 放熱樹脂
615 金属基板
616 エポキシ絶縁層
709 ヒートシンク
712 防湿樹脂
713 エポキシ回路基板
718 放熱コンパウンド[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a highly reliable LED lighting device in which a decrease in luminous efficiency due to heat and a change in luminous wavelength are suppressed.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, an LED discrete lamp (511) has been mounted as a light source for outdoor lighting lamps, warning lamps, display devices, and the like. However, when a plurality of LED lamps are mounted on the circuit board (513) as an assembly, the heat generated from each of the lamps raises the temperature of the entire lamp, resulting in a decrease in luminous efficiency and a decrease in reliability. As a countermeasure, it is expected that external air is taken into the housing, or that the space between the LED discrete lamp unit and the heat sink is filled with a resin containing filler (512) to diffuse heat (for example, see Patent Document 1).
[0003]
However, the LED chip mounting portion, which is a heat generation source, and the heat dissipation resin (512) are connected only by the lead frame (511a) having a cross section of 0.25 mm 2 , and the heat dissipation effect is extremely poor. Therefore, the current value that can be injected into one LED element is about 20 mA, and the higher the density of the LED lamp, the lower the current that can be used.
[0004]
In addition, the LED discrete lamp (511) is connected to the circuit board by two leads, and may be tilted forward or backward or left or right. When used as an assembly, adjustment of individual optical axes in a lighting state is performed. (See FIG. 5).
[0005]
On the other hand, drawing processing is performed on the laminated substrate of the copper foil layer (617), the insulating layer (616), and the metal base (615), the LED chip is mounted on the drawn part, and the LED chip mounting side is passed through the through hole of the metal base. A method of manufacturing an LED unit holding a lens has been proposed (for example, see Patent Document 2).
[0006]
However, since the laminated metal substrate on which the LED elements are mounted is integrally molded with resin, there is no deviation of the optical axis as a unit. High mold cost is required. Further, the LED element, which is a heat source, is mounted on a circuit portion via a metal substrate and an insulating layer, and the thermal resistance from the LED element to the metal substrate is large. In addition, there is a problem that heat can be removed only from the metal base portion at a portion distant from the LED element. (See FIG. 6).
[0007]
[Patent Document 1] JP-A-09-204595 (
[Patent Document 2] Japanese Patent Application Laid-Open No. 06-334224 (
[0008]
[Problems to be Solved by the Invention] When the heat generated by the LED element is not sufficiently removed as described above, as shown in the conventional products A and B in the graph of FIG. Cannot be obtained, and a large current value wastes power consumption and shortens the life of the light emitting element. Further, as shown in the conventional products A and B in FIG. 10, the emission wavelength shifts to the longer wavelength side and the color tone changes as the junction temperature of the LED element increases.
[0009]
Further, in an LED lamp that emits fluorescent material indirectly using an ultraviolet light emitting device as an excitation light source, there is a problem that the luminous efficiency of the fluorescent material is greatly affected by the wavelength fluctuation of the light emitting device, and the expected luminous intensity and chromaticity cannot be obtained. is there.
[0010]
The LED element is mounted on a material having high thermal conductivity, and the heat generated at the junction of the LED element is conducted to the radiation fin or the like from the rear surface, which is the shortest distance, to reduce the temperature rise of the LED element. By suppressing the fluctuation, the fluctuation of the characteristics due to the change in the current value is minimized, and the reduction of the luminous efficiency and the shortening of the life especially at a large current are prevented.
[0011]
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings. FIG. 4 is a perspective view showing an example of a frame used for the LED lamp according to the present invention. A heat conductive material having a concave portion having a reflective surface 404b with a flat bottom 404a inclined on the front surface side and a convex portion having a smaller diameter than the
[0012]
Incidentally, when the recessed portion in FIG. 4 is described in detail, assuming that the width of the LED chip to be used is W1, the diameter W of the bottom of the recess is preferably W1 × 1.41 + 0.02 mm ≦ W ≦ W1 × 1.41 + 1.0 mm. And more preferably, W1 × 1.41 + 0.1 mm ≦ W ≦ W1 × 1.41 + 0.5 mm.
[0013]
As for the depth of the depression, assuming that the height of the LED chip to be used is T, the depth H is desirably T ≦ H <T × 5, and more desirably, T × 2 ≦ H ≦ T × 3.
[0014]
Also, the spread angle θ of the reflection surface is desirably 30 ° or more with respect to the bottom surface, and more desirably 45 ° ≦ θ ≦ 75 °. Outside this range, the efficiency of taking out light to the lens surface is reduced.
[0015]
Next, FIG. 1 of the present invention will be described. The
[0016]
Subsequently, a transparent resin is filled so that the projection 103a of the heat radiation plate is exposed. The resin to be filled may be either a thermosetting resin or a thermoplastic resin. In addition, the resin and the convex step are adjusted in consideration of the heat radiation plate to be used and the thermal expansion coefficient of the resin to be used, and the resin filling amount is adjusted so that the convex portion of the heat radiation plate is always horizontal or protrudes when the LED is turned on. .
[0017]
FIG. 7 is an example using the LED lamp of the present invention, and will be described in detail. The LED lamp of the present invention is arranged in the hole of the perforated
[0018]
EXAMPLE 1 A copper (reduced copper) disk having a thickness of 2 mm and a diameter of 5.8 mm was placed on the front side with a bottom surface 104a having a diameter of 0.8 mm, a reflecting surface 104b having an angle of 60 ° and a depth of 0.5 mm. The non-conductive adhesive Muromac Bond H-333C is thinly applied to the donut-shaped flat surface of the heat sink plate which has been pressed so as to form the projections 103a having a diameter of 5.0 mm and a step of 0.6 mm on the dent and the back side. Then, a power supply frame 102 having a 0.3 μm nickel plating on the base and a 3 μm silver plating on the surface was cured for 30 minutes in a 150 ° C. atmosphere under a load of 1.0 kg / cm 2 .
[0019]
In the present embodiment was used the adhesive strength 240 Kg / cm 2, the adhesive strength after curing 150 Kg / cm 2 or more. The application of the non-conductive adhesive is performed by a stamping method, but may be performed by a screen printing method or a dispensing method. The load at the time of curing is desirably 2.0 to 0.5 kg / cm 2, and when the load is increased, the case where electrical insulation is not obtained easily occurs. Further, when no load is applied, the thickness of the adhesive becomes non-uniform, and the adhesive strength after curing varies, which causes a decrease in reliability.
[0020]
The LED chip 106 (chip size 0.32 mm square, chip height 0.22 mm, material GaN / sapphire) is arranged and fixed to the concave bottom surface 104a of the heat radiating plate with a non-conductive adhesive Muromac bond H386, and the LED chip surface is fixed. And the power supply frame 102 were connected by a gold wire 105 having a diameter of 25 μm. The non-conductive resin used for fixing the LED chip is more preferably a transparent or white resin, and the colored resin reduces light extraction efficiency to the lens surface due to light absorption. Further, depending on the color of the resin, there is a problem that the chromaticity differs from the original emission color of the LED chip.
[0021]
Subsequently, the
[0022]
In the case where visible light is obtained using an ultraviolet light emitting LED chip as a light source, a silicone resin mixed with a fluorescent agent may be injected into the recessed
[0023]
Embodiment 2 A
[0024]
Fill the recessed part of the heat sink with the above LED chip with transparent silicon resin, and after thermosetting, set in a mold designed to prevent the resin from wrapping around the flat surface of the convex part of the heat sink, and mold the transparent polycarbonate resin. The LED lamp 130 was formed by insert molding under the conditions of a temperature of 160 ° C. and a resin temperature of 280 ° C.
[0025]
[0026]
Embodiment 4 A heat sink provided with an aluminum material and a fin having a thickness of 20 mm and a thickness of 2 mm was formed from an aluminum material in order to improve the heat radiation efficiency and a head portion having a reflecting surface with a radius of 15 mm and a condensing lens 822 inside. . Next, a cable was connected to the positive pole of the power supply plate 102 of the LED lamp of the present invention created in Example 1, and a heat conductive material 818 (54012 made by AOS, thermal conductivity 2.58 W / M · K), and the LED lamp was set so that the lens side of the LED lamp was on the head side. The other power supply frame (-pole) of the one LED lamp was brought into contact with the heat sink, and the head was screwed into the heat sink to produce an LED lighting device.
In the case of a lighting fixture in which a large number of the LED lighting fixtures of this embodiment are arranged in a conductive metal housing, complicated wiring is not required by connecting the negative pole of the control circuit to the housing.
[0028]
COMPARATIVE EXAMPLE 1 By the method of Example 3, an LED illuminator in which 224 LED lamps of the present invention were arranged concentrically in the same concentric circle as a conventional product by using an electric circuit of 7 in series and 32 in parallel. This comparative example was turned on, and a current value flowing through one LED lamp was compared with a conventional product A equipped with a discrete lamp and a conventional product B using a metal laminated substrate. As shown in FIGS. 9 and 10, the output of the conventional product A increased proportionally to around 30 mA, but the output decreased when it exceeded 50 mA. In addition, the output of the conventional product B was also reduced when the output exceeded 90 mA. The emission wavelength also fluctuated, which is assumed to be approximately the temperature of the LED chip.
On the other hand, the LED luminaire produced in this comparative example can obtain the luminous intensity almost proportionally up to 160 mA, and the fluctuation of the emission wavelength is 1/3 to 1/2 that of the conventional product.
[0030]
As described above, the LED lamp and the LED lighting device of the present invention can suppress characteristic fluctuations due to heat to a very low level. Therefore, excellent effects such as stabilization of characteristics such as luminous intensity, chromaticity, and conversion efficiency, and prolongation of life can be obtained.
[Brief description of the drawings]
FIG. 1 is a perspective view of an LED lamp according to the present invention.
FIG. 2 is a sectional view of an LED lamp according to the present invention.
FIG. 3 is a sectional view showing an example of the LED lamp according to the present invention.
FIG. 4 is an explanatory view of a heat radiation mechanism of the LED lamp of the present invention.
FIG. 5 is a cross-sectional view of a unit equipped with a conventional LED lamp.
FIG. 6 is a cross-sectional view of an LED unit using a conventional metal base substrate.
FIG. 7 is a cross-sectional view of an LED lighting device equipped with the LED lamp of the present invention.
FIG. 8 is a sectional view of an LED lighting device equipped with the LED lamp of the present invention.
FIG. 9 is a graph showing the light output of a comparative example product.
FIG. 10 is a graph showing a wavelength variation of a comparative example product.
[Explanation of symbols]
101 Transparent Resin 102
Claims (2)
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JP2003136926A JP3938100B2 (en) | 2003-05-15 | 2003-05-15 | LED lamp and LED lighting fixture |
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