JP2004335618A - Adhesive bonding tape and method of manufacturing the same - Google Patents

Adhesive bonding tape and method of manufacturing the same Download PDF

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Publication number
JP2004335618A
JP2004335618A JP2003127442A JP2003127442A JP2004335618A JP 2004335618 A JP2004335618 A JP 2004335618A JP 2003127442 A JP2003127442 A JP 2003127442A JP 2003127442 A JP2003127442 A JP 2003127442A JP 2004335618 A JP2004335618 A JP 2004335618A
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Prior art keywords
pressure
base film
adhesive
sensitive adhesive
dicing
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Yasumasa Morishima
泰正 盛島
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Priority to JP2003127442A priority Critical patent/JP2004335618A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive bonding tape for dicing/die bonding which can be used for a dicing tape at the time of dicing, used as an adhesive at the time of mounting, and has no residual paste on a ring frame without complicating the tape structure. <P>SOLUTION: In the adhesive bonding tape for dicing/die bonding for a semiconductor substrate, a material film is used in a bonding process for fixing and dicing the semiconductor substrate and sticking the semiconductor substrate on a lead frame or a semiconductor chip in manufacturing a semiconductor device, an adhesive bonding layer is provided on at least one surface of a base film, and a separator is provided on the adhesive bonding layer. A plurality of recessed portions or transparent holes are provided on the surface of the base film which contacts the adhesive bonding layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、基材フィルムの片面に粘接着剤層を設け、且つ粘接着剤層面にセパレータを設けてなる粘接着テープに関するものである。さらに詳しくはシリコンウェハ等を基板として半導体装置を製造するにあたり、ウェハ等を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される半導体ウェハ用ダイシング−ダイボンド用粘接着テープに関するものである。
【０００２】
【従来の技術】
ＩＣなどの半導体装置の組立工程においては、パターン形成後の半導体ウェハ等は個々のチップに切断分離（ダイシング）する工程と、チップを基盤等にマウントする工程、さらに樹脂等で封止する工程からなっている。
ダイシング工程は、例えば、半導体ウェハをあらかじめ粘接着テープに貼り付けて固定した後、チップ形状に沿ってダイシングを行い、マウント工程は、粘接着剤付きのチップを基材フィルムから剥離（ピックアップ）させ、チップに付着した接着固定用の粘接着剤で基盤等に固定する。
上記目的に使用するテープとしては、通常の感圧接着タイプのものと紫外線、電子線など放射線により硬化して粘着力が低下する性質を有するテープがあり、いずれもダイシングする際にはウェハが剥離したりしない十分な粘着力を必要とし、ピックアップの際には容易に剥離できる性質が要求される。
また、マウント工程においては、チップ−チップ間およびチップ−基盤間において十分な接着力が要求される。
【０００３】
上記工程に使用される粘接着テープは、基本的に粘接着剤と基材フィルムおよびセパレーターにより構成されるが、ピックアップ工程でのピックアップ不良を低減する目的で粘接着剤層と基材フィルムの接着力は極めて小さく僅かな剥離力により容易に剥離するように基材フィルム表面の表面エネルギーを低く設計するのが通常である。また、ダイシング時にはリングフレームに粘接着テープを固定して使用し、使用後には粘接着テープを粘接着剤ごと糊残りせずにリングフレームから剥離する必要がある。しかしながら、基材フィルムと粘接着剤は僅かな力により剥離しやすく粘接着剤はリングフレームに糊残りを生じやすい。そのため、本用途に使用される粘接着テープでは、リングフレームに接する部分については、粘接着剤の変更や基材フィルムの表面処理条件の変更などの特別な処理およびテープ構成が必要となりコストアップ要因となっている。
リングフレーム部分の粘接着剤を変更するには、リングフレーム部分とその他の部分を予め打ち抜き成形した後に位置を決めて正確にテープをラミネートする必要がある。一方、フィルム表面の表面エネルギーをコントロールするためには、コロナ処理等を部分的に行う特殊な処理装置が必要となる上に、表面処理部分と未処理部分を識別するためのマーカーを設ける必要がある（例えば、特許文献１参照。）。
【０００４】
【特許文献１】
特開平８−２１３３４９号公報
【０００５】
【発明が解決しようとする課題】
本発明は、上記のような問題点を解消するため、テープ構成を複雑にすることなく、ダイシングの際にはダイシングテープとして使用でき、マウントの際には接着剤として使用でき、リングフレームヘの糊残りの生じないダイボンドダイシング用粘接着テープを提供することを目的とする。
【０００６】
【課題を解決するための手段】
本発明者は、上記課題を解決するために鋭意検討した結果、前述した粘接着テープに使用される基材フィルムの一部分に複数の凹部または透孔を設けて、その基材フィルム表面に粘接着剤層を形成することによりダイシング終了後の剥離工程でリングフレームヘの糊転着を防止可能であることを見出した。本発明はこの知見に基づきなされるに至ったものである。
すなわち、本発明は、
（１）半導体装置を製造するにあたり、ウェハ等を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される、基材フィルムの少なくとも片面に粘着剤層を設け、且つ粘着剤層面にセパレータを設けてなる半導体基板用ダイシング−ダイボンド用粘接着テープであって、前記基材フィルムの前記粘接着剤層に接する面に複数の凹部または透孔を設けたことを特徴とする粘接着テープ、
（２）前記基材フィルムに設けられた前記複数の凹部または透孔を、ダイシング工程で使用されるリングフレームに対応した領域に所定の間隔で前記粘接着剤層に接する面に設けることを特徴とする（１）項記載の粘接着テープ、
（３）前記基材フィルムの前記粘接着剤層に接する面に設けられた複数の凹部または透孔の直径が３ｍｍ以下であることを特徴とする（１）または（２）項記載の粘接着テープ、
（４）前記基材フィルムに設けられた複数の透孔の断面側壁がテーパー形状を有し、前記粘接着剤層に接する面における直径よりも反対面における直径が大きいことを特徴とする（３）項記載の粘接着テープ、
（５）８０℃における粘接着剤の弾性率が０．２ＭＰａ以下であることを特徴とする（１）〜（４）項記載の粘接着テープ、
（６）半導体装置を製造するにあたり、半導体基板を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される、基材フィルムの少なくとも片面に粘接着剤層を設け、且つ粘接着剤層面にセパレータを設けてなる半導体基板用ダイシング−ダイボンド用粘接着テープの製造方法であって、離型フィルム上に塗工乾燥された粘接着フィルムを（１）〜（４）項記載の基材フィルムと張り合わせた後、得られる張り合わせ体を加熱・加圧及び／又は前記基材フィルムに設けられた透孔または凹部を減圧することにより粘接着剤を前記凹部または透孔に流し込むことを特徴とする半導体ウェハ用ダイシング−ダイボンド用粘接着テープの製造方法、及び
（７）８０℃における粘接着剤の弾性率が０．２ＭＰａ以下であることを特徴とする（６）項記載の粘接着テープの製造方法
を提供するものである。
【０００７】
【発明の実施の形態】
以下に本発明を詳細に説明する。
本発明に用いられる基材フィルムとしては、放射線透過性を有するものであれば任意の基材フィルムを使用することができ、例えば、ポリエチレン、ポリプロピレン、エチレン−プロピレン共重合体、ポリブテン、エチレン−酢酸ビニル共重合体、エチレン−アクリル酸エステル共重合体、アイオノマーなどのα−オレフィンの単独重合体または共重合体、ポリエチレンテレフタレート、ポリカーボネート、ポリメタクリル酸メチル等のエンジニアリングプラスチック、またはポリウレタン、スチレン−エチレン−ブテンもしくはペンテン系共重合体等の熱可塑性エラストマーが挙げられる。またはこれらの群から選ばれる２種以上が混合されたものもしくは複層化されたものでもよい。
基材フィルムの厚みは５０〜２００μｍが好ましく用いられる。
【０００８】
基材フィルムに設けられる凹部または透孔の形状は特に制限されるものではなく、円筒形状以外の構造であっても構わない。前記複数の凹部または透孔は、粘接着剤層のアンカーとして設けるものであり、粘接着剤層を外力または熱などの外的刺激により変形して凹部または透孔へ部分的に流し込むことが可能であれば良い。
前記複数の透孔が基材フィルムに設けられた場合は、前記透孔の断面側壁がテーパー形状を有し、前記粘接着剤層に接する面における直径よりも反対面における直径が大きいことが好ましい。
【０００９】
本発明において、前記基材フィルムの前記粘接着剤層に接する面に設けられた複数の凹部または透孔の間隔は、５ｍｍ以下であることが好ましく、より好ましくは、０．５〜３ｍｍである。前記間隔は、均一であることが好ましい。
【００１０】
凹部または透孔の間隔が大きすぎるとアンカー効果が十分に得られにくく、凹部または透孔同士の中間点付近で糊の転写を生じることがあり、小さすぎると、接着効果が得られにくい。
本発明において、前記基材フィルムの前記粘接着剤層に接する面に設けられた複数の凹部または透孔の直径は２ｍｍ以下が好ましい。ここでいう凹部または透孔の直径とは、孔部の最大径をいう。凹部または透孔の直径が大きすぎる場合には、凹部内または透孔内に粘接着剤の大部分を流入させなくてはアンカー効果が得られにくく、粘接着剤の流入量を増やすと粘接着テープの粘接着剤層が局所的に低下することからロール巻き取り時に変形が大きく巻き崩れを起こしやすい。
本発明において、前記基材フィルムに設けられた前記複数の凹部または透孔が、ダイシング工程で使用されるリングフレームと重なる領域に均一の間隔で前記粘接着剤層に接する面に設けられていることが好ましい。
【００１１】
本発明において、粘接着剤層の厚みは特に制限するものではないが、５〜５０μｍであることが好ましい。本発明に用いられる粘接着剤は、特に制限されるものではないが、ダイボンドダイシングテープ用に一般的に使用される粘接着剤であれば良く、例えば、ポリイミド系粘接着剤、ポリアミド系粘接着剤、アクリル系粘接着剤、エポキシ樹脂／アクリル樹脂のブレンド系粘接着剤、接着剤としては、エチレン・酢酸ビニル共重合体、エチレン・アクリル酸エステル共重合体、ポリアミド、ポリエチレン、ポリスルホン等の熱可塑性樹脂、エポキシ樹脂、ポリイミド樹脂、シリコーン樹脂、フェノール樹脂等の熱硬化性樹脂、あるいは、アクリル樹脂、ゴム系ポリマー、フッ素ゴム系ポリマー、フッ素樹脂等の接着剤等を挙げることができる。またはこれらの群から選ばれる２種以上が、さらに混合されたものでもよく、必要に応じて、光重合開始剤、帯電防止剤、架橋促進剤等任意の添加物を混合してよい。
本発明に用いられる粘接着剤は、ＵＶ硬化性化合物を含んでいてよい。ＵＶ硬化性化合物としては、分子内に炭素−炭素二重結合を２個以上有する化合物であり、通常は、質量平均分子量が１００から３００００の範囲にあるオリゴマーを挙げることができる。前記ＵＶ硬化性化合物として、光重合性エポキシアクリレート系オリゴマー、ウレタンアクリレート系オリゴマー等が挙げられる。粘接着剤はＵＶ硬化性であれば、ダイシング時のチッピングが小さいので好ましく、さらにＵＶ硬化に伴ってアンカー効果がより高まるので好ましい。
【００１２】
前記本発明に用いられる粘接着剤として、具体的には、アクリル酸メチルとメタクリル酸グリシジルとの共重合体１００質量部（固形分質量）、ビスフェノール系グリシジル型エポキシ樹脂（数平均分子量＝５００）６００質量部、光重合性エポキシアクリレート系オリゴマー１００質量部及び光重合開始剤５質量部を混合して得た組成物、アクリル酸エチルとメタクリル酸グリシジルとの共重合体１００質量部（固形分質量）、ビスフェノール系グリシジル型エポキシ樹脂（数平均分子量＝５００）３００質量部、光重合性アクリレートモノマー１００質量部及び光重合開始剤５質量部を混合して得た組成物等を挙げることができる。
フィルムに施された凹部または透孔への粘着剤の流入を容易にするためには、粘接着剤の弾性率は８０℃において０．２ＭＰａ以下であることが好ましく、さらに好ましくは０．０５ＭＰａ以下である。０．２ＭＰａ以上の弾性率では粘接着剤が変形しにくくアンカー効果が得られにくい。
セパレータとしては、任意のセパレータフィルムでよく、ポリエチレンテレフタレート（ＰＥＴ）フィルム等を挙げることができる。
【００１３】
本発明の粘接着テープは、離型フィルム上に塗工乾燥された前記粘接着フィルムを前記基材フィルムと張り合わせた後、得られた張り合わせ体を加熱・加圧（例えば７０〜９０℃、３×１０５〜１０６Ｐａ）及び／又は前記基材フィルムに設けられた透孔（または凹部）を、例えば１×１０３〜１０４Ｐａに減圧することにより粘接着剤を前記凹部または透孔の一部に流し込むことにより製造することができる。
前記離型フィルムとしては任意の離型フィルムでよく、高密度ポリエチレン樹脂フィルム等が挙げられる。
【００１４】
このようにして得られた粘接着テープは、ダイシング時には粘着剤層とウェハ及び基材フィルムと剥離しない十分な粘着力を有し、ピックアップの際には放射線硬化により粘着剤層とチップ裏面が密着し、基材フィルムから剥離でき、使用後にはリングフレームから糊残りなく剥離が可能である。
【００１５】
【実施例】
以下、実施例に基づき本発明を更に詳細に説明するが、本発明は、これら実施例に限定されるものではない。
【００１６】
実施例１
高密度ポリエチレン樹脂フィルム（１００μｍ厚、幅３００ｍｍ）に直径１８０〜２４０ｍｍのリングドーナツ円形状に分布する直径約１ｍｍの透孔を約２ｍｍ間隔で作成し基材フィルムＡを得た。次に、アクリル酸メチルとメタクリル酸グリシジルとの共重合体（固形分含有率３５質量％）１００質量部（固形分質量）、ビスフェノール系グリシジル型エポキシ樹脂（数平均分子量＝５００）６００質量部、光重合性エポキシアクリレート系オリゴマー（二重結合を２個有する化合物）１００質量部、及び光重合開始剤（２，２−ジメトキシ−２−フェニルアセトフェノン）５質量部の各成分を混合して得た組成物を、厚さ２５μｍのＰＥＴ系セパレーターフィルムに塗布し、加熱乾燥して、厚さ２５μｍの粘接着層（８０℃での弾性率：１０４Ｐａ）を形成し、８０℃に加熱されたラミネートロールにて基材フィルムＡと張り合わせて粘接着テープを製造した。この粘接着テープを用いて５インチ径シリコンウェハーをステンレス製の６インチリングフレーム（内径：１９５ｍｍ、外径：２３０ｍｍ）にマウントし、その際、リングフレームと基材側にリング形状の分布で透孔が設けられている粘接着剤面を重ね合わせた。
次いで８０Ｗ／ｃｍの高圧水銀灯を用いて、４０ｍＷ／ｃｍ２で紫外線を１２秒間基材フィルム側より照射した後、５ｍｍ角にチップをダイシングした後ピックアップダイボンダーによりチップをピックアップ後、使用済みの粘接着テープを６インチリングフレームより引き剥がしたところ、リングフレームに糊残りの無いことが確認できた。
【００１７】
比較例１
基材フィルムＡの替わりに高密度ポリエチレン樹脂フィルム（商品名：ニポロンハード、東ソー社製；１００μｍ厚、幅３００ｍｍ）を用いた以外は、実施例１と同様な方法で粘接着テープを試作し、リングフレームからの剥離性を実施例１と同様に評価したところ、基材フィルムから粘接着剤が剥離してリングフレームヘ付着してしまった。
【００１８】
【発明の効果】
このように本発明のダイボンドダイシング用粘接着テープは、テープ構成を複雑にすることなく、ダイシングの際にはダイシングテープとして使用でき、マウントの際には接着剤として使用でき、リングフレームヘの糊残りの生じることがない。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer provided on one surface of a base film and a separator provided on the surface of the pressure-sensitive adhesive layer. More specifically, in manufacturing a semiconductor device using a silicon wafer or the like as a substrate, a wafer or the like is fixed and diced, and further, a dicing for a semiconductor wafer used in a bonding process for overlapping with a lead frame or a semiconductor chip is performed. It relates to an adhesive tape.
[0002]
[Prior art]
In the process of assembling a semiconductor device such as an IC, a process of cutting and dicing a semiconductor wafer or the like after pattern formation into individual chips, a process of mounting the chips on a base or the like, and a process of sealing with a resin or the like. Has become.
In the dicing step, for example, after a semiconductor wafer is pasted and fixed on an adhesive tape in advance, dicing is performed along the chip shape, and in the mounting step, the chip with the adhesive is peeled from the base film (pickup). ), And fix it to a base or the like with an adhesive for fixing and sticking to the chip.
As the tape used for the above purpose, there are a normal pressure-sensitive adhesive type tape and a tape having a property of being reduced in adhesive strength by being cured by radiation such as ultraviolet rays and electron beams, and the wafer is peeled off when dicing. Sufficient adhesive strength is required so that it does not drip, and a property that can be easily peeled at the time of pickup is required.
In the mounting step, a sufficient adhesive force is required between the chip and the chip and between the chip and the base.
[0003]
The adhesive tape used in the above process is basically composed of an adhesive, a base film, and a separator. Usually, the surface energy of the substrate film surface is designed to be low so that the adhesive strength of the film is extremely small and the film is easily peeled off by a slight peeling force. Further, at the time of dicing, it is necessary to use a pressure-sensitive adhesive tape fixed to a ring frame, and after use, it is necessary to peel the pressure-sensitive adhesive tape from the ring frame together with the pressure-sensitive adhesive without leaving adhesive. However, the base film and the adhesive are easily peeled off by a slight force, and the adhesive tends to cause adhesive residue on the ring frame. As a result, the adhesive tape used in this application requires special treatments such as changing the adhesive or changing the surface treatment conditions of the base film, and the tape configuration in the area in contact with the ring frame. It is an up factor.
In order to change the adhesive of the ring frame portion, it is necessary to stamp out and mold the ring frame portion and other portions in advance, determine the position, and accurately laminate the tape. On the other hand, in order to control the surface energy of the film surface, a special processing device for partially performing corona treatment or the like is required, and it is necessary to provide a marker for distinguishing the surface-treated portion from the untreated portion. (For example, see Patent Document 1).
[0004]
[Patent Document 1]
JP-A-8-213349
[Problems to be solved by the invention]
The present invention can be used as a dicing tape at the time of dicing, can be used as an adhesive at the time of mounting, and can be used as an adhesive, without complicating the tape structure, in order to solve the above problems. An object of the present invention is to provide a pressure-sensitive adhesive tape for die-bond dicing in which no adhesive residue occurs.
[0006]
[Means for Solving the Problems]
The present inventors have conducted intensive studies to solve the above problems, and as a result, provided a plurality of concave portions or through holes in a part of the base film used for the above-mentioned adhesive tape, and provided a viscous adhesive on the surface of the base film. It has been found that by forming the adhesive layer, it is possible to prevent the transfer of the adhesive to the ring frame in the peeling step after the completion of dicing. The present invention has been made based on this finding.
That is, the present invention
(1) In manufacturing a semiconductor device, a pressure-sensitive adhesive layer is provided on at least one side of a base film, which is used in a bonding process for fixing a wafer or the like, dicing, and overlapping with a lead frame or a semiconductor chip, And a dicing-die bonding adhesive tape for a semiconductor substrate in which a separator is provided on the surface of the pressure-sensitive adhesive layer, wherein a plurality of recesses or through holes are provided on a surface of the base film that is in contact with the pressure-sensitive adhesive layer. Adhesive tape,
(2) providing the plurality of recesses or through-holes provided in the base film on a surface in contact with the adhesive layer at predetermined intervals in a region corresponding to a ring frame used in a dicing step; The adhesive tape according to item (1),
(3) The viscosity according to (1) or (2), wherein a diameter of a plurality of concave portions or through holes provided on a surface of the base film that is in contact with the adhesive layer is 3 mm or less. Adhesive tape,
(4) The cross-sectional side walls of the plurality of through-holes provided in the base film have a tapered shape, and the diameter on the opposite surface is larger than the diameter on the surface in contact with the adhesive layer ( 3) The adhesive tape according to the item,
(5) The adhesive tape according to (1) to (4), wherein the elastic modulus of the adhesive at 80 ° C. is 0.2 MPa or less.
(6) In manufacturing a semiconductor device, an adhesive layer is formed on at least one side of a base film, which is used in a bonding process for fixing a semiconductor substrate, dicing, and superimposing on a lead frame or a semiconductor chip. A method for producing a dicing-die bonding adhesive tape for a semiconductor substrate, comprising providing a separator on the surface of an adhesive layer, wherein the adhesive film coated and dried on a release film is (1) After laminating with the substrate film according to any one of (1) to (4), the obtained laminated body is heated and pressurized and / or depressurized through holes or recesses provided in the substrate film to reduce the pressure-sensitive adhesive. A method for producing an adhesive tape for dicing-die bonding for semiconductor wafers, wherein the adhesive is poured into a concave portion or a through hole; Characterized in that MPa or less (6) there is provided a method of manufacturing adhesive tape according to claim.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described in detail.
As the substrate film used in the present invention, any substrate film can be used as long as it has radiolucency, for example, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene, ethylene-acetic acid Vinyl copolymer, ethylene-acrylate copolymer, α-olefin homopolymer or copolymer such as ionomer, polyethylene terephthalate, polycarbonate, engineering plastics such as polymethyl methacrylate, or polyurethane, styrene-ethylene- Thermoplastic elastomers such as butene or pentene copolymers are exemplified. Alternatively, a mixture of two or more selected from these groups or a multi-layered one may be used.
The thickness of the base film is preferably from 50 to 200 μm.
[0008]
The shape of the concave portion or the through hole provided in the base film is not particularly limited, and may be a structure other than a cylindrical shape. The plurality of recesses or through-holes are provided as anchors of the adhesive layer, and the adhesive layer is deformed by an external stimulus such as an external force or heat and partially flows into the recess or through-hole. It is good if it is possible.
When the plurality of through-holes are provided in the base film, a cross-sectional side wall of the through-hole has a tapered shape, and a diameter on an opposite surface is larger than a diameter on a surface in contact with the adhesive layer. preferable.
[0009]
In the present invention, the interval between the plurality of recesses or through holes provided on the surface of the base film that is in contact with the adhesive layer is preferably 5 mm or less, more preferably 0.5 to 3 mm. is there. Preferably, the intervals are uniform.
[0010]
If the interval between the concave portions or the through holes is too large, it is difficult to sufficiently obtain the anchor effect, and the transfer of the adhesive may occur near the middle point between the concave portions or the through holes.
In the present invention, the diameter of the plurality of recesses or through-holes provided on the surface of the base film that is in contact with the adhesive layer is preferably 2 mm or less. Here, the diameter of the concave portion or the through hole refers to the maximum diameter of the hole. If the diameter of the concave portion or the through-hole is too large, it is difficult to obtain the anchor effect unless the majority of the adhesive is flowed into the concave portion or the through-hole, and when the inflow amount of the adhesive is increased. Since the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is locally reduced, the tape is greatly deformed during roll winding, and easily collapses.
In the present invention, the plurality of recesses or through holes provided in the base film are provided on a surface in contact with the adhesive layer at uniform intervals in a region overlapping with a ring frame used in a dicing step. Is preferred.
[0011]
In the present invention, the thickness of the adhesive layer is not particularly limited, but is preferably 5 to 50 μm. The adhesive used in the present invention is not particularly limited, and may be any adhesive generally used for die-bonding dicing tapes. For example, a polyimide-based adhesive, polyamide Adhesives, acrylic adhesives, epoxy resin / acrylic resin blend adhesives, adhesives include ethylene-vinyl acetate copolymer, ethylene-acrylate copolymer, polyamide, Examples include thermoplastic resins such as polyethylene and polysulfone; thermosetting resins such as epoxy resin, polyimide resin, silicone resin, and phenol resin; and adhesives such as acrylic resin, rubber-based polymer, fluororubber-based polymer, and fluororesin. be able to. Alternatively, two or more selected from these groups may be further mixed, and any additives such as a photopolymerization initiator, an antistatic agent and a crosslinking accelerator may be mixed as needed.
The adhesive used in the present invention may include a UV curable compound. The UV-curable compound is a compound having two or more carbon-carbon double bonds in the molecule, and usually includes an oligomer having a mass average molecular weight in the range of 100 to 30,000. Examples of the UV-curable compound include a photopolymerizable epoxy acrylate oligomer and a urethane acrylate oligomer. It is preferable that the adhesive is UV-curable because chipping during dicing is small, and the anchor effect is further enhanced with UV curing.
[0012]
As the adhesive used in the present invention, specifically, 100 parts by mass of a copolymer of methyl acrylate and glycidyl methacrylate (solid content), bisphenol-based glycidyl-type epoxy resin (number average molecular weight = 500) A) a composition obtained by mixing 600 parts by mass, 100 parts by mass of a photopolymerizable epoxy acrylate oligomer and 5 parts by mass of a photopolymerization initiator, 100 parts by mass of a copolymer of ethyl acrylate and glycidyl methacrylate (solid content Mass), 300 parts by mass of a bisphenol-based glycidyl-type epoxy resin (number average molecular weight = 500), 100 parts by mass of a photopolymerizable acrylate monomer, and 5 parts by mass of a photopolymerization initiator. .
In order to facilitate the flow of the pressure-sensitive adhesive into the concave portions or through holes provided in the film, the elastic modulus of the adhesive is preferably 0.2 MPa or less at 80 ° C., more preferably 0.05 MPa. It is as follows. With an elastic modulus of 0.2 MPa or more, the adhesive is not easily deformed and an anchor effect is hardly obtained.
The separator may be any separator film, such as a polyethylene terephthalate (PET) film.
[0013]
The adhesive tape of the present invention is obtained by laminating the adhesive film coated and dried on a release film with the base film, and then heating and pressing the obtained laminated body (for example, 70 to 90 ° C). 3 × 10 5 to 10 6 Pa) and / or through-holes (or recesses) provided in the base film are reduced to, for example, 1 × 10 3 to 10 4 Pa, to thereby reduce the pressure-sensitive adhesive to the recesses. Alternatively, it can be manufactured by pouring into a part of the through hole.
The release film may be any release film, such as a high-density polyethylene resin film.
[0014]
The pressure-sensitive adhesive tape obtained in this manner has sufficient adhesive strength so that the pressure-sensitive adhesive layer and the wafer and the base film are not peeled off during dicing, and the pressure-sensitive adhesive layer and the chip back surface are cured by radiation during pickup. It adheres and can be peeled off from the base film, and can be peeled off from the ring frame without any adhesive residue after use.
[0015]
【Example】
Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.
[0016]
Example 1
Substrate film A was obtained by forming through holes having a diameter of about 1 mm distributed in a ring donut circle shape having a diameter of 180 to 240 mm at intervals of about 2 mm in a high-density polyethylene resin film (100 μm thickness, 300 mm width). Next, 100 parts by mass (solids content) of a copolymer of methyl acrylate and glycidyl methacrylate (solids content 35% by mass), 600 parts by mass of a bisphenol-based glycidyl type epoxy resin (number average molecular weight = 500), 100 parts by mass of a photopolymerizable epoxy acrylate oligomer (compound having two double bonds) and 5 parts by mass of a photopolymerization initiator (2,2-dimethoxy-2-phenylacetophenone) were obtained by mixing the respective components. The composition is applied to a PET-based separator film having a thickness of 25 μm, and dried by heating to form a 25 μm-thick adhesive layer (elastic modulus at 80 ° C .: 10 4 Pa). The adhesive film was bonded to the base film A using the laminated roll. Using this adhesive tape, a 5-inch silicon wafer is mounted on a 6-inch stainless steel ring frame (inner diameter: 195 mm, outer diameter: 230 mm). At this time, a ring-shaped distribution is formed on the ring frame and the base material side. The adhesive surfaces provided with the through holes were overlapped.
Next, using a high-pressure mercury lamp of 80 W / cm, ultraviolet rays were irradiated from the substrate film side at 40 mW / cm 2 for 12 seconds, the chips were diced into 5 mm squares, and the chips were picked up by a pick-up die bonder. When the adhesive tape was peeled off from the 6-inch ring frame, it was confirmed that there was no adhesive residue on the ring frame.
[0017]
Comparative Example 1
Except for using a high-density polyethylene resin film (trade name: Nipolon Hard, manufactured by Tosoh Corporation; 100 μm thick, 300 mm width) in place of the base film A, a trial production of an adhesive tape was performed in the same manner as in Example 1, When the releasability from the ring frame was evaluated in the same manner as in Example 1, the adhesive was peeled off from the substrate film and adhered to the ring frame.
[0018]
【The invention's effect】
Thus, the pressure-sensitive adhesive tape for die-bond dicing of the present invention can be used as a dicing tape at the time of dicing, can be used as an adhesive at the time of mounting without complicating the tape structure, and can be used for a ring frame. No glue residue occurs.

Claims (7)

半導体装置を製造するにあたり、半導体基板を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される、基材フィルムの少なくとも片面に粘接着剤層を設け、且つ粘接着剤層面にセパレータを設けてなる半導体基板用ダイシング−ダイボンド用粘接着テープであって、前記基材フィルムの前記粘接着剤層に接する面に複数の凹部または透孔を設けたことを特徴とする粘接着テープ。In manufacturing a semiconductor device, a semiconductor substrate is fixed, diced, and further used in an adhesion process for overlapping with a lead frame or a semiconductor chip, a pressure-sensitive adhesive layer is provided on at least one side of a base film, and Dicing for a semiconductor substrate comprising a separator provided on the surface of the adhesive layer, which is a pressure-sensitive adhesive tape for die-bonding, wherein a plurality of recesses or through holes are provided on a surface of the base film which is in contact with the adhesive layer. Adhesive tape characterized by the following. 前記基材フィルムに設けられた前記複数の凹部または透孔を、ダイシング工程で使用されるリングフレームに対応した領域に所定の間隔で前記粘接着剤層に接する面に設けることを特徴とする請求項１記載の粘接着テープ。The plurality of recesses or through holes provided in the base film are provided on a surface in contact with the adhesive layer at predetermined intervals in a region corresponding to a ring frame used in a dicing step. The adhesive tape according to claim 1. 前記基材フィルムの前記粘接着剤層に接する面に設けられた複数の凹部または透孔の直径が３ｍｍ以下であることを特徴とする請求項１または２記載の粘接着テープ。The pressure-sensitive adhesive tape according to claim 1, wherein a diameter of a plurality of recesses or through holes provided on a surface of the base film that is in contact with the pressure-sensitive adhesive layer is 3 mm or less. 4. 前記基材フィルムに設けられた複数の透孔の断面側壁がテーパー形状を有し、前記粘接着剤層に接する面における直径よりも反対面における直径が大きいことを特徴とする請求項３記載の粘接着テープ。4. The cross-sectional side wall of the plurality of through holes provided in the base film has a tapered shape, and a diameter on an opposite surface is larger than a diameter on a surface in contact with the adhesive layer. Adhesive tape. ８０℃における粘接着剤の弾性率が０．２ＭＰａ以下であることを特徴とする請求項１〜４記載の粘接着テープ。The pressure-sensitive adhesive tape according to claim 1, wherein an elastic modulus of the pressure-sensitive adhesive at 80C is 0.2 MPa or less. 半導体装置を製造するにあたり、半導体基板を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される、基材フィルムの少なくとも片面に粘接着剤層を設け、且つ粘接着剤層面にセパレータを設けてなる半導体基板用ダイシング−ダイボンド用粘接着テープの製造方法であって、離型フィルム上に塗工乾燥された粘接着フィルムを請求項１〜４記載の基材フィルムと張り合わせた後、得られる張り合わせ体を加熱・加圧及び／又は前記基材フィルムに設けられた透孔または凹部を減圧することにより粘接着剤を前記凹部または透孔に流し込むことを特徴とする粘接着テープの製造方法。In manufacturing a semiconductor device, a semiconductor substrate is fixed, diced, and further used in an adhesion process for overlapping with a lead frame or a semiconductor chip, a pressure-sensitive adhesive layer is provided on at least one side of a base film, and 5. A method for producing a dicing-bonding tape for die-bonding for a semiconductor substrate comprising a separator provided on the surface of a pressure-sensitive adhesive layer, the pressure-sensitive adhesive film coated and dried on a release film. After laminating with the base film, the obtained laminated body is heated and pressurized and / or the pressure of the through-holes or recesses provided in the base film is reduced, so that the adhesive is poured into the recesses or through-holes. A method for producing an adhesive tape, comprising the steps of: ８０℃における粘接着剤の弾性率が０．２ＭＰａ以下であることを特徴とする請求項６記載の粘接着テープの製造方法。The method for producing an adhesive tape according to claim 6, wherein the elastic modulus of the adhesive at 80C is 0.2 MPa or less.
JP2003127442A 2003-05-02 2003-05-02 Adhesive bonding tape and method of manufacturing the same Pending JP2004335618A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219432A (en) * 2009-03-18 2010-09-30 Furukawa Electric Co Ltd:The Wafer processing tape
JP2012104716A (en) * 2010-11-11 2012-05-31 Sekisui Chem Co Ltd Adhesive sheet for processing semiconductor and packaging method of semiconductor chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219432A (en) * 2009-03-18 2010-09-30 Furukawa Electric Co Ltd:The Wafer processing tape
JP2012104716A (en) * 2010-11-11 2012-05-31 Sekisui Chem Co Ltd Adhesive sheet for processing semiconductor and packaging method of semiconductor chip

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