JP2012104716A - Adhesive sheet for processing semiconductor and packaging method of semiconductor chip - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive sheet for processing semiconductor having an adhesive layer exhibiting excellent followability for a semiconductor wafer and fracturability during expansion, and to provide a packaging method of a semiconductor chip using the adhesive sheet for processing semiconductor.SOLUTION: The adhesive sheet for processing semiconductor is used continuously in a series of steps for individualizing a semiconductor wafer after thinning to produce a semiconductor chip, and flip-chip mounting the semiconductor chip on a circuit board or other semiconductor chip. The adhesive sheet has an adhesive layer and a base material layer. The adhesive layer contains an epoxy resin, a hardener and an inorganic filler. Storage modulus measured by a dynamic viscoelastic measurement apparatus is within a range of 40-70 MPa at temperatures from -15°C to 10°C, and within a range of 0.01-0.2 MPa at temperatures of 70-80°C.

Description

The present invention relates to an adhesive sheet for semiconductor processing having an adhesive layer excellent in followability to a semiconductor wafer and splitting property during expansion. The present invention also relates to a semiconductor chip mounting method using the semiconductor processing adhesive sheet.

In recent years, demands for further miniaturization of semiconductor components have further advanced, and flip chip mounting using a semiconductor chip having protruding electrodes (bumps) has been regarded as important. The flip chip mounting is performed by the following method, for example.
First, an adhesive tape called a back grind tape is bonded to the surface of the semiconductor wafer having the protruding electrodes, which has the protruding electrodes, and the semiconductor wafer is thinned in this state. After thinning, the back grind tape is peeled off. Next, the semiconductor wafer is separated into semiconductor chips, and the obtained semiconductor chips are flip-chip mounted on a substrate or another semiconductor chip using an adhesive sheet or the like.

However, in recent years, with the miniaturization of semiconductor components, the thickness of semiconductor wafers has also become thinner. For example, it is required to reduce the thickness of semiconductor wafers to 50 μm or less. When peeling off, problems such as cracking or chipping of the semiconductor wafer or damage of the protruding electrodes occur.
Therefore, for example, as described in Patent Document 1, instead of peeling the back grind tape, the base material portion is peeled while leaving the adhesive layer of the back grind tape on the semiconductor wafer, and the semiconductor wafer is separated into the entire adhesive layer. A method of tidy up has been proposed. In such a method, the adhesive layer left on the semiconductor wafer also functions as an adhesive when mounting the semiconductor chip, so that it follows the semiconductor wafer sufficiently without biting the void. It is important that they are pasted together.

In addition, when the semiconductor wafer is thinned to a thickness of 50 μm or less, the semiconductor wafer may be cracked even when the semiconductor wafer is separated into individual pieces. Or the cutting waste of an adhesive layer may have a bad influence on the reliability after mounting a semiconductor chip.
In order to solve these problems, for example, after cutting the semiconductor wafer halfway, the opposite surface is polished to separate the semiconductor wafer, so-called tip dicing method, or using a laser to the semiconductor wafer. There has been proposed a so-called stealth dicing method or the like in which a semiconductor wafer is separated into pieces by expanding a non-notched adhesive sheet bonded to the semiconductor wafer after forming the modified region.

For example, in Patent Document 2, as an adhesive sheet that can be applied to the stealth dicing method, the storage elastic modulus at 150 ° C. measured at a frequency of 10 Hz of a cured adhesive layer using a dynamic viscoelasticity measuring device. Is an adhesive sheet for semiconductors having a storage elastic modulus at 170 ° C. of less than 5 MPa.
Patent Document 2 describes that the adhesive sheet for semiconductor described in the same document is excellent in singulation by expanding. However, the adhesive sheet for semiconductors described in Patent Document 2 is not sufficiently split when expanded, and stringing or the like may occur.

Japanese Patent No. 4170839 JP 2010-135765 A

An object of this invention is to provide the adhesive sheet for semiconductor processing which has the adhesive bond layer excellent in the followable | trackability with respect to a semiconductor wafer, and the splitting property at the time of an expansion. Another object of the present invention is to provide a semiconductor chip mounting method using the semiconductor processing adhesive sheet.

The present invention is an adhesive sheet for semiconductor processing that is continuously used in a series of processes in which a semiconductor wafer is thinned and then separated into semiconductor chips, and the semiconductor chips are flip-chip mounted on a substrate or another semiconductor chip. And has an adhesive layer and a base material layer, and the adhesive layer contains an epoxy resin, a curing agent, and an inorganic filler, and measured at −15 to 10 ° C. measured by a dynamic viscoelasticity measuring apparatus. The adhesive sheet for semiconductor processing has a storage elastic modulus in a range of 40 to 70 MPa and a storage elastic modulus in a range of 0.01 to 0.2 MPa at 70 to 80 ° C.
The present invention is described in detail below.

The present inventor, in an adhesive sheet for semiconductor processing having an adhesive layer and a base material layer, contains an epoxy resin, a curing agent and an inorganic filler in the adhesive layer, and the dynamic viscoelasticity of the adhesive layer It has been found that by making the storage elastic modulus measured by the measuring device within a predetermined range, the followability of the adhesive layer to the semiconductor wafer and the splitting property at the time of expansion can be improved.
The present inventor has made such a semiconductor processing adhesive sheet as a semiconductor chip after thinning a semiconductor wafer, and in a series of steps for flip chip mounting the semiconductor chip on a substrate or another semiconductor chip. The present inventors have found that it is suitable as an adhesive sheet for semiconductor processing that is used continuously, and has completed the present invention.

The adhesive sheet for semiconductor processing of the present invention has an adhesive layer and a base material layer.
The said adhesive bond layer has the storage elastic modulus in -15-10 degreeC measured with the dynamic viscoelasticity measuring apparatus in the range of 40-70 MPa.
By having such a storage elastic modulus, the adhesive layer is excellent in splitting properties during expansion. Therefore, when the semiconductor wafer bonded with the adhesive layer is separated into individual pieces, the semiconductor wafer only or a part in the thickness direction of the semiconductor wafer can be obtained without cutting into the adhesive layer. By expanding the laminate of the adhesive layer and the semiconductor wafer after forming the dicing line, the semiconductor wafer can be favorably singulated.

When the lower limit of the range of the storage elastic modulus at −15 to 10 ° C. is less than 40 MPa, the splitting property at the time of expansion of the adhesive layer is lowered, so that the laminate of the adhesive layer and the semiconductor wafer is expanded. As a result, it becomes difficult to divide the semiconductor wafer into pieces, or stringing of the adhesive layer is likely to occur during expansion. When the upper limit of the storage elastic modulus range at −15 to 10 ° C. exceeds 70 MPa, when the semiconductor wafer is separated by expanding the laminate of the adhesive layer and the semiconductor wafer, the adhesive layer It becomes easy to peel from the semiconductor wafer.
The adhesive layer has a preferable lower limit of the storage elastic modulus range at −15 to 10 ° C. measured by a dynamic viscoelasticity measuring device of 42 MPa, a preferable upper limit of 60 MPa, a more preferable lower limit of 45 MPa, and a more preferable upper limit of 55 MPa. It is.

The said adhesive bond layer has the storage elastic modulus in 70-80 degreeC measured with the dynamic viscoelasticity measuring apparatus in the range of 0.01-0.2 MPa.
By having such a storage elastic modulus, the adhesive layer is excellent in followability with respect to the semiconductor wafer, and is well bonded to the semiconductor wafer while suppressing the biting of voids. Therefore, high bonding reliability is realized by dividing the semiconductor wafer bonded with the adhesive layer into pieces and mounting the obtained semiconductor chip on a substrate or another semiconductor chip via the adhesive layer. Can do.

When the lower limit of the range of the storage elastic modulus at 70 to 80 ° C. is less than 0.01 MPa, when the adhesive layer is bonded to a semiconductor wafer having a protruding electrode, handleability is reduced due to large tack, The adhesive layer may protrude. When the upper limit of the storage elastic modulus range at 70 to 80 ° C. exceeds 0.2 MPa, when the adhesive layer is bonded to a semiconductor wafer having a protruding electrode, the followability to the semiconductor wafer is reduced and the void is bitten. It becomes easy to put.
The adhesive layer has a preferable lower limit of the storage elastic modulus in a range of 70 to 80 ° C. measured by a dynamic viscoelasticity measuring device is 0.02 MPa, a preferable upper limit is 0.17 MPa, and a more preferable lower limit is 0.03 MPa, A more preferable upper limit is 0.15 MPa.

As said dynamic viscoelasticity measuring apparatus, VDA-200 (made by IT measurement control company) etc. are mentioned, for example. Moreover, as a method of measuring the storage elastic modulus of the adhesive layer with a dynamic viscoelasticity measuring device, for example, with respect to the adhesive layer having a size of 3 mm × 24 mm and a thickness of about 600 μm, using the dynamic viscoelasticity measuring device, The method of measuring a storage elastic modulus from -50 degreeC to 130 degreeC on conditions with a frequency of 10 Hz and a temperature increase rate of 10 degree-C / min is mentioned.
Moreover, as a method of adjusting the storage elastic modulus of the adhesive layer within the above-described range, for example, a method of adjusting the composition of the adhesive layer is preferable, and more specifically, for example, an inorganic filler described later is used. Examples thereof include a method of adjusting the type, blending amount, etc., a method of blending the above-mentioned adhesive layer with a polymer compound, rubber particles and the like which will be described later.

The adhesive layer contains an epoxy resin.
Although the said epoxy resin is not specifically limited, It is preferable to contain the epoxy resin which has a polycyclic hydrocarbon skeleton in a principal chain. By containing the epoxy resin having the polycyclic hydrocarbon skeleton in the main chain, the cured product of the adhesive layer is rigid and inhibits the movement of molecules, and thus exhibits excellent mechanical strength and heat resistance. Moreover, since the water absorption is lowered, excellent moisture resistance is expressed.

The epoxy resin having the polycyclic hydrocarbon skeleton in the main chain is not particularly limited. For example, an epoxy resin having a dicyclopentadiene skeleton such as dicyclopentadiene dioxide and a phenol novolac epoxy resin having a dicyclopentadiene skeleton (hereinafter referred to as “epoxy resin”) , Dicyclopentadiene type epoxy resin), 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, 1,6-diglycidylnaphthalene, 1,7-di Epoxy resins having a naphthalene skeleton such as glycidylnaphthalene, 2,7-diglycidylnaphthalene, triglycidylnaphthalene, 1,2,5,6-tetraglycidylnaphthalene (hereinafter also referred to as naphthalene type epoxy resin), tetrahydroxyphenylethane type Epoxy resins, tetrakis (glycidyloxyphenyl) ethane, 3,4-epoxy-6-methylcyclohexyl-3,4-epoxy-6-methylcyclohexane carbonate, and the like. Of these, dicyclopentadiene type epoxy resins and naphthalene type epoxy resins are preferable.
These epoxy resins having a polycyclic hydrocarbon skeleton in the main chain may be used singly or in combination of two or more, such as bisphenol A type epoxy resin and bisphenol F type epoxy resin. You may use together with the epoxy resin used widely.

The naphthalene type epoxy resin preferably contains a compound having a structure represented by the following general formula (1). By containing a compound having a structure represented by the following general formula (1), the linear expansion coefficient of the cured product of the adhesive layer can be lowered, and the heat resistance and adhesiveness of the cured product are improved. Thus, higher bonding reliability can be realized.

In General Formula (1), R ⁴ and R ⁵ each represent a hydrogen atom, a halogen atom, an alkyl group, an aryl group, or a phenyl group, and n and m are each 0 or 1, respectively.

When the said epoxy resin contains the compound which has a structure represented by the said General formula (1), the compounding quantity of the compound which has a structure represented by the said General formula (1) is not specifically limited, In the said epoxy resin The preferred lower limit is 3% by weight and the preferred upper limit is 90% by weight. If the compounding amount of the compound having the structure represented by the general formula (1) is less than 3% by weight, the effect of lowering the linear expansion coefficient of the cured product of the adhesive layer may not be sufficiently obtained, or the adhesive strength May decrease. When the compounding amount of the compound having the structure represented by the general formula (1) exceeds 90% by weight, the compound having the structure represented by the general formula (1) and other compounding components are phase-separated, The applicability of the adhesive solution for forming the adhesive layer may decrease or the water absorption rate may increase.
As for the compounding quantity of the compound which has a structure represented by the said General formula (1), the more preferable minimum in the said epoxy resin is 5 weight%, and a more preferable upper limit is 80 weight%.

The adhesive layer preferably further contains a polymer compound.
By mix | blending the said high molecular compound, it becomes easy to adjust the storage elastic modulus of the said adhesive bond layer in the range mentioned above. Further, by blending the polymer compound, flexibility can be imparted to the cured product of the adhesive layer, and higher bonding reliability can be realized.

Although the said high molecular compound is not specifically limited, The high molecular compound which has a functional group which reacts with an epoxy resin is preferable.
The high molecular compound which has a functional group which reacts with the said epoxy resin is not specifically limited, For example, the high molecular compound which has an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group etc. is mentioned. Among these, a polymer compound having an epoxy group is preferable.
When the adhesive layer contains the epoxy resin having the polycyclic hydrocarbon skeleton in the main chain and the polymer compound having the epoxy group, the cured product of the adhesive layer is the polycyclic hydrocarbon. It has excellent mechanical strength, heat resistance and moisture resistance derived from an epoxy resin having a skeleton in the main chain, and excellent flexibility derived from the above-described polymer compound having an epoxy group, and has a thermal cycle resistance, It has excellent solder reflow resistance, dimensional stability, etc., and can realize high bonding reliability and conduction reliability.

The polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at the terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, Examples thereof include bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin. These polymer compounds having an epoxy group may be used alone or in combination of two or more. Among these, an epoxy group-containing acrylic resin is preferable because it contains a lot of epoxy groups and can further improve the mechanical strength and heat resistance of the cured product of the adhesive layer.

The weight average molecular weight of the polymer compound is not particularly limited, but a preferable lower limit is 10,000 and a preferable upper limit is 1,000,000. When the weight average molecular weight of the polymer compound is less than 10,000, the adhesive force of the cured product of the adhesive layer is insufficient, the flexibility is not sufficiently improved, or the adhesive layer is formed. The film forming property may be insufficient. When the weight average molecular weight of the polymer compound exceeds 1,000,000, the adhesive layer may have poor surface strength and poor adhesive strength in the bonding step.

When the said adhesive bond layer contains the said high molecular compound, the compounding quantity of the said high molecular compound is not specifically limited, The preferable minimum with respect to 100 weight part of said epoxy resins is 20 weight part, and a preferable upper limit is 100 weight part. When the blending amount of the polymer compound is less than 20 parts by weight, the storage elastic modulus of the adhesive layer may not be adjusted within the above-described range, and the flexibility of the cured product of the adhesive layer may be reduced. In some cases, high bonding reliability and conduction reliability may not be obtained. If the amount of the polymer compound exceeds 100 parts by weight, the storage elastic modulus of the adhesive layer may not be adjusted within the above-described range, and the mechanical strength and heat resistance of the cured product of the adhesive layer may be reduced. Performance and moisture resistance may deteriorate, and high bonding reliability and conduction reliability may not be obtained.

The adhesive layer contains a curing agent.
The curing agent is not particularly limited. For example, heat curing acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, phenol curing agents, amine curing agents, latent curing agents such as dicyandiamide, and cationic catalysts. Mold curing agents and the like. These hardening | curing agents may be used independently and 2 or more types may be used together. Of these, acid anhydride curing agents are preferred.

By using the acid anhydride-based curing agent, the acidity of the cured product of the adhesive layer can be neutralized, and when the semiconductor chip is mounted on a substrate or another semiconductor chip via the adhesive layer In addition, the reliability of the electrode can be increased. Moreover, since the said acid anhydride type hardening | curing agent has a quick thermosetting speed | rate, generation | occurrence | production of the void in the said adhesive bond layer can be reduced effectively, and high joining reliability can be implement | achieved.

As will be described later, when using an imidazole compound that is liquid at room temperature as a curing accelerator, high thermosetting and excellent storage stability can be achieved by using an acid anhydride having a bicyclo skeleton as a curing agent. And thermal stability can be achieved. In general, when an imidazole compound that is liquid at room temperature is contained, the storage stability and thermal stability of the adhesive layer are lowered, whereas an acid anhydride having a sterically bulky bicyclo skeleton is contained. This is considered to be because the reactivity of the curing reaction is suppressed.
Further, since the acid anhydride having the bicyclo skeleton has high solubility in the epoxy resin, the transparency of the adhesive layer can be further improved, and the semiconductor chip can be attached to the substrate or the other through the adhesive layer. When mounting on the semiconductor chip, it becomes easy to recognize the pattern or position display on the semiconductor chip by the camera of the bonding apparatus.
Furthermore, by using the acid anhydride having the bicyclo skeleton, the cured product of the adhesive layer can exhibit excellent mechanical strength, heat resistance, electrical characteristics, and the like.

The acid anhydride having the bicyclo skeleton is not particularly limited, but a compound having a structure represented by the following general formula (a) is preferable.

In general formula (a), X represents a single bond or a double bond linking group, R ¹ represents a methylene group or an ethylene group, and R ² and R ³ represent a hydrogen atom, a halogen group, an alkoxy group, or a hydrocarbon group. Represents.

Specific examples of the compound having the structure represented by the general formula (a) include nadic acid anhydride and methyl nadic acid anhydride. These may be used independently and 2 or more types may be used together.

Commercially available products of the acid anhydride having the bicyclo skeleton are not particularly limited, and examples thereof include YH-307 and YH-309 (manufactured by Japan Epoxy Resin Co., Ltd.), Ricacid HNA-100 (manufactured by Shin Nippon Rika Co., Ltd.) and the like. These may be used independently and 2 or more types may be used together.

The blending amount of the curing agent is not particularly limited, but when a curing agent that reacts with the functional group of the epoxy resin in an equivalent amount is used, a preferable lower limit with respect to the total amount of epoxy groups contained in the adhesive layer is preferably 60 equivalents. The upper limit is 110 equivalents. When the blending amount of the curing agent is less than 60 equivalents, the adhesive layer may not be sufficiently cured. Even if the compounding quantity of the said hardening | curing agent exceeds 110 equivalent, it does not contribute to the sclerosis | hardenability of the said adhesive bond layer especially.
As for the compounding amount of the curing agent, a more preferable lower limit with respect to the total amount of epoxy groups contained in the adhesive layer is 70 equivalents, and a more preferable upper limit is 100 equivalents.

The adhesive layer may further contain a curing accelerator for the purpose of adjusting the curing speed, the physical properties of the cured product, and the like.
The said hardening accelerator is not specifically limited, For example, an imidazole series hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. These hardening accelerators may be used independently and 2 or more types may be used together. Of these, an imidazole curing accelerator is preferred because it is easy to control the reaction system for adjusting the curing speed and the physical properties of the cured product.

The imidazole-based curing accelerator is not particularly limited. For example, 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group, an imidazole-based curing accelerator whose basicity is protected with isocyanuric acid (trade name “ 2MA-OK ", manufactured by Shikoku Kasei Kogyo Co., Ltd.). These imidazole type hardening accelerators may be used independently and 2 or more types may be used together.

Moreover, the said imidazole series hardening accelerator may contain a liquid imidazole compound at normal temperature. In this specification, being liquid at room temperature means being in a liquid state at a temperature of 10 to 30 ° C.

Generally, by blending the imidazole-based curing accelerator, the adhesive layer can be thermally cured at a relatively low temperature in a short time, but most of the imidazole-based curing accelerators are solid at room temperature and are minute. Since it is pulverized and blended, it causes a decrease in transparency of the adhesive layer. On the other hand, the transparency of the adhesive layer can be increased by containing an imidazole compound that is liquid at room temperature, and when a semiconductor chip is mounted on a substrate or another semiconductor chip via the adhesive layer. In addition, the pattern or position display on the semiconductor chip can be easily recognized by the camera of the bonding apparatus.
Further, as described above, the imidazole compound that is liquid at room temperature is preferably used in combination with an acid anhydride having a sterically bulky bicyclo skeleton. Thereby, the storage stability and thermal stability of the adhesive layer can be enhanced.
Furthermore, by using the imidazole compound that is liquid at room temperature, it is not necessary to finely pulverize the imidazole compound, and an adhesive sheet for semiconductor processing can be more easily produced.

The imidazole compound that is liquid at normal temperature is not particularly limited as long as it is liquid at normal temperature. For example, 2-ethyl-4-methylimidazole, 1-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole. 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2 -Phenyl-4,5-di- (cyanoethoxymethyl) imidazole, 1,8-diazabicyclo (5.4.0) undecene-7, and derivatives thereof. These may be used independently and 2 or more types may be used together. Of these, 2-ethyl-4-methylimidazole and derivatives thereof are preferable.
The derivative is not particularly limited, and examples thereof include salts such as carboxylate, isocyanurate, phosphate, and phosphonate, and adducts with an epoxy compound.

The commercial product of the imidazole compound that is liquid at room temperature is not particularly limited. (Japan Epoxy Resin Co., Ltd.), Fuji Cure 7000 (Fuji Kasei Kogyo Co., Ltd.) and the like. These may be used independently and 2 or more types may be used together.

When the adhesive layer contains an imidazole compound that is liquid at normal temperature, the amount of the imidazole compound that is liquid at normal temperature is not particularly limited, but the preferred lower limit for 100 parts by weight of the curing agent is 5 parts by weight, and the preferred upper limit is 50 parts by weight. When the blending amount of the imidazole compound that is liquid at normal temperature is less than 5 parts by weight, the adhesive layer may require heating at a high temperature for a long time in order to be thermoset. When the blending amount of the imidazole compound that is liquid at room temperature exceeds 50 parts by weight, the adhesive stability of the adhesive layer may decrease.
The blending amount of the imidazole compound that is liquid at room temperature is such that the more preferred lower limit with respect to 100 parts by weight of the curing agent is 10 parts by weight and the more preferred upper limit is 30 parts by weight.

The adhesive layer contains an inorganic filler.
The storage elastic modulus of the adhesive layer can be adjusted within the above-described range by adjusting the type and blending amount of the inorganic filler. Furthermore, by blending the inorganic filler, the mechanical strength of the cured product of the adhesive layer can be ensured, and the linear expansion coefficient of the cured product is reduced to achieve high bonding reliability. be able to.
The inorganic filler is not particularly limited, and examples thereof include silica particles, glass particles, and alumina. Especially, since it is easy to adjust the storage elastic modulus of the said adhesive bond layer in the range mentioned above, a silica particle is preferable.

The minimum with the preferable average particle diameter of the said inorganic filler is 0.01 micrometer, and a preferable upper limit is 1 micrometer. When the average particle diameter is less than 0.01 μm, the viscosity of the adhesive solution for forming the adhesive layer increases, so that the fluidity and coating properties of the adhesive solution are reduced, or the semiconductor processing When the adhesive sheet for bonding is bonded to a semiconductor wafer having protruding electrodes, the followability to the semiconductor wafer may be reduced and the void may be bitten, and high bonding reliability may not be realized. When the average particle diameter exceeds 1 μm, the transparency of the adhesive layer is lowered, and when the semiconductor chip is mounted on the substrate or another semiconductor chip via the adhesive layer, the semiconductor by the camera of the bonding apparatus It may be difficult to recognize the pattern or position display on the chip.
The more preferable lower limit of the average particle diameter of the inorganic filler is 0.02 μm, the more preferable upper limit is 0.5 μm, the still more preferable lower limit is 0.05 μm, and the still more preferable upper limit is 0.3 μm.

Moreover, in order to improve the coating property of the adhesive solution for forming the adhesive layer and improve the transparency of the adhesive layer, two or more kinds of inorganic fillers having different average particle diameters are used. You may use together.

In addition, in this specification, an average particle diameter means the average particle diameter computed by measuring with a laser diffraction type particle size distribution measuring apparatus. Moreover, in this specification, when using together 2 or more types of inorganic fillers which have different average particle diameters, an average particle diameter means the average particle diameter of the mixture of these 2 or more types of inorganic fillers.

The inorganic filler is preferably surface-treated with a coupling agent.
By surface-treating, aggregation of the inorganic filler can be suppressed and affinity with the resin such as the epoxy resin can be increased. Thereby, an increase in the viscosity of the adhesive solution for forming the adhesive layer and a decrease in fluidity and coating property can be suppressed, and the adhesive sheet for semiconductor processing can be applied to a semiconductor wafer having protruding electrodes. At the time of bonding, the followability with respect to the semiconductor wafer can be improved and the biting of voids can be suppressed.

The coupling agent is not particularly limited, and examples thereof include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Among these, a silane coupling agent is preferable from the viewpoint of affinity with the epoxy resin and dispersibility.

The silane coupling agent is not particularly limited, and examples thereof include silane coupling agents such as vinyl silane, epoxy silane, styryl silane, (meth) acryloxy silane, amino silane, ureido silane, mercapto silane, imidazole silane, isocyanate silane, and alkoxy silane. Is mentioned. Of these, alkoxysilane is preferred.
The alkoxysilane is not particularly limited, but phenyltrimethoxysilane and phenyltriethoxysilane are particularly preferable.
These coupling agents may be used alone or in combination of two or more.

Although the compounding quantity of the said inorganic filler is not specifically limited, The preferable minimum with respect to 100 weight part of said epoxy resins is 110 weight part, and a preferable upper limit is 300 weight part. When the blending amount of the inorganic filler is less than 110 parts by weight, the storage elastic modulus of the adhesive layer may be reduced and may not be adjusted within the above-described range. The effect of ensuring the mechanical strength and reducing the linear expansion coefficient may not be sufficiently obtained. When the blending amount of the inorganic filler exceeds 300 parts by weight, the storage elastic modulus of the adhesive layer is increased and may not be adjusted within the above-described range, and for forming the adhesive layer The viscosity of the adhesive solution may increase.

The adhesive layer preferably contains rubber particles.
By mix | blending the said rubber particle, it becomes easy to adjust the storage elastic modulus of the said adhesive bond layer in the range mentioned above.
The rubber particles are not particularly limited, and for example, particles made of acrylic rubber, silicone rubber or the like are preferable. Among these, particles made of acrylic rubber are preferable from the viewpoint of dispersibility in the adhesive layer.

The preferable lower limit of the average particle diameter of the rubber particles is 0.1 μm, and the preferable upper limit is 10 μm. When the average particle size is less than 0.1 μm, the viscosity of the adhesive solution for forming the adhesive layer may increase more than necessary. When the average particle diameter exceeds 10 μm, when the semiconductor chip is mounted on the substrate or another semiconductor chip via the adhesive layer, the rubber particles are bitten to reduce conduction reliability, or the adhesive The transparency of the layer is lowered, and it may be difficult to recognize the pattern or position display on the semiconductor chip by the camera of the bonding apparatus.
In addition, as mentioned above, in this specification, an average particle diameter means the average particle diameter computed by measuring with a laser diffraction type particle size distribution measuring apparatus.

When the said adhesive layer contains the said rubber particle, the compounding quantity of the said rubber particle is not specifically limited, The preferable minimum with respect to 100 weight part of the said epoxy resins is 20 weight part, A preferable upper limit is 40 weight part. When the blended amount of the rubber particles is less than 20 parts by weight, the storage elastic modulus of the adhesive layer may not be adjusted within the above-described range, and high bonding reliability may not be realized. . When the blending amount of the rubber particles exceeds 40 parts by weight, the storage elastic modulus of the adhesive layer may not be adjusted within the above-described range, and the semiconductor chip may be attached to the substrate or other through the adhesive layer. When mounted on a semiconductor chip, the rubber particles may be bitten to reduce conduction reliability.

The adhesive layer may further contain a general resin such as an acrylic resin, a polyimide, a polyamide, or a phenoxy resin, if necessary, and includes a silane coupling agent, a titanium coupling agent, a thickener, You may contain additives, such as a foaming agent.

Although the thickness of the said adhesive bond layer is not specifically limited, A preferable minimum is 5 micrometers and a preferable upper limit is 150 micrometers. When the thickness of the adhesive layer is less than 5 μm, the adhesive strength of the cured product of the adhesive layer may be insufficient. When the thickness of the adhesive layer exceeds 150 μm, the adhesive layer becomes too thick, the splitting property at the time of expansion may be reduced, and the transparency may be reduced, via the adhesive layer. When a semiconductor chip is mounted on a substrate or another semiconductor chip, it may be difficult to recognize the pattern or position display on the semiconductor chip by the camera of the bonding apparatus.
As for the thickness of the said adhesive bond layer, a more preferable minimum is 15 micrometers and a more preferable upper limit is 50 micrometers.

The said base material layer is not specifically limited, For example, the layer which consists of resin, such as polyolefin, acrylate, a polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, urethane, a polyimide, is mentioned.

Although the thickness of the said base material layer is not specifically limited, A preferable minimum is 12 micrometers and a preferable upper limit is 300 micrometers. When the thickness of the base material layer is less than 12 μm, the handleability of the adhesive sheet for semiconductor processing may be deteriorated, and the semiconductor wafer having protruding electrodes is thinned with the adhesive sheet for semiconductor processing being bonded. In doing so, the effect of protecting the protruding electrodes may be reduced. If the thickness of the substrate layer exceeds 300 μm, the processability of the adhesive sheet for semiconductor processing may be reduced or it may be difficult to form a roll at the time of packaging. When a semiconductor wafer having an electrode is thinned, variation in the thickness of the semiconductor wafer after thinning may increase.

The adhesive sheet for semiconductor processing of the present invention may further have a softer layer than the base material layer between the adhesive layer and the base material layer. Such a layer is also referred to as a flexible layer in the present specification.
By having the flexible layer, the semiconductor processing adhesive sheet can easily follow the protruding electrode without changing the shape of the protruding electrode even when the adhesive layer is thinner than the height of the protruding electrode of the semiconductor wafer. Therefore, when the semiconductor wafer having the protruding electrode is thinned with the adhesive sheet for semiconductor processing being bonded, the semiconductor wafer can be thinned satisfactorily while sufficiently protecting the protruding electrode.

The flexible layer is not particularly limited. For example, polyolefin resins such as polyethylene (PE) and polypropylene (PP), ethylene-vinyl acetate copolymer (EVA), polyvinyl chloride (PVC), polyalkyl (meth) acrylate. Transparent layer containing polybityl butyral (PVB), polyvinyl alcohol, polyvinyl acetal, polyurethane (PU), polytetrafluoroethylene (PTFE) and copolymers thereof, a layer having a network structure, and pores Examples include open layers. Of these, a layer containing polyethylene (PE), ethylene-vinyl acetate copolymer (EVA) or polyalkyl (meth) acrylate is preferable.
In the present specification, (meth) acrylate means both methacrylate and acrylate, and (meth) acrylic acid means both methacrylic acid and acrylic acid.

Although the thickness of the said flexible layer is not specifically limited, A preferable minimum is 2 micrometers and a preferable upper limit is 100 micrometers. When the thickness of the flexible layer is less than 2 μm, the effect of protecting the protruding electrode may be reduced when the semiconductor wafer having the protruding electrode is thinned with the semiconductor processing adhesive sheet bonded thereto. When the thickness of the flexible layer exceeds 100 μm, the effect of holding the semiconductor wafer by the semiconductor processing adhesive sheet is reduced when the semiconductor wafer having the protruding electrode is thinned with the semiconductor processing adhesive sheet bonded together. Sometimes.

The method for producing the adhesive sheet for semiconductor processing of the present invention is not particularly limited. For example, the epoxy resin, the curing agent, the inorganic filler, and each material added as necessary are diluted with a suitable solvent, After preparing an adhesive solution for forming the adhesive layer by stirring and mixing using a homodisper or the like, the obtained adhesive solution was applied to a release-treated PET film and dried, Examples include a method of laminating the obtained adhesive layer and the base material layer. In addition, when the adhesive sheet for semiconductor processing of the present invention has a flexible layer, the method for forming the flexible layer is not particularly limited. For example, a solution for forming the flexible layer is applied onto the base material layer. Then, a method of drying is exemplified.
The coating method is not particularly limited, and examples thereof include a method using comma coating, gravure coating, casting, and the like.

In the adhesive sheet for semiconductor processing according to the present invention, the adhesive layer has a storage elastic modulus at −15 to 10 ° C. measured by a dynamic viscoelasticity measuring device in the range of 40 to 70 MPa, so that the split at the time of expansion is performed. Excellent in properties. Moreover, in the adhesive sheet for semiconductor processing of the present invention, the adhesive layer has a storage elastic modulus at 70 to 80 ° C. measured by a dynamic viscoelasticity measuring device within a range of 0.01 to 0.2 MPa. It is excellent in followability with respect to the semiconductor wafer and is well bonded to the semiconductor wafer while suppressing the biting of the void.
Such an adhesive sheet for semiconductor processing of the present invention is a continuous process in a series of steps in which a semiconductor wafer is thinned and then separated into semiconductor chips, and the semiconductor chips are flip-chip mounted on a substrate or another semiconductor chip. Used.

A method for mounting a semiconductor chip using an adhesive sheet for semiconductor processing of the present invention, comprising: a surface having a protruding electrode of a semiconductor wafer having protruding electrodes; and an adhesive layer of the adhesive sheet for semiconductor processing of the present invention, 70 to The step of bonding at 80 ° C., the step of polishing the surface of the semiconductor wafer opposite to the surface having the protruding electrodes, and thinning the semiconductor wafer, and the thickness of the semiconductor wafer alone or the thickness of the semiconductor wafer Forming a dicing line only in a part of the direction, and expanding the semiconductor wafer at −15 to 10 ° C. with a laminate of the adhesive layer of the semiconductor processing adhesive sheet of the present invention and the semiconductor wafer. A process comprising dividing the semiconductor chip into a semiconductor chip and flip-chip mounting the semiconductor chip on a substrate or another semiconductor chip through an adhesive layer. Implementation body chip is also one of the present invention.

In the semiconductor chip mounting method of the present invention, first, a step of bonding the surface of the semiconductor wafer having the projecting electrodes and the adhesive layer of the adhesive sheet for semiconductor processing of the present invention at 70 to 80 ° C. is performed. .
Here, the adhesive layer of the adhesive sheet for semiconductor processing of the present invention has a storage elastic modulus at 70 to 80 ° C. measured by a dynamic viscoelasticity measuring device within a range of 0.01 to 0.2 MPa, and is a semiconductor wafer. Excellent follow-up performance. Therefore, in the above step, the surface having the protruding electrode of the semiconductor wafer and the adhesive layer of the adhesive sheet for semiconductor processing of the present invention can be satisfactorily bonded while suppressing the biting of the void, and further described later. In this step, high bonding reliability can be realized by mounting the semiconductor chip on the substrate or another semiconductor chip via the adhesive layer.

Although the method of bonding is not particularly limited, a method of bonding using a laminator is usually used. Moreover, although the said process may be performed under a normal pressure, in order to improve the adhesiveness of the adhesive sheet for semiconductor processing of this invention more, it is preferable to carry out under a vacuum of about 1 torr.

In the semiconductor chip mounting method of the present invention, next, the surface of the semiconductor wafer opposite to the surface having the protruding electrodes is polished to thin the semiconductor wafer.
The polishing method is not particularly limited, and a conventionally known method can be used. For example, using a commercially available grinding apparatus (for example, “DFG8540” manufactured by Disco Corporation), the polishing method is 3 to 0. There is a method of performing grinding under the condition of a grinding amount of 2 μm / s and finally finishing by CMP.

In the semiconductor chip mounting method of the present invention, a step of forming a dicing line only on the semiconductor wafer or only on a part of the semiconductor wafer in the thickness direction is then performed.
In the step, a dicing line is formed only on the semiconductor wafer or only in a part in the thickness direction of the semiconductor wafer without making a cut in the adhesive layer of the adhesive sheet for semiconductor processing of the present invention.

As a method of forming a dicing line only in a part in the thickness direction of the semiconductor wafer, for example, a method of forming a dicing line using a dicing saw so that the thickness of the semiconductor wafer is cut by about 10 μm by blade dicing. A method (so-called stealth dicing method) in which a modified region is formed only in a part in the thickness direction of the semiconductor wafer by using a laser apparatus such as MAHOH DICING MACHINE (manufactured by Tokyo Seimitsu Co., Ltd.). Of these, stealth dicing is particularly preferred because it is processed in a non-contact manner and damage to the surface layer portion of the semiconductor wafer is small and the processing speed can be improved.

In the step, it is preferable to form a dicing line from the back surface of the semiconductor wafer, that is, the surface of the semiconductor wafer opposite to the surface on which the adhesive layer of the adhesive sheet for semiconductor processing of the present invention is bonded.
By forming a dicing line from the back surface of the semiconductor wafer, in the case of blade dicing, the dicing saw is prevented from being contaminated by the adhesive layer of the adhesive sheet for semiconductor processing of the present invention, and the adhesive for semiconductor processing of the present invention is used. The deformation, peeling, etc. of the adhesive layer of the sheet can be suppressed, and in the case of stealth dicing, laser light is irradiated when laser light is irradiated from the adhesive layer side of the adhesive sheet for semiconductor processing of the present invention. It is possible to prevent the incidence from being hindered.
Furthermore, by forming a dicing line from the back surface of the semiconductor wafer, it is possible to prevent the cutting waste of the adhesive layer of the adhesive sheet for semiconductor processing of the present invention from adversely affecting the reliability after mounting the semiconductor chip. .

In the semiconductor chip mounting method of the present invention, the semiconductor wafer is then separated into individual pieces by expanding the laminate of the adhesive layer of the adhesive sheet for semiconductor processing of the present invention and the semiconductor wafer at −15 to 10 ° C. And a step of forming a semiconductor chip is performed.
Here, the adhesive layer of the adhesive sheet for semiconductor processing of the present invention has a storage elastic modulus at −15 to 10 ° C. measured by a dynamic viscoelasticity measuring device in the range of 40 to 70 MPa, and is split when expanded. Excellent. Therefore, in the above process, a dicing line is formed only on the semiconductor wafer or only in a part in the thickness direction of the semiconductor wafer without cutting into the adhesive layer of the adhesive sheet for semiconductor processing of the present invention. Later, by expanding the laminated body of the adhesive layer of the adhesive sheet for semiconductor processing of the present invention and the semiconductor wafer, the semiconductor wafer can be favorably separated.

Although the method for expanding the laminate of the adhesive layer of the adhesive sheet for semiconductor processing of the present invention and the semiconductor wafer is not particularly limited, an expander apparatus such as UH130-12 (ULTRON SYSTEM, Inc.) is usually used. An expanding method is used.

Moreover, when expanding the laminated body of the adhesive layer of the adhesive sheet for semiconductor processing of the present invention and the semiconductor wafer, it is preferable to use a dicing tape.
The dicing tape is used by being bonded to the back surface of the semiconductor wafer, that is, the surface opposite to the surface to which the adhesive layer of the adhesive sheet for semiconductor processing of the present invention is bonded. By expanding the dicing tape, a horizontal force acts on the semiconductor wafer, whereby the adhesive layer of the adhesive sheet for semiconductor processing of the present invention can also be expanded.

In the semiconductor chip mounting method of the present invention, the semiconductor wafer is divided into individual pieces by expanding a laminated body of the semiconductor wafer and the adhesive layer of the semiconductor processing adhesive sheet of the present invention at −15 to 10 ° C. It is preferable to perform a step of peeling the base material layer from the adhesive sheet for semiconductor processing of the present invention before performing the step of forming a semiconductor chip.

In the semiconductor chip mounting method of the present invention, the semiconductor chip is then flip-chip mounted on a substrate or another semiconductor chip via an adhesive layer.
The semiconductor chip mounting method of the present invention includes both a case where a semiconductor chip is mounted on a substrate and a case where a semiconductor chip is further mounted on one or more semiconductor chips mounted on the substrate. .

In the method for mounting a semiconductor chip according to the present invention, after the above process is performed, a process of completely curing the adhesive layer may be performed by heating the obtained mounting body. Thereby, more stable mounting can be performed.

ADVANTAGE OF THE INVENTION According to this invention, the adhesive sheet for semiconductor processing which has the adhesive layer excellent in the followable | trackability with respect to a semiconductor wafer and the splitting property at the time of an expansion can be provided. Moreover, according to this invention, the mounting method of the semiconductor chip using this adhesive sheet for semiconductor processing can be provided.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

(Examples 1-5 and Comparative Examples 1-4)
(1) Manufacture of adhesive sheet for semiconductor processing According to the composition of Table 1, the following materials were added to methyl ethyl ketone to adjust the solid content concentration to 50% by weight, and stirred and mixed using a homodisper. An adhesive solution for forming an adhesive layer was prepared. The obtained adhesive solution was coated on a PET film having a thickness of 25 μm as a base material layer using an applicator (manufactured by Tester Sangyo Co., Ltd.), and dried at 100 ° C. for 5 minutes to obtain a thickness of 40 μm An adhesive sheet for semiconductor processing having an adhesive layer and a base material layer having a thickness of 25 μm was obtained.

(Polymer compound)
・ G-017581 (epoxy group-containing acrylic resin, manufactured by NOF Corporation)
・ G-2050-LM (epoxy group-containing acrylic resin, manufactured by NOF Corporation)
・ SK-2-88 (epoxy group-containing acrylic resin, manufactured by Shin-Nakamura Chemical Co., Ltd.)
(Epoxy resin)
・ HP-7200 (Dicyclopentadiene type epoxy resin, manufactured by DIC)
EXA-4710 (Naphthalene type epoxy resin, manufactured by DIC)
(Curing accelerator)
・ Fujicure 7000 (imidazole compound that is liquid at room temperature, manufactured by Fuji Kasei Kogyo Co., Ltd.)
(Curing agent)
・ YH-309 (acid anhydride curing agent, manufactured by JER)
(Inorganic filler)
YA050C-MJF (phenyltrimethoxysilane surface-treated spherical silica, average particle size 0.05 μm, manufactured by Admatechs)
SE-1050-SPT (phenyltrimethoxysilane surface-treated spherical silica, average particle size 0.3 μm, manufactured by Admatechs)
(Rubber particles)
AC-4030 (acrylic rubber type core-shell particles, average particle size 0.5 μm, manufactured by Ganz Kasei Co., Ltd.)
・ J-5800 (acrylic rubber type core-shell particles, average particle size 1 μm, manufactured by Mitsubishi Rayon Co., Ltd.)
(Silane coupling agent)
・ KBM-573 (Phenylaminosilane, manufactured by Shin-Etsu Chemical Co., Ltd.)

(2) Measurement of storage elastic modulus After laminating the adhesive layer of the obtained adhesive sheet for semiconductor processing to a thickness of about 600 μm, a test sample was prepared by cutting out to a size of 3 mm × 24 mm. About this test sample, using a dynamic viscoelasticity measuring device (VDA-200, manufactured by IT Measurement Control Co., Ltd.), storage elasticity from -50 ° C to 130 ° C under the conditions of a frequency of 10 Hz and a heating rate of 10 ° C / min. The modulus was measured, and the storage elastic modulus at −15 to 10 ° C. and 70 to 80 ° C. was determined.

<Evaluation>
The following evaluation was performed about the adhesive sheet for semiconductor processing obtained by the Example and the comparative example. The results are shown in Table 1.

(1) Laminating properties (trackability)
The adhesive layer of the adhesive sheet for semiconductor processing was laminated on a semiconductor wafer having a thickness of 50 μm at 80 ° C. On the surface of the semiconductor wafer to which the adhesive sheet for semiconductor processing is bonded, there is no void biting and no adhesive sticking out, ◎, there are some voids, or some adhesive sticking out. The case where there was a lot of voids and the case where the adhesive protruded was evaluated as x.

(2) Splitting 1 (blade dicing)
After laminating an adhesive sheet for semiconductor processing on a semiconductor wafer having a thickness of 50 μm at 80 ° C., the base material layer was peeled off. Blade dicing is performed on the semiconductor wafer so as to leave about 10 μm from the surface (back surface) opposite to the surface on which the semiconductor processing adhesive sheet is bonded, and a dicing line is formed only on a part of the semiconductor wafer in the thickness direction. Formed. Next, after cooling the semiconductor wafer, the semiconductor wafer is expanded by using an expander apparatus (UH130-12, ULTRON SYSTEM, Inc.) under the conditions of an expansion speed of 8 mm / sec, an expansion amount of 10 mm, and a temperature of 0 ° C. Separated into semiconductor chips.
When the adhesive layer and the semiconductor wafer are cut at the same time, and the semiconductor chip obtained is 95% or more without stringing of the adhesive layer (removal residue) or peeling of the adhesive layer from the semiconductor wafer The splitting property was evaluated with ◎ as ◎, when it was 90% or more and less than 95% as ○, and when it was less than 90% as ×. In addition, there is no stringing of the adhesive layer (removal residue), and the adhesive layer is not peeled from the semiconductor wafer, and the semiconductor chip obtained by simultaneously cutting the adhesive layer and the semiconductor wafer is 90% or more. However, it was set as x also when the adhesive layer or the semiconductor wafer was cracked or chipped.

(3) Splitting ability 2 (Stealth dicing)
A semiconductor wafer having a diameter of 20 cm and a thickness of 750 μm and a large number of spherical Ag—Sn solder balls having an average height of 40 μm and a diameter of 110 μm on the surface at a pitch of 100 μm was prepared. The adhesive layer of the adhesive sheet for semiconductor processing is attached to the surface having the solder balls of the semiconductor wafer under a condition of 80 ° C. for 10 seconds under a vacuum (1 torr) using a laminator (ATM-812M, manufactured by Takatori). It was.

Next, the semiconductor wafer was attached to a grinding apparatus, and the surface (back surface) opposite to the surface on which the semiconductor processing adhesive sheet was bonded was ground until the thickness of the semiconductor wafer reached about 50 μm. At this time, the operation was performed while water was sprayed on the semiconductor wafer so that the temperature of the semiconductor wafer did not increase due to frictional heat of grinding. After grinding, the semiconductor wafer was polished by polishing with an aqueous solution of silica dispersed in alkali by a CMP (Chemical Mechanical Polishing) process using a polishing apparatus.

The semiconductor wafer was removed from the polishing apparatus, and stealth dicing was performed by irradiating a laser beam from the surface (back surface) opposite to the surface on which the semiconductor processing adhesive sheet was bonded to form a dicing line inside the semiconductor wafer. Next, a dicing tape was attached to the back surface of the semiconductor wafer, and a dicing frame made of stainless steel was attached to the outer periphery of the dicing tape. Then, the base material layer of the adhesive sheet for semiconductor processing was peeled off.

After cooling the semiconductor wafer, the expander device (UH130-12, ULTRON SYSTEM, Inc.) is used to fix the dicing frame and expand the dicing tape to separate the semiconductor wafer into a 10 mm square semiconductor. Chip. In addition, the stage of the expander apparatus was adjusted in advance to 0 ° C. by cooling with a cryogen or dry ice. The expanding conditions were an expanding speed of 8 mm / sec, an expanding amount of 10 mm, and a temperature of 0 ° C.
The splitting property was evaluated according to the same criteria as in (2) Splitting property 1 (blade dicing).

ADVANTAGE OF THE INVENTION According to this invention, the adhesive sheet for semiconductor processing which has the adhesive layer excellent in the followable | trackability with respect to a semiconductor wafer and the splitting property at the time of an expansion can be provided. Moreover, according to this invention, the mounting method of the semiconductor chip using this adhesive sheet for semiconductor processing can be provided.

Claims (2)

After the semiconductor wafer is thinned, it is divided into individual semiconductor chips, and is an adhesive sheet for semiconductor processing that is used continuously in a series of steps of flip-chip mounting the semiconductor chip to a substrate or another semiconductor chip,
Having an adhesive layer and a substrate layer;
The adhesive layer contains an epoxy resin, a curing agent, and an inorganic filler, and has a storage elastic modulus at −15 to 10 ° C. measured by a dynamic viscoelasticity measuring device in the range of 40 to 70 MPa, and 70 to An adhesive sheet for semiconductor processing, wherein a storage elastic modulus at 80 ° C. is in a range of 0.01 to 0.2 MPa. A method for mounting a semiconductor chip using the semiconductor processing adhesive sheet according to claim 1,
Bonding the surface having the protruding electrode of the semiconductor wafer having the protruding electrode and the adhesive layer of the adhesive sheet for semiconductor processing at 70 to 80 ° C .;
Polishing the surface of the semiconductor wafer opposite to the surface having the protruding electrodes, and thinning the semiconductor wafer;
Forming the dicing line only on the semiconductor wafer or only in a part of the thickness direction of the semiconductor wafer;
A step of dividing the semiconductor wafer into a semiconductor chip by expanding a laminate of the adhesive layer of the adhesive sheet for semiconductor processing and the semiconductor wafer at −15 to 10 ° C .;
And a step of flip-chip mounting the semiconductor chip on a substrate or another semiconductor chip through an adhesive layer.