JP2012074623A - Adhesive film for processing semiconductor, and method of manufacturing semiconductor chip mounting body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive film for processing a semiconductor, that can suppress damage and deformation of a bump electrode without being peeled off during back grinding of a wafer with the bump electrode, and can be peeled off with a low load and without leaving an adhesive when peeling a base material portion while leaving an adhesive layer only after the back grinding, and to provide a method of manufacturing a semiconductor chip mounting body using the adhesive film for processing the semiconductor and having excellent bonding reliability.SOLUTION: This adhesive film for processing the semiconductor holds the wafer with the bump electrode during the back grinding of the wafer with the bump electrode, and functions as an adhesive when mounting a semiconductor chip with the bump electrode. In this adhesive film for processing the semiconductor, a polyester base material film, an electrode protecting layer, and the adhesive layer are laminated in this order, and when performing a peeling test under a condition in which the temperature is 25°C, a tensile angle is 180°, and a tensile speed is 300 mm/minute after pasting it to the wafer with the dump electrode, interfacial peeling is caused between the electrode protecting layer and the adhesive layer, adhesive residue is observed in neither of the electrode protecting layer or the adhesive layer, and peeling strength is 5-400 gf/25 mm.

Description

The present invention can suppress damage and deformation of the protruding electrode without causing peeling when the wafer with the protruding electrode is back-grinded, and when the substrate portion is peeled after leaving the adhesive layer only after the back-grinding. Relates to an adhesive film for semiconductor processing which can be peeled off with a low load without adhesive residue. Moreover, this invention relates to the manufacturing method of the semiconductor chip mounting body excellent in joining reliability using this adhesive film for semiconductor processing.

In recent years, miniaturization and high integration of semiconductor devices have progressed, and flip chip type semiconductor chip mounting bodies having a plurality of protrusions (bumps) as electrodes on the surface have been produced. Such a semiconductor chip mounting body is manufactured, for example, by the following method.
First, an adhesive sheet or tape called back grind tape is bonded to the surface of a wafer having a plurality of protrusions (bumps) as electrodes on the surface, and the wafer is ground to a predetermined thickness in this state. After grinding, the back grind tape is peeled off. Next, the wafer is diced into individual semiconductor chips, and the obtained semiconductor chips are bonded to other semiconductor chips or substrates by flip chip mounting. Thereafter, the underfill agent is filled and cured.
However, there is a problem that such a process is extremely complicated.

Therefore, as a simpler method, instead of peeling the back grind tape, the substrate portion is peeled while leaving the adhesive layer of the back grind tape on the wafer, and then the semiconductor chip obtained by dicing the wafer is removed. A method of bonding to another semiconductor chip or substrate via an adhesive layer has been proposed. For example, Patent Document 1 discloses a laminated sheet having a layer (A layer) in contact with a circuit surface, a layer directly laminated on the A layer (B layer), and an outermost layer (C layer) each having predetermined physical properties. A method for manufacturing a semiconductor device is described which includes a step of grinding the back surface of a wafer with protruding electrodes to which is attached, a step of leaving only the A layer on the wafer and removing other layers, and a step of cutting into individual chips. .

In Patent Document 1, bump filling property, wafer processability, conductivity after chip mounting, and the like are evaluated. However, as described in Patent Document 1, the base material portion is peeled while leaving the adhesive layer on the wafer. In the method, it is also important to easily peel off the base material portion with a low load. For example, Patent Document 2 discloses a base film, a separation layer, and an adhesive as an adhesive film for processing a semiconductor wafer in which the adhesive resin layer can be easily peeled from the base film and the performance of the adhesive layer does not deteriorate. There is described an adhesive film for processing a semiconductor wafer in which layers are laminated in this order, and an adhesive film for processing a semiconductor wafer in which the cohesive force between the separation layer and the adhesive layer is a relationship of separation layer <adhesive layer.

In Patent Document 2, the semiconductor wafer processing adhesive film described in the same document has the separation layer cohesively broken when the base film is peeled off, part of which remains on the surface of the adhesive layer and part of the base film. It is described that it peels off on the top, and that the separation layer partially remaining on the surface of the adhesive layer is cured at the same reaction rate as the adhesive layer, so that it does not hinder the adhesive properties of the adhesive layer. Has been.
However, in the adhesive film for semiconductor wafer processing described in Patent Document 2, since the separation layer is cohesively broken, the adhesive force of the adhesive layer may be reduced depending on the composition of the separation layer. Since the thickness becomes non-uniform, there is a problem that a void is bitten at the time of bonding or the shape of a fillet formed after bonding is varied.

Japanese Patent No. 4170839 JP 2010-56409 A

The present invention can suppress damage and deformation of the protruding electrode without causing peeling when the wafer with the protruding electrode is back-grinded, and when the substrate portion is peeled after leaving the adhesive layer only after the back-grinding. An object of the present invention is to provide an adhesive film for semiconductor processing that can be peeled off with a low load without adhesive residue. Another object of the present invention is to provide a method for manufacturing a semiconductor chip package that has excellent bonding reliability using the adhesive film for semiconductor processing.

The present invention is an adhesive film for semiconductor processing that holds a wafer with a protruding electrode during backgrinding of the wafer with a protruding electrode, and functions as an adhesive when mounting a semiconductor chip with a protruding electrode. The electrode protective layer and the adhesive layer are laminated in this order, and after being bonded to the wafer with protruding electrodes, a peel test was performed under the conditions of 25 ° C., a pulling angle of 180 °, and a pulling speed of 300 mm / min. Interface peeling occurs between the electrode protective layer and the adhesive layer, no adhesive residue is observed in either the electrode protective layer or the adhesive layer, and the peel strength is 5 to 400 gf / It is an adhesive film for semiconductor processing which is 25 mm.
The present invention is described in detail below.

The inventor holds a wafer with a protruding electrode during backgrinding of the wafer with a protruding electrode, and an adhesive film for semiconductor processing that functions as an adhesive when mounting a semiconductor chip with a protruding electrode. When the electrode protective layer and the adhesive layer are laminated in this order, and when a peel test is performed under predetermined conditions, interfacial peeling occurs between the electrode protective layer and the adhesive layer, and the electrode protection is performed. No adhesive residue is observed in either the layer or the adhesive layer, and the electrode protective layer and the adhesive layer are formed so that the peel strength satisfies a predetermined range. It is possible to suppress damage and deformation of the protruding electrode without occurring, and on the other hand, when leaving the base material part leaving only the adhesive layer, it is possible to perform peeling with a low load without adhesive residue. The heading, has led to the completion of the present invention.

The adhesive film for semiconductor processing of the present invention is an adhesive film for semiconductor processing that holds the wafer with the protruding electrode during back grinding of the wafer with the protruding electrode, and functions as an adhesive when mounting the semiconductor chip with the protruding electrode, A polyester base film, an electrode protective layer, and an adhesive layer are laminated in this order.
In addition, the adhesive film for semiconductor processing of the present invention is used by bonding the adhesive layer to the surface on which the protruding electrode of the wafer with the protruding electrode is formed.

The adhesive film for semiconductor processing of the present invention can be used, for example, when the adhesive layer is bonded to the surface of the wafer with protruding electrodes formed on the surface, when the backgrinding of the wafer with protruding electrodes is performed, In the coating and drying process when forming the protective layer and the adhesive layer, the coating may be heated up to about 100 ° C. at the maximum. Moreover, the adhesive film for semiconductor processing of this invention may be cooled to about -20 degreeC, for example, when stored by refrigeration or freezing.
Since the polyester base film is stable in the above temperature range and hardly undergoes alteration, deformation, and the like, the adhesive film for semiconductor processing of the present invention has thermal stability and strength by having the polyester base film. And is suitably used as an adhesive film for semiconductor processing.

Examples of the resin constituting the polyester base film include polyethylene terephthalate, polyethylene naphthalate, polytrimethylene terephthalate, and polybutylene terephthalate. Of these, polyethylene terephthalate is preferable from the viewpoint of versatility.

Although the thickness of the said polyester-type base film is not specifically limited, A preferable minimum is 4 micrometers and a preferable upper limit is 200 micrometers. When the thickness of the polyester base film is less than 4 μm, the obtained adhesive film for semiconductor processing may not be able to hold the wafer with protruding electrodes during back grinding of the wafer with protruding electrodes. When the thickness of the polyester-based substrate film exceeds 200 μm, the resulting adhesive film for semiconductor processing is excessive in the wafer with protruding electrodes when the substrate portion is peeled off leaving only the adhesive layer after back grinding. May generate stress.
The minimum with more preferable thickness of the said polyester-type base film is 5 micrometers, and a more preferable upper limit is 100 micrometers.

The adhesive film for semiconductor processing according to the present invention is bonded to the wafer with protruding electrodes, and then subjected to a peeling test under the conditions of 25 ° C., a pulling angle of 180 °, and a pulling speed of 300 mm / min. Interfacial peeling occurs between the adhesive layer, no adhesive residue is observed in any of the electrode protective layer and the adhesive layer, and the peel strength is 5 to 400 gf / 25 mm.

When performing a peel test under the above conditions, interface peeling occurs between the electrode protective layer and the adhesive layer, and no adhesive residue is observed in either the electrode protective layer or the adhesive layer. This means that the self-cohesion force of the electrode protective layer and the adhesive layer is larger than the interfacial adhesive force between the electrode protective layer and the adhesive layer. The adhesive can be peeled off with a low load without any adhesive residue when the base material portion is peeled after leaving the adhesive layer only after back grinding.
In this specification, it is observed visually or with an optical microscope that no interfacial peeling occurs between the electrode protective layer and the adhesive layer, and no adhesive residue is observed in either the electrode protective layer or the adhesive layer. can do.

When the peel strength when the peel test is performed under the above conditions is less than 5 gf / 25 mm, the resulting adhesive film for semiconductor processing is formed between the electrode protective layer and the adhesive layer during back grinding of the wafer with protruding electrodes. Defects such as peeling will occur. When the peel strength when the peel test is performed under the above conditions exceeds 400 gf / 25 mm, the resulting adhesive film for semiconductor processing has a protrusion when the substrate part is peeled after leaving the adhesive layer only after back grinding. Excessive stress is generated in the electrode-attached wafer, and cracks and the like are generated.
The preferable lower limit of the peel strength when the peel test is performed under the above conditions is 7 gf / 25 mm, the preferable upper limit is 350 gf / 25 mm, the more preferable lower limit is 10 gf / 25 mm, and the more preferable upper limit is 300 gf / 25 mm.

When performing the peel test under the above conditions, as a method of bonding the semiconductor processing adhesive film of the present invention to a wafer with protruding electrodes, for example, ATM-812M (Takatori) under a vacuum of about 50 to 100 ° C. and 1 torr, for example. And a method of pasting together using a vacuum laminator such as a company).
Moreover, when performing a peeling test on the said conditions, tensilon (AG-IS, Shimadzu Corporation Corp.) etc. can be used.

In the adhesive film for semiconductor processing of the present invention, when a peel test is performed under the above conditions, interface peeling occurs between the electrode protective layer and the adhesive layer, and any of the electrode protective layer and the adhesive layer In order to form the electrode protective layer and the adhesive layer so that no adhesive residue is observed and the peel strength satisfies the above range, the electrode protective layer and the adhesive layer are as follows. It is preferable that the self-cohesive force of the electrode protective layer and the adhesive layer and the interfacial adhesive force between the electrode protective layer and the adhesive layer are adjusted by adjusting the composition.

The electrode protective layer may be tacky or non-tacky.
By having the electrode protective layer, the adhesive film for semiconductor processing according to the present invention is capable of damage and deformation of the protruding electrode due to contact with the polyester base film, which is a hard substrate, during back grinding of the wafer with the protruding electrode. Can be suppressed.

Examples of the electrode protective layer include polyolefin resins such as polyethylene (PE) and polypropylene (PP), ethylene-vinyl acetate copolymer (EVA), polyvinyl chloride (PVC), polyalkyl (meth) acrylate, and polyvinyl butyral. (PVB), polyvinyl alcohol, polyvinyl acetal, polyurethane (PU), transparent layer containing polytetrafluoroethylene (PTFE) and copolymers thereof, a layer having a network structure, a layer with holes, etc. Is mentioned. Especially, it is preferable that the said electrode protective layer is a layer containing polyethylene (PE), ethylene-vinyl acetate copolymer (EVA), or polyalkyl (meth) acrylate.
In the present specification, (meth) acrylate means both methacrylate and acrylate, and (meth) acrylic acid means both methacrylic acid and acrylic acid.

The polyalkyl (meth) acrylate is not particularly limited. For example, a general (meth) acrylic acid alkyl ester resin obtained by polymerizing or copolymerizing one or two or more (meth) acrylic acid alkyl ester monomers. And a copolymer of the above (meth) acrylic acid alkyl ester monomer and another vinyl monomer copolymerizable therewith. Among these, a copolymer of a (meth) acrylic acid alkyl ester monomer and another vinyl monomer that can be copolymerized therewith is preferable.

Although the (meth) acrylic acid alkyl ester monomer is not particularly limited, it is obtained by an esterification reaction of a primary or secondary alkyl alcohol having 1 to 12 carbon atoms in the alkyl group with (meth) acrylic acid (meta). ) Acrylic acid alkyl ester monomers are preferred, and specific examples include ethyl (meth) acrylate, butyl (meth) acrylate, and (meth) acrylic acid-2-ethylhexyl. These (meth) acrylic acid alkyl ester monomers may be used alone or in combination of two or more.

The method for producing the polyalkyl (meth) acrylate is not particularly limited. For example, the (meth) acrylic acid alkyl ester monomer can be copolymerized with the (meth) acrylic acid alkyl ester monomer as necessary. Examples of the method include radical polymerization in the presence of a polymerization initiator together with other vinyl monomers.
The method for radical polymerization is not particularly limited, and examples thereof include conventionally known methods such as solution polymerization, emulsion polymerization, suspension polymerization, and bulk polymerization.

Moreover, it is also preferable to use a functional group-containing (meth) acrylic acid alkyl ester resin as the polyalkyl (meth) acrylate.
The functional group-containing (meth) acrylic acid alkyl ester resin is generally in the range of 2 to 18 carbon atoms of the alkyl group (meth) as in the case of general (meth) acrylic acid alkyl ester resins. Copolymerize such a main monomer, a functional group-containing monomer, and other modifying monomers that can be copolymerized with these monomers as required, using an acrylic acid alkyl ester monomer as the main monomer. It is preferable that it is a polymer which has adhesiveness at normal temperature obtained by this.
The weight average molecular weight of such a functional group-containing (meth) acrylic acid alkyl ester resin is not particularly limited, but is usually about 200,000 to 2,000,000.

The functional group-containing monomer is not particularly limited. For example, a carboxyl group-containing monomer such as (meth) acrylic acid, a hydroxyl group-containing monomer such as hydroxyethyl (meth) acrylate, or an epoxy group containing glycidyl (meth) acrylate. Monomers, isocyanate group-containing monomers such as isocyanate ethyl (meth) acrylate, amino group-containing monomers such as aminoethyl (meth) acrylate, and the like.
The other modifying monomers are not particularly limited, and examples thereof include various monomers used for general (meth) acrylic acid alkyl ester resins such as vinyl acetate, acrylonitrile, and styrene.

Furthermore, as the polyalkyl (meth) acrylate, a (meth) acrylic acid alkyl ester polymerizable polymer having a radical polymerizable unsaturated bond can also be used.
The (meth) acrylic acid alkyl ester polymerizable polymer having a radical polymerizable unsaturated bond is prepared by previously synthesizing the functional group-containing (meth) acrylic acid alkyl ester resin having a functional group in the molecule. It is preferably obtained by reacting a compound having a functional group that reacts with the functional group and a radically polymerizable unsaturated bond.
In addition, when the said electrode protective layer contains the (meth) acrylic-acid alkylester type | system | group polymerizable polymer which has the said radically polymerizable unsaturated bond, the said electrode protective layer contains a photoinitiator or a thermal-polymerization initiator. It is preferable.

When the said electrode protective layer contains the said polyalkyl (meth) acrylate, it is preferable that the said electrode protective layer contains a crosslinking agent.
When the electrode protective layer contains the cross-linking agent, a cross-linked structure can be formed between the main chains of the polyalkyl (meth) acrylate. Thus, by increasing the degree of the cross-linked structure, the electrode protection layer can be formed. The self-cohesive force of the layer can be improved.

The said crosslinking agent is not specifically limited, For example, an isocyanate type crosslinking agent, an aziridine type crosslinking agent, an epoxy-type crosslinking agent, a metal chelate type crosslinking agent etc. are mentioned. Among them, the self-cohesion of the electrode protective layer is facilitated by the reaction of the isocyanate group of the isocyanate crosslinking agent with the alcoholic hydroxyl group in the polyalkyl (meth) acrylate to form a partial three-dimensional structure. In view of this, an isocyanate-based crosslinking agent is preferable.

When the electrode protective layer contains the polyalkyl (meth) acrylate and the crosslinking agent, the amount of the crosslinking agent is not particularly limited, but the self-cohesion force of the electrode protective layer and the electrode protective layer From the viewpoint of adjusting the interfacial adhesive force between the adhesive layer as described above, a preferable lower limit with respect to 100 parts by weight of the polyalkyl (meth) acrylate is 0.5 parts by weight, and a preferable upper limit is 8 parts by weight, A more preferred lower limit is 1 part by weight, and a more preferred upper limit is 7 parts by weight.
Moreover, when the said electrode protective layer contains the said polyalkyl (meth) acrylate and the said crosslinking agent, in order to fully bridge | crosslink, the said electrode protective layer is used for several hours on room temperature or a heating condition before use. It may be cured for several tens of hours.

Although the thickness of the said electrode protective layer is not specifically limited, A preferable minimum is 2 micrometers and a preferable upper limit is 100 micrometers. When the thickness of the electrode protective layer is less than 2 μm, the resulting adhesive film for semiconductor processing is a protruding electrode formed by contacting the polyester base film, which is a hard substrate, during back grinding of the wafer with the protruding electrode. Damage and deformation may not be suppressed. When the thickness of the electrode protective layer exceeds 100 μm, the obtained adhesive film for semiconductor processing cannot sufficiently hold the wafer with protruding electrodes during back grinding of the wafer with protruding electrodes, and the thickness of the wafer with protruding electrodes. May cause variations and cracks. The more preferable lower limit of the thickness of the electrode protective layer is 4 μm, the still more preferable lower limit is 5 μm, the more preferable upper limit is 70 μm, and the still more preferable upper limit is 50 μm.

The adhesive layer preferably contains an epoxy resin, a polymer compound having a functional group that reacts with the epoxy resin, and a curing agent.
Although the said epoxy resin is not specifically limited, It is preferable to contain the epoxy resin which has a polycyclic hydrocarbon skeleton in a principal chain. By containing an epoxy resin having the above-mentioned polycyclic hydrocarbon skeleton in the main chain, the cured product of the resulting adhesive layer is rigid and exhibits excellent mechanical strength and heat resistance because it inhibits molecular movement In addition, it exhibits excellent moisture resistance due to low water absorption.

The epoxy resin having the polycyclic hydrocarbon skeleton in the main chain is not particularly limited. For example, an epoxy resin having a dicyclopentadiene skeleton such as dicyclopentadiene dioxide and a phenol novolac epoxy resin having a dicyclopentadiene skeleton (hereinafter referred to as “epoxy resin”) , Dicyclopentadiene type epoxy resin), 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, 1,6-diglycidylnaphthalene, 1,7-di Epoxy resins having a naphthalene skeleton such as glycidylnaphthalene, 2,7-diglycidylnaphthalene, triglycidylnaphthalene, 1,2,5,6-tetraglycidylnaphthalene (hereinafter also referred to as naphthalene type epoxy resin), tetrahydroxyphenylethane type Epoxy resins, tetrakis (glycidyloxyphenyl) ethane, 3,4-epoxy-6-methylcyclohexyl-3,4-epoxy-6-methylcyclohexane carbonate, and the like. Of these, dicyclopentadiene type epoxy resins and naphthalene type epoxy resins are preferable.
These epoxy resins having a polycyclic hydrocarbon skeleton in the main chain may be used singly or in combination of two or more, such as bisphenol A type epoxy resin and bisphenol F type epoxy resin. You may use together with the epoxy resin used widely.

The naphthalene type epoxy resin preferably contains a compound having a structure represented by the following general formula (1). By containing the compound having the structure represented by the following general formula (1), the linear expansion coefficient of the cured product of the obtained adhesive layer can be lowered, and the heat resistance and adhesiveness of the cured product are improved. Higher bonding reliability can be realized.

In General Formula (1), R ¹ and R ² each represent a hydrogen atom, a halogen atom, an alkyl group, an aryl group, or a phenyl group, and n and m are 0 or 1, respectively.

When the said epoxy resin contains the compound which has a structure represented by the said General formula (1), the compounding quantity of the compound which has a structure represented by the said General formula (1) is not specifically limited, In the said epoxy resin The preferred lower limit is 3% by weight and the preferred upper limit is 90% by weight. If the compounding amount of the compound having the structure represented by the general formula (1) is less than 3% by weight, the effect of lowering the linear expansion coefficient of the cured product of the adhesive layer may not be sufficiently obtained, or the adhesive strength May decrease. When the compounding amount of the compound having the structure represented by the general formula (1) exceeds 90% by weight, the compound having the structure represented by the general formula (1) and other compounding components are phase-separated, The applicability of the composition for forming the adhesive layer may be reduced, or the water absorption rate may be increased. As for the compounding quantity of the compound which has a structure represented by the said General formula (1), the more preferable minimum in the said epoxy resin is 5 weight%, and a more preferable upper limit is 80 weight%.

By containing a polymer compound having a functional group that reacts with the epoxy resin, the self-cohesion force of the resulting adhesive layer can be improved. Moreover, by containing a polymer compound having a functional group that reacts with the epoxy resin, flexibility can be imparted to the obtained adhesive layer, and an adhesive layer having excellent bonding reliability can be formed. Can do.

The high molecular compound which has a functional group which reacts with the said epoxy resin is not specifically limited, For example, the high molecular compound which has an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group etc. is mentioned. Among these, a polymer compound having an epoxy group is preferable.

When the adhesive layer contains the epoxy resin having the polycyclic hydrocarbon skeleton in the main chain and the polymer compound having the epoxy group, the cured product of the adhesive layer is the polycyclic hydrocarbon skeleton. Has excellent mechanical strength, heat resistance and moisture resistance derived from an epoxy resin having a main chain, and excellent flexibility derived from the above-described polymer compound having an epoxy group. It is excellent in solder reflow property, dimensional stability, etc., and can realize high bonding reliability and conduction reliability.

The polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at the terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, Examples thereof include bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin. These polymer compounds having an epoxy group may be used alone or in combination of two or more. Among these, an epoxy group-containing acrylic resin is preferable because it contains a large amount of epoxy groups and can further improve the mechanical strength and heat resistance of the cured product of the resulting adhesive layer.

The polymer compound having a functional group that reacts with the epoxy resin may have a photocurable functional group in addition to the functional group that reacts with the epoxy resin. When the polymer compound having a functional group that reacts with the epoxy resin has the photocurable functional group, the resulting adhesive layer is provided with photocurability and can be semi-cured by light irradiation. It becomes possible to control the interfacial adhesive force between the electrode protective layer and the adhesive layer by light irradiation.
The photocurable functional group is not particularly limited, and examples thereof include an acryl group and a methacryl group.

Although the weight average molecular weight of the high molecular compound which has a functional group which reacts with the said epoxy resin is not specifically limited, A preferable minimum is 10,000 and a preferable upper limit is 1 million. If the weight average molecular weight is less than 10,000, the adhesive strength of the cured product of the resulting adhesive layer may be insufficient or the flexibility may not be sufficiently improved. When the said weight average molecular weight exceeds 1 million, the adhesive layer obtained may be inferior in the surface wettability at the time of bonding, and may be inferior to adhesive strength.

Although the compounding quantity of the high molecular compound which has a functional group which reacts with the said epoxy resin is not specifically limited, The preferable minimum with respect to 100 weight part of said epoxy resins is 20 weight part, and a preferable upper limit is 100 weight part. When the blending amount of the polymer compound having a functional group that reacts with the epoxy resin is less than 20 parts by weight, the resulting adhesive layer has a reduced self-cohesive force or a reduced flexibility of the cured product, High joint reliability and conduction reliability may not be obtained. When the compounding amount of the polymer compound having a functional group that reacts with the epoxy resin exceeds 100 parts by weight, the cured product of the obtained adhesive layer has reduced mechanical strength, heat resistance and moisture resistance, and has high bonding reliability. And conduction reliability may not be obtained.

The curing agent is not particularly limited. For example, heat curing acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, phenol curing agents, amine curing agents, latent curing agents such as dicyandiamide, and cationic catalysts. Mold curing agents and the like. These hardening | curing agents may be used independently and 2 or more types may be used together. Of these, acid anhydride curing agents are preferred.

By using the said acid anhydride type hardening | curing agent, the acidity of the hardened | cured material of the adhesive bond layer obtained can be neutralized, and the reliability of an electrode can be improved. Moreover, since the said acid anhydride type hardening | curing agent has a quick hardening rate, generation | occurrence | production of the void in the hardened | cured material of the adhesive layer obtained can be reduced effectively, and high joint reliability can be implement | achieved.

As will be described later, when a liquid imidazole compound is used as a curing accelerator at room temperature, by using an acid anhydride having a bicyclo skeleton as a curing agent, high curability and excellent storage stability and heat can be obtained. It is possible to achieve both stability. In general, when an imidazole compound that is liquid at room temperature is contained, the storage stability and thermal stability of the adhesive layer are lowered, whereas an acid anhydride having a sterically bulky bicyclo skeleton is contained. This is considered to be because the reactivity of the curing reaction is suppressed.
Moreover, since the acid anhydride having the bicyclo skeleton has high solubility in the epoxy resin, the transparency of the obtained adhesive layer can be further improved.
Furthermore, by using the acid anhydride having the bicyclo skeleton, the cured product of the obtained adhesive layer can exhibit excellent mechanical strength, heat resistance, electrical characteristics, and the like.

The acid anhydride having the bicyclo skeleton is not particularly limited, but a compound having a structure represented by the following general formula (a) is preferable.

In general formula (a), X represents a single bond or a double bond linking group, R ³ represents a methylene group or an ethylene group, and R ⁴ and R ⁵ represent a hydrogen atom, a halogen group, an alkoxy group, or a hydrocarbon group. Represents.

Specific examples of the compound having the structure represented by the general formula (a) include nadic acid anhydride and methyl nadic acid anhydride. These may be used independently and 2 or more types may be used together.

Commercially available products of the acid anhydride having the bicyclo skeleton are not particularly limited, and examples thereof include YH-307 and YH-309 (manufactured by Japan Epoxy Resin Co., Ltd.), Ricacid HNA-100 (manufactured by Shin Nippon Rika Co., Ltd.) and the like. These may be used independently and 2 or more types may be used together.

The blending amount of the curing agent is not particularly limited, but when using a curing agent that reacts with the functional group of the epoxy resin in an equivalent amount, a preferable lower limit with respect to the total amount of epoxy groups contained in the adhesive layer is 60 equivalents, A preferred upper limit is 110 equivalents. When the blending amount of the curing agent is less than 60 equivalents, the resulting adhesive layer may not be sufficiently cured. Even if the amount of the curing agent exceeds 110 equivalents, it does not contribute to the curability of the adhesive layer. The more preferable lower limit of the compounding amount of the curing agent is 70 equivalents, and the more preferable upper limit is 100 equivalents.

The adhesive layer may further contain a curing accelerator for the purpose of adjusting the curing speed, the physical properties of the cured product, and the like.
The said hardening accelerator is not specifically limited, For example, an imidazole series hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. These hardening accelerators may be used independently and 2 or more types may be used together. Of these, an imidazole curing accelerator is preferred because it is easy to control the reaction system for adjusting the curing speed and the physical properties of the cured product.

The imidazole-based curing accelerator is not particularly limited. For example, 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group, and an imidazole-based curing accelerator whose basicity is protected with isocyanuric acid (trade name “ 2MA-OK ", manufactured by Shikoku Kasei Kogyo Co., Ltd.). These imidazole type hardening accelerators may be used independently and 2 or more types may be used together.

Moreover, the said imidazole series hardening accelerator may contain a liquid imidazole compound at normal temperature. In this specification, being liquid at room temperature means being in a liquid state at a temperature of 10 to 30 ° C.

In general, by blending the imidazole curing accelerator, the resulting adhesive layer can be cured at a relatively low temperature in a short time, but many of the imidazole curing accelerators are solid at room temperature and are minute. Since it is pulverized and blended, it causes a decrease in transparency. On the other hand, by containing the imidazole compound that is liquid at room temperature, the transparency of the resulting adhesive layer can be further increased. For example, when bonding a semiconductor chip with protruding electrodes, a pattern or position display by a camera is used. Is easily recognized.
Further, as described above, the imidazole compound that is liquid at room temperature is preferably used in combination with an acid anhydride having a sterically bulky bicyclo skeleton. Thereby, the storage stability and thermal stability of the adhesive layer obtained can be improved.
Furthermore, by using the imidazole compound that is liquid at room temperature, it is not necessary to finely pulverize the imidazole compound, and the adhesive layer can be more easily produced.

The imidazole compound that is liquid at normal temperature is not particularly limited as long as it is liquid at normal temperature. For example, 2-ethyl-4-methylimidazole, 1-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole. 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-benzyl-2-ethylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2 -Phenyl-4,5-di- (cyanoethoxymethyl) imidazole, 1,8-diazabicyclo (5.4.0) undecene-7, and derivatives thereof.
The derivative is not particularly limited, and examples thereof include salts such as carboxylate, isocyanurate, phosphate, and phosphonate, and adducts with an epoxy compound.
These may be used independently and 2 or more types may be used together. Of these, 2-ethyl-4-methylimidazole and derivatives thereof are preferable.

The commercial product of the imidazole compound that is liquid at room temperature is not particularly limited. (Japan Epoxy Resin Co., Ltd.), Fuji Cure 7000 (Fuji Kasei Kogyo Co., Ltd.) and the like. These may be used independently and 2 or more types may be used together.

When the adhesive layer contains an imidazole compound that is liquid at normal temperature, the amount of the imidazole compound that is liquid at normal temperature is not particularly limited, but the preferred lower limit for 100 parts by weight of the curing agent is 5 parts by weight, and the preferred upper limit is 50 parts by weight. When the blending amount of the imidazole compound that is liquid at room temperature is less than 5 parts by weight, the resulting adhesive layer may require heating at a high temperature for a long time in order to be cured. When the blending amount of the liquid imidazole compound at room temperature exceeds 50 parts by weight, the storage stability and thermal stability of the obtained adhesive layer may be lowered. The blending amount of the imidazole compound that is liquid at room temperature is such that the more preferred lower limit with respect to 100 parts by weight of the curing agent is 10 parts by weight, and the more preferred upper limit is 30 parts by weight.

It is preferable that the adhesive layer further contains an inorganic filler.
By containing the inorganic filler, the self-cohesive force of the obtained adhesive layer can be improved. Moreover, the linear expansion coefficient of the hardened | cured material of the adhesive layer obtained by containing the said inorganic filler can be lowered | hung, and higher joining reliability can be implement | achieved.

The adhesive layer preferably contains, as the inorganic filler, filler A having an average particle size of less than 0.1 μm and filler B having an average particle size of 0.1 μm or more and less than 1 μm.
Inclusion of the filler A and the filler B increases the viscosity of the composition forming the adhesive layer while maintaining the effect of increasing the self-cohesive force and bonding reliability of the adhesive layer, and It is possible to suppress a decrease in fluidity due to the increase in viscosity and improve coating properties, and at the same time, increase transparency, for example, when bonding a semiconductor chip with a protruding electrode, recognition of a pattern or position display by a camera. Becomes easy.
Moreover, the followability | trackability of the adhesive bond layer with respect to a wafer with a projection electrode can also be improved by suppressing the increase in the viscosity of the composition which forms an adhesive bond layer, and the fluid fall by the increase in this viscosity.

When the average particle size of the filler A is 0.1 μm or more, the transparency of the resulting adhesive layer is lowered, and it is difficult to recognize the pattern or position display by the camera when bonding the semiconductor chip with protruding electrodes. May be. The average particle size of the filler A is preferably less than 0.08 μm.

When the average particle size of the filler B is less than 0.1 μm, the self-aggregating force or bonding reliability of the obtained adhesive layer may be lowered, and the viscosity of the composition forming the adhesive layer is increased. As a result, the fluidity is lowered, the coatability is lowered, and the followability of the adhesive layer to the wafer with protruding electrodes may be lowered. When the average particle diameter of the filler B is 1 μm or more, the transparency of the resulting adhesive layer is lowered, and it is difficult to recognize the pattern or position display by the camera when bonding the semiconductor chip with protruding electrodes. There is. The average particle diameter of the filler B is preferably 0.15 μm or more. Moreover, it is preferable that the average particle diameter of the said filler B is less than 0.8 micrometer.

In addition, in this specification, the average particle diameter of an inorganic filler means the average particle diameter calculated | required from the particle size distribution measurement result in the volume average measured with the laser diffraction type particle size distribution measuring apparatus.

In the filler A, it is preferable that the lower limit of the weight ratio with respect to the filler B is 1/9 and the upper limit is 6/4. When the weight ratio of the filler A to the filler B is less than 1/9, the transparency of the resulting adhesive layer is lowered, and the pattern or position display is recognized by the camera when bonding the semiconductor chip with protruding electrodes. May be difficult. When the weight ratio of the filler A to the filler B exceeds 6/4, the self-cohesive force or bonding reliability of the obtained adhesive layer may be lowered, and the viscosity of the composition forming the adhesive layer may be reduced. May increase and the fluidity may decrease, resulting in a decrease in coatability and a decrease in the followability of the adhesive layer with respect to the wafer with protruding electrodes. The lower limit of the weight ratio of the filler A to the filler B is 2/8, and the more preferable upper limit is 5/5.

The filler A and the filler B are not particularly limited as long as the average particle diameter is within the above range, and examples thereof include silica, alumina, aluminum nitride, boron nitride, silicon nitride, silicon carbide, magnesium oxide, and zinc oxide. It is done. Examples of the filler A and the filler B include silicon, titanium, aluminum, calcium, boron, magnesium and zirconia oxides, and composites thereof. Specific examples of such composites include Examples include silicon-aluminum-boron composite oxide, silicon-titanium composite oxide, and silica-titania composite oxide. Of these, spherical silica is preferable because of excellent slipperiness.
By using the spherical silica, the bonding reliability of the resulting adhesive layer can be further increased, the viscosity of the composition forming the adhesive layer is increased, and the fluidity is lowered due to the increased viscosity. Can be further suppressed, and the applicability and the followability of the adhesive layer to the wafer with protruding electrodes can be further improved.

Moreover, it is also preferable that the said adhesive bond layer contains the inorganic filler whose difference in refractive index with the said epoxy resin is 0.1 or less as said inorganic filler.
By containing such an inorganic filler, without reducing the transparency of the resulting adhesive layer, the self-cohesion force is improved, the mechanical strength of the cured product is ensured, and the linear expansion coefficient is reduced. High bonding reliability.
If an inorganic filler having a refractive index difference of more than 0.1 with the epoxy resin is used, scattering of light transmitted through the resulting adhesive layer increases, and the transparency of the adhesive layer decreases, resulting in a semiconductor with protruding electrodes. When bonding chips, it may be difficult to recognize the pattern or position display by the camera. More preferably, the adhesive layer contains an inorganic filler having a refractive index difference of 0.05 or less from the epoxy resin.

The inorganic filler having a refractive index difference of 0.1 or less from the epoxy resin is not particularly limited, but is a group consisting of oxides of silicon, titanium, aluminum, calcium, boron, magnesium and zirconia, and composites thereof. It is preferable that at least one is selected. Of these, silicon-aluminum-boron composite oxide, silicon-titanium composite oxide, and silica-titania composite oxide are more preferable because they have properties similar to silica generally used as an inorganic filler.

The average particle diameter of the inorganic filler having a refractive index difference of 0.1 or less from the epoxy resin is not particularly limited, but a preferable lower limit is 0.1 μm and a preferable upper limit is 30 μm. When the average particle size is less than 0.1 μm, it is difficult to fill the adhesive layer with an inorganic filler, or the fluidity of the obtained adhesive layer is lowered, and the adhesive performance is lowered. There is. When the average particle diameter exceeds 30 μm, the transparency of the resulting adhesive layer is lowered, and it may be difficult to recognize the pattern or position display by the camera when bonding the semiconductor chip with protruding electrodes. Moreover, when the said average particle diameter exceeds 30 micrometers, since the average particle diameter of an inorganic filler is large, an electrode joining defect may arise.

In particular, the transparency of the adhesive layer can be further enhanced by using an inorganic filler having a refractive index difference of 0.1 or less from the epoxy resin having an average particle diameter of 0.5 μm to 5 μm. Moreover, you may use the inorganic filler whose average particle diameter is a nanometer size as an inorganic filler whose difference in refractive index with the said epoxy resin is 0.1 or less as needed.

The inorganic filler is preferably surface-treated with a coupling agent.
By surface-treating, the aggregation of the inorganic filler can be suppressed, and the affinity with the epoxy resin and the polymer compound having a functional group that reacts with the epoxy resin can be increased. Thereby, it is possible to further improve the bonding reliability of the obtained adhesive layer, and to further suppress the increase in the viscosity of the composition forming the adhesive layer and the decrease in fluidity due to the increase in the viscosity, The coatability and the followability of the adhesive layer to the wafer with protruding electrodes can be further improved.

The coupling agent is not particularly limited, and examples thereof include a silane coupling agent, a titanium coupling agent, and an aluminum coupling agent. Among these, a silane coupling agent is preferable from the viewpoint of affinity with the epoxy resin and dispersibility.

The silane coupling agent is not particularly limited, and examples thereof include silane coupling agents such as vinyl silane, epoxy silane, styryl silane, (meth) acryloxy silane, amino silane, ureido silane, mercapto silane, imidazole silane, isocyanate silane, and alkoxy silane. Is mentioned. Of these, alkoxysilane is preferred.
The alkoxysilane is not particularly limited, but phenyltrimethoxysilane and phenyltriethoxysilane are particularly preferable.
These coupling agents may be used alone or in combination of two or more.

When the adhesive layer contains the inorganic filler, the content of the inorganic filler in the adhesive layer is not particularly limited, but a preferred lower limit is 10% by weight and a preferred upper limit is 70% by weight. When the content of the inorganic filler is less than 10% by weight, it becomes difficult to improve the self-cohesive force of the obtained adhesive layer, or the linear expansion coefficient of the cured product of the obtained adhesive layer increases. It may be difficult to achieve high bonding reliability. When the content of the inorganic filler exceeds 70% by weight, the cured product of the obtained adhesive layer cannot relax thermal stress because of its increased elastic modulus, and it is difficult to achieve high joint reliability. In addition, an increase in the viscosity of the composition forming the adhesive layer and a decrease in fluidity due to the increase in the viscosity may not be sufficiently suppressed. A more preferable lower limit of the content of the inorganic filler in the adhesive layer is 20% by weight, a more preferable upper limit is 60% by weight, a further preferable lower limit is 30% by weight, and a still more preferable upper limit is 55% by weight. A preferred lower limit is 40% by weight.

The adhesive layer may contain a photopolymerization initiator.
The said photoinitiator is not specifically limited, For example, what is activated by irradiating light with a wavelength of 250-800 nm is mentioned. Examples of such photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoinpropyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyldimethyl ketal and acetophenone diethyl ketal, and phosphorous. Finoxide derivative compounds, bis (η5-cyclopentadienyl) titanocene derivative compounds, benzophenone, Michler ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane, etc. These radical photopolymerization initiators. These photoinitiators may be used independently and 2 or more types may be used together.

The adhesive layer may further contain a general resin such as an acrylic resin, a polyimide, a polyamide, or a phenoxy resin, if necessary, and includes a silane coupling agent, a titanium coupling agent, a thickener, You may contain additives, such as a foaming agent.

The adhesive layer preferably has a haze value of 70% or less.
If the haze value exceeds 70%, the transparency of the adhesive layer is lowered, and it may be difficult to recognize the pattern or position display by the camera when bonding the semiconductor chip with protruding electrodes. The adhesive layer preferably has a haze value of 60% or less.

In the present specification, the haze value of the adhesive layer refers to an adhesive film obtained by sandwiching both sides of an adhesive layer having a thickness of 40 μm between two PET films having a thickness of 25 μm. The haze value (%) when measured using a haze meter such as “HM-150” manufactured by the company.

In the adhesive film for semiconductor processing of the present invention, the thickness of the adhesive layer is thinner than the average height of the protruding electrodes of the semiconductor chip with protruding electrodes, and the sum of the thicknesses of the adhesive layer and the electrode protective layer is It is preferably thicker than the average height of the protruding electrodes.
As a result, the obtained adhesive film for semiconductor processing suppresses damage and deformation of the protruding electrodes caused by the contact of the polyester base film which is a hard substrate with the electrode protective layer when the wafer with protruding electrodes is back-ground. In addition, when bonding the semiconductor chip with protruding electrodes after bonding the base material portion leaving only the adhesive layer, high bonding reliability and conduction reliability can be realized.

The thickness of the adhesive layer is more preferably 0.6 or more and less than 1 when the average height of the protruding electrodes of the semiconductor chip with protruding electrodes is 1. When the thickness of the adhesive layer is less than 0.6 of the average height of the protruding electrodes, the bonding agent between the semiconductor chip with protruding electrodes and the substrate or another semiconductor chip is bonded when bonding the semiconductor chip with protruding electrodes. May not be sufficiently filled, and voids may be caught. When the thickness of the adhesive layer is 1 or more of the average height of the protruding electrode, when bonding the semiconductor chip with the protruding electrode, the adhesive bites between the protruding electrode and the counter electrode, resulting in poor conduction, Fillets may form excessively and contaminate the bonding tool.

The method for producing the adhesive film for semiconductor processing of the present invention is not particularly limited. For example, the electrode protective layer is formed on the polyester base film, and then the adhesive layer is formed on the electrode protective layer. The method of doing is mentioned.
As a method of forming the electrode protective layer on the polyester base film, for example, a method of laminating the electrode protective layer using a laminator on at least one surface of the polyester base film, a coextrusion apparatus is used. And a method of drying after coating the composition for forming the electrode protective layer on the polyester base film.

As a method of forming the adhesive layer on the electrode protective layer, for example, a method of applying a composition for forming the adhesive layer on the electrode protective layer and then drying, other release substrate, etc. And the like. After forming the adhesive layer, a release substrate or the like is peeled from the adhesive layer, and the electrode protective layer and the adhesive layer are bonded using a laminator.
The method for applying the composition for forming the electrode protective layer or the adhesive layer is not particularly limited, and examples thereof include a method using comma coating, gravure coating, die coating, casting, and the like.

A method of manufacturing a semiconductor chip mounting body using an adhesive film for semiconductor processing of the present invention, wherein the adhesive layer of the adhesive film for semiconductor processing is bonded to a surface on which a protruding electrode of a wafer with protruding electrodes is formed. A step of integrating, a step of polishing and thinning the wafer with protruding electrodes integrated with the semiconductor processing adhesive film from the back surface, and a polyester base film of the semiconductor processing adhesive film; The step of peeling off the electrode protective layer to obtain a thinned wafer with protruding electrodes with an adhesive layer attached thereto, and the thinned wafer with protruding electrodes with an adhesive layer attached thereto are separated into pieces and bonded. A step of producing a semiconductor chip with a protruding electrode to which an adhesive layer is attached, and the semiconductor chip with a protruding electrode to which the adhesive layer is attached are mounted on a substrate or another semiconductor chip by a face-down bonding method. The method of manufacturing a semiconductor chip mounting body having a degree is also one of the present invention.

Note that, by such a method for manufacturing a semiconductor chip mounting body, for example, a mounting body by flip chip mounting or TSV can be manufactured.

In the method for producing a semiconductor chip package of the present invention, first, the adhesive layer of the adhesive film for semiconductor processing of the present invention is bonded to the surface on which the bump electrodes of the wafer with bump electrodes are formed and integrated. I do.
The step of integrating may be performed under normal pressure, but in order to perform bonding with higher adhesion, it is preferably performed under a vacuum of about 1 torr. The method of bonding is not particularly limited, but a method using a vacuum laminator is preferable.

The wafer with protruding electrodes is not particularly limited, and examples thereof include a wafer made of a semiconductor such as silicon or gallium arsenide and having protruding electrodes made of gold, copper, silver-tin solder, aluminum, nickel or the like on the surface.

In the method for manufacturing a semiconductor chip package according to the present invention, a process of polishing and thinning the wafer with protruding electrodes integrated with the adhesive film for semiconductor processing of the present invention from the back surface is then performed. Thereby, the wafer with protruding electrodes is thinned to a desired thickness.
In the thinning step, the adhesive film for semiconductor processing of the present invention has the electrode protective layer, thereby suppressing damage and deformation of the protruding electrode due to contact with the polyester base film that is a hard base. be able to.

The polishing method is not particularly limited, and a conventionally known method can be used. For example, using a commercially available grinding apparatus (for example, “DFG8540” manufactured by Disco Corporation), the polishing method is 10 to 0. There is a method in which grinding is performed under the condition of a grinding amount of 1 μm / s, and finally, finishing is performed by CMP.

In the mounting method of the manufacturing method of the semiconductor chip mounting body of the present invention, the electrode is then irradiated by irradiating the adhesive film for semiconductor processing of the present invention bonded to the thinned wafer with protruding electrodes with energy rays. You may perform the process of semi-hardening a protective layer and / or the said adhesive bond layer. As a result, the self-cohesive force of the electrode protective layer and / or the adhesive layer is increased and the adhesive force of the adhesive layer is reduced, so that the electrode protective layer and the adhesive layer are easily separated.
At this time, since the adhesive layer is not “completely cured” but “semi-cured”, the adhesive layer still has a sufficient adhesive force when mounted on a substrate or another semiconductor chip in a later step. It can be demonstrated.

In the present specification, semi-cured means that the gel fraction is 10 to 60% by weight. For example, an adhesive layer having a gel fraction of less than 10% by weight has high fluidity, lacks shape retention, and is difficult to cut cleanly when separating wafers with protruding electrodes. Sometimes it becomes. Further, an adhesive layer having a gel fraction exceeding 60% by weight has insufficient adhesive strength, and it may be difficult to bond a semiconductor chip to which such an adhesive layer is attached.

In the present specification, the gel fraction is semi-cured in a solvent having a solubility that can sufficiently dissolve the composition for forming the electrode protective layer and the adhesive layer, such as methyl acetate or methyl ethyl ketone. It can be calculated by the following formula (1) from the amount of undissolved material obtained by infiltrating the adhesive film, stirring for a sufficient time, filtering using a mesh, and drying.
Gel fraction (% by weight) = 100 × (W ₂ −W ₀ ) / (W ₁ −W ₀ ) (1)
In Formula (1), W ₀ represents the weight of the substrate, W ₁ represents the weight of the adhesive film for semiconductor processing before being immersed in the solvent, and W ₂ is the adhesive for semiconductor processing after being immersed in the solvent and dried. Represents the weight of the film.

The semi-cured state is obtained by adjusting the composition of the electrode protective layer and the adhesive layer, or when the electrode protective layer and the adhesive layer contain a compound having a photocurable functional group, energy rays. This can be easily achieved by adjusting the amount of irradiation.
For example, when the adhesive layer contains an acrylic resin having a double bond that can be cross-linked by radicals as a compound having a photocurable functional group, radicals generated by irradiation with energy rays are acrylate group double bonds. It reacts with the functional group that reacts to form a three-dimensional network structure to form the semi-cured state.

The method of irradiating the energy beam is not particularly limited. For example, using an ultra-high pressure mercury lamp from the polyester-based substrate film side, the ultraviolet ray near 365 nm has an illuminance of 60 mW / cm ² on the wafer surface. Examples include a method of adjusting the illuminance and irradiating for 20 seconds (integrated light amount 1200 mJ / cm ² ).

In the method for manufacturing a semiconductor chip package according to the present invention, the thinned protrusion to which the adhesive layer is adhered after peeling the polyester base film and the electrode protective layer of the adhesive film for semiconductor processing according to the present invention. A step of obtaining a wafer with electrodes is performed.
In the step of obtaining the thinned wafer with protruding electrodes to which the adhesive layer is adhered, in the adhesive film for semiconductor processing of the present invention, the self-cohesive force of the electrode protective layer and the adhesive layer is such that the electrode protective layer and the adhesive layer are By being larger than the interfacial adhesive force with the adhesive layer, it is possible to perform peeling with a low load without adhesive residue.

In the method for manufacturing a semiconductor chip package according to the present invention, the thinned wafer with protruding electrodes to which the adhesive layer is adhered is then separated into individual pieces to produce a semiconductor chip with protruding electrodes to which the adhesive layer is adhered. Perform the process.
There are no particular limitations on the method of dividing the thinned wafer with protruding electrodes to which the adhesive layer is attached, and examples thereof include a method of cutting and separating using a conventionally known grindstone, laser, or the like.

In the method for manufacturing a semiconductor chip package according to the present invention, a process of mounting the semiconductor chip with protruding electrodes, to which the adhesive layer is adhered, on a substrate or another semiconductor chip by a face-down bonding method is then performed.
In this specification, the mounting of a semiconductor chip includes both a case where a semiconductor chip is mounted on a substrate and a case where a semiconductor chip is further mounted on one or more semiconductor chips mounted on the substrate. Including.

In the method for manufacturing a semiconductor chip package according to the present invention, further stable mounting can be realized by performing a step of completely curing the adhesive layer by heating.

In the method for producing a semiconductor chip package of the present invention, the thickness of the adhesive layer of the adhesive film for semiconductor processing of the present invention is smaller than the average height of the protruding electrodes of the semiconductor chip with protruding electrodes, and the semiconductor processing of the present invention The sum of the thicknesses of the adhesive layer and the electrode protective layer of the adhesive film is preferably thicker than the average height of the protruding electrodes. Especially, the thickness of the adhesive layer of the adhesive film for semiconductor processing of the present invention is more preferably 0.6 or more and less than 1 when the average height of the protruding electrodes of the semiconductor chip with protruding electrodes is 1.
As a result, in the thinning step, the adhesive film for semiconductor processing of the present invention has the electrode protective layer, so that the protruding electrode is damaged and deformed by the contact with the polyester base film which is a hard base. In the process of mounting the semiconductor chip with protruding electrodes to which the adhesive layer is adhered by the face-down bonding method, high bonding reliability and conduction reliability can be realized.

In the above description, after performing the process of obtaining a thinned wafer with protruding electrodes to which an adhesive layer is adhered, the wafer is separated into individual pieces to produce semiconductor chips with protruding electrodes to which an adhesive layer is adhered. The process was performed. As another embodiment, a wafer laminate is manufactured by laminating another wafer via an adhesive layer on a thinned wafer with protruding electrodes to which an adhesive layer is adhered. It is possible to obtain a stacked body of semiconductor chips to which an adhesive layer is adhered by batch-dividing them into individual pieces.

According to the present invention, at the time of back grinding of a wafer with protruding electrodes, damage and deformation of the protruding electrodes can be suppressed without causing peeling, and after back grinding, only the adhesive layer is left and the substrate portion is peeled off. In this case, it is possible to provide an adhesive film for semiconductor processing that can be peeled off with a low load without adhesive residue. Moreover, according to this invention, the manufacturing method of the semiconductor chip mounting body excellent in joining reliability using this adhesive film for semiconductor processing can be provided.

Hereinafter, embodiments of the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

Example 1
(1) Manufacture of adhesive film for semiconductor processing On one side of a film made of polyethylene terephthalate (PET) having a thickness of 25 μm as a base film (trade name “Tetron”, manufactured by Teijin DuPont), acrylic resin (2-monomer as monomer) Polyhexyl acrylate containing ethylhexyl acrylate and 2-hydroxyethyl acrylate) and 1.5 parts by weight of Coronate L-45 (manufactured by Nippon Polyurethane Industry Co., Ltd.) diluted with ethyl acetate with respect to 100 parts by weight of this acrylic resin The solution was applied using a comma coater, dried at 80 ° C. for 10 minutes, and then cured at 40 ° C. for 3 days to form an electrode protective layer having a thickness of 15 μm. Moreover, according to the composition of Table 1, each material shown below was stirred and mixed using a homodisper to prepare an adhesive composition. On the release PET film, the obtained adhesive composition was applied by a comma coating method so that the thickness after drying was 40 μm, and dried at 100 ° C. for 5 minutes to form an adhesive layer.
Subsequently, the obtained electrode protective layer and the adhesive layer were bonded together with a laminator to obtain an adhesive film for semiconductor processing.

(Epoxy resin)
・ HP-7200L (Dicyclopentadiene type epoxy resin, manufactured by DIC)
EXA-4710 (Naphthalene type epoxy resin, manufactured by DIC)

(Epoxy group-containing acrylic resin)
・ G-2050M (glycidyl group-containing acrylic resin, weight average molecular weight 200,000, manufactured by NOF Corporation)
・ G-017581 (glycidyl group-containing acrylic resin, weight average molecular weight 10,000, manufactured by NOF Corporation)

(Curing agent)
・ YH-309 (acid anhydride curing agent, manufactured by JER)

(Curing accelerator)
・ Fujicure 7000 (imidazole compound that is liquid at room temperature, manufactured by Fuji Kasei Kogyo Co., Ltd.)

(Inorganic filler)
(1. Filler A)
SX009-MJF (phenyltrimethoxysilane surface-treated spherical silica, average particle size 0.05 μm, manufactured by Admatechs)
(2. Filler B)
SE-1050-SPT (phenyltrimethoxysilane surface-treated spherical silica, average particle size 0.3 μm, manufactured by Admatechs)

(Other)
AC-4030 (stress relaxation rubber polymer, manufactured by Ganz Kasei Co., Ltd.)

(2) Peel test and interfacial peelability The release PET film that protects the adhesive layer of the obtained adhesive film for semiconductor processing is peeled off, and a vacuum laminator (ATM-812M, manufactured by Takatori) is used at 70 ° C., 1 torr. After bonding to the surface on which the bump electrodes of the bump electrode (wafer with an average height of the bump electrode of 45 μm, the diameter of the bump electrode of 30 μm, and a 50 μm pitch Cu-solder pillar) are formed, Tensilon (AG-IS, Using a Shimadzu Corporation), the peel strength was measured under the conditions of 25 ° C., a pulling angle of 180 °, and a pulling speed of 300 mm / min. In addition, when interfacial peeling occurs between the electrode protective layer and the adhesive layer, and no adhesive residue is observed in either the electrode protective layer or the adhesive layer, ○, between the electrode protective layer and the adhesive layer Interfacial peelability was observed with x when one of them was cohesive fractured and adhesive residue was generated.

(3) Mounting of semiconductor chip The release PET film for protecting the adhesive layer of the obtained adhesive film for semiconductor processing is peeled off, and conditions of 70 ° C. and 1 torr using a vacuum laminator (ATM-812M, manufactured by Takatori) Then, the wafer was bonded to the surface on which the bump electrodes of the bump electrode were formed (Cu-solder pillar having a diameter of 300 mm, a thickness of 750 μm, an average height of the bump electrodes of 45 μm, a bump electrode diameter of 30 μm, and a pitch of 50 μm).
Next, this was attached to a grinding apparatus, and was ground until the thickness of the wafer with protruding electrodes was about 100 μm. At this time, the operation was performed while water was sprayed on the wafer with bump electrodes so that the temperature of the wafer with bump electrodes did not increase due to frictional heat of grinding. After grinding, the surface was mirror-finished by polishing with an aqueous solution of silica dispersed in alkali by a CMP (Chemical Mechanical Polishing) process using a polishing apparatus.

A semiconductor wafer is removed from the polishing apparatus, and a dicing tape (PE tape # 6318-B, manufactured by Sekisui Chemical Co., Ltd., thickness 70 μm, polyethylene base material, adhesive is applied to the surface of the wafer with bump electrodes on which the semiconductor processing adhesive film is not attached. A rubber-based adhesive material (10 μm) was attached and mounted on a dicing frame. Next, the base film and the electrode protective layer of the adhesive film for semiconductor processing were peeled off to obtain a thinned wafer with protruding electrodes having an adhesive layer attached thereto.

Using a dicing machine DFD651 (manufactured by DISCO Corporation), the wafer with a protruding electrode after thinning to which an adhesive layer is adhered is divided into chips of 10 mm × 10 mm at a feed rate of 50 mm / second, and separated into individual pieces. A semiconductor chip with protruding electrodes to which a layer was attached was obtained.
The obtained semiconductor chip with protruding electrodes to which the adhesive layer was adhered was dried at 80 ° C. for 10 minutes in a hot air drying furnace, and then a load of 0.50 MPa, temperature using a bonding apparatus (manufactured by Toray Engineering Co., Ltd., FC-3000). After mounting by pressure bonding at 280 ° C. for 10 seconds, curing was performed at 190 ° C. for 30 minutes to obtain a semiconductor chip mounting body.

(Examples 2 to 4 and Comparative Examples 1 to 3)
A semiconductor chip mounting body was obtained in the same manner as in Example 1 except that the type and thickness of the base film, the presence / absence of the electrode protective layer, and the thickness were changed as shown in Table 2.

(Evaluation)
The following evaluation was performed about the semiconductor chip mounting body etc. which were obtained by the Example and the comparative example. The results are shown in Table 2.

(1) When manufacturing a back grind (BG) resistant semiconductor chip mounting body, no interfacial delamination occurs between the electrode protective layer and the adhesive layer during back grinding of the wafer with protruding electrodes, and cracking of the wafer with protruding electrodes ◯ when it did not occur, △ when the interface peeling between the electrode protection layer and the adhesive layer partially occurred at the edge of the wafer with protruding electrodes, and × when the wafer with protruding electrodes cracked As a result, the back grind (BG) resistance was evaluated.

(2) Existence of bump electrode damage When manufacturing a semiconductor chip mounting body, the state of the bump electrode after back grinding is observed from above the base film with an optical microscope, and the collapse and deformation of the bump electrode are evaluated according to the following criteria. did.
○ when the deformation of the top of the protruding electrode is less than 5 μm, Δ when the deformation of the top of the protruding electrode is 5 μm or more and less than 10 μm, and the deformation of the top of the protruding electrode is 10 μm or more The case where there existed was set as x.

(3) When manufacturing a substrate peelable semiconductor chip mounting body, the case where no crack of the wafer with protruding electrodes occurred when peeling the substrate film and the electrode protective layer leaving the adhesive layer, ○, protruding electrode The case where the crack of the attached wafer occurred was evaluated as x, and the substrate peelability was evaluated.

(4) Conductivity An external electrode was connected to the obtained semiconductor chip mounting body, and the change in resistance at the electrode was tracked with a tester (CDM-06, manufactured by CUSTOM) to evaluate the conductivity. The case where conduction was confirmed and a constant resistance was maintained was evaluated as ◯, the conduction was confirmed, but the resistance value was blurred, and the case where conduction was not possible was marked as x.

According to the present invention, at the time of back grinding of a wafer with protruding electrodes, damage and deformation of the protruding electrodes can be suppressed without causing peeling, and after back grinding, only the adhesive layer is left and the substrate portion is peeled off. In this case, it is possible to provide an adhesive film for semiconductor processing that can be peeled off with a low load without adhesive residue. Moreover, according to this invention, the manufacturing method of the semiconductor chip mounting body excellent in joining reliability using this adhesive film for semiconductor processing can be provided.

Claims (6)

An adhesive film for semiconductor processing that holds a wafer with a protruding electrode during back grinding of the wafer with a protruding electrode, and functions as an adhesive when mounting a semiconductor chip with a protruding electrode,
A polyester base film, an electrode protective layer, and an adhesive layer are laminated in this order,
After bonding to a wafer with protruding electrodes, when a peel test is performed under the conditions of 25 ° C., pulling angle 180 °, pulling speed 300 mm / min, interfacial peeling occurs between the electrode protective layer and the adhesive layer. An adhesive film for semiconductor processing, wherein no adhesive residue is observed in any of the electrode protective layer and the adhesive layer, and the peel strength is 5 to 400 gf / 25 mm. The thickness of the adhesive layer is thinner than the average height of the protruding electrodes of the semiconductor chip with protruding electrodes, and the sum of the thicknesses of the adhesive layer and the electrode protective layer is thicker than the average height of the protruding electrodes. Item 2. An adhesive film for semiconductor processing according to Item 1. The adhesive film for semiconductor processing according to claim 2, wherein the thickness of the adhesive layer is 0.6 or more and less than 1 when the average height of the protruding electrodes of the semiconductor chip with protruding electrodes is 1. A method for producing a semiconductor chip package using the adhesive film for semiconductor processing according to claim 1,
Bonding the adhesive layer of the adhesive film for semiconductor processing to the surface on which the bump electrodes of the bump electrode wafer are formed, and integrating them;
Polishing and thinning the wafer with protruding electrodes integrated with the semiconductor processing adhesive film from the back surface;
Peeling the polyester base film and the electrode protective layer of the adhesive film for semiconductor processing to obtain a wafer with a protruding electrode after thinning to which an adhesive layer is attached;
Separating the thinned wafer with protruding electrodes with the adhesive layer attached thereto, and producing a semiconductor chip with protruding electrodes with an adhesive layer attached thereto;
And mounting the semiconductor chip with protruding electrodes, to which the adhesive layer is adhered, on a substrate or another semiconductor chip by a face-down bonding method. The thickness of the adhesive layer of the adhesive film for semiconductor processing is thinner than the average height of the protruding electrode of the semiconductor chip with protruding electrodes, and the sum of the thickness of the adhesive layer and the electrode protective layer of the adhesive film for semiconductor processing is the protrusion. 5. The method of manufacturing a semiconductor chip package according to claim 4, wherein the thickness is greater than the average height of the electrodes. 6. The semiconductor according to claim 5, wherein the thickness of the adhesive layer of the adhesive film for semiconductor processing is 0.6 or more and less than 1 when the average height of the protruding electrodes of the semiconductor chip with protruding electrodes is 1. Manufacturing method of chip mounting body.