JP2004304210A5 - - Google Patents
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- Publication number
- JP2004304210A5 JP2004304210A5 JP2004225321A JP2004225321A JP2004304210A5 JP 2004304210 A5 JP2004304210 A5 JP 2004304210A5 JP 2004225321 A JP2004225321 A JP 2004225321A JP 2004225321 A JP2004225321 A JP 2004225321A JP 2004304210 A5 JP2004304210 A5 JP 2004304210A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- insulating film
- forming
- interlayer insulating
- island region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 96
- 239000011229 interlayer Substances 0.000 claims 60
- 239000012535 impurity Substances 0.000 claims 34
- 239000000758 substrate Substances 0.000 claims 30
- 238000004519 manufacturing process Methods 0.000 claims 21
- 238000000034 method Methods 0.000 claims 21
- 125000006850 spacer group Chemical group 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000011347 resin Substances 0.000 claims 6
- 229920005989 resin Polymers 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 239000010410 layer Substances 0.000 claims 5
- 238000000059 patterning Methods 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004225321A JP4246123B2 (ja) | 2004-08-02 | 2004-08-02 | 半導体集積回路の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004225321A JP4246123B2 (ja) | 2004-08-02 | 2004-08-02 | 半導体集積回路の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27345197A Division JP4534261B2 (ja) | 1997-09-20 | 1997-09-20 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004304210A JP2004304210A (ja) | 2004-10-28 |
| JP2004304210A5 true JP2004304210A5 (https=) | 2007-07-12 |
| JP4246123B2 JP4246123B2 (ja) | 2009-04-02 |
Family
ID=33411518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004225321A Expired - Lifetime JP4246123B2 (ja) | 2004-08-02 | 2004-08-02 | 半導体集積回路の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4246123B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882414B (zh) * | 2015-05-06 | 2018-07-10 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及其结构 |
-
2004
- 2004-08-02 JP JP2004225321A patent/JP4246123B2/ja not_active Expired - Lifetime
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