JP2004292308A - InP基板及びその製造方法 - Google Patents
InP基板及びその製造方法 Download PDFInfo
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- JP2004292308A JP2004292308A JP2004071392A JP2004071392A JP2004292308A JP 2004292308 A JP2004292308 A JP 2004292308A JP 2004071392 A JP2004071392 A JP 2004071392A JP 2004071392 A JP2004071392 A JP 2004071392A JP 2004292308 A JP2004292308 A JP 2004292308A
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- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000565 sealant Substances 0.000 claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- 238000002835 absorbance Methods 0.000 claims description 10
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 abstract description 15
- 125000004429 atom Chemical group 0.000 abstract description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 14
- 239000013078 crystal Substances 0.000 description 21
- 239000007788 liquid Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007847 structural defect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
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Abstract
【解決手段】 本発明に係るInP基板の製造方法は、FeドープしたInP融液22を封止剤26で封止しつつInPインゴットを作製して、InP基板を作製するInP基板の製造方法であって、封止剤26として、含有水分が200重量ppm以下の酸化ホウ素(B2O3)を用いることを特徴とする。このInP基板の製造方法においては、含有水分量を200重量ppm以下にして、In空孔を占有するH原子の数を低減している。そのため、InP基板にドープされたFeの原子が、In原子に置換されやすくなるため、Feの析出が抑制される。
【選択図】 図1
Description
C=kCo(1−g)k-1
ここで、kは偏析係数、CoはInP原料融液中のFeの初期濃度、gは固化率であり、gは成長開始時においては0で、成長終了時に1となる。
Claims (8)
- FeドープしたInP融液を封止剤で封止しつつInPインゴットを作製して、InP基板を作製するInP基板の製造方法であって、
前記封止剤として、含有水分が200重量ppm以下の酸化ホウ素を用いる、InP基板の製造方法。 - 前記酸化ホウ素の含有水分が100重量ppm以下である、請求項1に記載のInP基板の製造方法。
- 前記InPインゴットをLEC法又はVCZ法により作製する、請求項1又は2に記載のInP基板の製造方法。
- 前記InPインゴットをVB法により作製する、請求項1又は2に記載のInP基板の製造方法。
- 熱分解窒化ホウ素製の容器を用い、この容器に前記InPインゴットとなるべきInP融液及び前記封止剤を収容して、前記InPインゴットを作製する、請求項1〜4のいずれか一項に記載のInP基板の製造方法。
- 前記InPインゴットのFe濃度が、前記InPインゴットの肩部において1E16atoms/cm3未満である、請求項1〜5のいずれか一項に記載のInP基板の製造方法。
- 請求項1〜6のいずれか一項に記載のInP基板の製造方法によって作製されたInP基板。
- 波数が2316cm-1のときの吸収ピークを吸光度で示した場合に、この吸光度が0.1未満である、請求項7に記載のInP基板。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006327895A (ja) * | 2005-05-27 | 2006-12-07 | Sumitomo Electric Ind Ltd | 化合物半導体単結晶の製造方法とそのための縦型pbn容器およびその容器の選別方法 |
JP2007274150A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | サーバ装置および映像配信方法 |
JP2010202504A (ja) * | 2009-02-09 | 2010-09-16 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体結晶の製造方法、iii−v族化合物半導体基板の製造方法およびiii−v族化合物半導体基板 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006327895A (ja) * | 2005-05-27 | 2006-12-07 | Sumitomo Electric Ind Ltd | 化合物半導体単結晶の製造方法とそのための縦型pbn容器およびその容器の選別方法 |
JP2007274150A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | サーバ装置および映像配信方法 |
JP4585479B2 (ja) * | 2006-03-30 | 2010-11-24 | 株式会社東芝 | サーバ装置および映像配信方法 |
JP2010202504A (ja) * | 2009-02-09 | 2010-09-16 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体結晶の製造方法、iii−v族化合物半導体基板の製造方法およびiii−v族化合物半導体基板 |
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