JP2004266130A - Wiring board and its producing method, semiconductor device and electronic apparatus - Google Patents

Wiring board and its producing method, semiconductor device and electronic apparatus Download PDF

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Publication number
JP2004266130A
JP2004266130A JP2003055641A JP2003055641A JP2004266130A JP 2004266130 A JP2004266130 A JP 2004266130A JP 2003055641 A JP2003055641 A JP 2003055641A JP 2003055641 A JP2003055641 A JP 2003055641A JP 2004266130 A JP2004266130 A JP 2004266130A
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layer
wiring board
wiring
fine particles
manufacturing
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JP3781118B2 (en
Inventor
Tetsuya Otsuki
哲也 大槻
Hirofumi Kurosawa
弘文 黒沢
Hiroshi Miki
浩 三木
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2003055641A priority Critical patent/JP3781118B2/en
Priority to CNB2004100082084A priority patent/CN1301048C/en
Priority to US10/792,266 priority patent/US7189598B2/en
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Abstract

<P>PROBLEM TO BE SOLVED: To produce a highly reliable wiring board simply. <P>SOLUTION: An accept layer 10 is made of a thermosetting resin precursor. A wiring layer 14 is made of dispersion solution containing conductive fine particles. Heat for bonding the conductive fine particles is generated through the curing reaction of the thermosetting resin precursor and fed to the accept layer 10 and the wiring layer 14. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、配線基板及びその製造方法、半導体装置並びに電子機器に関する。
【０００２】
【発明の背景】
従来、プリント配線板は、基材に銅箔を貼りエッチングにより配線を形成することで製造されていた。これによれば、プロセスが複雑であり、エッチングのために、高価なマスクが必要であるし、多くの設備が必要であった。そこで、近年、表面処理の施された基材に金属インクを吐出して配線を形成する技術が開発されている。表面処理として、フッ素被膜を基材に形成し（ＦＡＳ（Ｆｌｕｏｒｉｃ Ａｌｋｙｌ Ｓｉｌａｎｅ）処理）、これを多孔質にすることで金属インクの表面張力をコントロールする場合、配線と基材との密着性を高めることが難しかった。または、表面処理として、ポリビニルアルコールを基材に塗布して膨潤性を有する受理層を形成する方法や、水酸化アルミニウムを基材に塗布して空隙を有する受理層を形成する方法では、受理層は吸水性が高いために水分を含みやすく内層として好ましくない。また、配線と基材との密着性を高めることも難しかった。
【０００３】
本発明の目的は、信頼性の高い配線基板を簡単に製造することにある。
【０００４】
【課題を解決するための手段】
（１）本発明に係る配線基板の製造方法は、熱硬化性樹脂前駆体により受理層を形成すること、
前記受理層上に、導電性微粒子を含む分散液により、配線層を形成すること、及び、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させる熱を、前記受理層及び前記配線層に供給すること、
を含む。本発明によれば、導電性微粒子を含む分散液を設けるときに、受理層は未だ硬化反応する前の状態であるから、にじみや溜まり（Ｂｕｌｇｅ）の発生を抑制することができる。また、熱硬化した受理層と、相互に結合した導電性微粒子を含む配線層とは密着性が高い。そのため、信頼性の高い配線基板を簡単に製造することができる。
（２）この配線基板の製造方法において、
前記熱硬化性樹脂前駆体としてポリイミド前駆体を使用し、前記熱によって前記ポリイミド前駆体を重合させてもよい。
（３）この配線基板の製造方法において、
前記導電性微粒子を含む前記分散液を吐出して前記配線層を形成してもよい。（４）この配線基板の製造方法において、
前記受理層を基材上に形成してもよい。
（５）この配線基板の製造方法において、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させた後に、前記基材を前記受理層から除去することをさらに含んでもよい。
（６）本発明に係る配線基板は、上記方法によって製造されてなる。
（７）本発明に係る半導体装置は、上記配線基板と、
前記配線基板と電気的に接続された半導体チップと、
を有する。
（８）本発明に係る電子機器は、上記半導体装置を有する。
【０００５】
【発明の実施の形態】
以下、本発明の実施の形態について図面を参照して説明する。
【０００６】
（第１の実施の形態）
図１（Ａ）〜図３（Ｃ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。本実施の形態では、図１（Ａ）に示すように、熱硬化性樹脂前駆体（例えば、ポリイミド前駆体やエポキシ樹脂前駆体等の有機材料）によって、受理層１０を形成する。熱硬化反応前であるため、熱硬化性樹脂前駆体は、液状又はペースト状であってもよく、受理層１０は粘性を持っていてもよい。受理層１０を形成する材料は、感光性を有してもよい。受理層１０は、熱硬化性樹脂前駆体をスピンコートによって拡げることで形成してもよいし、熱硬化性樹脂前駆体の吐出（例えば、その液滴の吐出）によって形成してもよい。必要に応じて、受理層１０の乾燥（例えば、１５０℃で１０分間）を行ってもよい。受理層１０は、表面が平坦になるように形成してもよい。受理層１０は絶縁性を有し、（第１の）絶縁層ということができる。
【０００７】
受理層１０は、基材（例えば基板）１２上に形成してもよい。基材１２は、銅などの金属であってもよいし、ポリイミドやエポキシ等の樹脂であってもよいし、ガラスであってもよい。
【０００８】
図１（Ｂ）に示すように、受理層１０上に配線層（以下、第１の配線層ともいう。）１４を形成する。配線層１４は、導電性微粒子を含む分散液（例えば、金属インク）によって形成する。導電性微粒子は、金や銀等の酸化しにくく、電気抵抗の低い材料から形成されていてもよい。金の微粒子を含む分散液として、真空冶金株式会社の「パーフェクトゴールド」、銀の微粒子を含む分散液として、同社の「パーフェクトシルバー」を使用してもよい。なお、微粒子とは、特に大きさを限定したものではなく、分散媒とともに吐出できる粒子である。配線層１４の形成は、インクジェット法やバブルジェット（登録商標）法などの導電性微粒子を含む分散液の吐出（例えば、その液滴の吐出）によって行ってもよいし、マスク印刷やスクリーン印刷によって行ってもよい。導電性微粒子は、反応を抑制するために、コート材によって被覆されていてもよい。分散媒は、乾燥しにくく再溶解性のあるものであってもよい。導電性微粒子は、分散媒中に均一に分散していてもよい。
【０００９】
本実施の形態によれば、導電性微粒子を含む分散液は、熱硬化性樹脂前駆体上に設けられるので、配線層１４を形成するときに、にじみや溜まり（Ｂｕｌｇｅ）の発生を抑制することができる。配線層１４を乾燥させて、分散媒を揮発させ、導電性微粒子（あるいは導電性微粒子及びコート材）を残してもよい。乾燥は、室温以上１００℃以下の温度で行ってもよい。または、受理層１０を構成する熱硬化性樹脂前駆体の熱硬化反応が生じない温度（例えば２００℃程度）で、配線層１４を加熱してもよい。これにより、導電性微粒子を被覆するコート材を分解してもよい。
【００１０】
図１（Ｃ）に示すように、受理層１０及び配線層１４に熱を供給する。熱は、受理層１０を構成する熱硬化性樹脂前駆体を硬化反応（例えば重合）させる温度（例えば、３００〜４００℃程度）であってもよい。熱は、配線層１４の導電性微粒子を相互に結合（例えば焼結）させる温度（例えば、３００〜６００℃程度）であってもよい。熱の供給時間は１時間程度であってもよい。こうすることで、熱硬化性樹脂前駆体は、不融不溶の樹脂（熱硬化性樹脂）となる。例えば、ポリイミド前駆体はポリイミドとなり、エポキシ樹脂前駆体はエポキシ樹脂となる。また、導電性微粒子は、導電膜又は導電層となる。熱硬化性樹脂前駆体が硬化し導電性粒子が相互に結合すると、受理層１０及び配線層１４は密着性が高くなるので、信頼性の高い配線基板が得られる。
【００１１】
図１（Ｄ）に示すように、配線層１４を覆うように、絶縁層（第２の絶縁層ともいう。）２０を形成してもよい。絶縁層２０の材料及び形成方法は、受理層１０の内容が該当してもよい。さらに、絶縁層２０は、感光性を有していてもよい。絶縁層２０を設ける場合、その前に少なくとも配線層１４から分散媒を揮発させておく。本実施の形態では、配線層１４の導電性微粒子を相互に結合（例えば焼結）させた後に絶縁層２０を形成する。
【００１２】
図２（Ａ）に示すように、絶縁層２０上にマスク層２２を形成してもよい。マスク層２２は、絶縁層２０に形成するコンタクトホール２４に対応するように形成する。例えば、光（例えば紫外線）に感応して硬化する材料で絶縁層２０を形成する場合、コンタクトホール２４の形成位置にマスク層２２を形成する。マスク層２２は、樹脂の吐出又は印刷によって形成してもよい。
【００１３】
図２（Ｂ）に示すように、絶縁層２０に光（例えば紫外線）を照射して、絶縁層２０のマスク層２２から露出した部分を硬化させる。この場合、絶縁層２０の硬化は、現像可能な程度に硬化しているが硬化反応（重合又は架橋結合）が完全に終わっていない状態（例えば粘性を有する状態）で止める。そして、現像を行って、図２（Ｃ）に示すように、絶縁層２０にコンタクトホール２４を形成する。
【００１４】
続いて、図２（Ｄ）に示すように、絶縁層２０上に第２の配線層２６を形成する。第２の配線層２６の材料及び形成方法は、上述した第１の配線層１４の内容が該当してもよい。第２の配線層２６に対して、絶縁層２０は、上述した受理層１０と同じ機能を果たすので、絶縁層２０を受理層ということもできる。第２の配線層２６は、コンタクトホール２４を介して、第１の配線層１４に接触するように形成する。第２の配線層２６を、導電性微粒子を含む分散液で形成する場合、これをコンタクトホール２４に吐出してもよい。
【００１５】
図３（Ａ）に示すように、熱を供給することによって、絶縁層２０を構成する材料を硬化反応させ、第２の配線層２６の導電性微粒子を相互に結合させてもよい。絶縁層２０及び第２の配線層２６は、受理層１０及び第１の配線層１４について上述した特徴を有し、同じ作用効果を達成してもよい。
【００１６】
図３（Ｂ）に示すように、第２の配線層２６を覆うように第３の絶縁層３０を形成してもよい。第３の絶縁層３０の材料及び形成方法は、絶縁層２０の内容が該当してもよい。また、第３の絶縁層３０にコンタクトホール３４を形成し、第２の配線層２６上にコンタクトポスト３６を形成してもよい。
【００１７】
図３（Ｃ）に示すように、コンタクトポスト３６上に端子部３８を形成してもよい。端子部３８は、コンタクトポスト３６の上面よりも大きくなるように形成してもよい。その場合、端子部３８の周縁部が第３の絶縁層３０上に載っていてもよい。端子部３８は、ＮｉやＣｕなどの無電解めっき等によって形成することができる。
【００１８】
さらに、図３（Ｃ）に示すように、基材１２を受理層１０から除去してもよい。例えば、基材１２として銅板を使用し、塩化第二鉄などのエッチング液に基材１２を浸漬してこれを溶解してもよい。この工程は、熱硬化性樹脂前駆体（受理層１０、第２及び第３の絶縁層２０，３０）を硬化反応させ、導電性微粒子（第１及び第２の配線層１４，２６）を相互に結合させた後に行う。こうすることで、薄膜積層配線基板が得られる。
【００１９】
本実施の形態によれば、熱硬化した受理層１０と、相互に結合した導電性微粒子を含む配線層１４との密着性が高い。そのため、信頼性の高い配線基板を簡単に製造することができる。
【００２０】
（第２の実施の形態）
図４（Ａ）〜図４（Ｃ）は、本発明の第２の実施の形態に係る配線基板の製造方法を説明する図である。本実施の形態では、上述した受理層１０上に配線層４０を形成する。また、上述した基材１２を使用してもよい。受理層１０及び配線層４０の材料及び形成方法は、第１の実施の形態で説明した内容を適用してもよい。配線層４０は、コンタクトポスト４２を有するように形成する。そして、配線層４０を覆うように絶縁層４４を形成する。絶縁層４４はコンタクトポスト４２を覆ってもよい。絶縁層４４の材料及び形成方法は、第１の実施の形態で説明した絶縁層２０の内容を適用してもよい。本実施の形態でも、受理層１０を熱硬化させ、配線層４０の導電性微粒子を相互に結合してから絶縁層４４を設ける。
【００２１】
図４（Ｂ）に示すように、絶縁層４４から少なくともコンタクトポスト４２の上面を露出させる。絶縁層４４が薄くなるようにその表面部を除去してもよい。絶縁層４４の表面部は溶解させてもよい。
【００２２】
図４（Ｃ）に示すように、絶縁層４４上に第２の配線層４６を形成する。第２の配線層４６の材料及び形成方法は、第１の実施の形態で説明した第２の配線層２６の内容を適用してもよい。第２の配線層４６に対して、絶縁層４４は、上述した受理層１０と同じ機能を果たすので、絶縁層４４を受理層ということもできる。第２の配線層２６は、コンタクトポスト４２上を通るように形成する。その後、第２の配線層４６の導電性微粒子を相互に結合させて、積層配線基板を製造することができる。本実施の形態には、第１の実施の形態で説明した内容を適用することができる。本実施の形態でも、第１の実施の形態で説明した作用効果を得ることができる。
【００２３】
（第３の実施の形態）
図５（Ａ）〜図５（Ｂ）は、本発明の第３の実施の形態に係る配線基板の製造方法を説明する図である。本実施の形態では、第２の実施の形態で説明したように、受理層１０上に配線層４０を形成し、その上に絶縁層４４を形成する。絶縁層４４は、コンタクトポスト４２を覆うように形成する。その他の詳細は、図４（Ａ）を参照して説明した内容と同じである。
【００２４】
図５（Ａ）に示すように、絶縁層４４を構成する熱硬化性樹脂前駆体を熱硬化させる前に、その上に第２の配線層５０を形成する。第２の配線層５０の材料及び形成方法は、第１の実施の形態で説明した第２の配線層２６の内容を適用してもよい。第２の配線層５０に対して、絶縁層４４は、上述した受理層１０と同じ機能を果たすので、絶縁層４４を受理層ということもできる。この状態で、第２の配線層５０とコンタクトポスト４２との間にも、絶縁層４４の一部が介在している。
【００２５】
図５（Ｂ）に示すように、絶縁層４４を熱硬化させ、第２の配線層５０の導電性微粒子を相互に結合させる。このとき、絶縁層４４を、熱硬化（重合）によって収縮させて、コンタクトポスト４２と第２の配線層５０の間から絶縁層４４を除去する。そして、コンタクトポスト４２と第２の配線層５０とを電気的に導通させる。こうして、積層配線基板を製造することができる。本実施の形態には、第１の実施の形態で説明した内容を適用することができる。本実施の形態でも、第１の実施の形態で説明した作用効果を得ることができる。
【００２６】
図６には、上述したいずれかの実施の形態で説明した配線基板１０００と、これに電気的に接続された半導体チップ１と、を有する半導体装置が示されている。この半導体装置を有する電子機器として、図７にはノート型パーソナルコンピュータ２０００が示され、図８には携帯電話３０００が示されている。
【００２７】
本発明は、上述した実施の形態に限定されるものではなく、種々の変形が可能である。例えば、本発明は、実施の形態で説明した構成と実質的に同一の構成（例えば、機能、方法及び結果が同一の構成、あるいは目的及び結果が同一の構成）を含む。また、本発明は、実施の形態で説明した構成の本質的でない部分を置き換えた構成を含む。また、本発明は、実施の形態で説明した構成と同一の作用効果を奏する構成又は同一の目的を達成することができる構成を含む。また、本発明は、実施の形態で説明した構成に公知技術を付加した構成を含む。
【図面の簡単な説明】
【図１】図１（Ａ）〜図１（Ｄ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。
【図２】図２（Ａ）〜図２（Ｄ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。
【図３】図３（Ａ）〜図３（Ｃ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。
【図４】図４（Ａ）〜図４（Ｃ）は、本発明の第２の実施の形態に係る配線基板の製造方法を説明する図である。
【図５】図５（Ａ）〜図５（Ｂ）は、本発明の第３の実施の形態に係る配線基板の製造方法を説明する図である。
【図６】図６は、本発明を適用した実施の形態に係る半導体装置を示す図である。
【図７】図７は、本発明を適用した実施の形態に係る半導体装置を有する電子機器を示す図である。
【図８】図８は、本発明を適用した実施の形態に係る半導体装置を有する電子機器を示す図である。
【符号の説明】
１…半導体チップ １０…受理層 １２…基材 １４…配線層 ２０…絶縁層２２…マスク層 ２４…コンタクトホール ２６…第２の配線層 ３０…第３の絶縁層 ３４…コンタクトホール ３６…コンタクトポスト ３８…端子部 ４０…配線層 ４２…コンタクトポスト ４４…絶縁層 ４６…第２の配線層 ５０…第２の配線層[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a wiring board and a method for manufacturing the same, a semiconductor device, and an electronic apparatus.
[0002]
BACKGROUND OF THE INVENTION
Conventionally, printed wiring boards have been manufactured by attaching copper foil to a base material and forming wiring by etching. According to this, the process is complicated, an expensive mask is required for etching, and many facilities are required. Therefore, in recent years, a technique has been developed in which a metal ink is discharged onto a surface-treated base material to form a wiring. As a surface treatment, when a fluorine film is formed on a substrate (FAS (Fluoric Alkyl Silane) treatment) and the surface tension of the metal ink is controlled by making it porous, the adhesion between the wiring and the substrate is enhanced. It was difficult. Alternatively, as a surface treatment, a method in which polyvinyl alcohol is applied to a substrate to form a receiving layer having swelling properties, and a method in which aluminum hydroxide is applied to a substrate to form a receiving layer having voids, a receiving layer is used. Has a high water absorbency and thus easily contains water, which is not preferable as an inner layer. Also, it has been difficult to enhance the adhesion between the wiring and the substrate.
[0003]
An object of the present invention is to easily manufacture a highly reliable wiring board.
[0004]
[Means for Solving the Problems]
(1) In the method for manufacturing a wiring board according to the present invention, a receiving layer is formed from a thermosetting resin precursor;
Forming a wiring layer on the receiving layer with a dispersion containing conductive fine particles, and
The curing reaction of the thermosetting resin precursor, heat for bonding the conductive fine particles to each other, supplying to the receiving layer and the wiring layer,
including. According to the present invention, when the dispersion containing the conductive fine particles is provided, the receiving layer is still in a state before the curing reaction, so that the occurrence of bleeding or accumulation (bulge) can be suppressed. In addition, the heat-cured receiving layer and the wiring layer containing conductive fine particles bonded to each other have high adhesion. Therefore, a highly reliable wiring board can be easily manufactured.
(2) In this method of manufacturing a wiring board,
A polyimide precursor may be used as the thermosetting resin precursor, and the polyimide precursor may be polymerized by the heat.
(3) In this method of manufacturing a wiring board,
The wiring layer may be formed by discharging the dispersion containing the conductive fine particles. (4) In this method of manufacturing a wiring board,
The receiving layer may be formed on a substrate.
(5) In this method of manufacturing a wiring board,
The method may further include removing the substrate from the receiving layer after the thermosetting resin precursor undergoes a curing reaction to bond the conductive fine particles to each other.
(6) The wiring board according to the present invention is manufactured by the above method.
(7) The semiconductor device according to the present invention includes:
A semiconductor chip electrically connected to the wiring board,
Having.
(8) An electronic apparatus according to the present invention includes the above semiconductor device.
[0005]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0006]
(First Embodiment)
FIGS. 1A to 3C are diagrams illustrating a method for manufacturing a wiring board according to the first embodiment of the present invention. In this embodiment, as shown in FIG. 1A, the receiving layer 10 is formed using a thermosetting resin precursor (for example, an organic material such as a polyimide precursor or an epoxy resin precursor). Before the thermosetting reaction, the thermosetting resin precursor may be in a liquid or paste form, and the receiving layer 10 may have viscosity. The material forming the receiving layer 10 may have photosensitivity. The receiving layer 10 may be formed by spreading the thermosetting resin precursor by spin coating, or may be formed by discharging the thermosetting resin precursor (for example, discharging the droplet). If necessary, the receiving layer 10 may be dried (for example, at 150 ° C. for 10 minutes). The receiving layer 10 may be formed so that the surface becomes flat. The receiving layer 10 has an insulating property and can be referred to as a (first) insulating layer.
[0007]
The receiving layer 10 may be formed on a base material (for example, a substrate) 12. The substrate 12 may be a metal such as copper, a resin such as polyimide or epoxy, or a glass.
[0008]
As shown in FIG. 1B, a wiring layer (hereinafter, also referred to as a first wiring layer) 14 is formed on the receiving layer 10. The wiring layer 14 is formed of a dispersion liquid containing conductive fine particles (for example, metal ink). The conductive fine particles may be formed of a material such as gold or silver which is hardly oxidized and has low electric resistance. As a dispersion containing fine gold particles, "Perfect Gold" manufactured by Vacuum Metallurgy Co., Ltd., and as a dispersion containing fine silver particles, "Perfect Silver" manufactured by the company may be used. The fine particles are not particularly limited in size, but are particles that can be discharged together with the dispersion medium. The wiring layer 14 may be formed by discharging a dispersion liquid containing conductive fine particles (for example, discharging the droplets) by an inkjet method or a bubble jet (registered trademark) method, or by mask printing or screen printing. May go. The conductive fine particles may be coated with a coating material to suppress the reaction. The dispersion medium may be one that is difficult to dry and has resolubility. The conductive fine particles may be uniformly dispersed in the dispersion medium.
[0009]
According to the present embodiment, since the dispersion liquid containing the conductive fine particles is provided on the thermosetting resin precursor, it is possible to suppress the occurrence of bleeding and accumulation (bulge) when forming the wiring layer 14. Can be. The wiring layer 14 may be dried to evaporate the dispersion medium and leave the conductive fine particles (or the conductive fine particles and the coating material). Drying may be performed at a temperature of room temperature or higher and 100 ° C. or lower. Alternatively, the wiring layer 14 may be heated at a temperature (for example, about 200 ° C.) at which the thermosetting reaction of the thermosetting resin precursor forming the receiving layer 10 does not occur. Thereby, the coating material covering the conductive fine particles may be decomposed.
[0010]
As shown in FIG. 1C, heat is supplied to the receiving layer 10 and the wiring layer 14. The heat may be a temperature (for example, about 300 to 400 ° C.) at which the thermosetting resin precursor constituting the receiving layer 10 undergoes a curing reaction (for example, polymerization). The heat may be a temperature (for example, about 300 to 600 ° C.) at which the conductive fine particles of the wiring layer 14 are mutually bonded (for example, sintered). The heat supply time may be about one hour. By doing so, the thermosetting resin precursor becomes an infusible and insoluble resin (thermosetting resin). For example, the polyimide precursor becomes a polyimide, and the epoxy resin precursor becomes an epoxy resin. The conductive fine particles become a conductive film or a conductive layer. When the thermosetting resin precursor is cured and the conductive particles are bonded to each other, the adhesion between the receiving layer 10 and the wiring layer 14 is increased, so that a highly reliable wiring substrate can be obtained.
[0011]
As illustrated in FIG. 1D, an insulating layer (also referred to as a second insulating layer) 20 may be formed so as to cover the wiring layer 14. The material and the formation method of the insulating layer 20 may correspond to the contents of the receiving layer 10. Further, the insulating layer 20 may have photosensitivity. Before providing the insulating layer 20, the dispersion medium is volatilized from at least the wiring layer 14 before that. In the present embodiment, the insulating layer 20 is formed after the conductive fine particles of the wiring layer 14 are mutually bonded (for example, sintered).
[0012]
As shown in FIG. 2A, a mask layer 22 may be formed over the insulating layer 20. The mask layer 22 is formed so as to correspond to the contact hole 24 formed in the insulating layer 20. For example, when the insulating layer 20 is formed of a material that cures in response to light (for example, ultraviolet light), the mask layer 22 is formed at the position where the contact hole 24 is formed. The mask layer 22 may be formed by discharging or printing resin.
[0013]
As shown in FIG. 2B, the insulating layer 20 is irradiated with light (for example, ultraviolet light) to cure a portion of the insulating layer 20 exposed from the mask layer 22. In this case, the hardening of the insulating layer 20 is stopped in a state where the hardening reaction (polymerization or cross-linking) is not completely completed (for example, in a viscous state). Then, by performing development, a contact hole 24 is formed in the insulating layer 20 as shown in FIG.
[0014]
Subsequently, as shown in FIG. 2D, a second wiring layer 26 is formed over the insulating layer 20. The material and the forming method of the second wiring layer 26 may correspond to the contents of the first wiring layer 14 described above. Since the insulating layer 20 has the same function as the above-described receiving layer 10 with respect to the second wiring layer 26, the insulating layer 20 can also be referred to as a receiving layer. The second wiring layer 26 is formed so as to be in contact with the first wiring layer 14 via the contact hole 24. When the second wiring layer 26 is formed of a dispersion containing conductive fine particles, this may be discharged into the contact hole 24.
[0015]
As shown in FIG. 3A, heat may be supplied to cause a hardening reaction of the material forming the insulating layer 20 to bond the conductive fine particles of the second wiring layer 26 to each other. The insulating layer 20 and the second wiring layer 26 may have the features described above for the receiving layer 10 and the first wiring layer 14, and may achieve the same effects.
[0016]
As shown in FIG. 3B, a third insulating layer 30 may be formed so as to cover the second wiring layer 26. The material and formation method of the third insulating layer 30 may correspond to the contents of the insulating layer 20. Alternatively, a contact hole 34 may be formed in the third insulating layer 30 and a contact post 36 may be formed on the second wiring layer 26.
[0017]
As shown in FIG. 3C, a terminal portion 38 may be formed on the contact post 36. The terminal portion 38 may be formed so as to be larger than the upper surface of the contact post 36. In that case, the peripheral portion of the terminal portion 38 may be placed on the third insulating layer 30. The terminal portion 38 can be formed by electroless plating of Ni, Cu, or the like.
[0018]
Further, as shown in FIG. 3C, the base material 12 may be removed from the receiving layer 10. For example, a copper plate may be used as the substrate 12, and the substrate 12 may be immersed in an etching solution such as ferric chloride to dissolve the substrate. In this step, the thermosetting resin precursor (the receiving layer 10, the second and third insulating layers 20, 30) undergoes a curing reaction, and the conductive fine particles (the first and second wiring layers 14, 26) are interconnected. This is performed after binding. By doing so, a thin film laminated wiring board is obtained.
[0019]
According to the present embodiment, the adhesion between the heat-cured receiving layer 10 and the wiring layer 14 containing mutually connected conductive fine particles is high. Therefore, a highly reliable wiring board can be easily manufactured.
[0020]
(Second embodiment)
FIGS. 4A to 4C are diagrams illustrating a method for manufacturing a wiring board according to the second embodiment of the present invention. In the present embodiment, the wiring layer 40 is formed on the receiving layer 10 described above. Further, the above-described base material 12 may be used. The contents and the formation method of the receiving layer 10 and the wiring layer 40 may be the same as those described in the first embodiment. The wiring layer 40 is formed to have the contact posts 42. Then, an insulating layer 44 is formed so as to cover the wiring layer 40. The insulating layer 44 may cover the contact posts 42. As the material and the formation method of the insulating layer 44, the contents of the insulating layer 20 described in the first embodiment may be applied. Also in the present embodiment, the insulating layer 44 is provided after the receiving layer 10 is thermally cured and the conductive fine particles of the wiring layer 40 are mutually bonded.
[0021]
As shown in FIG. 4B, at least the upper surface of the contact post 42 is exposed from the insulating layer 44. The surface portion may be removed so that the insulating layer 44 becomes thin. The surface portion of the insulating layer 44 may be dissolved.
[0022]
As shown in FIG. 4C, a second wiring layer 46 is formed over the insulating layer 44. As the material and the forming method of the second wiring layer 46, the contents of the second wiring layer 26 described in the first embodiment may be applied. Since the insulating layer 44 has the same function as the receiving layer 10 described above with respect to the second wiring layer 46, the insulating layer 44 can also be referred to as a receiving layer. The second wiring layer 26 is formed so as to pass over the contact post 42. Thereafter, the conductive fine particles of the second wiring layer 46 are bonded to each other to manufacture a multilayer wiring board. The contents described in the first embodiment can be applied to this embodiment. Also in the present embodiment, the operation and effect described in the first embodiment can be obtained.
[0023]
(Third embodiment)
FIGS. 5A and 5B are diagrams illustrating a method for manufacturing a wiring board according to the third embodiment of the present invention. In the present embodiment, as described in the second embodiment, the wiring layer 40 is formed on the receiving layer 10, and the insulating layer 44 is formed thereon. The insulating layer 44 is formed so as to cover the contact posts 42. The other details are the same as those described with reference to FIG.
[0024]
As shown in FIG. 5A, before the thermosetting resin precursor forming the insulating layer 44 is thermoset, the second wiring layer 50 is formed thereon. As the material and forming method of the second wiring layer 50, the contents of the second wiring layer 26 described in the first embodiment may be applied. Since the insulating layer 44 has the same function as the above-described receiving layer 10 with respect to the second wiring layer 50, the insulating layer 44 can also be referred to as a receiving layer. In this state, a part of the insulating layer 44 is also interposed between the second wiring layer 50 and the contact post 42.
[0025]
As shown in FIG. 5B, the insulating layer 44 is thermally cured, and the conductive fine particles of the second wiring layer 50 are mutually bonded. At this time, the insulating layer 44 is contracted by thermosetting (polymerization), and the insulating layer 44 is removed from between the contact post 42 and the second wiring layer 50. Then, the contact post 42 and the second wiring layer 50 are electrically connected. Thus, a laminated wiring board can be manufactured. The contents described in the first embodiment can be applied to this embodiment. Also in the present embodiment, the operation and effect described in the first embodiment can be obtained.
[0026]
FIG. 6 shows a semiconductor device including the wiring board 1000 described in any of the above-described embodiments and the semiconductor chip 1 electrically connected thereto. As an electronic apparatus having the semiconductor device, a notebook personal computer 2000 is shown in FIG. 7, and a mobile phone 3000 is shown in FIG.
[0027]
The present invention is not limited to the embodiments described above, and various modifications are possible. For example, the invention includes configurations substantially the same as the configurations described in the embodiments (for example, a configuration having the same function, method, and result, or a configuration having the same object and result). Further, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. Further, the invention includes a configuration having the same operation and effect as the configuration described in the embodiment, or a configuration capable of achieving the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.
[Brief description of the drawings]
FIGS. 1A to 1D are diagrams illustrating a method for manufacturing a wiring board according to a first embodiment of the present invention.
FIGS. 2A to 2D are diagrams illustrating a method for manufacturing a wiring board according to the first embodiment of the present invention.
FIGS. 3A to 3C are diagrams illustrating a method for manufacturing a wiring board according to the first embodiment of the present invention.
FIGS. 4A to 4C are diagrams illustrating a method for manufacturing a wiring board according to a second embodiment of the present invention.
FIGS. 5A and 5B are diagrams illustrating a method for manufacturing a wiring board according to a third embodiment of the present invention.
FIG. 6 is a diagram showing a semiconductor device according to an embodiment to which the present invention is applied.
FIG. 7 is a diagram illustrating an electronic apparatus including a semiconductor device according to an embodiment to which the present invention is applied;
FIG. 8 is a diagram illustrating an electronic apparatus including a semiconductor device according to an embodiment to which the present invention is applied;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip 10 ... Receiving layer 12 ... Base material 14 ... Wiring layer 20 ... Insulating layer 22 ... Mask layer 24 ... Contact hole 26 ... Second wiring layer 30 ... Third insulating layer 34 ... Contact hole 36 ... Contact post 38 terminal part 40 wiring layer 42 contact post 44 insulating layer 46 second wiring layer 50 second wiring layer

Claims (8)

熱硬化性樹脂前駆体により受理層を形成すること、
前記受理層上に、導電性微粒子を含む分散液により、配線層を形成すること、及び、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させる熱を、前記受理層及び前記配線層に供給すること、
を含む配線基板の製造方法。Forming a receiving layer with a thermosetting resin precursor,
Forming a wiring layer on the receiving layer with a dispersion containing conductive fine particles, and
The curing reaction of the thermosetting resin precursor, heat for bonding the conductive fine particles to each other, supplying to the receiving layer and the wiring layer,
A method of manufacturing a wiring board including: 請求項１記載の配線基板の製造方法において、
前記熱硬化性樹脂前駆体としてポリイミド前駆体を使用し、前記熱によって前記ポリイミド前駆体を重合させる配線基板の製造方法。The method for manufacturing a wiring board according to claim 1,
A method for producing a wiring board, wherein a polyimide precursor is used as the thermosetting resin precursor, and the polyimide precursor is polymerized by the heat. 請求項１又は請求項２記載の配線基板の製造方法において、
前記導電性微粒子を含む前記分散液を吐出して前記配線層を形成する配線基板の製造方法。The method for manufacturing a wiring board according to claim 1 or 2,
A method for manufacturing a wiring board, wherein the wiring layer is formed by discharging the dispersion containing the conductive fine particles. 請求項１から請求項３のいずれかに記載の配線基板の製造方法において、
前記受理層を基材上に形成する配線基板の製造方法。The method for manufacturing a wiring board according to claim 1, wherein
A method for manufacturing a wiring board, wherein the receiving layer is formed on a substrate. 請求項４記載の配線基板の製造方法において、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させた後に、前記基材を前記受理層から除去することをさらに含む配線基板の製造方法。The method for manufacturing a wiring board according to claim 4,
A method for manufacturing a wiring board, further comprising removing the base material from the receiving layer after the thermosetting resin precursor undergoes a curing reaction to bond the conductive fine particles to each other. 請求項１から請求項５のいずれかに記載の方法により製造されてなる配線基板。A wiring board manufactured by the method according to claim 1. 請求項６記載の配線基板と、
前記配線基板と電気的に接続された半導体チップと、
を有する半導体装置。A wiring board according to claim 6,
A semiconductor chip electrically connected to the wiring board,
A semiconductor device having: 請求項７記載の半導体装置を有する電子機器。An electronic apparatus comprising the semiconductor device according to claim 7.
JP2003055641A 2003-03-03 2003-03-03 Wiring board manufacturing method Expired - Fee Related JP3781118B2 (en)

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US10/792,266 US7189598B2 (en) 2003-03-03 2004-03-02 Wiring board, method of manufacturing the same, semiconductor device, and electronic instrument

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