JP2004265945A - 半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法 - Google Patents

半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法 Download PDF

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Publication number
JP2004265945A
JP2004265945A JP2003044716A JP2003044716A JP2004265945A JP 2004265945 A JP2004265945 A JP 2004265945A JP 2003044716 A JP2003044716 A JP 2003044716A JP 2003044716 A JP2003044716 A JP 2003044716A JP 2004265945 A JP2004265945 A JP 2004265945A
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Japan
Prior art keywords
semiconductor epitaxial
crystal wafer
wafer
epitaxial crystal
quality
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Pending
Application number
JP2003044716A
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English (en)
Japanese (ja)
Inventor
Masaaki Nakayama
正昭 中山
Tomoyuki Takada
朋幸 高田
Taketsugu Yamamoto
武継 山本
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP2003044716A priority Critical patent/JP2004265945A/ja
Priority to US10/546,289 priority patent/US20060234400A1/en
Priority to PCT/JP2004/001895 priority patent/WO2004075284A1/ja
Priority to TW093104334A priority patent/TW200416934A/zh
Publication of JP2004265945A publication Critical patent/JP2004265945A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2003044716A 2003-02-21 2003-02-21 半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法 Pending JP2004265945A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003044716A JP2004265945A (ja) 2003-02-21 2003-02-21 半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法
US10/546,289 US20060234400A1 (en) 2003-02-21 2004-02-19 Method of judging quality of semiconductor epitaxial crystal wafer and wafer manufacturing method using the same
PCT/JP2004/001895 WO2004075284A1 (ja) 2003-02-21 2004-02-19 半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法
TW093104334A TW200416934A (en) 2003-02-21 2004-02-20 Quality determination method for semiconductor epitaxy wafer, and wafer manufacturing method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003044716A JP2004265945A (ja) 2003-02-21 2003-02-21 半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法

Publications (1)

Publication Number Publication Date
JP2004265945A true JP2004265945A (ja) 2004-09-24

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ID=32905464

Family Applications (1)

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JP2003044716A Pending JP2004265945A (ja) 2003-02-21 2003-02-21 半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法

Country Status (4)

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US (1) US20060234400A1 (enExample)
JP (1) JP2004265945A (enExample)
TW (1) TW200416934A (enExample)
WO (1) WO2004075284A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011101049A (ja) * 2011-02-07 2011-05-19 Mitsubishi Electric Corp 半導体層の検査方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118800674A (zh) * 2019-07-10 2024-10-18 科磊股份有限公司 数据驱动的错位参数配置与测量的系统及方法
CN113031669B (zh) * 2021-02-10 2022-04-22 国机集团科学技术研究院有限公司 一种高品质晶体培植类关键工艺环境振动控制技术分析方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214610B1 (en) * 1985-09-03 1990-12-05 Daido Tokushuko Kabushiki Kaisha Epitaxial gallium arsenide semiconductor wafer and method of producing the same
JPH0787212B2 (ja) * 1988-01-08 1995-09-20 日本電信電話株式会社 ビーム変調分光装置
US4953983A (en) * 1988-03-25 1990-09-04 Nicholas Bottka Non-destructively measuring local carrier concentration and gap energy in a semiconductor
JP2970818B2 (ja) * 1990-12-10 1999-11-02 日本電信電話株式会社 ビーム変調分光装置およびその測定方法
US5365334A (en) * 1990-12-21 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Micro photoreflectance semiconductor wafer analyzer
US5379109A (en) * 1992-06-17 1995-01-03 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for non-destructively measuring local resistivity of semiconductors
US6195166B1 (en) * 1998-05-08 2001-02-27 Lucent Technologies, Inc. Photoreflectance spectral analysis of semiconductor laser structures
JP2000012635A (ja) * 1998-06-25 2000-01-14 Furukawa Electric Co Ltd:The 半導体エピタキシャルウエハの非破壊評価方法
JP3646218B2 (ja) * 2000-07-13 2005-05-11 日本電信電話株式会社 半導体結晶測定法
US7122734B2 (en) * 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011101049A (ja) * 2011-02-07 2011-05-19 Mitsubishi Electric Corp 半導体層の検査方法

Also Published As

Publication number Publication date
US20060234400A1 (en) 2006-10-19
TWI362080B (enExample) 2012-04-11
WO2004075284A1 (ja) 2004-09-02
TW200416934A (en) 2004-09-01

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