JP2004253802A - 改善された温度特性を有するＧａＡｓＳｂ／ＧａＡｓ素子 - Google Patents

改善された温度特性を有するＧａＡｓＳｂ／ＧａＡｓ素子 Download PDF

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JP2004253802A
JP2004253802A JP2004041197A JP2004041197A JP2004253802A JP 2004253802 A JP2004253802 A JP 2004253802A JP 2004041197 A JP2004041197 A JP 2004041197A JP 2004041197 A JP2004041197 A JP 2004041197A JP 2004253802 A JP2004253802 A JP 2004253802A
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Prior art keywords
layer
quantum well
confinement
gaas
well layer
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Japanese (ja)
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JP2004253802A5 (OSRAM
Inventor
David P Bour
デイビッド・ピー・ボア
Michael R T Tan
マイケル・アール・ティー・タン
Ying-Lan Chang
イン−ラン・チャン
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Agilent Technologies Inc
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Agilent Technologies Inc
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Publication of JP2004253802A publication Critical patent/JP2004253802A/ja
Publication of JP2004253802A5 publication Critical patent/JP2004253802A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2004041197A 2003-02-18 2004-02-18 改善された温度特性を有するＧａＡｓＳｂ／ＧａＡｓ素子 Withdrawn JP2004253802A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/368,274 US6931044B2 (en) 2003-02-18 2003-02-18 Method and apparatus for improving temperature performance for GaAsSb/GaAs devices

Publications (2)

Publication Number Publication Date
JP2004253802A true JP2004253802A (ja) 2004-09-09
JP2004253802A5 JP2004253802A5 (OSRAM) 2007-04-05

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JP2004041197A Withdrawn JP2004253802A (ja) 2003-02-18 2004-02-18 改善された温度特性を有するＧａＡｓＳｂ／ＧａＡｓ素子

Country Status (2)

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US (1) US6931044B2 (OSRAM)
JP (1) JP2004253802A (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
US6931044B2 (en) * 2003-02-18 2005-08-16 Agilent Technologies, Inc. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
KR20050073740A (ko) * 2004-01-10 2005-07-18 삼성전자주식회사 이중 장벽층을 구비하는 양자우물 구조체를 포함하는반도체 소자 및 이를 채용한 반도체 레이저 및 그 제조 방법
US7781777B2 (en) * 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
JP2008515201A (ja) * 2004-09-23 2008-05-08 セミネックス・コーポレーション 高エネルギー赤外半導体ダイオード発光デバイス
US9024292B2 (en) * 2012-06-02 2015-05-05 Xiaohang Li Monolithic semiconductor light emitting devices and methods of making the same
WO2016195695A1 (en) * 2015-06-04 2016-12-08 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsels with spatially varying gain peak and fabry perot wavelength
US10971652B2 (en) * 2017-01-26 2021-04-06 Epistar Corporation Semiconductor device comprising electron blocking layers
TWI742714B (zh) * 2019-06-11 2021-10-11 全新光電科技股份有限公司 半導體雷射二極體
TWI818268B (zh) * 2019-06-11 2023-10-11 全新光電科技股份有限公司 具有載子再利用機制的垂直共振腔表面放射雷射二極體
CN114400506B (zh) * 2022-01-17 2024-01-12 光为科技(广州)有限公司 半导体激光器及其制备方法

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
IT1180125B (it) * 1984-11-13 1987-09-23 Cselt Centro Studi Lab Telecom Perfezionamenti ai laser a semiconduttore
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
US5218613A (en) * 1992-05-01 1993-06-08 Mcdonnell Douglas Corporation Visible diode laser
JP3589301B2 (ja) * 1994-03-25 2004-11-17 フラウンホッファー ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ． 量子層の構造
JP2991616B2 (ja) * 1994-06-30 1999-12-20 シャープ株式会社 半導体発光素子
US5825796A (en) * 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
GB2344932A (en) * 1998-12-15 2000-06-21 Sharp Kk Semiconductor Laser with gamma and X electron barriers
US7058112B2 (en) * 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US6434180B1 (en) * 2000-12-19 2002-08-13 Lucent Technologies Inc. Vertical cavity surface emitting laser (VCSEL)
US6711195B2 (en) * 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US6801558B2 (en) * 2002-06-14 2004-10-05 Agilent Technologies, Inc. Material systems for long wavelength lasers grown on InP substrates
US6791104B2 (en) * 2002-09-26 2004-09-14 Wisconsin Alumni Research Foundation Type II quantum well optoelectronic devices
US6931044B2 (en) * 2003-02-18 2005-08-16 Agilent Technologies, Inc. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices

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Publication number Publication date
US6931044B2 (en) 2005-08-16
US20040161005A1 (en) 2004-08-19

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