JP2004214635A5 - - Google Patents
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- JP2004214635A5 JP2004214635A5 JP2003411870A JP2003411870A JP2004214635A5 JP 2004214635 A5 JP2004214635 A5 JP 2004214635A5 JP 2003411870 A JP2003411870 A JP 2003411870A JP 2003411870 A JP2003411870 A JP 2003411870A JP 2004214635 A5 JP2004214635 A5 JP 2004214635A5
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パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いて半導体素子を形成し、
前記半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、
前記金属酸化膜の一部が付着した前記絶縁膜に第２の接着剤を用いてインターポーザを貼り合わせ、
前記第１の接着剤を除去することで前記第２の基板を取り除くことを特徴とする半導体装置の作製方法。 And the metal film on the first base plate, and a metal oxide film, an insulating film, is formed so as to laminate the semiconductor film in order,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
Forming a semiconductor element using the crystallized semiconductor film;
The second substrate is bonded using a first adhesive so as to face the first substrate with the semiconductor element interposed therebetween ,
By separating the pre Symbol metal oxide film and the insulating film side and the metal film side, removing said first base plate,
An interposer is bonded to the insulating film to which a part of the metal oxide film is adhered using a second adhesive,
The method for manufacturing a semiconductor device comprising a dividing wolfberry take the second substrate by removing the first adhesive.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、The semiconductor film is crystallized by irradiating the semiconductor film with the pulsed first laser light and the continuously oscillated second laser light so that their irradiation regions overlap.
前記結晶化された半導体膜を用いて半導体素子を形成し、Forming a semiconductor element using the crystallized semiconductor film;
前記半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、The second substrate is bonded using a first adhesive so as to face the first substrate with the semiconductor element interposed therebetween,
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、By separating the metal oxide film into the metal film side and the insulating film side, the first substrate is removed,
前記金属酸化膜の一部が付着した前記絶縁膜に第２の接着剤を用いて端子が設けられたインターポーザを貼り合わせ、Attaching an interposer provided with terminals using a second adhesive to the insulating film to which a part of the metal oxide film is attached,
前記第１の接着剤を除去することで前記第２の基板を取り除いた後、After removing the second substrate by removing the first adhesive,
前記インターポーザに設けられた前記端子と前記半導体素子とを電気的に接続することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the terminal provided in the interposer and the semiconductor element are electrically connected.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いて半導体素子を形成し、
前記半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、
前記金属酸化膜の一部が付着した前記絶縁膜に第２の接着剤を用いて端子が設けられたインターポーザを貼り合わせることで、前記インターポーザに設けられた前記端子と前記半導体素子とを電気的に接続し、
前記第１の接着剤を除去することで前記第２の基板を取り除くことを特徴とする半導体装置の作製方法。 And the metal film on the first base plate, and a metal oxide film, an insulating film, is formed so as to laminate the semiconductor film in order,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
Forming a semiconductor element using the crystallized semiconductor film;
The second substrate is bonded using a first adhesive so as to face the first substrate with the semiconductor element interposed therebetween ,
By separating the pre Symbol metal oxide film and the insulating film side and the metal film side, removing said first base plate,
By bonding an interposer provided with a terminal using a second adhesive to the insulating film to which a part of the metal oxide film is attached, the terminal provided in the interposer and the semiconductor element are electrically connected. Connected to
A method for manufacturing a semiconductor device, wherein the second substrate is removed by removing the first adhesive.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いて半導体素子を形成し、
前記半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、
前記絶縁膜に部分的に付着した前記金属酸化膜を除去し、
前記絶縁膜に第２の接着剤を用いて端子が設けられたインターポーザを貼り合わせ、
前記第１の接着剤を除去することで前記第２の基板を取り除いた後、
前記インターポーザに設けられた前記端子と前記半導体素子とを電気的に接続することを特徴とする半導体装置の作製方法。 And the metal film on the first base plate, and a metal oxide film, an insulating film, is formed so as to laminate the semiconductor film in order,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
Forming a semiconductor element using the crystallized semiconductor film;
The second substrate is bonded using a first adhesive so as to face the first substrate with the semiconductor element interposed therebetween ,
By separating the pre Symbol metal oxide film and the insulating film side and the metal film side, removing said first base plate,
Removing the metal oxide film partially adhered to the insulating film;
Bonding an interposer provided with terminals using a second adhesive to the insulating film,
After had dividing takes the second substrate by removing the first adhesive,
A method for manufacturing a semiconductor device, wherein the terminal provided in the interposer and the semiconductor element are electrically connected.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いて半導体素子を形成し、
前記半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記第１の基板の裏側に第２の接着剤を用いて第３の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板及び前記第３の基板を取り除き、
前記金属酸化膜の一部が付着した前記絶縁膜に第３の接着剤を用いて端子が設けられたインターポーザを貼り合わせ、
前記第１の接着剤を除去することで前記第２の基板を取り除いた後、
前記インターポーザに設けられた前記端子と前記半導体素子とを電気的に接続することを特徴とする半導体装置の作製方法。 A metal film, a metal oxide film, an insulating film, and a semiconductor film are sequentially stacked on the front side of the first substrate ,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
Forming a semiconductor element using the crystallized semiconductor film;
The second substrate is bonded using a first adhesive so as to face the first substrate with the semiconductor element interposed therebetween,
A third substrate is bonded to the back side of the first substrate using a second adhesive ,
Before Symbol metal oxide film by causing separated into the insulating film side and the metal film side, removing the first substrate and the third substrate,
Bonding an interposer provided with terminals using a third adhesive to the insulating film to which a part of the metal oxide film is attached,
After had dividing takes the second substrate by removing the first adhesive,
A method for manufacturing a semiconductor device, wherein the terminal provided in the interposer and the semiconductor element are electrically connected.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いた半導体素子と、前記半導体素子に電気的に接続されたパッドとを形成し、
前記半導体素子及び前記パッドを間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、
前記金属酸化膜の一部が付着した前記絶縁膜に第２の接着剤を用いて端子が設けられたインターポーザを貼り合わせ、
前記第１の接着剤を除去することで前記第２の基板を取り除いた後、
前記インターポーザに設けられた前記端子と前記パッドとを電気的に接続することを特徴とする半導体装置の作製方法。 And the metal film on the first base plate, and a metal oxide film, an insulating film, is formed so as to laminate the semiconductor film in order,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
Forming a semiconductor element using the crystallized semiconductor film and a pad electrically connected to the semiconductor element;
A second substrate is bonded using a first adhesive so as to face the first substrate with the semiconductor element and the pad interposed therebetween ,
By separating the pre Symbol metal oxide film and the insulating film side and the metal film side, removing said first base plate,
Attaching an interposer provided with terminals using a second adhesive to the insulating film to which a part of the metal oxide film is attached,
After had dividing takes the second substrate by removing the first adhesive,
Preparation how a semiconductor device, characterized by electrically connecting the said terminals provided on the interposer pads.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、The semiconductor film is crystallized by irradiating the semiconductor film with the pulsed first laser light and the continuously oscillated second laser light so that their irradiation regions overlap.
前記結晶化された半導体膜を用いた半導体素子と、前記半導体素子に電気的に接続されたパッドとを形成し、Forming a semiconductor element using the crystallized semiconductor film and a pad electrically connected to the semiconductor element;
前記半導体素子及び前記パッドを間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、A second substrate is bonded using a first adhesive so as to face the first substrate with the semiconductor element and the pad interposed therebetween,
前記第１の基板の裏側に第２の接着剤を用いて第３の基板を貼り合わせ、A third substrate is bonded to the back side of the first substrate using a second adhesive,
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板及び前記第３の基板を取り除き、By separating the metal oxide film into the metal film side and the insulating film side, the first substrate and the third substrate are removed,
前記金属酸化膜の一部が付着した前記絶縁膜に第３の接着剤を用いて端子が設けられたインターポーザを貼り合わせ、Bonding an interposer provided with terminals using a third adhesive to the insulating film to which a part of the metal oxide film is attached,
前記第１の接着剤を除去することで前記第２の基板を取り除いた後、After removing the second substrate by removing the first adhesive,
前記インターポーザに設けられた前記端子と前記パッドとを電気的に接続することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the terminal provided in the interposer and the pad are electrically connected.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いて複数の半導体素子を形成し、
前記複数の半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、
前記第２の基板を切断することにより、前記複数の半導体素子を各々の半導体素子に分割し、
分割された半導体素子の各々において、前記金属酸化膜の一部が付着した前記絶縁膜に第２の接着剤を用いてインターポーザを貼り合わせ、
前記第１の接着剤を除去することで前記分割された半導体素子の各々の前記第２の基板を取り除くことを特徴とする半導体装置の作製方法。 And the metal film on the first base plate, and a metal oxide film, an insulating film, is formed so as to laminate the semiconductor film in order,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
A plurality of semiconductor elements are formed using the crystallized semiconductor film,
A second substrate is bonded using a first adhesive so as to face the first substrate with the plurality of semiconductor elements interposed therebetween ,
By separating the pre Symbol metal oxide film and the insulating film side and the metal film side, removing said first base plate,
By cutting the second substrate, dividing the previous SL plurality of semiconductor elements in each of the semiconductor elements,
In each of the divided semiconductor elements, an interposer is bonded to the insulating film to which a part of the metal oxide film is attached using a second adhesive,
The method for manufacturing a semiconductor device characterized by removing the second base plate of each of the divided semiconductor elements by removing the first adhesive.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、The semiconductor film is crystallized by irradiating the semiconductor film with the pulsed first laser light and the continuously oscillated second laser light so that their irradiation regions overlap.
前記結晶化された半導体膜を用いて複数の半導体素子を形成し、A plurality of semiconductor elements are formed using the crystallized semiconductor film,
前記複数の半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、A second substrate is bonded using a first adhesive so as to face the first substrate with the plurality of semiconductor elements interposed therebetween,
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、By separating the metal oxide film into the metal film side and the insulating film side, the first substrate is removed,
前記第２の基板を切断することにより、前記複数の半導体素子を各々の半導体素子に分割し、By cutting the second substrate, the plurality of semiconductor elements are divided into respective semiconductor elements,
分割された半導体素子の各々において、前記金属酸化膜の一部が付着した前記絶縁膜に第２の接着剤を用いて端子が設けられたインターポーザを貼り合わせることで、前記インターポーザと前記分割された半導体素子の各々とを電気的に接続し、In each of the divided semiconductor elements, the interposer provided with a terminal using a second adhesive is bonded to the insulating film to which a part of the metal oxide film is attached, thereby separating the interposer and the divided semiconductor element. Electrically connecting each of the semiconductor elements;
前記第１の接着剤を除去することで前記分割された半導体素子の各々の前記第２の基板を取り除くことを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the second substrate of each of the divided semiconductor elements is removed by removing the first adhesive.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いて複数の半導体素子を形成し、
前記複数の半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、
前記金属酸化膜の一部が付着した前記絶縁膜に第３の接着剤を用いてインターポーザを貼り合わせ、
前記第２の基板と前記インターポーザを切断することにより、前記複数の半導体素子を各々の半導体素子に分割し、
前記第１の接着剤を除去することで分割された半導体素子の各々の前記第２の基板を取り除くことを特徴とする半導体装置の作製方法。 And the metal film on the first base plate, and a metal oxide film, an insulating film, is formed so as to laminate the semiconductor film in order,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
A plurality of semiconductor elements are formed using the crystallized semiconductor film,
A second substrate is bonded using a first adhesive so as to face the first substrate with the plurality of semiconductor elements interposed therebetween ,
By separating the pre Symbol metal oxide film and the insulating film side and the metal film side, removing said first base plate,
An interposer is bonded to the insulating film to which a part of the metal oxide film is attached using a third adhesive,
By cutting the interposer and the second substrate, dividing the previous SL plurality of semiconductor elements in each of the semiconductor elements,
The method for manufacturing a semiconductor device characterized by removing the second base plate of each of the semiconductor elements which are divided by removing the first adhesive.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、The semiconductor film is crystallized by irradiating the semiconductor film with the pulsed first laser light and the continuously oscillated second laser light so that their irradiation regions overlap.
前記結晶化された半導体膜を用いて複数の半導体素子を形成し、A plurality of semiconductor elements are formed using the crystallized semiconductor film,
前記複数の半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、A second substrate is bonded using a first adhesive so as to face the first substrate with the plurality of semiconductor elements interposed therebetween,
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、By separating the metal oxide film into the metal film side and the insulating film side, the first substrate is removed,
前記金属酸化膜の一部が付着した前記絶縁膜に第３の接着剤を用いて端子が設けられたインターポーザを貼り合わせることで、前記インターポーザに設けられた前記端子と前記複数の半導体素子とを電気的に接続し、By bonding an interposer provided with a terminal using a third adhesive to the insulating film to which a part of the metal oxide film is adhered, the terminal provided in the interposer and the plurality of semiconductor elements are combined. Electrically connected,
前記第２の基板と前記インターポーザを切断することにより、前記複数の半導体素子を各々の半導体素子に分割し、By cutting the second substrate and the interposer, the plurality of semiconductor elements are divided into respective semiconductor elements,
前記第１の接着剤を除去することで分割された半導体素子の各々の前記第２の基板を取り除くことを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the second substrate of each of the semiconductor elements divided by removing the first adhesive is removed.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、
前記結晶化された半導体膜を用いて複数の半導体素子を形成し、
前記複数の半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、
前記金属酸化膜の一部が付着した前記絶縁膜に第３の接着剤を用いてインターポーザを貼り合わせ、
前記第１の接着剤を除去することで前記第２の基板を取り除いた後、
前記インターポーザを切断することにより、前記複数の半導体素子を各々の半導体素子に分割することを特徴とする半導体装置の作製方法。 And the metal film on the first base plate, and a metal oxide film, an insulating film, is formed so as to laminate the semiconductor film in order,
First laser light pulse oscillation, and a second laser beam continuous oscillation and irradiating the semiconductor film so as to overlap the irradiation region with each other, the semiconductor film is crystallized,
A plurality of semiconductor elements are formed using the crystallized semiconductor film,
A second substrate is bonded using a first adhesive so as to face the first substrate with the plurality of semiconductor elements interposed therebetween ,
By separating the pre Symbol metal oxide film and the insulating film side and the metal film side, removing said first base plate,
An interposer is bonded to the insulating film to which a part of the metal oxide film is attached using a third adhesive,
After had dividing takes the second substrate by removing the first adhesive,
The method for manufacturing a semiconductor device characterized by dividing by cutting the interposer, the previous SL plurality of semiconductor elements in each of the semiconductor elements.
パルス発振された第１のレーザ光と、連続発振された第２のレーザ光とを、互いの照射領域が重なるように前記半導体膜に照射することで、前記半導体膜を結晶化し、The semiconductor film is crystallized by irradiating the semiconductor film with the pulsed first laser light and the continuously oscillated second laser light so that their irradiation regions overlap.
前記結晶化された半導体膜を用いて複数の半導体素子を形成し、A plurality of semiconductor elements are formed using the crystallized semiconductor film,
前記複数の半導体素子を間に挟んで前記第１の基板と向かい合うように、第１の接着剤を用いて第２の基板を貼り合わせ、A second substrate is bonded using a first adhesive so as to face the first substrate with the plurality of semiconductor elements interposed therebetween,
前記金属酸化膜を前記金属膜側と前記絶縁膜側とに分離させることで、前記第１の基板を取り除き、By separating the metal oxide film into the metal film side and the insulating film side, the first substrate is removed,
前記金属酸化膜の一部が付着した前記絶縁膜に第３の接着剤を用いて端子が設けられたインターポーザを貼り合わせることで、前記インターポーザに設けられた前記端子と前記複数の半導体素子とを電気的に接続し、By bonding an interposer provided with a terminal using a third adhesive to the insulating film to which a part of the metal oxide film is adhered, the terminal provided in the interposer and the plurality of semiconductor elements are combined. Electrically connected,
前記第１の接着剤を除去することで前記第２の基板を取り除いた後、After removing the second substrate by removing the first adhesive,
前記インターポーザを切断することにより、前記複数の半導体素子を各々の半導体素子に分割することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the semiconductor element is divided into semiconductor elements by cutting the interposer.
前記半導体素子を形成する際の加熱処理により、前記金属酸化膜は結晶化されていることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 13,
Wherein the heat treatment in forming the semiconductor device, the metal oxide film is a method for manufacturing a semiconductor device characterized by being crystallized.
前記金属酸化膜は、前記金属膜の表面を酸化することで形成されていることを特徴とする半導体装置の作製方法。 In any one of claims 1 to 14,
The method for manufacturing a semiconductor device, wherein the metal oxide film is formed by oxidizing a surface of the metal film.
前記第１のレーザ光は、前記半導体膜に対する吸収係数が１×１０The first laser beam has an absorption coefficient of 1 × 10 4 for the semiconductor film. ４4 ｃｍcm −１-1 以上の波長を有することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, which has the above wavelength.
前記第１のレーザ光は第２高調波を有することを特徴とする半導体装置の作製方法。 In any one of claims 1 to 1 6,
The method for manufacturing a semiconductor device, wherein the first laser beam has a second harmonic.
前記第２のレーザ光は基本波を有することを特徴とする半導体装置の作製方法。 In any one of claims 1 to 1 7,
The method for manufacturing a semiconductor device, wherein the second laser beam has a fundamental wave.
前記結晶化において、前記半導体膜に対して前記第１のレーザ光の照射領域及び前記第２のレーザ光の照射領域を相対的に移動させており、前記半導体素子は、前記移動の向きに対して垂直の方向における前記第２のレーザ光の照射領域の幅に収まる領域に形成されていることを特徴とする半導体装置の作製方法。 In any one of claims 1 to 1 8,
In the crystallization, the irradiation region of the first laser beam and the irradiation region of the second laser beam are moved relative to the semiconductor film, and the semiconductor element is moved in the direction of the movement. A method for manufacturing a semiconductor device, wherein the semiconductor device is formed in a region that fits in a width of the irradiation region of the second laser beam in a vertical direction.
前記第１のレーザの照射領域と、前記第２のレーザの照射領域とが重なる領域の面積は、前記第２のレーザの照射領域に相当することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein an area of a region where the first laser irradiation region and the second laser irradiation region overlap corresponds to the second laser irradiation region.
24. The electronic device according to claim 22 , wherein the semiconductor device is used.
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| JP4481040B2 (en) * | 2003-03-07 | 2010-06-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| US7864115B2 (en) | 2005-04-27 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip |
| JP5089033B2 (en) * | 2005-11-04 | 2012-12-05 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| WO2018055838A1 (en) * | 2016-09-23 | 2018-03-29 | 株式会社テンシックス | Semiconductor element manufacturing method and semiconductor substrate |
| WO2023095188A1 (en) * | 2021-11-24 | 2023-06-01 | Ｊｓｗアクティナシステム株式会社 | Laser irradiation device, laser irradiation method, and method for manufacturing semiconductor device |
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