JP2004214479A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP2004214479A JP2004214479A JP2003000911A JP2003000911A JP2004214479A JP 2004214479 A JP2004214479 A JP 2004214479A JP 2003000911 A JP2003000911 A JP 2003000911A JP 2003000911 A JP2003000911 A JP 2003000911A JP 2004214479 A JP2004214479 A JP 2004214479A
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- Prior art keywords
- metal
- dummy gate
- gate electrode
- semiconductor device
- diffusion
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003000911A JP2004214479A (ja) | 2003-01-07 | 2003-01-07 | 半導体装置の製造方法および半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003000911A JP2004214479A (ja) | 2003-01-07 | 2003-01-07 | 半導体装置の製造方法および半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004214479A true JP2004214479A (ja) | 2004-07-29 |
| JP2004214479A5 JP2004214479A5 (enExample) | 2006-02-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003000911A Pending JP2004214479A (ja) | 2003-01-07 | 2003-01-07 | 半導体装置の製造方法および半導体装置 |
Country Status (1)
| Country | Link |
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| JP (1) | JP2004214479A (enExample) |
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2003
- 2003-01-07 JP JP2003000911A patent/JP2004214479A/ja active Pending
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