JP2004200711A5 - - Google Patents
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- JP2004200711A5 JP2004200711A5 JP2004044960A JP2004044960A JP2004200711A5 JP 2004200711 A5 JP2004200711 A5 JP 2004200711A5 JP 2004044960 A JP2004044960 A JP 2004044960A JP 2004044960 A JP2004044960 A JP 2004044960A JP 2004200711 A5 JP2004200711 A5 JP 2004200711A5
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- Prior art keywords
- compound semiconductor
- semiconductor layer
- layer
- binary compound
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (4)
チャネル層を構成する第１の二元化合物半導体層と、
バリア層を構成し、ＡｌおよびＧａの組成比が一定であるＡｌＧａＮから成る三元混晶半導体層と、
前記第１の二元化合物半導体層と前記三元混晶半導体層との間に介在される第２の二元化合物半導体層とを含み、
前記第２の二元化合物半導体層は、ＡｌＮから成り、層厚が１分子層以上４分子層以下であることを特徴とする窒化物系ＩＩＩ−Ｖ族化合物半導体装置。 In a nitride III-V compound semiconductor device having a heterostructure,
A first binary compound semiconductor layer constituting a channel layer ;
A ternary mixed crystal semiconductor layer made of AlGaN that constitutes a barrier layer and has a constant composition ratio of Al and Ga ;
A second binary compound semiconductor layer interposed between the first binary compound semiconductor layer and the ternary mixed crystal semiconductor layer ;
The nitride-based III-V group compound semiconductor device, wherein the second binary compound semiconductor layer is made of AlN and has a layer thickness of 1 to 4 molecular layers .
エピタキシャルバッファ層とを含み、
前記エピタキシャルバッファ層と、前記第１の二元化合物半導体層、前記三元混晶半導体層および前記第２の二元化合物半導体層とは、前記基板に順次積層されることを特徴とする請求項１記載の窒化物系ＩＩＩ−Ｖ族化合物半導体装置。 A substrate,
An epitaxial buffer layer,
It said epitaxial buffer layer, said first binary compound semiconductor layer, and the ternary mixed crystal semiconductor layer and said second binary compound semiconductor layer, claims, characterized in Rukoto are sequentially stacked on the substrate 2. The nitride III-V compound semiconductor device according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004044960A JP4072858B2 (en) | 2004-02-20 | 2004-02-20 | Nitride III-V compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004044960A JP4072858B2 (en) | 2004-02-20 | 2004-02-20 | Nitride III-V compound semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000266117A Division JP3708810B2 (en) | 2000-09-01 | 2000-09-01 | Nitride III-V compound semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004200711A JP2004200711A (en) | 2004-07-15 |
| JP2004200711A5 true JP2004200711A5 (en) | 2006-04-06 |
| JP4072858B2 JP4072858B2 (en) | 2008-04-09 |
Family
ID=32768213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004044960A Expired - Fee Related JP4072858B2 (en) | 2004-02-20 | 2004-02-20 | Nitride III-V compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4072858B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012119429A (en) * | 2010-11-30 | 2012-06-21 | Sanken Electric Co Ltd | Method of manufacturing semiconductor device, and semiconductor device |
| JP6133191B2 (en) | 2013-10-18 | 2017-05-24 | 古河電気工業株式会社 | Nitride semiconductor device, diode, and field effect transistor |
| CN107195773B (en) * | 2017-06-26 | 2023-07-18 | 中国科学技术大学 | Hole type semiconductor heterojunction Hall rod, preparation method and use method thereof and application thereof |
| US10559679B2 (en) | 2017-09-06 | 2020-02-11 | Coorstek Kk | Nitride semiconductor epitaxial substrate |
| CN109166929A (en) * | 2018-08-28 | 2019-01-08 | 西安电子科技大学 | A kind of GaN base Schottky barrier diode with p-type GaN cap |
-
2004
- 2004-02-20 JP JP2004044960A patent/JP4072858B2/en not_active Expired - Fee Related
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