JP2004179651A - 光検出器及び入射光の検出方法 - Google Patents

光検出器及び入射光の検出方法 Download PDF

Info

Publication number
JP2004179651A
JP2004179651A JP2003384499A JP2003384499A JP2004179651A JP 2004179651 A JP2004179651 A JP 2004179651A JP 2003384499 A JP2003384499 A JP 2003384499A JP 2003384499 A JP2003384499 A JP 2003384499A JP 2004179651 A JP2004179651 A JP 2004179651A
Authority
JP
Japan
Prior art keywords
phototransistor
incident light
sige
photodetector
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003384499A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004179651A5 (enExample
Inventor
Graham Mcrae Flower
マクレイ フラワー グラハム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2004179651A publication Critical patent/JP2004179651A/ja
Publication of JP2004179651A5 publication Critical patent/JP2004179651A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
    • G01J1/1626—Arrangements with two photodetectors, the signals of which are compared
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
JP2003384499A 2002-11-25 2003-11-14 光検出器及び入射光の検出方法 Withdrawn JP2004179651A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/303,506 US6919552B2 (en) 2002-11-25 2002-11-25 Optical detector and method for detecting incident light

Publications (2)

Publication Number Publication Date
JP2004179651A true JP2004179651A (ja) 2004-06-24
JP2004179651A5 JP2004179651A5 (enExample) 2006-12-21

Family

ID=32325019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003384499A Withdrawn JP2004179651A (ja) 2002-11-25 2003-11-14 光検出器及び入射光の検出方法

Country Status (3)

Country Link
US (1) US6919552B2 (enExample)
JP (1) JP2004179651A (enExample)
CN (1) CN1503378B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009087961A (ja) * 2007-09-27 2009-04-23 Casio Comput Co Ltd 光検出器
JP2009212278A (ja) * 2008-03-04 2009-09-17 Sony Corp 光検出回路
JP2011227863A (ja) * 2010-03-31 2011-11-10 Casio Comput Co Ltd 光センサ装置及び光センサ装置の駆動方法
US8368677B2 (en) 2010-03-31 2013-02-05 Casio Computer Co., Ltd. Optical sensor device, display apparatus, and method for driving optical sensor device
TWI479389B (zh) * 2010-03-31 2015-04-01 Casio Computer Co Ltd 光感測裝置、顯示裝置及光感測裝置之驅動方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
JP4300577B2 (ja) * 2004-03-04 2009-07-22 横河電機株式会社 光電変換装置およびこれを用いた光電変換システム
US20060157806A1 (en) * 2005-01-18 2006-07-20 Omnivision Technologies, Inc. Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response
CN100494883C (zh) * 2006-11-09 2009-06-03 中国科学院半导体研究所 一种测量小光斑尺寸的方法
CN103023331B (zh) * 2011-09-28 2015-09-30 中国科学院微电子研究所 高压开关电源的隔离式电压电流检测控制电路
CN106197662B (zh) * 2016-08-22 2017-12-01 成都三零嘉微电子有限公司 一种光电检测电路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1264513C2 (de) * 1963-11-29 1973-01-25 Texas Instruments Inc Bezugspotentialfreier gleichstromdifferenzverstaerker
US4916307A (en) * 1987-12-15 1990-04-10 Fuji Electric Co., Ltd. Light intensity detecting circuit with dark current compensation
JP2701754B2 (ja) * 1994-10-03 1998-01-21 日本電気株式会社 シリコン受光素子の製造方法
JPH10290023A (ja) * 1997-04-15 1998-10-27 Nec Corp 半導体光検出器
JP4312851B2 (ja) * 1998-04-27 2009-08-12 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009087961A (ja) * 2007-09-27 2009-04-23 Casio Comput Co Ltd 光検出器
JP2009212278A (ja) * 2008-03-04 2009-09-17 Sony Corp 光検出回路
JP2011227863A (ja) * 2010-03-31 2011-11-10 Casio Comput Co Ltd 光センサ装置及び光センサ装置の駆動方法
US8368677B2 (en) 2010-03-31 2013-02-05 Casio Computer Co., Ltd. Optical sensor device, display apparatus, and method for driving optical sensor device
TWI479389B (zh) * 2010-03-31 2015-04-01 Casio Computer Co Ltd 光感測裝置、顯示裝置及光感測裝置之驅動方法

Also Published As

Publication number Publication date
CN1503378A (zh) 2004-06-09
US6919552B2 (en) 2005-07-19
CN1503378B (zh) 2010-11-10
US20040099791A1 (en) 2004-05-27

Similar Documents

Publication Publication Date Title
Yotter et al. A review of photodetectors for sensing light-emitting reporters in biological systems
US6919552B2 (en) Optical detector and method for detecting incident light
Wang et al. Performance analysis of a 4H-SiC npn phototransistor with floating base for ultraviolet light detection
WO2010047058A1 (ja) 光半導体装置
US20090261441A1 (en) Optical semiconductor device
US20030087466A1 (en) Phototransistor device
JP2933870B2 (ja) 光検出装置及びその製造方法
JP2004214598A (ja) フォトダイオード、これを備えた光電子集積回路装置及びその製造方法
US5721447A (en) Photodetector and a method for the fabrication thereof
JP4045170B2 (ja) アバランシェフォトダイオードの特性定義方法
US20040089790A1 (en) Spatially modulated photodetectors
Xiong et al. An integrated fluorescence optical fiber temperature sensor front-end based on a ring-gate-isolated photodiode
JPH0517492B2 (enExample)
JP4443390B2 (ja) 半導体光検出装置
JP3155191B2 (ja) 微弱光測定装置
US12009439B2 (en) Photodiode and method for operating a photodiode
JP2000138393A (ja) 放射線検出器
Marwick et al. A UV photodetector with internal gain fabricated in silicon on sapphire CMOS
JP2013229436A (ja) 半導体装置、照度センサ、及び半導体装置の製造方法
Zhou et al. High-dynamic-range photodetecting scheme based on PEPT with a large output swing
CN113114196B (zh) 一种光电放大集成三极管芯片
JP3696177B2 (ja) 光リモコン用受光モジュール
JP5218370B2 (ja) 電流増幅回路及び光検出デバイス
JP3177287B2 (ja) 受光モジュ−ル
JP2005101272A (ja) 集積化ｐｉｎホトダイオードセンサ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061101

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061101

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070320

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20070411

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20070501