JP2004177972A - Active matrix substrate and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an active matrix substrate, on which a thick insulation film can be suitably formed around an organic semiconductor film of a thin film light emitting element, without damaging the light emitting element. <P>SOLUTION: In the active matrix substrate having a plurality of pixel electrodes, the insulation film is provided around each of the plurality of pixel electrodes. The insulation film includes a first insulation film consisting of an inorganic material and a second insulation film formed on the first insulation film and consisting of an organic material or an inorganic material, in which the insulation film overlaps with a part of the pixel electrode. <P>COPYRIGHT: (C)2004,JPO

Description

  According to the present invention, a thin film light emitting element such as an EL (electroluminescence) element or an LED (light emitting diode) element that emits light when a drive current flows through an organic semiconductor film is controlled by a thin film transistor (hereinafter, referred to as a TFT). The present invention relates to a display device and an active matrix substrate used for the display device.

  An active matrix type display device using a current control type light emitting element such as an EL element or an LED element has been proposed. All of the light emitting elements used in this type of display device emit light by themselves, so that unlike a liquid crystal display device, there is an advantage that a backlight is not required and the viewing angle dependency is small.

  FIG. 22 is a block diagram of an active matrix display device using such a charge injection type organic thin film EL element. In the active matrix display device 1A shown in this figure, a plurality of scanning lines gate and a plurality of data lines sig extending in a direction intersecting with the extending direction of the scanning lines gate are formed on the transparent substrate 10. , A plurality of common power supply lines com arranged in parallel with the data line sig, and a plurality of pixels 7 formed in a matrix by the data line sig and the scanning line gate. A data side drive circuit 3 and a scan side drive circuit 4 are configured for the data line sig and the scan line gate. Each pixel 7 has a conduction control circuit 50 to which a scanning signal is supplied via a scanning line gate, and a thin film light emitting element which emits light based on an image signal supplied from a data line sig via the conduction control circuit 50 40 are constituted. In the example shown here, the conduction control circuit 50 includes a first TFT 20 for supplying a scanning signal to a gate electrode via a scanning line gate, and an image signal supplied from a data line sig via the first TFT 20. And a second TFT 30 for supplying an image signal held by the storage capacitor cap to the gate electrode. The second TFT 30 and the thin-film light-emitting element 40 are connected in series between a common electrode op and a common power supply line com described later. When the second TFT 30 is turned on, the thin-film light-emitting element 40 emits light when a driving current flows from the common power supply line com, and the light-emitting state is held for a predetermined period by the storage capacitor cap.

  In the active matrix display device 1A having such a configuration, as shown in FIGS. 23 and 24A and 24B, in each of the pixels 7, the first TFT 20 is formed using an island-shaped semiconductor film. And a second TFT 30. In the first TFT 20, the gate electrode 21 is configured as a part of the scanning line gate. In the first TFT 20, the data line sig is electrically connected to one of the source / drain regions via the contact hole of the first interlayer insulating film 51, and the drain electrode 22 is electrically connected to the other. The drain electrode 22 extends toward the formation region of the second TFT 30, and the gate electrode 31 of the second TFT 30 is electrically connected to the extension portion via a contact hole of the first interlayer insulating film 51. Connected. A relay electrode 35 is electrically connected to one of the source / drain regions of the second TFT 30 via a contact hole of a first interlayer insulating film 51, and the relay electrode 35 is connected to a second interlayer insulating film 52. The pixel electrode 41 of the thin-film light emitting element 40 is electrically connected through the contact hole.

  The pixel electrode 41 is independently formed for each pixel 7 as can be seen from FIGS. 23 and 24B and 24C. On the upper layer side of the pixel electrode 41, an organic semiconductor film 43 and a counter electrode op are stacked in this order. The organic semiconductor film 43 is formed for each pixel 7, but may be formed in a stripe shape over a plurality of pixels 7. The opposing electrode op is formed not only on the display section 11 in which the pixels 7 are formed but also on the substantially entire surface of the transparent substrate 10.

  Again, in FIG. 23 and FIG. 24A, the common power supply line com is electrically connected to the other of the source / drain regions of the second TFT 30 via the contact hole of the first interlayer insulating film 51. ing. The extension 39 of the common power supply line com faces the extension 36 of the gate electrode 31 of the second TFT 30 with the first interlayer insulating film 51 interposed therebetween as a dielectric film, and forms a storage capacitor cap. are doing.

  However, in the active matrix display device 1A, the counter electrode op facing the pixel electrode 41 is different from the liquid crystal active matrix display device in that the counter electrode op is provided on the same transparent substrate 10 between the data line sig and the second electrode op. Since only the interlayer insulating film 52 is interposed, a large capacitance is parasitic on the data line sig, and the load on the data side drive circuit 3 is large.

  Then, as shown in FIGS. 22, 23 and FIGS. 25 (A), (B) and (C), the present inventor has proposed a method of forming a thick insulating film (bank layer) between the opposing electrode op and the data line sig. (a region in which bank / lower left diagonal lines are added at a wide pitch) is proposed to reduce the parasitic capacitance of the data line sig. At the same time, by surrounding the formation region of the organic semiconductor film 43 with this insulating film (bank layer bank), when forming the organic semiconductor film 43 from the liquid material (discharge liquid) discharged from the ink jet head, the discharge liquid is banked. It is proposed to dam by the layer bank to prevent the discharged liquid from protruding to the side.

  However, when adopting such a structure, if the entire bank layer bank is made of a thick inorganic material, there is a problem that the film formation time is long. Further, when patterning a thick film made of an inorganic material, the pixel electrode 41 may be damaged due to over-etching. On the other hand, when the bank layer bank is formed of an organic material such as a resist, the organic semiconductor film 43 is formed at a portion of the organic semiconductor film 43 which is in contact with the bank layer bank due to a solvent component contained in the organic material forming the bank layer bank. There is a risk of deterioration.

  Further, when a thick bank layer bank is formed, a large step bb is formed due to the existence of the bank layer bank. Therefore, the counter electrode op formed on the bank layer bank is disconnected at the step bb. There is a problem that it is easy to do. When a break occurs in the opposing electrode op due to such a step bb, the opposing electrode op in this portion becomes insulated from the surrounding opposing electrode op and generates a point defect or a line defect in display. Further, when a break occurs in the opposing electrode op along the outer peripheral edge of the bank layer bank covering the surfaces of the data side driving circuit 3 and the scanning side driving circuit 4, the gap between the opposing electrode op of the display unit 11 and the terminal 12 becomes complete. The display becomes insulated and no display can be performed at all.

  In view of the above problems, an object of the present invention is to provide an active matrix display device capable of suitably forming a thick insulating film around an organic semiconductor film of a thin-film light-emitting element without damaging the thin-film light-emitting element. Is to provide.

Further, an object of the present invention is to provide an active matrix type display in which even if a thick insulating film is formed around an organic semiconductor film to suppress parasitic capacitance and the like, disconnection does not occur in a counter electrode formed above this thick insulating film. It is to provide a device.

  The active matrix substrate according to the present invention is an active matrix substrate including a plurality of pixel electrodes, wherein an insulating film is provided around each of the plurality of pixel electrodes, and the insulating film is made of an inorganic material. And a second insulating film formed on the first insulating film and made of an organic material or an inorganic material, wherein the insulating film and a part of the pixel electrode overlap with each other. It is characterized by the following.

  A thin-film light-emitting element including: each of the plurality of pixel electrodes; a counter electrode facing the plurality of pixel electrodes; and an organic semiconductor film disposed therebetween. It is characterized by being partitioned by a membrane.

  Further, a plurality of scanning lines, a plurality of data lines, and a plurality of pixels formed in a matrix by the plurality of scanning lines and the plurality of data lines, each of the plurality of pixels A conduction control circuit including a transistor having a gate electrode connected to a corresponding scanning line among the plurality of scanning lines, a pixel electrode, a counter electrode facing the pixel electrode, and between the pixel electrode and the counter electrode. A thin-film light-emitting element including an organic semiconductor film provided in the display device, wherein the organic semiconductor film is partitioned by an insulating film provided between the data line and the counter electrode, The film includes the first insulating film made of an inorganic material, and a second insulating film formed on the first insulating film and made of an organic material or an inorganic material, and the insulating film and the pixel One of the electrodes Door, characterized in that it is made to overlap.

  Further, a region of the pixel electrode overlapping a region where the conduction control circuit is formed is covered with the insulating film.

  Further, in the region partitioned by the insulating film, a corner portion is rounded.

  Further, the first insulating film is formed so as to cover the plurality of data lines and the plurality of scanning lines.

  The organic semiconductor film emits light when a drive current flows between the plurality of pixel electrodes and the counter electrode.

  In the present invention, a plurality of scanning lines, a plurality of data lines extending in a direction intersecting with the extending direction of the scanning lines, and a matrix of the data lines and the scanning lines are provided on the substrate. A display unit including a plurality of pixels formed, each of which is formed with a conduction control circuit including a thin film transistor in which a scanning signal is supplied to a gate electrode through the scanning line, and a pixel formed for each pixel. A pixel electrode, an organic semiconductor film stacked on the upper side of the pixel electrode, and a thin film light emitting element including a counter electrode stacked on the upper side of the organic semiconductor film, and the conduction control circuit is formed from the data line. In the active matrix display device in which the thin-film light-emitting element emits light based on an image signal supplied via the organic semiconductor film, a region where the organic semiconductor film is formed is defined by an insulating film formed to be thicker than the organic semiconductor film. The insulating film includes a lower insulating film made of an inorganic material and formed thicker than the organic semiconductor film, and an upper insulating film made of an organic material laminated on the lower insulating film. It is characterized by the following.

  In the present invention, since the counter electrode is formed at least on the entire surface of the display portion and is in a state of facing the data line, a large capacitance is parasitic on the data line as it is. However, in the present invention, since a thick insulating film is interposed between the data line and the counter electrode, it is possible to prevent the data line from having a parasitic capacitance. As a result, the load on the data-side driving circuit can be reduced, so that low power consumption or high-speed display operation can be achieved. In addition, when a thick insulating film is formed by using a film made of an inorganic material as a whole, a long film forming time is required, so that productivity is reduced. However, in the present invention, only the lower insulating film that is in contact with the organic semiconductor film of the thin-film light emitting element is made of an inorganic material, and the upper insulating film made of an organic material such as a resist is stacked on the upper insulating film. If the upper insulating film is made of such an organic material, a thick film can be easily formed, thereby improving the productivity. Moreover, the upper insulating film is not in contact with the organic semiconductor film, and is in contact with the organic semiconductor film because the lower insulating film is made of an inorganic material, so that the organic semiconductor film is deteriorated under the influence of the upper insulating film. Nothing. Therefore, the thin-film light-emitting element does not cause a decrease in luminous efficiency or a decrease in reliability.

  In the present invention, it is preferable that the upper insulating film is stacked in a region inside the lower insulating film with a width smaller than that of the lower insulating film. With such a two-stage structure, the upper insulating film made of an organic material is less likely to be in contact with the organic semiconductor film, so that deterioration of the organic semiconductor film can be more reliably prevented.

  In such a two-stage structure, both the lower insulating film and the upper insulating film may be made of an inorganic material. That is, in another aspect of the present invention, a plurality of scanning lines, a plurality of data lines extending in a direction intersecting the direction in which the scanning lines extend on the substrate, A display unit including a plurality of pixels formed in a matrix by lines and each of the pixels includes a conduction control circuit including a thin film transistor in which a scan signal is supplied to a gate electrode through the scan line; A data electrode comprising: a pixel electrode formed for each pixel; an organic semiconductor film laminated on an upper layer side of the pixel electrode; and a thin film light emitting device including a counter electrode laminated on the organic semiconductor film. In the active matrix display device in which the thin-film light-emitting element emits light based on an image signal supplied from the semiconductor device through the conduction control circuit, the formation region of the organic semiconductor film is formed to be thicker than the organic semiconductor film. The lower insulating film made of an inorganic material, and the upper insulating film made of an inorganic material having a width smaller than that of the lower insulating film and stacked in an inner region of the lower insulating film. And a membrane.

  With this configuration, after forming a film made of an inorganic material to constitute the lower insulating film and the upper insulating film, first, the upper insulating film is patterned. In this case, since the lower insulating film functions as an etching stopper, even if there is some over-etching, the pixel electrode is not damaged. After the completion of the patterning, the lower insulating film is formed by patterning. At this time, since only one layer of the lower insulating film is etched, the etching control is easy, and over-etching that may damage the pixel electrode does not occur.

  In the present invention, the conduction control circuit includes a first TFT to which the scanning signal is supplied to a gate electrode, and a second TFT whose gate electrode is connected to the data line via the first TFT. It is preferable that the second TFT and the thin-film light emitting element are connected in series between a common power supply line for supplying a drive current, which is formed separately from the data line and the scanning line, and the counter electrode. In other words, the conduction control circuit can be composed of one TFT and a storage capacitor, but from the viewpoint of improving display quality, the conduction control circuit of each pixel can be composed of two TFTs and a storage capacitor. preferable.

  In the present invention, it is preferable that the insulating film is used as a bank layer for preventing a discharge liquid from protruding when the organic semiconductor film is formed in a region defined by the insulating film by an inkjet method. To this end, the insulating film preferably has a thickness of 1 μm or more.

  In the present invention, it is preferable that, of the pixel electrode formation region, a region overlapping with the conduction control circuit formation region is covered with the insulating film. That is, it is preferable that the thick insulating film is opened only in a flat portion where the conduction control circuit is not formed in the pixel electrode formation region, and the organic semiconductor film is formed only inside the thick insulating film. With this configuration, it is possible to prevent display unevenness due to variation in the thickness of the organic semiconductor film. In addition, when there is a thin portion in the organic semiconductor film, the driving current of the thin-film light-emitting element is concentrated there, and the reliability of the thin-film light-emitting element is reduced. However, such a problem can be prevented. it can. Furthermore, even if a pixel electrode is formed, even if a driving current flows between the counter electrode and the organic semiconductor film in a region overlapping with the conduction control circuit, the light is blocked by the conduction control circuit and the display is blocked. Does not contribute to The drive current flowing through the organic semiconductor film in a portion that does not contribute to display can be said to be a reactive current from the viewpoint of display. Therefore, in the present invention, the above-described thick insulating film is formed in a portion where such a reactive current would otherwise flow, and a drive current is prevented from flowing therethrough. As a result, the current flowing through the common power supply line can be reduced, and accordingly, if the width of the common power supply line is reduced, the light emitting area can be increased, and the display performance such as brightness and contrast ratio can be increased. Can be improved.

  In the present invention, if the corners of the region defined by the insulating film are rounded, the organic semiconductor film can be formed in a planar shape with no rounded corners. With an organic semiconductor film having such a shape, since a driving current does not concentrate at a corner portion, it is possible to prevent a problem such as insufficient breakdown voltage at this portion.

  In the present invention, when the organic semiconductor film is formed in a stripe shape, in the insulating film, the lower insulating film is a region overlapping the conduction control circuit forming region in the pixel electrode forming region, The upper insulating film is formed in a stripe shape along the data line while being formed so as to cover the data line, the common power supply line, and the scanning line, and is partitioned in a stripe shape by the upper insulating film. The organic semiconductor film is formed, for example, by an ink-jet method in the region.

  In such a configuration, since the conduction control circuit is covered with the lower insulating film, only the organic semiconductor film formed only on the flat portion of the pixel electrode in each pixel contributes to light emission. That is, the thin film light emitting element is formed only on the flat portion of the pixel electrode. Therefore, the organic semiconductor film is formed with a constant thickness, and does not cause display unevenness. Further, since the drive current is prevented from flowing to the portion that does not contribute to the display by the lower insulating film, there is also an effect that unnecessary current can be prevented from flowing to the common power supply line. Further, with such a configuration, a portion of the insulating film where the lower-layer insulating film and the upper-layer insulating film overlap each other is a bank for preventing the overflow of the discharge liquid when the organic semiconductor film is formed by the inkjet method. Available as layers. When used as such a bank layer, it is preferable that the portion where the lower insulating film and the upper insulating film overlap has a thickness of 1 μm or more.

  Further, in the present invention, it is preferable that the insulating film has a first discontinuous portion connecting the opposing electrode portions of the respective pixels via a flat portion having no step due to the insulating film. In the present invention, if the insulating film is formed thick, the insulating film forms a large step, and there is a possibility that the opposing electrode formed on the upper layer may be disconnected. However, in the present invention, the first discontinuous portion is formed at a predetermined position of the thick insulating film, and this portion is flattened. Therefore, since the opposing electrodes in each region are electrically connected to each other via the portion formed in the flat portion, even if the portion is disconnected at this portion due to a step caused by the insulating film, the first interruption of the insulating film is caused. Since the electrical connection is securely made via the flat portion corresponding to the portion, the problem of disconnection of the counter substrate does not occur. Therefore, in an active matrix type display device, even if a thick insulating film is formed around an organic semiconductor film to suppress parasitic capacitance and the like, a disconnection does not occur in a counter electrode formed above the insulating film. The display quality and reliability of the type display device can be improved.

  In the present invention, when the insulating film surrounds a region where the organic semiconductor film is formed by being formed along the data line and the scanning line, an extending direction of the data line is provided. Preferably, the first discontinuous portion is formed between adjacent pixels, between adjacent pixels in the scanning line extending direction, or between adjacent pixels in both directions.

  In some cases, the insulating film extends in a stripe shape along the data line. In this case, the first interrupted portion may be formed at at least one end in the extending direction. Good.

  According to the present invention, a data-side driving circuit for supplying a data signal via the data line and a scanning-side driving circuit for supplying a scanning signal via the scanning line are provided around the display section, The insulating film is also formed on the upper layer side of the side drive circuit and the data side drive circuit, and the insulating film is provided between the formation region of the scan side drive circuit and the formation region of the data side drive circuit. It is preferable that a corresponding portion has a second discontinuous portion connecting the counter electrode to the display portion side and the outer peripheral side of the substrate via a flat portion having no step due to the insulating film. With such a configuration, even if a break occurs in the counter electrode along the outer peripheral edge of the insulating film covering the surface of the data-side drive circuit or the scan-side drive circuit, the counter electrode on the display unit side and the counter electrode on the outer peripheral side of the substrate can be connected. Are connected via a flat portion having no step due to the insulating film, and electrical connection between the counter electrode on the display portion side and the counter electrode on the outer peripheral side of the substrate can be secured.

In the present invention, in the discontinued portion, a configuration in which both the lower insulating film and the upper insulating film constituting the insulating film are interrupted, or the lower insulating film and the upper layer constituting the insulating film Of the insulating films, any of the configurations in which only the upper insulating film is interrupted may be used.

  Embodiments of the present invention will be described with reference to the drawings. In the following description, the same reference numerals are given to portions common to the components described with reference to FIGS.

Embodiment 1

(overall structure)
FIG. 1 is a block diagram schematically showing an overall layout of an active matrix display device. FIG. 2 is a plan view showing one of the pixels formed therein, and FIGS. 3A, 3B, and 3C are AA 'sectional view and BB' sectional view of FIG. 2, respectively. It is a figure and CC 'sectional drawing.

  In the active matrix display device 1 shown in FIG. 1, a central portion of a transparent substrate 10 serving as a base is a display unit 11. In the outer peripheral portion of the transparent substrate 10, a data drive circuit 3 for outputting an image signal is formed at an end of the data line sig, and a scan drive circuit 4 for outputting a scan signal is provided at an end of the scan line gate. It is configured. In these driving circuits 3 and 4, a complementary TFT is formed by the N-type TFT and the P-type TFT, and the complementary TFT forms a shift register circuit, a level shifter circuit, an analog switch circuit and the like. In the display unit 11, similarly to the active matrix substrate of the liquid crystal active matrix type display device, a plurality of scanning lines “gate” are provided on the transparent substrate 10 in a direction intersecting the extending direction of the scanning lines “gate”. A plurality of data lines sig and a plurality of pixels 7 formed in a matrix by the data lines sig and the scanning lines gate are configured.

  Each pixel 7 has a conduction control circuit 50 to which a scanning signal is supplied via a scanning line gate, and a thin film light emitting element which emits light based on an image signal supplied from a data line sig via the conduction control circuit 50 40 are constituted. In the example shown here, the conduction control circuit 50 includes a first TFT 20 to which a scanning signal is supplied to a gate electrode via a scanning line gate, and an image supplied from a data line sig via the first TFT 20. A storage capacitor cap for holding signals and a second TFT 30 for supplying an image signal held by the storage capacitor cap to the gate electrode. The second TFT 30 and the thin-film light-emitting element 40 are connected in series between a common electrode op and a common power supply line com described later. The storage capacitor cap may be formed between the scanning line gate and a capacitor line formed in parallel, in addition to the structure formed between the storage capacitor cap and the common power supply line com.

  In the active matrix display device 1 having such a configuration, as shown in FIGS. 2 and 3A and 3B, each of the pixels 7 uses an island-shaped semiconductor film (silicon film). A first TFT 20 and a second TFT 30 are formed.

  In the first TFT 20, the gate electrode 21 is configured as a part of the scanning line gate. In the first TFT 20, the data line sig is electrically connected to one of the source / drain regions via the contact hole of the first interlayer insulating film 51, and the drain electrode 22 is electrically connected to the other. The drain electrode 22 extends toward the formation region of the second TFT 30, and the gate electrode 31 of the second TFT 30 is electrically connected to the extension portion via a contact hole of the first interlayer insulating film 51. Connected.

  A relay electrode 35 formed simultaneously with the data line sig is electrically connected to one of the source / drain regions of the second TFT 30 via a contact hole of the first interlayer insulating film 51. Is electrically connected to a transparent pixel electrode 41 made of an ITO (Indium Tin Oxide) film of the thin-film light emitting element 40 through a contact hole of the second interlayer insulating film 52.

  As can be seen from FIGS. 2 and 3B and 3C, the pixel electrode 41 is formed independently for each pixel 7. On the upper layer side of the pixel electrode 41, an organic semiconductor film 43 such as polyphenylene vinylene (PPV) and a counter electrode op formed of a metal film such as lithium-containing aluminum or calcium are laminated in this order, and a thin-film light emitting element 40 is formed. I have. In the example shown here, the organic semiconductor film 43 is formed in each pixel 7, but may be formed in a stripe shape over a plurality of pixels 7 as described later. The counter electrode op is formed in the entire display unit 11 and in a region excluding at least a portion around a portion where the terminal 12 is formed. The terminal 12 includes a terminal electrically connected to a counter electrode op formed using a wiring (not shown) formed simultaneously with the counter electrode op.

  As the thin-film light-emitting element 40, a structure in which a hole injection layer is provided to increase luminous efficiency (hole injection rate), a structure in which an electron injection layer is provided to increase luminous efficiency (electron injection rate), a hole injection layer, A structure in which both of the electron injection layers are formed may be adopted.

  Referring again to FIGS. 2 and 3A, a common power supply line com is electrically connected to the other of the source / drain regions of the second TFT 30 via the contact hole of the first interlayer insulating film 51. I have. The extension 39 of the common power supply line com faces the extension 36 of the gate electrode 31 of the second TFT 30 with the first interlayer insulating film 51 interposed therebetween as a dielectric film, and forms a storage capacitor cap. are doing. The storage capacitor cap may be formed between the scanning line gate and a capacitor line formed in parallel, in addition to the structure formed between the common power supply line com and the storage capacitor cap. The storage capacitor cap may be configured using the gate electrode 31 of the second TFT 30.

  In the active matrix display device 1 configured as described above, when the first TFT 20 is turned on by being selected by the scanning signal, the image signal from the data line sig is applied to the gate of the second TFT 30 via the first TFT 20. While being applied to the electrode 31, an image signal is written to the storage capacitor cap via the first TFT 20. As a result, when the second TFT 30 is turned on, a voltage is applied using the counter electrode op and the pixel electrode 41 as a negative electrode and a positive electrode, respectively, and a current flowing through the organic semiconductor film 43 in a region where the applied voltage exceeds the threshold voltage. (Drive current) sharply increases. Therefore, the light emitting element 40 emits light as an electroluminescent element or an LED element, and the light of the light emitting element 40 is reflected by the opposing electrode op and transmitted through the transparent pixel electrode 41 and the transparent substrate 10 to be emitted. A drive current for performing such light emission flows through a current path including the counter electrode op, the organic semiconductor film 43, the pixel electrode 41, the second TFT 30, and the common power supply line com. When turned off, the flow stops. However, the gate electrode of the second TFT 30 is held at a potential corresponding to an image signal by the storage capacitor cap even when the first TFT 20 is turned off, so that the second TFT 30 remains on. . Therefore, the driving current continues to flow through the light emitting element 40, and this pixel remains in the lighting state. This state is maintained until new image data is written to the storage capacitor cap and the second TFT 30 is turned off.

(Bank layer structure)
In the active matrix display device 1 configured as described above, in the present embodiment, in order to prevent a large capacitance from being parasitic on the data line sig, FIGS. 1, 2, and 3A, 3B, As shown in (C), along the data line sig and the scanning line gate, an insulating film thicker than the organic semiconductor film 41 (one diagonal line of the bank layer bank / lower left, or a pair of diagonal lines of two lines). A region with a wide pitch) is provided, and an opposing electrode op is formed on the upper side of the bank layer bank. That is, since the second interlayer insulating film 52 and the thick bank layer bank intervene between the data line sig and the counter electrode op, the capacitance parasitic on the data line sig is extremely small. Therefore, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Here, the bank layer bank is composed of a lower insulating film 61 made of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41 and a resist laminated on the lower insulating film 61. Alternatively, it is composed of an upper insulating film 62 made of an organic material such as a polyimide film. For example, the thicknesses of the organic semiconductor film 41, the lower insulating film 61, and the upper insulating film 62 are 0.05 μm to 0.2 μm, 0.2 μm to 1.0 μm, and 1 μm to 2 μm, respectively.

  With such a two-layer structure, since the upper insulating film 62 is made of a resist or a polyimide film that can easily form a thick film, if only the lower insulating film 61 is made of an inorganic material, Good. Therefore, unlike the case where the entire bank layer bank is made of an inorganic material, it is not necessary to form a film made of an inorganic material over a long time by a PECVD method or the like. Therefore, the productivity of the active matrix display device 1 can be improved.

  Further, in such a two-layer structure, the organic semiconductor film 41 is in contact with the lower insulating film 61 made of an inorganic material, but not in contact with the upper insulating film 62 made of an organic material. Therefore, the organic semiconductor film 41 does not deteriorate under the influence of the upper insulating film 62 made of an organic material. Absent.

  As can be seen from FIG. 1, since the bank layer bank is also formed in the peripheral area of the transparent substrate 10 (the area outside the display section 11), the data side driving circuit 3 and the scanning side driving circuit 4 are also provided in the bank layer bank. Covered by The counter electrode op needs to be formed at least in the display unit 11, and does not need to be formed in the drive circuit area. However, since the opposing electrode op is usually formed by the mask sputtering method, alignment accuracy is poor, and the opposing electrode op and the driving circuit may overlap. However, in this embodiment, even when the opposing electrode op overlaps the formation region of these driving circuits, the bank layer bank is interposed between the wiring layer of the driving circuit and the opposing electrode op. Therefore, since parasitic capacitance can be prevented from being generated in the driving circuits 3 and 4, the load on the driving circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Further, in the present embodiment, a bank layer bank is also formed in a region where the pixel electrode 41 is formed and overlaps with the relay electrode 35 of the conduction control circuit 50. Therefore, the organic semiconductor film 43 is not formed in a region overlapping with the relay electrode 35. That is, since the organic semiconductor film 43 is formed only in a flat portion in the region where the pixel electrode 41 is formed, the organic semiconductor film 43 is formed to have a constant film thickness and does not cause display unevenness. Further, if the organic semiconductor film 43 has a thin portion, the driving current of the thin-film light-emitting element 40 concentrates there, and the reliability of the thin-film light-emitting element 40 is reduced. can do. Furthermore, if there is no bank layer bank in a region overlapping with the relay electrode 35, a driving current flows between this portion and the counter electrode op, and the organic semiconductor film 43 emits light. However, this light is sandwiched between the relay electrode 35 and the counter electrode op and is not emitted outside, and does not contribute to display. The drive current flowing in such a portion that does not contribute to display can be said to be a reactive current in terms of display. However, in the present embodiment, a bank layer bank is formed in a portion where such a reactive current would otherwise flow, and a drive current is prevented from flowing through the bank layer, thereby preventing a wasteful current from flowing through the common power supply line com. it can. Therefore, the width of the common feed line com may be narrower accordingly. As a result, the light emitting area can be increased, and display performance such as luminance and contrast ratio can be improved.

  When the bank layer bank is formed of a black resist, the bank layer bank functions as a black matrix, and display quality such as a contrast ratio is improved. That is, in the active matrix display device 1 according to the present embodiment, since the opposing electrode op is formed on the entire surface of the pixel 7 on the front surface side of the transparent substrate 10, light reflected by the opposing electrode op lowers the contrast ratio. However, if the bank layer bank having the function of preventing the parasitic capacitance is formed of a black resist, the bank layer bank also functions as a black matrix and blocks light reflected from the opposing electrode op, thereby improving the contrast ratio.

(Method of Manufacturing Active Matrix Display Device)
Since the bank layer bank thus formed is configured to surround the formation region of the organic semiconductor film 43, in the manufacturing process of the active matrix display device, a liquid material (discharged liquid) discharged from the inkjet head is used in the manufacturing process of the active matrix display device. When the organic semiconductor film 43 is formed, the discharged liquid is dammed to prevent the discharged liquid from protruding to the side. In the method of manufacturing the active matrix display device 1 described below, the steps up to manufacturing the first TFT 20 and the second TFT 30 on the transparent substrate 10 are performed by using the active matrix substrate of the active matrix liquid crystal display device. Since the manufacturing process is substantially the same, only the outline thereof will be briefly described with reference to FIGS. 3 (A), 3 (B) and 3 (C).

  First, if necessary, an underlying protective film made of a silicon oxide film having a thickness of about 2000 to 5000 angstroms by plasma CVD using TEOS (tetraethoxysilane), oxygen gas, or the like as a source gas, if necessary. (Not shown)), a semiconductor film made of an amorphous silicon film having a thickness of about 300 to 700 angstroms is formed on the surface of the base protective film by a plasma CVD method. Next, a crystallization step such as laser annealing or a solid phase growth method is performed on the semiconductor film made of the amorphous silicon film to crystallize the semiconductor film into a polysilicon film.

  Next, the semiconductor film is patterned into an island-shaped semiconductor film. The surface of the island-shaped semiconductor film is formed with a thickness of about 600 to 1500 angstroms by plasma CVD using TEOS (tetraethoxysilane), oxygen gas or the like as a source gas. A gate insulating film 57 made of an oxide film or a nitride film is formed.

  Next, after a conductive film made of a metal film of aluminum, tantalum, molybdenum, titanium, tungsten, or the like is formed by a sputtering method, patterning is performed to form the gate electrodes 21 and 31 and the extended portion 36 of the gate electrode 31 ( Gate electrode forming step). In this step, a scanning line gate is also formed.

  In this state, high concentration phosphorus ions are implanted to form source / drain regions in a self-aligned manner with respect to the gate electrodes 21 and 31. Note that a portion where the impurity is not introduced becomes a channel region.

  Next, after forming the first interlayer insulating film 51, each contact hole is formed, and then the data line sig, the drain electrode 22, the common power supply line com, the extended portion 39 of the common power supply line com, and the relay An electrode 35 is formed. As a result, the first TFT 20, the second TFT 30, and the storage capacitor cap are formed.

  Next, a second interlayer insulating film 52 is formed, and a contact hole is formed in a portion corresponding to the relay electrode 35 in this interlayer insulating film. Next, after an ITO film is formed on the entire surface of the second interlayer insulating film 52, patterning is performed, and the pixel electrode 41 electrically connected to the source / drain region of the second TFT 30 via the contact hole is formed on the pixel 7. It is formed every time.

  Next, after a film made of an inorganic material (an inorganic film for forming the lower insulating film 61) is formed on the surface side of the second interlayer insulating film 52 by a PECVD method or the like, the scan line gate and the data line sig are formed. A resist (upper-layer insulating film 62) is formed along. Thereafter, using the resist as a mask, the film made of an inorganic material is patterned to form a lower insulating film 61. Even when the lower insulating film 61 is formed by patterning in this manner, overetching does not occur because the lower insulating film 61 is thin. Therefore, the pixel electrode 41 is not damaged.

  When such an etching step is performed, the film made of the inorganic material remains along the scanning line gate and the data line sig, and the lower insulating film 61 is formed. Thus, a bank layer bank having a two-layer structure including the lower insulating film 61 and the upper insulating film 62 is formed. At this time, the resist portion left along the data line sig is wide so as to cover the common power supply line com. As a result, the region of the light emitting element 40 where the organic semiconductor film 43 is to be formed is surrounded by the bank layer bank.

  Next, each organic semiconductor film 43 corresponding to R, G, and B is formed in a region partitioned in a matrix by the bank layer bank using an inkjet method. For this purpose, a liquid material (precursor / discharge liquid) for forming the organic semiconductor film 43 is discharged from the ink jet head to the inner region of the bank layer bank, and is fixed in the inner region of the bank layer bank. Thus, an organic semiconductor film 43 is formed. Here, since the upper insulating film 62 of the bank layer bank is made of a resist or a polyimide film, it is water repellent. On the other hand, since the precursor of the organic semiconductor film 43 uses a hydrophilic solvent, the application area of the organic semiconductor film 43 is definitely defined by the bank layer bank, and does not protrude into the adjacent pixels 7. Therefore, the organic semiconductor film 43 and the like can be formed only in the predetermined region.

  In this step, the precursor discharged from the inkjet head rises to a thickness of about 2 μm to about 4 μm due to the effect of surface tension, so that the bank layer bank needs a thickness of about 1 μm to about 3 μm. In this state, the precursor discharged from the inkjet head is in contact with the upper insulating film 62. However, after the heat treatment at 100 ° C. to 150 ° C., the solvent component is removed from the precursor, so that the bank layer The thickness of the organic semiconductor film 43 after being fixed inside the bank is about 0.05 μm to about 0.2 μm. Therefore, in this state, the organic semiconductor film 43 is not in contact with the upper insulating film 62.

  Note that, if the partition wall composed of the bank layer bank has a height of 1 μm or more in advance, the bank layer bank sufficiently functions as a partition even if the bank layer bank is not water-repellent. If such a thick bank layer bank is formed, a region where the organic semiconductor film 43 is formed can be defined even when the organic semiconductor film 43 is formed by a coating method instead of the inkjet method.

  Thereafter, the opposing electrode op is formed on substantially the entire surface of the transparent substrate 10.

  According to such a manufacturing method, since each organic semiconductor film 43 corresponding to R, G, and B can be formed in a predetermined region by using an ink jet method, a full-color active matrix display device 1 can be produced at a high production rate. It can be manufactured by nature.

  Note that TFTs are also formed in the data-side driving circuit 3 and the scanning-side driving circuit 4 shown in FIG. 1, and these TFTs use all or a part of the process of forming the TFTs in the pixel 7 described above. Done. Therefore, the TFT constituting the drive circuit is also formed between the same layers as the TFT of the pixel 7. As for the first TFT 20 and the second TFT 30, both may be N-type, both may be P-type, one may be N-type, and the other may be P-type. Since a TFT can be formed by a well-known method, the description thereof will be omitted.

Embodiment 2

  FIGS. 4A, 4B, and 4C show positions corresponding to the lines AA ', BB', and CC 'in FIG. 2 in the active matrix display device of the present embodiment, respectively. FIG. Since the present embodiment and the first embodiment have the same basic configuration, the same reference numerals are given to the common parts in FIG. 4 and the detailed description thereof will be omitted. Since the formation region of the bank layer bank in the active matrix display device of this embodiment is the same as that of the first embodiment, the description will be made with reference to FIGS.

  Also in the present embodiment, as shown in FIGS. 1, 2, 4A, 4B and 4C, the data line sig and the scanning line An insulating film thicker than the organic semiconductor film 41 (a bank layer bank / a region in which one diagonal line at the lower left or a pair of diagonal lines is provided at a wide pitch) is provided along the gate. The opposing electrode op is formed on the upper layer side.

  Here, the bank layer bank is composed of a lower insulating film 61 made of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41 and a resist laminated on the lower insulating film 61. Alternatively, the second embodiment is the same as the first embodiment in that the second embodiment includes an upper insulating film 62 made of an organic material such as a polyimide film.

  In this embodiment, as can be seen from FIGS. 4A, 4B, and 4C, the upper insulating film 61 made of an organic material has a width smaller than that of the lower insulating film 61 made of an inorganic material. The insulating film 61 is stacked in the inner region. For example, the width of the overlapping portion between the upper insulating film 61 and the pixel electrode 41 is 1 μm to 3 μm, and there is a shift of 1 μm to 5 μm on one side between the lower insulating film 61 and the upper insulating film 62. Therefore, the bank layer bank has a two-stage structure in which the lower insulating film 61 and the upper insulating film 61 having different widths are stacked. With such a two-stage structure, since the upper insulating film 62 is made of a resist or a polyimide film that can easily form a thick film, if only the lower insulating film 61 is made of an inorganic material, Good. Therefore, unlike the case where the entire thick bank layer bank is made of an inorganic material, it is not necessary to form a film made of an inorganic material over a long time by a PECVD method or the like. Therefore, the productivity of the active matrix display device 1 can be improved. Further, in such a two-stage structure, the organic semiconductor film 41 is in contact with the lower insulating film 61 made of an inorganic material, but is not in contact with the upper insulating film 62. Moreover, since the upper insulating film 62 is formed inside the lower insulating film 61, the organic semiconductor film 43 and the upper insulating film 62 are less likely to be in contact with each other. Therefore, it is possible to reliably prevent the organic semiconductor film 41 from deteriorating due to the influence of the upper insulating film 62 made of an organic material. Absent.

  Other configurations are the same as those of the first embodiment. Here, each pixel 7 is surrounded by a bank layer bank. For this reason, since each organic semiconductor film 43 corresponding to R, G, and B can be formed in a predetermined region using the inkjet method, the full-color active matrix display device 1 can be manufactured with high productivity. An effect similar to that of the first embodiment is obtained.

  In forming the bank layer bank having such a structure, a film made of an inorganic material (an inorganic film for forming the lower insulating film 61) is formed on the surface side of the second interlayer insulating film 52 by a PECV method or the like. After that, it is left along the scanning line gate and the data line sig, and after forming the lower insulating film 61, the resist used for the patterning is removed. A narrow resist or polyimide may be formed as the upper insulating film 62. In this way, even when the lower insulating film 61 is formed by patterning, overetching does not occur because the lower insulating film 61 is thin. Therefore, the pixel electrode 41 is not damaged.

Embodiment 3

  The active matrix display device 1 of the present embodiment has the same structure as that of the second embodiment, except that the material forming the bank layer bank is different from that of the second embodiment. Therefore, common portions are denoted by the same reference numerals, and description thereof is omitted. In addition, as in the second embodiment, description will be made with reference to FIGS. 1, 2, and 4.

  Also in the present embodiment, as shown in FIGS. 1, 2, 4A, 4B and 4C, the data line sig and the scanning line Along the gate, an insulating film thicker than the organic semiconductor film 41 (a bank layer bank / a region in which one or two lower left lines are provided with a pair of oblique lines at a wide pitch) is provided, and an upper layer of the bank layer bank is provided. A counter electrode op is formed on the side.

  Here, the bank layer bank includes a lower insulating film 61 made of an inorganic material such as a silicon nitride film formed thicker than the organic semiconductor film 41, and a silicon oxide film or the like laminated on the lower insulating film 61. And an upper insulating film 62 made of an inorganic material. With such a two-layer structure, since the organic semiconductor film 43 is not in contact with the organic material, the organic semiconductor film 43 does not deteriorate under the influence of the organic material. Therefore, in the thin-film light-emitting element 40, a decrease in luminous efficiency and a decrease in reliability do not occur.

  Here, the upper insulating film 61 is stacked in a region inside the lower insulating film 61 with a width smaller than that of the lower insulating film 61. Therefore, the bank layer bank has a two-stage structure in which the lower insulating film 61 and the upper insulating film 61 having different widths are stacked.

  In forming such a two-stage bank layer bank, inorganic materials (silicon nitride film and silicon oxide film) to form the lower insulating film 61 and the upper insulating film 62 are sequentially formed, and then the upper insulating film 61 is formed. The insulating film 62 is patterned. In this case, since the lower insulating film 61 functions as an etching stopper, the pixel electrode 41 is not damaged even if there is some over-etching. After the completion of the patterning, the lower insulating film 61 is formed by patterning. At this time, since only one layer of the lower insulating film 61 is etched, the etching control is easy, and over-etching that damages the pixel electrode 41 does not occur.

Other configurations are the same as those of the first and second embodiments. Therefore, each pixel 7 is surrounded by the bank layer bank. For this reason, since each organic semiconductor film 43 corresponding to R, G, and B can be formed in a predetermined region using the inkjet method, the full-color active matrix display device 1 can be manufactured with high productivity. An effect similar to that of the first embodiment is obtained.
[Modifications of Embodiments 1, 2, and 3]
In the above embodiment, since the bank layer bank is formed along the data line sig and the scanning line gate, each pixel 7 is partitioned in a matrix by the bank layer bank. Only the bank layer bank may be formed. Also in this case, the organic semiconductor films 43 corresponding to R, G, and B can be formed in a stripe shape in a region partitioned in a stripe shape by the bank layer bank by using an inkjet method. The display device 1 can be manufactured with high productivity.

  In the above embodiment, the corners of the region defined by the bank layer bank are all square. However, if the corners are rounded, the organic semiconductor film 43 can be formed into a flat shape with no rounded corners. it can. In the case of the organic semiconductor film 43 having such a shape, since the driving current does not concentrate on the corner portion, it is possible to prevent a problem such as insufficient breakdown voltage at this portion.

Embodiment 4

  Since the basic structure of the active matrix type display device 1 of the present embodiment is the same as that of the first to third embodiments, the description will be made with reference to FIG. They are shown in the drawings and their description is omitted.

  FIG. 5 is a plan view showing one of the pixels included in the active matrix display device of the present embodiment, and FIGS. 6A, 6B and 6C are AA ′ of FIG. 5, respectively. It is sectional drawing, BB 'sectional drawing, and CC' sectional drawing.

  In this embodiment, as described below, the lower insulating film 61 and the upper insulating film 62 are partially overlapped with each other to exert different functions. That is, also in the present embodiment, as shown in FIG. 1, a plurality of scanning lines gate, a plurality of data lines sig extending in a direction intersecting the extending direction of the scanning lines gate, and a plurality of data lines sig And a plurality of pixels 7 formed in a matrix by the data lines sig and the scanning lines gate.

  In this embodiment, as shown in FIGS. 5 and 6, the lower insulating film 61 (the two regions that are diagonally shaded with two lines descending to the left) is the conduction control circuit 50 in the region where the pixel electrode 41 is formed. Are formed so as to cover the region overlapping the formation region, the data line sig, the common power supply line com, and the scanning line gate. On the other hand, the upper-layer insulating film 62 (region in which the lower left diagonal line is provided at a wide pitch) is formed in a stripe shape only in a portion along the data line sig in the region where the lower-layer insulating film 61 is formed. I have. The organic semiconductor film 43 is formed in a region partitioned by the upper insulating film 62 in a stripe shape.

  Also in this configuration, when the organic semiconductor film 43 is formed by the inkjet method, a portion where the lower insulating film 61 and the upper insulating film 62 overlap with each other is used as a bank layer bank for preventing the overflow of the discharge liquid. Meanwhile, the organic semiconductor film 43 can be formed in a stripe shape. Therefore, in the present embodiment, the portion where the lower insulating film 61 and the upper insulating film 62 overlap has a film thickness of 1 μm or more.

  Also in this configuration, the second interlayer insulating film 52 and the thick bank layer bank (the lower insulating film 61 and the upper insulating film 62) are interposed between the data line sig and the counter electrode op. Therefore, the parasitic capacitance on the data line sig is extremely small. Therefore, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  In addition, although the organic semiconductor film 43 is formed in a stripe shape, a region of the formation region of the pixel electrode 41 overlapping with the formation region of the conduction control circuit 50 and the scanning line gate are covered with the lower insulating film 62. The organic semiconductor film 43 formed only on the flat portion of the pixel electrode 41 in each pixel 7 contributes to light emission. That is, the thin film light emitting element 40 is formed only on the flat portion of the pixel electrode 41. Therefore, the organic semiconductor film 43 is formed to have a constant film thickness, and does not cause display unevenness or drive current concentration. Further, since the lower insulating film 61 prevents the drive current from flowing to the portion that does not contribute to the display, there is an effect that it is possible to prevent the useless current from flowing to the common power supply line com.

  Here, the lower insulating film 61 is composed of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41, and the upper insulating film 62 is an organic material such as a resist or a polyimide film. In this case, only the lower insulating film 61 may be made of an inorganic material. Therefore, unlike the case where the entire thick bank layer bank is made of an inorganic material, it is not necessary to form a film made of an inorganic material over a long time by a PECVD method or the like. Therefore, the productivity of the active matrix display device 1 can be improved. Further, in such a two-layer structure, the organic semiconductor film 41 is in contact with the lower insulating film 61 made of an inorganic material, but not in contact with the upper insulating film 62 made of an organic material. Therefore, the organic semiconductor film 41 does not deteriorate under the influence of the upper insulating film 62 made of an organic material. There is no similar effect as in the first embodiment.

  On the other hand, the lower insulating film 61 is formed of an inorganic material such as a silicon nitride film formed thicker than the organic semiconductor film 41, and the upper insulating film 62 is laminated on the lower insulating film 61. In the case where the organic semiconductor film 43 is made of an inorganic material such as a silicon oxide film, the organic semiconductor film 43 is not in contact with the organic material. Therefore, in the thin-film light-emitting element 40, a decrease in luminous efficiency and a decrease in reliability do not occur. Further, since the upper insulating film 61 is laminated with a small width in the inner region of the lower insulating film 61, when patterning the upper insulating film 62, the lower insulating film 61 functions as an etching stopper. For example, the same effects as in the third embodiment can be obtained.

Embodiment 5

  FIG. 7 is a block diagram schematically showing the entire layout of the active matrix display device. FIG. 8 is a plan view showing one of the pixels formed therein, and FIGS. 9A, 9B, and 9C are cross-sectional views taken along the line AA 'of FIG. 8, and BB', respectively. It is sectional drawing and CC 'sectional drawing. Since the basic configuration of this embodiment is the same as that of the first embodiment, the same reference numerals are given to the common parts, and the description thereof will be omitted.

  In both the present embodiment and the active matrix type display device 1 of the present embodiment, along the data line sig and the scanning line gate, an insulating film thicker than the organic semiconductor film 41 (bank layer bank / one oblique line at the lower left, or 2). In this book, a pair of diagonal lines are provided at a wide pitch), and a counter electrode op is formed on the upper layer side of the bank layer bank. That is, since the second interlayer insulating film 52 and the thick bank layer bank intervene between the data line sig and the counter electrode op, the capacitance parasitic on the data line sig is extremely small. Therefore, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Here, the bank layer bank is composed of a lower insulating film 61 made of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41 and a resist laminated on the lower insulating film 61. Alternatively, it is composed of an upper insulating film 62 made of an organic material such as a polyimide film. For example, the thicknesses of the organic semiconductor film 41, the lower insulating film 61, and the upper insulating film 62 are 0.05 μm to 0.2 μm, 0.2 μm to 1.0 μm, and 1 μm to 2 μm, respectively. Therefore, the organic semiconductor film 41 is in contact with the lower insulating film 61 made of an inorganic material, but is not in contact with the upper insulating film 62 made of an organic material. Therefore, the organic semiconductor film 41 does not deteriorate under the influence of the upper insulating film 62 made of an organic material. There is no similar effect as in the first embodiment.

  In the active matrix display device 1 configured as described above, the organic semiconductor film 41 is surrounded by the bank layer bank. Therefore, in this state, the counter electrode op of each pixel 7 is connected to the counter electrode op of the adjacent pixel 7 over the bank layer bank. However, in the present embodiment, the bank layer bank is provided with a cut-off portion where both the lower insulating film 61 and the upper insulating film 62 are interrupted at a portion corresponding to a portion between the pixels 7 adjacent in the extending direction of the data line sig. (A first interruption portion) is formed. In the bank layer bank, a portion corresponding to a portion between the pixels 7 adjacent to each other in the direction in which the scanning line gate extends is also a part where both the lower insulating film 61 and the upper insulating film 62 are interrupted (off (first Is formed. Further, in the bank layer bank, at the ends of the data lines sig and the scanning lines gate in the extending directions, both the lower-layer insulating film 61 and the upper-layer insulating film 62 are interrupted at the portions off (first interrupts). Part) is formed.

  Since there is no thick bank layer bank in such a discontinuous portion off, it is a flat portion without a large step caused by the bank layer bank, and the opposing electrode op formed in this portion does not break. Therefore, the opposing electrodes 7 of each pixel 7 are surely connected via a flat portion without a step caused by the bank layer bank. Therefore, even if a thick insulating film (bank layer bank) is formed around the pixel 7 to suppress parasitic capacitance and the like, disconnection does not occur in the counter electrode op formed on the thick insulating film (bank layer bank). .

  Further, in the peripheral area of the transparent substrate 10 (the area outside the display section 11), both the data-side drive circuit 3 and the scan-side drive circuit 4 are covered by a bank layer bank (the formation area is hatched). Has been done. For this reason, even when the counter electrode op overlaps the formation region of these drive circuits, the bank layer bank is interposed between the wiring layer of the drive circuit and the counter electrode op. Therefore, since parasitic capacitance can be prevented from being generated in the driving circuits 3 and 4, the load on the driving circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Moreover, the bank layer bank formed on the upper layer side of the scanning side driving circuit 4 and the data side driving circuit 3 is located at a position corresponding to between the formation area of the scanning side driving circuit 4 and the formation area of the data side driving circuit 3. A discontinuous portion off (second discontinuous portion) is formed in which both the lower insulating film 61 and the upper insulating film 62 are interrupted. For this reason, the counter electrode op on the display unit 11 side and the counter electrode op on the outer peripheral side of the substrate are connected via a discontinuous portion off of the bank layer bank, and the discontinuous portion off also has no step due to the bank layer bank. It is a flat part. Therefore, since the opposing electrode op formed at the discontinuous portion off does not break, the opposing electrode op on the display unit 11 side and the opposing electrode op on the outer peripheral side of the substrate are separated from the opposing electrode off on the bank layer bank. The terminal 12 connected to the counter electrode op on the outer peripheral side of the substrate by wire is securely connected to the counter electrode op of the display unit 11.

  Furthermore, in the present embodiment, since the bank layer bank is also formed in the region where the pixel electrode 41 is formed and overlaps with the relay electrode 35 of the conduction control circuit 50, it is possible to prevent a useless reactive current from flowing. Therefore, the width of the common feed line com may be narrower accordingly.

  When manufacturing the active matrix display device 1 having such a configuration, similarly to the first embodiment, the bank layer bank is formed on the surface side of the second interlayer insulating film 52 along the scanning lines gate and the data lines sig. To form At this time, a discontinuous portion off is formed in a predetermined portion of the bank layer bank. The bank layer bank formed along the data line sig is wide so as to cover the common power supply line com. As a result, the region of the thin-film light emitting device 40 where the organic semiconductor film 43 is to be formed is surrounded by the bank layer bank.

  Next, each organic semiconductor film 43 corresponding to R, G, and B is formed in a region partitioned in a matrix by the bank layer bank using an inkjet method. To this end, a liquid material (precursor) for forming the organic semiconductor film 43 is discharged from the ink jet head to the inner region of the bank layer bank, and is fixed in the inner region of the bank layer bank. A film 43 is formed. Here, since the upper insulating film 62 of the bank layer bank is made of a resist or a polyimide film, it is water repellent. On the other hand, since the precursor of the organic semiconductor film 43 uses a hydrophilic solvent, the application area of the organic semiconductor film 43 is definitely defined by the bank layer bank, and does not protrude into the adjacent pixels 7. In addition, even if there is a discontinuous portion off in the bank layer bank that divides the formation region of the organic semiconductor film 43, since the discontinuous portion off is narrow, the application region of the organic semiconductor film 43 is definitely defined by the bank layer bank. There is no protrusion to the adjacent pixels 7. Therefore, the organic semiconductor film 43 and the like can be formed only in the predetermined region.

  Note that the precursor discharged from the inkjet head swells to a thickness of about 2 μm to about 4 μm due to the influence of surface tension, so that the bank layer bank needs to have a thickness of about 1 μm to about 3 μm. In this state, the precursor discharged from the inkjet head is in contact with the upper insulating film 62. However, after the heat treatment at 100 ° C. to 150 ° C., the solvent component is removed from the precursor, so that the bank layer The thickness of the organic semiconductor film 43 after being fixed inside the bank is about 0.05 μm to about 0.2 μm. Therefore, in this state, the organic semiconductor film 43 is not in contact with the upper insulating film 62.

  Note that, if the partition wall composed of the bank layer bank has a height of 1 μm or more in advance, the bank layer bank sufficiently functions as a partition even if the bank layer bank is not water-repellent. Therefore, if such a thick bank layer bank is formed, the formation region can be defined even when the organic half film 43 is formed by a coating method instead of the ink jet method.

Modification 1 of Embodiment 5

  FIG. 10 is a block diagram schematically showing the entire layout of the active matrix display device. FIG. 11 is a plan view showing one of the pixels formed therein, and FIGS. 12A, 12B, and 12C are cross-sectional views taken along the lines AA 'and BB' of FIG. 11, respectively. It is a figure and CC 'sectional drawing. Since the basic configuration of the present embodiment is the same as that of the first embodiment, the same reference numerals are given to the same parts in the respective drawings, and detailed description thereof will be omitted.

  As shown in FIGS. 10, 11, and 12 (A), (B), and (C), even in the active matrix display device 1 of the present embodiment, the organic semiconductor film is formed along the data lines sig and the scanning lines gate. An insulating film thicker than 41 (bank layer bank / a region where one diagonal line diagonally to the left or two diagonal lines are provided at a wide pitch) is provided, and a counter electrode op is formed on the upper layer side of the bank layer bank. It is formed. That is, since the second interlayer insulating film 52 and the thick bank layer bank intervene between the data line sig and the counter electrode op, the capacitance parasitic on the data line sig is extremely small. Therefore, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Here, the bank layer bank is composed of a lower insulating film 61 made of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41 and a resist laminated on the lower insulating film 61. Alternatively, it is composed of an upper insulating film 62 made of an organic material such as a polyimide film. Therefore, the organic semiconductor film 41 is in contact with the lower insulating film 61 made of an inorganic material, but is not in contact with the upper insulating film 62 made of an organic material. Therefore, the organic semiconductor film 41 does not deteriorate under the influence of the upper insulating film 62 made of an organic material. There is no similar effect as in the first embodiment.

  Further, in this embodiment, since the bank layer bank is formed along the data line sig and the scanning line gate, each pixel 7 is surrounded by the bank layer bank. For this reason, since each organic semiconductor film 43 corresponding to R, G, and B can be formed in a predetermined region using the inkjet method, the full-color active matrix display device 1 can be manufactured with high productivity.

  In addition, in the bank layer bank, a break portion off (first break portion) is formed in a portion corresponding to a portion between the pixels 7 adjacent in the extending direction of the scanning line gate. Further, in the bank layer bank, a break portion off (first break portion) is also formed at each end of the data line sig and the scanning line gate in the extending direction. Further, the bank layer bank formed on the upper layer side of the scanning side driving circuit 4 and the data side driving circuit 3 is located at a position corresponding to the area between the forming area of the scanning side driving circuit 4 and the forming area of the data side driving circuit 3. A discontinuous portion off (a second discontinuous portion) is formed. Therefore, the opposing electrode op is reliably connected via a flat portion (a break portion off) having no step due to the bank layer bank, and is not disconnected.

Modification 2 of Embodiment 5

  FIG. 13 is a block diagram schematically showing the overall layout of the active matrix display device. FIG. 14 is a plan view showing one of the pixels formed therein, and FIGS. 15A, 15B, and 15C are cross-sectional views taken along the lines AA 'and BB' of FIG. It is a figure and CC 'sectional drawing. Since the basic configuration of the present embodiment is the same as that of the first embodiment, the same reference numerals are given to the same parts in the respective drawings, and detailed description thereof will be omitted.

  As shown in FIGS. 13, 14, and 15 (A), (B), and (C), even in the active matrix display device 1 of the present embodiment, the organic semiconductor film is formed along the data lines sig and the scanning lines gate. An insulating film thicker than 41 (bank layer bank / a region where one diagonal line diagonally to the left or two diagonal lines are provided at a wide pitch) is provided, and a counter electrode op is formed on the upper layer side of the bank layer bank. It is formed. That is, since the second interlayer insulating film 52 and the thick bank layer bank intervene between the data line sig and the counter electrode op, the capacitance parasitic on the data line sig is extremely small. Therefore, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Here, the bank layer bank is composed of a lower insulating film 61 made of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41 and a resist laminated on the lower insulating film 61. Alternatively, it is composed of an upper insulating film 62 made of an organic material such as a polyimide film. Therefore, the organic semiconductor film 41 is in contact with the lower insulating film 61 made of an inorganic material, but is not in contact with the upper insulating film 62 made of an organic material. Therefore, the organic semiconductor film 41 does not deteriorate under the influence of the upper insulating film 62 made of an organic material. There is no similar effect as in the first embodiment.

  Further, in this embodiment, since the bank layer bank is formed along the data line sig and the scanning line gate, each pixel 7 is surrounded by the bank layer bank. For this reason, since each organic semiconductor film 43 corresponding to R, G, and B can be formed in a predetermined region using the inkjet method, the full-color active matrix display device 1 can be manufactured with high productivity.

  In addition, in the bank layer bank, a break portion off (first break portion) is formed in a portion corresponding to a portion between the pixels 7 adjacent in the extending direction of the data line sig. Further, in the bank layer bank, a break portion off (first break portion) is also formed at each end of the data line sig and the scanning line gate in the extending direction. Further, the bank layer bank formed on the upper layer side of the scanning side driving circuit 4 and the data side driving circuit 3 is located at a position corresponding to the area between the forming area of the scanning side driving circuit 4 and the forming area of the data side driving circuit 3. A discontinuous portion off (a second discontinuous portion) is formed. Therefore, the opposing electrode op is reliably connected via a flat portion (a break portion off) having no step due to the bank layer bank, and is not disconnected.

Modification 3 of Embodiment 5

  FIG. 16 is a block diagram schematically showing the overall layout of the active matrix display device. FIG. 17 is a plan view showing one of the pixels formed therein, and FIGS. 18 (A), (B) and (C) are AA 'sectional view and BB' sectional view of FIG. 17, respectively. It is a figure and CC 'sectional drawing. Since the present embodiment and the first and fifth embodiments have the same basic configuration, the same reference numerals are given to the same portions in the respective drawings, and detailed description thereof will be omitted.

  As shown in FIGS. 16, 17, and 18 (A), (B), and (C), even in the active matrix display device 1 of the present embodiment, the organic semiconductor film is formed along the data lines sig and the scanning lines gate. An insulating film thicker than 41 (bank layer bank / a region where one diagonal line diagonally to the left or two diagonal lines are provided at a wide pitch) is provided, and a counter electrode op is formed on the upper layer side of the bank layer bank. It is formed. That is, since the second interlayer insulating film 52 and the thick bank layer bank intervene between the data line sig and the counter electrode op, the capacitance parasitic on the data line sig is extremely small. Therefore, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Here, the bank layer bank is composed of a lower insulating film 61 made of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41 and a resist laminated on the lower insulating film 61. Alternatively, it is composed of an upper insulating film 62 made of an organic material such as a polyimide film.

  Further, in this embodiment, since the bank layer bank is formed along the data line sig and the scanning line gate, each pixel 7 is surrounded by the bank layer bank. For this reason, since each organic semiconductor film 43 corresponding to R, G, and B can be formed in a predetermined region using the inkjet method, the full-color active matrix display device 1 can be manufactured with high productivity.

  In addition, in the bank layer bank, a break portion off (first break portion) is formed in a portion corresponding to a portion between the pixels 7 adjacent in the extending direction of the data line sig. Further, in the bank layer bank, a break portion off (first break portion) is also formed at each end of the data line sig and the scanning line gate in the extending direction. Further, the bank layer bank formed on the upper layer side of the scanning side driving circuit 4 and the data side driving circuit 3 is located at a position corresponding to the area between the forming area of the scanning side driving circuit 4 and the forming area of the data side driving circuit 3. A discontinuous portion off (a second discontinuous portion) is formed.

  However, in the present embodiment, in the discontinuous portion off, the lower insulating film 61 (a pair of two shaded regions) and the upper insulating film 62 (the lower left insulating film 62) used to form the bank layer bank. Only the upper insulating film 62 is interrupted in the hatched area), and the lower insulating film 61 is formed even in the interrupted portion off.

  Even in the case of such a configuration, since only the thin lower-layer insulating film 61 is provided at the discontinuous portion off, and the thick upper-layer insulating film 62 is not provided, the counter electrode op is reliably connected via the discontinuous portion off. There is no disconnection.

  Note that, in the above embodiment, the lower insulating film 61 is formed in both the first interrupted portion and the second interrupted portion. However, the present invention is not limited to this. The lower insulating film 61 may be formed in only one of the interrupted portion and the second interrupted portion. Further, the configuration in which the lower insulating film 61 is formed at a break portion as in this embodiment may be applied to the bank layer bank of the pattern described in the other embodiments.

Embodiment 6

  FIG. 19 is a block diagram schematically showing the overall layout of the active matrix display device. FIG. 20 is a plan view showing one of the pixels formed therein, and FIGS. 21A, 21B, and 21C are cross-sectional views taken along the lines AA 'and BB' of FIG. 20, respectively. It is a figure and CC 'sectional drawing. Since the basic configuration of the present embodiment is the same as that of the first embodiment, the same reference numerals are given to the same parts in the respective drawings, and detailed description thereof will be omitted.

  As shown in FIG. 19, FIG. 20, and FIGS. 21A, 21B, and 21C, in the active matrix display device 1 of the present embodiment, the thickness is larger than the organic semiconductor film 41 along the data line sig. An insulating film (bank layer bank / a region where one diagonal line at the lower left or a pair of diagonal lines is provided at a wide pitch) is provided, and a counter electrode op is formed on the upper layer side of the bank layer bank. . That is, since the second interlayer insulating film 52 and the thick bank layer bank intervene between the data line sig and the counter electrode op, the capacitance parasitic on the data line sig is extremely small. Therefore, the load on the drive circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Here, the bank layer bank is composed of a lower insulating film 61 made of an inorganic material such as a silicon oxide film or a silicon nitride film formed thicker than the organic semiconductor film 41 and a resist laminated on the lower insulating film 61. Alternatively, it is composed of an upper insulating film 62 made of an organic material such as a polyimide film. Therefore, the organic semiconductor film 41 is in contact with the lower insulating film 61 made of an inorganic material, but is not in contact with the upper insulating film 62 made of an organic material. Therefore, the organic semiconductor film 41 does not deteriorate under the influence of the upper insulating film 62 made of an organic material. There is no similar effect as in the first embodiment.

  Further, in the present embodiment, since the bank layer bank is formed along the data line sig, each of the areas corresponding to R, G, and B is formed in a region partitioned in a stripe shape by the bank layer bank using the inkjet method. Since the organic semiconductor film 43 can be formed in a stripe shape, the full-color active matrix display device 1 can be manufactured with high productivity.

  Moreover, in the bank layer bank, at the end of the data line sig in the extending direction, a discontinuous portion off (first discontinuous portion) in which both the lower insulating film 61 and the upper insulating film 62 are interrupted is formed. I have. Therefore, the opposing electrode op of each pixel 7 is connected to the opposing electrode op of the adjacent pixel 7 over the thick bank layer bank in the extending direction of the scanning line gate. Nevertheless, when the extending direction of the data line sig is traced, the opposing electrode op of each pixel 7 passes through an end portion of the data line sig via a discontinuous portion off (a flat portion without a step caused by the bank layer bank). , Are connected to columns of pixels 7 adjacent in the direction in which the scanning line gate extends. Therefore, it can be said that the opposing electrode op of each pixel 7 is connected to the opposing electrode op of another pixel 7 via a flat portion without a step caused by the bank layer bank. No disconnection occurs.

  Further, in the peripheral area of the transparent substrate 10 (the area outside the display section 11), the data-side driving circuit 3 and the scanning-side driving circuit 4 are both covered by a bank layer bank. For this reason, even when the counter electrode op overlaps the formation region of these drive circuits, the bank layer bank is interposed between the wiring layer of the drive circuit and the counter electrode op. Therefore, since parasitic capacitance can be prevented from being generated in the driving circuits 3 and 4, the load on the driving circuits 3 and 4 can be reduced, and low power consumption or high-speed display operation can be achieved.

  Further, the bank layer bank formed on the upper layer side of the scanning side driving circuit 4 and the data side driving circuit 3 is located at a position corresponding to the area between the forming area of the scanning side driving circuit 4 and the forming area of the data side driving circuit 3. A discontinuous portion off (a second discontinuous portion) is formed. Therefore, the opposing electrode op is reliably connected via a flat portion (a break portion off) having no step due to the bank layer bank, and is not disconnected.

Other embodiments

  As described in the third modification of the fifth embodiment, the configuration in which only the upper insulating film 62 is interrupted at the interrupted portion off of the bank layer bank may be applied to the sixth embodiment.

  Further, as described in the fifth and sixth embodiments, the invention of preventing disconnection of the opposing electrode op by forming a discontinuous portion off in the bank layer bank is made of the inorganic material described in the third embodiment. The present invention can be applied to a case where a bank layer bank is used.

  As described above, in the active matrix type display device according to the present invention, the insulating film is formed so as to surround the formation region of the organic semiconductor film. It is composed of a side insulating film and an upper layer insulating film made of an organic material laminated thereon. Therefore, according to the present invention, since a thick insulating film is interposed between the data line and the counter electrode, it is possible to prevent the capacitance from being parasitic on the data line. For this reason, the load on the data-side driving circuit can be reduced, so that low power consumption or high-speed display operation can be achieved. Further, in the present invention, only the lower insulating film in contact with the organic semiconductor film of the thin-film light-emitting element is formed of an inorganic material, and the upper layer is formed of an organic material such as a resist capable of easily forming a thick film. High productivity because the insulating films are stacked. In addition, the upper insulating film is not in contact with the organic semiconductor film, and is in contact with the organic semiconductor film because the lower insulating film is made of an inorganic material. There is no. Therefore, the thin-film light-emitting element does not cause a decrease in luminous efficiency or reliability.

  Here, when the upper insulating film is laminated on the inner region of the lower insulating film with a width smaller than that of the lower insulating film, the upper insulating film made of an organic material is less likely to be in contact with the organic semiconductor film. Therefore, deterioration of the organic semiconductor film can be more reliably prevented.

  In another embodiment of the present invention, in order to form an insulating film so as to surround a region where an organic semiconductor film is formed, a lower insulating film made of an inorganic material and a lower insulating film having a width smaller than the lower insulating film And an upper-layer insulating film made of an inorganic material laminated in the inner region of. Therefore, also in the present invention, since the thick insulating film is interposed between the data line and the counter electrode, it is possible to prevent the capacitance from being parasitic on the data line. For this reason, the load on the data-side driving circuit can be reduced, so that low power consumption or high-speed display operation can be achieved. Also, when forming a film made of an inorganic material to form the lower insulating film and the upper insulating film, when patterning the upper insulating film, the lower insulating film functions as an etching stopper, so that the The pixel electrode is not damaged by over-etching. When the lower insulating film is formed by patterning after the completion of the patterning, only one layer of the lower insulating film is etched, so that the etching control is easy, and over-etching that may damage the pixel electrode does not occur. .

FIG. 1 is a block diagram schematically showing an overall layout of an active matrix display device according to Embodiment 1 of the present invention. FIG. 2 is a plan view showing one of the pixels included in the active matrix display device shown in FIG. 3A, 3B, and 3C are an AA 'sectional view, a BB' sectional view, and a CC 'sectional view of FIG. 2, respectively. FIGS. 4A, 4B, and 4C respectively show the AA 'line, BB' line, and C of FIG. 2 of the active matrix display device according to the second and third embodiments of the present invention. It is sectional drawing in the position corresponding to the -C 'line. FIG. 5 is a plan view showing one of the pixels included in the active matrix display device according to Embodiment 4 of the present invention. FIGS. 6A, 6B, and 6C are cross-sectional views at positions corresponding to lines AA ', BB', and CC 'in FIG. 5, respectively. FIG. 7 is a block diagram schematically showing an overall layout of an active matrix display device according to Embodiment 5 of the present invention. FIG. 8 is a plan view showing one of the pixels included in the active matrix display device shown in FIG. 9A, 9B, and 9C are cross-sectional views at positions corresponding to lines AA ', BB', and CC 'in FIG. 8, respectively. FIG. 10 is a block diagram schematically showing an overall layout of an active matrix display device according to a first modification of the fifth embodiment of the present invention. FIG. 11 is a plan view showing one of the pixels included in the active matrix display device shown in FIG. 12A, 12B, and 12C are cross-sectional views at positions corresponding to lines AA ', BB', and CC 'in FIG. 11, respectively. FIG. 13 is a block diagram schematically showing an overall layout of an active matrix display device according to Modification 2 of Embodiment 5 of the present invention. FIG. 14 is a plan view showing one of the pixels included in the active matrix display device shown in FIG. FIGS. 15A, 15B, and 15C are cross-sectional views at positions corresponding to lines AA ', BB', and CC 'in FIG. 14, respectively. FIG. 16 is a block diagram schematically showing an overall layout of an active matrix display device according to Modification 3 of Embodiment 5 of the present invention. FIG. 17 is a plan view showing one of the pixels included in the active matrix display device shown in FIG. FIGS. 18A, 18B, and 18C are cross-sectional views at positions corresponding to lines AA ', BB', and CC 'in FIG. 17, respectively. FIG. 19 is a block diagram schematically showing the entire layout of the active matrix display device according to Embodiment 6 of the present invention. FIG. 20 is a plan view of one of the pixels included in the active matrix display device shown in FIG. 21A, 21B, and 21C are cross-sectional views at positions corresponding to the line AA ', the line BB', and the line CC 'in FIG. 20, respectively. FIG. 22 is a block diagram schematically illustrating an overall layout of an active matrix display device according to a conventional example and a comparative example of the present invention. FIG. 23 is a plan view showing one of the pixels included in the active matrix display device shown in FIG. FIGS. 24A, 24B and 24C are cross-sectional views at positions corresponding to lines AA ', BB' and CC 'in FIG. 23, respectively. FIGS. 25A, 25B, and 25C respectively correspond to the AA 'line, the BB' line, and the CC 'line of FIG. 23 in the active matrix display device according to the comparative example. It is sectional drawing in a position.

Explanation of reference numerals

DESCRIPTION OF SYMBOLS 1 Active matrix type display apparatus 2 Display part 3 Data side drive circuit 4 Scan side drive circuit 7 Pixel 10 Transparent substrate 12 Terminal 20 First TFT
21 Gate electrode of first TFT 30 Second TFT
31 Gate electrode 40 of second TFT 40 Light emitting element 41 Pixel electrode 43 Organic semiconductor 61 Lower insulating film 62 Upper insulating film bank Bank layer (insulating film)
cap storage capacitor com common power supply line gate scanning line op counter electrode off punctured layer sig data line

Claims (7)

In an active matrix substrate having a plurality of pixel electrodes,
An insulating film is provided around each of the plurality of pixel electrodes,
The insulating film includes a first insulating film made of an inorganic material, and a second insulating film formed on the first insulating film and made of an organic material or an inorganic material,
An active matrix substrate, wherein the insulating film and a part of the pixel electrode overlap with each other.   The display device including the active matrix substrate according to claim 1, further comprising: each of the plurality of pixel electrodes, a counter electrode facing the plurality of pixel electrodes, and an organic semiconductor film disposed therebetween. A display device comprising a thin-film light emitting element, wherein the organic semiconductor film is partitioned by the insulating film. A plurality of scanning lines, a plurality of data lines, and a plurality of pixels formed in a matrix by the plurality of scanning lines and the plurality of data lines, each of the plurality of pixels, A conduction control circuit including a transistor having a gate electrode connected to a corresponding scan line among a plurality of scan lines; a pixel electrode; a counter electrode facing the pixel electrode; and a conductive control circuit provided between the pixel electrode and the counter electrode. And a thin-film light-emitting element including an organic semiconductor film,
The organic semiconductor film is partitioned by an insulating film provided between the data line and the counter electrode,
The insulating film includes the first insulating film made of an inorganic material, and a second insulating film formed on the first insulating film and made of an organic material or an inorganic material. A display device, wherein a part of the pixel electrode overlaps.   4. The display device according to claim 3, wherein a region of the pixel electrode overlapping a region where the conduction control circuit is formed is covered with the insulating film. 5.   5. The display device according to claim 3, wherein the region partitioned by the insulating film has a rounded corner.   6. The display device according to claim 3, wherein the first insulating film is formed so as to cover the plurality of data lines and the plurality of scanning lines. 7. The display device according to claim 3, wherein the organic semiconductor film emits light when a drive current flows between the plurality of pixel electrodes and the counter electrode.

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